TWI828899B - 射束輪廓的判定方法及離子束照射裝置 - Google Patents

射束輪廓的判定方法及離子束照射裝置 Download PDF

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Publication number
TWI828899B
TWI828899B TW109112191A TW109112191A TWI828899B TW I828899 B TWI828899 B TW I828899B TW 109112191 A TW109112191 A TW 109112191A TW 109112191 A TW109112191 A TW 109112191A TW I828899 B TWI828899 B TW I828899B
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TW
Taiwan
Prior art keywords
substrate
ion beam
uniformity
ion
beam profile
Prior art date
Application number
TW109112191A
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English (en)
Chinese (zh)
Other versions
TW202109601A (zh
Inventor
井内裕
Original Assignee
日商日新離子機器股份有限公司
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Publication of TW202109601A publication Critical patent/TW202109601A/zh
Application granted granted Critical
Publication of TWI828899B publication Critical patent/TWI828899B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
TW109112191A 2019-08-02 2020-04-10 射束輪廓的判定方法及離子束照射裝置 TWI828899B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-143149 2019-08-02
JP2019143149A JP7037126B2 (ja) 2019-08-02 2019-08-02 ビームプロファイルの判定方法およびイオンビーム照射装置

Publications (2)

Publication Number Publication Date
TW202109601A TW202109601A (zh) 2021-03-01
TWI828899B true TWI828899B (zh) 2024-01-11

Family

ID=74259786

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109112191A TWI828899B (zh) 2019-08-02 2020-04-10 射束輪廓的判定方法及離子束照射裝置

Country Status (3)

Country Link
US (1) US11145486B2 (https=)
JP (1) JP7037126B2 (https=)
TW (1) TWI828899B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12406833B2 (en) * 2023-06-12 2025-09-02 Applied Materials, Inc. Ion extraction optics having non uniform grid assembly
CN121531942B (zh) * 2026-01-16 2026-04-17 成都中核高通同位素股份有限公司 一种改善晶圆性能的辐照系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007172927A (ja) * 2005-12-20 2007-07-05 Nissin Ion Equipment Co Ltd イオンビーム照射装置およびビーム均一性調整方法
TW200828390A (en) * 2006-10-31 2008-07-01 Nissin Ion Equipment Co Ltd Ion implanter
US7683347B2 (en) * 2006-09-29 2010-03-23 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implantation throughput and dose uniformity
US20130299722A1 (en) * 2010-11-19 2013-11-14 Advanced Ion Beam Technology, Inc. Ion implantation method and ion implanter

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7547460B2 (en) * 2000-09-15 2009-06-16 Varian Semiconductor Equipment Associates, Inc. Ion implanter optimizer scan waveform retention and recovery
US7176470B1 (en) * 2005-12-22 2007-02-13 Varian Semiconductor Equipment Associates, Inc. Technique for high-efficiency ion implantation
US7525103B2 (en) 2006-01-20 2009-04-28 Varian Semiconductor Equipment Associates, Inc. Technique for improving uniformity of a ribbon beam
US7772571B2 (en) * 2007-10-08 2010-08-10 Advanced Ion Beam Technology, Inc. Implant beam utilization in an ion implanter
JP2011165421A (ja) * 2010-02-08 2011-08-25 Nissin Ion Equipment Co Ltd イオンビーム照射方法およびイオンビーム照射装置
US8421039B2 (en) * 2011-03-31 2013-04-16 Axcelis Technologies, Inc. Method and apparatus for improved uniformity control with dynamic beam shaping
JP6207418B2 (ja) * 2014-02-10 2017-10-04 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置、ビーム平行化器、及びビーム平行化方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007172927A (ja) * 2005-12-20 2007-07-05 Nissin Ion Equipment Co Ltd イオンビーム照射装置およびビーム均一性調整方法
US7683347B2 (en) * 2006-09-29 2010-03-23 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implantation throughput and dose uniformity
TW200828390A (en) * 2006-10-31 2008-07-01 Nissin Ion Equipment Co Ltd Ion implanter
US20130299722A1 (en) * 2010-11-19 2013-11-14 Advanced Ion Beam Technology, Inc. Ion implantation method and ion implanter

Also Published As

Publication number Publication date
US20210035774A1 (en) 2021-02-04
JP7037126B2 (ja) 2022-03-16
US11145486B2 (en) 2021-10-12
JP2021026870A (ja) 2021-02-22
TW202109601A (zh) 2021-03-01

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