TWI827298B - Epitaxial equipment cooling system and method - Google Patents
Epitaxial equipment cooling system and method Download PDFInfo
- Publication number
- TWI827298B TWI827298B TW111137955A TW111137955A TWI827298B TW I827298 B TWI827298 B TW I827298B TW 111137955 A TW111137955 A TW 111137955A TW 111137955 A TW111137955 A TW 111137955A TW I827298 B TWI827298 B TW I827298B
- Authority
- TW
- Taiwan
- Prior art keywords
- temperature
- epitaxial
- epitaxial wafer
- heating
- preset threshold
- Prior art date
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000010438 heat treatment Methods 0.000 claims abstract description 96
- 230000008569 process Effects 0.000 claims description 31
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 22
- 229910002804 graphite Inorganic materials 0.000 claims description 21
- 239000010439 graphite Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000001514 detection method Methods 0.000 claims description 7
- 238000004441 surface measurement Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 230000009467 reduction Effects 0.000 claims description 2
- 230000001960 triggered effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 88
- 230000007547 defect Effects 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 10
- 230000035882 stress Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
本發明實施例公開了一種外延設備冷卻系統和方法，該系統包括：加熱模組，該加熱模組經配置為能夠以不同的加熱功率向外延片進行熱輻射；控制模組，用於當該外延片的上表面測量溫度和下表面測量溫度之間的溫度差大於預設閾值時，向該加熱模組發送控制信號以控制該加熱模組的功率使得該溫度差小於該預設閾值。通過控制模組和加熱模組保障外延片的上表面測量溫度與下表面測量溫度的溫度差在合理範圍內，有效減小了外延片的邊緣應力，獲得符合品質要求的外延片。Embodiments of the present invention disclose an epitaxial equipment cooling system and method. The system includes: a heating module configured to radiate heat to the epitaxial wafer with different heating powers; a control module used to When the temperature difference between the measured temperature of the upper surface and the lower surface of the epitaxial wafer is greater than the preset threshold, a control signal is sent to the heating module to control the power of the heating module so that the temperature difference is less than the preset threshold. The control module and heating module ensure that the temperature difference between the measured temperature on the upper surface of the epitaxial wafer and the measured temperature on the lower surface of the epitaxial wafer is within a reasonable range, effectively reducing the edge stress of the epitaxial wafer and obtaining an epitaxial wafer that meets quality requirements.
Description
本發明實施例屬於半導體製造領域，尤其關於一種外延設備冷卻系統和方法。Embodiments of the present invention belong to the field of semiconductor manufacturing, and in particular relate to an epitaxial equipment cooling system and method.
在半導體領域，矽片一般是積體電路的原料。其中，外延片因其表面缺陷少和電阻率可控等特性，被廣泛用於高集成化的積體電路（Integrated Circuit，IC）元件和金氧半場效電晶體（（Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET），MOS）製程。電路與電子元件需要在外延片上製作完成，不同的應用如MOS型中n型基板、p溝道，靠空穴的流動運送電流的MOS管（Positive channel Metal Oxide Semiconductor，PMOS）、N型金屬-氧化物-半導體（N-Metal-Oxide-Semiconductor，NMOS）、互補金屬氧化物半導體（Complementary Metal Oxide Semiconductor，CMOS）和雙極型中飽和型和非飽和型。隨著積體電路設計朝向輕、薄、短、小及省電化的發展趨勢，行動通訊、資訊家電等產品無不力求節約能源消耗，對於外延片類產品的要求也不斷提高。In the semiconductor field, silicon wafers are generally the raw material for integrated circuits. Among them, epitaxial wafers are widely used in highly integrated integrated circuit (IC) components and metal-oxide-semiconductor field transistors (Metal-Oxide-Semiconductor Field) due to their characteristics of few surface defects and controllable resistivity. -Effect Transistor, MOSFET), MOS) process. Circuits and electronic components need to be made on epitaxial wafers. Different applications include MOS-type n-type substrates, p-channels, MOS tubes (Positive channel Metal Oxide Semiconductor, PMOS) that rely on the flow of holes to carry current, N-type metal- Oxide-semiconductor (N-Metal-Oxide-Semiconductor, NMOS), complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) and bipolar saturated and unsaturated types. With the development trend of integrated circuit design towards being light, thin, short, small and power-saving, products such as mobile communications and information appliances all strive to save energy consumption, and the requirements for epitaxial wafer products are also constantly increasing.
在外延生長過程中，外延層上會出現許多缺陷，有位錯、堆垛層錯、沉積物異物和氧化引起的缺陷等。從廣義上講，缺陷也包括氧、碳、重金屬等雜質以及原子空位和填隙原子等點缺陷。這些缺陷的存在有的會直接影響半導體的性能。外延層中的各種缺陷不但與基板品質、基板表面情況有關，而且與外延生長過程本身也有著密切關係，例如，在外延生長過程結束後的冷卻過程中，要避免急劇冷卻，否則會由於大的溫度梯度在外延層中產生滑移位錯。During the epitaxial growth process, many defects will appear on the epitaxial layer, including dislocations, stacking faults, deposited foreign matter and defects caused by oxidation. Broadly speaking, defects also include impurities such as oxygen, carbon, heavy metals, and point defects such as atomic vacancies and interstitial atoms. The existence of some of these defects will directly affect the performance of semiconductors. Various defects in the epitaxial layer are not only related to the quality of the substrate and the surface condition of the substrate, but are also closely related to the epitaxial growth process itself. For example, during the cooling process after the epitaxial growth process, rapid cooling should be avoided, otherwise it will occur due to large The temperature gradient generates slip dislocations in the epitaxial layer.
有鑑於此，本發明實施例期望提供用於外延設備冷卻系統裝置和方法；能夠在外延片的冷卻過程中，動態調節加熱模組的加熱功率，以保證外延片的上表面溫度與下表面溫度的溫度差在合理範圍內，避免滑移缺陷的產生。In view of this, embodiments of the present invention are expected to provide a cooling system device and method for epitaxial equipment; the heating power of the heating module can be dynamically adjusted during the cooling process of the epitaxial wafer to ensure the upper surface temperature and lower surface temperature of the epitaxial wafer. The temperature difference is within a reasonable range to avoid the occurrence of slip defects.
本發明實施例的技術方案是這樣實現的： 第一方面，本發明實施例提供了一種外延設備冷卻系統，該系統包括： 加熱模組，該加熱模組經配置為能夠以不同的加熱功率向外延片進行熱輻射；控制模組，用於當該外延片的上表面測量溫度和下表面測量溫度之間的溫度差大於預設閾值時，向該加熱模組發送控制信號以控制該加熱模組的功率使得該溫度差小於該預設閾值。 The technical solution of the embodiment of the present invention is implemented as follows: In a first aspect, an embodiment of the present invention provides an epitaxial equipment cooling system, which system includes: The heating module is configured to radiate heat to the epitaxial wafer with different heating powers; the control module is used when the temperature difference between the measured temperature of the upper surface and the measured temperature of the lower surface of the epitaxial wafer is greater than When the threshold is preset, a control signal is sent to the heating module to control the power of the heating module so that the temperature difference is less than the preset threshold.
第二方面，本發明實施例提供了一種外延設備冷卻方法，該冷卻方法包括： 在外延片完成外延沉積後，根據該外延片的上表面測量溫度和下表面測量溫度設定加熱功率以降低該外延片的溫度；當該上表面測量溫度與該下表面測量溫度之間的溫度差大於預設閾值時控制模組向加熱模組發送控制信號；該加熱模組改變加熱功率以使得該溫度差小於該預設閾值；重複上述冷卻過程，直至該外延片完成冷卻過程。 In a second aspect, embodiments of the present invention provide a cooling method for epitaxial equipment. The cooling method includes: After the epitaxial wafer is deposited, the heating power is set according to the measured temperature of the upper surface and the lower surface of the epitaxial wafer to reduce the temperature of the epitaxial wafer; when the temperature difference between the measured temperature of the upper surface and the measured temperature of the lower surface When it is greater than the preset threshold, the control module sends a control signal to the heating module; the heating module changes the heating power so that the temperature difference is less than the preset threshold; the above cooling process is repeated until the epitaxial wafer completes the cooling process.
本發明實施例提供了一種外延設備冷卻系統和方法；通過溫度檢測模組獲取位於外延片的上表面測量溫度和下表面測量溫度，控制模組根據外延片的上表面測量溫度和下表面測量溫度的溫度差向加熱模組發送控制信號，加熱模組改變加熱功率以降低溫度差，降低外延片邊緣的內應力，降低滑移缺陷產生的風險，增強外延片品質。Embodiments of the present invention provide an epitaxial equipment cooling system and method; the upper surface measurement temperature and the lower surface measurement temperature of the epitaxial wafer are obtained through the temperature detection module, and the control module measures the upper surface temperature and the lower surface measurement temperature of the epitaxial wafer. The temperature difference sends a control signal to the heating module, and the heating module changes the heating power to reduce the temperature difference, reduce the internal stress at the edge of the epitaxial wafer, reduce the risk of slip defects, and enhance the quality of the epitaxial wafer.
為利 貴審查委員了解本發明之技術特徵、內容與優點及其所能達到之功效，茲將本發明配合附圖及附件，並以實施例之表達形式詳細說明如下，而其中所使用之圖式，其主旨僅為示意及輔助說明書之用，未必為本發明實施後之真實比例與精準配置，故不應就所附之圖式的比例與配置關係解讀、侷限本發明於實際實施上的申請範圍，合先敘明。In order to help the review committee understand the technical features, content and advantages of the present invention and the effects it can achieve, the present invention is described in detail below in the form of embodiments with the accompanying drawings and attachments, and the drawings used therein are , its purpose is only for illustration and auxiliary description, and may not represent the actual proportions and precise configurations after implementation of the present invention. Therefore, the proportions and configuration relationships of the attached drawings should not be interpreted or limited to the actual implementation of the present invention. The scope shall be stated first.
在本發明實施例的描述中，需要理解的是，術語“長度”、“寬度”、“上”、“下”、“前”、“後”、“左”、“右”、“垂直”、“水平”、“頂”、“底”“內”、“外”等指示的方位或位置關係為基於附圖所示的方位或位置關係，僅是為了便於描述本發明實施例和簡化描述，而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作，因此不能理解為對本發明的限制。In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical" The orientations or positional relationships indicated by "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description. , rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be construed as a limitation of the present invention.
此外，術語“第一”、“第二”僅用於描述目的，而不能理解為指示或暗示相對重要性或者隱含指明所指示的技術特徵的數量。由此，限定有“第一”、“第二”的特徵可以明示或者隱含地包括一個或者更多個所述特徵。在本發明實施例的描述中，“多個”的含義是兩個或兩個以上，除非另有明確具體的限定。In addition, the terms “first” and “second” are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Thus, features defined as “first” and “second” may explicitly or implicitly include one or more of the described features. In the description of the embodiments of the present invention, "plurality" means two or more than two, unless otherwise explicitly and specifically limited.
在本發明實施例中，除非另有明確的規定和限定，術語“安裝”、“相連”、“連接”、“固定”等術語應做廣義理解，例如，可以是固定連接，也可以是可拆卸連接，或成一體；可以是機械連接，也可以是電連接；可以是直接相連，也可以通過中間媒介間接相連，可以是兩個元件內部的連通或兩個元件的相互作用關係。對於本領域的具通常知識者而言，可以根據具體情況理解上述術語在本發明實施例中的具體含義。In the embodiments of the present invention, unless otherwise expressly stipulated and limited, the terms "installation", "connection", "connection", "fixing" and other terms should be understood in a broad sense. For example, it can be a fixed connection or a removable connection. Disassembly and connection, or integration; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two elements or an interaction between two elements. For those with ordinary knowledge in the art, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.
下面將結合本發明實施例中的圖式，對本發明實施例中的技術方案進行清楚、完整地描述。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention.
在SiHCl 3（SiCI 4）氫（H 2）還原法外延一般在1100-1250℃的高溫下進行，在冷卻過程中，由於熱場分佈不均勻、基座與矽片接觸不良等原因都會不同程度地產生熱應力。熱應力可以使材料發生範性形變。如果晶體中處於某一晶面兩側的部分發生相對滑移時，滑移晶面中，滑移部分與未滑移部分的交界處就形成位元錯，可能在表面生成1nm至10nm數量級的臺階。相關技術中，常壓外延沉積法製備外延矽片的裝置示意圖如圖1所示，在外延矽片生長腔室內放置一個高純石墨基座1，該生長腔室的上下壁為透明且耐高溫的石英材質，將之稱為上下石英穹頂2，在石墨基座1上放置外延片，利用紅外燈3和紅外燈4快速加熱以提供外延反應所需要的熱量。在完成外延生長後的降溫過程中，為紅外燈3和紅外燈4設定一個較低的固定功率開始降低外延片的溫度，參見圖1，位於外延片上方的紅外燈3直接照射在外延片的上表面對外延片加熱，然而位於石墨基座1下方的紅外燈4照射在石墨基座1的下表面，熱量通過石墨基座1的傳導才能抵達外延片的下表面，這使得在降溫過程中，由於外延片上表面與下表面接收熱量的效率不同，產生較大的溫度差異，如圖2所示，由於外延片上下受熱方式不同導致在降溫過程中，絕大部分時間外延片下表面溫度相對於上表面溫度較低，導致受熱分佈不均勻，增大外延片邊緣的內應力，從而矽單晶結構在內應力下遭到破壞，產生滑移缺陷。 In the SiHCl 3 (SiCI 4 ) hydrogen (H 2 ) reduction method epitaxy is generally performed at a high temperature of 1100-1250°C. During the cooling process, the temperature will vary to varying degrees due to uneven distribution of the thermal field and poor contact between the base and the silicon wafer. Thermal stress occurs in the ground. Thermal stress can cause dimensional deformation of materials. If the parts on both sides of a certain crystal plane in the crystal undergo relative slip, dislocations will form at the interface between the slipped part and the unslipped part in the slip crystal plane, which may generate dislocations on the surface in the order of 1nm to 10nm. steps. In related art, a schematic diagram of a device for preparing epitaxial silicon wafers by atmospheric pressure epitaxial deposition is shown in Figure 1. A high-purity graphite base 1 is placed in an epitaxial silicon wafer growth chamber. The upper and lower walls of the growth chamber are transparent and high temperature resistant. The quartz material is called the upper and lower quartz domes 2. The epitaxial wafer is placed on the graphite base 1 and rapidly heated by infrared lamps 3 and 4 to provide the heat required for the epitaxial reaction. During the cooling process after the epitaxial growth is completed, a lower fixed power is set for the infrared lamp 3 and the infrared lamp 4 to start to reduce the temperature of the epitaxial wafer. Refer to Figure 1. The infrared lamp 3 located above the epitaxial wafer directly irradiates the epitaxial wafer. The upper surface heats the epitaxial wafer. However, the infrared lamp 4 located below the graphite base 1 irradiates the lower surface of the graphite base 1. The heat reaches the lower surface of the epitaxial wafer only through the conduction of the graphite base 1, which makes the cooling process , due to the different efficiency of receiving heat between the upper surface and the lower surface of the epitaxial wafer, a large temperature difference is produced. As shown in Figure 2, due to the different heating methods of the upper and lower epitaxial wafers, during the cooling process, the temperature of the lower surface of the epitaxial wafer is relatively high most of the time. The lower temperature on the upper surface leads to uneven heating distribution and increases the internal stress at the edge of the epitaxial wafer. As a result, the silicon single crystal structure is destroyed under the internal stress and produces slip defects.
因此，針對上述所面臨的技術問題，基於減小冷卻過程中外延片上下表面的溫度差異，使得外延片的邊緣的內應力減小，能夠避免滑移缺陷得到晶格結構完美的單晶矽外延片的構思，本發明提出了一種能夠用於常壓外延沉積法製備外延矽片的裝置的冷卻系統100，參見圖3，該冷卻系統包括加熱模組10、控制模組（未示出）、石墨基座1和溫度檢測模組（未示出）。通過溫度檢測模組獲取位於石墨基座1上的外延片的上表面測量溫度和下表面測量溫度，控制模組根據外延片的上表面測量溫度和下表面測量溫度的溫度差向加熱模組發送控制信號，加熱模組10改變加熱功率以降低溫度差，降低外延片邊緣的內應力，降低滑移缺陷產生的風險，增強外延片品質。Therefore, in view of the above technical problems faced, based on reducing the temperature difference between the upper and lower surfaces of the epitaxial wafer during the cooling process, the internal stress at the edge of the epitaxial wafer is reduced, and slip defects can be avoided to obtain single crystal silicon epitaxy with a perfect lattice structure. The invention proposes a cooling system 100 for a device for preparing epitaxial silicon wafers by atmospheric pressure epitaxial deposition. Referring to Figure 3, the cooling system includes a heating module 10, a control module (not shown), Graphite base 1 and temperature detection module (not shown). The temperature measured on the upper surface and the measured temperature on the lower surface of the epitaxial wafer located on the graphite base 1 is obtained through the temperature detection module. The control module sends a message to the heating module according to the temperature difference between the measured temperature on the upper surface and the measured temperature on the lower surface of the epitaxial wafer. By controlling the signal, the heating module 10 changes the heating power to reduce the temperature difference, reduce the internal stress at the edge of the epitaxial wafer, reduce the risk of slip defects, and enhance the quality of the epitaxial wafer.
加熱模組10用於以不同的加熱功率的方式向外延反應提供熱量，參見圖3，加熱模組包括第一加熱單元5和第二加熱單元6，第一加熱單元5設置在外延片的上方通過熱輻射的方式向外延片的上表面直接進行熱量傳遞，第二加熱單元6設置在外延片的下方也通過熱輻射的方式向外延片的下表面進行熱量傳遞。進一步地，第一加熱單元5和第二加熱單元6由兩個或更多個鹵素燈組成，以向外延片更均勻地進行熱量傳遞。第一加熱單元5和第二加熱單元6能夠改變自身功率，減少外延片接收到的熱量以實現降低外延片溫度的效果，在完成外延生長後的冷卻過程中，相比較於滿足外延生長時加熱模組的設定功率，同時降低第一加熱單元5和第二加熱單元6的功率，以分別降低外延片上表面溫度和下表面溫度。The heating module 10 is used to provide heat to the epitaxial reaction in the form of different heating powers. See Figure 3. The heating module includes a first heating unit 5 and a second heating unit 6. The first heating unit 5 is arranged above the epitaxial wafer. Heat is directly transferred to the upper surface of the epitaxial wafer by thermal radiation, and the second heating unit 6 is disposed below the epitaxial wafer and also transfers heat to the lower surface of the epitaxial wafer by thermal radiation. Further, the first heating unit 5 and the second heating unit 6 are composed of two or more halogen lamps to transfer heat to the epitaxial wafer more evenly. The first heating unit 5 and the second heating unit 6 can change their own power to reduce the heat received by the epitaxial wafer to achieve the effect of lowering the temperature of the epitaxial wafer. In the cooling process after the epitaxial growth is completed, compared with the heating when the epitaxial growth is satisfied, The set power of the module simultaneously reduces the power of the first heating unit 5 and the second heating unit 6 to respectively reduce the upper surface temperature and lower surface temperature of the epitaxial wafer.
參見圖3，外延片在整個生成外延的過程中均被水平放置在石墨基座1上，石墨基座1由高純石墨製成，具有較好的導熱性能。位於石墨基座1上的外延片的上表面通過第一加熱單元5直接照射，第二加熱單元6用於向外延片下表面傳遞熱量，即第二加熱單元直接照射石墨基座1的下表面，石墨基座1在接收到熱量後將熱量通過與外延片直接接觸的方式傳遞給外延片，因此石墨基座1的下表面溫度能夠很好地表徵外延片的下表面溫度。Referring to Figure 3, the epitaxial wafer is placed horizontally on the graphite base 1 during the entire epitaxial generation process. The graphite base 1 is made of high-purity graphite and has good thermal conductivity. The upper surface of the epitaxial wafer located on the graphite base 1 is directly irradiated through the first heating unit 5, and the second heating unit 6 is used to transfer heat to the lower surface of the epitaxial wafer, that is, the second heating unit directly irradiates the lower surface of the graphite base 1 , after receiving the heat, the graphite base 1 transfers the heat to the epitaxial wafer through direct contact with the epitaxial wafer. Therefore, the lower surface temperature of the graphite base 1 can well characterize the lower surface temperature of the epitaxial wafer.
上述不同的熱量傳遞方式導致在冷卻過程中外延片上下表面的溫度不一致，容易產生溫度差，引起滑移缺陷，該冷卻系統還包括控制模組，控制模組能夠根據外延片的上表面測量溫度和下表面測量溫度計算出外延片上下表面的溫度差，該控制模組內具有一個關於該溫度差的預設閾值，該預設閾值通過實際生產需求設置並且可以根據不同的生產步驟和產品要求進行更改。控制模組將溫度差與預設閾值比較，當溫度差小於預設閾值時，表明外延片的上表面測量溫度和下表面測量溫度相差在合理範圍內，在該溫度下的冷卻過程不會導致外延片內部的應力過大；當溫度差大於預設閾值時，表明外延片的上表面測量溫度和下表面測量溫度相差超出合理範圍，在該溫度下的冷卻過程會導致外延片內部的應力過大，產生滑移缺陷。因此，當溫度差大於預設閾值時，控制模組向第一加熱單元5發出第一控制信號和/或向第二控制單元發出第二控制信號，加熱模組中的第一加熱單元5和第二加熱單元6開始控制自身的加熱功率，由於熱量傳遞方式不同，外延片的上表面測量溫度常大於下表面測量溫度，因此第一加熱單元5降低自身加熱功率以降低外延片上表面溫度，第二加熱單元6提高自身加熱功率以提高外延片下表面溫度，相應的外延片的上表面測量溫度和下表面測量溫度的溫度差減小，使得外延片冷卻過程的溫度符合步驟需求。The above-mentioned different heat transfer methods lead to inconsistent temperatures on the upper and lower surfaces of the epitaxial wafer during the cooling process, which can easily produce temperature differences and cause slip defects. The cooling system also includes a control module that can measure the temperature based on the upper surface of the epitaxial wafer. and the measured temperature of the lower surface to calculate the temperature difference between the upper and lower surfaces of the epitaxial wafer. The control module has a preset threshold for the temperature difference. The preset threshold is set according to actual production requirements and can be performed according to different production steps and product requirements. Change. The control module compares the temperature difference with the preset threshold. When the temperature difference is less than the preset threshold, it indicates that the difference between the measured temperature on the upper surface and the measured temperature on the lower surface of the epitaxial wafer is within a reasonable range, and the cooling process at this temperature will not cause The stress inside the epitaxial wafer is too large; when the temperature difference is greater than the preset threshold, it means that the difference between the measured temperature of the upper surface and the lower surface of the epitaxial wafer exceeds a reasonable range. The cooling process at this temperature will cause excessive stress inside the epitaxial wafer. Slip defects occur. Therefore, when the temperature difference is greater than the preset threshold, the control module sends a first control signal to the first heating unit 5 and/or sends a second control signal to the second control unit. The first heating unit 5 and the second control signal in the heating module The second heating unit 6 begins to control its own heating power. Due to different heat transfer methods, the measured temperature of the upper surface of the epitaxial wafer is often greater than the measured temperature of the lower surface. Therefore, the first heating unit 5 reduces its own heating power to reduce the temperature of the upper surface of the epitaxial wafer. The second heating unit 6 increases its own heating power to increase the temperature of the lower surface of the epitaxial wafer. The corresponding temperature difference between the measured temperature of the upper surface and the lower surface of the epitaxial wafer is reduced, so that the temperature of the epitaxial wafer cooling process meets the step requirements.
該冷卻系統還包括溫度檢測模組，溫度檢測模組經配置為測量外延片的上表面溫度以獲得上表面測量溫度，並且測量外延片的下表面溫度以獲得下表面測量溫度。溫度檢測模組能夠通過紅外溫度測量儀、溫度感測器等裝置實現。The cooling system also includes a temperature detection module configured to measure the upper surface temperature of the epitaxial wafer to obtain the upper surface measurement temperature, and to measure the lower surface temperature of the epitaxial wafer to obtain the lower surface measurement temperature. The temperature detection module can be implemented through infrared temperature measuring instruments, temperature sensors and other devices.
通過圖3所示的具有該冷卻系統的常壓外延沉積法製備外延矽片的裝置進行對外延片的冷卻的過程，可以包括降低第一加熱單元和第二加熱單元的功率；隨後通過溫度檢測模組測量獲得上表面測量溫度和下表面測量溫度；控制模組通過上表面測量溫度和下表面測量溫度計算出外延片上下表面的溫度差，並將溫度差與預設閾值比較；當溫度差大於預設閾值時，控制模組第一加熱單元和第二加熱單元發送控制信號，第一加熱單元和/或第二加熱單元作出相應的功率調整，從而改變外延片的上表面溫度和/或下表面溫度，以降低外延片上下表面的溫度差，使得外延片的冷卻過程滿足步驟需求，最終溫度曲線如圖4所示。參見圖5，其示出了本發明實施例提供的一種外延設備冷卻方法，該冷卻方法能夠應用於圖3所示的具有該冷卻系統的常壓外延沉積法製備外延矽片的裝置，該冷卻方法包括以下步驟： S501：在外延片完成外延沉積後，根據外延片的上表面測量溫度和下表面測量溫度設定加熱功率以降低外延片的溫度； S502：當上表面測量溫度與下表面測量溫度之間的溫度差大於預設閾值時控制模組向加熱模組發送控制信號； S503：加熱模組改變加熱功率以使該溫度差小於該預設閾值； S504：重複上述冷卻過程，直至該外延片完成冷卻過程。 The process of cooling the epitaxial wafer through the device for preparing epitaxial silicon wafers by the atmospheric pressure epitaxial deposition method with the cooling system shown in Figure 3 may include reducing the power of the first heating unit and the second heating unit; and then detecting the temperature through The module measures to obtain the upper surface measured temperature and the lower surface measured temperature; the control module calculates the temperature difference between the upper and lower surfaces of the epitaxial wafer through the upper surface measured temperature and the lower surface measured temperature, and compares the temperature difference with the preset threshold; when the temperature difference is greater than When the threshold is preset, the first heating unit and the second heating unit of the control module send control signals, and the first heating unit and/or the second heating unit make corresponding power adjustments, thereby changing the upper surface temperature and/or lower surface temperature of the epitaxial wafer. Surface temperature to reduce the temperature difference between the upper and lower surfaces of the epitaxial wafer so that the cooling process of the epitaxial wafer meets step requirements. The final temperature curve is shown in Figure 4. Referring to Figure 5, it shows an epitaxial equipment cooling method provided by an embodiment of the present invention. The cooling method can be applied to the device for preparing epitaxial silicon wafers by the atmospheric pressure epitaxial deposition method with the cooling system shown in Figure 3. The cooling method The method includes the following steps: S501: After the epitaxial wafer completes epitaxial deposition, the heating power is set according to the measured temperature of the upper surface and the lower surface of the epitaxial wafer to reduce the temperature of the epitaxial wafer; S502: When the temperature difference between the upper surface measured temperature and the lower surface measured temperature is greater than the preset threshold, the control module sends a control signal to the heating module; S503: The heating module changes the heating power so that the temperature difference is less than the preset threshold; S504: Repeat the above cooling process until the epitaxial wafer completes the cooling process.
通過圖5所示的技術方案，本發明能夠通過控制模組監管外延片上下表面的溫度差，從而時刻調整加熱模組的加熱功率，使得外延片在冷卻過程中不產生滑移缺陷。進一步地，加熱模組改變功率以使得溫度差小於預設閾值具體包括： 增強第二加熱單元的加熱功率以減緩矽片下表面的溫度降低速率，和/或，降低第一加熱單元的加熱功率以加快矽片上表面的溫度降低速率，直至該溫度差小於預設閾值。 Through the technical solution shown in Figure 5, the present invention can monitor the temperature difference between the upper and lower surfaces of the epitaxial wafer through the control module, thereby adjusting the heating power of the heating module at all times, so that the epitaxial wafer does not produce slip defects during the cooling process. Further, changing the power of the heating module so that the temperature difference is less than the preset threshold specifically includes: Enhance the heating power of the second heating unit to slow down the temperature decrease rate of the lower surface of the silicon wafer, and/or reduce the heating power of the first heating unit to accelerate the temperature decrease rate of the upper surface of the silicon wafer until the temperature difference is less than a preset threshold .
為了將相關技術中的一步降溫優化為本發明所提出的根據溫度差進行分段式降溫，操作人員可以根據實際加工需求對預設閾值進行調整，通過改變預設閾值的大小，使得觸發控制模組向加熱模組發送控制信號的次數產生改變，以多次重複上述冷卻過程，可選地，上述冷卻過程能夠至少重複兩次。In order to optimize the one-step cooling in the related art to the segmented cooling based on the temperature difference proposed in the present invention, the operator can adjust the preset threshold according to the actual processing requirements, and change the size of the preset threshold to trigger the control mode. The number of times the group sends control signals to the heating module is changed to repeat the above-mentioned cooling process multiple times. Optionally, the above-mentioned cooling process can be repeated at least twice.
為了解決本發明所提出的技術問題，本發明基於減小冷卻過程中外延片上下表面的溫度差異，使得外延片的邊緣的內應力減小，能夠避免滑移缺陷得到晶格結構完美的單晶矽外延片的構思，提出了通過溫度檢測模組和控制模組控制加熱模組，以使得外延片上下表面溫度差值在能接受的合理範圍內，獲得符合品質要求的外延片。In order to solve the technical problems raised by the present invention, the present invention is based on reducing the temperature difference between the upper and lower surfaces of the epitaxial wafer during the cooling process, so that the internal stress at the edge of the epitaxial wafer is reduced, and slip defects can be avoided to obtain a single crystal with a perfect lattice structure. The concept of silicon epitaxial wafers proposes controlling the heating module through a temperature detection module and a control module, so that the temperature difference between the upper and lower surfaces of the epitaxial wafer is within a reasonable and acceptable range, and an epitaxial wafer that meets quality requirements is obtained.
需要說明的是：本發明實施例所記載的技術方案之間，在不衝突的情況下，可以任意組合。It should be noted that the technical solutions recorded in the embodiments of the present invention can be combined arbitrarily as long as there is no conflict.
以上僅為本發明之較佳實施例，並非用來限定本發明之實施範圍，如果不脫離本發明之精神和範圍，對本發明進行修改或者等同替換，均應涵蓋在本發明申請專利範圍的保護範圍當中。The above are only preferred embodiments of the present invention and are not intended to limit the implementation scope of the present invention. If the present invention is modified or equivalently substituted without departing from the spirit and scope of the present invention, the protection shall be covered by the patent scope of the present invention. within the range.
1:石墨基座 2:上下石英穹頂 3:紅外燈 4:紅外燈 5:第一加熱單元 6:第二加熱單元 10:加熱模組 S501-S504:步驟 1:Graphite base 2: Upper and lower quartz domes 3: Infrared light 4: Infrared light 5: First heating unit 6: Second heating unit 10:Heating module S501-S504: Steps
圖1為相關技術中常壓外延沉積法製備外延矽片的裝置的示意圖； 圖2為使用圖1中的裝置對外延片進行冷卻的溫度曲線圖； 圖3為具有本發明實施例提供的一種冷卻系統的常壓外延沉積法製備外延矽片的裝置的示意圖； 圖4為使用圖3中的裝置對外延片進行冷卻的溫度曲線圖； 圖5為本發明實施例提供的一種冷卻方法的流程示意圖。 Figure 1 is a schematic diagram of a device for preparing epitaxial silicon wafers by atmospheric pressure epitaxial deposition in the related art; Figure 2 is a temperature curve diagram of epitaxial wafer cooling using the device in Figure 1; Figure 3 is a schematic diagram of a device for preparing epitaxial silicon wafers by atmospheric pressure epitaxial deposition with a cooling system provided by an embodiment of the present invention; Figure 4 is a temperature curve diagram of epitaxial wafer cooling using the device in Figure 3; Figure 5 is a schematic flowchart of a cooling method provided by an embodiment of the present invention.
1:石墨基座 1:Graphite base
2:上下石英穹頂 2: Upper and lower quartz domes
5:第一加熱單元 5: First heating unit
6:第二加熱單元 6: Second heating unit
10:加熱模組 10:Heating module
Claims (9)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210108042.1A CN114481314A (en) | 2022-01-28 | 2022-01-28 | Epitaxial equipment cooling system and method |
| CN202210108042.1 | 2022-01-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202302931A TW202302931A (en) | 2023-01-16 |
| TWI827298B true TWI827298B (en) | 2023-12-21 |
Family
ID=81477517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111137955A TWI827298B (en) | 2022-01-28 | 2022-10-06 | Epitaxial equipment cooling system and method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114481314A (en) |
| TW (1) | TWI827298B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115125619B (en) * | 2022-07-12 | 2023-07-04 | 季华实验室 | Cooling system and method for epitaxial wafer, electronic equipment and storage medium |
| CN116107366B (en) * | 2023-04-07 | 2023-06-13 | 中国空气动力研究与发展中心低速空气动力研究所 | Temperature control method, controller and device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100143579A1 (en) * | 2008-12-10 | 2010-06-10 | Sumco Techxiv Corporation | Method and apparatus for manufacturing epitaxial silicon wafer |
| TW201133553A (en) * | 2009-08-21 | 2011-10-01 | Varian Semiconductor Equipment | Dual heating for precise wafer temperature control |
| TW201715068A (en) * | 2015-06-26 | 2017-05-01 | Ｓｕｍｃｏ股份有限公司 | Manufacturing method of an epitaxial silicon wafer |
| CN108411362A (en) * | 2017-02-09 | 2018-08-17 | 北京北方华创微电子装备有限公司 | Chamber and epitaxial growth equipment |
| TW202118897A (en) * | 2019-07-26 | 2021-05-16 | 美商應用材料股份有限公司 | Temperature profile measurement and synchronized control on substrate and susceptor in an epitaxy chamber |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0823492A3 (en) * | 1996-08-07 | 1999-01-20 | Concept Systems Design Inc. | Zone heating system with feedback control |
| US8530801B2 (en) * | 2005-07-06 | 2013-09-10 | Sumco Techxiv Kabushiki Kaisha | Method and apparatus for manufacturing semiconductor wafer |
| CN101906622B (en) * | 2010-08-20 | 2013-03-20 | 江苏中晟半导体设备有限公司 | Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system |
| US20130130184A1 (en) * | 2011-11-21 | 2013-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and Method for Controlling Wafer Temperature |
-
2022
- 2022-01-28 CN CN202210108042.1A patent/CN114481314A/en active Pending
- 2022-10-06 TW TW111137955A patent/TWI827298B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100143579A1 (en) * | 2008-12-10 | 2010-06-10 | Sumco Techxiv Corporation | Method and apparatus for manufacturing epitaxial silicon wafer |
| TW201133553A (en) * | 2009-08-21 | 2011-10-01 | Varian Semiconductor Equipment | Dual heating for precise wafer temperature control |
| TW201715068A (en) * | 2015-06-26 | 2017-05-01 | Ｓｕｍｃｏ股份有限公司 | Manufacturing method of an epitaxial silicon wafer |
| CN108411362A (en) * | 2017-02-09 | 2018-08-17 | 北京北方华创微电子装备有限公司 | Chamber and epitaxial growth equipment |
| TW202118897A (en) * | 2019-07-26 | 2021-05-16 | 美商應用材料股份有限公司 | Temperature profile measurement and synchronized control on substrate and susceptor in an epitaxy chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202302931A (en) | 2023-01-16 |
| CN114481314A (en) | 2022-05-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI827298B (en) | Epitaxial equipment cooling system and method | |
| US9758871B2 (en) | Method and apparatus for manufacturing epitaxial silicon wafer | |
| KR100306527B1 (en) | Manufacturing method of thin film semiconductor device, thin film semiconductor device | |
| TWI815810B (en) | Showerhead assembly, processing chamber and method for temperature controlling | |
| JP3338884B2 (en) | Semiconductor processing equipment | |
| TW201019399A (en) | A microwave activation annealing process | |
| TW574762B (en) | Method for growing monocrystal GaN on silicon substrate | |
| JPH10223621A (en) | Vacuum treating apparatus | |
| JP4832067B2 (en) | Silicon member and manufacturing method thereof | |
| US7032536B2 (en) | Thin film formation apparatus including engagement members for support during thermal expansion | |
| CN101996869A (en) | Preparation method and preparation device for poly-silicon thin film | |
| TW201307623A (en) | Low temperature methods and apparatus for microwave crystal regrowth | |
| JP6245416B1 (en) | Method for manufacturing silicon carbide epitaxial wafer and method for manufacturing silicon carbide semiconductor device | |
| CN114613699A (en) | Extension control method of sliding line under ultrahigh temperature condition for BCD (binary coded decimal) process | |
| JP3960792B2 (en) | Plasma CVD apparatus and method for manufacturing amorphous silicon thin film | |
| WO2015070589A1 (en) | Manufacturing method for polycrystalline silicon thin-film substrate | |
| JPWO2009031520A1 (en) | Plasma processing apparatus, plasma processing method, and semiconductor device | |
| JPWO2005088688A1 (en) | Substrate processing apparatus and semiconductor device manufacturing method | |
| JPS60200519A (en) | Heating element | |
| KR20020011793A (en) | wide area heating module for fabricating semiconductor device | |
| JP5378779B2 (en) | Epitaxial wafer manufacturing method | |
| JP2006216864A (en) | Compound semiconductor manufacturing device | |
| JP2004228462A (en) | Method and device for thermally treating wafer | |
| JP2002100773A (en) | Semiconductor device and its manufacturing method | |
| TWI834314B (en) | A silicon wafer substrate transfer method that improves the flatness of epitaxial wafers |