TWI825945B - Power supply device with high conversion efficiency - Google Patents
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Description
本發明係關於一種電源供應器,特別係關於一種高轉換效率之電源供應器。The present invention relates to a power supply, and in particular to a power supply with high conversion efficiency.
電源供應器為筆記型電腦領域中不可或缺之元件。然而,若電源供應器之轉換效率不足,則很容易造成相關筆記型電腦之整體操作性能下滑。有鑑於此,勢必要提出一種全新之解決方案,以克服先前技術所面臨之困境。The power supply is an indispensable component in the notebook computer field. However, if the conversion efficiency of the power supply is insufficient, it will easily cause the overall operating performance of the related notebook computer to decline. In view of this, it is necessary to propose a new solution to overcome the difficulties faced by previous technologies.
在較佳實施例中,本發明提出一種高轉換效率之電源供應器,包括:一橋式整流器,根據一第一輸入電位和一第二輸入電位來產生一整流電位;一升壓電感器,接收該整流電位;一第一功率切換器,根據一第一時脈電位來選擇性地將該升壓電感器耦接至一接地電位;一脈波寬度調變積體電路,根據一回授電位來產生該第一時脈電位;一第一輸出級電路,耦接至該升壓電感器,並產生一中間電位;一回授補償電路,根據該中間電位來產生該回授電位;一變壓器,包括一主線圈、一副線圈,以及一輔助線圈,其中該主線圈係用於接收該中間電位;一第二功率切換器,根據一第二時脈電位來選擇性地將該主線圈耦接至該接地電位;一第二輸出級電路,耦接至該副線圈,並產生一輸出電位;一第三輸出級電路,耦接至該輔助線圈,並產生一供應電位;以及一微控制器,產生該第二時脈電位,並偵測來自該第二功率切換器之一感測電位,其中該微控制器更根據該供應電位和該感測電位來選擇性地致能或禁能該回授補償電路。In a preferred embodiment, the present invention proposes a power supply with high conversion efficiency, including: a bridge rectifier to generate a rectified potential according to a first input potential and a second input potential; a boost inductor to receive the rectifying potential; a first power switch to selectively couple the boost inductor to a ground potential according to a first clock potential; a pulse width modulation integrated circuit according to a feedback potential to generate the first clock potential; a first output stage circuit coupled to the boost inductor and generating an intermediate potential; a feedback compensation circuit to generate the feedback potential according to the intermediate potential; a transformer , including a main coil, a auxiliary coil, and an auxiliary coil, wherein the main coil is used to receive the intermediate potential; a second power switch selectively couples the main coil according to a second clock potential connected to the ground potential; a second output stage circuit coupled to the auxiliary coil and generating an output potential; a third output stage circuit coupled to the auxiliary coil and generating a supply potential; and a microcontroller The microcontroller generates the second clock potential and detects a sensing potential from the second power switch, wherein the microcontroller further selectively enables or disables the power according to the supply potential and the sensing potential. The feedback compensation circuit.
為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉出本發明之具體實施例,並配合所附圖式,作詳細說明如下。In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are listed below and described in detail with reference to the accompanying drawings.
在說明書及申請專利範圍當中使用了某些詞彙來指稱特定的元件。本領域技術人員應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」及「包括」一詞為開放式的用語,故應解釋成「包含但不僅限定於」。「大致」一詞則是指在可接受的誤差範圍內,本領域技術人員能夠在一定誤差範圍內解決所述技術問題,達到所述基本之技術效果。此外,「耦接」一詞在本說明書中包含任何直接及間接的電性連接手段。因此,若文中描述一第一裝置耦接至一第二裝置,則代表該第一裝置可直接電性連接至該第二裝置,或經由其它裝置或連接手段而間接地電性連接至該第二裝置。Certain words are used in the specification and patent claims to refer to specific components. Those skilled in the art will understand that hardware manufacturers may use different names to refer to the same component. This specification and the patent application do not use differences in names as a way to distinguish components, but differences in functions of components as a criterion for distinction. The words "include" and "include" mentioned throughout the specification and the scope of the patent application are open-ended terms, and therefore should be interpreted as "include but not limited to." The term "approximately" means that within an acceptable error range, those skilled in the art can solve the technical problem and achieve the basic technical effect within a certain error range. In addition, the word "coupling" in this specification includes any direct and indirect electrical connection means. Therefore, if a first device is coupled to a second device, it means that the first device can be directly electrically connected to the second device, or indirectly electrically connected to the second device via other devices or connections. Two devices.
第1圖係顯示根據本發明一實施例所述之電源供應器100之示意圖。例如,電源供應器100可應用於桌上型電腦、筆記型電腦,或一體成形電腦。如第1圖所示,電源供應器100包括:一橋式整流器110、一升壓電感器LU、一第一功率切換器120、一脈波寬度調變積體電路(Pulse Width Modulation Integrated Circuit,PWM IC)130、一第一輸出級電路140、一回授補償電路150、一變壓器160、一第二功率切換器170、一第二輸出級電路180、一第三輸出級電路190,以及一微控制器(Microcontroller Unit,MCU)195。必須注意的是,雖然未顯示於第1圖中,但電源供應器100更可包括其他元件,例如:一穩壓器或(且)一負回授電路。Figure 1 is a schematic diagram of a
橋式整流器110可根據一第一輸入電位VIN1和一第二輸入電位VIN2來產生一整流電位VR,其中第一輸入電位VIN1和第二輸入電位VIN2之間可形成具有任意頻率和任意振幅之一交流電壓。例如,交流電壓之頻率可約為50Hz或60Hz,而交流電壓之方均根值(Root Mean Square,RMS)可約由90V至264V,但亦不僅限於此。升壓電感器LU可接收整流電位VR。第一功率切換器120可根據一第一時脈電位VA1來選擇性地將升壓電感器LU耦接至一接地電位VSS(例如:0V)。例如,若第一時脈電位VA1為一高邏輯位準(亦即,邏輯「1」),則第一功率切換器120可將升壓電感器LU耦接至接地電位VSS(亦即,第一功率切換器120可近似於一短路路徑);反之,若第一時脈電位VA1為一低邏輯位準(亦即,邏輯「0」),則第一功率切換器120不會將升壓電感器LU耦接至接地電位VSS(亦即,第一功率切換器120可近似於一開路路徑)。脈波寬度調變積體電路130可根據一回授電位VF來產生第一時脈電位VA1。第一輸出級電路140係耦接至升壓電感器LU,並可產生一中間電位VE。在一些實施例中,橋式整流器110、升壓電感器LU、第一功率切換器120,以及第一輸出級電路140可共同形成電源供應器100之一功率因數校正器(Power Factor Corrector)。The
回授補償電路150可根據中間電位VE來產生回授電位VF。變壓器160包括一主線圈161、一副線圈162,以及一輔助線圈163,其中主線圈161和輔助線圈163皆可位於變壓器160之同一側,而副線圈162則可位於變壓器160之相對另一側。主線圈161可接收中間電位VE,而副線圈162和輔助線圈163則可回應於中間電位VE來進行操作。第二功率切換器170可根據一第二時脈電位VA2來選擇性地將主線圈161耦接至接地電位VSS。例如,若第二時脈電位VA2為一高邏輯位準,則第二功率切換器170可將主線圈161耦接至接地電位VSS(亦即,第二功率切換器170可近似於一短路路徑);反之,若第二時脈電位VA2為一低邏輯位準,則第二功率切換器170不會將主線圈161耦接至接地電位VSS(亦即,第二功率切換器170可近似於一開路路徑)。第二輸出級電路180係耦接至副線圈162,並可產生一輸出電位VOUT。例如,輸出電位VOUT可為一直流電位,其電位位準可介於18V至22V之間,但亦不僅限於此。第三輸出級電路190係耦接至輔助線圈163,並可產生一供應電位VP。The
微控制器195可由供應電位VP來進行供電。微控制器195可產生第二時脈電位VA2,並可偵測來自第二功率切換器170之一感測電位VS。另外,微控制器195更可根據供應電位VP和感測電位VS來選擇性地致能或禁能回授補償電路150。例如,微控制器195可輸出一通知電位VN至脈波寬度調變積體電路130,以間接地控制回授補償電路150。當回授補償電路150被致能時,電源供應器100之功率因數校正器將會一併被啟用;反之,當回授補償電路150被禁能時,電源供應器100之功率因數校正器將會一併被關閉。在此設計下,電源供應器100可根據即時之輸出條件來自動調整其內部電路,從而可大幅增加自身之轉換效率。The microcontroller 195 can be powered by the supply potential VP. The microcontroller 195 can generate the second clock potential VA2 and detect a sensing potential VS from the
以下實施例將介紹電源供應器100之詳細結構及操作方式。必須理解的是,這些圖式和敘述僅為舉例,而非用於限制本發明之範圍。The following embodiments will introduce the detailed structure and operation of the
第2圖係顯示根據本發明一實施例所述之電源供應器200之電路圖。在第2圖之實施例中,電源供應器200具有一第一輸入節點NIN1、一第二輸入節點NIN2,以及一輸出節點NOUT,並包括一橋式整流器210、一升壓電感器LU、一第一功率切換器220、一脈波寬度調變積體電路230、一第一輸出級電路240、一回授補償電路250、一變壓器260、一第二功率切換器270、一第二輸出級電路280、一第三輸出級電路290,以及一微控制器295。電源供應器200之第一輸入節點NIN1和第二輸入節點NIN2可用於接收一第一輸入電位VIN1和一第二輸入電位VIN2。電源供應器200之輸出節點NOUT可用於輸出一輸出電位VOUT。Figure 2 is a circuit diagram of a
橋式整流器210包括一第一二極體D1、一第二二極體D2、一第三二極體D3,以及一第四二極體D4。第一二極體D1具有一陽極和一陰極,其中第一二極體D1之陽極係耦接至第一輸入節點NIN1,而第一二極體D1之陰極係耦接至一第一節點N1以輸出一整流電位VR。第二二極體D2具有一陽極和一陰極,其中第二二極體D2之陽極係耦接至第二輸入節點NIN2,而第二二極體D2之陰極係耦接至第一節點N1。第三二極體D3具有一陽極和一陰極,其中第三二極體D3之陽極係耦接至一接地電位VSS,而第三二極體D3之陰極係耦接至第一輸入節點NIN1。第四二極體D4具有一陽極和一陰極,其中第四二極體D4之陽極係耦接至接地電位VSS,而第四二極體D4之陰極係耦接至第二輸入節點NIN2。The
升壓電感器LU具有一第一端和一第二端,其中升壓電感器LU之第一端係耦接至第一節點N1以接收整流電位VR,而升壓電感器LU之第二端係耦接至一第二節點N2。The boost inductor LU has a first terminal and a second terminal, wherein the first terminal of the boost inductor LU is coupled to the first node N1 to receive the rectified potential VR, and the second terminal of the boost inductor LU is coupled to a second node N2.
第一功率切換器220包括一第一電晶體M1。例如,第一電晶體M1可為一N型金氧半場效電晶體(N-type Metal-Oxide-Semiconductor Field-Effect Transistor,NMOSFET)。第一電晶體M1具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第一電晶體M1之控制端係用於接收一第一時脈電位VA1,第一電晶體M1之第一端係耦接至接地電位VSS,而第一電晶體M1之第二端係耦接至第二節點N2。The
脈波寬度調變積體電路230可根據一回授電位VF來產生第一時脈電位VA1。例如,第一時脈電位VA1於電源供應器200剛初始化時可維持於一固定電位,而在電源供應器200進入正常使用階段後則可提供週期性之時脈波形。The pulse width modulation integrated
第一輸出級電路240包括一第五二極體D5和一第一電容器C1。第五二極體D5具有一陽極和一陰極,其中第五二極體D5之陽極係耦接至第二節點N2,而第五二極體D5之陰極係耦接至一第三節點N3以輸出一中間電位VE。第一電容器C1具有一第一端和一第二端,其中第一電容器C1之第一端係耦接至第三節點N3,而第一電容器C1之第二端係耦接至接地電位VSS。The first
在一些實施例中,橋式整流器210、升壓電感器LU、第一功率切換器220,以及第一輸出級電路240可共同形成電源供應器200之一功率因數校正器。另外,回授補償電路250可根據中間電位VE來產生回授電位VF,其電路結構將於後續之實施例中進行詳述。In some embodiments, the
變壓器260包括一主線圈261、一副線圈262,以及一輔助線圈263,其中變壓器260更可內建一激磁電感器LM。激磁電感器LM可為變壓器260製造時所附帶產生之一固有元件,其並非一外部獨立元件。主線圈261、輔助線圈263,以及激磁電感器LM皆可位於變壓器260之同一側(例如:一次側),而副線圈262則可位於變壓器260之相對另一側(例如:二次側,其可與一次側互相隔離開來)。詳細而言,主線圈261具有一第一端和一第二端,其中主線圈261之第一端係耦接至第三節點N3以接收中間電位VE,而主線圈261之第二端係耦接至一第四節點N4。激磁電感器LM具有一第一端和一第二端,其中激磁電感器LM之第一端係耦接至第三節點N3,而激磁電感器LM之第二端係耦接至第四節點N4。副線圈262具有一第一端和一第二端,其中副線圈262之第一端係耦接至一第五節點N5,而副線圈262之第二端係耦接至一共同節點NCM。例如,共同節點NCM可視為另一接地電位,其可與前述之接地電位VSS相同或相異。輔助線圈263具有一第一端和一第二端,其中輔助線圈263之第一端係耦接至一第六節點N6,而輔助線圈263之第二端係耦接至接地電位VSS。The
第二功率切換器270包括一第二電晶體M2和一感測電阻器RS。例如,第二電晶體M2可為一N型金氧半場效電晶體。第二電晶體M2具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第二電晶體M2之控制端係用於接收一第二時脈電位VA2,第二電晶體M2之第一端係耦接至一感測節點NS,而第二電晶體M2之第二端係耦接至第四節點N4。感測電阻器RS具有非常小之電阻值,其幾乎可忽略不計。感測電阻器RS具有一第一端和一第二端,其中感測電阻器RS之第一端係耦接至感測節點NS以輸出一感測電位VS至微控制器295,而感測電阻器RS之第二端係耦接至接地電位VSS。The
第二輸出級電路280包括一第六二極體D6和一第二電容器C2。第六二極體D6具有一陽極和一陰極,其中第六二極體D6之陽極係耦接至第五節點N5,而第六二極體D6之陰極係耦接至輸出節點NOUT。第二電容器C2具有一第一端和一第二端,其中第二電容器C2之第一端係耦接至輸出節點NOUT,而第二電容器C2之第二端係耦接至共同節點NCM。在一些實施例中,一輸出電流IOUT可流經第六二極體D6和第二電容器C2。The second
第三輸出級電路290包括一第七二極體D7和一第三電容器C3。第七二極體D7具有一陽極和一陰極,其中第七二極體D7之陽極係耦接至第六節點N6,而第七二極體D7之陰極係耦接至一供應節點NP以輸出一供應電位VP至微控制器295。第三電容器C3具有一第一端和一第二端,其中第三電容器C3之第一端係耦接至供應節點NP,而第三電容器C3之第二端係耦接至接地電位VSS。The third
微控制器295可包括各種電路,例如:一偵測電路、一儲存電路、一平均電路、一比較電路,或(且)一控制電路(未顯示),但亦不僅限於此。微控制器295可由供應電位VP來進行供電,並可產生第二時脈電位VA2。在一些實施例中,微控制器295可根據感測電位VS來計算出通過第二功率切換器270之一平均電流IAV,其中此平均電流IAV可與輸出電流IOUT兩者大致呈正比關係。詳細而言,微控制器295可先取得感測電位VS之一平均值,再將此平均值除以一既定電阻值(例如:感測電阻器RS之電阻值),從而可計算出前述之平均電流IAV。例如,平均電流IAV和輸出電流IOUT之間之關係可如下表一所述:
在一些實施例中,一電流對照表(例如:前述之表一)可預先儲存於微控制器295當中,使得微控制器295可根據平均電流IAV來取得輸出電流IOUT。另外,微控制器295還可藉由分析供應電位VP來計算出目前之輸出電位VOUT。因此,微控制器295將可根據供應電位VP和平均電流IAV來推估出電源供應器200之一輸出功率PW。接著,微控制器295還可將此輸出功率PW與一臨界值PTH互相比較。例如,前述之臨界值PTH可約為70W,但亦不僅限於此。在一些實施例中,若輸出功率PW高於或等於臨界值PTH,則微控制器295將可輸出具有低邏輯位準之一通知電位VN至脈波寬度調變積體電路230;反之,若輸出功率PW低於臨界值PTH,則微控制器295將可輸出具有高邏輯位準之通知電位VN至脈波寬度調變積體電路230。In some embodiments, a current comparison table (for example, the aforementioned table 1) can be stored in the
在一些實施例中,回授補償電路250包括一穩壓器252、一線性光耦合器254、一切換電晶體MS、一第四電容器C4、一第五電容器C5、一第一電阻器R1,以及一第二電阻器R2。In some embodiments, the
第一電阻器R1具有一第一端和一第二端,其中第一電阻器R1之第一端係耦接至第三節點N3以接收中間電位VE,而第一電阻器R1之第二端係耦接至一第七節點N7。第二電阻器R2具有一第一端和一第二端,其中第二電阻器R2之第一端係耦接至第七節點N7,而第二電阻器R2之第二端係耦接至接地電位VSS。第四電容器C4具有一第一端和一第二端,其中第四電容器C4之第一端係耦接至一第八節點N8,而第四電容器C4之第二端係耦接至第七節點N7。The first resistor R1 has a first terminal and a second terminal, wherein the first terminal of the first resistor R1 is coupled to the third node N3 to receive the intermediate potential VE, and the second terminal of the first resistor R1 It is coupled to a seventh node N7. The second resistor R2 has a first terminal and a second terminal, wherein the first terminal of the second resistor R2 is coupled to the seventh node N7, and the second terminal of the second resistor R2 is coupled to the ground. Potential VSS. The fourth capacitor C4 has a first terminal and a second terminal, wherein the first terminal of the fourth capacitor C4 is coupled to an eighth node N8, and the second terminal of the fourth capacitor C4 is coupled to the seventh node. N7.
在一些實施例中,穩壓器252係由一TL431電子元件來實施。穩壓器252具有一陽極、一陰極,以及一參考端,其中穩壓器252之陽極係耦接至接地電位VSS,穩壓器252之陰極係耦接至第八節點N8,而穩壓器252之參考端係耦接至第七節點N7。In some embodiments,
在一些實施例中,線性光耦合器254係由一PC817電子元件來實施。線性光耦合器254包括一發光二極體DL和一雙載子接面電晶體Q3(例如:NPN型)。發光二極體DL具有一陽極和一陰極,其中發光二極體DL之陽極係耦接至一第九節點N9,而發光二極體DL之陰極係耦接至第八節點N8。雙載子接面電晶體Q3具有一集極和一射極,其中雙載子接面電晶體Q3之集極係用於輸出回授電位VF至脈波寬度調變積體電路230,而雙載子接面電晶體Q3之射極係耦接至一第十節點N10。In some embodiments,
第五電容器C5具有一第一端和一第二端,其中第五電容器C5之第一端係耦接至第十節點N10,而第五電容器C5之第二端係耦接至接地電位VSS。例如,切換電晶體MS可為一N型金氧半場效電晶體。切換電晶體MS具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中切換電晶體MS之控制端係用於接收一控制電位VC,切換電晶體MS之第一端係耦接至第九節點N9,而切換電晶體MS之第二端係耦接至第三節點N3。在一些實施例中,脈波寬度調變積體電路230更可根據來自微控制器295之通知電位VN來決定第一時脈電位VA1和控制電位VC。The fifth capacitor C5 has a first terminal and a second terminal, wherein the first terminal of the fifth capacitor C5 is coupled to the tenth node N10 , and the second terminal of the fifth capacitor C5 is coupled to the ground potential VSS. For example, the switching transistor MS can be an N-type metal oxide semiconductor field effect transistor. The switching transistor MS has a control terminal (for example: a gate), a first terminal (for example: a source), and a second terminal (for example: a drain), wherein the control terminal of the switching transistor MS is For receiving a control potential VC, the first terminal of the switching transistor MS is coupled to the ninth node N9, and the second terminal of the switching transistor MS is coupled to the third node N3. In some embodiments, the pulse width modulation integrated
第3圖係顯示根據本發明一實施例所述之電源供應器200之電位波形圖。根據第3圖之量測結果,電源供應器200可操作於一第一階段T1或一第二階段T2兩者擇一,其操作原理可分別如下列所述。Figure 3 shows a potential waveform diagram of the
在第一階段T1期間,因為判斷輸出功率PW高於或等於臨界值PTH,所以微控制器295會輸出具有低邏輯位準之通知電位VN至脈波寬度調變積體電路230。回應於前述之通知電位VN,脈波寬度調變積體電路230可正常地輸出第一時脈電位VA1(例如:其具有65kHz之切換頻率),並可產生具有高邏輯位準之控制電位VC以致能回授補償電路250。此時,電源供應器200之功率因數校正器將會正常運作。During the first stage T1, because it is determined that the output power PW is higher than or equal to the threshold value PTH, the
在第二階段T2期間,因為判斷輸出功率PW低於臨界值PTH,所以微控制器295會輸出具有高邏輯位準之通知電位VN至脈波寬度調變積體電路230。回應於前述之通知電位VN,脈波寬度調變積體電路230可停止輸出第一時脈電位VA1(例如:其可維持於低邏輯位準)以禁能第一功率切換器220,並可產生具有低邏輯位準之控制電位VC以禁能回授補償電路250。此時,由於電源供應器200之功率因數校正器亦暫時停止運作,故電源供應器200之整體轉換效率將能夠大幅提升。During the second stage T2, because it is determined that the output power PW is lower than the threshold value PTH, the
本發明提出一種新穎之電源供應器,其可根據即時之輸出條件來自動調整其內部電路。根據實際量測結果,使用前述設計之電源供應器可有效改善整體之轉換效率,故其很適合應用於各種各式之裝置當中。The present invention proposes a novel power supply that can automatically adjust its internal circuit according to real-time output conditions. According to actual measurement results, using the power supply designed as mentioned above can effectively improve the overall conversion efficiency, so it is very suitable for use in various devices.
值得注意的是,以上所述之電位、電流、電阻值、電感值、電容值,以及其餘元件參數均非為本發明之限制條件。設計者可以根據不同需要調整這些設定值。本發明之電源供應器並不僅限於第1-3圖所圖示之狀態。本發明可以僅包括第1-3圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本發明之電源供應器當中。雖然本發明之實施例係使用金氧半場效電晶體為例,但本發明並不僅限於此,本技術領域人士可改用其他種類之電晶體,例如:接面場效電晶體,或是鰭式場效電晶體等等,而不致於影響本發明之效果。It is worth noting that the above-mentioned potential, current, resistance value, inductance value, capacitance value, and other component parameters are not limiting conditions of the present invention. Designers can adjust these settings according to different needs. The power supply of the present invention is not limited to the state shown in Figures 1-3. The present invention may only include any one or multiple features of any one or multiple embodiments of Figures 1-3. In other words, not all features shown in the figures need to be implemented in the power supply of the present invention at the same time. Although the embodiment of the present invention uses a metal oxide semi-field effect transistor as an example, the present invention is not limited thereto. Those skilled in the art can use other types of transistors, such as junction field effect transistors or fins. type field effect transistor, etc., without affecting the effect of the present invention.
在本說明書以及申請專利範圍中的序數,例如「第一」、「第二」、「第三」等等,彼此之間並沒有順序上的先後關係,其僅用於標示區分兩個具有相同名字之不同元件。The ordinal numbers in this specification and the scope of the patent application, such as "first", "second", "third", etc., have no sequential relationship with each other. They are only used to distinguish two items with the same Different components with names.
本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention is disclosed above in terms of preferred embodiments, they are not intended to limit the scope of the present invention. Anyone skilled in the art can make slight changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.
100,200:電源供應器100,200:Power supply
110,210:橋式整流器110,210: Bridge rectifier
120,220:第一功率切換器120,220: First power switcher
130,230:脈波寬度調變積體電路130,230: Pulse width modulation integrated circuit
140,240:第一輸出級電路140,240: First output stage circuit
150,250:回授補償電路150,250: Feedback compensation circuit
160,260:變壓器160,260:Transformer
161,261:主線圈161,261: Main coil
162,262:副線圈162,262: Secondary coil
163,263:輔助線圈163,263: Auxiliary coil
170,270:第二功率切換器170,270: Second power switch
180,280:第二輸出級電路180,280: Second output stage circuit
190,290:第三輸出級電路190,290: Third output stage circuit
195,295:微控制器195,295:Microcontroller
252:穩壓器252:Voltage regulator
254:線性光耦合器254:Linear Optocoupler
C1:第一電容器C1: first capacitor
C2:第二電容器C2: Second capacitor
C3:第三電容器C3: The third capacitor
C4:第四電容器C4: The fourth capacitor
C5:第五電容器C5: fifth capacitor
D1:第一二極體D1: first diode
D2:第二二極體D2: Second diode
D3:第三二極體D3: The third diode
D4:第四二極體D4: The fourth diode
D5:第五二極體D5: The fifth diode
D6:第六二極體D6: The sixth diode
D7:第七二極體D7: The seventh diode
DL:發光二極體DL: light emitting diode
IAV:平均電流IAV: average current
IOUT:輸出電流IOUT: output current
LU:升壓電感器LU: Boost inductor
LM:激磁電感器LM: Magnetizing inductor
M1:第一電晶體M1: the first transistor
M2:第二電晶體M2: Second transistor
MS:切換電晶體MS: switching transistor
N1:第一節點N1: first node
N2:第二節點N2: second node
N3:第三節點N3: The third node
N4:第四節點N4: fourth node
N5:第五節點N5: fifth node
N6:第六節點N6: The sixth node
N7:第七節點N7: The seventh node
N8:第八節點N8: The eighth node
N9:第九節點N9: Ninth node
N10:第十節點N10: tenth node
NCM:共同節點NCM: common node
NIN1:第一輸入節點NIN1: first input node
NIN2:第二輸入節點NIN2: second input node
NOUT:輸出節點NOUT: output node
NP:供應節點NP: supply node
NS:感測節點NS: sensing node
PW:輸出功率PW: output power
PTH:臨界值PTH: critical value
Q3:雙載子接面電晶體Q3: Bicarrier junction transistor
R1:第一電阻器R1: first resistor
R2:第二電阻器R2: second resistor
RS:感測電阻器RS: sensing resistor
T1:第一階段T1: first stage
T2:第一階段T2: first stage
VA1:第一時脈電位VA1: first clock potential
VA2:第二時脈電位VA2: second clock potential
VC:控制電位VC: control potential
VIN1:第一輸入電位VIN1: first input potential
VIN2:第二輸入電位VIN2: second input potential
VE:中間電位VE: intermediate potential
VF:回授電位VF: feedback potential
VN:通知電位VN: Notification potential
VOUT:輸出電位VOUT: output potential
VP:供應電位VP: supply potential
VR:整流電位VR: rectifier potential
VS:感測電位VS: sensing potential
VSS:接地電位VSS: ground potential
第1圖係顯示根據本發明一實施例所述之電源供應器之示意圖。 第2圖係顯示根據本發明一實施例所述之電源供應器之電路圖。 第3圖係顯示根據本發明一實施例所述之電源供應器之電位波形圖。 Figure 1 is a schematic diagram of a power supply according to an embodiment of the present invention. Figure 2 is a circuit diagram showing a power supply according to an embodiment of the present invention. Figure 3 shows a potential waveform diagram of a power supply according to an embodiment of the present invention.
100:電源供應器 100:Power supply
110:橋式整流器 110: Bridge rectifier
120:第一功率切換器 120:First power switcher
130:脈波寬度調變積體電路 130: Pulse width modulation integrated circuit
140:第一輸出級電路 140: First output stage circuit
150:回授補償電路 150:Feedback compensation circuit
160:變壓器 160:Transformer
161:主線圈 161: Main coil
162:副線圈 162: Secondary coil
163:輔助線圈 163: Auxiliary coil
170:第二功率切換器 170:Second power switcher
180:第二輸出級電路 180: Second output stage circuit
190:第三輸出級電路 190: The third output stage circuit
195:微控制器 195:Microcontroller
LU:升壓電感器 LU: Boost inductor
VA1:第一時脈電位 VA1: first clock potential
VA2:第二時脈電位 VA2: second clock potential
VIN1:第一輸入電位 VIN1: first input potential
VIN2:第二輸入電位 VIN2: second input potential
VE:中間電位 VE: intermediate potential
VF:回授電位 VF: feedback potential
VN:通知電位 VN: Notification potential
VOUT:輸出電位 VOUT: output potential
VP:供應電位 VP: supply potential
VR:整流電位 VR: rectifier potential
VS:感測電位 VS: sensing potential
VSS:接地電位 VSS: ground potential
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Citations (4)
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US20150280573A1 (en) * | 2014-04-01 | 2015-10-01 | Infineon Technologies Austria Ag | System and Method for a Switched-Mode Power Supply |
CN110690823A (en) * | 2018-07-04 | 2020-01-14 | 立锜科技股份有限公司 | Switching power supply and power switch control circuit thereof |
CN113726175A (en) * | 2021-07-30 | 2021-11-30 | 艾科微电子(深圳)有限公司 | Conversion device, controller and power supply control method thereof |
TW202226737A (en) * | 2020-12-25 | 2022-07-01 | 宏碁股份有限公司 | Power supply device with heat dissipation mechanism |
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US20150280573A1 (en) * | 2014-04-01 | 2015-10-01 | Infineon Technologies Austria Ag | System and Method for a Switched-Mode Power Supply |
CN110690823A (en) * | 2018-07-04 | 2020-01-14 | 立锜科技股份有限公司 | Switching power supply and power switch control circuit thereof |
TW202226737A (en) * | 2020-12-25 | 2022-07-01 | 宏碁股份有限公司 | Power supply device with heat dissipation mechanism |
CN113726175A (en) * | 2021-07-30 | 2021-11-30 | 艾科微电子(深圳)有限公司 | Conversion device, controller and power supply control method thereof |
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