TWI825543B - Gas nozzle with controllable air flow distribution - Google Patents

Gas nozzle with controllable air flow distribution Download PDF

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TWI825543B
TWI825543B TW110149671A TW110149671A TWI825543B TW I825543 B TWI825543 B TW I825543B TW 110149671 A TW110149671 A TW 110149671A TW 110149671 A TW110149671 A TW 110149671A TW I825543 B TWI825543 B TW I825543B
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layer panel
gas nozzle
rotate
layer
panel
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TW110149671A
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TW202227192A (en
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劉鎮頡
柳雪
柴智
祁廣杰
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中國大陸商拓荆科技股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45568Porous nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/005Nozzles or other outlets specially adapted for discharging one or more gases
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • B05B1/16Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening having selectively- effective outlets
    • B05B1/1627Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening having selectively- effective outlets with a selecting mechanism comprising a gate valve, a sliding valve or a cock
    • B05B1/1636Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening having selectively- effective outlets with a selecting mechanism comprising a gate valve, a sliding valve or a cock by relative rotative movement of the valve elements
    • B05B1/1645Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening having selectively- effective outlets with a selecting mechanism comprising a gate valve, a sliding valve or a cock by relative rotative movement of the valve elements the outlets being rotated during selection
    • B05B1/1654Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening having selectively- effective outlets with a selecting mechanism comprising a gate valve, a sliding valve or a cock by relative rotative movement of the valve elements the outlets being rotated during selection about an axis parallel to the liquid passage in the stationary valve element
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587Mechanical means for changing the gas flow
    • C23C16/45589Movable means, e.g. fans
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

一種可控氣流分佈之氣體噴頭,其設置於薄膜沈積裝置之腔體內,且包括:第一層面板,其具有多個按第一規律分佈之第一氣體供給孔;第二層面板,其座靠於第一層面板上,且具有多個按第二規律分佈之第二氣體供給孔。其中第一規律不同於第二規律,且第一層面板及第二層面板中的一者能夠相對於另一者旋轉至少一定角度,使得二者可相對於彼此具有不同的第一位置及第二位置。在第一位置,所有的第一氣體供給孔均未被第二層面板遮蓋;在第二位置,第一氣體供給孔中的一部分與各別第二氣體供給孔對準,另一部分被第二層面板遮蓋。A gas nozzle with controllable gas flow distribution, which is installed in the cavity of a thin film deposition device and includes: a first layer panel with a plurality of first gas supply holes distributed according to a first rule; a second layer panel with a seat It is adjacent to the first layer panel and has a plurality of second gas supply holes distributed according to a second regular pattern. The first law is different from the second law, and one of the first layer panel and the second layer panel can rotate at least a certain angle relative to the other, so that the two can have different first positions and third layers relative to each other. Two positions. In the first position, all the first gas supply holes are not covered by the second layer panel; in the second position, part of the first gas supply holes are aligned with the respective second gas supply holes, and the other part is covered by the second layer panel. Floor panel covering.

Description

可控氣流分佈之氣體噴頭Gas nozzle with controllable air flow distribution

本申請案大體上係關於半導體晶圓、基板處理領域,尤其係關於用於在半導體處理腔室中向晶圓或基板噴射氣體之氣體噴頭。The present application relates generally to the field of semiconductor wafer and substrate processing, and more particularly to a gas nozzle for injecting gas onto a wafer or substrate in a semiconductor processing chamber.

晶圓或基板為用於製備半導體裝置之基底。為了製備半導體裝置(例如積體電路、半導體發光裝置等),需要將晶圓或基板置放於半導體處理腔室中進行加熱及沈積處理(例如,化學氣相沈積(CVD)、電漿增強化學氣相沈積(PECVD)等),以在晶圓或基板之表面沈積薄膜。為了在晶圓之表面進行薄膜沈積,需要利用位於半導體處理腔室內之氣體噴頭向晶圓表面噴射源氣體及反應氣體。A wafer or substrate is the base used for fabricating semiconductor devices. In order to prepare semiconductor devices (such as integrated circuits, semiconductor light-emitting devices, etc.), wafers or substrates need to be placed in a semiconductor processing chamber for heating and deposition processes (such as chemical vapor deposition (CVD), plasma enhanced chemistry, etc.) Vapor deposition (PECVD, etc.) to deposit thin films on the surface of wafers or substrates. In order to deposit a thin film on the surface of a wafer, a gas nozzle located in a semiconductor processing chamber needs to be used to spray source gas and reaction gas onto the wafer surface.

在先前技術之薄膜沈積裝置中,用於噴射源氣體及反應氣體之氣體噴頭的通孔之數目及分佈均為固定的,無法進行調節。此種氣體噴頭存在之缺點為:一方面,無法滿足不同薄膜沈積製程中的不同噴射需求(例如,不同噴射速度、噴射流量等)。隨著半導體器件之發展,所需要之薄膜沈積製程愈加多樣化,而相應地亦有各種不同的噴射需求。先前技術中的此種噴頭限制了其自身乃至整個薄膜沈積裝置之應用範圍。另一方面,此種氣體噴頭由於無法調節通孔之分佈,因而不利於提高沈積之薄膜之均勻性。特定言之,新開發之薄膜製程中對於薄膜均勻性要求愈加變高,而開發大量新製程之模擬及實驗過程需要相當大的成本。先前技術之噴頭之結構在發展新薄膜沈積製程中存在限制。In the thin film deposition apparatus of the prior art, the number and distribution of the through holes of the gas nozzle for injecting the source gas and the reaction gas are fixed and cannot be adjusted. The disadvantages of this kind of gas nozzle are: on the one hand, it cannot meet the different injection requirements (for example, different injection speeds, injection flow rates, etc.) in different thin film deposition processes. With the development of semiconductor devices, the required thin film deposition processes have become increasingly diversified, and accordingly there are various jetting requirements. This type of nozzle in the prior art limits the application scope of itself and even the entire thin film deposition device. On the other hand, this type of gas nozzle cannot adjust the distribution of through holes, so it is not conducive to improving the uniformity of the deposited film. Specifically, the requirements for thin film uniformity in newly developed thin film processes are becoming increasingly high, and developing a large number of simulation and experimental processes for new processes requires considerable costs. The structure of prior art nozzles has limitations in developing new thin film deposition processes.

因此,有必要對先前技術中的噴頭進行改良,以解決上述技術問題。Therefore, it is necessary to improve the nozzles in the prior art to solve the above technical problems.

本申請案之目的旨在至少解決上述先前技術中的問題之一,從而提供一種可控氣流分佈之氣體噴頭:其可以調節氣流分佈及氣流量,不僅有助於滿足不同薄膜沈積製程之噴射需要,而且亦有助於提高沈積之薄膜之均勻性,因而適合於開發新薄膜沈積製程,降低新薄膜沈積製程之成本。The purpose of this application is to solve at least one of the problems in the above-mentioned prior art, thereby providing a gas nozzle with controllable gas flow distribution: it can adjust the gas flow distribution and gas flow rate, which not only helps to meet the spraying needs of different thin film deposition processes , and also helps to improve the uniformity of the deposited thin film, so it is suitable for developing new thin film deposition processes and reducing the cost of new thin film deposition processes.

根據本申請案之一個實施例所提供之可控氣流分佈之氣體噴頭,其設置於薄膜沈積裝置之腔體內,且包括:第一層面板,其具有多個按第一規律分佈之第一氣體供給孔;第二層面板,其座靠於所述第一層面板上,且具有多個按第二規律分佈之第二氣體供給孔。其中:所述第一規律不同於所述第二規律,且所述第一層面板及所述第二層面板中的一者能夠相對於另一者旋轉至少一定角度,使得二者可相對於彼此具有不同的第一位置及第二位置;且其中,在所述第一位置,所有的所述第一氣體供給孔均未被所述第二層面板遮蓋;在所述第二位置,所述第一氣體供給孔中的一部分與相應的所述第二氣體供給孔對準,另一部分被所述第二層面板遮蓋。According to an embodiment of the present application, a gas nozzle with controllable gas flow distribution is provided in a cavity of a thin film deposition device, and includes: a first layer panel with a plurality of first gases distributed according to a first rule. Supply holes; a second layer panel, which is seated against the first layer panel and has a plurality of second gas supply holes distributed according to a second regularity. Wherein: the first rule is different from the second rule, and one of the first layer panel and the second layer panel can rotate at least a certain angle relative to the other, so that the two can rotate relative to the other. have different first and second positions; and wherein, in the first position, all the first gas supply holes are not covered by the second layer panel; in the second position, all the first gas supply holes are not covered by the second layer panel; A part of the first gas supply holes is aligned with the corresponding second gas supply hole, and another part is covered by the second layer panel.

較佳地,在上述實施例中,所述第一層面板固定不動,所述第二層面板可由第一旋轉裝置驅動旋轉至少一定角度。例如,所述第二層面板能夠相對於所述第一層面板旋轉3°至10°。Preferably, in the above embodiment, the first layer panel is fixed, and the second layer panel can be driven to rotate by at least a certain angle by the first rotating device. For example, the second layer panel can be rotated by 3° to 10° relative to the first layer panel.

作為上述實施例之一種實施,所述第一旋轉裝置鄰近所述第二層面板之邊緣,且包括可被驅動旋轉之旋轉柱及與所述旋轉柱固定連接或一體成形之控制柱;所述第二層面板上成形有與所述控制柱配合之長形槽,從而當所述旋轉柱被驅動旋轉時,與所述長形槽配合之控制柱帶動所述第二層面板旋轉。As an implementation of the above embodiment, the first rotating device is adjacent to the edge of the second layer panel and includes a rotating column that can be driven to rotate and a control column that is fixedly connected to or integrally formed with the rotating column; The second layer panel is formed with an elongated slot that cooperates with the control column, so that when the rotating column is driven to rotate, the control column that cooperates with the elongated slot drives the second layer panel to rotate.

較佳地,所述第二層面板具有由其邊緣向外延伸之凸耳,所述長形槽形成於所述凸耳中。Preferably, the second layer panel has lugs extending outward from its edge, and the elongated groove is formed in the lugs.

較佳地,所述第一層面板亦具有由其邊緣向上延伸之環形周壁,所述環形周壁內側成形有向內開口之第一凹口,所述旋轉柱、所述控制柱及所述凸耳均位於所述第一凹口內。Preferably, the first layer panel also has an annular peripheral wall extending upward from its edge, and a first recess that opens inward is formed on the inside of the annular peripheral wall. The rotating column, the control column and the convex The ears are located in the first notch.

較佳地,所述第一凹口之寬度大於所述凸耳之寬度,從而使得所述第二層面板能夠相對於所述第一層面板旋轉3°至5°。Preferably, the width of the first notch is greater than the width of the lug, so that the second layer panel can rotate 3° to 5° relative to the first layer panel.

作為上述實施例之一種實施方式,所述第一旋轉裝置鄰近所述第二層面板之邊緣,且包括齒輪;所述第二層面板之邊緣具有與所述齒輪嚙合之多個齒,從而當所述齒輪被驅動旋轉時,藉由所述齒帶動所述第二層面板旋轉。As an implementation of the above embodiment, the first rotating device is adjacent to the edge of the second layer panel and includes a gear; the edge of the second layer panel has a plurality of teeth meshing with the gear, so that when When the gear is driven to rotate, the teeth drive the second layer panel to rotate.

較佳地,所述第一層面板之上表面上形成有多處波浪狀之凹凸部,所述第二層面板上相應地設有能夠在所述凹凸部滾動之滾輪,從而當所述第一層面板與所述第二層面板相對於彼此旋轉時,所述滾輪在所述凹凸部滾動。Preferably, a plurality of wavy concave and convex parts are formed on the upper surface of the first layer panel, and the second layer panel is correspondingly provided with rollers that can roll on the concave and convex parts, so that when the third layer is When the first layer of panels and the second layer of panels rotate relative to each other, the rollers roll on the concave and convex portions.

較佳地,當所述第一層面板及所述第二層面板相對於彼此位於所述第一位置及第二位置時,所述滾輪位於所述凹凸部之兩個不同波谷,此時所述第二層面板之下表面與所述第一層面板之上表面貼合。Preferably, when the first layer panel and the second layer panel are located in the first position and the second position relative to each other, the roller is located in two different valleys of the concave and convex portion. The lower surface of the second layer panel is attached to the upper surface of the first layer panel.

作為一種較佳實施方式,上述氣體噴頭亦包括座靠於所述第二層面板上之第三層面板,所述第三層面板具有多個按第三規律分佈之第三氣體供給孔,所述第三規律不同於所述第一規律及所述第二規律。As a preferred embodiment, the above-mentioned gas nozzle also includes a third layer panel seated against the second layer panel, and the third layer panel has a plurality of third gas supply holes distributed according to a third rule. The third law is different from the first law and the second law.

較佳地,所述第三層面板能夠由第二旋轉裝置驅動旋轉至少一定角度。例如,所述第三層面板能夠相對於所述第一層面板旋轉3°至10°。Preferably, the third layer panel can be driven to rotate by at least a certain angle by the second rotation device. For example, the third layer panel can be rotated by 3° to 10° relative to the first layer panel.

在一個實施例中,所述第二旋轉裝置鄰近所述第三層面板之邊緣,且包括可被驅動旋轉之旋轉柱及與所述旋轉柱固定連接或一體成形之控制柱;所述第三層面板上成形有與所述控制柱配合之長形槽,從而當所述旋轉柱被驅動旋轉時,與所述長形槽配合之控制柱帶動所述第三層面板旋轉。In one embodiment, the second rotating device is adjacent to the edge of the third layer panel and includes a rotating column that can be driven to rotate and a control column that is fixedly connected to or integrally formed with the rotating column; the third rotating device An elongated slot that cooperates with the control column is formed on the layer panel, so that when the rotating column is driven to rotate, the control column that cooperates with the elongated slot drives the third layer panel to rotate.

在上述實施例中,所述第三層面板具有由其邊緣向外延伸之凸耳,所述長形槽形成於所述凸耳中。In the above embodiment, the third layer panel has lugs extending outward from its edge, and the elongated groove is formed in the lugs.

較佳地,所述第一層面板亦具有由其邊緣向上延伸之環形周壁,所述環形周壁內側成形有向內開口之第二凹口,所述旋轉柱、所述控制柱及所述凸耳均位於所述第二凹口內。Preferably, the first layer panel also has an annular peripheral wall extending upward from its edge, and a second recess that opens inward is formed on the inside of the annular peripheral wall. The rotating column, the control column and the convex The ears are located in the second notch.

較佳地,所述第二凹口之寬度大於所述凸耳之寬度,從而使得所述第三層面板能夠相對於所述第一層面板旋轉3°至5°。Preferably, the width of the second notch is greater than the width of the lug, so that the third layer panel can rotate 3° to 5° relative to the first layer panel.

在另一實施例,所述第二旋轉裝置鄰近所述第三層面板之邊緣,且包括齒輪;所述第三層面板之邊緣具有與所述齒輪嚙合之多個齒,從而當所述齒輪被驅動旋轉時,藉由所述齒帶動所述第三層面板旋轉。In another embodiment, the second rotating device is adjacent to an edge of the third layer panel and includes a gear; the edge of the third layer panel has a plurality of teeth meshing with the gear, so that when the gear When driven to rotate, the teeth drive the third layer panel to rotate.

較佳地,所述第三層面板之下表面上形成有多處波浪狀之凹凸部,所述第二層面板上相應地設有能夠在所述凹凸部滾動之滾輪,從而當所述第三層面板相對於所述第二層面板旋轉時,所述滾輪在所述凹凸部滾動。Preferably, a plurality of wavy concave and convex portions are formed on the lower surface of the third layer panel, and the second layer panel is correspondingly provided with rollers that can roll on the concave and convex portions, so that when the third layer panel When the three-layer panel rotates relative to the second layer panel, the roller rolls on the concave and convex portion.

在上述實施例中,所述凹凸部具有至少兩個不同波谷,且當所述滾輪位於所述凹凸部之波谷中時,所述第三層面板之下表面與所述第二層面板之上表面貼合在一起。In the above embodiment, the concave-convex portion has at least two different troughs, and when the roller is located in the trough of the concave-convex portion, the lower surface of the third layer panel and the upper surface of the second layer panel The surfaces fit together.

較佳地,所述第一層面板、所述第二層面板及所述第三層面板均為大體圓盤狀,且三者同心地設置。Preferably, the first layer panel, the second layer panel and the third layer panel are all generally disk-shaped, and the three are arranged concentrically.

較佳地,所述第一層面板亦具有由其邊緣向上延伸之環形周壁,從而在所述第一層面板之中部形成凹腔,所述第二層面板及所述第三層面板均位於所述凹腔內。Preferably, the first layer panel also has an annular peripheral wall extending upward from its edge, thereby forming a cavity in the middle of the first layer panel, and the second layer panel and the third layer panel are both located inside the cavity.

較佳地,所述環形周壁之內側設有多個滾柱,所述多個滾柱突出於所述環形周壁之內表面,且與所述第二層面板及所述第三層面板之邊緣貼合,從而為其提供定位。Preferably, a plurality of rollers are provided inside the annular peripheral wall, and the plurality of rollers protrude from the inner surface of the annular peripheral wall and are in contact with the edges of the second layer panel and the third layer panel. fit to provide positioning.

根據本申請案所提供之可控氣流分佈之氣體噴頭能夠產生如下極佳技術效果:The gas nozzle with controllable airflow distribution provided by this application can produce the following excellent technical effects:

由於該氣體噴頭包括兩層以上可相對於彼此旋轉之面板,且各層面板上之通孔以不同的規律分佈,因此,可藉由將各層面板旋轉至相對於彼此不同的位置,使得各層面板上之孔形成不同的組合(例如,在某個位置,最下層面板(即靠近晶圓之面板)上之所有孔均處於貫通狀態(即,未被遮擋),而在另一位置,最下層面板上之部分通孔被遮擋,只有其餘通孔處於貫通狀態)。Since the gas nozzle includes more than two layers of panels that can rotate relative to each other, and the through holes on each layer panel are distributed in different patterns, the panels on each layer can be rotated to different positions relative to each other. The holes form different combinations (for example, at a certain position, all the holes on the bottom panel (i.e., the panel close to the wafer) are in a through state (i.e., not blocked), and at another position, the bottom panel Some of the through holes above are blocked, and only the remaining through holes are open).

因此,當各層面板位於相對於彼此不同的位置時,不同通孔處於貫通狀態。藉此,該氣體噴頭可以調節氣流分佈及氣流量,不僅有助於滿足不同薄膜沈積製程之噴射需要,而且亦有助於提高沈積之薄膜之均勻性,因而適合於開發新薄膜沈積製程,降低新薄膜沈積製程之研發成本。Therefore, when each layer of panels is in a different position relative to each other, different through holes are in a penetrating state. In this way, the gas nozzle can adjust the gas flow distribution and gas flow rate, which not only helps to meet the spraying needs of different thin film deposition processes, but also helps to improve the uniformity of the deposited thin films, and is therefore suitable for the development of new thin film deposition processes and reduces the cost of Research and development costs for new thin film deposition processes.

下面結合附圖具體描述本申請案之實施例。藉由參考附圖來閱讀關於下面具體實施例之描述,更容易理解本申請案之各個態樣。需要說明,此等實施例僅僅為例示性的,其僅用於解釋、說明本申請案之技術方案,而並非對本申請案之限制。熟習此項技術者在此等實施例之基礎上,可以作出各種變型及變換(例如設置三層以上之面板),所有以等同方式變換獲得之技術方案均屬於本申請案之保護範圍。本說明書中所使用之各種部件之名稱僅出於說明之目的,並不具備限定作用,不同廠商可能使用不同名稱來指代具備相同功能之部件。The embodiments of the present application will be described in detail below with reference to the accompanying drawings. It is easier to understand various aspects of the present application by reading the description of the following specific embodiments with reference to the accompanying drawings. It should be noted that these embodiments are only illustrative, and are only used to explain and illustrate the technical solution of the present application, but are not intended to limit the present application. Those skilled in the art can make various modifications and transformations (such as providing three or more layers of panels) on the basis of these embodiments. All technical solutions obtained by equivalent transformations fall within the scope of protection of this application. The names of various components used in this manual are for illustrative purposes only and do not have a limiting effect. Different manufacturers may use different names to refer to components with the same function.

圖1為採用本申請案一種實施例之氣體噴頭之基板處理室的橫截面示意圖。參考圖1,根據本申請案所提供之可控氣流分佈之氣體噴頭10,其設置於薄膜沈積裝置之腔體100 (即基板處理室)內,用於對置放於晶圓或基板承載装置50上之晶圓或基板噴射氣體,以進行薄膜沈積。1 is a schematic cross-sectional view of a substrate processing chamber using a gas shower head according to an embodiment of the present application. Referring to Figure 1, the gas nozzle 10 with controllable gas flow distribution provided by the present application is installed in the cavity 100 of the thin film deposition device (i.e., the substrate processing chamber), and is used to be placed opposite the wafer or substrate carrier device. Gas is sprayed onto the wafer or substrate 50 for thin film deposition.

與先前技術不同,本申請案氣體噴頭10包括多層面板,例如圖1中的第一層面板1及座靠於第一層面板1上之第二層面板2,且每層面板上之通孔按不同規律(即具有不同的佈局及/或數目)。例如,第一層面板1具有多個按第一規律分佈之第一氣體供給孔11;第二層面板2具有多個按第二規律分佈之第二氣體供給孔21,第一規律不同於第二規律。之所以需要不同的規律,係因為若第一層面板1與第二層面板2上之氣體供給孔11、21之分佈規律完全相同(即,具有相同之佈局及相同之數目),則會導致第一層面板1 (即靠近被噴氣之晶圓之面板)上之所有的氣體供給孔11要麼被完全遮蓋,要麼完全貫通,在此種情況下無法起到調節作用。Different from the prior art, the gas nozzle 10 of the present application includes multiple layers of panels, such as the first layer panel 1 in Figure 1 and the second layer panel 2 seated on the first layer panel 1, and through holes on each layer panel. According to different rules (i.e. with different layouts and/or numbers). For example, the first layer panel 1 has a plurality of first gas supply holes 11 distributed according to a first pattern; the second layer panel 2 has a plurality of second gas supply holes 21 distributed according to a second pattern. The first pattern is different from the first pattern. Two rules. The reason why different rules are needed is because if the distribution rules of the gas supply holes 11 and 21 on the first layer panel 1 and the second layer panel 2 are exactly the same (that is, have the same layout and the same number), it will lead to All the gas supply holes 11 on the first layer panel 1 (that is, the panel close to the wafer being ejected) are either completely covered or completely penetrated, and in this case cannot play a regulating role.

另外,在本申請案中,第一層面板1及第二層面板2中的一者能夠相對於另一者旋轉至少一定角度,使得二者可相對於彼此具有不同的第一位置及第二位置。其中:在第一位置(例如原始位置),所有的第一氣體供給孔11均未被第二層面板2遮蓋(類似於圖5A至圖5D所示的位置,詳見下述),此時所有的第一氣體供給孔11均可用於噴射氣體,因而能夠根據最大之噴射量來噴射氣體;在第二位置(例如旋轉後之位置),第一氣體供給孔11中的一部分與相應的第二氣體供給孔21對準,另一部分被第二層面板2遮蓋(類似於圖6A至圖6C所示的位置,詳見下述),此時只有未被遮蓋之氣體噴射孔11能夠用於噴射氣體,顯然噴射量少於第一位置,並且只有此等氣體噴射孔11所對應之位置被噴射氣體。因而可以起到調節噴射量及氣流分佈之作用。在一些實施例中,相鄰面板上之通孔可具有不同規律(即具有不同的佈局及/或數目),而不相鄰面板上之通孔可具有相同規律(即具有相同之佈局及/或數目),藉由每層面版之相對旋轉,亦可以起到調節噴射量及氣流分佈之作用。In addition, in this application, one of the first layer panel 1 and the second layer panel 2 can rotate at least a certain angle relative to the other, so that the two can have different first positions and second positions relative to each other. Location. Wherein: in the first position (such as the original position), all the first gas supply holes 11 are not covered by the second layer panel 2 (similar to the positions shown in FIGS. 5A to 5D , see below for details). All the first gas supply holes 11 can be used to inject gas, and thus can inject gas according to the maximum injection volume; in the second position (for example, the position after rotation), a part of the first gas supply holes 11 is in contact with the corresponding third position. The two gas supply holes 21 are aligned, and the other part is covered by the second layer panel 2 (similar to the position shown in Figure 6A to Figure 6C, see details below). At this time, only the uncovered gas injection hole 11 can be used. The amount of gas injected is obviously less than that at the first position, and only the positions corresponding to the gas injection holes 11 are injected with gas. Therefore, it can adjust the injection volume and airflow distribution. In some embodiments, the vias on adjacent panels may have different patterns (i.e., have different layouts and/or numbers), while the vias on non-adjacent panels may have the same pattern (i.e., have the same layout and/or number). or number), through the relative rotation of each layer, the injection volume and airflow distribution can also be adjusted.

由此可見,本申請案之此種全新發明構思所產生之技術方案能帶來如下有益之技術效果:藉由改變氣體噴頭之孔分佈來控制氣流分佈,解決新製程開發過程成本高之問題,且藉由氣流量補償功能對同一種製程之薄膜均勻性進行優化。很顯然,此種可自動調節氣流分佈之氣體噴頭,提供了製程調整之靈活性,改善薄膜均勻性,節省製程開發成本。It can be seen that the technical solution generated by the new inventive concept of the present application can bring the following beneficial technical effects: by changing the hole distribution of the gas nozzle to control the gas flow distribution, solving the problem of high cost of new process development process, And through the air flow compensation function, the film uniformity of the same process is optimized. Obviously, this kind of gas nozzle that can automatically adjust the air flow distribution provides flexibility in process adjustment, improves film uniformity, and saves process development costs.

根據本申請案一種較佳實施例所提供之氣體噴頭包括三層面板:第一層面板1、第二層面板2、第三層面板3 (如圖5A至圖5C及圖6A至圖6C所示)。第二層面板2座靠於第一層面板1上,第三層面板3座靠於第二層面板2上。其中,第一層面板1固定不定,第二層面板2及第三層面板3可分別由旋轉裝置驅動旋轉。例如,第二層面板2、第三層面板3均能夠相對於第一層面板1旋轉3°至10°、3°至8°或3°至5°。具體旋轉之度數可由熟習此項技術者根據面板之數目、面板上氣體供給孔之分佈、氣體噴射之需要等多態樣之因素來確定。The gas nozzle provided according to a preferred embodiment of the present application includes three layers of panels: a first layer panel 1, a second layer panel 2, and a third layer panel 3 (as shown in Figures 5A to 5C and 6A to 6C Show). The second layer panel 2 is seated against the first layer panel 1, and the third layer panel 3 is seated against the second layer panel 2. Among them, the first layer panel 1 is fixed, and the second layer panel 2 and the third layer panel 3 can be driven and rotated by the rotating device respectively. For example, both the second layer panel 2 and the third layer panel 3 can be rotated by 3° to 10°, 3° to 8°, or 3° to 5° relative to the first layer panel 1 . The specific degree of rotation can be determined by those skilled in the art based on various factors such as the number of panels, the distribution of gas supply holes on the panels, and the need for gas injection.

參考圖2A至圖2C,其展示上述較佳實施中的氣體噴頭之第一層面板1之結構,其中圖2A為該第一層面板1之立體示意圖,圖2B為圖2A所示的第一層面板1之俯視示意圖。第一層面板1為大體圓盤狀,中間部分形成有多個按一定規律分佈之第一氣體供給孔11,且中間部分靠近邊緣處形成有多處波浪狀之凹凸部14。第一層面板1之邊緣具有向上延伸之環形周壁12,從而在第一層面板1之中部形成凹腔16,以使得第二層面板2及第三層面板3均可容納於凹腔16內。環形周壁12內側成形有向內開口之第一凹口13、第二凹口15,以分別用於容納驅動第二層面板2及第三層面板3旋轉之旋轉裝置(詳見下述)。圖2C為圖2B之A-A剖視放大圖,其展示第一層面板1之橫截面結構。Referring to FIGS. 2A to 2C , the structure of the first layer panel 1 of the gas nozzle in the above preferred embodiment is shown. FIG. 2A is a schematic perspective view of the first layer panel 1 , and FIG. 2B is the first layer panel shown in FIG. 2A . Top view of layer panel 1. The first layer panel 1 is generally disk-shaped, with a plurality of first gas supply holes 11 distributed in a certain pattern in the middle portion, and a plurality of wavy concave and convex portions 14 formed near the edge of the middle portion. The edge of the first layer panel 1 has an annular peripheral wall 12 extending upward, thereby forming a cavity 16 in the middle of the first layer panel 1 so that both the second layer panel 2 and the third layer panel 3 can be accommodated in the cavity 16 . A first recess 13 and a second recess 15 opening inwardly are formed on the inner side of the annular peripheral wall 12 to respectively accommodate the rotating devices that drive the rotation of the second layer panel 2 and the third layer panel 3 (see details below). FIG. 2C is an enlarged view of the A-A cross-section in FIG. 2B , which shows the cross-sectional structure of the first layer panel 1 .

參考圖3A至圖3C,其展示上述較佳實施中的氣體噴頭之第二層面板2之結構。第二層面板2座靠於第一層面板1上,其亦為大體圓盤狀,中間部分有開口24,且多個第二氣體供給孔21按一定規律分佈形成在第二層面板2中,其分佈規律不同於第一層面板1上氣體供給孔11之分佈規律。第二層面板2亦具有由其邊緣向外延伸之凸耳23,凸耳23中形成有長形槽22,以供與驅動其旋轉之旋轉裝置配合。Referring to FIGS. 3A to 3C , the structure of the second layer panel 2 of the gas nozzle in the above preferred embodiment is shown. The second layer panel 2 is seated against the first layer panel 1. It is also generally disk-shaped, with an opening 24 in the middle part, and a plurality of second gas supply holes 21 are formed in the second layer panel 2 according to a certain regular distribution. , and its distribution pattern is different from the distribution pattern of the gas supply holes 11 on the first layer panel 1 . The second layer panel 2 also has lugs 23 extending outward from its edge. Elongated slots 22 are formed in the lugs 23 for cooperation with the rotating device that drives the rotation.

如圖3A至圖3C所示,第二層面板2上接近邊緣位置處亦設有能夠在第一層面板1之凹凸部14滾動之滾輪25,從而當第一層面板1與第二層面板2相對於彼此旋轉時,滾輪25在凹凸部14滾動。該結構能夠有效減少甚至消除第一層面板1與第二層面板2在相對於彼此旋轉時之直接摩擦,有助於減小二者之磨損。As shown in FIGS. 3A to 3C , the second layer panel 2 is also provided with rollers 25 close to the edge that can roll on the concave and convex portions 14 of the first layer panel 1 , so that when the first layer panel 1 and the second layer panel 2 rotate relative to each other, the roller 25 rolls on the concave and convex portion 14. This structure can effectively reduce or even eliminate the direct friction between the first layer panel 1 and the second layer panel 2 when they rotate relative to each other, helping to reduce the wear of both.

參考圖4A至圖4D,其展示上述較佳實施中的氣體噴頭之第三層面板3之結構。第三層面板3座靠於第二層面板2上,亦為大體圓盤狀,中間部分有開口34,且多個第三氣體供給孔31按一定規律分佈形成在第三層面板3中,其分佈規律不同於第一、第二層面板1、2上氣體供給孔11、21之分佈規律。第三層面板3亦具有由其邊緣向外延伸之凸耳33,凸耳33中形成有長形槽32,以供與驅動其旋轉之旋轉裝置配合。Referring to FIGS. 4A to 4D , the structure of the third layer panel 3 of the gas nozzle in the above preferred embodiment is shown. The third layer panel 3 is seated against the second layer panel 2 and is also generally disk-shaped. There is an opening 34 in the middle part, and a plurality of third gas supply holes 31 are formed in the third layer panel 3 according to a certain regular distribution. The distribution pattern is different from the distribution pattern of the gas supply holes 11 and 21 on the first and second layer panels 1 and 2. The third layer panel 3 also has lugs 33 extending outward from its edge. Elongated slots 32 are formed in the lugs 33 for cooperation with the rotating device that drives the rotation.

參考圖4C至圖4D,第三層面板3之下表面上形成有多處波浪狀之凹凸部35,該凹凸部35能夠與滾輪25相配合。從而當第三層面板3與第二層面板2相對於彼此旋轉時,滾輪25在凹凸部35滾動。該結構能夠有效減少甚至消除第三層面板3與第二層面板2在相對於彼此旋轉時之直接摩擦,有助於減小二者之磨損。Referring to FIGS. 4C to 4D , a plurality of wavy concave and convex portions 35 are formed on the lower surface of the third layer panel 3 , and the concave and convex portions 35 can cooperate with the rollers 25 . Therefore, when the third layer panel 3 and the second layer panel 2 rotate relative to each other, the roller 25 rolls on the concave and convex portion 35 . This structure can effectively reduce or even eliminate the direct friction between the third layer panel 3 and the second layer panel 2 when they rotate relative to each other, helping to reduce the wear of both.

下面具體說明上述較佳實施中的氣體噴頭之總體結構及工作過程及原理。The overall structure, working process and principle of the gas nozzle in the above preferred embodiment will be described in detail below.

圖5A至圖5D、圖6A至圖6D、圖7A至圖7D展示本申請案氣體噴頭整體之示意圖。首先參考圖5A,其展示該氣體噴頭之總體結構。如圖5A中所示,該氣體噴頭包括依次層疊且大體上同心設置之第一、第二、第三層面板1、2、3,其中第二、第三層面板2、3位於第一層面板1之環形周壁12形成之凹腔16中。在該實施例中,第一層面板1固定不動。第二、第三層面板2、3可旋轉至少一定角度。Figures 5A to 5D, Figures 6A to 6D, and Figures 7A to 7D show schematic diagrams of the entire gas nozzle of the present application. Referring first to Figure 5A, which shows the overall structure of the gas shower head. As shown in Figure 5A, the gas nozzle includes first, second, and third layers of panels 1, 2, and 3 that are stacked in sequence and substantially concentrically arranged, wherein the second and third layers of panels 2 and 3 are located on the first layer. In the cavity 16 formed by the annular peripheral wall 12 of the panel 1 . In this embodiment, the first layer panel 1 is stationary. The second and third layer panels 2 and 3 can rotate at least a certain angle.

其中,第二層面板2可由第一旋轉裝置20驅動旋轉。第一旋轉裝置20鄰近第二層面板2之邊緣,且包括可被驅動旋轉之旋轉柱201及與旋轉柱201固定連接或一體成形之控制柱202;如前所述,第二層面板2上成形有與控制柱202配合之長形槽22,從而當旋轉柱201被驅動旋轉時,與長形槽22配合之控制柱202帶動第二層面板2旋轉。如前所述,長形槽22形成於凸耳23中。其中,旋轉柱201、控制柱202及凸耳23均位於第一凹口13內。第一凹口13之寬度大於凸耳23之寬度,從而使得第二層面板2能夠相對於第一層面板1旋轉3°至5°。The second layer panel 2 can be driven and rotated by the first rotating device 20 . The first rotating device 20 is adjacent to the edge of the second layer panel 2 and includes a rotating column 201 that can be driven to rotate and a control column 202 fixedly connected to or integrally formed with the rotating column 201; as mentioned above, on the second layer panel 2 An elongated slot 22 that cooperates with the control column 202 is formed, so that when the rotating column 201 is driven to rotate, the control column 202 that cooperates with the elongated slot 22 drives the second layer panel 2 to rotate. As previously mentioned, elongated slots 22 are formed in the lugs 23 . Among them, the rotating column 201 , the control column 202 and the lugs 23 are all located in the first notch 13 . The width of the first notch 13 is greater than the width of the lug 23 , so that the second layer panel 2 can rotate 3° to 5° relative to the first layer panel 1 .

類似地,第三層面板3能夠由第二旋轉裝置30驅動旋轉。第二旋轉裝置30與第一旋轉裝置20類似,鄰近第三層面板3之邊緣,且包括可被驅動旋轉之旋轉柱301及與旋轉柱301固定連接或一體成形之控制柱302;第三層面板3上成形有與控制柱302配合之長形槽32,從而當旋轉柱301被驅動旋轉時,與長形槽32配合之控制柱302帶動第三層面板3旋轉。如圖中所示,長形槽32形成於凸耳33中。旋轉柱301、控制柱302及凸耳33均位於所述第二凹口15內。如圖中所示,第二凹口15之寬度大於凸耳33之寬度,從而使得第三層面板3能夠相對於第一層面板1旋轉3°至5°。Similarly, the third layer panel 3 can be driven to rotate by the second rotation device 30 . The second rotating device 30 is similar to the first rotating device 20, is adjacent to the edge of the third layer panel 3, and includes a rotating column 301 that can be driven to rotate and a control column 302 that is fixedly connected or integrally formed with the rotating column 301; the third layer The panel 3 is formed with an elongated slot 32 that cooperates with the control column 302, so that when the rotating column 301 is driven to rotate, the control column 302 that cooperates with the elongated slot 32 drives the third layer panel 3 to rotate. As shown in the figure, an elongated slot 32 is formed in the lug 33 . The rotating column 301 , the control column 302 and the lug 33 are all located in the second recess 15 . As shown in the figure, the width of the second notch 15 is greater than the width of the lug 33 , so that the third layer panel 3 can rotate 3° to 5° relative to the first layer panel 1 .

如圖5A、5B中所示,第一層面板1之環形周壁12之內側設有多個滾柱17,多個滾柱17突出於環形周壁12之內表面,並與第二層面板2及第三層面板3之邊緣貼合,從而為其提供定位,保持其對中,同時亦使得二者旋轉時產生滾動摩擦,而避免了與環形周壁12之內表面產生滑動摩擦。因此,有助於生產作業及延長各層面板之使用壽命。 無遮擋之組合狀態 As shown in Figures 5A and 5B, a plurality of rollers 17 are provided inside the annular peripheral wall 12 of the first layer panel 1. The plurality of rollers 17 protrude from the inner surface of the annular peripheral wall 12 and are connected with the second layer panel 2 and The edges of the third layer panel 3 are in contact with each other to provide positioning and maintain centering, and at the same time, rolling friction occurs when the two panels rotate, thereby avoiding sliding friction with the inner surface of the annular peripheral wall 12 . Therefore, it helps production operations and extends the service life of each layer of panels. Unobstructed combined state

在圖5A至圖5D所示的組合狀態下,第一層面板1中所有氣體供給孔111均處於無遮擋狀態,此時第二層面板2及第三層面板3均未旋轉(例如原始位置)。此時滾輪25所處之位置如圖5D中所示。自圖5D可以看出,第一層面板1上之凹凸部14及第三層面板上之凹凸部35均具一或多個波峰及波谷。而此時滾輪25位於凹凸部14、35之波谷內,從而第二層面板2之下表面與第一層面板1之上表面貼合在一起,第三層面板3之下表面與第二層面板2之上表面貼合在一起。如此能有效避免在此等面板之間洩露氣體。In the combined state shown in FIGS. 5A to 5D , all gas supply holes 111 in the first layer panel 1 are in an unobstructed state, and at this time, neither the second layer panel 2 nor the third layer panel 3 is rotated (such as the original position). ). At this time, the position of the roller 25 is as shown in Figure 5D. It can be seen from FIG. 5D that the concave and convex portions 14 on the first layer panel 1 and the concave and convex portions 35 on the third layer panel each have one or more crests and troughs. At this time, the roller 25 is located in the trough of the concave and convex portions 14 and 35, so that the lower surface of the second layer panel 2 and the upper surface of the first layer panel 1 fit together, and the lower surface of the third layer panel 3 is in contact with the second layer panel 2. The upper surfaces of panels 2 are fitted together. This can effectively avoid gas leakage between these panels.

順便說明,當第一層面板1、第二層面板2及第三層面板3相對於彼此旋轉一定角度時,滾輪25在凹凸部14、35中滾動。具體地說,在旋轉之過程中,滾輪25滾過波峰,從而達到下一個波谷之後又彼此固定。因此,在旋轉之過程中,第一層面板1、第二層面板2及第三層面板3之間具有間隙,因而避免產生摩擦力。 第二層面板 2 遮擋之組合狀態 By the way, when the first layer panel 1 , the second layer panel 2 and the third layer panel 3 rotate at a certain angle relative to each other, the roller 25 rolls in the concave and convex portions 14 and 35 . Specifically, during the rotation, the rollers 25 roll over the crest of the wave and then become fixed to each other after reaching the next trough of the wave. Therefore, during the rotation process, there is a gap between the first layer panel 1, the second layer panel 2 and the third layer panel 3, thus preventing frictional force from being generated. The combination state of the second layer panel 2 occlusion

若在圖5A至圖5D所示的組合狀態,藉由驅動第一旋轉裝置20旋轉(例如,藉助圖1所示的控制器40 (例如電機),其並非本申請案之重點,因而不詳述),從而使得第二層面板2旋轉一定角度(例如4度),則到達圖6A至圖6D所示的狀態。If in the combined state shown in FIGS. 5A to 5D , by driving the first rotating device 20 to rotate (for example, by means of the controller 40 (such as a motor) shown in FIG. 1 ), it is not the focus of this application and is therefore unknown. (described above), thereby causing the second layer panel 2 to rotate at a certain angle (for example, 4 degrees), then the state shown in FIG. 6A to FIG. 6D is reached.

參考圖6A至圖6C,此時第二層面板2遮擋了第一層面板1之一部分氣體供給孔11 (尤其參考圖6C)。如圖6B所示,此時旋轉柱201、控制柱202己使得第二層面板2之凸耳23移動第一層面板1之第一凹口13內靠近圖中下面之位置。如圖6D所示,此時滾輪25己移動至位於凹凸部14、35之另一波谷(圖中最左側之波谷),而第二層面板2之下表面與第一層面板1之上表面貼合在一起,第三層面板3之下表面與第二層面板2之上表面貼合在一起。 第三層面板 3 遮擋之組合狀態 Referring to FIGS. 6A to 6C , at this time, the second layer panel 2 blocks part of the gas supply hole 11 of the first layer panel 1 (especially refer to FIG. 6C ). As shown in FIG. 6B , at this time, the rotating column 201 and the control column 202 have caused the lug 23 of the second layer panel 2 to move into the first notch 13 of the first layer panel 1 to a position close to the lower part in the figure. As shown in Figure 6D, at this time the roller 25 has moved to another valley (the leftmost valley in the figure) located at the concave and convex portions 14 and 35, and the lower surface of the second layer panel 2 and the upper surface of the first layer panel 1 Together, the lower surface of the third layer panel 3 and the upper surface of the second layer panel 2 are bonded together. The combination state of 3 occlusions in the third layer panel

若在圖5A至圖5D所示的組合狀態,藉由驅動第二旋轉裝置30旋轉(例如,藉助類似於圖1所示的控制器40 (例如電機),其並非本申請案之重點,因而不詳述),從而使得第三層面板3旋轉一定角度(例如4度),則到達圖7A至圖7D所示的狀態。If in the combined state shown in FIGS. 5A to 5D , by driving the second rotating device 30 to rotate (for example, by means of a controller 40 (such as a motor) similar to that shown in FIG. 1 ), it is not the focus of this application, and therefore (not described in detail), so that the third layer panel 3 is rotated at a certain angle (for example, 4 degrees), and then the state shown in FIG. 7A to FIG. 7D is reached.

參考圖7A至圖7B,此時旋轉柱301、控制柱302己使得第三層面板3之凸耳33移動第一層面板之第二凹口15內下面之位置。參考圖7C,此時第三層面板3遮擋了第一層面板1之一部分氣體供給孔11及第二層面板2之一部分氣體供給孔21。如圖7D所示,此時滾輪25已移動至位於凹凸部14、35之另一波谷(圖中最右側之波谷)。此外,如同先前之位置,第二層面板2之下表面與第一層面板1之上表面貼合在一起,第三層面板3之下表面與第二層面板2之上表面貼合在一起。Referring to FIGS. 7A and 7B , at this time, the rotating column 301 and the control column 302 have caused the lug 33 of the third layer panel 3 to move to the lower position in the second notch 15 of the first layer panel. Referring to FIG. 7C , at this time, the third layer panel 3 blocks part of the gas supply holes 11 of the first layer panel 1 and part of the gas supply holes 21 of the second layer panel 2 . As shown in FIG. 7D , at this time, the roller 25 has moved to another valley (the rightmost valley in the figure) located at the concave and convex parts 14 and 35 . In addition, as in the previous position, the lower surface of the second layer panel 2 is attached to the upper surface of the first layer panel 1, and the lower surface of the third layer panel 3 is attached to the upper surface of the second layer panel 2. .

藉由上面之描述可知,藉由旋轉第二層面板2及第三層面板3—定角度,即可達到調節氣體噴頭之氣體供給孔之數目及分佈之目的,從而可調節噴氣量及噴氣位置。此種靈活性不僅有助於滿足不同薄膜沈積製程之噴射需要,而且亦有助於提高沈積之薄膜之均勻性,因而適合於開發新薄膜沈積製程,降低新薄膜沈積製程之研發成本。From the above description, it can be seen that by rotating the second layer panel 2 and the third layer panel 3 to a certain angle, the number and distribution of the gas supply holes of the gas nozzle can be adjusted, thereby adjusting the injection volume and injection position. . This flexibility not only helps meet the jetting needs of different thin film deposition processes, but also helps improve the uniformity of deposited thin films, making it suitable for developing new thin film deposition processes and reducing the research and development costs of new thin film deposition processes.

參考圖8,作為上述實施例中的一種替代實施例,與上述實施例不同,第一旋轉裝置20及第二旋轉裝置30均由齒輪構成。Referring to FIG. 8 , as an alternative embodiment to the above embodiment, unlike the above embodiment, the first rotation device 20 and the second rotation device 30 are both composed of gears.

具體而言,第一旋轉裝置20鄰近第二層面板2之邊緣,且包括齒輪203;第二層面板2之邊緣具有與齒輪203嚙合之多個齒24,從而當齒輪203被驅動旋轉時,藉由齒24帶動第二層面板2旋轉。Specifically, the first rotating device 20 is adjacent to the edge of the second layer panel 2 and includes a gear 203; the edge of the second layer panel 2 has a plurality of teeth 24 meshing with the gear 203, so that when the gear 203 is driven to rotate, The teeth 24 drive the second layer panel 2 to rotate.

類似地,第二旋轉裝置30鄰近第三層面板3之邊緣,且包括齒輪303;第三層面板3之邊緣具有與所述齒輪303嚙合之多個齒34,從而當所述齒輪303被驅動旋轉時,藉由齒34帶動第三層面板3旋轉。Similarly, the second rotating device 30 is adjacent to the edge of the third layer panel 3 and includes a gear 303; the edge of the third layer panel 3 has a plurality of teeth 34 meshing with the gear 303, so that when the gear 303 is driven When rotating, the teeth 34 drive the third layer panel 3 to rotate.

同樣,齒輪203、303亦可以由圖1所示的控制器來驅動旋轉,從而帶動第二層面板2及第三層面板3旋轉,旋轉之角度與上述實施例大體相同。可藉由設計齒24、34之數目來實現。Similarly, the gears 203 and 303 can also be driven to rotate by the controller shown in Figure 1, thereby driving the second layer panel 2 and the third layer panel 3 to rotate. The angle of rotation is generally the same as in the above embodiment. This can be achieved by designing the number of teeth 24 and 34.

因此,該替代實施例亦能實現與述實施例類似之技術效果。即,藉由旋轉第二、第三層面板2、3,而調節可用於噴射氣體之氣體供給孔之分佈,從而可以滿足不同薄膜沈積製程之噴射需要,而且亦有助於提高沈積之薄膜之均勻性,因而適合於開發新薄膜沈積製程,降低新薄膜沈積製程之研發成本。Therefore, this alternative embodiment can also achieve similar technical effects as the above-mentioned embodiment. That is, by rotating the second and third layer panels 2 and 3, the distribution of the gas supply holes that can be used to inject gas can be adjusted, thereby meeting the ejection needs of different thin film deposition processes, and also helping to improve the quality of the deposited thin film. Uniformity makes it suitable for developing new thin film deposition processes and reducing the research and development costs of new thin film deposition processes.

本申請案之技術內容及技術特點己由上述相關實施例加以描述,然而上述實施例僅為實施本申請案之範例。熟習此項技術者仍可能基於本申請案之教示及揭示而作種種不背離本申請案精神之替換及修改。因此,本申請案己揭示之實施例並未限制本申請案之範圍。相反地,包含於申請專利範圍之精神及範圍內的修改及等效設置包括於本申請案之範圍內。The technical content and technical features of the present application have been described by the above-mentioned relevant embodiments. However, the above-mentioned embodiments are only examples for implementing the present application. Those skilled in the art may still make various substitutions and modifications based on the teachings and disclosures of this application without departing from the spirit of this application. Therefore, the embodiments disclosed in this application do not limit the scope of this application. On the contrary, modifications and equivalent arrangements included within the spirit and scope of the claimed patent are included in the scope of this application.

1:第一層面板 2:第二層面板 3:第三層面板 10:氣體噴頭 11:第一氣體供給孔 12:環形周壁 13:第一凹口 14:凹凸部 15:第二凹口 16:凹腔 17:滾柱 20:第一旋轉裝置 21:第二氣體供給孔 22:長形槽 23:凸耳 24:開口 25:滾輪 30:第二旋轉裝置 31:第三氣體供給孔 32:長形槽 33:凸耳 34:開口 35:凹凸部 40:控制器 50:基板承載装置 100:腔體 201:旋轉柱 202:控制柱 301:旋轉柱 302:控制柱 303:齒輪 1: First layer panel 2: Second layer panel 3: The third layer panel 10:Gas nozzle 11: First gas supply hole 12: Annular peripheral wall 13: First notch 14: Concave and convex parts 15: Second notch 16: cavity 17:Roller 20:First rotating device 21: Second gas supply hole 22:Long groove 23:Lug 24:Open your mouth 25:Roller 30:Second rotating device 31:Third gas supply hole 32:Long groove 33:Lug 34:Open your mouth 35: Concave and convex parts 40:Controller 50:Substrate carrying device 100:Cavity 201: Rotating column 202:Control column 301: Rotating column 302:Control column 303:Gear

為了更清楚地說明本申請案之具體實施及所產生之技術效果,下面結合附圖闡述本申請案之具體實施例。為了表達清楚及便於圖面之配置,此等附圖並非完全按比例繪製,例如,有些圖被放大以展示局部之細節,而有些被縮小以展示整體結構。其中:In order to more clearly explain the specific implementation of the present application and the technical effects produced, the specific embodiments of the present application are described below in conjunction with the accompanying drawings. For clarity of expression and ease of layout, the drawings are not entirely to scale. For example, some are enlarged to show local details, while others are reduced to show the overall structure. in:

圖1為採用本申請案一種實施例之氣體噴頭之基板處理室之橫截面示意圖;Figure 1 is a cross-sectional schematic diagram of a substrate processing chamber using a gas shower head according to an embodiment of the present application;

圖2A為根據本申請案一種實施例之氣體噴頭之第一層面板之立體示意圖;Figure 2A is a schematic three-dimensional view of the first layer panel of a gas nozzle according to an embodiment of the present application;

圖2B為圖2A所示的第一層面板之俯視示意圖;Figure 2B is a schematic top view of the first layer panel shown in Figure 2A;

圖2C為圖2B之A-A剖視放大圖,其展示第一層面板之橫截面結構;Figure 2C is an enlarged view of the A-A cross-section in Figure 2B, which shows the cross-sectional structure of the first layer panel;

圖3A為根據本申請案一種實施例之氣體噴頭之第二層面板之立體示意圖;Figure 3A is a schematic three-dimensional view of the second layer panel of the gas nozzle according to an embodiment of the present application;

圖3B為圖3A所示的第二層面板之俯視示意圖;Figure 3B is a schematic top view of the second layer panel shown in Figure 3A;

圖3C為圖3B之B-B剖視放大圖,其展示第二層面板之橫截面結構;Figure 3C is an enlarged view of the B-B cross-section of Figure 3B, which shows the cross-sectional structure of the second layer panel;

圖4A為根據本申請案一種實施例之氣體噴頭之第三層面板之立體示意圖;Figure 4A is a schematic three-dimensional view of the third panel of a gas nozzle according to an embodiment of the present application;

圖4B為圖4A所示的第三層面板之俯視示意圖;Figure 4B is a schematic top view of the third layer panel shown in Figure 4A;

圖4C為圖4B之C-C剖視放大圖,其展示第三層面板之橫截面結構;Figure 4C is an enlarged view of the C-C section of Figure 4B, which shows the cross-sectional structure of the third layer panel;

圖4D為圖4B之D-D剖視放大圖,尤其展示第三層面板之凹凸部;Figure 4D is an enlarged view of the D-D cross-section of Figure 4B, especially showing the concave and convex portions of the third layer panel;

圖5A為根據本申請案一種實施例之氣體噴頭整體之立體示意圖,該氣體噴頭包括三層面板,圖中所示組合狀態為第一層面板中所有通孔均處於無遮擋狀態;Figure 5A is a schematic three-dimensional view of the entire gas nozzle according to an embodiment of the present application. The gas nozzle includes three layers of panels. The combination state shown in the figure is that all through holes in the first layer of panels are in an unobstructed state;

圖5B為圖5A所示的氣體噴頭之俯視示意圖;Figure 5B is a schematic top view of the gas nozzle shown in Figure 5A;

圖5C為圖5B之E-E剖視放大圖,其中尤其展示三層面板上之相應通孔對準貫通;Figure 5C is an enlarged view of the E-E cross-section of Figure 5B, which particularly shows the alignment of corresponding through holes on the three-layer panel;

圖5D為圖5C之G-G剖視放大圖,其尤其展示於滾輪之位置;Figure 5D is an enlarged view of the G-G cross-section of Figure 5C, especially showing the position of the roller;

圖6A亦為圖5A至圖5D所示的氣體噴頭之立體示意圖,與圖5A至圖5D不同之處在於,此時第二層面板旋轉了一定角度,從而遮擋第一層面板之部分通孔;Figure 6A is also a three-dimensional schematic view of the gas nozzle shown in Figures 5A to 5D. The difference from Figures 5A to 5D is that the second layer panel is rotated at a certain angle to block part of the through holes of the first layer panel. ;

圖6B為圖6A所示的氣體噴頭之俯視示意圖;Figure 6B is a schematic top view of the gas nozzle shown in Figure 6A;

圖6C為圖6B之H-H剖視放大圖,其中尤其展示第二層面板遮擋了第一層面板之部分通孔;Figure 6C is an enlarged view of the H-H cross-section of Figure 6B, which particularly shows that the second layer panel blocks part of the through holes of the first layer panel;

圖6D為圖6C之I-I剖視放大圖,其尤其展示於滾輪之位置;Figure 6D is an enlarged view of the I-I cross-section of Figure 6C, especially showing the position of the roller;

圖7A亦為圖5A至圖5D所示的氣體噴頭之立體示意圖,與圖5A至圖5D不同之處在於,此時第三層面板旋轉了一定角度,從而遮擋第一、第二層面板之部分通孔;Figure 7A is also a three-dimensional schematic view of the gas nozzle shown in Figures 5A to 5D. The difference from Figures 5A to 5D is that the third layer panel is rotated at a certain angle to block the space between the first and second layer panels. Partially through-hole;

圖7B為圖7A所示的氣體噴頭之俯視示意圖;Figure 7B is a schematic top view of the gas nozzle shown in Figure 7A;

圖7C為圖7B之J-J剖視放大圖,其中尤其展示第三層面板遮擋了第一、第二層面板之部分通孔;Figure 7C is an enlarged view of the J-J cross-section of Figure 7B, which particularly shows that the third layer panel blocks part of the through holes of the first and second layer panels;

圖7D為圖7C之K-K剖視放大圖,其尤其展示於滾輪之位置;及Figure 7D is an enlarged view of the K-K cross-section of Figure 7C, especially showing the position of the roller; and

圖8展示本申請案之另一實施例,其中第一、第二層面板由齒輪驅動。Figure 8 shows another embodiment of the present application, in which the first and second layers of panels are driven by gears.

1:第一層面板 1: First layer panel

2:第二層面板 2: Second layer panel

3:第三層面板 3: The third layer panel

11:第一氣體供給孔 11: First gas supply hole

21:第二氣體供給孔 21: Second gas supply hole

31:第三氣體供給孔 31:Third gas supply hole

Claims (21)

一種可控氣流分佈之氣體噴頭(10),其設置於薄膜沈積裝置之腔體(100)內,且包括:第一層面板(1),其具有多個按第一規律分佈之第一氣體供給孔(11),第二層面板(2),其座靠於所述第一層面板(1)上,且具有多個按第二規律分佈之第二氣體供給孔(21),其中:所述第一層面板(1)固定不動,所述第二層面板(2)可由第一旋轉裝置(20)驅動旋轉,所述第一旋轉裝置(20)鄰近所述第二層面板(2)之邊緣,且包括可被驅動旋轉之旋轉柱(201)及與所述旋轉柱(201)固定連接或一體成形之控制柱(202);所述第二層面板(2)上成形有與所述控制柱(202)配合之長形槽(22),從而當所述旋轉柱(201)被驅動旋轉時,與所述長形槽(22)配合之控制柱(202)帶動所述第二層面板(2)旋轉,所述第一規律不同於所述第二規律,且所述第一層面板(1)及所述第二層面板(2)中的一者能夠相對於另一者旋轉,使得二者可相對於彼此具有不同的第一位置及第二位置,且在所述第一位置,所有的所述第一氣體供給孔(11)均未被所述第二層面板(2)遮蓋;在所述第二位置,所述第一氣體供給孔(11)中的一部分與相應的所述第二氣體供給孔(21)對準,另一部分被所述第二層面板(2)遮蓋。 A gas nozzle (10) with controllable gas flow distribution, which is installed in a cavity (100) of a thin film deposition device and includes: a first layer panel (1) with a plurality of first gases distributed according to a first rule The supply hole (11), the second layer panel (2), is seated against the first layer panel (1) and has a plurality of second gas supply holes (21) distributed according to a second regularity, wherein: The first layer panel (1) is fixed, and the second layer panel (2) can be driven to rotate by a first rotating device (20), and the first rotating device (20) is adjacent to the second layer panel (2). ), and includes a rotating column (201) that can be driven to rotate and a control column (202) fixedly connected to or integrally formed with the rotating column (201); the second layer panel (2) is formed with a The control column (202) cooperates with the elongated groove (22), so that when the rotating column (201) is driven to rotate, the control column (202) cooperating with the elongated groove (22) drives the third The two-layer panel (2) rotates, the first law is different from the second law, and one of the first layer panel (1) and the second layer panel (2) can rotate relative to the other The two are rotated so that they can have different first and second positions relative to each other, and in the first position, all the first gas supply holes (11) are not connected to the second layer panel. (2) Covering; in the second position, part of the first gas supply hole (11) is aligned with the corresponding second gas supply hole (21), and the other part is covered by the second layer panel (2) Cover. 如請求項1之氣體噴頭(10),其中,所述第二層面板(2)具有由其邊緣向外延伸之凸耳(23),所述長形槽(22)形成於所述凸耳(23)中。 The gas nozzle (10) of claim 1, wherein the second layer panel (2) has a lug (23) extending outward from its edge, and the elongated groove (22) is formed on the lug. (23) in. 如請求項2之氣體噴頭(10),其中,所述第一層面板(1)亦具有由其邊緣向上延伸之環形周壁(12),所述環形周壁(12)內側成形有向內開口之第一凹口(13),所述旋轉柱(201)、所述控制柱(202)及所述凸耳(23)均位於所述第一凹口(13)內。 The gas nozzle (10) of claim 2, wherein the first layer panel (1) also has an annular peripheral wall (12) extending upward from its edge, and an inward opening is formed on the inside of the annular peripheral wall (12). The first recess (13), the rotating column (201), the control column (202) and the lug (23) are all located in the first recess (13). 如請求項3之氣體噴頭(10),其中,所述第一凹口(13)之寬度大於所述凸耳(23)之寬度,從而使得所述第二層面板(2)能夠相對於所述第一層面板(1)旋轉3°至5°。 The gas nozzle (10) of claim 3, wherein the width of the first notch (13) is greater than the width of the lug (23), so that the second layer panel (2) can be positioned relative to the The first layer panel (1) is rotated by 3° to 5°. 如請求項1之氣體噴頭(10),其中,所述第一旋轉裝置(20)鄰近所述第二層面板(2)之邊緣,且包括齒輪(203);所述第二層面板(2)之邊緣具有與所述齒輪(203)嚙合之多個齒(24),從而當所述齒輪(203)被驅動旋轉時,藉由所述齒(24)帶動所述第二層面板(2)旋轉。 The gas nozzle (10) of claim 1, wherein the first rotating device (20) is adjacent to the edge of the second layer panel (2) and includes a gear (203); the second layer panel (2) ) has a plurality of teeth (24) on its edge that mesh with the gear (203), so that when the gear (203) is driven to rotate, the teeth (24) drive the second layer panel (2) ) rotate. 如請求項1之氣體噴頭(10),其中,所述第一層面板(1)之上表面上形成有多處波浪狀之凹凸部(14),所述第二層面板(2)上相應地設有能夠在所述凹凸部(14)滾動之滾輪(25),從而當所述第一層面板(1)與所述第二層面板(2)相對於彼此旋轉時,所述滾輪(25)在所述凹凸部(14)滾動。 The gas nozzle (10) of claim 1, wherein a plurality of wavy uneven portions (14) are formed on the upper surface of the first layer panel (1), and the second layer panel (2) has corresponding A roller (25) capable of rolling on the concave and convex portion (14) is provided, so that when the first layer panel (1) and the second layer panel (2) rotate relative to each other, the roller (25) 25) Roll on the concave and convex parts (14). 如請求項6之氣體噴頭(10),其中,當所述第一層面板(1)及所述第二層面板(2)相對於彼此位於所述第一位置及第二位置時,所述滾輪(25)位於所述凹凸部(14)之兩個不同波谷,此時所述第二層面板(2)之下表面與所述第一層面板(1)之上表面貼合。 The gas nozzle (10) of claim 6, wherein when the first layer panel (1) and the second layer panel (2) are located at the first position and the second position relative to each other, the The roller (25) is located at two different valleys of the concave and convex portion (14). At this time, the lower surface of the second layer panel (2) is in contact with the upper surface of the first layer panel (1). 如請求項1之氣體噴頭(10),其中,亦包括座靠於所述第二層面板(2)上之第三層面板(3),所述第三層面板(3)具有多個按第三規律分佈之第三氣體供給孔(31),所述第三規律不同於所述第一規律及所述第二規律。 The gas nozzle (10) of claim 1, which also includes a third layer panel (3) seated on the second layer panel (2), and the third layer panel (3) has a plurality of buttons. The third gas supply holes (31) are distributed in a third regular pattern, and the third regular pattern is different from the first regular pattern and the second regular pattern. 如請求項8之氣體噴頭(10),其中,所述第三層面板(3)能夠由第二旋轉裝置(30)驅動旋轉。 The gas nozzle (10) of claim 8, wherein the third layer panel (3) can be driven to rotate by the second rotating device (30). 如請求項9之氣體噴頭(10),其中,所述第二旋轉裝置(30)鄰近所述第三層面板(3)之邊緣,且包括可被驅動旋轉之旋轉柱(301)及與所述旋轉柱(301)固定連接或一體成形之控制柱(302);所述第三層面板(3)上成形有與所述控制柱(302)配合之長形槽(32),從而當所述旋轉柱(301)被驅動旋轉時,與所述長形槽(32)配合之控制柱(302)帶動所述第三層面板(3)旋轉。 The gas nozzle (10) of claim 9, wherein the second rotating device (30) is adjacent to the edge of the third layer panel (3) and includes a rotating column (301) that can be driven to rotate and is connected to the The rotating column (301) is fixedly connected or integrally formed with a control column (302); the third layer panel (3) is formed with a long slot (32) that matches the control column (302), so that when the When the rotating column (301) is driven to rotate, the control column (302) matched with the elongated slot (32) drives the third layer panel (3) to rotate. 如請求項10之氣體噴頭(10),其中,所述第三層面板(3)具有由其邊緣向外延伸之凸耳(33),所述長形槽(32)形成於所述凸耳(33)中。 The gas nozzle (10) of claim 10, wherein the third layer panel (3) has a lug (33) extending outward from its edge, and the elongated groove (32) is formed on the lug. (33) in. 如請求項11之氣體噴頭(10),其中,所述第一層面板(1)亦具有由其 邊緣向上延伸之環形周壁(12),所述環形周壁(12)內側成形有向內開口之第二凹口(15),所述旋轉柱(301)、所述控制柱(302)及所述凸耳(33)均位於所述第二凹口(15)內。 The gas nozzle (10) of claim 11, wherein the first layer panel (1) also has a An annular peripheral wall (12) with an upwardly extending edge. A second recess (15) opening inwardly is formed on the inside of the annular peripheral wall (12). The rotating column (301), the control column (302) and the The lugs (33) are located in the second recess (15). 如請求項12之氣體噴頭(10),其中,所述第二凹口(15)之寬度大於所述凸耳(33)之寬度,從而使得所述第三層面板(3)能夠相對於所述第一層面板(1)旋轉3°至5°。 The gas nozzle (10) of claim 12, wherein the width of the second notch (15) is greater than the width of the lug (33), so that the third layer panel (3) can be positioned relative to the The first layer panel (1) is rotated by 3° to 5°. 如請求項9之氣體噴頭(10),其中,所述第二旋轉裝置(30)鄰近所述第三層面板(3)之邊緣,且包括齒輪(303);所述第三層面板(3)之邊緣具有與所述齒輪(303)嚙合之多個齒(34),從而當所述齒輪(303)被驅動旋轉時,藉由所述齒(34)帶動所述第三層面板(3)旋轉。 The gas nozzle (10) of claim 9, wherein the second rotating device (30) is adjacent to the edge of the third layer panel (3) and includes a gear (303); the third layer panel (3) ) has a plurality of teeth (34) on its edge that mesh with the gear (303), so that when the gear (303) is driven to rotate, the teeth (34) drive the third layer panel (3) ) rotate. 如請求項8之氣體噴頭(10),其中,所述第三層面板(3)之下表面上形成有多處波浪狀之凹凸部(35),所述第二層面板(2)上相應地設有能夠在所述凹凸部(35)滾動之滾輪(25),從而當所述第三層面板(3)相對於所述第二層面板(2)旋轉時,所述滾輪(25)在所述凹凸部(35)滾動。 The gas nozzle (10) of claim 8, wherein a plurality of wavy uneven portions (35) are formed on the lower surface of the third layer panel (3), and the corresponding surfaces of the second layer panel (2) are A roller (25) capable of rolling on the concave and convex portion (35) is provided, so that when the third layer panel (3) rotates relative to the second layer panel (2), the roller (25) Roll on the uneven portion (35). 如請求項15之氣體噴頭(10),其中,所述凹凸部(35)具有至少兩個不同波谷,且當所述滾輪(25)位於所述凹凸部(35)之波谷中時,所述第三層面板(3)之下表面與所述第二層面板(2)之上表面貼合在一起。 The gas nozzle (10) of claim 15, wherein the concave and convex portion (35) has at least two different troughs, and when the roller (25) is located in the trough of the concave and convex portion (35), the The lower surface of the third layer panel (3) and the upper surface of the second layer panel (2) are bonded together. 如請求項8之氣體噴頭(10),其中,所述第一層面板(1)、所述第二層 面板(2)及所述第三層面板(3)均為大體圓盤狀,且三者同心地設置。 The gas nozzle (10) of claim 8, wherein the first layer panel (1), the second layer The panel (2) and the third layer panel (3) are both generally disk-shaped, and they are arranged concentrically. 如請求項17之氣體噴頭(10),其中,所述第一層面板(1)亦具有由其邊緣向上延伸之環形周壁(12),從而在所述第一層面板(1)之中部形成凹腔(16),所述第二層面板(2)及所述第三層面板(3)均位於所述凹腔(16)內。 The gas nozzle (10) of claim 17, wherein the first layer panel (1) also has an annular peripheral wall (12) extending upward from its edge, thereby forming a central layer in the middle of the first layer panel (1). The second layer panel (2) and the third layer panel (3) are both located in the cavity (16). 如請求項18之氣體噴頭(10),其中,所述環形周壁(12)之內側設有多個滾柱(17),所述多個滾柱(17)突出於所述環形周壁(12)之內表面,且與所述第二層面板(2)及所述第三層面板(3)之邊緣貼合,從而為其提供定位。 The gas nozzle (10) of claim 18, wherein a plurality of rollers (17) are provided inside the annular peripheral wall (12), and the plurality of rollers (17) protrude from the annular peripheral wall (12) The inner surface is in contact with the edges of the second layer panel (2) and the third layer panel (3) to provide positioning for them. 如請求項1之氣體噴頭(10),其中,所述第二層面板(2)能夠相對於所述第一層面板(1)旋轉3°至10°。 The gas nozzle (10) of claim 1, wherein the second layer panel (2) can rotate 3° to 10° relative to the first layer panel (1). 如請求項9之氣體噴頭(10),其中,所述第三層面板(3)能夠相對於所述第一層面板(2)旋轉3°至10°。The gas nozzle (10) of claim 9, wherein the third layer panel (3) can rotate 3° to 10° relative to the first layer panel (2).
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