KR102180291B1 - Head for high efficient atomic layer deposition and atomic layer deposition using the same - Google Patents

Abstract

The present invention relates to an atomic layer deposition apparatus having a uniform spray path having a head structure capable of uniformly spraying a precursor and a deposition gas. To this end, the present invention provides a head for an atomic layer deposition apparatus for depositing an atomic layer on a substrate to be transferred, wherein the head includes: a top layer portion in which a plurality of injection holes into which gas is injected and a discharge hole through which gas is discharged are formed; A middle layer part provided under the top layer part to disperse the gas injected from the top layer part along the transfer direction of the substrate; A top mid dispersion layer portion provided between the top layer portion and the middle layer portion and configured to uniformly disperse the gas sprayed from the top layer portion; It provides a head for an atomic layer deposition apparatus comprising a bottom layer portion provided below the midlayer portion and having a plurality of slits for spreading gas in the width direction of the substrate.
Therefore, according to the present invention, it is possible to manufacture a curved substrate on which a thin film is formed at a faster rate than before through a continuous process, and all gases are uniformly sprayed in the width direction of the substrate to manufacture a substrate on which a high quality thin film is formed. .

Description

Head for high efficient atomic layer deposition and atomic layer deposition using the same}

The present invention relates to a head for a high-efficiency atomic layer deposition apparatus and an atomic layer deposition apparatus using the same, and more particularly, to a head for a high-efficiency atomic layer deposition apparatus having a head structure capable of uniformly spraying a precursor and a deposition gas.

As a method of depositing a thin film on a substrate or wafer, there is an atomic layer deposition (ALD) method. The atomic layer deposition method is a method of forming a thin film by separating and supplying reaction raw materials, and depositing particles formed by a chemical reaction between reaction gases on the surface of a substrate or wafer. Using such an atomic layer deposition method has the advantage of being able to finely control the thickness of the thin film.

For atomic layer deposition, a method in which a curved substrate is transferred in a roll-to-roll manner and a precursor and a deposition gas are sequentially sprayed by a head to be continuously deposited on the substrate is being studied.

1 is an exploded perspective view of a head used in an atomic layer deposition apparatus according to Patent Registration No. 10-157844.

The head for the atomic layer deposition apparatus according to the patent is composed of three layers: an upper head portion 110, a lower head portion 120, and an intermediate head portion 130.

The upper head part 110 has four upper compartments 111, 112, 113, and 114 curved in a vertical direction (a width direction of the substrate) in the substrate advance direction, and different types of gases are injected or discharged. In addition, the intermediate head portion 130 has intermediate compartment spaces 131, 132, 133, and 134 corresponding to the upper compartment space, and a plurality of slits are formed in each intermediate compartment space in the substrate advance direction.

In addition, a plurality of slits arranged in parallel in the substrate advance direction are formed in the lower head part 120 so that different types of gases are injected or discharged.

The head of this configuration has the advantage of being able to deposit on a substrate at a relatively high speed by repeatedly injecting a precursor and a reaction gas onto a substrate that is continuously transferred. However, there is a problem that it is difficult to obtain a thin film of uniform quality because precursors, reaction gases, inert gases, etc. are not uniformly sprayed in the width direction of the substrate, and turbulent flow occurs due to different flow rates or flow rates injected for each gas. There is a problem that gas is not discharged smoothly.

The present invention is to solve the above problems, and to provide a head for atomic layer deposition for forming a uniform thin film at a high speed.

In order to achieve the above object, the present invention provides a head for an atomic layer deposition apparatus for depositing an atomic layer on a substrate to be transferred, wherein the head includes a plurality of injection holes through which gas is injected and a discharge hole through which gas is discharged. A top layer portion formed; A middle layer part provided under the top layer part to disperse the gas injected from the top layer part along the transfer direction of the substrate; A bottom layer portion provided below the midlayer portion and having a plurality of slits for spreading gas in the width direction of the substrate; It provides a head for an atomic layer deposition apparatus comprising a mid-bottom dispersion layer portion provided between the mid-layer portion and the bottom layer portion and having a widthwise uniform spray path for uniformly spraying the gas in the width direction of the substrate.

One end of the widthwise uniform injection path is formed to communicate with the slit of the midlayer part, the other end is formed to face the bottom layer, and the other end of the widthwise uniform injection path is formed at equal intervals in the width direction regardless of the type of gas. It is preferable that the widthwise uniform spraying includes a bent portion.

According to the present invention, further, a transfer unit for transferring the substrate; A head for an atomic layer deposition apparatus for depositing an atomic layer on a substrate to be transferred, wherein the head includes a head for depositing an atomic layer on the substrate, wherein the head includes a plurality of injection holes into which gas is injected and a gas A top layer portion in which discharge holes are formed; A middle layer part provided under the top layer part to disperse the gas injected from the top layer part along the transfer direction of the substrate; A bottom layer portion provided below the midlayer portion and having a plurality of slits for spreading gas in the width direction of the substrate; It provides an atomic layer deposition apparatus comprising a mid-bottom dispersion layer part provided between the mid-layer part and the bottom layer part and having a uniform widthwise spray path for uniformly spraying the gas in the width direction of the substrate.

According to the present invention, it is possible to manufacture a curved substrate on which a thin film is formed at a faster rate than the conventional one by a continuous process, and all gases are uniformly sprayed in the width direction of the substrate to manufacture a substrate on which a high quality thin film is formed.

1 is an exploded perspective view showing the configuration of a head for an atomic layer deposition apparatus according to the prior art;
Figure 2 is a perspective view showing the appearance of the head according to the present invention;
3 is a plan view showing the structure of a top layer in FIG. 2;
4 is a plan view showing the structure of a top mid dispersion layer in FIG. 2;
5A to 5D are cross-sectional views in the x direction in FIG. 4;
6 and 7 are plan views showing the structure of a midlayer unit;
8 is a plan view showing the structure of a bottom layer part;
9A to 9D are cross-sectional views in the width direction of the substrate showing the structure of the mid-bottom dispersion layer portion;
10 is a block diagram showing the configuration of an atomic layer deposition apparatus according to the present invention;
11 is an explanatory diagram showing the principle of operation of the head according to the present invention;
12 is an exemplary view showing an injection simulation graph using a head according to the present invention;
13 is an exemplary view showing a flow velocity graph at the bottom of the head using the head according to the present invention.

The configuration and operation of the embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2, the head for an atomic layer deposition apparatus according to the present invention is provided by stacking a plurality of layer portions up and down. That is, the head for an atomic layer deposition apparatus according to the present invention includes a top layer part 200, a mid layer part 300, a bottom layer part 400, a top mid dispersion layer part 500, and a mid-bottom dispersion layer part 600. ).

Referring to FIG. 3, the top layer part 200 is positioned at the top of the head and has a plurality of injection holes 210, 220, 230 and discharge holes 240 connected to an external gas pipe. In FIG. 3, the x-axis direction (up and down direction) indicates the direction in which the substrate is transferred, and the y-axis direction (left and right direction) indicates the width direction of the substrate. For example, TMA (TriMethyl Aluminum) may be injected as a precursor into the first injection hole 210, H ₂ O may be injected as a reaction gas into the second injection hole 220, and the third injection hole 230 N ₂ may be injected as an inert gas.

The injection hole is formed as a through hole through which gas is injected into the head, and the discharge hole is formed as a through hole through which gas or inert gas remaining after reaction by an external pump or the like is discharged to the outside of the head.

In the present invention, the injection holes and discharge holes are arranged in a row along the substrate traveling direction (x-axis direction). With such a structure, more uniform gas injection is possible, as described later, so that a high-quality thin film can be formed.

Referring to FIG. 4, a plurality of dispersion injection holes 510 are formed in the top mid dispersion layer part 500. In addition, the dispersion injection holes 510 are arranged in the width direction (y-axis direction) of the substrate.

The gas injected through the injection hole of the top layer part 200 is split and sprayed from the top mid dispersion layer part 500 in the width direction of the substrate. That is, two dispersion injection holes formed in the top mid dispersion layer part 500 are formed for each injection hole of the top layer part, and the gas injected through one injection hole is bisected into two branches and distributed injection at the same flow rate and speed. It is sprayed alone. That is, the dispersion injection hole is formed in a pair, and is formed symmetrically, so that the flow rate and velocity of the gas passing through the two dispersion injection holes become the same.

Conversely, the gas raised through the pair of distributed discharge holes 530 is collected into the discharge hole 240 in the upper part and discharged to the outside.

5A to 5D show cross-sections in the x-axis direction, which is the substrate traveling direction for each injected gas in FIG. 4.

5A to 5D, the top mid dispersion layer part 500 is located on a lower layer of the top layer part 200, and a dispersion injection hole is formed below the dispersion injection hole 510 formed in the top mid dispersion layer part. A uniform spray path 530 divided in two directions is formed as a reference.

Referring to FIG. 5A, when N ₂ gas is injected through the top layer part 200, the N ₂ gas is moved to the dispersion injection hole 510, and into a uniform spray extending downward of the dispersion injection hole 510. The amount of gas is divided equally along 530 and moves. The pair of uniform spraying furnaces have the same cross-sectional area and may be formed in a horizontal direction, but are preferably provided in a shape inclined at a certain angle to maintain a smooth flow. At this time, the pair of uniform spray paths are formed to be inclined at the same angle downward.

The top mid dispersion layer part 500 may be composed of a plurality of layers, and as the number of layers increases, the number of uniform spray paths is doubled, thereby enabling more uniform spraying. The number of such top mid dispersion layers may be provided in an appropriate number according to design conditions.

Referring to FIGS. 6 and 7, the midlayer part 300 is again composed of an upper mid-layer part 310 and a lower mid-layer part 350.

The upper mid-layer portion 310 includes partition portions 1 to 16 each divided in the width direction (Y direction) of the substrate at a position corresponding to the dispersion injection hole 510 of the top mid dispersion layer portion 500. Each partition is formed with a plurality of slots at positions determined in the moving direction (X direction) of the substrate. Therefore, only a predetermined gas is uniformly sprayed to each partition through each slit. For example, N _{2 in} compartments 1,8,9,16, TMA in compartments 2,7,10,15, and outlets in compartments 3,6,11,14 and 4,5,12,13 H ₂ O is injected into the _first compartment.

At this time, it is preferable that the same type of gas has a slit formed at the same position on the X axis. In this case, a structure in which the same gas can be evenly sprayed at the same position along the substrate moving direction is formed.

The lower mid-layer part 350 has a wide slit length in the width direction so that the gas passing through the upper mid-layer part 310 spreads in the width direction (Y-axis direction) of the substrate, so that the injected gas is uniform. It plays a role in inducing the injection to be performed.

Referring to FIG. 8, the gas that has passed through the middle layer unit 300 is finally uniformly sprayed onto the substrate through the bottom layer unit 400. The bottom layer part 400 includes a plurality of slits penetrating in the width direction of the substrate, and gases such as an inert gas, a precursor, and a reaction gas are injected through each slit.

Meanwhile, referring to FIGS. 9A to 9D, a mid-bottom dispersion layer part 600 is provided between the mid layer part 300 and the bottom layer part 400. 9A to 9D show cross-sections in the width direction of the substrate of the injection port and the discharge port through which N ₂ , TMA and H ₂ 0 are injected, respectively.

The mid-bottom dispersion layer part 600 serves to uniformly spray the gas that has passed through the mid-layer part 300 in the width direction of the substrate. To this end, the mid-bottom dispersion layer part 600 is formed with uniform spray paths 610, 620, 630, and 640 in the width direction.

The upper end of the widthwise uniform spray path is in communication with the slit of the midlayer part 300, the other end is provided to face the bottom layer part 400, and the other ends of the widthwise uniform spray path are all in advance in the width direction of the substrate. It is formed in the same position set.

That is, the other end of the widthwise uniform injection path is formed at equal intervals in the width direction regardless of the type of gas such as inert gas, first precursor, second precursor, and outlet. To this end, the widthwise uniform spray path may be formed with a bent portion in which the spraying direction is changed, and the bent portion may be formed vertically or inclined.

In this way, since the other ends of the widthwise uniform injection furnace are all formed at the same position in the width direction of the substrate, inert gas, precursor, reaction gas, etc. are all sprayed at the same flow rate and flow rate, so that atomic layer deposition can be performed very efficiently.

In addition, the mid-bottom dispersion layer part 600 may be made of a material having high thermal conductivity, such as aluminum, and a hot wire 670 is inserted into the bottom layer 660 forming the widthwise uniform spray path to be injected. Heat. In this way, the heating wire serving as a heater is inserted to maintain the temperature of the injected gas at a high temperature, thereby creating an environment in which a deposition reaction can actively occur even at room temperature.

Next, a configuration and operation of an atomic layer deposition apparatus using a head according to the present invention will be described with reference to FIGS. 10 to 13.

Referring to FIG. 10, in the atomic layer deposition apparatus (ALD) according to the present invention, a substrate 740 is wound on a unwinding roll 720 and a winding roll 730, and tension is maintained on the substrate by the support rolls 750 and 760. do. It is preferable that the substrate is provided as a flexible substrate that is bent.

The substrate is transferred by rotation of the winding roll 730, and the substrate is held horizontally between a pair of support rolls. In addition, a head 700 according to the present invention is provided on an upper portion of the substrate maintained horizontally. It is preferable that the distance between the head and the substrate is 400 to 500 μm apart.

Referring to FIG. 11, as the substrate is transferred to the right, each gas is injected from the head to a predetermined position.

Specifically, nitrogen (N ₂ ) gas, which is an inert gas, is first injected, and when passing through the nitrogen gas, TMA gas, which is a first precursor, is injected. This TMA gas is bonded to the substrate surface. Thereafter, the remaining TMA gas is discharged above the head through the discharge port by a purge operation. Next, the inert gas, N ₂ gas, is injected again, the purge operation is performed, and then the second precursor or the reactive gas, H ₂ O gas, is injected. The H ₂ O gas is chemically bonded with TMA, which is a first precursor, to form an aluminum oxide (Al ₂ O ₃ ) film.

At this time, in the head according to the present invention, since each gas is uniformly sprayed at the same flow rate and flow rate along the width direction of the substrate, it is easy to control so that the necessary amount of gas is sprayed, thereby efficiently depositing an atomic layer.

That is, referring to FIGS. 12 and 13, it can be seen that the flow velocity changes in the horizontal direction (the width direction of the substrate) to some extent, but the same pattern is formed regardless of the type of each gas. Accordingly, as the substrate is transferred, each gas is sprayed at the same flow rate in the same portion, so that turbulence is minimized and atomic layer deposition of uniform quality can be achieved.

Although the above has been described with reference to embodiments of the present invention, those of ordinary skill in the art can variously modify and modify the present invention within the scope not departing from the spirit and scope of the present invention described in the following claims. You will understand that you can change it.

700: head 200: top layer
300: mid layer part 400: bottom layer part
500: top mid dispersion layer part 600: mid bottom dispersion layer part

Claims (3)

In the head for an atomic layer deposition apparatus for depositing an atomic layer on a substrate to be transferred,
The head,
A top layer portion in which a plurality of injection holes into which gas is injected and a discharge hole through which gas is discharged are formed;
A middle layer part provided under the top layer part to disperse the gas along a traveling direction of the substrate;
A bottom layer portion provided below the midlayer portion and having a plurality of slits formed therein to spread gas in the width direction of the substrate;
A mid-bottom dispersion layer portion provided between the mid-layer portion and the bottom layer portion and having a uniform widthwise spray path for uniformly spraying the gas in the width direction of the substrate; And
A top mid dispersion layer portion provided between the top layer portion and the middle layer portion and having a dispersion injection hole through which the gas moves and a uniform injection path for dividing the gas moving through the dispersion injection hole in the substrate advancing direction Including,
The head for an atomic layer deposition apparatus, characterized in that the top mid dispersion layer portion is provided with a plurality of layers.
The method of claim 1,
One end of the widthwise uniform injection path is formed to communicate with the slit of the midlayer part, the other end is formed to face the bottom layer, and the other end of the widthwise uniform injection path is formed at equal intervals in the width direction regardless of the type of gas. The head for an atomic layer deposition apparatus, characterized in that the widthwise uniform spray path comprises a bent portion.
In the atomic layer deposition apparatus comprising a head for laminating an atomic layer on a substrate,
The head,
A top layer portion in which a plurality of injection holes into which gas is injected and a discharge hole through which gas is discharged are formed;
A middle layer part provided under the top layer part to disperse the gas along a traveling direction of the substrate;
A bottom layer portion provided below the midlayer portion and having a plurality of slits formed therein to spread gas in the width direction of the substrate;
A mid-bottom dispersion layer portion provided between the mid-layer portion and the bottom layer portion and having a uniform widthwise spray path for uniformly spraying the gas in the width direction of the substrate; And
Dispersion of a plurality of top mids provided between the top layer part and the middle layer part and having a dispersion injection hole through which the gas moves and a uniform injection path for dividing the gas moving through the dispersion injection hole in the substrate advance direction Including a layer part,
The atomic layer deposition apparatus, characterized in that the top mid dispersion layer portion is provided with a plurality of layers.

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