TWI825195B - Resin composition and method for manufacturing substrate with microlens pattern - Google Patents
Resin composition and method for manufacturing substrate with microlens pattern Download PDFInfo
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- TWI825195B TWI825195B TW108137003A TW108137003A TWI825195B TW I825195 B TWI825195 B TW I825195B TW 108137003 A TW108137003 A TW 108137003A TW 108137003 A TW108137003 A TW 108137003A TW I825195 B TWI825195 B TW I825195B
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- Prior art keywords
- resin composition
- resin
- dot pattern
- mass
- meth
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- 239000011342 resin composition Substances 0.000 title claims abstract description 86
- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229920005989 resin Polymers 0.000 claims abstract description 43
- 239000011347 resin Substances 0.000 claims abstract description 43
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 230000009477 glass transition Effects 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 20
- 239000003795 chemical substances by application Substances 0.000 claims description 17
- 125000004432 carbon atom Chemical group C* 0.000 claims description 16
- 229920000178 Acrylic resin Polymers 0.000 claims description 15
- 239000004925 Acrylic resin Substances 0.000 claims description 15
- 125000005907 alkyl ester group Chemical group 0.000 claims description 14
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 11
- 125000002947 alkylene group Chemical group 0.000 claims description 8
- 238000001595 flow curve Methods 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 238000000113 differential scanning calorimetry Methods 0.000 claims 1
- 230000004069 differentiation Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- -1 methylene, ethane-1,2-diyl Chemical group 0.000 description 43
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 30
- 150000001875 compounds Chemical class 0.000 description 16
- 238000003384 imaging method Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical group OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 7
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 7
- 229920001807 Urea-formaldehyde Polymers 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 238000004061 bleaching Methods 0.000 description 6
- 125000003700 epoxy group Chemical group 0.000 description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 229960003742 phenol Drugs 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical group [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 5
- 229920000877 Melamine resin Polymers 0.000 description 5
- 239000004640 Melamine resin Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000003431 cross linking reagent Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 150000003672 ureas Chemical class 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 229940074391 gallic acid Drugs 0.000 description 4
- 235000004515 gallic acid Nutrition 0.000 description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- 150000007974 melamines Chemical class 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 150000002989 phenols Chemical class 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 239000003504 photosensitizing agent Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 150000003440 styrenes Chemical class 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical group OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 150000003926 acrylamides Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical group OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- XJELOQYISYPGDX-UHFFFAOYSA-N ethenyl 2-chloroacetate Chemical compound ClCC(=O)OC=C XJELOQYISYPGDX-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 235000013824 polyphenols Nutrition 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229920001567 vinyl ester resin Polymers 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- SUTQSIHGGHVXFK-UHFFFAOYSA-N 1,2,2-trifluoroethenylbenzene Chemical compound FC(F)=C(F)C1=CC=CC=C1 SUTQSIHGGHVXFK-UHFFFAOYSA-N 0.000 description 1
- AUHKVLIZXLBQSR-UHFFFAOYSA-N 1,2-dichloro-3-(1,2,2-trichloroethenyl)benzene Chemical compound ClC(Cl)=C(Cl)C1=CC=CC(Cl)=C1Cl AUHKVLIZXLBQSR-UHFFFAOYSA-N 0.000 description 1
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 1
- IRFHAESXJQAGRH-UHFFFAOYSA-N 1,3-dichloro-4-(2,4-dichloro-3-ethenylphenoxy)-2-ethenylbenzene Chemical compound ClC1=C(C=C)C(Cl)=CC=C1OC1=CC=C(Cl)C(C=C)=C1Cl IRFHAESXJQAGRH-UHFFFAOYSA-N 0.000 description 1
- XPXMCUKPGZUFGR-UHFFFAOYSA-N 1-chloro-2-(1,2,2-trichloroethenyl)benzene Chemical compound ClC(Cl)=C(Cl)C1=CC=CC=C1Cl XPXMCUKPGZUFGR-UHFFFAOYSA-N 0.000 description 1
- RPWJXFPSRAUGLN-UHFFFAOYSA-N 1-chloro-2-ethenoxybenzene Chemical compound ClC1=CC=CC=C1OC=C RPWJXFPSRAUGLN-UHFFFAOYSA-N 0.000 description 1
- DNJRKFKAFWSXSE-UHFFFAOYSA-N 1-chloro-2-ethenoxyethane Chemical compound ClCCOC=C DNJRKFKAFWSXSE-UHFFFAOYSA-N 0.000 description 1
- HWCLMKDWXUGDKL-UHFFFAOYSA-N 1-ethenoxy-2-ethoxyethane Chemical compound CCOCCOC=C HWCLMKDWXUGDKL-UHFFFAOYSA-N 0.000 description 1
- GXZPMXGRNUXGHN-UHFFFAOYSA-N 1-ethenoxy-2-methoxyethane Chemical compound COCCOC=C GXZPMXGRNUXGHN-UHFFFAOYSA-N 0.000 description 1
- ZPGDWJYZCVCMOZ-UHFFFAOYSA-N 1-ethenoxyanthracene Chemical compound C1=CC=C2C=C3C(OC=C)=CC=CC3=CC2=C1 ZPGDWJYZCVCMOZ-UHFFFAOYSA-N 0.000 description 1
- NSOAQRMLVFRWIT-UHFFFAOYSA-N 1-ethenoxydecane Chemical compound CCCCCCCCCCOC=C NSOAQRMLVFRWIT-UHFFFAOYSA-N 0.000 description 1
- YAOJJEJGPZRYJF-UHFFFAOYSA-N 1-ethenoxyhexane Chemical compound CCCCCCOC=C YAOJJEJGPZRYJF-UHFFFAOYSA-N 0.000 description 1
- OHSFPBQPZFLOKE-UHFFFAOYSA-N 1-ethenoxynaphthalene Chemical compound C1=CC=C2C(OC=C)=CC=CC2=C1 OHSFPBQPZFLOKE-UHFFFAOYSA-N 0.000 description 1
- XXCVIFJHBFNFBO-UHFFFAOYSA-N 1-ethenoxyoctane Chemical compound CCCCCCCCOC=C XXCVIFJHBFNFBO-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical group C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- FCBZNZYQLJTCKR-UHFFFAOYSA-N 1-prop-2-enoxyethanol Chemical compound CC(O)OCC=C FCBZNZYQLJTCKR-UHFFFAOYSA-N 0.000 description 1
- CYLVUSZHVURAOY-UHFFFAOYSA-N 2,2-dibromoethenylbenzene Chemical compound BrC(Br)=CC1=CC=CC=C1 CYLVUSZHVURAOY-UHFFFAOYSA-N 0.000 description 1
- CISIJYCKDJSTMX-UHFFFAOYSA-N 2,2-dichloroethenylbenzene Chemical compound ClC(Cl)=CC1=CC=CC=C1 CISIJYCKDJSTMX-UHFFFAOYSA-N 0.000 description 1
- PWESSVUYESFKBH-UHFFFAOYSA-N 2,2-dimethoxyethenylbenzene Chemical compound COC(OC)=CC1=CC=CC=C1 PWESSVUYESFKBH-UHFFFAOYSA-N 0.000 description 1
- QWBBPBRQALCEIZ-UHFFFAOYSA-N 2,3-dimethylphenol Chemical group CC1=CC=CC(O)=C1C QWBBPBRQALCEIZ-UHFFFAOYSA-N 0.000 description 1
- WULAHPYSGCVQHM-UHFFFAOYSA-N 2-(2-ethenoxyethoxy)ethanol Chemical compound OCCOCCOC=C WULAHPYSGCVQHM-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- UIUSRIAANRCPGF-UHFFFAOYSA-N 2-(ethenoxymethyl)oxolane Chemical compound C=COCC1CCCO1 UIUSRIAANRCPGF-UHFFFAOYSA-N 0.000 description 1
- RCSBILYQLVXLJG-UHFFFAOYSA-N 2-Propenyl hexanoate Chemical compound CCCCCC(=O)OCC=C RCSBILYQLVXLJG-UHFFFAOYSA-N 0.000 description 1
- PZGMUSDNQDCNAG-UHFFFAOYSA-N 2-Propenyl octanoate Chemical compound CCCCCCCC(=O)OCC=C PZGMUSDNQDCNAG-UHFFFAOYSA-N 0.000 description 1
- QUUJTMWHJMGPFX-UHFFFAOYSA-N 2-[(3,5-diethyl-4-hydroxyphenyl)methyl]-4-[[3-[(3,5-diethyl-4-hydroxyphenyl)methyl]-4-hydroxy-5-methylphenyl]methyl]-6-methylphenol Chemical compound CCC1=C(O)C(CC)=CC(CC=2C(=C(C)C=C(CC=3C=C(CC=4C=C(CC)C(O)=C(CC)C=4)C(O)=C(C)C=3)C=2)O)=C1 QUUJTMWHJMGPFX-UHFFFAOYSA-N 0.000 description 1
- LGIPBCFSXRLKRY-UHFFFAOYSA-N 2-[(4-hydroxy-3,5-dimethylphenyl)methyl]-6-[[2-hydroxy-3-[(4-hydroxy-3,5-dimethylphenyl)methyl]-5-methylphenyl]methyl]-4-methylphenol Chemical compound OC=1C(CC=2C(=C(CC=3C=C(C)C(O)=C(C)C=3)C=C(C)C=2)O)=CC(C)=CC=1CC1=CC(C)=C(O)C(C)=C1 LGIPBCFSXRLKRY-UHFFFAOYSA-N 0.000 description 1
- KYOZIVFRHLSSKN-UHFFFAOYSA-N 2-[[2-hydroxy-3-[(2-hydroxy-5-methylphenyl)methyl]-5-methylphenyl]methyl]-6-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=C(CC=3C(=C(CC=4C(=CC=C(C)C=4)O)C=C(C)C=3)O)C=C(C)C=2)O)=C1 KYOZIVFRHLSSKN-UHFFFAOYSA-N 0.000 description 1
- UNKBYDNYURLNCO-UHFFFAOYSA-N 2-[[3-cyclohexyl-4-hydroxy-5-[[2-hydroxy-3-[(4-hydroxyphenyl)methyl]-5-methylphenyl]methyl]phenyl]methyl]-6-[(4-hydroxyphenyl)methyl]-4-methylphenol Chemical compound OC=1C(CC=2C=C(C(O)=C(CC=3C(=C(CC=4C=CC(O)=CC=4)C=C(C)C=3)O)C=2)C2CCCCC2)=CC(C)=CC=1CC1=CC=C(O)C=C1 UNKBYDNYURLNCO-UHFFFAOYSA-N 0.000 description 1
- XIHNGTKOSAPCSP-UHFFFAOYSA-N 2-bromo-1-ethenyl-4-(trifluoromethyl)benzene Chemical compound FC(F)(F)C1=CC=C(C=C)C(Br)=C1 XIHNGTKOSAPCSP-UHFFFAOYSA-N 0.000 description 1
- SBYMUDUGTIKLCR-UHFFFAOYSA-N 2-chloroethenylbenzene Chemical compound ClC=CC1=CC=CC=C1 SBYMUDUGTIKLCR-UHFFFAOYSA-N 0.000 description 1
- AFIAIUIEAKCWCD-UHFFFAOYSA-N 2-cyclohexyl-4-[(5-cyclohexyl-4-hydroxy-2-methylphenyl)-(2-hydroxyphenyl)methyl]-5-methylphenol Chemical compound CC1=CC(O)=C(C2CCCCC2)C=C1C(C=1C(=CC(O)=C(C2CCCCC2)C=1)C)C1=CC=CC=C1O AFIAIUIEAKCWCD-UHFFFAOYSA-N 0.000 description 1
- TUBNHXBTFDDYPI-UHFFFAOYSA-N 2-cyclohexyl-4-[(5-cyclohexyl-4-hydroxy-2-methylphenyl)-(4-hydroxyphenyl)methyl]-5-methylphenol Chemical compound CC1=CC(O)=C(C2CCCCC2)C=C1C(C=1C(=CC(O)=C(C2CCCCC2)C=1)C)C1=CC=C(O)C=C1 TUBNHXBTFDDYPI-UHFFFAOYSA-N 0.000 description 1
- MENUHMSZHZBYMK-UHFFFAOYSA-N 2-cyclohexylethenylbenzene Chemical compound C1CCCCC1C=CC1=CC=CC=C1 MENUHMSZHZBYMK-UHFFFAOYSA-N 0.000 description 1
- MVRPPTGLVPEMPI-UHFFFAOYSA-N 2-cyclohexylphenol Chemical compound OC1=CC=CC=C1C1CCCCC1 MVRPPTGLVPEMPI-UHFFFAOYSA-N 0.000 description 1
- PLWQJHWLGRXAMP-UHFFFAOYSA-N 2-ethenoxy-n,n-diethylethanamine Chemical compound CCN(CC)CCOC=C PLWQJHWLGRXAMP-UHFFFAOYSA-N 0.000 description 1
- JWCDUUFOAZFFMX-UHFFFAOYSA-N 2-ethenoxy-n,n-dimethylethanamine Chemical group CN(C)CCOC=C JWCDUUFOAZFFMX-UHFFFAOYSA-N 0.000 description 1
- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 description 1
- DDBYLRWHHCWVID-UHFFFAOYSA-N 2-ethylbut-1-enylbenzene Chemical compound CCC(CC)=CC1=CC=CC=C1 DDBYLRWHHCWVID-UHFFFAOYSA-N 0.000 description 1
- KLPQUCKLVZXJEH-UHFFFAOYSA-N 2-fluoro-4-[2-(3-fluoro-4-hydroxyphenyl)propan-2-yl]phenol Chemical compound C=1C=C(O)C(F)=CC=1C(C)(C)C1=CC=C(O)C(F)=C1 KLPQUCKLVZXJEH-UHFFFAOYSA-N 0.000 description 1
- KBKNKFIRGXQLDB-UHFFFAOYSA-N 2-fluoroethenylbenzene Chemical compound FC=CC1=CC=CC=C1 KBKNKFIRGXQLDB-UHFFFAOYSA-N 0.000 description 1
- OZPOYKXYJOHGCW-UHFFFAOYSA-N 2-iodoethenylbenzene Chemical compound IC=CC1=CC=CC=C1 OZPOYKXYJOHGCW-UHFFFAOYSA-N 0.000 description 1
- CTHJQRHPNQEPAB-UHFFFAOYSA-N 2-methoxyethenylbenzene Chemical compound COC=CC1=CC=CC=C1 CTHJQRHPNQEPAB-UHFFFAOYSA-N 0.000 description 1
- BTOVVHWKPVSLBI-UHFFFAOYSA-N 2-methylprop-1-enylbenzene Chemical compound CC(C)=CC1=CC=CC=C1 BTOVVHWKPVSLBI-UHFFFAOYSA-N 0.000 description 1
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 description 1
- XYJFAQCWRMHWFT-UHFFFAOYSA-N 2-sulfonylnaphthalene-1,4-dione Chemical class S(=O)(=O)=C1C(C2=CC=CC=C2C(C1)=O)=O XYJFAQCWRMHWFT-UHFFFAOYSA-N 0.000 description 1
- HKADMMFLLPJEAG-UHFFFAOYSA-N 3,3,3-trifluoroprop-1-enylbenzene Chemical compound FC(F)(F)C=CC1=CC=CC=C1 HKADMMFLLPJEAG-UHFFFAOYSA-N 0.000 description 1
- WDGNEDMGRQQNNI-UHFFFAOYSA-N 3-(ethenoxymethyl)pentane Chemical compound CCC(CC)COC=C WDGNEDMGRQQNNI-UHFFFAOYSA-N 0.000 description 1
- JBTDFRNUVWFUGL-UHFFFAOYSA-N 3-aminopropyl carbamimidothioate;dihydrobromide Chemical compound Br.Br.NCCCSC(N)=N JBTDFRNUVWFUGL-UHFFFAOYSA-N 0.000 description 1
- IWTYTFSSTWXZFU-UHFFFAOYSA-N 3-chloroprop-1-enylbenzene Chemical compound ClCC=CC1=CC=CC=C1 IWTYTFSSTWXZFU-UHFFFAOYSA-N 0.000 description 1
- FWLGYSGTHHKRMZ-UHFFFAOYSA-N 3-ethenoxy-2,2-dimethylbutane Chemical compound CC(C)(C)C(C)OC=C FWLGYSGTHHKRMZ-UHFFFAOYSA-N 0.000 description 1
- BJOWTLCTYPKRRU-UHFFFAOYSA-N 3-ethenoxyoctane Chemical compound CCCCCC(CC)OC=C BJOWTLCTYPKRRU-UHFFFAOYSA-N 0.000 description 1
- VCYDIDJFXXIUCY-UHFFFAOYSA-N 3-ethoxyprop-1-enylbenzene Chemical compound CCOCC=CC1=CC=CC=C1 VCYDIDJFXXIUCY-UHFFFAOYSA-N 0.000 description 1
- CEBRPXLXYCFYGU-UHFFFAOYSA-N 3-methylbut-1-enylbenzene Chemical compound CC(C)C=CC1=CC=CC=C1 CEBRPXLXYCFYGU-UHFFFAOYSA-N 0.000 description 1
- ZTHJQCDAHYOPIK-UHFFFAOYSA-N 3-methylbut-2-en-2-ylbenzene Chemical compound CC(C)=C(C)C1=CC=CC=C1 ZTHJQCDAHYOPIK-UHFFFAOYSA-N 0.000 description 1
- AIMDYNJRXHEXEL-UHFFFAOYSA-N 3-phenylprop-1-enylbenzene Chemical compound C=1C=CC=CC=1CC=CC1=CC=CC=C1 AIMDYNJRXHEXEL-UHFFFAOYSA-N 0.000 description 1
- QVXKUJXRPGXCQJ-UHFFFAOYSA-N 4,6-bis[(4-hydroxy-3,5-dimethylphenyl)methyl]benzene-1,3-diol Chemical compound CC1=C(O)C(C)=CC(CC=2C(=CC(O)=C(CC=3C=C(C)C(O)=C(C)C=3)C=2)O)=C1 QVXKUJXRPGXCQJ-UHFFFAOYSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- NBLFJUWXERDUEN-UHFFFAOYSA-N 4-[(2,3,4-trihydroxyphenyl)methyl]benzene-1,2,3-triol Chemical compound OC1=C(O)C(O)=CC=C1CC1=CC=C(O)C(O)=C1O NBLFJUWXERDUEN-UHFFFAOYSA-N 0.000 description 1
- FNFYXIMJKWENNK-UHFFFAOYSA-N 4-[(2,4-dihydroxyphenyl)methyl]benzene-1,3-diol Chemical compound OC1=CC(O)=CC=C1CC1=CC=C(O)C=C1O FNFYXIMJKWENNK-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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Abstract
本發明之課題在於提供一種樹脂組成物與一種具備使用該樹脂組成物的微透鏡圖型之基板的製造方法,該樹脂組成物係於將含有矩形的點與格子狀的間隔所成之點圖型加熱,使點圖型熱流動而形成微透鏡圖型之際,用於形成點圖型,且可形成即使在低溫下也能良好地熱流動之點圖型。 本發明之解決手段係關於將含有矩形的點與格子狀的間隔所成之點圖型加熱,使點圖型熱流動而形成微透鏡圖型之際,用於形成點圖型之樹脂組成物,將使用該樹脂組成物所形成的樹脂膜之特定條件下所測定的玻璃轉移溫度Tg設為70℃以下。An object of the present invention is to provide a resin composition based on a dot pattern composed of rectangular dots and grid-like intervals and a method for manufacturing a substrate having a microlens pattern using the resin composition. Type heating is used to form a dot pattern when heat flows in a dot pattern to form a microlens pattern, and it is possible to form a dot pattern that can flow heat well even at low temperatures. The solution of the present invention relates to a resin composition for forming a dot pattern when a dot pattern consisting of rectangular dots and grid-like intervals is heated to cause heat flow in the dot pattern to form a microlens pattern. , the glass transition temperature Tg measured under specific conditions of the resin film formed using the resin composition is 70°C or lower.
Description
本發明提供樹脂組成物與使用該樹脂組成物之微透鏡圖型的製造方法。The present invention provides a resin composition and a method for manufacturing a microlens pattern using the resin composition.
目前,於廣泛普及的數位相機或附相機的行動電話等中,搭載有固體攝像元件。作為代表的固體攝像元件,可舉出CCD(電荷耦合裝置,charge coupled device)影像感測器或CMOS(互補金屬氧化物半導體,complementary metal-oxide semiconductor)影像感測器等。於此等之影像感測器中,以提高感度為目的,設置微細的透鏡(以下稱為微透鏡)。於影像感測器之製造中,除了微透鏡之外,視需要還形成彩色濾光片等其他的零件。Currently, solid-state imaging elements are installed in widely used digital cameras, camera-equipped mobile phones, and the like. Typical solid-state imaging elements include a CCD (charge coupled device) image sensor or a CMOS (complementary metal-oxide semiconductor) image sensor. In these image sensors, fine lenses (hereinafter referred to as microlenses) are provided for the purpose of improving sensitivity. In the manufacturing of image sensors, in addition to microlenses, other parts such as color filters are also formed if necessary.
近年來,固體攝像元件的小型化、攝像畫素數的增加等係進展,為了提高聚光效率,進行各式各樣的研究開發。例如,專利文獻1中提案於固體攝像元件之受光部上側所形成的平坦化層上,塗佈光阻膜,透過光罩將光阻膜曝光後,將所曝光的光阻膜顯像,使光阻膜圖型化成透鏡形狀之方法。 於專利文獻1記載之方法中,使用形成有透光部的光罩,進行光阻膜之曝光,該透光部係由在表面部具有階梯部的光折射系統之介質所構成。 [先前技術文獻] [專利文獻]In recent years, the miniaturization of solid-state imaging elements and the increase in the number of imaging pixels have been progressed, and various research and development have been carried out in order to improve the light collection efficiency. For example, Patent Document 1 proposes to apply a photoresist film on the planarization layer formed on the upper side of the light receiving portion of the solid-state imaging element, expose the photoresist film through a photomask, and then develop the exposed photoresist film to develop the photoresist film. A method of patterning photoresist films into lens shapes. In the method described in Patent Document 1, the photoresist film is exposed using a mask formed with a light-transmitting portion composed of a medium having a light refraction system with a step portion on the surface. [Prior technical literature] [Patent Document]
[專利文獻1]日本特開2003-98649號公報[Patent Document 1] Japanese Patent Application Publication No. 2003-98649
[發明所欲解決的課題][Problem to be solved by the invention]
另一方面,於由樹脂組成物所成的微透鏡圖型之前驅圖型形成後,藉由熱處理該前驅圖型而使其熱流動,亦可形成微透鏡圖型。 於專利文獻1記載之方法中,必須使用具備精密設計形狀的光罩。如此的光罩係高價,且製造困難。然而,若藉由上述熱流動之方法,則不需要使用如專利文獻1記載之光罩。On the other hand, after the precursor pattern of the microlens pattern made of the resin composition is formed, the microlens pattern can also be formed by heat-treating the precursor pattern to cause heat flow. In the method described in Patent Document 1, a photomask with a precisely designed shape must be used. Such masks are expensive and difficult to manufacture. However, if the heat flow method is used, there is no need to use the photomask described in Patent Document 1.
關於上述藉由熱流動之微透鏡圖型的製造方法,從固體攝像元件所使用的材料之耐熱性或減低微透鏡圖型的製造能量之點來看,要求即使降低加熱溫度,也能形成良好熱流動的圖型之樹脂組成物。Regarding the above-mentioned manufacturing method of microlens patterns by thermal flow, it is required to achieve good formation even if the heating temperature is lowered from the viewpoint of the heat resistance of the material used for the solid-state imaging element or the reduction of the manufacturing energy of the microlens pattern. Heat-flowing patterned resin composition.
本發明係鑒於上述課題而完成者,目的在於提供一種樹脂組成物與一種具備使用該樹脂組成物的微透鏡圖型之基板的製造方法,該樹脂組成物係於將含有矩形的點與格子狀的間隔所成之點圖型加熱,使點圖型熱流動而形成微透鏡圖型之際,用於形成點圖型,且可形成即使在低溫下也能良好地熱流動之點圖型。 [解決課題的手段]The present invention was accomplished in view of the above problems, and aims to provide a resin composition that combines rectangular dots and grid-shaped dots and a method for manufacturing a substrate having a microlens pattern using the resin composition. When the dot pattern formed by the spacing is heated to cause heat flow in the dot pattern to form a microlens pattern, it is used to form a dot pattern and can form a dot pattern that can flow heat well even at low temperatures. [Means to solve the problem]
本發明者們發現:於將含有矩形的點與格子狀的間隔所成之點圖型加熱,使點圖型熱流動而形成微透鏡圖型之際,用於形成點圖型之樹脂組成物中,藉由將使用該樹脂組成物所形成的樹脂膜之特定條件下所測定的玻璃轉移溫度Tg設為70℃以下,可解決上述課題,終於完成本發明。更具體而言,本發明提供以下者。The inventors of the present invention discovered that when a dot pattern consisting of rectangular dots and grid-like intervals is heated to cause heat flow in the dot pattern to form a microlens pattern, the resin composition used to form the dot pattern By setting the glass transition temperature Tg measured under specific conditions of a resin film formed using this resin composition to 70° C. or lower, the above problems can be solved, and the present invention has finally been completed. More specifically, the present invention provides the following.
本發明之第1態樣為一種樹脂組成物,其係於將含有矩形的點(dot)與格子狀的間隔(space)所成之點圖型加熱,使點圖型熱流動的微透鏡圖型之形成方法中,用於形成前述點圖型之樹脂組成物, 樹脂組成物包含樹脂(A), 使用樹脂組成物所形成的樹脂膜之依照包含下述(1)~(4)之步驟的方法所測定的玻璃轉移溫度Tg為70℃以下; (1)將樹脂組成物旋轉塗佈於基板上而形成塗佈膜之步驟, (2)將塗佈膜在100℃加熱90秒而形成樹脂膜之步驟, (3)從所得之樹脂膜採集玻璃轉移點測定用的試料,使用所得之試料,進行示差掃描熱量計(DSC)之測定,取得反向熱流曲線(reversing heat flow curve)之步驟,及 (4)將所得之反向熱流曲線以溫度進行一次微分而導出的微分曲線中的極小值當作玻璃轉移溫度Tg讀取,決定玻璃轉移溫度Tg的值之步驟。A first aspect of the present invention is a resin composition, which is a microlens pattern formed by heating a dot pattern including rectangular dots and grid-like spaces to cause heat flow in the dot pattern. In the pattern forming method, the resin composition used to form the aforementioned dot pattern, The resin composition contains resin (A), The glass transition temperature Tg of the resin film formed using the resin composition measured according to the method including the following steps (1) to (4) is 70°C or less; (1) The step of spin-coating the resin composition on the substrate to form a coating film, (2) The step of heating the coating film at 100°C for 90 seconds to form a resin film, (3) The steps of collecting a sample for measuring the glass transition point from the obtained resin film, using the obtained sample, performing a differential scanning calorimeter (DSC) measurement to obtain a reversing heat flow curve, and (4) The step of determining the value of the glass transition temperature Tg by reading the minimum value in the differential curve derived by first differentiating the obtained reverse heat flow curve with temperature as the glass transition temperature Tg.
本發明之第2態樣為一種具備微透鏡圖型之基板的製造方法,其包含: 使用第1態樣之樹脂組成物,在基板上形成含有矩形的點與格子狀的間隔所成之點圖型之步驟,與 藉由加熱點圖型而使其熱流動之熱流動步驟。 [發明的效果]A second aspect of the present invention is a method for manufacturing a substrate with a microlens pattern, which includes: The step of forming a dot pattern including rectangular dots and grid-like intervals on a substrate using the resin composition of the first aspect, and The heat flow step of causing heat flow by heating the dot pattern. [Effects of the invention]
依照本發明,可提供一種樹脂組成物與一種具備使用該樹脂組成物的微透鏡圖型之基板的製造方法,該樹脂組成物係於將含有矩形的點與格子狀的間隔所成之點圖型加熱,使點圖型熱流動而形成微透鏡圖型之際,用於形成點圖型,且可形成即使在低溫下也能良好地熱流動之點圖型。According to the present invention, it is possible to provide a resin composition based on a dot pattern composed of rectangular dots and grid-like intervals and a method for manufacturing a substrate having a microlens pattern using the resin composition. Type heating is used to form a dot pattern when heat flows in a dot pattern to form a microlens pattern, and it is possible to form a dot pattern that can flow heat well even at low temperatures.
[實施發明的形態] ≪樹脂組成物≫[Form of carrying out the invention] ≪Resin composition≫
樹脂組成物係於將含有矩形的點與格子狀的間隔所成之點圖型加熱,使點圖型熱流動而形成微透鏡圖型而形成微透鏡圖型之方法中,用於形成點圖型。 此處,微透鏡圖型係由在指定位置所各自配置的2個以上之微透鏡所成之圖型。The resin composition is used to form a dot pattern by heating a dot pattern consisting of rectangular dots and grid-like intervals to cause heat flow in the dot pattern to form a microlens pattern. type. Here, the microlens pattern is a pattern formed by two or more microlenses respectively arranged at designated positions.
樹脂組成物包含樹脂(A)。 又,使用樹脂組成物所形成的樹脂膜之依照包含下述(1)~(4)之步驟的方法所測定的前述玻璃轉移溫度Tg為70℃以下。該Tg的值更佳為68℃以下,特佳為66℃以下。 (1)將樹脂組成物旋轉塗佈於基板上而形成塗佈膜之步驟, (2)將塗佈膜在100℃加熱90秒而形成樹脂膜之步驟, (3)從所得之樹脂膜採集玻璃轉移點測定用的試料,使用所得之試料,進行示差掃描熱量計(DSC)之測定,取得反向熱流曲線(reversing heat flow curve)之步驟,及 (4)將所得之反向熱流曲線以溫度進行一次微分而導出的微分曲線中的極小值當作玻璃轉移溫度Tg讀取,決定玻璃轉移溫度Tg的值之步驟。 又,Tg之下限較佳為40℃以上,更佳為50℃以上,尤佳為55℃以上。The resin composition contains resin (A). Furthermore, the glass transition temperature Tg of the resin film formed using the resin composition measured according to the method including the following steps (1) to (4) is 70°C or less. The Tg value is more preferably 68°C or lower, particularly preferably 66°C or lower. (1) The step of spin-coating the resin composition on the substrate to form a coating film, (2) The step of heating the coating film at 100°C for 90 seconds to form a resin film, (3) The steps of collecting a sample for measuring the glass transition point from the obtained resin film, using the obtained sample, performing a differential scanning calorimeter (DSC) measurement to obtain a reversing heat flow curve, and (4) The step of determining the value of the glass transition temperature Tg by reading the minimum value in the differential curve derived by first differentiating the obtained reverse heat flow curve with temperature as the glass transition temperature Tg. Moreover, the lower limit of Tg is preferably 40°C or higher, more preferably 50°C or higher, and particularly preferably 55°C or higher.
由於樹脂組成物具有上述之熱特性,可實現使用樹脂組成物所形成的點圖型之低溫下的良好熱流動。Since the resin composition has the above-mentioned thermal properties, good heat flow at low temperatures can be achieved in the dot pattern formed using the resin composition.
藉由上述方法所測定的Tg,例如可藉由將構成樹脂(A)的構成單元之化學結構予以適宜變更而調整。又,樹脂(A)包含2種以上之複數的構成單元時,藉由使構成單元的比率變化,可調整藉由上述方法所測定之Tg。再者,樹脂組成物係如後述地包含感光劑(B)時,藉由變更樹脂組成物所包含的感光劑(B)之種類或含量,可調整藉由上述方法所測定之Tg。The Tg measured by the above method can be adjusted, for example, by appropriately changing the chemical structure of the structural units constituting the resin (A). In addition, when the resin (A) contains two or more types of plural structural units, the Tg measured by the above method can be adjusted by changing the ratio of the structural units. In addition, when the resin composition contains a photosensitive agent (B) as described later, the Tg measured by the above method can be adjusted by changing the type or content of the photosensitive agent (B) contained in the resin composition.
點圖型之形成方法係沒有特別的限定。例如,點圖型係可藉由噴墨印刷法等印刷法而形成。點圖型也可藉由包含曝光及顯像的圖型化之微影法而形成。The method of forming the dot pattern is not particularly limited. For example, the dot pattern can be formed by a printing method such as inkjet printing. Dot patterns can also be formed by patterning lithography that involves exposure and development.
作為樹脂組成物,從容易形成微細且良好形狀的點圖型來看,較佳為能藉由微影法形成點圖型之感光性樹脂組成物。As the resin composition, a photosensitive resin composition capable of forming a dot pattern by a photolithography method is preferred because it is easy to form a fine and well-shaped dot pattern.
關於使用樹脂組成物所形成的點圖型,間隔的寬度較佳為0.2μm以上2.0μm以下,更佳為0.25μm以上1.0μm以下。 又,將間隔的寬度當作W,將點的高度當作H時,H/W所示的縱橫比較佳為1.0以上10.0以下,更佳為2.0以上8.0以下。 點的高度H係沒有特別的限定,但典型上較佳為0.25μm以上4.0μm以下,更佳為0.5μm以上2.0μm以下。 還有,點圖型係形成在基板上。構成點圖型的各點通常為長方體形狀、立方體形狀或類似於此等形狀之形狀,將點之與基板的厚度方向相同方向之尺寸當作點的高度H。Regarding the dot pattern formed using the resin composition, the width of the intervals is preferably 0.2 μm or more and 2.0 μm or less, more preferably 0.25 μm or more and 1.0 μm or less. Furthermore, when the width of the space is W and the height of the dot is H, the aspect ratio represented by H/W is preferably 1.0 or more and 10.0 or less, more preferably 2.0 or more and 8.0 or less. The height H of the dots is not particularly limited, but is typically preferably from 0.25 μm to 4.0 μm, more preferably from 0.5 μm to 2.0 μm. Also, the dot pattern is formed on the substrate. Each dot constituting the dot pattern usually has a rectangular parallelepiped shape, a cubic shape, or a shape similar to these shapes, and the size of the dot in the same direction as the thickness direction of the substrate is regarded as the height H of the dot.
又,點之與基板的面方向相同方向或略相同方向之矩形面之形狀係正方形、長方形或類似於此等形狀之形狀。關於點之與基板的面方向相同方向或略相同方向之矩形面,4邊各自的長度較佳為0.5μm以上5μm以下,更佳為1μm以上4μm以下。Furthermore, the shape of the rectangular surface whose points are in the same direction as or approximately the same direction as the surface direction of the substrate is a square, a rectangle, or a shape similar to these shapes. Regarding a rectangular surface whose points are in the same direction as or substantially the same direction as the surface direction of the substrate, the length of each of the four sides is preferably 0.5 μm or more and 5 μm or less, more preferably 1 μm or more and 4 μm or less.
關於使用樹脂組成物所形成的點圖型,若間隔的寬度與縱橫比為上述之範圍內,則在熱流動後,容易得到所欲形狀的微透鏡圖型。Regarding the dot pattern formed using the resin composition, if the width and aspect ratio of the intervals are within the above ranges, it is easy to obtain a microlens pattern of a desired shape after heat flow.
又,對於使用樹脂組成物所形成的點圖型之熱流動之溫度較佳為前述(Tg+5)℃以上130℃以下,更佳為(Tg+5)℃以上100℃以下。 由於該範圍內之溫度,當使用樹脂組成物所形成的點圖型熱流動時,一邊抑制點圖型之過度的熱流動,一邊容易使點圖型以所欲的程度熱流動。In addition, the temperature of the heat flow of the dot pattern formed using the resin composition is preferably not less than (Tg+5)°C and not more than 130°C, more preferably not less than (Tg+5)°C and not more than 100°C. Due to the temperature within this range, when the dot pattern heat flow formed by the resin composition is used, excessive heat flow of the dot pattern can be suppressed while the dot pattern can be easily heat-flowed to a desired degree.
作為較佳的樹脂組成物,可舉出包含作為樹脂(A)的鹼可溶性樹脂(A1)與感光劑(B)之感光性樹脂組成物。以下,說明該較佳的感光性樹脂組成物所包含之必要或任意的成分。As a preferable resin composition, a photosensitive resin composition containing an alkali-soluble resin (A1) as a resin (A) and a photosensitive agent (B) is mentioned. Necessary or optional components contained in the preferred photosensitive resin composition will be described below.
<鹼可溶性樹脂(A1)> 作為鹼可溶性樹脂(A1),只要是具有羧基、酚性羥基等鹼可溶性基之樹脂,可溶於鹼性溶液中之樹脂,則沒有特別的限定。例如,作為鹼可溶性樹脂(A1),可舉出酚樹脂、丙烯酸樹脂、苯乙烯與丙烯酸之共聚物、羥基苯乙烯之聚合物或共聚物,及聚乙烯基苯酚、聚α-甲基乙烯基苯酚等。<Alkali-soluble resin (A1)> The alkali-soluble resin (A1) is not particularly limited as long as it is a resin having an alkali-soluble group such as a carboxyl group or a phenolic hydroxyl group and is soluble in an alkaline solution. For example, examples of the alkali-soluble resin (A1) include phenol resins, acrylic resins, copolymers of styrene and acrylic acid, polymers or copolymers of hydroxystyrene, polyvinylphenol, and polyα-methylvinyl Phenol etc.
鹼可溶性樹脂(A1)較佳為含有包含下述式(a1)所示的構成單元之(甲基)丙烯酸系樹脂, (式(a1)中,R1 表示氫原子或甲基,R2 表示單鍵或碳原子數1以上5以下的伸烷基,R3 表示碳原子數1以上5以下的烷基,a表示1以上5以下之整數,b表示0以上4以下之整數,a+b為5以下,b為2以上時,複數的R3 可互相相同,也可相異)。The alkali-soluble resin (A1) is preferably a (meth)acrylic resin containing a structural unit represented by the following formula (a1), (In the formula (a1), R 1 represents a hydrogen atom or a methyl group, R 2 represents a single bond or an alkylene group having 1 to 5 carbon atoms, R 3 represents an alkyl group having 1 to 5 carbon atoms, and a represents an integer from 1 to 5, b represents an integer from 0 to 4, a+b is 5 or less, and b is 2 or more, the plural R 3 may be the same or different from each other).
(甲基)丙烯酸系樹脂包含上述式(a1)所示的構成單元時,容易得到使用感光性樹脂組成物形成點圖型之際的良好圖型化特性。When the (meth)acrylic resin contains the structural unit represented by the above formula (a1), it is easy to obtain good patterning properties when forming a dot pattern using the photosensitive resin composition.
上述式(a1)中,R2 為碳原子數1以上5以下的伸烷基時,該伸烷基可為直鏈狀,也可為支鏈狀。作為R2 的伸烷基之具體例,可舉出亞甲基、乙烷-1,2-二基、乙烷-1,1-二基、丙烷-1,3-二基、丙烷-1,2-二基、丙烷-1,1-二基、丙烷-2,2-二基、丁烷-1,4-二基、丁烷-1,3-二基、丁烷-1,2-二基、丁烷-1,1-二基、丁烷-2,3-二基、丁烷-2,2-二基、戊烷-1,5-二基、戊烷-1,4-二基、戊烷-1,3-二基、戊烷-1,2-二基、戊烷-1,1-二基、戊烷-2,4-二基、戊烷-2,3-二基、戊烷-2,2-二基及戊烷-3,3-二基。In the above formula (a1), when R 2 is an alkylene group having 1 to 5 carbon atoms, the alkylene group may be linear or branched. Specific examples of the alkylene group of R 2 include methylene, ethane-1,2-diyl, ethane-1,1-diyl, propane-1,3-diyl, and propane-1 ,2-diyl, propane-1,1-diyl, propane-2,2-diyl, butane-1,4-diyl, butane-1,3-diyl, butane-1,2 -Diyl, butane-1,1-diyl, butane-2,3-diyl, butane-2,2-diyl, pentane-1,5-diyl, pentane-1,4 -Diyl, pentane-1,3-diyl, pentane-1,2-diyl, pentane-1,1-diyl, pentane-2,4-diyl, pentane-2,3 -diyl, pentane-2,2-diyl and pentane-3,3-diyl.
作為以上說明的R2 ,從容易取得或合成能給予式(a1)所示的構成單元之化合物之點來看,或從使用樹脂組成物,容易良好地形成低溫下能流動的點圖型之點來看,較佳為單鍵、亞甲基及乙烷-1,2-二基,更佳為單鍵及亞甲基,特佳為單鍵。As R 2 described above, it is easy to obtain or synthesize a compound that can provide the structural unit represented by formula (a1), or it is easy to form a dot pattern that can flow at low temperature well using a resin composition. From a certain point of view, single bond, methylene and ethane-1,2-diyl are preferred, single bond and methylene are more preferred, and single bond is particularly preferred.
上述式(a1)中,R3 係碳原子數1以上5以下的伸烷基。作為R3 的伸烷基,可為直鏈狀,也可為支鏈狀。作為R3 的伸烷基之具體例,可舉出甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、第三丁基、正戊基、異戊基、新戊基、第二戊基、第三戊基及戊烷-3-基。In the above formula (a1), R 3 is an alkylene group having 1 to 5 carbon atoms. The alkylene group of R 3 may be linear or branched. Specific examples of the alkylene group of R 3 include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, second-butyl, third-butyl, n-pentyl, Isopentyl, neopentyl, second pentyl, third pentyl and pentan-3-yl.
式(a1)中,苯環上的羥基之數的a係1以上5以下之整數。作為a,從容易取得或合成能給予式(a1)所示的構成單元之化合物之點來看,較佳為1或2,更佳為1。In the formula (a1), a, the number of hydroxyl groups on the benzene ring, is an integer from 1 to 5. As a, 1 or 2 is preferable, and 1 is more preferable from the viewpoint of easy acquisition or synthesis of a compound that can provide a structural unit represented by formula (a1).
式(a1)中,1個以上的羥基中的至少1個係在苯環上,較佳為鍵結至相對於-CO-O-R2 -所示的基所鍵結的位置而言之對位。In the formula (a1), at least one of the one or more hydroxyl groups is bonded to the benzene ring, preferably bonded to the para position with respect to the position to which the group represented by -CO-OR 2 - is bonded. .
作為式(a1)所示的構成單元,例如較佳為下述式(a1-1)或下述式(a1-2)所示的構成單元。式(a1-1)及式(a1-2)中,R1 係氫原子或甲基。 As the structural unit represented by the formula (a1), for example, a structural unit represented by the following formula (a1-1) or the following formula (a1-2) is preferred. In formula (a1-1) and formula (a1-2), R 1 is a hydrogen atom or a methyl group.
於包含式(a1)所示的構成單元之(甲基)丙烯酸系樹脂中,式(a1)所示的構成單元之含量較佳為20質量%以上80質量%以下,更佳為20質量%以上70質量%以下,尤佳為20質量%以上60質量%以下,特佳為20質量%以上50質量%以下。 於包含式(a1)所示的構成單元之(甲基)丙烯酸系樹脂中,式(a1)所示的構成單元之含量之下限亦較佳為25質量%以上或30質量%以上。 於包含式(a1)所示的構成單元之(甲基)丙烯酸系樹脂中,若式(a1)所示的構成單元之含量為上述之範圍內,則容易兼備使用感光性樹脂組成物形成點圖型之際的良好圖型化特性與點圖型的良好低溫熱流動性。In the (meth)acrylic resin containing the structural unit represented by formula (a1), the content of the structural unit represented by formula (a1) is preferably 20 mass% or more and 80 mass% or less, more preferably 20 mass% More than 70 mass %, particularly preferably 20 mass % or more and 60 mass % or less, particularly preferably 20 mass % or more and 50 mass % or less. In the (meth)acrylic resin containing the structural unit represented by the formula (a1), the lower limit of the content of the structural unit represented by the formula (a1) is also preferably 25 mass% or more or 30 mass% or more. In the (meth)acrylic resin containing the structural unit represented by the formula (a1), if the content of the structural unit represented by the formula (a1) is within the above range, it is easy to use the photosensitive resin composition to form spots. Good patterning properties between patterns and good low-temperature thermal fluidity of dot patterns.
包含上述式(a1)所示的構成單元之(甲基)丙烯酸系樹脂,較佳為與上述式(a1)所示的構成單元一起,進一步包含來自(甲基)丙烯酸的碳原子數1以上10以下的烷酯之構成單元。 此時,可使用感光性樹脂組成物,尤其容易形成低溫熱流動性優異之點圖型。The (meth)acrylic resin containing the structural unit represented by the above formula (a1) preferably further contains 1 or more carbon atoms derived from (meth)acrylic acid together with the structural unit represented by the above formula (a1). The structural unit of alkyl esters below 10. In this case, a photosensitive resin composition can be used, and it is particularly easy to form a dot pattern with excellent low-temperature thermal fluidity.
作為(甲基)丙烯酸的碳原子數1以上10以下的烷酯,較佳為(甲基)丙烯酸的碳原子數2以上6以下的烷酯,更佳為(甲基)丙烯酸的碳原子數3以上5以下的烷酯。 構成烷酯的烷基係可為直鏈狀,也可為支鏈狀,較佳為直鏈狀。The alkyl ester of (meth)acrylic acid having 1 to 10 carbon atoms is preferably an alkyl ester of (meth)acrylic acid having 2 to 6 carbon atoms, more preferably the alkyl ester of (meth)acrylic acid having 2 to 6 carbon atoms. Alkyl esters from 3 to 5. The alkyl group constituting the alkyl ester may be linear or branched, and is preferably linear.
作為(甲基)丙烯酸的烷酯之較佳具體例,可舉出(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第二丁酯、(甲基)丙烯酸正戊酯、(甲基)丙烯酸正己酯、(甲基)丙烯酸正庚酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸正壬酯及(甲基)丙烯酸正癸酯。 於此等之中,較佳為(甲基)丙烯酸乙酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸正戊酯及(甲基)丙烯酸正己酯。Preferable specific examples of the alkyl ester of (meth)acrylate include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, and isopropyl (meth)acrylate. Ester, n-butyl (meth)acrylate, isobutyl (meth)acrylate, second-butyl (meth)acrylate, n-pentyl (meth)acrylate, n-hexyl (meth)acrylate, (meth)acrylate ) n-heptyl acrylate, n-octyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, n-nonyl (meth)acrylate and n-decyl (meth)acrylate. Among these, preferred are ethyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, n-butyl (meth)acrylate, and n-pentyl (meth)acrylate. ester and n-hexyl (meth)acrylate.
於包含式(a1)所示的構成單元之(甲基)丙烯酸系樹脂中,來自(甲基)丙烯酸的碳原子數1以上10以下的烷酯之構成單元之含量較佳為10質量%以上80質量%以下,更佳為15質量%以上80質量%以下,尤佳為20質量%以上80質量%以下。In the (meth)acrylic resin containing the structural unit represented by formula (a1), the content of the structural unit of the alkyl ester having 1 to 10 carbon atoms derived from (meth)acrylic acid is preferably 10 mass % or more. 80 mass% or less, more preferably 15 mass% or more and 80 mass% or less, particularly preferably 20 mass% or more and 80 mass% or less.
包含式(a1)所示的構成單元之(甲基)丙烯酸系樹脂,係在不妨礙本發明目的之範圍內,亦可包含式(a1)所示的構成單元及來自(甲基)丙烯酸的碳原子數1以上10以下的烷酯之構成單元以外的其他構成單元。 作為給予該其他構成單元的單體,可舉出(甲基)丙烯酸的碳原子數1以上10以下的烷酯以外之不具有環氧基的(甲基)丙烯酸酯類、具有環氧基的不飽和化合物、(甲基)丙烯醯胺類、烯丙基化合物、乙烯醚類、乙烯基酯類、苯乙烯類等。此等之化合物係可單獨或2種以上組合而使用。The (meth)acrylic resin containing the structural unit represented by formula (a1) may also contain the structural unit represented by formula (a1) and (meth)acrylic acid-derived Other structural units other than the structural units of alkyl esters having 1 to 10 carbon atoms. Examples of the monomer that provides the other structural unit include (meth)acrylates that do not have an epoxy group other than alkyl esters of (meth)acrylic acid having 1 to 10 carbon atoms, and those that have an epoxy group. Unsaturated compounds, (meth)acrylamides, allyl compounds, vinyl ethers, vinyl esters, styrenes, etc. These compounds can be used individually or in combination of 2 or more types.
作為不具有環氧基的(甲基)丙烯酸酯類,可舉出(甲基)丙烯酸氯乙酯、(甲基)丙烯酸2,2-二甲基羥基丙酯、(甲基)丙烯酸2-羥基乙酯、三羥甲基丙烷單(甲基)丙烯酸酯、(甲基)丙烯苄酸酯及(甲基)丙烯酸糠酯等。Examples of (meth)acrylates that do not have an epoxy group include chloroethyl (meth)acrylate, 2,2-dimethylhydroxypropyl (meth)acrylate, and 2-(meth)acrylate. Hydroxyethyl ester, trimethylolpropane mono(meth)acrylate, (meth)acrylic benzoate and (meth)acrylic acid furfuryl ester, etc.
作為具有環氧基的不飽和化合物,可舉出(甲基)丙烯酸環氧丙酯、(甲基)丙烯酸2-甲基環氧丙酯、(甲基)丙烯酸3,4-環氧基丁酯、(甲基)丙烯酸6,7-環氧基庚酯等之(甲基)丙烯酸環氧基烷酯類:α-乙基丙烯酸環氧丙酯、α-正丙基丙烯酸環氧丙酯、α-正丁基丙烯酸環氧丙酯、α-乙基丙烯酸6,7-環氧基庚基等之α-烷基丙烯酸環氧基烷酯類等。 作為具有環氧基的不飽和化合物,亦較佳為具有含有環氧基的脂環式基之(甲基)丙烯酸酯。Examples of the unsaturated compound having an epoxy group include epoxypropyl (meth)acrylate, 2-methylepoxypropyl (meth)acrylate, and 3,4-epoxybutyl (meth)acrylate. Ester, 6,7-epoxyheptyl (meth)acrylate, and other epoxyalkyl (meth)acrylates: α-ethyl glycidyl acrylate, α-n-propyl glycidyl acrylate , α-n-butyl glycidyl acrylate, α-ethyl acrylate 6,7-epoxyheptyl, α-alkyl acrylic acid epoxy alkyl esters, etc. As the unsaturated compound having an epoxy group, a (meth)acrylate having an alicyclic group containing an epoxy group is also preferred.
作為(甲基)丙烯醯胺類,可舉出(甲基)丙烯醯胺、N-烷基丙烯醯胺、N-芳基(甲基)丙烯醯胺、N,N-二烷基(甲基)丙烯醯胺、N,N-芳基(甲基)丙烯醯胺、N-甲基-N-苯基(甲基)丙烯醯胺、N-羥基乙基-N-甲基(甲基)丙烯醯胺等。Examples of (meth)acrylamides include (meth)acrylamide, N-alkylacrylamide, N-aryl(meth)acrylamide, and N,N-dialkyl(meth)acrylamide. acrylamide, N,N-aryl(meth)acrylamide, N-methyl-N-phenyl(meth)acrylamide, N-hydroxyethyl-N-methyl(methyl ) acrylamide, etc.
作為烯丙基化合物,可舉出醋酸烯丙酯、己酸烯丙酯、辛酸烯丙酯、月桂酸烯丙酯、棕櫊酸烯丙酯、硬脂酸烯丙酯、苯甲酸烯丙酯、乙醯乙酸烯丙酯、乳酸烯丙酯等之烯丙酯類;烯丙氧基乙醇等。Examples of the allyl compound include allyl acetate, allyl caproate, allyl octanoate, allyl laurate, allyl palmate, allyl stearate, and allyl benzoate. , allyl esters such as allyl acetyl acetate, allyl lactate, etc.; allyloxyethanol, etc.
作為乙烯基醚類,可舉出己基乙烯基醚、辛基乙烯基醚、癸基乙烯基醚、乙基己基乙烯基醚、甲氧基乙基乙烯基醚、乙氧基乙基乙烯基醚、氯乙基乙烯基醚、1-甲基-2,2-二甲基丙基乙烯基醚、2-乙基丁基乙烯基醚、羥基乙基乙烯基醚、二乙二醇乙烯基醚、二甲基胺基乙基乙烯基醚、二乙基胺基乙基乙烯基醚、丁基胺基乙基乙烯基醚、苄基乙烯基醚、四氫糠基乙烯基醚等的烷基乙烯基醚;乙烯基苯基醚、乙烯基甲苯基醚、乙烯基氯苯基醚、乙烯基-2,4-二氯苯基醚、乙烯基萘基醚、乙烯基蒽基醚等之乙烯基芳基醚等。Examples of vinyl ethers include hexyl vinyl ether, octyl vinyl ether, decyl vinyl ether, ethylhexyl vinyl ether, methoxyethyl vinyl ether, and ethoxyethyl vinyl ether. , Chloroethyl vinyl ether, 1-methyl-2,2-dimethylpropyl vinyl ether, 2-ethylbutyl vinyl ether, hydroxyethyl vinyl ether, diethylene glycol vinyl ether , alkyl groups such as dimethylaminoethylvinyl ether, diethylaminoethylvinylether, butylaminoethylvinylether, benzylvinylether, tetrahydrofurfurylvinylether, etc. Vinyl ether; vinyl phenyl ether, vinyl tolyl ether, vinyl chlorophenyl ether, vinyl-2,4-dichlorophenyl ether, vinyl naphthyl ether, vinyl anthracenyl ether, etc. Aryl ethers, etc.
作為乙烯基酯類,可舉出丁酸乙烯酯、異丁酸乙烯酯、乙酸乙烯基三甲酯、乙酸乙烯基二乙酯、戊酸乙烯酯、己酸乙烯酯、氯乙酸乙烯酯、二氯乙酸乙烯酯、乙酸乙烯基甲氧酯、乙酸乙烯基丁氧酯、乙酸乙烯基苯酯、乙醯乙酸乙烯酯、乳酸乙烯酯、丁酸乙烯基-β-苯酯、苯甲酸乙烯酯、水楊酸乙烯酯、氯苯甲酸乙烯酯、四氯苯甲酸乙烯酯、萘甲酸乙烯酯等。Examples of the vinyl esters include vinyl butyrate, vinyl isobutyrate, vinyl trimethyl acetate, vinyl diethyl acetate, vinyl valerate, vinyl hexanoate, vinyl chloroacetate, and dimethyl acetate. Vinyl chloroacetate, vinyl methoxy acetate, vinyl butoxy acetate, vinyl phenyl acetate, vinyl acetate, vinyl lactate, vinyl-β-phenyl butyrate, vinyl benzoate, Vinyl salicylate, vinyl chlorobenzoate, vinyl tetrachlorobenzoate, vinyl naphthoate, etc.
作為苯乙烯類,可舉出苯乙烯;甲基苯乙烯、二甲基苯乙烯、三甲基苯乙烯、乙基苯乙烯、二乙基苯乙烯、異丙基苯乙烯、丁基苯乙烯、己基苯乙烯、環己基苯乙烯、癸基苯乙烯、苄基苯乙烯、氯甲基苯乙烯、三氟甲基苯乙烯、乙氧基甲基苯乙烯、乙醯氧基甲基苯乙烯等的烷基苯乙烯;甲氧基苯乙烯、4-甲氧基-3-甲基苯乙烯、二甲氧基苯乙烯等之烷氧基苯乙烯;氯苯乙烯、二氯苯乙烯、三氯苯乙烯、四氯苯乙烯、五氯苯乙烯、溴苯乙烯、二溴苯乙烯、碘苯乙烯、氟苯乙烯、三氟苯乙烯、2-溴-4-三氟甲基苯乙烯、4-氟-3-三氟甲基苯乙烯等之鹵苯乙烯等。Examples of styrenes include styrene; methylstyrene, dimethylstyrene, trimethylstyrene, ethylstyrene, diethylstyrene, isopropylstyrene, butylstyrene, Hexylstyrene, cyclohexylstyrene, decylstyrene, benzylstyrene, chloromethylstyrene, trifluoromethylstyrene, ethoxymethylstyrene, acetyloxymethylstyrene, etc. Alkyl styrene; methoxystyrene, 4-methoxy-3-methylstyrene, dimethoxystyrene and other alkoxystyrenes; chlorostyrene, dichlorostyrene, trichlorobenzene Ethylene, tetrachlorostyrene, pentachlorostyrene, bromostyrene, dibromostyrene, iodostyrene, fluorostyrene, trifluorostyrene, 2-bromo-4-trifluoromethylstyrene, 4-fluoro -3-Trifluoromethylstyrene and other halogenated styrenes.
於包含式(a1)所示的構成單元之(甲基)丙烯酸系樹脂中,其他構成單元之量,以(甲基)丙烯酸系樹脂之質量為基礎,在不妨礙本發明目的之範圍內沒有限定,可為扣掉式(a1)所示的構成單元之質量及來自(甲基)丙烯酸的碳原子數1以上10以下的烷酯之構成單元之質量後的其餘量。In the (meth)acrylic resin containing the structural unit represented by formula (a1), the amount of other structural units, based on the mass of the (meth)acrylic resin, is not limited to a range that does not hinder the purpose of the present invention. It may be limited to the remaining amount after deducting the mass of the structural unit represented by formula (a1) and the mass of the structural unit derived from the alkyl ester having 1 to 10 carbon atoms derived from (meth)acrylic acid.
鹼可溶性樹脂(A1)中之包含上述式(a1)所示的構成單元之(甲基)丙烯酸系樹脂之含量較佳為70質量%以上,更佳為80質量%以上,尤佳為90質量%以上,特佳為100質量%。The content of the (meth)acrylic resin containing the structural unit represented by the above formula (a1) in the alkali-soluble resin (A1) is preferably 70 mass% or more, more preferably 80 mass% or more, and particularly preferably 90 mass% % or above, the best is 100 mass%.
鹼可溶性樹脂(A1)之分子量係沒有特別的限定,但以質量平均分子量(Mw:凝膠滲透層析法(GPC)的苯乙烯換算之測定值)表示,較佳為1000以上20000以下,更佳為1500以上15000以下,尤佳為2000以上10000以下。The molecular weight of the alkali-soluble resin (A1) is not particularly limited, but is preferably 1,000 or more and 20,000 or less, more preferably 1,000 or more and 20,000 or less, expressed as a mass average molecular weight (Mw: a value measured in terms of styrene by gel permeation chromatography (GPC)). The best value is more than 1,500 and less than 15,000, and the best value is more than 2,000 but less than 10,000.
<感光劑(B)> 感光劑(B)係藉由曝光而提高感光性樹脂組成物在鹼顯像液中的溶解性者。感光劑(B)較佳為含醌二疊氮基的化合物。<Photosensitizer (B)> The photosensitive agent (B) improves the solubility of the photosensitive resin composition in an alkali developing solution by exposure. The photosensitizer (B) is preferably a quinonediazide group-containing compound.
作為含醌二疊氮基的化合物,可舉出苯酚化合物與萘醌二疊氮磺酸化合物之完全酯化物或部分酯化物。作為上述苯酚化合物,例如可舉出2,3,4-三羥基二苯基酮、2,3,4,4’-四羥基二苯基酮等之多羥基二苯基酮化合物;三(4-羥基苯基)甲烷、雙(4-羥基-3-甲基苯基)-2-羥基苯基甲烷、雙(4-羥基-2,3,5-三甲基苯基)-2-羥基苯基甲烷、雙(4-羥基-3,5-二甲基苯基)-4-羥基苯基甲烷、雙(4-羥基-3,5-二甲基苯基)-3-羥基苯基甲烷、雙(4-羥基-3,5-二甲基苯基)-2-羥基苯基甲烷、雙(4-羥基-2,5-二甲基苯基)-4-羥基苯基甲烷、雙(4-羥基-2,5-二甲基苯基)-3-羥基苯基甲烷、雙(4-羥基-2,5-二甲基苯基)-2-羥基苯基甲烷、雙(4-羥基-3,5-二甲基苯基)-3,4-二羥基苯基甲烷、雙(4-羥基-2,5-二甲基苯基)-3,4-二羥基苯基甲烷、雙(4-羥基-2,5-二甲基苯基)-2,4-二羥基苯基甲烷、雙(4-羥基苯基)-3-甲氧基-4-羥基苯基甲烷、雙(5-環己基-4-羥基-2-甲基苯基)-4-羥基苯基甲烷、雙(5-環己基-4-羥基-2-甲基苯基)-3-羥基苯基甲烷、雙(5-環己基-4-羥基-2-甲基苯基)-2-羥基苯基甲烷、雙(5-環己基-4-羥基-2-甲基苯基)-3,4-二羥基苯基甲烷等之三苯酚型化合物;2,4-雙(3,5-二甲基-4-羥基苄基)-5-羥基苯酚、2,6-雙(2,5-二甲基-4-羥基苄基)-4-甲基苯酚等之線型3核體苯酚化合物;1,1-雙[3-(2-羥基-5-甲基苄基)-4-羥基-5-環己基苯基]異丙烷、雙[2,5-二甲基-3-(4-羥基-5-甲基苄基)-4-羥基苯基]甲烷、雙[2,5-二甲基-3-(4-羥基苄基)-4-羥基苯基]甲烷、雙[3-(3,5-二甲基-4-羥基苄基)-4-羥基-5-甲基苯基]甲烷、雙[3-(3,5-二甲基-4-羥基苄基)-4-羥基-5-乙基苯基]甲烷、雙[3-(3,5-二乙基-4-羥基苄基)-4-羥基-5-甲基苯基]甲烷、雙[3-(3,5-二乙基-4-羥基苄基)-4-羥基-5-乙基苯基]甲烷、雙[2-羥基-3-(3,5-二甲基-4-羥基苄基)-5-甲基苯基]甲烷、雙[2-羥基-3-(2-羥基-5-甲基苄基)-5-甲基苯基]甲烷、雙[4-羥基-3-(2-羥基-5-甲基苄基)-5-甲基苯基]甲烷、雙[2,5-二甲基-3-(2-羥基-5-甲基苄基)-4-羥基苯基]甲烷等之線型4核體苯酚化合物;2,4-雙[2-羥基-3-(4-羥基苄基)-5-甲基苄基]-6-環己基苯酚、2,4-雙[4-羥基-3-(4-羥基苄基)-5-甲基苄基]-6-環己基苯酚、2,6-雙[2,5-二甲基-3-(2-羥基-5-甲基苄基)-4-羥基苄基]-4-甲基苯酚等之線型5核體苯酚化合物等的線型多酚化合物;雙(2,3,4-三羥基苯基)甲烷、雙(2,4-二羥基苯基)甲烷、2,3,4-三羥基苯基-4’-羥基苯基甲烷、2-(2,3,4-三羥基苯基)-2-(2’,3’,4’-三羥基苯基)丙烷、2-(2,4-二羥基苯基)-2-(2’,4’-二羥基苯基)丙烷、2-(4-羥基苯基)-2-(4’-羥基苯基)丙烷、2-(3-氟-4-羥基苯基)-2-(3’-氟-4’-羥基苯基)丙烷、2-(2,4-二羥基苯基)-2-(4’-羥基苯基)丙烷、2-(2,3,4-三羥基苯基)-2-(4’-羥基苯基)丙烷、2-(2,3,4-三羥基苯基)-2-(4’-羥基-3’,5’-二甲基苯基)丙烷等之雙酚型化合物;1-[1-(4-羥基苯基)異丙基]-4-[1,1-雙(4-羥基苯基)乙基]苯、1-[1-(3-甲基-4-羥基苯基)異丙基]-4-[1,1-雙(3-甲基-4-羥基苯基)乙基]苯等之多核分枝型化合物;1,1-雙(4-羥基苯基)環己烷等之縮合型苯酚化合物等。此等係可1種或2種以上組合而使用。Examples of the quinonediazide group-containing compound include a complete esterified product or a partially esterified product of a phenol compound and a naphthoquinonediazide sulfonic acid compound. Examples of the phenol compound include polyhydroxydiphenylketone compounds such as 2,3,4-trihydroxydiphenylketone and 2,3,4,4'-tetrahydroxydiphenylketone; tris(4 -Hydroxyphenyl)methane, bis(4-hydroxy-3-methylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-2,3,5-trimethylphenyl)-2-hydroxy Phenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)-4-hydroxyphenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)-3-hydroxyphenyl Methane, bis(4-hydroxy-3,5-dimethylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-4-hydroxyphenylmethane, Bis(4-hydroxy-2,5-dimethylphenyl)-3-hydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-2-hydroxyphenylmethane, bis( 4-hydroxy-3,5-dimethylphenyl)-3,4-dihydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-3,4-dihydroxyphenyl Methane, bis(4-hydroxy-2,5-dimethylphenyl)-2,4-dihydroxyphenylmethane, bis(4-hydroxyphenyl)-3-methoxy-4-hydroxyphenylmethane , bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-4-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-3-hydroxybenzene methylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-2-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-3, Triphenol-type compounds such as 4-dihydroxyphenylmethane; 2,4-bis(3,5-dimethyl-4-hydroxybenzyl)-5-hydroxyphenol, 2,6-bis(2,5- Linear 3-core phenol compounds such as dimethyl-4-hydroxybenzyl)-4-methylphenol; 1,1-bis[3-(2-hydroxy-5-methylbenzyl)-4-hydroxy- 5-cyclohexylphenyl]isopropane, bis[2,5-dimethyl-3-(4-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane, bis[2,5-di Methyl-3-(4-hydroxybenzyl)-4-hydroxyphenyl]methane, bis[3-(3,5-dimethyl-4-hydroxybenzyl)-4-hydroxy-5-methylbenzene methyl]methane, bis[3-(3,5-dimethyl-4-hydroxybenzyl)-4-hydroxy-5-ethylphenyl]methane, bis[3-(3,5-diethyl- 4-hydroxybenzyl)-4-hydroxy-5-methylphenyl]methane, bis[3-(3,5-diethyl-4-hydroxybenzyl)-4-hydroxy-5-ethylphenyl ]methane, bis[2-hydroxy-3-(3,5-dimethyl-4-hydroxybenzyl)-5-methylphenyl]methane, bis[2-hydroxy-3-(2-hydroxy-5 -Methylbenzyl)-5-methylphenyl]methane, bis[4-hydroxy-3-(2-hydroxy-5-methylbenzyl)-5-methylphenyl]methane, bis[2, 5-Dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and other linear 4-core phenolic compounds; 2,4-bis[2-hydroxy-3-( 4-hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, 2,4-bis[4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl]-6 - Linear type 5 of cyclohexylphenol, 2,6-bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxybenzyl]-4-methylphenol, etc. Linear polyphenol compounds such as core phenol compounds; bis(2,3,4-trihydroxyphenyl)methane, bis(2,4-dihydroxyphenyl)methane, 2,3,4-trihydroxyphenyl- 4'-Hydroxyphenylmethane, 2-(2,3,4-trihydroxyphenyl)-2-(2',3',4'-trihydroxyphenyl)propane, 2-(2,4-di Hydroxyphenyl)-2-(2',4'-dihydroxyphenyl)propane, 2-(4-hydroxyphenyl)-2-(4'-hydroxyphenyl)propane, 2-(3-fluoro- 4-hydroxyphenyl)-2-(3'-fluoro-4'-hydroxyphenyl)propane, 2-(2,4-dihydroxyphenyl)-2-(4'-hydroxyphenyl)propane, 2 -(2,3,4-trihydroxyphenyl)-2-(4'-hydroxyphenyl)propane, 2-(2,3,4-trihydroxyphenyl)-2-(4'-hydroxy-3 Bisphenol compounds such as ',5'-dimethylphenyl)propane; 1-[1-(4-hydroxyphenyl)isopropyl]-4-[1,1-bis(4-hydroxyphenyl) )ethyl]benzene, 1-[1-(3-methyl-4-hydroxyphenyl)isopropyl]-4-[1,1-bis(3-methyl-4-hydroxyphenyl)ethyl Multinuclear branched compounds such as benzene; condensed phenol compounds such as 1,1-bis(4-hydroxyphenyl)cyclohexane, etc. These can be used 1 type or in combination of 2 or more types.
又,作為上述萘醌二疊氮磺酸化合物,可舉出萘醌-1,2-二疊氮基-5-磺醯氯或萘醌-1,2-二疊氮基-4-磺醯氯等。Examples of the naphthoquinonediazide sulfonic acid compound include naphthoquinone-1,2-diazide-5-sulfonyl chloride or naphthoquinone-1,2-diazide-4-sulfonyl chloride. Chlorine etc.
另外,亦可使用其他的含醌二疊氮基的有化合物,例如鄰苯醌二疊氮、鄰萘醌二疊氮、鄰蒽醌二疊氮或鄰萘醌二疊氮磺酸酯類等之此等的核取代衍生物,更且鄰醌二疊氮磺醯氯與具有羥基或胺基的化合物例如苯酚、對甲氧基苯酚、二甲基苯酚、氫醌、雙酚A、萘酚、兒茶酚、五倍子酚、五倍子酚單甲基醚、五倍子酚-1,3-二甲基醚、沒食子酸、羥基一部分殘留之經酯化或醚化的沒食子酸、苯酚、對胺基二苯基胺等之反應生成物等。此等係可單獨使用,且也可組合2種以上使用。In addition, other compounds containing quinonediazide groups can also be used, such as o-benzoquinonediazide, o-naphthoquinonediazide, o-anthraquinonediazide or o-naphthoquinonediazide sulfonate esters, etc. These nuclear substituted derivatives, and o-quinonediazide sulfonyl chloride and compounds with hydroxyl or amine groups such as phenol, p-methoxyphenol, dimethylphenol, hydroquinone, bisphenol A, naphthol , Catechol, gallic acid, gallic acid monomethyl ether, gallic acid-1,3-dimethyl ether, gallic acid, esterified or etherified gallic acid, phenol, Reaction products of p-aminodiphenylamine, etc. These systems can be used individually or in combination of two or more types.
此等之含醌二疊氮基的化合物,例如可藉由使上述的苯酚化合物與萘醌-1,2-二疊氮基-5-磺醯氯或萘醌-1,2-二疊氮基-4-磺醯氯在二㗁烷等適當的溶劑中,於三乙醇胺、鹼金屬碳酸鹽、鹼金屬碳酸氫鹽等之鹼的存在下縮合,使其完全酯化或部分酯化而製造。These quinonediazide-containing compounds can be prepared, for example, by mixing the above-mentioned phenol compound with naphthoquinone-1,2-diazide-5-sulfonate chloride or naphthoquinone-1,2-diazide. It is manufactured by condensing 4-sulfonyl chloride in an appropriate solvent such as dimethane in the presence of a base such as triethanolamine, alkali metal carbonate, alkali metal bicarbonate, etc., and causing complete or partial esterification. .
相對於樹脂(A)之質量,感光劑(B)之使用量較佳為50質量%以下,更佳為40質量%以下,特佳為30質量%以下。感光劑(B)的使用量之下限,例如相對於樹脂(A)之質量而言為10質量%以上,較佳為15質量%以上,更佳為20質量%以下。 藉由使用如此範圍之量的感光劑(B),可容易調製上述的Tg為適當值之樹脂組成物。結果,容易兼備使用感光性樹脂組成物形成點圖型之際的良好圖型化特性與點圖型的良好低溫熱流動性。Relative to the mass of the resin (A), the usage amount of the photosensitive agent (B) is preferably 50 mass% or less, more preferably 40 mass% or less, and particularly preferably 30 mass% or less. The lower limit of the usage amount of the photosensitive agent (B) is, for example, 10% by mass or more, preferably 15% by mass or more, and more preferably 20% by mass or less based on the mass of the resin (A). By using the photosensitive agent (B) in an amount within such a range, the above-mentioned resin composition having an appropriate Tg value can be easily prepared. As a result, it is easy to achieve both good patterning characteristics when forming a dot pattern using the photosensitive resin composition and good low-temperature thermal fluidity of the dot pattern.
(其他成分) 包含作為樹脂(A)的鹼可溶性樹脂(A1)與感光劑(B)之感光性樹脂組成物,係視需要亦可包含鹼可溶性樹脂(A1)及感光劑(B)以外的其他成分。 作為其他成分,例如可舉出有機溶劑或熱交聯劑。 感光性樹脂組成物包含熱交聯劑時,可提高所形成的微透鏡之耐熱性,容易抑制點圖型之過度的熱流動。(other ingredients) The photosensitive resin composition containing the alkali-soluble resin (A1) and the photosensitive agent (B) as the resin (A) may contain other components other than the alkali-soluble resin (A1) and the photosensitive agent (B) if necessary. Examples of other components include organic solvents and thermal crosslinking agents. When the photosensitive resin composition contains a thermal crosslinking agent, the heat resistance of the formed microlens can be improved, and excessive heat flow of the dot pattern can be easily suppressed.
作為熱交聯劑,並沒有特別的限制,例如可適宜選擇與眾所周知的交聯劑同樣者而使用。例如,可使用三聚氰胺樹脂、尿素樹脂、胍胺樹脂、乙炔脲-甲醛樹脂、琥珀醯胺-甲醛樹脂、乙烯脲-甲醛樹脂等。 特別地,可適宜使用烷氧基甲基化三聚氰胺樹脂或烷氧基甲基化尿素樹脂等之烷氧基甲基化胺基樹脂等。 其中,作為熱交聯劑之合適的具體例,可舉出甲氧基甲基化三聚氰胺樹脂、丙氧基甲基化三聚氰胺樹脂、丁氧基甲基化三聚氰胺樹脂、甲氧基甲基化尿素樹脂、乙氧基甲基化尿素樹脂、丙氧基甲基化尿素樹脂及丁氧基甲基化尿素樹脂等。The thermal cross-linking agent is not particularly limited, and for example, the same ones as well-known cross-linking agents can be appropriately selected and used. For example, melamine resin, urea resin, guanamine resin, acetylene urea-formaldehyde resin, succinamide-formaldehyde resin, ethylene urea-formaldehyde resin, etc. can be used. In particular, alkoxymethylated amine resins such as alkoxymethylated melamine resin and alkoxymethylated urea resin can be suitably used. Among them, suitable specific examples of the thermal crosslinking agent include methoxymethylated melamine resin, propoxymethylated melamine resin, butoxymethylated melamine resin, and methoxymethylated urea. Resin, ethoxymethylated urea resin, propoxymethylated urea resin and butoxymethylated urea resin, etc.
藉由均勻地混合以上說明的成分,調製樹脂組成物。The resin composition is prepared by uniformly mixing the above-described components.
≪具備微透鏡圖型之基板的製造方法≫ 使用以上說明的樹脂組成物,製造具備微透鏡圖型之基板。 具體而言,具備微透鏡圖型之基板的製造方法包含: 使用前述之樹脂組成物,在基板上形成含有矩形的點與格子狀的間隔所成之點圖型之步驟,與 藉由加熱點圖型而使其熱流動之熱流動步驟。≪Method for manufacturing substrate with microlens pattern≫ Using the resin composition described above, a substrate having a microlens pattern is produced. Specifically, the manufacturing method of a substrate with a microlens pattern includes: The step of using the aforementioned resin composition to form a dot pattern including rectangular dots and grid-like intervals on a substrate, and The heat flow step of causing heat flow by heating the dot pattern.
還有,點圖型之形狀及尺寸,係將點圖型中之間隔的寬度當作W,將點的高度當作H時,縱橫比H/W的值等之較佳範圍係如樹脂組成物中之前述。In addition, when the shape and size of the dot pattern is defined as the width of the space in the dot pattern as W and the height of the dot as H, the preferred range of the aspect ratio H/W is determined by the resin composition. Things mentioned above.
作為基板,只要是以往作為微透鏡圖型之形成對象使用的基板,則沒有特別的限定。 作為合適的基板之一例,可舉出在矽基板上形成有固體攝像元件、第1平坦化膜、彩色濾光片及第2平坦化膜之基板。 於該基板中,以將在矽基板上的指定之位置所散佈的固體攝像元件被覆之方式,形成具備平坦面的第1平坦化膜。於第1平坦化膜上,在各固體攝像元件之位置上方的位置,形成彩色濾光片。然後,以被覆彩色濾光片之方式,形成具備平坦面的第2平坦化膜。 再者,於基板中,將從矽基板朝向第2平坦化膜側之方向當作上方,將從第2平坦化膜朝向矽基板側之方向當作下方。The substrate is not particularly limited as long as it has been conventionally used as a substrate for forming microlens patterns. An example of a suitable substrate is a substrate in which a solid-state imaging element, a first planarizing film, a color filter, and a second planarizing film are formed on a silicon substrate. On this substrate, a first planarizing film having a flat surface is formed to cover the solid-state imaging elements scattered at designated positions on the silicon substrate. A color filter is formed on the first planarizing film at a position above the position of each solid-state imaging element. Then, a second planarizing film having a flat surface is formed to cover the color filter. In addition, in the substrate, the direction from the silicon substrate toward the second planarizing film side is regarded as upward, and the direction from the second planarizing film toward the silicon substrate side is regarded as downward.
以下,關於在基板上形成微透鏡圖型之方法,邊參照圖1邊說明。Hereinafter, a method of forming a microlens pattern on a substrate will be described with reference to FIG. 1 .
<形成點圖型之步驟>
如圖1(b)中記載,為了在基板10上形成微透鏡圖型,首先在基板10上,使用上述之樹脂組成物形成點圖型12。
點圖型12之形成方法係沒有特別的限定。
例如,如前述,點圖型12係可藉由噴墨印刷法等印刷法而形成。點圖型12也可藉由包含曝光及顯像的圖型化之微影法而形成。<Steps to form dot pattern>
As shown in FIG. 1(b), in order to form a microlens pattern on the
微影法之詳細配方係按照樹脂組成物中所包含的成分之種類或樹脂組成物之組成而適宜選擇。The detailed recipe of the lithography method is appropriately selected according to the types of components contained in the resin composition or the composition of the resin composition.
例如,使用較佳的樹脂組成物之包含鹼可溶性樹脂(A1)與感光劑(B)之正型感光性樹脂組成物時,首先如圖1(a)中記載,在基板10上,塗佈樹脂組成物而形成塗佈膜11。
塗佈方法係沒有特別的限定,例如可使用採用輥塗機或旋塗機之周知方法。For example, when using a positive photosensitive resin composition including an alkali-soluble resin (A1) and a photosensitive agent (B), which is a preferred resin composition, first, as shown in FIG. 1(a) , the
當塗佈膜11包含溶劑等的揮發性成分時,視需要可從塗佈膜11中去除揮發性的成分。
作為去除揮發性的成分之方法,較佳為將塗佈膜11置於減壓環境下之方法,或加熱塗佈膜11之方法。惟,塗佈膜11亦低溫下容易熱流動,以便點圖型係低溫熱流動性優異。因此,於從塗佈膜11中去除揮發性的成分之際,視需要置於經減壓的環境下,較佳為將塗佈膜11在(Tg+50℃以下)之溫度,短時間加熱120秒以下,較佳90秒以下左右。When the
接著,透過指定形狀的遮罩將塗佈膜11曝光後,藉由將經曝光的塗佈膜11予以顯像,而如圖1(b)所記載地形成點圖型12。Next, after the
曝光例如係藉由照射紫外線、準分子雷射光等之活性性能量線而進行。照射的能量線量雖然亦取決於感光性樹脂組成物之組成而不同,但例如較佳為30mJ/cm2 以上2000mJ/cm2 以下左右。Exposure is performed by irradiating active energy rays such as ultraviolet rays and excimer laser light, for example. The amount of energy rays to be irradiated varies depending on the composition of the photosensitive resin composition, but for example, it is preferably about 30 mJ/cm 2 or more and 2000 mJ/cm 2 or less.
作為顯像液,例如可使用如氫氧化四甲銨(TMAH)水溶液之有機鹼水溶液或氫氧化鈉、氫氧化鉀、偏矽酸鈉、磷酸鈉等之無機鹼水溶液。As the developing solution, for example, an organic alkali aqueous solution such as tetramethylammonium hydroxide (TMAH) aqueous solution or an inorganic alkali aqueous solution such as sodium hydroxide, potassium hydroxide, sodium metasilicate, and sodium phosphate can be used.
對於如以上所形成的點圖型12,可進行藉由全面曝光的漂白。藉由該漂白,點圖型12的透明性上升。
藉由進行漂白,樹脂組成物中所包含之如含醌二疊氮基含有化合物之感光劑(B)的光反應係發生,點圖型12之透明性上升。
作為漂白之方法,具體而言,較佳為照射波長為300nm以上450nm以下之範圍內的紫外線。
還有,即使不進行漂白,也點圖型12的透明性良好時,視需要可省略漂白。For the
<熱流動步驟>
由於對於視需要經漂白的點圖型12進行加熱,可使點圖型12熱流動。藉由該熱流動,在基板10上形成微透鏡圖型13。<Hot flow step>
By heating the optionally bleached
熱流動之溫度較佳為(Tg+5)℃以上130℃以下,更佳為(Tg+5)℃以上100℃以下。
在該範圍內之溫度,使採用樹脂組成物所形成的點圖型12熱流動時,可一邊抑制點圖型12之過度的熱流動,一邊容易使點圖型12以所欲的程度熱流動。The temperature of heat flow is preferably (Tg+5)°C or more and not more than 130°C, more preferably (Tg+5)°C or more and not more than 100°C.
When the
藉由以上說明之方法,可使點圖型即使在低溫下也良好地熱流動,藉此可良好地形成微透鏡圖型。 [實施例]Through the method described above, the dot pattern can be made to have good heat flow even at low temperatures, thereby forming a good microlens pattern. [Example]
以下,舉出實施例,更詳細地說明本發明。本發明不受此等之實施例所限定。Hereinafter, an Example is given and this invention is demonstrated in more detail. The present invention is not limited by these examples.
[實施例1~4、比較例1及比較例2] 於實施例1~4中,以下說明均勻地混合樹脂(A)、感光劑(B)、溶劑,調製感光性樹脂組成物。[Examples 1 to 4, Comparative Example 1 and Comparative Example 2] In Examples 1 to 4, the following explains how to uniformly mix the resin (A), the photosensitive agent (B), and the solvent to prepare a photosensitive resin composition.
<樹脂(A)> 於各實施例及比較例中,使用以下表1中所示的質量比含有下式A-1、A-2及A-3所示的單元之共聚物100質量份作為樹脂(A)。各實施例及比較例所用的共聚物之質量平均分子量(Mw)皆為8,000。 <Resin (A)> In each of the Examples and Comparative Examples, 100 parts by mass of a copolymer containing units represented by the following formulas A-1, A-2, and A-3 at the mass ratio shown in Table 1 below was used. Resin(A). The mass average molecular weight (Mw) of the copolymer used in each example and comparative example is 8,000.
<感光劑(B)> 於各實施例及比較例中,作為感光劑(B),使用表1中記載之量的下式所示的化合物所具有的羥基中之氫原子經1,2-萘醌二疊氮-5磺醯基所取代之取代物。感光劑所具有的羥基中之氫原子經1,2-萘醌二疊氮-5-磺醯基的取代率為98.7莫耳%。 <Photosensitive agent (B)> In each of the Examples and Comparative Examples, as the photosensitive agent (B), the hydrogen atom in the hydroxyl group of the compound represented by the following formula in the amount described in Table 1 was converted to 1,2- Substituent substituted by naphthoquinone diazide-5 sulfonyl group. The substitution rate of hydrogen atoms in the hydroxyl groups of the photosensitive agent with 1,2-naphthoquinonediazide-5-sulfonyl groups is 98.7 mol%.
以固體成分濃度成為24質量%之方式,使樹脂(A)100質量份與下述表1中記載之量的感光劑(B)溶解於丙二醇單甲基醚乙酸酯中,得到各實施例及各比較例之樹脂組成物。對於所得之樹脂組成物,藉由示差掃描熱量計,依照前述方法測定Tg。表1中記載Tg之測定結果。 對於所得之樹脂組成物,依照以下之方法,評價低溫熱流動性。表1中記載評價結果。Each Example was obtained by dissolving 100 parts by mass of the resin (A) and the amount of the photosensitizer (B) described in the following Table 1 in propylene glycol monomethyl ether acetate so that the solid content concentration became 24% by mass. and the resin compositions of each comparative example. For the obtained resin composition, Tg was measured using a differential scanning calorimeter according to the aforementioned method. Table 1 describes the measurement results of Tg. The low-temperature thermal fluidity of the obtained resin composition was evaluated according to the following method. Table 1 describes the evaluation results.
<低溫熱流動性評價> 在矽基板上,藉由旋塗機塗佈各實施例及各比較例之樹脂組成物後,進行90℃90秒之烘烤,形成膜厚1.8μm之塗佈膜。 對於所形成之塗佈膜,施予位置選擇的曝光後,使用濃度2.38質量%的氫氧化四甲銨(TMAH)水溶液,進行60秒顯像,形成點圖型。 構成所形成的點圖型之點之與基板的面方向呈平行的面之形狀係4μm×4μm的正方形。又,點間的間隔之寬度為0.5μm。使所形成的點圖型於表1中記載之條件下熱流動後,藉由電子顯微鏡照相觀察基板之表面,取得電子顯微鏡影像。從所得之電子顯微鏡影像,根據下述之基準,評價低溫熱流動性。 <Evaluation of low-temperature thermal fluidity> The resin compositions of each example and each comparative example were coated on the silicon substrate by a spin coater, and then baked at 90° C. for 90 seconds to form a coating film with a film thickness of 1.8 μm. After position-selective exposure was applied to the formed coating film, a tetramethylammonium hydroxide (TMAH) aqueous solution with a concentration of 2.38 mass % was developed for 60 seconds to form a dot pattern. The shape of the surface of the dots constituting the formed dot pattern that is parallel to the surface direction of the substrate is a square of 4 μm × 4 μm. In addition, the width of the space between dots is 0.5 μm. After the formed dot pattern is heat-flowed under the conditions described in Table 1, the surface of the substrate is observed by electron microscopy to obtain an electron microscopy image. From the obtained electron microscope image, the low-temperature thermal fluidity was evaluated based on the following criteria.
◎構成點圖型的點之4邊係變形成突出間隔方向的弧狀,且點間的間隔係可明確地視覺辨認。 ◎The four sides of the dots constituting the dot pattern are deformed into arc shapes that highlight the spacing direction, and the spacing between the dots can be clearly recognized visually.
○雖然看到點圖型之熱流動,但是難以視覺辨認點間的間隔。 ○Although the heat flow in the dot pattern can be seen, it is difficult to visually identify the intervals between the dots.
×構成點圖型的點之4邊皆為直線狀,看不到熱流動。 ×The four sides of the dots constituting the dot pattern are all straight lines, and no heat flow can be seen.
如由表1可知,使用以指定的方法所測定之使用樹脂組成物所形成的樹脂膜之Tg為70℃以下之樹脂組成物時,即使為約(Tg+30)℃左右之低溫,也使用樹脂組成物所形成的點圖型係良好地熱流動。 As can be seen from Table 1, when a resin composition is used that has a Tg of 70°C or less for a resin film formed using a resin composition measured by a specified method, even at a low temperature of about (Tg+30)°C, The dot pattern formed by the resin composition has good thermal flow.
另一方面,由比較例可知,使用上述Tg的值超過70℃之樹脂組成物時,於約(Tg+30)℃左右之低溫下,使用樹脂組成物所形成的點圖型係幾乎不熱流動。 On the other hand, it can be seen from the comparative examples that when a resin composition having a Tg value exceeding 70°C is used, the dot pattern formed using the resin composition is almost not heated at a low temperature of about (Tg+30)°C. flow.
10:基板 10:Substrate
11:塗佈膜 11:Coating film
12:點圖型 12: Point pattern
13:微透鏡圖型 13:Microlens pattern
[圖1]係示意地顯示具備微透鏡圖型之基板的製造方法之圖。[Fig. 1] is a diagram schematically showing a method of manufacturing a substrate having a microlens pattern.
10:基板 10:Substrate
11:塗佈膜 11:Coating film
12:點圖型 12: Point pattern
13:微透鏡圖型 13:Microlens pattern
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