KR102432785B1 - Method of forming pattern for partition - Google Patents

Abstract

A step (A) of patterning a black resist on a transparent substrate, a step (B) of forming a resist film by applying a positive resist composition having thermosetting ability on the transparent substrate on which the black resist has been patterned; A barrier rib pattern of a display element in which a light emitting body for each color is embedded in at least a part of a sub-pixel having a step (C) of exposing a film from the transparent substrate side, and a step (D) of developing a resist film after the exposure to form a resist pattern Formation method.

Description

Method of forming a pattern for barrier ribs

The present invention relates to a method of forming a pattern for barrier ribs of a display device in which a light emitting body for each color is embedded in at least a part of a sub-pixel.

This application claims priority based on US Provisional Application No. 62/459,066 for which it applied to the United States on February 15, 2017, and uses the content here.

Display elements, such as a liquid crystal display, have a structure in which a liquid crystal layer is sandwiched between two mutually opposing substrates. A color filter having pixels (pixels) of each color such as red (R), green (G), and blue (B) is formed inside one of the substrates. In a display element, a black matrix is formed so as to partition pixels (sub-pixels) of each color R, G, and B in order to enhance the contrast of the normal image.

In general, the color filter is formed by a lithographic method. Specifically, first, a black photosensitive composition is applied to a substrate, exposed, and developed to form a black matrix and barrier ribs. Then, each color pattern is formed in predetermined position by repeating application|coating, exposure, and image development for every photosensitive composition of each color R, G, and B, and a color filter is then manufactured.

Patent Document 1 discloses a method of providing a light-shielding wall between sub-pixels of an organic EL display.

Japanese Patent Laid-Open No. 2004-335224

In the method similar to patent document 1, in order to arrange|position a light shielding wall on a black matrix, a problem arises in alignment precision with a black matrix pattern.

In order to solve the problem of alignment precision with a black matrix pattern, the case where light-shielding wall itself sets it as the structure also serving as a black matrix is considered. However, when it is set as such a structure, transparency with respect to an ultraviolet-ray will also fall when a light-shielding wall becomes high. Therefore, there arises a problem that the lithography technique cannot be applied at the time of formation of the black matrix pattern.

The present invention has been made in view of the above circumstances, and it provides a method for forming a barrier rib pattern capable of forming barrier ribs with good alignment accuracy with a black matrix pattern in a display device in which a light emitting body for each color is embedded in at least a part of a sub-pixel. aim to

Aspect 1 of the present invention is a method of forming a pattern for barrier ribs of a display device in which a light emitting body for each color is embedded in at least a part of a sub-pixel, comprising: a step (A) of patterning a black resist on a transparent substrate; A resist film is formed by applying a resist composition on the transparent substrate patterned with the black resist (B) to form a resist film, a step (C) of exposing the resist film from the transparent substrate side, and developing the resist film after the exposure It is a formation method of the pattern for barrier ribs which has a process (D) of forming a resist pattern.

According to the present invention, it is possible to provide a method for forming a barrier rib pattern capable of forming barrier ribs with good alignment accuracy with a black matrix pattern in a display device in which at least a part of a sub-pixel is embedded with a light emitting body for each color.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic process drawing explaining one Embodiment of the pattern formation method for partitions.

In this specification and claims, "aliphatic" is a concept relative to aromatic, and is defined as meaning a group, compound, etc. that do not have aromaticity.

"Alkyl group" shall include linear, branched and cyclic monovalent saturated hydrocarbon groups unless otherwise specified. The alkyl group in the alkoxy group is the same.

"Alkylene group" shall include linear, branched and cyclic divalent saturated hydrocarbon groups unless otherwise stated.

The "halogenated alkyl group" is a group in which some or all of the hydrogen atoms of the alkyl group are substituted with halogen atoms, and examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.

A "structural unit" means a monomer unit (monomer unit) constituting a high molecular compound (resin, polymer, copolymer).

When described as "may have a substituent", both the case where a hydrogen atom (-H) is substituted with a monovalent group and the case where a methylene group (-CH ₂ -) is substituted with a divalent group is included.

"Exposure" is a concept including the overall irradiation of radiation.

"(meth)acrylate" means either or both of an acrylate and a methacrylate.

EMBODIMENT OF THE INVENTION Hereinafter, although embodiment of each aspect of this invention is described in detail, this invention is not limited at all to the following embodiment, Within the range of the objective of this invention, a change can be added and implemented suitably.

[Method of forming pattern for barrier ribs]

The method for forming a barrier rib pattern according to the present embodiment is a method of forming a barrier rib pattern of a display device in which a light emitting body for each color is embedded in at least a part of a sub-pixel, comprising: a step (A) of patterning a black resist on a transparent substrate; A step (B) of forming a resist film by applying a positive resist composition having curable ability on the transparent substrate patterned with the black resist; a step (C) of exposing the resist film from the transparent substrate side; It has a process (D) of developing a resist film later and forming a resist pattern.

Examples of the light-emitting body for each color include those used for conventional color filters of display elements, such as compound phosphors and quantum dot phosphors. Among them, from the viewpoint of narrowing the fluorescence emission region of each color and enhancing the purity of red (R), a quantum dot phosphor is preferable as a light emitting body for each color.

<Step (A)>

In step (A), a black resist is patterned on the transparent substrate 1 (FIGS. 1(a)-(c)).

The method of patterning a black resist is not specifically limited, A conventionally well-known method can be used. For example, a black resist is applied on a transparent substrate using a contact transfer coating device such as a roll coater, a reverse coater, or a bar coater, or a non-contact coating device such as a spinner (rotary coating device) or a curtain flow coater.

Then, the applied black resist is dried to form the coating film 2 . The drying method is not particularly limited, for example, (1) a method of drying for 60 seconds to 120 seconds at a temperature of 80°C to 120°C, preferably 90°C to 100°C on a hot plate, (2) several hours at room temperature You may use any of the method of leaving it to stand for several days, and (3) the method of removing the solvent by putting it in a warm air heater or an infrared heater for several tens of minutes to several hours.

Next, the coating film 2 is partially exposed by irradiating active energy rays such as ultraviolet rays or excimer laser light through a mask. Although the amount of energy to be irradiated varies depending on the composition of the black resist, for example, about 30 mJ/cm ² to about 2000 mJ/cm ² is preferable.

Then, the film after exposure is patterned into a desired shape by developing with a developer. The developing method is not specifically limited, For example, an immersion method, a spray method, etc. can be used. As a developing solution, organic things, such as monoethanolamine, diethanolamine, and triethanolamine, aqueous solutions, such as sodium hydroxide, potassium hydroxide, sodium carbonate, ammonia, and a quaternary ammonium salt, are mentioned.

Then, the pattern after image development is post-baked at about 200-250 degreeC.

As described above, the black resist can be patterned into a predetermined shape on the transparent substrate.

The thickness of the black resist (black matrix 2a) patterned on the transparent substrate can be usually set within the range of 0.5 μm to 5 μm, preferably 1 μm to 3 μm, and more preferably 1 μm to 2 μm.

In particular, it is preferable that the thickness of a black matrix is 3 micrometers or less from a viewpoint of the resolution improvement of a black matrix pattern.

(transparent substrate)

Although it will not specifically limit if it is a board|substrate which has light transmittance as a transparent substrate, Usually, a glass substrate is used.

(black resist)

It does not specifically limit as a black resist, A conventionally well-known thing can be used. For example, the photosensitive resin composition etc. containing a black pigment and a resin component are mentioned.

Examples of the black pigment include metal oxides such as carbon black, titanium black, copper, iron, manganese, cobalt, chromium, nickel, zinc, calcium, and silver, and inorganic pigments such as complex oxides, metal sulfides, metal sulfates or metal carbonates. have. It is more preferable to use carbon black and titanium black which have high light-shielding property among these black pigments.

As carbon black, well-known carbon black, such as channel black, furnace black, thermal black, and lamp black, can be used. Moreover, in order to improve the dispersibility in the inside of a black composition, it is more preferable to use resin-coated carbon black.

Examples of the resin component include polyimide resins such as epoxy resins, acrylic epoxy resins, acrylic resins, siloxane polymer resins, polyimide resins, silicon-containing polyimide resins, polyimide siloxane resins, and polymaleimide resins.

A positive photosensitive composition may be sufficient as a black resist, or a negative photosensitive composition may be sufficient as it.

When the black resist is of the positive type, it is preferable that the black resist contains an alkali-soluble resin, a photosensitizer and a black pigment.

When a black resist is a negative photosensitive resin composition, it is preferable that a black resist contains a photopolymerizable compound, a photoinitiator, and a black pigment.

<Step (B)>

In step (B), a resist film 3 is formed by applying a positive resist composition having thermosetting ability on the transparent substrate patterned with the black resist (Fig. 1(d)).

For example, a positive resist composition having thermosetting ability is applied using a spinner, a spin coater, a roll coater, a spray coater, a slit coater, or the like, and dried to form a resist film.

As a method of the said drying, the method of drying for 120-500 second at the temperature of 80-120 degreeC with a hotplate is mentioned, for example.

Although the film thickness of the said resist film 3 is not specifically limited, It is preferable that it is 6 micrometers - 50 micrometers, It is more preferable that they are 6 micrometers - 20 micrometers, It is still more preferable that they are 6 micrometers - 10 micrometers.

(Positive resist composition having thermosetting ability)

Although it does not specifically limit as a positive resist composition which has thermosetting ability, For example, a positive resist composition containing alkali-soluble resin (A) and a photosensitive agent (B) is mentioned.

[Alkali-soluble resin (A)]

As alkali-soluble resin, arbitrary resin which has alkali-soluble group which has solubility with respect to alkali can be employ|adopted.

As said alkali-soluble resin (A) (Hereinafter, it may describe as "copolymer (A)".), for example, an acrylic resin is used suitably.

It is preferable to contain the structural unit (A1) or alicyclic epoxy group containing unit (A3) represented by general formula (a-1) as acrylic resin.

[Constitution Unit (A1)]

The structural unit (A1) is represented by the following general formula (a-1).

[Tue 1]

···(a-1)

...(a-1)

[In the above general formula, R represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and Ra ⁰¹ represents an organic group having a hydrogen atom or a hydroxyl group.]

In general formula (a-1), R represents a hydrogen atom or a C1-C5 alkyl group. The alkyl group having 1 to 5 carbon atoms is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, specifically, a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, and a tert-butyl group. , a pentyl group, an isopentyl group, a neopentyl group, and the like.

In general formula (a-1), Ra ⁰¹ is a hydrogen atom or an organic group having a hydroxyl group.

Here, the organic group is, for example, a branched, linear, or cyclic alkyl group, an aryl group which may have a substituent, a heteroaryl group which may have a substituent, an aralkyl group which may have a substituent, or a substituent which may have a substituent. and a heteroaralkyl group, and Ra ⁰¹ has at least one hydroxyl group in its structure. It is preferable that carbon number of the said organic group is 1-20, and it is more preferable that it is 6-12. When carbon number is large, it is preferable from the point of storage stability, and when carbon number is small, it is excellent in resolution.

In addition, when Ra ⁰¹ is a hydrogen atom as the structural unit (A1), that is, when methacrylic acid or acrylic acid is selected, it is also effective in improving the alkali developability of the copolymer, but from the viewpoint of storage stability, the structural unit (A1) It is preferable to employ|adopt the organic group which has said hydroxyl group as ).

As a preferable example as a structural unit (A1), the structural unit represented by the following general formula (a-1-1) is mentioned.

[Tue 2]

···(a-1-1)

...(a-1-1)

[In the above general formula, R represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, Ya ⁰¹ represents a single bond or an alkylene group having 1 to 5 carbon atoms, Ra ⁰⁰¹ represents an alkyl group having 1 to 5 carbon atoms, a is The integer of 1-5 is shown, b shows the integer of 0 or 1-4, and a+b is 5 or less. In addition, when two or more Ra ⁰⁰¹ exist, these Ra ⁰⁰¹ may be mutually different or may be the same.]

In the general formula (a-1-1), R represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, as described above. In general formula (a-1-1), it is preferable that R is a methyl group.

In addition, Ya ⁰¹ represents a single bond or a linear or branched alkylene group having 1 to 5 carbon atoms. Specifically, a methylene group, ethylene group, propylene group, isopropylene group, n-butylene group, isobutylene group, tert-butylene group, pentylene group, isopentylene group, neopentylene group, etc. are mentioned. Especially, it is preferable that they are a single bond, a methylene group, and an ethylene group.

Ya ⁰¹ is preferably a single bond from the viewpoint of improving alkali solubility and further improving heat resistance when an interlayer insulating film is used.

Here, although a represents the integer of 1-5, it is preferable that a is 1 from the point which manufacture is easy. Further, the bonding position of the hydroxyl group in the benzene ring is preferably bonded to the 4-position when the carbon atom bonded to Ya ⁰¹ is used as a reference (1-position).

Moreover, ^Ra001 is a C1-C5 linear or branched alkyl group. Specific examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, and a neopentyl group. Especially, it is preferable that it is a methyl group or an ethyl group from the point which manufacture is easy.

Here, although b represents 0 or the integer of 1-4, it is preferable that b is 0 from the point which manufacture is easy.

More specifically, as the structural unit (A1), o-hydroxyphenyl (meth)acrylate, m-hydroxyphenyl (meth)acrylate, p-hydroxyphenyl (meth)acrylate, o-hydroxybenzyl (meth) ) acrylate, m-hydroxybenzyl (meth)acrylate, p-hydroxybenzyl (meth)acrylate, o-hydroxyphenylethyl (meth)acrylate, m-hydroxyphenylethyl (meth)acrylate, p-hydroxyphenylethyl (meth)acrylate etc. are mentioned, p-hydroxyphenyl (meth)acrylate or p-hydroxybenzyl (meth)acrylate is preferable, Especially p-hydroxyphenyl (meth)acrylate ) acrylates are preferred.

It is preferable that the content rate of the said structural unit (A1) in a copolymer is 10-70 mol%. Moreover, it is preferable that it is 15-60 mol%, and it is most preferable that it is 20-50 mol%.

[Unit containing alicyclic epoxy group (A3)]

Moreover, as an alicyclic epoxy group containing unit (A3), if it is a structural unit derived from the compound which has an alicyclic epoxy group in a structure and has an ethylenic double bond, it will not specifically limit. As for carbon number of the alicyclic group of an alicyclic epoxy group, about 5-10 are preferable.

Specific examples of the alicyclic epoxy group-containing unit (A3) include those derived from an alicyclic epoxy group-containing polymerizable unsaturated compound represented by the following general formulas (1) to (31).

[Tuesday 3]

[Tue 4]

In the formula, R ⁴ represents a hydrogen atom or a methyl group, R ⁵ represents a divalent hydrocarbon group having 1 to 8 carbon atoms, R ⁶ represents a divalent hydrocarbon group having 1 to 20 carbon atoms, and R ⁴ , R ⁵ and R ⁶ are It may be the same or different, and w represents the integer of 0-10.

Among these, those represented by the general formulas (1) to (6), (14), (16), (18), (21), (23) to (25), (30) are preferable. More preferably, they are general formula (1)-(6).

It is preferable that the content rate of the said alicyclic epoxy group containing unit (A3) in a copolymer is 5-40 mol%. Moreover, it is preferable that it is 10-30 mol%, and it is most preferable that it is 15-25 mol%.

[Constitution Unit (A2)]

Moreover, it is preferable that the said copolymer has a structural unit (A2) represented by general formula (a-2).

[Tue 5]

···(a-2)

...(a-2)

[R represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and Rb is a hydrocarbon group.]

In the general formula (a-2), R represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and is as described above.

Examples of the hydrocarbon group for Rb include a branched, linear or cyclic alkyl group, an aryl group which may have a substituent, or an aralkyl group which may have a substituent. It is preferable that carbon number of the said hydrocarbon group is 1-20. Moreover, as a branched and linear alkyl group, C1-C12 is preferable and 1-6 are the most preferable. As a cyclic alkyl group, C6-C20 is preferable and 6-12 are the most preferable. As an aryl group which may have a substituent, or an aralkyl group which may have a substituent, C6-C20 is preferable and 6-12 are the most preferable.

Specific examples of the structural unit (A2) include methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, butyl acrylate, amyl acrylate, ethylhexyl acrylate, octyl acrylate, and t-octyl acrylate. straight or branched chain alkyl acrylates; alicyclic alkyl acrylates such as cyclohexyl acrylate, dicyclopentanyl acrylate, 2-methylcyclohexyl acrylate, and isobornyl acrylate; and those derived from benzyl acrylate and aryl acrylate (eg, phenyl acrylate).

Or methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, n-butyl methacrylate, sec-butyl methacrylate, t-butyl methacrylate, amyl methacrylate, hexyl methacrylate straight-chain or branched alkyl methacrylates such as acrylate and octyl methacrylate; alicyclic alkyl methacrylates such as cyclohexyl methacrylate, dicyclopentanyl methacrylate, 2-methylcyclohexyl methacrylate, and isobornyl methacrylate; and those derived from benzyl methacrylate and aryl methacrylate (eg, phenyl methacrylate, crezyl methacrylate, naphthyl methacrylate, etc.).

By introduce|transducing the said structural unit (A2) into a copolymer, the dissolution speed of a copolymer can be adjusted. The structural unit (A2) is particularly preferably derived from a monomer having an alicyclic group.

It is preferable that the content rate of the structural unit (A2) in a copolymer (A) is 5-50 mol%.

[Constitution Unit (A4)]

Moreover, in the said copolymer (A), you may contain structural units (A4) other than structural units (A1) - (A3) in the range which is not contrary to the objective of this invention. This structural unit will not be specifically limited if it is a structural unit derived from the compound which has an ethylenic double bond. Examples of such structural units include structural units selected from acrylamides, methacrylamides, allyl compounds, vinyl ethers, vinyl esters, and styrenes.

Specific examples of the acrylamides include acrylamide, N-alkylacrylamide (the alkyl group preferably has 1 to 10 carbon atoms, for example, a methyl group, an ethyl group, a propyl group, a butyl group, a t-butyl group, a heptyl group, and an octyl group. , a cyclohexyl group, a hydroxyethyl group, a benzyl group, etc.), N-arylacrylamide (as an aryl group, for example, a phenyl group, a tolyl group, a nitrophenyl group, a naphthyl group, a hydroxyphenyl group, etc.), N,N -dialkylacrylamide (the alkyl group preferably has 1 to 10 carbon atoms), N,N-arylacrylamide (the aryl group includes, for example, a phenyl group), N-methyl-N-phenylacrylamide, N-hydr and oxyethyl-N-methylacrylamide and N-2-acetamideethyl-N-acetylacrylamide.

Specific examples of the methacrylamides include methacrylamide, N-alkyl methacrylamide (the alkyl group preferably has 1 to 10 carbon atoms, for example, a methyl group, an ethyl group, a t-butyl group, an ethylhexyl group, a hydroxyethyl group, cyclohexyl group, etc.), N-aryl methacrylamide (the aryl group includes a phenyl group), N,N-dialkyl methacrylamide (the alkyl group includes an ethyl group, a propyl group, and a butyl group) , N,N-diarylmethacrylamide (there are phenyl groups as aryl groups), N-hydroxyethyl-N-methylmethacrylamide, N-methyl-N-phenylmethacrylamide, N-ethyl-N- and phenylmethacrylamide.

Specific examples of the allyl compound include allyl esters (for example, allyl acetate, allyl caproate, allyl caprylate, allyl laurate, allyl palmitate, allyl stearate, allyl benzoate, allyl acetoacetate, allyl lactate, etc.) , and allyloxyethanol.

Specific examples of vinyl ethers include alkyl vinyl ethers (eg, hexyl vinyl ether, octyl vinyl ether, decyl vinyl ether, ethylhexyl vinyl ether, methoxyethyl vinyl ether, ethoxyethyl vinyl ether, chloroethyl vinyl ether, 1- Methyl-2,2-dimethylpropyl vinyl ether, 2-ethylbutyl vinyl ether, hydroxyethyl vinyl ether, diethylene glycol vinyl ether, dimethylaminoethyl vinyl ether, diethylaminoethyl vinyl ether, butylaminoethyl vinyl ether, benzyl vinyl ether, tetrahydrofurfuryl vinyl ether, etc.), vinyl aryl ether (e.g. vinyl phenyl ether, vinyl tolyl ether, vinyl chlorophenyl ether, vinyl-2,4-dichlorophenyl ether, vinyl naphthyl ether, vinyl anthranyl ether, etc.).

Specific examples of vinyl esters include vinyl butyrate, vinyl isobutylate, vinyl trimethyl acetate, vinyl diethyl acetate, vinyl valate, vinyl caproate, vinyl chloro acetate, vinyl dichloro acetate, vinyl methoxy acetate, and vinyl butoxy acetate. , vinylphenyl acetate, vinylacetoacetate, vinyllactate, vinyl-β-phenylbutyrate, vinyl benzoate, vinyl salicylate, vinyl chlorobenzoate, vinyl tetrachlorobenzoate, and vinyl naphthoate.

Specific examples of the styrene include styrene, alkyl styrene (eg, methyl styrene, dimethyl styrene, trimethyl styrene, ethyl styrene, diethyl styrene, isopropyl styrene, butyl styrene, hexyl styrene, cyclohexyl styrene, decyl styrene, benzyl styrene, Chloromethylstyrene, trifluoromethylstyrene, ethoxymethylstyrene, acetoxymethylstyrene, etc.), alkoxystyrene (eg methoxystyrene, 4-methoxy-3-methylstyrene, dimethoxystyrene, etc.), halogen styrene (For example, chlorostyrene, dichlorostyrene, trichlorostyrene, tetrachlorostyrene, pentachlorostyrene, bromine styrene, dibromine styrene, iodine styrene, fluorostyrene, trifluorostyrene, 2-bromine-4-trifluoro methylstyrene, 4-fluoro-3-trifluoromethylstyrene, etc.) are mentioned. Moreover, acrylonitrile, methacrylonitrile, etc. are mentioned.

In this embodiment, it is preferable that the copolymer (A) consists of the said structural units (A1), (A2), and (A3).

It is preferable that it is 2000-50000, and, as for the mass average molecular weight (Mw: measured value by polystyrene conversion of gel permeation chromatography (GPC)) of the said copolymer (A), it is more preferable that it is 5000-30000. By making molecular weight into 2000 or more, it becomes possible to form into a film|membrane easily. Moreover, by setting it as molecular weight 50000 or less, it becomes possible to obtain moderate alkali solubility.

The said copolymer can be manufactured by well-known radical polymerization. That is, it can manufacture by heat-stirring, after melt|dissolving the polymerizable monomer which guide|induced the said structural unit (A1)-(A3), etc., and a well-known radical polymerization initiator in a polymerization solvent.

Moreover, alkali-soluble resin (A) may contain 1 or more types of other copolymers other than the copolymer containing the said structural unit (A1) - (A3). It is preferable that it is 0-50 mass parts with respect to 100 mass parts of said copolymers (A), and, as for this copolymer, it is more preferable that it is 0-30 mass parts. It is preferable that it is 2000-50000, and, as for the mass average molecular weight (Mw: measured value by polystyrene conversion of gel permeation chromatography (GPC)) of this copolymer, it is more preferable that it is 5000-30000.

[Photosensitizer (B)]

Although it will not specifically limit if it is a compound which can be used as a photosensitive component as a photosensitizer (B) in this embodiment, A quinonediazide group containing compound is mentioned as a preferable example.

Specific examples of the quinonediazide group-containing compound include complete and partial esterification of a phenol compound (also referred to as a phenolic hydroxyl group-containing compound) and a naphthoquinonediazidesulfonic acid compound.

Specific examples of the phenol compound include polyhydroxybenzophenones such as 2,3,4-trihydroxybenzophenone and 2,3,4,4'-tetrahydroxybenzophenone; Tris(4-hydroxyphenyl)methane, bis(4-hydroxy-3-methylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-2,3,5-trimethylphenyl)-2-hydroxy Phenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)-4-hydroxyphenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)-3-hydroxyphenylmethane, bis(4 -Hydroxy-3,5-dimethylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-4-hydroxyphenylmethane, bis(4-hydroxy-2, 5-dimethylphenyl)-3-hydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)- 3,4-dihydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-3,4-dihydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)- 2,4-dihydroxyphenylmethane, bis(4-hydroxyphenyl)-3-methoxy-4-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-4- Hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-3-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-2-hydroxy Phenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-3,4-dihydroxyphenylmethane, 4,4'-[(3,4-dihydroxyphenyl)methylene]bis( trisphenol-type compounds such as 2-cyclohexyl-5-methylphenol);

2,4-bis(3,5-dimethyl-4-hydroxybenzyl)-5-hydroxyphenol, 2,6-bis(2,5-dimethyl-4-hydroxybenzyl)-4-methylphenol, etc. linear trinuclear phenolic compounds; 1,1-bis[3-(2-hydroxy-5-methylbenzyl)-4-hydroxy-5-cyclohexylphenyl]isopropane, bis[2,5-dimethyl-3-(4-hydroxy- 5-methylbenzyl)-4-hydroxyphenyl]methane, bis[2,5-dimethyl-3-(4-hydroxybenzyl)-4-hydroxyphenyl]methane, bis[3-(3,5-dimethyl) -4-hydroxybenzyl)-4-hydroxy-5-methylphenyl]methane, bis[3-(3,5-dimethyl-4-hydroxybenzyl)-4-hydroxy-5-ethylphenyl]methane, bis [3-(3,5-diethyl-4-hydroxybenzyl)-4-hydroxy-5-methylphenyl]methane, bis[3-(3,5-diethyl-4-hydroxybenzyl)-4- Hydroxy-5-ethylphenyl]methane, bis[2-hydroxy-3-(3,5-dimethyl-4-hydroxybenzyl)-5-methylphenyl]methane, bis[2-hydroxy-3-(2) -Hydroxy-5-methylbenzyl)-5-methylphenyl]methane, bis[4-hydroxy-3-(2-hydroxy-5-methylbenzyl)-5-methylphenyl]methane, bis[2,5-dimethyl linear tetranuclear phenolic compounds such as -3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane; 2,4-bis[2-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, 2,4-bis[4-hydroxy-3-(4-hydroxy Roxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, 2,6-bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxybenzyl]-4 - Linear polyphenol compounds, such as a linear type pentanuclear phenol compound, such as methylphenol;

Bis(2,3,4-trihydroxyphenyl)methane, bis(2,4-dihydroxyphenyl)methane, 2,3,4-trihydroxyphenyl-4'-hydroxyphenylmethane, 2-( 2,3,4-trihydroxyphenyl)-2-(2', 3',4'-trihydroxyphenyl)propane, 2-(2,4-dihydroxyphenyl)-2-(2', 4'-dihydroxyphenyl)propane, 2-(4-hydroxyphenyl)-2-(4'-hydroxyphenyl)propane, 2-(3-fluoro-4-hydroxyphenyl)-2-( 3'-Fluoro-4'-hydroxyphenyl)propane, 2-(2,4-dihydroxyphenyl)-2-(4'-hydroxyphenyl)propane, 2-(2,3,4-tri Hydroxyphenyl)-2-(4'-hydroxyphenyl)propane, 2-(2,3,4-trihydroxyphenyl)-2-(4'-hydroxy-3',5'-dimethylphenyl) bisphenol-type compounds such as propane; 1-[1-(4-hydroxyphenyl)isopropyl]-4-[1,1-bis(4-hydroxyphenyl)ethyl]benzene, 1-[1-(3-methyl-4-hydroxyphenyl) ) polynuclear branched compounds such as isopropyl]-4-[1,1-bis(3-methyl-4-hydroxyphenyl)ethyl]benzene; Condensed phenol compounds, such as 1, 1-bis (4-hydroxyphenyl) cyclohexane, etc. are mentioned. These can be used individually or in combination of 2 or more types.

Moreover, as said naphthoquinonediazidesulfonic acid compound, naphthoquinone-1,2-diazide-5-sulfonic acid, naphthoquinone-1,2-diazide-4-sulfonic acid, etc. are mentioned.

Further, other quinonediazide group-containing compounds, for example, orthobenzoquinonediazide, orthonaphthoquinonediazide, orthoanthraquinonediazide, or these nuclear-substituted derivatives such as orthonaphthoquinonediazidesulfonic acid esters can be mentioned. have. Furthermore, orthoquinonediazidesulfonylchloride and a compound having a hydroxyl group or an amino group (for example, phenol, p-methoxyphenol, dimethylphenol, hydroquinone, bisphenol A, naphthol, pyrocatechol, pyrogallol, pyrogallol monomethyl Ethers, pyrogallol-1,3-dimethyl ether, gallic acid, reaction products of gallic acid, aniline, p-aminodiphenylamine, etc.) that have been esterified or etherified with a part of hydroxyl group can also be used. These may be used individually or in combination of 2 or more types.

These quinonediazide group-containing compounds include, for example, a trisphenol-type compound and naphthoquinone-1,2-diazide-5-sulfonyl chloride or naphthoquinone-1,2-diazide 4-sulfonyl chloride. It can be produced by condensing in a suitable solvent such as dioxane in the presence of an alkali such as triethanolamine, alkali carbonate, or alkali hydrogen carbonate, followed by complete esterification or partial esterification.

Moreover, as said (B) component, it is preferable to use a non-benzophenone-type quinonediazide group containing compound, and it is preferable to use a polynuclear branched compound. Moreover, as for this phenolic hydroxyl-containing compound, it is preferable that the gram extinction coefficient in the wavelength of 350 nm is 1 or less. Thereby, a higher sensitivity is obtained with the photosensitive resin composition.

As such component (B), a quinonediazide group-containing compound is preferable, and a naphthoquinonediazidesulfonate ester product is particularly preferable. Among them, 4,4'-[(3,4-dihydroxyphenyl)methylene]bis(2-cyclohexyl-5-methylphenol), 1-[1-(4-hydroxyphenyl)isopropyl]- Naphthoquinone diazide sulfonate ester products such as 4-[1,1-bis(4-hydroxyphenyl)ethyl]benzene can be suitably used.

(B) As for content of component, 10-40 mass % is preferable with respect to all solid components, More preferably, it is 15-30 mass %. (B) By making content of a component into 10 mass % or more, it becomes possible to improve a resolution. Moreover, it becomes possible to reduce the film|membrane decrease amount of a pattern after formation of a pattern. Moreover, by making content of (B) component into 40 mass % or less, it becomes possible to provide moderate sensitivity and transmittance|permeability.

[Organic solvent (S)]

The positive resist composition according to the present embodiment preferably contains an organic solvent (S) in order to improve applicability or adjust viscosity.

(S) As component, benzene, toluene, xylene, methyl ethyl ketone, acetone, methyl isobutyl ketone, cyclohexanone, methanol, ethanol, propanol, butanol, hexanol, cyclohexanol, ethylene glycol, diethylene glycol, glycerin, Ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether (PGME), propylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol Diethyl ether, 3-methoxybutyl acetate (MA), 3-methoxybutanol (BM), 3-methyl-3-methoxybutyl acetate, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether pro cionate, propylene glycol monoethyl ether propionate, methyl carbonate, ethyl carbonate, propyl carbonate, butyl carbonate, or a mixture thereof. Among them, it is preferable to use PGME, PGMEA, MA, a mixed solvent of PGME and PGMEA, a mixed solvent of MA and BM, and the like.

Although the usage-amount of the organic solvent (S) is not specifically limited, It is set suitably according to the coating film thickness at the density|concentration which can be apply|coated to a board|substrate etc. Specifically, it is preferable to use so that solid content concentration of the photosensitive resin composition may be in the range of 10-50 mass %, especially 15-35 mass %.

[Optional Ingredients]

(black pigment)

In the present embodiment, the positive resist composition may contain a black pigment in order to increase the light absorptivity of the barrier ribs.

As a black pigment, the thing similar to the black pigment in the said black resist is mentioned.

When using a black pigment, as for content of a black pigment, 1 % - 10% are preferable with respect to a nonvolatile component.

By carrying out content of a black pigment in the said range, the light absorptivity of a partition can fully be improved.

(yellow pigment)

In the present embodiment, the positive resist composition may contain a yellow pigment other than blue (B) in order to prevent a decrease in color purity due to incorporation into sub-pixels.

As a yellow pigment, C.I. Pigment Yellow 1 (hereinafter, "C.I. Pigment Yellow" is the same and only numbers are described), 3, 11, 12, 13, 14, 15, 16, 17, 20, 24, 31, 53, 55, 60, 61, 65, 71, 73, 74, 81, 83, 86, 93, 95, 97, 98, 99, 100, 101, 104, 106, 108, 109, 110, 113, 114, 116, 117, 119, 120, 125, 126, 127, 128, 129, 137, 138, 139, 147, 148, 150, 151, 152, 153, 154, 155, 156, 166, 167, 168, 175, 180, 185, etc. can

When using a yellow pigment, as for content of a yellow pigment, 1 % - 10% are preferable with respect to a non-volatile component.

By carrying out content of a yellow pigment in the said range, the fall of the color purity by mixing to a subpixel other than blue (B) can fully be prevented.

(inorganic particles)

In the present embodiment, the positive resist composition may contain inorganic particles in order to impart light scattering properties to the barrier ribs.

As the inorganic particles, for example, glass, ceramics (such as cordierite), metal or the like can be used. Specifically, PbO-SiO ₂ , PbO-B ₂ O ₃ -SiO ₂ , ZnO-SiO ₂ , ZnO-B ₂ O ₃ -SiO ₂ , BiO-SiO ₂ , BiO-B ₂ O ₃ - Glass powders such as SiO ₂ type lead borosilicate glass, zinc borosilicate glass, and bismuth borosilicate glass, cobalt oxide, iron oxide, chromium oxide, nickel oxide, copper oxide, manganese oxide, neodymium oxide, vanadium oxide, cerium oxide, cadmium oxide, Each oxide such as Na, K, Mg, Ca, Ba, Ti, Zr, Al, such as ruthenium oxide, silica, magnesia, spinel, etc., ZnO:Zn, Zn ₃ (PO ₄ ) ₂ :Mn, Y ₂ SiO ₅ :Ce, CaWO ₄ :Pb, BaMgAl ₁₄ O ₂₃ :Eu, ZnS:(Ag,Cd), Y ₂ O ₃ :Eu, Y ₂ SiO ₅ :Eu, Y ₃ A ₁₅ O ₁₂ :Eu, YBO ₃ :Eu, (Y ,Gd)BO ₃ :Eu, GdBO ₃ :Eu, ScBO ₃ :Eu, LuBO ₃ :Eu, Zn ₂ SiO ₄ :Mn, BaAl ₁₂ O ₁₉ :Mn, SrAl ₁₃ O ₁₉ :Mn, CaAl ₁₂ O ₁₉ :Mn , YBO ₃ :Tb, BaMgAl ₁₄ O ₂₃ :Mn, LuBO ₃ :Tb, GdBO:Tb, ScBO ₃ :Tb, Sr ₆ Si ₃ O ₃ C _l4 :Eu, ZnS:(Cu,Al), ZnS:Ag, Phosphor powders such as Y ₂ O ₂ S:Eu, ZnS:Zn, (Y,Cd)BO ₃ :Eu, BaMgAl ₁₂ O ₂₃ :Eu, iron, nickel, palladium, tungsten, copper, aluminum, silver, gold, platinum metal powder, such as these, etc. are mentioned.

Among them, silica and titanium dioxide (TiO ₂ ) are preferable.

0.1 micrometer - 1 micrometer are preferable and, as for the average particle diameter of an inorganic particle, 0.2-0.5 micrometer is more preferable. When the average particle diameter of an inorganic particle is in the said range, sufficient light-scattering property can be provided to a partition.

When using an inorganic particle, 2 to 20 % is preferable with respect to 100 mass parts of alkali-soluble resin (A), and, as for content of an inorganic particle, 5 to 10 % is more preferable.

When content of an inorganic particle is in the said range, sufficient light-scattering property can be provided to a partition, maintaining lithography performance.

[Urethane oligomer (U)]

In the present embodiment, the positive resist composition may contain the urethane oligomer (U) having two or more polymerizable functional groups.

As a urethane oligomer (U), the (meth)acrylate compound which has a urethane bond is preferable, and the urethane (meth)acrylate whose functional group number is 3 or more is more preferable.

The number of functional groups is 3 or more urethane (meth)acrylate means what has a urethane bond (-NH-CO-O-) and 3 or more (meth)acryloyloxy groups in a molecule|numerator. The number of functional groups in the urethane (meth)acrylate is preferably 3 or more, more preferably 3 to 10, still more preferably 3 to 5, particularly preferably 3 or 4, and most preferably 3 (that is, the number of functional groups 3 urethane (meth)acrylate).

When using the urethane oligomer (U), the content of the urethane oligomer (U) is preferably 5% by mass or more, more preferably 10 to 60% by mass, still more preferably with respect to 100% by mass of the alkali-soluble resin (A). is 20-50 mass %.

[(F) component]

In the present embodiment, in order to impart water repellency to the resist film, the positive resist composition may contain a fluorine additive (hereinafter referred to as "component (F)").

If the resist film has water repellency, it is possible to prevent the inkjet from mixing into other sub-pixels in the case of forming a color filter by an inkjet method.

(F) As a component, it describes in Unexamined-Japanese-Patent No. 2010-002870, Unexamined-Japanese-Patent No. 2010-032994, Unexamined-Japanese-Patent No. 2010-277043, Unexamined-Japanese-Patent No. 2011-13569, and Unexamined-Japanese-Patent No. 2011-128226, for example. A fluorinated high molecular compound can be used.

In addition to the positive resist composition of the present embodiment, optional components include, for example, various additives such as a reaction accelerator, a silane coupling agent, a surfactant, a thermal acid generator, a crosslinking agent, a sensitizer, and an antifoaming agent.

<Step (C)>

In step (C), the resist film 3 is exposed from the transparent substrate 1 side (Fig. 1(e)). By exposing from the transparent substrate 1 side, the black matrix 2a functions as a mask, and only the area where the black matrix 2a is not formed between the resist film 3 and the transparent substrate 1 is exposed, The alkali-soluble region 3a can be formed.

The exposure is performed by, for example, irradiating the resist film 3 with active energy rays such as ultraviolet rays or excimer laser light from the transparent substrate 1 side.

Examples of the light source of the active energy ray include a low-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high pressure mercury lamp, a chemical lamp, an excimer laser generator, a UV laser such as a triple wave of YAG, and a double wave of a semiconductor laser.

Although the amount of energy to be irradiated varies depending on the composition of the positive resist composition, it may be, for example, 30 to 2000 mJ/cm ² .

<Step (D)>

In step (D), the resist film 3 after the exposure is developed to form a resist pattern. By development, the alkali-soluble region 3a is removed to form a resist pattern 3b (the barrier rib pattern 3b) on the black matrix 2a.

As a developing solution used for alkali development, organic aqueous alkali solutions, such as a tetramethylammonium hydroxide (TMAH) aqueous solution, or inorganic alkali aqueous solutions, such as sodium hydroxide, potassium hydroxide, sodium metasilicate, and sodium phosphate, are mentioned.

<Arbitrary process>

<Step (E)>

The method of forming the pattern for barrier ribs according to the present embodiment may further include a step (E) of thermosetting the resist pattern 3b.

The resist pattern is heated, for example, at a temperature of 300°C or lower, preferably at 90 to 250°C. In this embodiment, it can be easily hardened|cured at a lower temperature condition, Preferably it can harden easily at 220 degrees C or less.

From the viewpoint of maintaining the verticality of the resist pattern, it is preferable to perform the thermosetting in the step (E) in two or more steps. When performing thermosetting in two or more steps, it is preferable to raise the thermosetting temperature for every step. For example, after heating at 90-150 degreeC for 20-40 minutes, it can heat at 180-300 degreeC for 50-70 minutes.

<Step (C1)>

The formation method of the pattern for barrier ribs which concerns on this embodiment may have a process (C1) of heat-processing (post-exposure heat processing) between a process (C) and a process (D) as needed.

In this embodiment, a positive resist composition having thermosetting ability is applied on a black matrix pattern and exposed from the transparent substrate side. Therefore, the black matrix pattern functions as a mask, and a resist pattern (barrier) can be formed with good alignment precision with a black matrix pattern.

In addition, the method for forming a pattern for barrier ribs according to the present embodiment is particularly useful for forming a pattern for barrier ribs of a display element in which a quantum dot phosphor is embedded.

When a quantum dot phosphor is used, dissolution resistance to an organic liquid is required. In this embodiment, since the positive resist composition having thermosetting ability is used, the formed barrier rib pattern is excellent in dissolution resistance to organic liquids.

Moreover, according to this embodiment, the pattern for barrier ribs of a shape with high perpendicularity with respect to a transparent substrate can be formed.

[ Example ]

Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited by these examples.

(Example 1)

<Adjustment of the resist>

4-hydroxyphenyl methacrylate: 40 parts by weight, methyl methacrylate: 40 parts by weight, 3,4-epoxycyclohexylmethyl methacrylate: mixed in a ratio of 20 parts by weight and radically polymerized in an organic solvent (PGMEA) Polymer A was obtained.

Naphthoquinonediazide-5 to 4,4'-[(3,4-dihydroxyphenyl)methylene]bis(2-cyclohexyl-5-methylphenol) with respect to 75 parts by weight of the solid content of the polymer liquid obtained above - PGMEA and PGME were added so that 25 parts by weight of the reacted sulfonic acid ester (esterification rate 80%) and 200 parts by mass as a solvent in a ratio of PGMEA/PGME=60/40 were added to obtain a resist A.

<Formation of pattern>

A black resist (product name: CFPR BK-461; manufactured by Tokyooka Kogyo Co., Ltd.) was applied onto a glass substrate so as to have a film thickness of 2.0 µm by spin coating, followed by baking at 100°C for 2 minutes. This substrate was exposed to a light quantity of 150 mJ/cm ² from an ultra-high pressure mercury lamp through a photomask, developed with a 0.04% KOH aqueous solution, washed, and heat cured to obtain a substrate on which a light blocking layer (black matrix pattern) with black photoresist was formed. . Resist A was applied to the surface on which the light-shielding layer was formed to a thickness of 10 µm by spin coating, and ultraviolet rays obtained from a high-pressure mercury lamp were irradiated from the substrate surface side at 1000 mJ/cm ² . After that, development was performed twice for 1 minute in TMAH 2.38% aqueous solution, and as a heat cure, on a hot plate in three steps of (1) 100°C, 30 minutes, (2) 120°C, 30 minutes, (3) 200°C, 60 minutes baked with As a result, the resist A had a shape with high verticality and was resolved to a pattern dimension of 5 µm. Moreover, as for the resist pattern, the alignment precision with a black matrix pattern was formed favorably.

This patterned substrate was immersed in PGMEA for 1 minute, but no change in resist shape was observed.

(Example 2)

<Adjustment of the resist>

To the resist A prepared in Example 1, 100 parts by weight of the nonvolatile matter of the resist A, 100 parts by weight of silica particles (particle diameter of 300 nm), and 100 parts by weight of PGME were mixed, followed by stirring with a planetary mixer to obtain a resist B.

<Formation of pattern>

On the board|substrate patterned with black resist similarly to Example 1, the resist B was apply|coated, and exposure, development, and heat curing were performed at 700 mJ/cm< ² >. As a result, the resist B was resolved to a minimum dimension of 8 µm. Moreover, as for the resist pattern, the alignment precision with a black matrix pattern was formed favorably.

(Comparative Example 1)

A positive resist (product name: PMER P-7130; Tokyooka Kogyo Co., Ltd.) was applied to a substrate patterned with black resist in the same manner as in Example 1 to a thickness of 2.0 µm by spin coating, and ultraviolet rays obtained from a high-pressure mercury lamp were applied to the substrate surface side. 300 mJ/cm ² was irradiated, and development was performed in a 2.38% TMAH aqueous solution. As a result of immersing the patterned substrate in PGMEA for 1 minute, the resist was completely peeled off.

(Comparative Example 2)

A high concentration product (solid content concentration 35%) of positive resist (product name: PMER P-7130; manufactured by Tokyooka Kogyo Co., Ltd.) was applied to a substrate patterned with black resist in the same manner as in Example 1 to a thickness of 10 μm by spin coating, Ultraviolet rays obtained from a high-pressure mercury lamp were irradiated from the substrate surface side at 1000 mJ/cm ² , and development was performed in a 2.38% TMAH aqueous solution. Then, it baked on a hot plate as a thermal cure in 3 steps of (1) 100 degreeC, 30 minutes, (2) 120 degreeC, 30 minutes, (3) 200 degreeC, and 60 minutes. As a result, the resist shape became a lens shape with a strong taper angle from the substrate interface.

In addition, as a result of immersing the patterned substrate in PGMEA for 1 minute, a decrease in the resist film thickness was confirmed.

(Comparative Example 3)

The resist B prepared in Example 2 was apply|coated to the board|substrate which patterned the black resist similarly to Example 1. The resist B was exposed at 700 mJ/cm ² from the resist B surface side (opposite to the substrate surface) through a mask patterned with black resist, and developed in a 2.38% TMAH aqueous solution for 1 minute. After that, development and heat curing were performed in the same manner as in Example 1. As a result, the largest 100-micrometer-sized pattern in a mask was not resolved either.

Moreover, when exposing the resist B, an attempt was made to align the black resist pattern and the mask below, but it was difficult to align the black resist pattern and the mask because the resist B was strong white.

Claims (7)

A method of forming a pattern for barrier ribs of a display device in which a light emitting body for each color is embedded in at least a portion of a sub-pixel, the method comprising:
A process (A) of patterning a black resist on a transparent substrate;
A step (B) of forming a resist film by applying a positive resist composition having thermosetting ability on the transparent substrate patterned with the black resist;
a step (C) of exposing the resist film from the transparent substrate side;
Step (D) of developing the resist film after the exposure to form a resist pattern
To have,
The positive resist composition contains an alkali-soluble resin (A) and a photosensitizer (B),
The alkali-soluble resin (A) is a structural unit (A1) represented by the following general formula (a-1), a structural unit (A2) represented by the following general formula (a-2), and an alicyclic epoxy group-containing unit (A3) A method of forming a pattern for barrier ribs containing
[Tue 1]

...(a-1)
[In the above general formula, R represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and Ra ⁰¹ represents an organic group having a hydrogen atom or a hydroxyl group.]
[Tue 2]

...(a-2)
[R represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and Rb is a hydrocarbon group.] The method according to claim 1,
A method of forming a pattern for barrier ribs further comprising a step (E) of thermosetting the resist pattern. The method according to claim 1,
A method of forming a pattern for barrier ribs in which the light emitting body for each color is a quantum dot phosphor. The method according to claim 1,
A method of forming a pattern for barrier ribs, wherein the resist film has a thickness of 6 µm or more. 5. The method according to any one of claims 1 to 4,
The method for forming a pattern for barrier ribs, wherein the positive resist composition further contains inorganic particles having an average particle diameter of 0.1 to 1 µm. The method according to claim 1,
The photosensitizer (B) includes a quinonediazide group-containing compound, a method of forming a pattern for barrier ribs. delete

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