TWI824252B - 使用於微影設備中之基板固持器及製造基板固持器之方法 - Google Patents
使用於微影設備中之基板固持器及製造基板固持器之方法 Download PDFInfo
- Publication number
- TWI824252B TWI824252B TW110120555A TW110120555A TWI824252B TW I824252 B TWI824252 B TW I824252B TW 110120555 A TW110120555 A TW 110120555A TW 110120555 A TW110120555 A TW 110120555A TW I824252 B TWI824252 B TW I824252B
- Authority
- TW
- Taiwan
- Prior art keywords
- coating
- substrate holder
- substrate
- range
- knobs
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 255
- 238000004519 manufacturing process Methods 0.000 title description 18
- 238000000576 coating method Methods 0.000 claims abstract description 163
- 239000011248 coating agent Substances 0.000 claims abstract description 139
- 238000000034 method Methods 0.000 claims abstract description 89
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims abstract description 80
- 239000000463 material Substances 0.000 claims abstract description 47
- 239000002243 precursor Substances 0.000 claims abstract description 25
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims description 76
- 230000007797 corrosion Effects 0.000 claims description 32
- 238000005260 corrosion Methods 0.000 claims description 32
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 22
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 22
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 22
- 238000001459 lithography Methods 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 20
- 229910003460 diamond Inorganic materials 0.000 claims description 13
- 239000010432 diamond Substances 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 238000000970 chrono-amperometry Methods 0.000 claims description 11
- 239000011780 sodium chloride Substances 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 238000007373 indentation Methods 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 33
- 230000005855 radiation Effects 0.000 description 17
- 238000000059 patterning Methods 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 8
- 238000006731 degradation reaction Methods 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 239000007787 solid Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- 206010028980 Neoplasm Diseases 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000008199 coating composition Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 239000006094 Zerodur Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063036028P | 2020-06-08 | 2020-06-08 | |
| US63/036,028 | 2020-06-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202212984A TW202212984A (zh) | 2022-04-01 |
| TWI824252B true TWI824252B (zh) | 2023-12-01 |
Family
ID=76269711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110120555A TWI824252B (zh) | 2020-06-08 | 2021-06-07 | 使用於微影設備中之基板固持器及製造基板固持器之方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP4162324A1 (ja) |
| JP (1) | JP7477652B2 (ja) |
| KR (1) | KR20230007508A (ja) |
| CN (1) | CN115698864A (ja) |
| TW (1) | TWI824252B (ja) |
| WO (1) | WO2021249768A1 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4318133A1 (en) | 2022-08-05 | 2024-02-07 | ASML Netherlands B.V. | System, apparatus and method for selective surface treatment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090142615A1 (en) * | 2006-08-10 | 2009-06-04 | Carl Zeiss Smt Ag | Composite structure for microlithography and optical arrangement |
| TWM525544U (zh) * | 2014-05-19 | 2016-07-11 | 應用材料股份有限公司 | 具有類金剛石碳塗層的基板載體 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5523193A (en) | 1988-05-31 | 1996-06-04 | Texas Instruments Incorporated | Method and apparatus for patterning and imaging member |
| JP2938568B2 (ja) | 1990-05-02 | 1999-08-23 | フラウンホファー・ゲゼルシャフト・ツール・フォルデルング・デル・アンゲバンテン・フォルシュング・アインゲトラーゲネル・フェライン | 照明装置 |
| US5229872A (en) | 1992-01-21 | 1993-07-20 | Hughes Aircraft Company | Exposure device including an electrically aligned electronic mask for micropatterning |
| US6468642B1 (en) | 1995-10-03 | 2002-10-22 | N.V. Bekaert S.A. | Fluorine-doped diamond-like coatings |
| WO1998028665A1 (en) | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device |
| JP4220968B2 (ja) | 2005-01-06 | 2009-02-04 | 三菱重工業株式会社 | アモルファスカーボン膜被覆基材及びアモルファスカーボン膜の成膜方法 |
| US20080138504A1 (en) * | 2006-12-08 | 2008-06-12 | Coorstek, Inc. | Coatings for components of semiconductor wafer fabrication equipment |
| BR112017028386B1 (pt) | 2015-07-03 | 2021-12-28 | Tetra Laval Holdings & Finance S.A. | Método para fabricação de uma película ou trama de barreira, material de acondicionamento laminado, e, recipiente de acondicionamento |
| EP3707559B1 (en) | 2017-11-08 | 2023-04-19 | ASML Netherlands B.V. | A substrate holder and a method of manufacturing a device |
| KR102172221B1 (ko) * | 2018-07-31 | 2020-10-30 | 주식회사 시엠테크놀로지 | Dlc 코팅층을 구비한 펠리클 수납용기 |
-
2021
- 2021-05-25 KR KR1020227043099A patent/KR20230007508A/ko unknown
- 2021-05-25 JP JP2022571839A patent/JP7477652B2/ja active Active
- 2021-05-25 CN CN202180041129.5A patent/CN115698864A/zh active Pending
- 2021-05-25 EP EP21729829.8A patent/EP4162324A1/en active Pending
- 2021-05-25 WO PCT/EP2021/063942 patent/WO2021249768A1/en unknown
- 2021-06-07 TW TW110120555A patent/TWI824252B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090142615A1 (en) * | 2006-08-10 | 2009-06-04 | Carl Zeiss Smt Ag | Composite structure for microlithography and optical arrangement |
| TWM525544U (zh) * | 2014-05-19 | 2016-07-11 | 應用材料股份有限公司 | 具有類金剛石碳塗層的基板載體 |
Non-Patent Citations (1)
| Title |
|---|
| 期刊 Su Cheng, Xing Zhao, Guang Yang, Yiguang Wang Salt-fog corrosion behavior of C/SiC and its effect on ablation resistance Journal of Materials Science & Technology 35 ELSEVIER 20190808 2772-2777 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202212984A (zh) | 2022-04-01 |
| CN115698864A (zh) | 2023-02-03 |
| JP7477652B2 (ja) | 2024-05-01 |
| EP4162324A1 (en) | 2023-04-12 |
| KR20230007508A (ko) | 2023-01-12 |
| WO2021249768A1 (en) | 2021-12-16 |
| JP2023529577A (ja) | 2023-07-11 |
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