TWI817588B - A pixel circuit with a biological identification function - Google Patents
A pixel circuit with a biological identification function Download PDFInfo
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- 239000003990 capacitor Substances 0.000 claims abstract description 68
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- 238000004891 communication Methods 0.000 claims description 28
- 238000005070 sampling Methods 0.000 claims description 23
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
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- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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Abstract
Description
本發明係有關於一種畫素電路,尤其係指一種具有生物辨識功能的畫素電路。 The present invention relates to a pixel circuit, and in particular, to a pixel circuit with a biometric recognition function.
在現有技術中,指紋辨識裝置的畫素陣列與畫素電路因應不同功能而有不同的設計。圖1係繪示先前技術之具有指紋辨識功能的畫素電路示意圖。圖2係繪示先前技術之具有指紋辨識功能的畫素電路示意圖。圖3係繪示先前技術之具有指紋辨識功能的畫素陣列示意圖。圖4係繪示先前技術之具有指紋辨識功能的畫素示意圖。通常,每一列畫素或行畫素都會有各自的電子元件或走線,例如,如圖1所示之畫素電路100中,列畫素N有掃描線S_N、重置線RST_N、儲存電容C1_N、儲存電容C2_N、電晶體T1_N、電晶體T2_N、電晶體T3_N、電晶體T4_N、接地VP、取樣開關、二極體D_N、壓電材料10、通訊輸出TRX_N以及讀出線;列畫素N+1有掃描線S_N+1、重置線RST_N+1、儲存電容C1_N+1、儲存電容C2_N+1、電晶體T1_N+1、電晶體T2_N+1、電晶體T3_N+1、電晶體T4_N+1、接地VP、取樣開關、二極體D_N+1、壓電材料10、通訊輸出TRX_N+1
以及讀出線。另外,如圖2所示,在畫素電路200中,有掃描線S_N、掃描線S_N+1、儲存電容C、電晶體DT、壓電材料20、電晶體M1、電晶體T4_N、接地VP、二極體D1、通訊輸出TRX_N以及讀出線。
In the prior art, the pixel array and pixel circuit of the fingerprint recognition device have different designs according to different functions. FIG. 1 is a schematic diagram of a pixel circuit with a fingerprint recognition function in the prior art. FIG. 2 is a schematic diagram of a pixel circuit with a fingerprint recognition function in the prior art. FIG. 3 is a schematic diagram of a pixel array with fingerprint recognition function in the prior art. FIG. 4 is a schematic diagram of a pixel with a fingerprint recognition function in the prior art. Usually, each column of pixels or row of pixels has its own electronic components or wiring. For example, in the
另外,圖3對應圖1,以2*2的畫素陣列100’為例說明,列畫素N、列畫素N+1各有兩個畫素,每個畫素分別有感應區103a、103b、103c、103d,各自與圖1的元件以及走線對應。另外,圖4對應圖2,以1*1的畫素陣列200’為例說明,畫素陣列200’有感應區230、掃描線S_N、掃描線S_N+1、導通孔Via_1、導通孔Via_2,在此不贅述。
In addition, Figure 3 corresponds to Figure 1, taking a 2*2 pixel array 100' as an example. Column pixel N and column pixel N+1 each have two pixels, and each pixel has a
然而,隨著應用功能增加而電路漸趨複雜,便對所需電路增多導致解鎖面積變大,解鎖精準度需提升等等趨勢,使畫素線路需更多設計為共用線路的方式。 However, as application functions increase and circuits become increasingly complex, the required circuits increase, resulting in a larger unlocking area and improved unlocking accuracy. This requires more pixel circuits to be designed as shared circuits.
綜上所述,如何提供一種能符合上述需求的指紋辨識裝置,乃是業界所需解決的課題。 To sum up, how to provide a fingerprint identification device that can meet the above requirements is a problem that the industry needs to solve.
鑒於上述內容,本揭露之一態樣係提供一種具有生物辨識功能的畫素電路1000,配置於一陣列基板上,該陣列基板具有複數列畫素與複數行畫素組成的一畫素陣列,該具有生物辨識功能的畫素電路的特徵在於:每兩相鄰的列畫素共用一條掃描線;每兩相鄰的列畫素共用一個儲存電容;以及每兩相鄰的列畫素共用一條重置線。
In view of the above, one aspect of the present disclosure provides a
根據本揭露之一個或多個實施方式,其中該兩相鄰列的一第一通訊輸出與一第二通訊輸出透過該共用的儲存電容,由該共用的掃描線取出資料,而該共用的重置線重置該儲存電容。 According to one or more embodiments of the present disclosure, a first communication output and a second communication output of the two adjacent columns retrieve data from the common scan line through the shared storage capacitor, and the shared reuse Setting the line resets the storage capacitor.
根據本揭露之一個或多個實施方式,其中該兩相鄰列的一第一通訊輸出與一第二通訊輸出於不同時間,分別透過該共用的儲存電容儲存一取樣電位,由該共用的掃描線取出資料,而該共用的重置線重置該儲存電容。 According to one or more embodiments of the present disclosure, a first communication output and a second communication output of the two adjacent columns store a sampling potential through the shared storage capacitor at different times, and the shared scanning potential is line to retrieve data, and the shared reset line resets the storage capacitor.
根據本揭露之一個或多個實施方式,其中該兩相鄰列的一第一取樣開關與一第二取樣開關進行該兩相鄰列的指紋辨識的驅動。 According to one or more embodiments of the present disclosure, a first sampling switch and a second sampling switch of the two adjacent columns perform fingerprint recognition driving of the two adjacent columns.
根據本揭露之一個或多個實施方式,其中該兩相鄰列的一第一取樣開關與一第二取樣開關在一感應區外的一走線區域具有切換開啟的功能。 According to one or more embodiments of the present disclosure, a first sampling switch and a second sampling switch in two adjacent columns have a switching on function in a wiring area outside a sensing area.
根據本揭露之一個或多個實施方式,其中該兩相鄰列更包含:兩個二極體,分別具有一第一端以及一第二端;兩個第一電晶體,分別具有一控制端、一第一端以及一第二端,其中該些第一電晶體的各該控制端皆電耦接於該共用的重置線,而該些第一電晶體的各該第一端分別電耦接於一D-Bias以及各該二極體的各該第一端,且該些第一電晶體的各該第二端分別電耦接於各該二極體的各該第二端;一第二電晶體,具有一控制端、一第一端以及一第二端,其中該第二電晶體的該第一端接地;一第三電晶體,具有一控制端、一第一端以及一第二端,其中該第三電晶體的該控制端電耦接於該掃描線以及該共用的儲存電容的一第一端,而該第三電晶體的該第一端電耦接於該第二電晶體的該第二端,且該第三電晶體的該第二端電耦接於一電壓讀出線;一第一儲存電容,具有一第一端以及一第二端;一第二儲存電容,具有一第一端以及一第二端;兩個第四電晶體,分別具有一控制端、一第一端以及一第二端,其中各自的控制端分別電耦接於不同的取樣開關;其一該第四電晶體的該第一端電耦接於該第二電晶體的該控制端,且該第四電晶體的該第二端電耦接於該第一儲存電容的該第一端、其一該第一電晶體的該第二端以及其一該二極體的該第二端;另一該第四電晶體的該第一端電耦接於該共用的儲存電容的一第二端,且 該第四電晶體的該第二端電耦接於該第二儲存電容的該第一端、另一該第一電晶體的該第二端以及另一該二極體的該第二端;一第五壓電材料,具有一第一端以及一第二端,其中該第五壓電材料的該第一端電耦接於該第一儲存電容的該第二端,而該第五壓電材料的該第二端電耦接於一第一通訊輸出;以及一第六壓電材料,具有一第一端以及一第二端,其中該第六壓電材料的該第一端電耦接於該第二儲存電容的該第二端,而該第五壓電材料的該第二端電耦接於一第二通訊輸出。 According to one or more embodiments of the present disclosure, the two adjacent columns further include: two diodes, each having a first terminal and a second terminal; two first transistors, each having a control terminal. , a first terminal and a second terminal, wherein each control terminal of the first transistors is electrically coupled to the common reset line, and each first terminal of the first transistors is electrically connected respectively. is coupled to a D-Bias and each first terminal of each diode, and each second terminal of the first transistors is electrically coupled to each second terminal of each diode; a second transistor having a control terminal, a first terminal and a second terminal, wherein the first terminal of the second transistor is grounded; a third transistor having a control terminal, a first terminal and a second terminal, wherein the control terminal of the third transistor is electrically coupled to the scan line and a first terminal of the shared storage capacitor, and the first terminal of the third transistor is electrically coupled to the The second terminal of the second transistor, and the second terminal of the third transistor are electrically coupled to a voltage readout line; a first storage capacitor having a first terminal and a second terminal; a first Two storage capacitors have a first terminal and a second terminal; two fourth transistors respectively have a control terminal, a first terminal and a second terminal, wherein the respective control terminals are electrically coupled to different Sampling switch; the first terminal of the fourth transistor is electrically coupled to the control terminal of the second transistor, and the second terminal of the fourth transistor is electrically coupled to the first storage capacitor. The first terminal, the second terminal of the first transistor and the second terminal of the diode; the first terminal of the other fourth transistor is electrically coupled to the common storage a second terminal of the capacitor, and The second terminal of the fourth transistor is electrically coupled to the first terminal of the second storage capacitor, the second terminal of the other first transistor, and the second terminal of the other diode; A fifth piezoelectric material has a first end and a second end, wherein the first end of the fifth piezoelectric material is electrically coupled to the second end of the first storage capacitor, and the fifth piezoelectric material The second end of the electrical material is electrically coupled to a first communication output; and a sixth piezoelectric material has a first end and a second end, wherein the first end of the sixth piezoelectric material is electrically coupled The second end of the second storage capacitor is connected to the second end of the fifth piezoelectric material, and the second end of the fifth piezoelectric material is electrically coupled to a second communication output.
根據本揭露之一個或多個實施方式,其中該共用的掃描線、該共用的儲存電容共用的重置線乃是位於該兩相鄰的列畫素中的一列內。 According to one or more embodiments of the present disclosure, the shared scan line and the shared reset line of the shared storage capacitor are located in one of the two adjacent columns of pixels.
根據本揭露之一個或多個實施方式,其中相較於其一該列畫素而言,另一該列畫素內相對應畫素的透光區具有較大的透光面積。 According to one or more embodiments of the present disclosure, the light-transmitting area of the corresponding pixel in another column of pixels has a larger light-transmitting area than that of one of the column of pixels.
根據本揭露之一個或多個實施方式,其中該共用的重置線乃是位於該兩相鄰的列畫素之間。 According to one or more embodiments of the present disclosure, the common reset line is located between the two adjacent columns of pixels.
根據本揭露之一個或多個實施方式,其中該共用的重置線乃是位於該兩相鄰的列畫素的感應區外。 According to one or more embodiments of the present disclosure, the common reset line is located outside the sensing areas of the two adjacent columns of pixels.
100:畫素電路 100: Pixel circuit
N:列畫素 N: column of pixels
S_N:掃描線 S_N: scan line
RST_N:重置線 RST_N: reset line
C1_N:儲存電容 C1_N: storage capacitor
C2_N:儲存電容 C2_N: storage capacitor
T1_N:電晶體 T1_N: Transistor
T2_N:電晶體 T2_N: Transistor
T3_N:電晶體 T3_N: Transistor
T4_N:電晶體 T4_N: transistor
VP:接地 VP: ground
D_N:二極體 D_N: diode
10:壓電材料 10: Piezoelectric materials
TRX_N:通訊輸出 TRX_N: Communication output
N+1:列畫素 N+1: column of pixels
S_N+1:掃描線 S_N+1: scan line
RST_N+1:重置線 RST_N+1: reset line
C1_N+1:儲存電容 C1_N+1: storage capacitor
C2_N+1:儲存電容 C2_N+1: storage capacitor
T1_N+1:電晶體 T1_N+1: transistor
T2_N+1:電晶體 T2_N+1: transistor
T3_N+1:電晶體 T3_N+1: transistor
T4_N+1:電晶體 T4_N+1: transistor
D_N+1:二極體 D_N+1: Diode
TRX_N+1:通訊輸出 TRX_N+1: Communication output
200:畫素電路 200:Pixel circuit
S_N+1:掃描線 S_N+1: scan line
C:儲存電容 C: storage capacitor
DT:電晶體 DT: Transistor
20:壓電材料 20: Piezoelectric materials
M1:電晶體 M1: transistor
T4_N:電晶體 T4_N: Transistor
D1:二極體 D1: Diode
TRX_N:通訊輸出 TRX_N: Communication output
100’:畫素陣列 100’: pixel array
103a、103b、103c、103d:感應區 103a, 103b, 103c, 103d: sensing area
200’:畫素陣列 200’: Pixel array
230:感應區 230: Sensing area
Via_1、Via_2:導通孔 Via_1, Via_2: via holes
1000:畫素電路 1000: Pixel circuit
1000’:畫素陣列 1000’: pixel array
S22:掃描線 S22:Scan line
RST22:重置線 RST22: reset line
C22:儲存電容 C22: storage capacitor
T22:電晶體 T22: transistor
T33:電晶體 T33: transistor
I、II、III、IV:區域 I, II, III, IV: Area
D:二極體 D: Diode
T1:第一電晶體 T1: the first transistor
T2:第二電晶體 T2: Second transistor
T3:第三電晶體 T3: The third transistor
Vout(Rx):電壓讀出線 Vout(Rx): voltage readout line
C1_N:第一儲存電容 C1_N: first storage capacitor
C1_N+1:第二儲存電容 C1_N+1: second storage capacitor
T4A、T4B:第四電晶體 T4A, T4B: the fourth transistor
A、B:取樣開關 A, B: Sampling switch
1010:第五壓電材料 1010: The fifth piezoelectric material
TRX_N:第一通訊輸出 TRX_N: first communication output
1010:第六壓電材料 1010: The sixth piezoelectric material
TRX_N+1:第二通訊輸出 TRX_N+1: Second communication output
為讓本發明的上述與其他目的、特徵、優點與實施例能更淺顯易懂,所附圖式之說明如下: In order to make the above and other objects, features, advantages and embodiments of the present invention easier to understand, the accompanying drawings are described as follows:
圖1係繪示先前技術之具有指紋辨識功能的畫素電路示意圖。 FIG. 1 is a schematic diagram of a pixel circuit with a fingerprint recognition function in the prior art.
圖2係繪示先前技術之具有指紋辨識功能的畫素電路示意圖。 FIG. 2 is a schematic diagram of a pixel circuit with a fingerprint recognition function in the prior art.
圖3係繪示先前技術之具有指紋辨識功能的畫素陣列示意圖。 FIG. 3 is a schematic diagram of a pixel array with fingerprint recognition function in the prior art.
圖4係繪示先前技術之具有指紋辨識功能的畫素示意圖。 FIG. 4 is a schematic diagram of a pixel with a fingerprint recognition function in the prior art.
圖5係繪示本發明一實施例之具有生物辨識功能的畫素陣列示意圖。 FIG. 5 is a schematic diagram of a pixel array with biometric recognition function according to an embodiment of the present invention.
圖6係繪示本發明一實施例之具有生物辨識功能的畫素電路示意圖。 FIG. 6 is a schematic diagram of a pixel circuit with biometric recognition function according to an embodiment of the present invention.
圖7係繪示本發明一實施例之具有生物辨識功能的畫素陣列示意圖。 FIG. 7 is a schematic diagram of a pixel array with biometric recognition function according to an embodiment of the present invention.
圖8係繪示本發明一實施例之取樣開關的配置示意圖。 FIG. 8 is a schematic diagram illustrating the configuration of a sampling switch according to an embodiment of the present invention.
根據慣常的作業方式,圖中各種特徵與元件並未依實際比例繪製,其繪製方式是為了以最佳的方式呈現與本發明相關的具體特徵與元件。此外,在不同圖式間,以相同或相似的元件符號指稱相似的元件及部件。 In accordance with common practice, the various features and components in the figures are not drawn to actual scale, but are drawn in a manner intended to best present the specific features and components relevant to the present invention. In addition, the same or similar element symbols are used to refer to similar elements and components between different drawings.
為便貴審查委員能對本發明之目的、形狀、構造裝置特徵及其功效,做更進一步之認識與瞭解,茲舉實施例配合圖式,詳細說明如下。 In order to facilitate the review committee to have a further understanding of the purpose, shape, structural device characteristics and functions of the present invention, the detailed description is as follows with reference to the embodiments and drawings.
以下揭露提供不同的實施例或示例,以建置所提供之標的物的不同特徵。以下敘述之成分以及排列方式的特定示例是為了簡化本公開,目的不在於構成限制;元件的尺寸和形狀亦不被揭露之範圍或數值所限制,但可以取決於元件之製程條件或所需的特性。例如,利用剖面圖描述本發明的技術特徵,這些剖面圖是理想化的實施例示意圖。因而,由於製造工藝和/公差而導致圖示之形狀不同是可以預見的,不應為此而限定。 The following disclosure provides different embodiments or examples to achieve different features of the provided subject matter. The specific examples of components and arrangements described below are for simplifying the present disclosure and are not intended to be limiting; the size and shape of the components are not limited by the disclosed range or numerical value, but may depend on the process conditions of the components or the required requirements. characteristic. For example, cross-sectional views are used to describe the technical features of the present invention, and these cross-sectional views are schematic diagrams of idealized embodiments. Therefore, variations in the shapes shown in the illustrations due to manufacturing processes and/or tolerances are to be expected and should not be limited thereby.
再者,空間相對性用語,例如「下方」、「在...之下」、「低於」、「在...之上」以及「高於」等,是為了易於描述圖式中所繪示的元素或特徵之間 的關係;此外,空間相對用語除了圖示中所描繪的方向,還包含元件在使用或操作時的不同方向。 Furthermore, spatially relative terms such as "below", "below", "below", "above" and "above" are used to easily describe what is in the diagram. between depicted elements or features In addition, spatially relative terms include the different orientations of components in use or operation in addition to the directions depicted in the illustrations.
首先,請參考圖5~圖6,圖5係繪示本發明一實施例之具有生物辨識功能的畫素陣列示意圖。圖6係繪示本發明一實施例之具有生物辨識功能的畫素電路示意圖。圖7係繪示本發明一實施例之具有生物辨識功能的畫素陣列示意圖。 First, please refer to FIGS. 5 to 6 . FIG. 5 is a schematic diagram of a pixel array with biometric recognition function according to an embodiment of the present invention. FIG. 6 is a schematic diagram of a pixel circuit with biometric recognition function according to an embodiment of the present invention. FIG. 7 is a schematic diagram of a pixel array with biometric recognition function according to an embodiment of the present invention.
如圖5所示,在本發明一實施例中,具有生物辨識功能的畫素電路1000,配置於一陣列基板(圖未顯示)上,該陣列基板具有複數列畫素與複數行畫素組成的一畫素陣列。在圖5與圖6中,僅以列N(或稱第N列)與列N+1(或稱第N+1列)來說明本發明中具有生物辨識功能的畫素電路1000與畫素陣列1000’,但並非用於限制本發明,其中N的數值為自然數,可根據設計需求而制定。
As shown in Figure 5, in one embodiment of the present invention, a
在此要先說明的是,相較於圖1與圖3之現有技術而言,本發明實施例中所揭露具有生物辨識功能的畫素電路,由於每組兩兩相鄰的列畫素共用一條掃描線、一個儲存電容以及一條重置線的緣故,因此每組兩兩相鄰的列畫素中其一列畫素的感應區原本該配置掃描線、儲存電容以及重置線的區域成為透光區,也就是說,增加了所述列畫素中透光區的透光面積。接下來,以圖5、圖6與圖7詳細說明如下: It should be noted here that, compared with the prior art of FIGS. 1 and 3 , the pixel circuit with biometric recognition function disclosed in the embodiment of the present invention has two adjacent columns of pixels in each group. Because of a scan line, a storage capacitor and a reset line, the sensing area of one column of pixels in each group of two adjacent columns of pixels that was originally supposed to be configured with the scan line, storage capacitor and reset line becomes transparent. The light area, that is, increases the light-transmitting area of the light-transmitting area in the column of pixels. Next, the detailed description is as follows using Figure 5, Figure 6 and Figure 7:
如圖6所示,本發明一實施例中具有生物辨識功能的畫素電路1000的特徵在於:每兩相鄰的列畫素N、N+1共用一條掃描線S22;每兩相鄰的列畫素共用一個儲存電容C22;以及每兩相鄰的列畫素共用一條重置線RST22,關於此點,在圖5所示對應的畫素陣列1000’中可以清楚看得出來。同時參考圖1與圖3的話,就可知道原本配置於列畫素N+1的掃描線S_N+1、重置線RST_N+1、儲存電容C2_N+1甚至是電晶體T2_N+1以及電晶體T3_N+1,在圖5~圖7的本發明
實施例中都省略了,並與相鄰列畫素N共用掃描線S22、重置線RST22、儲存電容C22、電晶體T22以及電晶體T33。進一步比較圖3與圖7的話,同樣以列畫素N+1來看,本發明之實施例的畫素陣列1000’因為列畫素N+1的區域III、IV成為透光區,而大幅增加透光區的透光面積。如圖5、7所示,而原本應該配置於區域III、IV的掃描線S_N+1、重置線RST_N+1、儲存電容C2_N+1甚至是電晶體T2_N+1以及電晶體T3_N+1,全數由列畫素N+1中對應區域I、區域II的掃描線S22、重置線RST22、儲存電容C22、電晶體T22以及電晶體T33取代,也就是相鄰列畫素N、列畫素N+1共用掃描線S22、重置線RST22、儲存電容C22、電晶體T22以及電晶體T33。舉例來說,在本發明之實施例中,當N為1時,相鄰列畫素1、列畫素2的每一畫素會共用一組掃描線S22、重置線RST22、儲存電容C22、電晶體T22以及電晶體T33;相鄰列畫素3、列畫素4的每一畫素會共用一組掃描線S22、重置線RST22、儲存電容C22、電晶體T22以及電晶體T33;以此類推。
As shown in FIG. 6 , the
接著,請再參考圖5與圖6,該兩相鄰列N、N+1更包含:兩個二極體D,分別具有一第一端以及一第二端;兩個第一電晶體T1,分別具有一控制端、一第一端以及一第二端,其中該些第一電晶體T1的各該控制端皆電耦接於該共用的重置線RST22,而該些第一電晶體T1的各該第一端分別電耦接於一D-Bias以及各該二極體D的各該第一端,且該些第一電晶體T1的各該第二端分別電耦接於各該二極體D的各該第二端。 Next, please refer to Figure 5 and Figure 6 again. The two adjacent columns N and N+1 further include: two diodes D having a first end and a second end respectively; two first transistors T1 , respectively having a control terminal, a first terminal and a second terminal, wherein each control terminal of the first transistors T1 is electrically coupled to the common reset line RST22, and the first transistors T1 Each first terminal of T1 is electrically coupled to a D-Bias and each first terminal of each diode D, and each second terminal of the first transistors T1 is electrically coupled to each Each second terminal of the diode D.
如圖5與圖6所示,該兩相鄰列N、N+1更包含:一第二電晶體T2,具有一控制端、一第一端以及一第二端,其中該第二電晶體的該第一端接地;一第三電晶體T3,具有一控制端、一第一端以及一第二端,其中該第三電晶體T3的該控制端電耦接於該掃描線S22以及該共用的儲存電容C22的一第一端,而該 第三電晶體T3的該第一端電耦接於該第二電晶體T2的該第二端,且該第三電晶體T3的該第二端電耦接於一電壓讀出線Vout(Rx)。 As shown in FIG. 5 and FIG. 6 , the two adjacent columns N and N+1 further include: a second transistor T2 having a control terminal, a first terminal and a second terminal, wherein the second transistor T2 The first terminal of the third transistor T3 is grounded; a third transistor T3 has a control terminal, a first terminal and a second terminal, wherein the control terminal of the third transistor T3 is electrically coupled to the scan line S22 and the a first terminal of shared storage capacitor C22, and the The first terminal of the third transistor T3 is electrically coupled to the second terminal of the second transistor T2, and the second terminal of the third transistor T3 is electrically coupled to a voltage readout line Vout(Rx ).
如圖5與圖6所示,該兩相鄰列N、N+1更包含:一第一儲存電容C1_N,具有一第一端以及一第二端;一第二儲存電容C1_N+1,具有一第一端以及一第二端;兩個第四電晶體T4A、T4B,分別具有一控制端、一第一端以及一第二端,其中各自的控制端分別電耦接於不同的取樣開關A、B;其一該第四電晶體T4A的該第一端電耦接於該第二電晶體T2的該控制端,且該第四電晶體T4A的該第二端電耦接於該第一儲存電容C1_N的該第一端、其一該第一電晶體T1的該第二端以及其一該二極體D的該第二端;另一該第四電晶體T4B的該第一端電耦接於該共用的儲存電容C22的一第二端,且該第四電晶體T4B的該第二端電耦接於該第二儲存電容C1_N+1的該第一端、另一該第一電晶體T1的該第二端以及另一該二極體D的該第二端。 As shown in Figure 5 and Figure 6, the two adjacent columns N and N+1 further include: a first storage capacitor C1_N having a first terminal and a second terminal; a second storage capacitor C1_N+1 having A first terminal and a second terminal; two fourth transistors T4A and T4B respectively have a control terminal, a first terminal and a second terminal, wherein the respective control terminals are electrically coupled to different sampling switches. A, B; the first terminal of the fourth transistor T4A is electrically coupled to the control terminal of the second transistor T2, and the second terminal of the fourth transistor T4A is electrically coupled to the control terminal of the second transistor T2. The first terminal of a storage capacitor C1_N, the second terminal of the first transistor T1 and the second terminal of the diode D; the first terminal of the other fourth transistor T4B is electrically coupled to a second terminal of the common storage capacitor C22, and the second terminal of the fourth transistor T4B is electrically coupled to the first terminal of the second storage capacitor C1_N+1 and the other third terminal. The second terminal of a transistor T1 and the second terminal of the other diode D.
如圖5與圖6所示,該兩相鄰列N、N+1更包含:一第五壓電材料1010,具有一第一端以及一第二端,其中該第五壓電材料1010的該第一端電耦接於該第一儲存電容C1_N的該第二端,而該第五壓電材料1010的該第二端電耦接於一第一通訊輸出TRX_N;以及一第六壓電材料1010,具有一第一端以及一第二端,其中該第六壓電材料1010的該第一端電耦接於該第二儲存電容C1_N+1的該第二端,而該第五壓電材料1010的該第二端電耦接於一第二通訊輸出TRX_N+1。
As shown in FIG. 5 and FIG. 6 , the two adjacent columns N and N+1 further include: a fifth
本發明之一實施例中,該共用的掃描線S22、該共用的儲存電容C22共用的重置線RST22乃是位於該兩相鄰的列畫素N、N+1中的一列內。 In one embodiment of the present invention, the common scan line S22 and the common reset line RST22 of the common storage capacitor C22 are located in one of the two adjacent columns of pixels N and N+1.
本發明之一實施例中,相較於其一該列畫素N而言,另一該列畫素N+1內相對應畫素的透光區具有較大的透光面積。 In one embodiment of the present invention, compared with one of the rows of pixels N, the light-transmitting area of the corresponding pixel in the other row of pixels N+1 has a larger light-transmitting area.
本發明之一實施例中,該共用的重置線RST22乃是位於該兩相鄰的列畫素N、N+1之間。 In an embodiment of the present invention, the common reset line RST22 is located between the two adjacent columns of pixels N and N+1.
本發明之一實施例中,該共用的重置線RST22乃是位於該兩相鄰的列畫素N、N+1的感應區外。 In one embodiment of the present invention, the common reset line RST22 is located outside the sensing areas of the two adjacent columns of pixels N and N+1.
本發明之一實施例中,該兩相鄰列的該第一通訊輸出TRX與該第二通訊輸出TRX透過該共用的儲存電容C22,由該共用的掃描線S22取出資料,而該共用的重置線RST22重置該儲存電容。 In one embodiment of the present invention, the first communication output TRX and the second communication output TRX of the two adjacent columns retrieve data from the common scan line S22 through the shared storage capacitor C22, and the shared re-circulation Setting RST22 resets the storage capacitor.
本發明之一實施例中,該兩相鄰列的該第一通訊輸出TRX與該第二通訊輸出TRX於不同時間,分別透過該共用的儲存電容C22儲存一取樣電位,由該共用的掃描線S22取出資料,而該共用的重置線RST22重置該儲存電容。 In one embodiment of the present invention, the first communication output TRX and the second communication output TRX of the two adjacent columns store a sampling potential through the shared storage capacitor C22 at different times, and the shared scanning line S22 retrieves data, and the shared reset line RST22 resets the storage capacitor.
本發明之一實施例中,該兩相鄰列的該取樣開關A與該取樣開關B進行該兩相鄰列的指紋辨識的驅動。 In one embodiment of the present invention, the sampling switch A and the sampling switch B of the two adjacent columns are driven for fingerprint recognition of the two adjacent columns.
另外,如圖8所示,本發明之一實施例中,該兩相鄰列的該取樣開關A與該取樣開關B在一感應區外的一走線區域具有切換開啟的功能。 In addition, as shown in FIG. 8 , in one embodiment of the present invention, the sampling switch A and the sampling switch B in the two adjacent columns have the function of switching on in a wiring area outside a sensing area.
以上實施方式僅用以說明本發明的技術方案而非限制,儘管參照較佳實施方式對本發明進行了詳細說明,本領域的普通技術人員應當理解,可以對本發明的技術方案進行修改或等同替換,而不脫離本發明技術方案的精神和範圍。 The above embodiments are only used to illustrate the technical solutions of the present invention and are not limiting. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present invention can be modified or equivalently replaced. without departing from the spirit and scope of the technical solution of the present invention.
1000:畫素電路 1000: Pixel circuit
S22:掃描線 S22:Scan line
RST22:重置線 RST22: reset line
C22:儲存電容 C22: storage capacitor
T22:電晶體 T22: transistor
T33:電晶體 T33: transistor
D:二極體 D: Diode
T1:第一電晶體 T1: the first transistor
Vout(Rx):電壓讀出線 Vout(Rx): voltage readout line
C1_N:第一儲存電容 C1_N: first storage capacitor
C1_N+1:第二儲存電容 C1_N+1: second storage capacitor
T4A、T4B:第四電晶體 T4A, T4B: the fourth transistor
A、B:取樣開關 A, B: Sampling switch
1010:第五壓電材料 1010: The fifth piezoelectric material
TRX_N:第一通訊輸出 TRX_N: first communication output
TRX_N+1:第二通訊輸出 TRX_N+1: Second communication output
1010:第五壓電材料 1010: The fifth piezoelectric material
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