TWI814987B - 用於使用誘發拓樸量測半導體裝置晶圓之錯位之系統及方法 - Google Patents

用於使用誘發拓樸量測半導體裝置晶圓之錯位之系統及方法 Download PDF

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Publication number
TWI814987B
TWI814987B TW109104813A TW109104813A TWI814987B TW I814987 B TWI814987 B TW I814987B TW 109104813 A TW109104813 A TW 109104813A TW 109104813 A TW109104813 A TW 109104813A TW I814987 B TWI814987 B TW I814987B
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TW
Taiwan
Prior art keywords
layer
periodic structure
misalignment
image
orientation
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TW109104813A
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English (en)
Chinese (zh)
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TW202043757A (zh
Inventor
達里亞 尼葛瑞
阿農 馬那森
吉拉 拉列多
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美商科磊股份有限公司
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Publication of TW202043757A publication Critical patent/TW202043757A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW109104813A 2019-02-14 2020-02-14 用於使用誘發拓樸量測半導體裝置晶圓之錯位之系統及方法 TWI814987B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201962805737P 2019-02-14 2019-02-14
US62/805,737 2019-02-14
US201962864323P 2019-06-20 2019-06-20
US62/864,323 2019-06-20
US201962870264P 2019-07-03 2019-07-03
US62/870,264 2019-07-03

Publications (2)

Publication Number Publication Date
TW202043757A TW202043757A (zh) 2020-12-01
TWI814987B true TWI814987B (zh) 2023-09-11

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TW109104813A TWI814987B (zh) 2019-02-14 2020-02-14 用於使用誘發拓樸量測半導體裝置晶圓之錯位之系統及方法
TW109104824A TWI821524B (zh) 2019-02-14 2020-02-14 半導體裝置晶圓之製造中量測錯位的系統及方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW109104824A TWI821524B (zh) 2019-02-14 2020-02-14 半導體裝置晶圓之製造中量測錯位的系統及方法

Country Status (5)

Country Link
US (3) US11281112B2 (cg-RX-API-DMAC7.html)
EP (2) EP3970184A4 (cg-RX-API-DMAC7.html)
JP (2) JP7254217B2 (cg-RX-API-DMAC7.html)
TW (2) TWI814987B (cg-RX-API-DMAC7.html)
WO (2) WO2020168142A1 (cg-RX-API-DMAC7.html)

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US12131959B2 (en) * 2021-04-22 2024-10-29 Kla Corporation Systems and methods for improved metrology for semiconductor device wafers
US12165930B2 (en) * 2021-06-03 2024-12-10 Kla Corporation Adaptive modeling misregistration measurement system and method
CN113538586B (zh) * 2021-09-14 2021-11-23 武汉精创电子技术有限公司 晶粒行列定位方法、装置和系统以及计算机可读存储介质
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Also Published As

Publication number Publication date
US20210191279A1 (en) 2021-06-24
EP3931865A1 (en) 2022-01-05
US20220171296A1 (en) 2022-06-02
TW202043757A (zh) 2020-12-01
JP2022529077A (ja) 2022-06-16
EP3970184A4 (en) 2023-02-15
US11573497B2 (en) 2023-02-07
WO2020168140A9 (en) 2020-10-15
EP3970184A1 (en) 2022-03-23
TW202043758A (zh) 2020-12-01
EP3931865A4 (en) 2023-02-15
JP7595599B2 (ja) 2024-12-06
WO2020168140A1 (en) 2020-08-20
WO2020168142A1 (en) 2020-08-20
US11281112B2 (en) 2022-03-22
TWI821524B (zh) 2023-11-11
US11880141B2 (en) 2024-01-23
JP7254217B2 (ja) 2023-04-07
US20210200104A1 (en) 2021-07-01
WO2020168142A9 (en) 2020-10-29
JP2022530842A (ja) 2022-07-01

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