JP7254217B2 - 誘導されたトポグラフィを利用した半導体デバイスウェハの位置ずれを測定するためのシステムと方法 - Google Patents

誘導されたトポグラフィを利用した半導体デバイスウェハの位置ずれを測定するためのシステムと方法 Download PDF

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JP7254217B2
JP7254217B2 JP2021573602A JP2021573602A JP7254217B2 JP 7254217 B2 JP7254217 B2 JP 7254217B2 JP 2021573602 A JP2021573602 A JP 2021573602A JP 2021573602 A JP2021573602 A JP 2021573602A JP 7254217 B2 JP7254217 B2 JP 7254217B2
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layer
periodic structure
misalignment
image
imaging
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JP2022529077A5 (cg-RX-API-DMAC7.html
JP2022529077A (ja
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ダリア ネグリ
アムノン マナッセン
ジラド ラレド
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2021573602A 2019-02-14 2020-02-14 誘導されたトポグラフィを利用した半導体デバイスウェハの位置ずれを測定するためのシステムと方法 Active JP7254217B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201962805737P 2019-02-14 2019-02-14
US62/805,737 2019-02-14
US201962864323P 2019-06-20 2019-06-20
US62/864,323 2019-06-20
US201962870264P 2019-07-03 2019-07-03
US62/870,264 2019-07-03
PCT/US2020/018202 WO2020168142A1 (en) 2019-02-14 2020-02-14 System and method for measuring misregistration of semiconductor device wafers utilizing induced topography

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JP2022529077A JP2022529077A (ja) 2022-06-16
JP2022529077A5 JP2022529077A5 (cg-RX-API-DMAC7.html) 2023-02-20
JP7254217B2 true JP7254217B2 (ja) 2023-04-07

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JP2021574301A Active JP7595599B2 (ja) 2019-02-14 2020-02-14 トポグラフィ半導体デバイスウェハの製造における位置ずれの測定方法

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US (3) US11281112B2 (cg-RX-API-DMAC7.html)
EP (2) EP3970184A4 (cg-RX-API-DMAC7.html)
JP (2) JP7254217B2 (cg-RX-API-DMAC7.html)
TW (2) TWI814987B (cg-RX-API-DMAC7.html)
WO (2) WO2020168142A1 (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7254217B2 (ja) * 2019-02-14 2023-04-07 ケーエルエー コーポレイション 誘導されたトポグラフィを利用した半導体デバイスウェハの位置ずれを測定するためのシステムと方法
US12131959B2 (en) * 2021-04-22 2024-10-29 Kla Corporation Systems and methods for improved metrology for semiconductor device wafers
US12165930B2 (en) * 2021-06-03 2024-12-10 Kla Corporation Adaptive modeling misregistration measurement system and method
CN113538586B (zh) * 2021-09-14 2021-11-23 武汉精创电子技术有限公司 晶粒行列定位方法、装置和系统以及计算机可读存储介质
EP4338009A4 (en) * 2021-10-21 2025-06-04 KLA Corporation INDUCED SHIFTS FOR IMPROVED OVERHEATING ERROR METROLOGY
US20240068804A1 (en) * 2022-08-23 2024-02-29 Kla Corporation Multi-pitch grid overlay target for scanning overlay metrology
US20250054872A1 (en) * 2023-08-11 2025-02-13 Kla Corporation Overlay metrology target for die-to-wafer overlay metrology
KR20250090013A (ko) 2023-12-12 2025-06-19 삼성전자주식회사 오버레이 기준 파장의 결정 방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050560A (ja) 2000-08-02 2002-02-15 Nikon Corp ステージ装置、計測装置及び計測方法、露光装置及び露光方法
US6992764B1 (en) 2002-09-30 2006-01-31 Nanometrics Incorporated Measuring an alignment target with a single polarization state
US20070222088A1 (en) 2003-04-08 2007-09-27 Aoti Operating Company, Inc, Overlay Metrology Mark
US20080023855A1 (en) 2000-08-30 2008-01-31 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
WO2009126910A2 (en) 2008-04-11 2009-10-15 Applied Materials, Inc. Laser scribe inspection methods and systems
US20130286395A1 (en) 2012-04-27 2013-10-31 Taiwan Semiconductor Manufacturing Co., Ltd. Tool Induced Shift Reduction Determination for Overlay Metrology
KR101714616B1 (ko) 2016-05-30 2017-04-26 (주)오로스 테크놀로지 세 개 층의 오버레이를 측정하는 방법

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU3778799A (en) * 1998-04-30 1999-11-16 Paul Derek Coon Alignment simulation
JP4132298B2 (ja) * 1998-10-27 2008-08-13 株式会社ルネサステクノロジ 重ね合わせ検査マークを備える半導体装置
US6704089B2 (en) * 2000-04-28 2004-03-09 Asml Netherlands B.V. Lithographic projection apparatus, a method for determining a position of a substrate alignment mark, a device manufacturing method and device manufactured thereby
TW588414B (en) * 2000-06-08 2004-05-21 Toshiba Corp Alignment method, overlap inspecting method and mask
US7009704B1 (en) 2000-10-26 2006-03-07 Kla-Tencor Technologies Corporation Overlay error detection
US6819789B1 (en) * 2000-11-08 2004-11-16 Orbotech Ltd. Scaling and registration calibration especially in printed circuit board fabrication
DE10142316A1 (de) * 2001-08-30 2003-04-17 Advanced Micro Devices Inc Halbleiterstruktur und Verfahren zur Bestimmung kritischer Dimensionen und Überlagerungsfehler
TW505977B (en) * 2001-09-04 2002-10-11 Nanya Technology Corp Method for monitoring the exposed pattern precision on four semiconductor layers
US6949462B1 (en) * 2002-04-04 2005-09-27 Nanometrics Incorporated Measuring an alignment target with multiple polarization states
US7170604B2 (en) * 2002-07-03 2007-01-30 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
TW200509355A (en) * 2003-04-08 2005-03-01 Aoti Operating Co Inc Overlay metrology mark
US7218399B2 (en) * 2004-01-21 2007-05-15 Nikon Corporation Method and apparatus for measuring optical overlay deviation
WO2005086582A2 (en) 2004-03-11 2005-09-22 Nano-Or Technologies (Israel) Ltd. Methods and apparatus for wavefront manipulations and improved 3-d measurements
US7379184B2 (en) * 2004-10-18 2008-05-27 Nanometrics Incorporated Overlay measurement target
US7463337B2 (en) * 2005-12-30 2008-12-09 Asml Netherlands B.V. Substrate table with windows, method of measuring a position of a substrate and a lithographic apparatus
US8013979B2 (en) * 2007-08-17 2011-09-06 Asml Holding N.V. Illumination system with low telecentricity error and dynamic telecentricity correction
US8399263B2 (en) 2008-10-21 2013-03-19 Nikon Corporation Method for measuring expansion/contraction, method for processing substrate, method for producing device, apparatus for measuring expansion/contraction, and apparatus for processing substrate
EP3396416A1 (en) 2008-11-25 2018-10-31 Tetravue, Inc. Systems and methods of high resolution three-dimensional imaging
US8520189B2 (en) * 2010-05-03 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for maintaining depth of focus
US9709903B2 (en) * 2011-11-01 2017-07-18 Kla-Tencor Corporation Overlay target geometry for measuring multiple pitches
US9535338B2 (en) * 2012-05-29 2017-01-03 Asml Netherlands B.V. Metrology method and apparatus, substrate, lithographic system and device manufacturing method
WO2013180187A1 (ja) * 2012-05-30 2013-12-05 株式会社ニコン 波面計測方法及び装置、並びに露光方法及び装置
JP6510521B2 (ja) * 2013-11-26 2019-05-08 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィメトロロジのための方法、装置及び基板
US9490182B2 (en) * 2013-12-23 2016-11-08 Kla-Tencor Corporation Measurement of multiple patterning parameters
JP2016180783A (ja) * 2015-03-23 2016-10-13 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法、パターンの重ね合わせ検査方法
KR102048794B1 (ko) * 2015-04-21 2020-01-08 에이에스엠엘 네델란즈 비.브이. 계측 방법 및 장치, 컴퓨터 프로그램 및 리소그래피 시스템
US9891175B2 (en) * 2015-05-08 2018-02-13 Kla-Tencor Corporation System and method for oblique incidence scanning with 2D array of spots
CN112859540B (zh) 2015-05-19 2024-10-18 科磊股份有限公司 成像计量目标及方法
US9581434B2 (en) * 2015-06-30 2017-02-28 National Taiwan University Of Science And Technology Apparatus and method for measuring pattern of a grating device
EP3171396A1 (en) * 2015-11-18 2017-05-24 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Method of determining an overlay error, manufacturing method and system for manufacturing of a multilayer semiconductor device, and semiconductor device manufactured thereby
WO2017093256A1 (en) * 2015-12-03 2017-06-08 Asml Netherlands B.V. Position measuring method of an alignment target
NL2017844A (en) * 2015-12-22 2017-06-28 Asml Netherlands Bv Focus control arrangement and method
CN106933046B (zh) * 2015-12-30 2019-05-03 上海微电子装备（集团）股份有限公司 用于套刻误差检测的装置及测校方法
US10451412B2 (en) * 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
US10371626B2 (en) 2016-08-17 2019-08-06 Kla-Tencor Corporation System and method for generating multi-channel tunable illumination from a broadband source
EP3293574A1 (en) * 2016-09-09 2018-03-14 ASML Netherlands B.V. Metrology method, apparatus and computer program
WO2018128984A1 (en) 2017-01-03 2018-07-12 Kla-Tencor Corporation Diffraction based overlay scatterometry
US10788765B2 (en) * 2017-01-25 2020-09-29 Asml Netherlands B.V. Method and apparatus for measuring a structure on a substrate
US10444161B2 (en) 2017-04-05 2019-10-15 Kla-Tencor Corporation Systems and methods for metrology with layer-specific illumination spectra
CN111615667A (zh) * 2018-01-17 2020-09-01 Asml荷兰有限公司 测量目标的方法和量测设备
KR102760929B1 (ko) * 2019-01-21 2025-02-03 삼성전자주식회사 반도체 소자 제조 방법
JP7254217B2 (ja) * 2019-02-14 2023-04-07 ケーエルエー コーポレイション 誘導されたトポグラフィを利用した半導体デバイスウェハの位置ずれを測定するためのシステムと方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050560A (ja) 2000-08-02 2002-02-15 Nikon Corp ステージ装置、計測装置及び計測方法、露光装置及び露光方法
US20080023855A1 (en) 2000-08-30 2008-01-31 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US6992764B1 (en) 2002-09-30 2006-01-31 Nanometrics Incorporated Measuring an alignment target with a single polarization state
US20070222088A1 (en) 2003-04-08 2007-09-27 Aoti Operating Company, Inc, Overlay Metrology Mark
WO2009126910A2 (en) 2008-04-11 2009-10-15 Applied Materials, Inc. Laser scribe inspection methods and systems
US20130286395A1 (en) 2012-04-27 2013-10-31 Taiwan Semiconductor Manufacturing Co., Ltd. Tool Induced Shift Reduction Determination for Overlay Metrology
KR101714616B1 (ko) 2016-05-30 2017-04-26 (주)오로스 테크놀로지 세 개 층의 오버레이를 측정하는 방법

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Publication number Publication date
US20210191279A1 (en) 2021-06-24
EP3931865A1 (en) 2022-01-05
US20220171296A1 (en) 2022-06-02
TW202043757A (zh) 2020-12-01
JP2022529077A (ja) 2022-06-16
EP3970184A4 (en) 2023-02-15
US11573497B2 (en) 2023-02-07
WO2020168140A9 (en) 2020-10-15
EP3970184A1 (en) 2022-03-23
TW202043758A (zh) 2020-12-01
EP3931865A4 (en) 2023-02-15
JP7595599B2 (ja) 2024-12-06
WO2020168140A1 (en) 2020-08-20
WO2020168142A1 (en) 2020-08-20
US11281112B2 (en) 2022-03-22
TWI821524B (zh) 2023-11-11
US11880141B2 (en) 2024-01-23
US20210200104A1 (en) 2021-07-01
WO2020168142A9 (en) 2020-10-29
JP2022530842A (ja) 2022-07-01
TWI814987B (zh) 2023-09-11

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