TWI813747B - 銅／陶瓷接合體、絕緣電路基板、及銅／陶瓷接合體之製造方法、及絕緣電路基板之製造方法 - Google Patents

銅／陶瓷接合體、絕緣電路基板、及銅／陶瓷接合體之製造方法、及絕緣電路基板之製造方法 Download PDF

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TWI813747B
TWI813747B TW108130462A TW108130462A TWI813747B TW I813747 B TWI813747 B TW I813747B TW 108130462 A TW108130462 A TW 108130462A TW 108130462 A TW108130462 A TW 108130462A TW I813747 B TWI813747 B TW I813747B
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copper
magnesium
ceramic
aforementioned
ceramic substrate
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TW108130462A
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TW202016050A (zh
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寺伸幸
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日商三菱綜合材料股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B23K20/026—Thermo-compression bonding with diffusion of soldering material
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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    • B22F10/18—Formation of a green body by mixing binder with metal in filament form, e.g. fused filament fabrication [FFF]
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
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    • B22F3/1017—Multiple heating or additional steps
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    • B22F3/1103—Making porous workpieces or articles with particular physical characteristics
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    • B22F3/11—Making porous workpieces or articles
    • B22F3/1121—Making porous workpieces or articles by using decomposable, meltable or sublimatable fillers
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    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
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    • B29C64/106—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
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    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
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    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • D—TEXTILES; PAPER
    • D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01D—MECHANICAL METHODS OR APPARATUS IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS
    • D01D5/00—Formation of filaments, threads, or the like
    • D01D5/28—Formation of filaments, threads, or the like while mixing different spinning solutions or melts during the spinning operation; Spinnerette packs therefor
    • D01D5/30—Conjugate filaments; Spinnerette packs therefor
    • D—TEXTILES; PAPER
    • D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
    • D01F1/00—General methods for the manufacture of artificial filaments or the like
    • D01F1/02—Addition of substances to the spinning solution or to the melt
    • D01F1/10—Other agents for modifying properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
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    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
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    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
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    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52—Ceramics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
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    • B29C64/393—Data acquisition or data processing for additive manufacturing for controlling or regulating additive manufacturing processes
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Abstract

一種銅/陶瓷接合體，係由銅或銅合金構成的銅構件(22)、與由氮化矽構成的陶瓷構件(11)被接合而成之銅/陶瓷接合體，其特徵為：銅構件(22)與陶瓷構件(11)之間，係在陶瓷構件(11)側形成鎂氧化物層(31)，在該鎂氧化物層(31)與銅構件(22)之間形成鎂固溶在銅母相中之鎂固溶層(32)；鎂固溶層(32)的鎂氧化物層(31)側，係存在鎂氮化物相(35)。

Description

銅／陶瓷接合體、絕緣電路基板、及銅／陶瓷接合體之製造方法、及絕緣電路基板之製造方法
本發明係有關由銅或銅合金構成的銅構件、與由氮化矽構成的陶瓷構件被接合而成的銅/陶瓷接合體、絕緣電路基板、及銅/陶瓷接合體之製造方法、絕緣電路基板之製造方法。 本發明針對2018年8月28日於日本提出申請之特願2018-159662號專利申請案，以及，2019年2月14日於台灣提出申請之108104896號專利申請案主張優先權，於此處援用其內容。
功率模組、LED模組及熱電模組，係在絕緣層一方之面形成由導電材料構成的電路層之絕緣電路基板上，被接合功率半導體元件、發光二極體(LED)元件及熱電元件的構造。 例如，為了控制風力發電、電動車、油電混合車等而使用的大電力控制用之功率半導體元件，動作時發熱量很多，所以搭載此之基板，例如，從前即已廣泛地使用具備由氮化矽構成的陶瓷基板，以及於此陶瓷基板一方之面接合導電性優異的金屬板而形成的電路層之絕緣電路基板。作為絕緣電路基板，於陶瓷基板之另一方之面上接合金屬板而形成金屬層者也被提供。
例如於專利文獻1，提出以構成電路層及金屬層的第一金屬板及第二金屬板為銅板，將該銅板利用DBC法直接接合於陶瓷基板的絕緣電路基板。此DBC法，係藉由利用銅與銅氧化物的共晶反應，在銅板與陶瓷基板的界面產生液相，接合銅板與陶瓷基板。
此外，於專利文獻2，提出在陶瓷基板之一方之面與另一方之面，藉由接合銅板形成電路層及金屬層之絕緣電路基板。在此絕緣電路基板，在陶瓷基板之一方之面及另一方之面，使銀-銅-鈦系焊料中介而配置銅板，藉由進行加熱處理接合銅板(所謂的活性金屬焊接法)。在此活性金屬焊接法，由於使用含有活性金屬之鈦的焊料，所以熔融的焊料與陶瓷基板之濕潤性提高，陶瓷基板與銅板良好地接合。
再者，在專利文獻3，提出了作為於高溫的氮氣氛圍下在將銅板與陶瓷基板接合時所用的接合用焊料，含有由銅-鎂-鈦合金所構成的粉末之膏料。該專利文獻3，係在氮氣氛圍下藉由以560～800℃加熱而接合之構成，銅-鎂-鈦合金中的鎂係昇華而不殘留在接合界面，並且，氮化鈦(TiN)未被實質地形成。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開平04-162756號公報 [專利文獻2]日本特許第3211856號公報 [專利文獻3]日本特許第4375730號公報
[發明所欲解決之課題]
然而，如專利文獻1所揭示，在藉由DBC法接合陶瓷基板與銅板的場合，因為有必要將接合溫度設在1065℃以上(銅與銅氧化物之共晶點溫度以上)，所以在接合時有導致陶瓷基板劣化之虞。此外，於氮氣氛圍等接合之場合，問題在於在接合界面殘留氣體，容易發生部分放電。
如專利文獻2所揭示，利用活性金屬焊接法接合陶瓷基板與銅板的場合，因為焊料含有銀、接合界面存在銀，而容易發生遷移，無法使用於高耐壓用途。此外，因為接合溫度比較高溫、為900℃，可能造成陶瓷基板劣化。再者，在陶瓷基板的接合面附近，會生成鈦氮化物相或含鈦的金屬間化合物相，且在高溫動作時有可能在陶瓷基板發生破裂。
如專利文獻3所揭示，在使用由含有銅-鎂-鈦合金構成的粉末之膏料所構成之接合用焊料並於氮氣氛圍下接合之場合，問題在於在接合界面殘留氣體、容易發生部分放電。此外，有可能膏料所含的有機物殘留在接合界面、使接合不充分。再者，在陶瓷基板的接合面附近，會生成含鈦的金屬間化合物相，且在高溫動作時有可能在陶瓷基板發生破裂。
本發明，係有鑑於前述情形而完成之發明，目的在於提供將銅構件與陶瓷構件確實地接合，同時耐遷移性優異，並且在高溫動作時可以抑制陶瓷破裂發生之銅/陶瓷接合體、絕緣電路基板、及上述之銅/陶瓷接合體之製造方法、絕緣電路基板之製造方法。 [供解決課題之手段]
為了解決此類之課題並達成前述目的，本發明之銅/陶瓷接合體，係由銅或銅合金構成的銅構件、與由氮化矽構成的陶瓷構件被接合而成之銅/陶瓷接合體，其特徵：前述銅構件與前述陶瓷構件之間，係在前述陶瓷構件側形成鎂氧化物層，在該鎂氧化物層與前述銅構件之間形成鎂固溶在銅母相中之鎂固溶層；前述鎂固溶層的前述鎂氧化物層側，係存在鎂氮化物相。
該構成之銅/陶瓷接合體中，在前述銅構件與前述陶瓷構件之間，在前述陶瓷構件側形成鎂氧化物層，在該鎂氧化物層與前述銅構件之間形成鎂固溶層；前述鎂固溶層的前述鎂氧化物層側，係存在鎂氮化物相。該鎂氮化物相，係藉由配設在陶瓷構件與銅構件之間的鎂與陶瓷構件中的氮發生反應而形成的，意味陶瓷構件是充分反應。 從而，在銅構件與陶瓷構件之接合界面充分進行界面反應，可以得到銅構件與陶瓷構件確實地被接合之銅/陶瓷接合體。
由於在銅構件與陶瓷構件之接合界面並不存在鈦，鋯，鈮，鉿，所以不會生成鈦，鋯，鈮，鉿的氮化物相或含鈦，鋯，鈮，鉿的金屬間化合物相，在高溫動作時也可以抑制陶瓷構件破裂。 由於銅構件與陶瓷構件的接合界面不存在銀，所以耐遷移性也優異。
本發明之銅/陶瓷接合體，最好是從前述陶瓷構件的接合面起向前述銅構件側50μm為止的領域之金屬間化合物相的面積率為15%以下。 該場合，由於從前述陶瓷構件的接合面起向前述銅構件側50μm為止的領域之金屬間化合物相的面積率為15%以下，所以在陶瓷構件的接合面附近，硬且脆的金屬間化合物相存在不多，而可以確實抑制高溫動作時的陶瓷構件破裂。 在本發明，上述的金屬間化合物相係將氮化物相或氧化物相除外。
本發明之絕緣電路基板，係在由氮化矽構成的陶瓷基板的表面，接合由銅或銅合金構成的銅板而成的絕緣電路基板，其特徵為：前述銅板與前述陶瓷基板之間，係在前述陶瓷基板側形成鎂氧化物層，在該鎂氧化物層與前述銅板之間形成鎂固溶在銅母相中之鎂固溶層；前述鎂固溶層的前述鎂氧化物層側，係存在鎂氮化物相。
在該構成的絕緣電路基板，可以將銅板與陶瓷基板確實地接合，同時耐遷移性優異、於高耐壓條件下也可以信賴性高地使用。 可以抑制在高溫動作時陶瓷基板發生破裂，且在高溫條件下也可以信賴性高地使用。
於本發明之絕緣電路基板，最好是從前述陶瓷基板的接合面起向前述銅板側50μm為止的領域之金屬間化合物相的面積率為15%以下。 該場合，由於從前述陶瓷基板接合面起向前述銅板側50μm為止的領域之金屬間化合物相的面積率為15%以下，所以在陶瓷基板的接合面附近，硬且脆的金屬間化合物相存在不多，而可以確實抑制高溫動作時的陶瓷基板破裂。 在本發明，上述的金屬間化合物相係將氮化物相或氧化物相除外。
本發明之銅/陶瓷接合體之製造方法，係製造上述之銅/陶瓷接合體之銅/陶瓷接合體之製造方法，其特徵為具備：在前述銅構件與前述陶瓷構件之間、配置鎂之鎂配置製程，將前述銅構件與前述陶瓷構件、中介鎂而層積之層積製程，與在將中介鎂而層積的前述銅構件與前述陶瓷構件於層積方向加壓之狀態下，在真空氛圍下予以加熱處理並接合之接合製程；於前述鎂配置製程，將鎂量設在0.17mg/cm2 以上3.48mg/cm2 以下之範圍內。
根據此構成之銅/陶瓷接合體之製造方法，由於在前述銅構件與前述陶瓷構件之間配置鎂，且在將該等於層積方向加壓之狀態下、在真空氛圍下予以加熱處理，所以在接合界面沒有殘留氣體或有機物的殘渣等。 鎂配置製程中，由於將鎂量設在0.17mg/cm2 以上3.48mg/cm2 以下的範圍內，而能充分得到界面反應所需要的液相。因而，可得到銅構件與陶瓷構件確實地被接合的銅/陶瓷接合體。 由於在接合並不使用鈦，鋯，鈮，鉿，所以在陶瓷構件的接合面附近不存在鈦，鋯，鈮，鉿的氮化物相或含鈦，鋯，鈮，鉿的金屬間化合物相，而能得到可以抑制高溫動作時陶瓷構件破裂之銅/陶瓷接合體。 接合上並不使用銀，因而可以得到耐遷移性優異的銅/陶瓷接合體。
本發明之銅/陶瓷接合體之製造方法，最好是前述接合製程之加壓荷重設在0.049MPa以上3.4MPa以下之範圍內，且加熱溫度設在500℃以上850℃以下之範圍內。 該場合，由於前述接合製程之加壓荷重設在0.049MPa以上3.4MPa以下之範圍內，而可以使陶瓷構件與銅構件與鎂密貼，可以在加熱時促進該等的界面反應。 由於將前述接合製程之加熱溫度設在比銅與鎂的共晶溫度還高的500℃以上，而可以在接合界面充分地產生液相。另一方面，由於前述接合製程之加熱溫度設在850℃以下，所以能抑制液相過剩地生成。此外，陶瓷構件上的熱負荷變小，可抑制陶瓷構件的劣化。
本發明之絕緣電路基板之製造方法係製造上述的絕緣電路基板之絕緣電路基板之製造方法，其特徵為具備：在前述銅板與前述陶瓷基板之間、配置鎂之鎂配置製程，將前述銅板與前述陶瓷基板、中介鎂而層積之層積製程，與在將中介鎂而層積的前述銅板與前述陶瓷基板於層積方向加壓之狀態下，在真空氛圍下予以加熱處理並接合之接合製程；於前述鎂配置製程，將鎂量設在0.17mg/cm2 以上3.48mg/cm2 以下之範圍內。
根據此構成之絕緣電路基板之製造方法，由於在前述銅板與前述陶瓷基板之間配置鎂，且在將該等於層積方向加壓之狀態下、在真空氛圍下予以加熱處理，所以在接合界面沒有殘留氣體或有機物的殘渣等。 鎂配置製程中，由於將鎂量設在0.17mg/cm2 以上3.48mg/cm2 以下的範圍內，而能充分得到界面反應所需要的液相。因而，可得到銅板與陶瓷基板確實地接合的絕緣電路基板。此外，由於在接合並不使用鈦，鋯，鈮，鉿，所以在陶瓷基板的接合面附近不存在鈦，鋯，鈮，鉿的氮化物相或含鈦，鋯，鈮，鉿的金屬間化合物相，而能得到可以抑制高溫動作時陶瓷基板破裂之絕緣電路基板。 由於接合上並不使用銀，而可以得到耐遷移性優異的絕緣電路基板。
本發明之絕緣電路基板之製造方法，最好是前述接合製程之加壓荷重設在0.049MPa以上3.4MPa以下之範圍內，且加熱溫度設在500℃以上850℃以下之範圍內。 該場合，由於前述接合製程之加壓荷重設在0.049MPa以上3.4MPa以下之範圍內，而可以使陶瓷基板與銅板與鎂密貼，可以在加熱時促進該等的界面反應。 由於將前述接合製程之加熱溫度設在比銅與鎂的共晶溫度還高的500℃以上，而可以在接合界面充分地產生液相。另一方面，由於前述接合製程之加熱溫度設在850℃以下，所以能抑制液相過剩地生成。此外，陶瓷基板上的熱負荷變小，可抑制陶瓷基板的劣化。 [發明之效果]
根據本發明，可以提供將銅構件與陶瓷構件確實地接合，同時耐遷移性優異，並且在高溫動作時可以抑制陶瓷破裂發生之銅/陶瓷接合體、絕緣電路基板、及上述之銅/陶瓷接合體之製造方法、絕緣電路基板之製造方法。
以下，針對本發明之實施型態參照附圖並加以說明。
關於本實施型態之銅/陶瓷接合體，係藉由陶瓷構件之陶瓷基板11、與銅構件之銅板22(電路層12)及銅板23(金屬層13)被接合而構成的絕緣電路基板10。 圖1顯示本發明之實施型態之絕緣電路基板10及使用此絕緣電路基板10之功率模組1。
此功率模組1，係具備：絕緣電路基板10，在此絕緣電路基板10之一方側(圖1之上側)中介第1焊錫層2被接合的半導體元件3，與在絕緣電路基板10之另一方側(圖1之下側)中介第2焊錫層8被接合的散熱裝置51。
絕緣電路基板10，係具備：陶瓷基板11、被配設在此陶瓷基板11一方之面(圖1之上面)之電路層12、與被配設在陶瓷基板11另一方之面(圖1之下面)之金屬層13。 陶瓷基板11，係防止電路層12與金屬層13之間的導電連接之基板，在本實施型態，是由絕緣性高的氮化矽構成。陶瓷基板11的厚度，被設定在0.2mm以上1.5mm以下之範圍內，於本實施型態，陶瓷基板11的厚度以0.32mm為佳。
電路層12，如圖4所示，藉由在陶瓷基板11一方之面接合由銅或銅合金構成的銅板22而形成。在本實施型態，作為構成電路層12的銅板22，使用無氧銅之壓延板。在此電路層12，被形成電路圖案，其一方之面(圖1之上面)，為搭載半導體元件3之搭載面。電路層12的厚度被設定在0.1mm以上1.0mm以下之範圍內，於本實施型態，電路層12的厚度以0.6mm為佳。
金屬層13，如圖4所示，係藉由在陶瓷基板11另一方之面被接合銅或銅合金構成的銅板23而形成。在本實施型態，作為構成金屬層13的銅板23，使用無氧銅之壓延板。金屬層13的厚度被設定在0.1mm以上1.0mm以下之範圍內，在本實施型態，金屬層13的厚度以0.6mm為佳。
散熱裝置51，係用以冷卻前述的絕緣電路基板10之裝置，在本實施型態，作成由熱傳導性良好的材料構成之散熱板。在本實施型態，散熱裝置51，係由熱傳導性優異的銅或銅合金所構成。散熱裝置51與絕緣電路基板10的金屬層13，是中介第2焊錫層8而接合。
陶瓷基板11與電路層12(銅板22)，及陶瓷基板11與金屬層13(銅板23)，如圖4所示，係中介鎂膜25而接合。 在此陶瓷基板11與電路層12(銅板22)之接合界面及陶瓷基板11與金屬層13(銅板23)之接合界面，如圖2所示，為層積被形成在陶瓷基板11側的鎂氧化物層31、與鎂固溶在銅母相中的鎂固溶層32之構造。
鎂氧化物層31，例如由MgO構成。鎂氧化物層31的厚度係在2nm以上30nm以下之範圍內，最好是5nm以上15nm以下之範圍內。該鎂氧化物層31，推測是藉由被形成在陶瓷基板11表面的氧化物的氧(O)與鎂膜25的鎂(Mg)反應而形成。
該鎂固溶層32之鎂含有量，係在0.01原子%以上3原子%以下之範圍內。鎂固溶層32的厚度係在0.1μm以上150μm以下之範圍內，最好是0.1μm以上80μm以下之範圍內。
在鎂固溶層32的鎂氧化物層31側，形成鎂氮化物相35。該鎂氮化物相35，例如，由Mg3 N2 構成、具有針狀組織。鎂氮化物相35，係在鎂固溶層32的鎂氧化物層31側的領域部分地被形成。
在本實施型態，從陶瓷基板11的接合面起向銅板22(電路層12)及銅板23(金屬層13)側50μm為止的領域之金屬間化合物相的面積率最好是15%以下。 如上述，如果抑制接合界面之金屬間化合物相的面積率，也可以在鎂固溶層32的內部，分散包含銅與鎂的銅-鎂金屬間化合物相。作為銅-鎂金屬間化合物相，可例舉Cu2 Mg、CuMg2 等。
其次，針對上述之本實施型態之絕緣電路基板10之製造方法，參照圖3及圖4並加以說明。
(鎂配置製程S01) 如圖4所示，在成為電路層12的銅板22與陶瓷基板11之間、及成為金屬層13的銅板23與陶瓷基板11之間，分別配置鎂。於本實施型態，藉由在銅板22，23蒸鍍鎂，而形成鎂膜25。 於此鎂配置製程S01，將所配置的鎂量設在0.17mg/cm2 以上3.48mg/cm2 以下之範圍內。
(層積製程S02) 其次，將銅板22與陶瓷基板11中介鎂膜25而層積，同時將陶瓷基板11與銅板23中介鎂膜25而層積。
(接合製程S03) 其次，將層積的銅板22、陶瓷基板11、銅板23於層積方向加壓，同時裝入真空爐內加熱，將銅板22與陶瓷基板11與銅板23加以接合。 接合製程S03之加壓荷重最好是設在0.049MPa以上3.4MPa以下之範圍內。 接合製程S03之加熱溫度最好是設在500℃以上850℃以下之範圍內。 接合製程S03之真空度，最好是設在1×10-6 Pa以上5×10-2 Pa以下之範圍內。 加熱溫度下之保持時間最好是在5分鐘以上180分鐘以下之範圍內。 從加熱溫度(接合溫度)起降溫到480℃為止時的降溫速度並未特別限定，但設在20℃/min以下佳，在10℃/min以下更佳。此外，降溫速度的下限值並未特別限定，可以設在2℃/min以上，抑或3℃/min以上，抑或5℃/min以上。
如上述，利用鎂配置製程S01、層積製程S02、與接合製程S03，製造本實施型態之絕緣電路基板10。
(散熱裝置接合製程S04) 其次，在絕緣電路基板10之金屬層13另一方之面側接合散熱裝置51。將絕緣電路基板10與散熱裝置51、中介焊料予以層積並裝入加熱爐，中介第2焊錫層8而將絕緣電路基板10與散熱裝置51進行焊料接合。
(半導體元件接合製程S05) 其次，在絕緣電路基板10的電路層12一方之面，利用焊接接合半導體元件3。 利用以上的製程，製造出圖1所示的功率模組1。
根據以上之類的構成之本實施型態之絕緣電路基板10(銅/陶瓷接合體)，由無氧銅構成的銅板22(電路層12)及銅板23(金屬層13)與由氮化矽構成的陶瓷基板11中介鎂膜25而接合；在陶瓷基板11與電路層12(銅板22)之間、及陶瓷基板11與金屬層13(銅板22)之間，在陶瓷基板11側形成鎂氧化物層31，層積鎂固溶在銅母相中之鎂固溶層32；在鎂固溶層32的鎂氧化物層31側存在鎂氮化物相35。該鎂氮化物相35，係藉由鎂與陶瓷基板11中的氮發生反應而形成的，意味陶瓷基板11是充分反應。 因而，在銅板22(電路層12)及銅板23(金屬層13)與陶瓷基板11之接合界面充分進行界面反應，可以得到銅板22(電路層12)及銅板23(金屬層13)與陶瓷基板11確實地接合之絕緣電路基板10(銅/陶瓷接合體)。
由於在銅板22(電路層12)及銅板23(金屬層13)與陶瓷基板11之接合界面並不存在鈦，鋯，鈮，鉿，所以不會生成鈦，鋯，鈮，鉿的氮化物相或含鈦，鋯，鈮，鉿的金屬間化合物相，在高溫動作時也可以抑制陶瓷基板11破裂。在銅板22(電路層12)及銅板23(金屬層13)與陶瓷基板11的接合界面之鈦，鋯，鈮，鉿的合計含有量在0.3mass%以下為佳，在0.1mass%以下更佳。
由於陶瓷基板11與銅板22(電路層12)及銅板23(金屬層13)的接合界面不存在銀，所以耐遷移性優異。在銅板22(電路層12)及銅板23(金屬層13)與陶瓷基板11的接合界面之銀含有量在0.2mass%以下為佳，在0.1mass%以下更佳。
在本實施型態，從陶瓷基板11的接合面起向銅板22(電路層12)及銅板23(金屬層13)側50μm為止的領域之金屬間化合物相的面積率為15%以下之場合，在陶瓷基板11的接合面附近，硬且脆的金屬間化合物相存在不多，而可以確實抑制高溫動作時的陶瓷基板11破裂。 從陶瓷基板11的接合面起向銅板22(電路層12)及銅板23(金屬層13)側50μm為止的領域之金屬間化合物相的面積率為10%以下佳，在8%以下更佳。
根據本實施型態之絕緣電路基板10(銅/陶瓷接合體)之製造方法，由於具備：在銅板22，23與陶瓷基板11之間配置鎂(鎂膜25)之鎂配置製程S01，中介鎂膜25將銅板22、23與陶瓷基板11加以層積之層積製程S02，與將層積的銅板22、陶瓷基板11、銅板23於層積方向加壓之狀態下、在真空氛圍下予以加熱處理並接合之接合製程S03，所以在接合界面沒有殘留氣體或有機物的殘渣等。
鎂配置製程S01中，由於將鎂量設在0.17mg/ cm2 以上3.48mg/cm2 以下的範圍內，而能充分得到界面反應所需要的液相。因而，可得到銅板22，23與陶瓷基板11確實地被接合的絕緣電路基板10(銅/陶瓷接合體)。 由於在接合並不使用鈦，鋯，鈮，鉿，所以在陶瓷基板11的接合面附近不存在鈦，鋯，鈮，鉿的氮化物相或含鈦，鋯，鈮，鉿的金屬間化合物相，而能得到可以抑制高溫動作時陶瓷基板11破裂之絕緣電路基板10(銅/陶瓷接合體)。 接合上並不使用銀，因而可以得到耐遷移性優異的絕緣電路基板10(銅/陶瓷接合體)。
在鎂量未滿0.17mg/cm2 之場合，所發生的液相的量不足，可能降低接合率。此外，在鎂量超過3.48mg/cm2 之場合，所發生的液相的量變得過剩，有可能液相從接合界面漏出來，無法製造出特定形狀的接合體。此外，所發生的液相的量過剩，有可能銅-鎂金屬間化合物相生成過剩，陶瓷基板11發生破裂。 由於上述情事，本實施型態係將鎂量設在0.17mg/cm2 以上3.48mg/cm2 以下之範圍內。 鎂量的下限為0.24mg/cm2 以上佳，在0.32mg/cm2 以上更佳。另一方面，鎂量的上限為2.38mg/cm2 以下佳，在1.58mg/cm2 以下更佳。
在本實施型態，由於接合製程S03之加壓荷重設在0.049MPa以上，而可以使陶瓷基板11與銅板22，23與鎂膜25密貼，可以在加熱時促進該等的界面反應。由於接合製程S03之加壓荷重設在3.4MPa以下，而可以抑制接合製程S03中陶瓷基板11的破裂等。 接合製程S03之加壓荷重的下限設在0.098MPa以上佳，在0.294MPa以上更佳。另一方面，接合製程S03之加壓荷重的上限設在1.96MPa以下佳，在0.98MPa以下更佳。
本實施型態中，由於將接合製程S03之加熱溫度、設在比銅與鎂的共晶溫度還高的500℃以上，而可以在接合界面充分地產生液相。另一方面，由於接合製程S03之加熱溫度設在850℃以下，所以能抑制液相過剩地生成。此外，陶瓷基板11上的熱負荷變小，可抑制陶瓷基板11的劣化。 接合製程S03之加熱溫度的下限設在600℃以上佳，在680℃以上更佳。另一方面，接合製程S03之加熱溫度的上限設在800℃以下佳，在760℃以下更佳。
於本實施型態，在將接合製程S03之真空度設在1×10-6 Pa以上5×10-2 Pa以下之範圍內之場合，可以抑制鎂膜25的氧化，且可以確實地接合陶瓷基板11與銅板22，23。 接合製程S03之真空度的下限設在1×10-4 Pa以上佳，在1×10-3 Pa以上更佳。另一方面，接合製程S03之真空度的上限設在1×10-2 Pa以下佳，在5×10-3 Pa以下更佳。
於本實施型態，在將接合製程S03之加熱溫度下的保持時間設在5分鐘以上180分鐘以下之範圍內之場合，可以充分地形成液相，且可以確實地接合陶瓷基板11與銅板22，23。 接合製程S03之加熱溫度下的保持時間的下限設在10分鐘以上佳，在30分鐘以上更佳。另一方面，接合製程S03之加熱溫度下的保持時間的上限設在150分鐘以下佳，在120分鐘以下更佳。
以上說明了本發明之實施型態，但本發明並不以此為限，在不逸脫本發明的技術思想的範圍可以適當地變更。 例如，說明中構成電路層或金屬層的銅板，採用無氧銅之壓延板，但並不以此為限，可以是由其他銅或銅合金構成者。 在本實施型態，說明了以銅板構成電路層及金屬層之型態，但並不限定於此，只要電路層及金屬層之至少一方是由銅板構成，另一方可以是由鋁板等的其他金屬板構成。
在本實施型態，說明了在鎂配置製程利用蒸鍍而將鎂膜成膜，但並不限定於此，而可以依其他方法將鎂膜成膜，抑或配置鎂箔。此外，也可以配置銅與鎂的包覆材。 抑或塗布鎂膏料及銅-鎂膏料。此外，抑或層積並配置銅膏料與鎂膏料。此時，鎂膏料亦可配置在銅板側或陶瓷基板側之任一側。此外，作為鎂，配置MgH2 亦可。
作為散熱裝置舉散熱板為例加以說明，但並不限定於此，散熱裝置的構造沒有特別限定。例如，可以是具有冷媒流通的流路的構造或具備冷卻片的構造。此外，作成散熱裝置也可以使用鋁或含鋁合金的複合材料(例如AlSiC等)。 再者，散熱裝置的頂板部或散熱板與金屬層之間，可以設有鋁或鋁合金或者含鋁的複合材料(例如AlSiC等)構成的緩衝層。
於本實施型態，說明了在絕緣電路基板的電路層搭載功率半導體元件而構成功率模組之型態，但並不限定於此。例如，可以在絕緣電路基板搭載發光二極體元件而構成發光二極體模組，抑或在絕緣電路基板的電路層搭載熱電元件而構成熱電模組。 [實施例]
(本發明例1～12) 說明供確認本發明的有效性而進行之確認實驗。 在40mm見方的由氮化矽構成的陶瓷基板的雙面，如表1所示方式層積配置鎂的銅板(無氧銅、37mm見方、厚度1.2mm)，依照表1所示的接合條件進行接合，形成銅/陶瓷接合體。陶瓷基板的厚度係作成厚0.32mm。此外，接合時真空爐的真空度為5×10-3 Pa。 從前例中，在陶瓷基板與銅板之間，以銀量為5.2mg/cm2 之方式配置銀-28mass%銅-6mass%鈦活性焊料。 此外，在接合製程S03，在從接合溫度(表1的「溫度(℃)」)降溫到480℃為止時，降溫速度係控制在以5℃/min的速度降溫。又，降溫速度係以氣體冷卻時的氣體分壓(有無隨冷卻風扇的循環)予以控制。
針對如此方式獲得的銅/陶瓷接合體，觀察接合界面後，確認了鎂固溶層、銅-鎂金屬間化合物相、鎂氮化物相。此外，以以下之方式評價銅/陶瓷接合體的初期接合率、冷熱循環後陶瓷基板的破裂、遷移性。
(鎂固溶層) 使用EPMA裝置(日本電子(股)公司製的JXA-8539F)，並於倍率2000倍、加速電壓15kV的條件下將銅板與陶瓷基板之接合界面進行觀察包含接合界面的領域(400μm×600μm)，從陶瓷基板表面起向銅板側於10μm間隔，因應銅板的厚度於10點以上20點以下的範圍進行定量分析，以鎂濃度0.01原子%以上之領域作為鎂固溶層。
(銅-鎂金屬間化合物相的面積率) 將銅板與陶瓷基板製接合界面，使用電子微探分析儀(日本電子(股)公司製之JXA-8539F)，以倍率2000倍、加速電壓15kV之條件下取得包含接合界面的領域(400μm×600μm)的鎂的元素MAP，依發現鎂存在的領域內之定量分析的5點平均，以滿足銅濃度為5原子%以上、且鎂濃度為30原子%以上70原子%以下之領域作為銅-鎂金屬間化合物相。 接著，算出從陶瓷基板的接合面起向銅板側50μm為止的領域之金屬間化合物相的面積率(%)。
(鎂氮化物相) 使用透過型電子顯微鏡(FEI公司製的Titan ChemiSTEM)並於加速電壓200kV、倍率4萬倍進行觀察銅板與陶瓷基板之接合界面，鎂與氮共存之領域存在，以該領域的鎂濃度為50原子%以上70原子%以下之場合評價為「有」鎂氮化物層。
(初期接合率) 銅板與陶瓷基板之接合率，係使用超音波探傷裝置(日本日立Power Solutions(股)公司製造之FineSAT200)並採用以下公式求出。所謂初期接合面積，是接合前之應該接合的面積，亦即銅板的接合面的面積。在超音波探傷影像，剝離以接合部內的白色部來顯示，因而此白色部的面積為剝離面積。 (初期接合率)={(初期接合面積)-(剝離面積)}/(初期接合面積)
(陶瓷基板之破裂) 使用冷熱衝擊試驗機(日本ESPEC(股)公司製之TSA-72ES)，於氣相下、實施-50℃×10分←→150℃×10分之1000回循環。 評價負荷上述的冷熱循環後陶瓷基板有無破裂。
(遷移) 在電路層於絕緣分離的電路圖案間距離0.5mm、溫度85℃、濕度85%RH、電壓DC50V之條件下，在放置2000小時後，測定電路圖案間的電性電阻，以電阻值成1×106 Ω以下之場合判斷為短路(遷移發生)，將遷移的評價設為「B」。於與上述相同條件下，在放置2000小時後，測定電路圖案間的電性電阻，以電阻值比1×106 Ω大之場合，判斷為遷移未發生，將遷移的評價設為「A」。
評價結果顯示於表2。此外，將本發明例5之觀察結果顯示於圖5。
在鎂配置製程，在鎂量0.11mg/cm2 比本發明的範圍還少的比較例1，由於在接合時液相不足，而無法形成接合體。因此，中止其後的評價。 在鎂配置製程，在鎂量6.34mg/cm2 比本發明的範圍還多的比較例2，由於在接合時液相生成過剩，液相從接合界面漏出來，而無法製造出特定形狀的接合體。因此，中止其後的評價。
在使用銀-銅-鈦焊料來接合陶瓷基板與銅板之從前例，遷移的評價判斷為「B」。推測是在接合界面存在銀的緣故。
相對地，在本發明例1～12，初期接合率高、且未發現陶瓷基板破裂。此外，遷移性也良好。 此外，如圖5所示，觀察接合界面之結果，觀察到鎂固溶層。此外，觀察到鎂氧化物層，在鎂固溶層的鎂氧化物層側發現鎂氮化物相。
(本發明例21～32) 銅/陶瓷接合體，係與上述本發明例1～12製作出的銅/陶瓷接合體同樣地製作，針對獲得的銅/陶瓷接合體，如以下方式評價的Cu2 Mg面積率、及超音波接合界面。 鎂固溶層、銅-鎂金屬間化合物相的面積率、及銅/陶瓷接合體的初期接合率之評價，係與上述本發明例1～12所進行的評價同樣地進行。
(降溫速度) 在接合製程S03，在從接合溫度(表3的「溫度(℃)」)降溫到480℃為止時，降溫速度係依表3所示的速度控制。
(Cu2 Mg的面積率) 上述銅-鎂金屬間化合物相之中，Cu2 Mg的面積率(%)、依以下的計算式定義、算出來。 Cu2 Mg的面積率(%)=Cu2 Mg的面積/(Cu2 Mg的面積+CuMg2 的面積)×100 「Cu2 Mg的面積」係設定鎂濃度為30at%以上60at%未滿之領域；「CuMg2 的面積」係設定鎂濃度為60at%以上70at%未滿之領域。
(超音波接合) 針對獲得的銅/陶瓷接合體，使用超音波金屬接合機(日本超音波工業(股)公司製的：60C-904)，將銅端子(10mm×5mm×1.5mm厚)於耦合(copulas)量0.5mm之條件下進行超音波接合。 在接合後，使用超音波探傷裝置((股)日立Power Solutions製的FineSAT200)，檢查銅板與陶瓷基板的接合界面，觀察到剝離的評價為「B」、都沒發現的為「A」。將評價結果顯示於表3。
隨接合製程S03後的降溫速度之不同，Cu2 Mg的面積率的數值、及超音波接合的接合性會改變。 由表3所式的結果可知，降溫速度為20℃/min佳，在10℃/min更佳。 由表3所示的結果可知，銅-鎂金屬間化合物相之中，Cu2 Mg的面積率70%以上為佳，在85%以上更佳，90%以上又更佳。
由上述確認，根據本發明例，可以提供將銅構件與陶瓷構件確實地接合，同時耐遷移性優異，並且在高溫動作時可以抑制陶瓷破裂發生之銅/陶瓷接合體(絕緣電路基板)。
還確認，根據本發明例，藉由控制從接合溫度到480℃為止的降溫溫度的速度，可以提供銅構件與陶瓷構件確實地接合、超音波接合性優異之銅/陶瓷接合體(絕緣電路基板)。 [產業上利用可能性]
根據本發明，可以提供將銅構件與陶瓷構件確實地接合，同時耐遷移性優異，並且在高溫動作時可以抑制陶瓷破裂發生之銅/陶瓷接合體、絕緣電路基板、及上述之銅/陶瓷接合體之製造方法、絕緣電路基板之製造方法。
10:絕緣電路基板 11:陶瓷基板 12:電路層 13:金屬層 22、23:銅板 31:鎂氧化物層 32:鎂固溶層 35:鎂氮化物相
圖1係使用本發明實施型態之絕緣電路基板(銅/陶瓷接合體)之功率模組之概略說明圖。 圖2係本發明實施型態之絕緣電路基板(銅/陶瓷接合體)的電路層(銅構件)及金屬層(銅構件)與陶瓷基板(陶瓷構件)之接合界面之模式圖。 圖3係顯示本發明實施型態之絕緣電路基板(銅/陶瓷接合體)之製造方法之流程圖。 圖4係顯示本發明實施型態之絕緣電路基板(銅/陶瓷接合體)之製造方法之說明圖。 圖5係本發明例5之銅/陶瓷接合體之銅板與陶瓷基板之接合界面之觀察結果。
11:陶瓷基板
12:電路層
13:金屬層
22、23:銅板
31:鎂氧化物層
32:鎂固溶層
35:鎂氮化物相

Claims (8)

  1. 一種銅/陶瓷接合體，係由銅或銅合金構成的銅構件、與由氮化矽構成的陶瓷構件接合而成之銅/陶瓷接合體，其特徵為：前述銅構件與前述陶瓷構件之間，係在前述陶瓷構件側形成鎂氧化物層，在該鎂氧化物層與前述銅構件之間形成鎂固溶在銅母相中之鎂固溶層；在前述鎂固溶層的前述鎂氧化物層側，存在鎂氮化物相；前述銅構件與前述陶瓷構件的接合界面之鈦，鋯，鈮，鉿的合計含有量在0.3mass%以下。
  2. 如申請專利範圍第1項記載之銅/陶瓷接合體，其中從前述陶瓷構件的接合面起向前述銅構件側50μm為止的領域之金屬間化合物相的面積率為15%以下。
  3. 一種絕緣電路基板，在由氮化矽構成的陶瓷基板的表面，接合由銅或銅合金構成的銅板而成之絕緣電路基板，其特徵為：前述銅板與前述陶瓷基板之間，係在前述陶瓷基板側形成鎂氧化物層，在該鎂氧化物層與前述銅板之間形成鎂固溶在銅母相中之鎂固溶層；在前述鎂固溶層的前述鎂氧化物層側，存在鎂氮化物 相；前述銅板與前述陶瓷基板的接合界面之鈦，鋯，鈮，鉿的合計含有量在0.3mass%以下。
  4. 如申請專利範圍第3項記載之絕緣電路基板，其中從前述陶瓷基板的接合面起向前述銅板側50μm為止的領域之金屬間化合物相的面積率為15%以下。
  5. 一種銅/陶瓷接合體之製造方法，製造申請專利範圍第1或2項記載之銅/陶瓷接合體之銅/陶瓷接合體之製造方法，其特徵係具備：在前述銅構件與前述陶瓷構件之間配置鎂之鎂配置製程，將前述銅構件與前述陶瓷構件、中介鎂而層積之層積製程，與在將中介鎂而層積的前述銅構件與前述陶瓷構件於層積方向加壓之狀態下，在真空氛圍下予以加熱處理並接合之接合製程；於前述鎂配置製程，將鎂量設在0.17mg/cm2以上3.48mg/cm2以下之範圍內，於前述接合製程，不使用鈦，鋯，鈮，鉿。
  6. 如申請專利範圍第5項記載之銅/陶瓷接合體之製造方法，其中 前述接合製程之加壓荷重係在0.049MPa以上3.4MPa以下之範圍內，加熱溫度係設在500℃以上850℃以下之範圍內。
  7. 一種申請專利範圍第3或4項記載之絕緣電路基板之製造方法，其特徵係具備：在前述銅板與前述陶瓷基板之間配置鎂之鎂配置製程，將前述銅板與前述陶瓷基板、中介鎂而層積之層積製程，與在將中介鎂而層積的前述銅板與前述陶瓷基板於層積方向加壓之狀態下，在真空氛圍下予以加熱處理並接合之接合製程；於前述鎂配置製程，將鎂量設在0.17mg/cm2以上3.48mg/cm2以下之範圍內，於前述接合製程，不使用鈦，鋯，鈮，鉿。
  8. 如申請專利範圍第7項記載之絕緣電路基板之製造方法，其中前述接合製程之加壓荷重係在0.049MPa以上3.4MPa以下之範圍內，加熱溫度係設在500℃以上850℃以下之範圍內。
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