TWI811414B - Polishing composition for magnetic disk substrate - Google Patents

Polishing composition for magnetic disk substrate Download PDF

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TWI811414B
TWI811414B TW108127247A TW108127247A TWI811414B TW I811414 B TWI811414 B TW I811414B TW 108127247 A TW108127247 A TW 108127247A TW 108127247 A TW108127247 A TW 108127247A TW I811414 B TWI811414 B TW I811414B
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abrasive composition
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TW202018053A (en
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安藤順一郎
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日商山口精研工業股份有限公司
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Abstract

提供一種研磨劑組合物,可實現維持研磨速度,且同時減少研磨後基板凹陷及滾降現象。該研磨劑組合物,係至少包含氧化鋁粒子、水溶性高分子化合物以及有機硫酸酯鹽化合物之含水組合物。在此,水溶性高分子化合物,係一種包含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,及/或以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物。 An abrasive composition is provided that can maintain the polishing speed and at the same time reduce the dent and roll-off phenomena of the substrate after polishing. The abrasive composition is an aqueous composition containing at least alumina particles, a water-soluble polymer compound, and an organic sulfate ester salt compound. Here, the water-soluble polymer compound is a mixture of a polymer containing a monomer having a carboxylic acid group as an essential monomer and a polymer containing a monomer having a sulfonic acid group as an essential monomer, and/or a mixture of Monomers with carboxylic acid groups and monomers with sulfonic acid groups are copolymers of essential monomers.

Description

磁碟基板用研磨劑組合物 Abrasive composition for disk substrates

本發明係關於一種用於研磨所謂磁記錄媒體如半導體、硬碟等電子組件之研磨劑組合物。特別係關於一種用於進行玻璃磁碟基板或鋁製磁碟基板等磁記錄媒體用基板之表面研磨之研磨劑組合物。並且,係關於一種用於進行於鋁合金製基板表面形成無電解鎳-磷電鍍皮膜之磁記錄媒體用鋁製磁碟基板之表面研磨之研磨劑組合物。 The present invention relates to an abrasive composition used for polishing so-called magnetic recording media such as semiconductors, hard disks and other electronic components. In particular, it relates to an abrasive composition used for surface polishing of magnetic recording medium substrates such as glass disk substrates or aluminum disk substrates. Furthermore, the present invention relates to an abrasive composition used for surface polishing of an aluminum disk substrate for magnetic recording media on which an electroless nickel-phosphorus plating film is formed on the surface of the aluminum alloy substrate.

傳統上,就生產效率之觀點而言,作為用於研磨鋁製磁碟基板之無電解鎳-磷電鍍皮膜表面之研磨劑組合物,一直使用將可實現較高研磨速度之氧化鋁粒子以水分散而成之研磨劑組合物。 Traditionally, from the viewpoint of production efficiency, as an abrasive composition for polishing the surface of the electroless nickel-phosphorus plating film of an aluminum disk substrate, alumina particles that can achieve a high polishing speed have been used with water. Dispersed abrasive composition.

以提升研磨速度、減少凹陷及減少滾降現象為目的,提出了在使用氧化鋁類研磨粒之研磨劑組合物中,使用各種結晶構造之氧化鋁粒子,使研磨速度提升並減少凹陷、滾降現象等高研磨面品質並存之方案。 In order to increase the grinding speed, reduce dents and reduce roll-off phenomena, it is proposed to use alumina particles with various crystal structures in abrasive compositions using alumina-based abrasive particles to increase the grinding speed and reduce dents and roll-off phenomena. A solution that coexists with high grinding surface quality such as phenomena.

在專利文獻1中,提出藉由使用含γ、δ、θ型之規定大小之氧化鋁研磨粒之研磨劑組合物,使研磨速度提高,能夠獲得較以往更高品質之研磨面。 Patent Document 1 proposes that by using an abrasive composition containing γ, δ, and θ-type alumina abrasive grains of predetermined sizes, the polishing speed can be increased and a higher-quality polished surface can be obtained than before.

在專利文獻2中,提出藉由使用含α-氧化鋁以外之氧化鋁即中間氧化鋁之研磨劑組合物,可降低表面凹陷程度,並提升研磨速度之方案。 Patent Document 2 proposes a method of reducing the degree of surface depression and increasing the polishing speed by using an abrasive composition containing aluminum oxide other than α-alumina, that is, intermediate alumina.

在專利文獻3中,提出藉由使用含α-氧化鋁、中間氧化鋁之研磨劑組合物,可達成高研磨速度,並減少凹陷之方案。然而,凹陷減少效果並不充分,而正尋求改良。 Patent Document 3 proposes a solution to achieve high polishing speed and reduce dents by using an abrasive composition containing α-alumina and intermediate alumina. However, the dent reduction effect is not sufficient, and improvements are being sought.

在專利文獻4中,提出在使用含研磨材、助磨劑與水之研磨材組合物研磨磁記錄媒體基板時,可藉由使用脂肪族類有機硫酸鹽作為助磨劑,以提高研磨速度並減少表面粗糙度之方案。然而,該方案對於研磨速度提升與表面粗糙度減少並不充分,而正尋求改良。 In Patent Document 4, it is proposed that when polishing a magnetic recording medium substrate using an abrasive composition containing abrasives, grinding aids and water, an aliphatic organic sulfate can be used as a grinding aid to increase the polishing speed and improve the stability of the magnetic recording medium substrate. Solution to reduce surface roughness. However, this solution is not sufficient for increasing the grinding speed and reducing surface roughness, and improvements are being sought.

[先前技術文獻] [Prior technical literature]

專利文獻 patent documents

專利文獻1:日本專利特開平11-268911號公報 Patent document 1: Japanese Patent Application Laid-Open No. 11-268911

專利文獻2:日本專利特開2001-89746號公報 Patent document 2: Japanese Patent Application Publication No. 2001-89746

專利文獻3:日本專利特開2005-23266號公報 Patent Document 3: Japanese Patent Application Publication No. 2005-23266

專利文獻4:國際公開第1998/021289號 Patent Document 4: International Publication No. 1998/021289

然而,如專利文獻1~4所述,若使用添加中間氧化鋁之研磨劑組合物研磨磁碟基板,將導致研磨後凹陷情況惡化等產品品質低落等問題。 However, as described in Patent Documents 1 to 4, if a polishing composition containing intermediate alumina is used to polish the disk substrate, problems such as deterioration of post-polishing dents and lower product quality will occur.

本發明之課題,在於維持研磨速度,且實現減少研磨後基板之凹陷程度及減少滾降現象。 The subject of the present invention is to maintain the polishing speed and reduce the degree of depression and roll-off phenomenon of the polished substrate.

本發明者等針對上述課題,潛心研究各種蝕刻劑之添加,發現可解決上述課題,進而完成本發明。也就是說,本發明係如下之研磨劑組合物。 In view of the above-mentioned problems, the present inventors devoted themselves to research on the addition of various etchants, found that the above-mentioned problems can be solved, and completed the present invention. That is, the present invention is the following abrasive composition.

〔1〕包含氧化鋁粒子、水溶性高分子化合物、有機硫酸酯鹽化合物以及水之磁碟基板用研磨劑組合物。其中該水溶性高分子化合物,係一種包含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,及/或以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物;而該有機硫酸酯鹽化合物如下通式(1)所示 R-O-SO3M (1)於式中,R表示碳數為5~21之直鏈或分支之烷基、烯基、烯丙基或烯丙烷基,M表示鹼金屬、鹼土族金屬、銨離子或有機陽離子。 [1] A polishing composition for magnetic disk substrates containing alumina particles, a water-soluble polymer compound, an organic sulfate ester salt compound, and water. The water-soluble polymer compound is a mixture of a polymer containing a monomer having a carboxylic acid group as an essential monomer and a polymer containing a monomer having a sulfonic acid group as an essential monomer, and/or a mixture having a monomer having a carboxylic acid group as an essential monomer. The monomer with carboxylic acid group and the monomer with sulfonic acid group are copolymers of essential monomers; and the organic sulfate ester salt compound is represented by the following general formula (1): RO-SO 3 M (1) where, R Represents a linear or branched alkyl, alkenyl, allyl or allyl group with a carbon number of 5 to 21, and M represents an alkali metal, alkaline earth metal, ammonium ion or organic cation.

〔2〕包含氧化鋁粒子、水溶性高分子化合物、有機硫酸酯鹽化合物以及水之磁碟基板用研磨劑組合物。其中該水溶性高分子化合物,係一種包含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,及/或以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物;而該有機硫酸酯鹽化合物如下通式(2)所示 R-O-(AO)n-SO3M (2)於式中,R表示碳數為5~21之直鏈或分支之烷基、烯基、烯丙基或烯丙烷基,AO表示碳數為2或3之氧伸烷基,n表示1~30之自然數,M表示鹼金屬、鹼土族金屬、銨離子或有機陽離子。 [2] A polishing composition for magnetic disk substrates containing alumina particles, a water-soluble polymer compound, an organic sulfate ester salt compound, and water. The water-soluble polymer compound is a mixture of a polymer containing a monomer having a carboxylic acid group as an essential monomer and a polymer containing a monomer having a sulfonic acid group as an essential monomer, and/or a mixture having a monomer having a carboxylic acid group as an essential monomer. The monomer with carboxylic acid group and the monomer with sulfonic acid group are copolymers of essential monomers; and the organic sulfate ester salt compound is represented by the following general formula (2): RO-(AO) n -SO 3 M (2) In the formula, R represents a linear or branched alkyl, alkenyl, allyl or allyl group with a carbon number of 5 to 21, AO represents an oxyalkylene group with a carbon number of 2 or 3, and n represents 1 to A natural number of 30, M represents an alkali metal, alkaline earth metal, ammonium ion or organic cation.

〔3〕如上述〔1〕或〔2〕所述之磁碟基板用研磨劑組合物,其中該水溶性高分子化合物即以具羧酸基之單體及具磺酸基之單體為 必需單體之共聚物,係一種以具羧酸基之單體與具磺酸基之單體及具醯胺基之單體為必需單體之共聚物。 [3] The abrasive composition for disk substrates as described in [1] or [2] above, wherein the water-soluble polymer compound is composed of a monomer having a carboxylic acid group and a monomer having a sulfonic acid group. The copolymer of essential monomers is a copolymer containing a monomer with a carboxylic acid group, a monomer with a sulfonic acid group and a monomer with an amide group as essential monomers.

〔4〕如上述〔1〕至〔3〕之任一項所述之磁碟基板用研磨劑組合物,其中該氧化鋁粒子含α-氧化鋁,且平均粒徑為0.1~2.0μm,且於該組合物中之濃度為1~50質量%。 [4] The abrasive composition for magnetic disk substrates according to any one of the above [1] to [3], wherein the alumina particles contain α-alumina, and the average particle diameter is 0.1 to 2.0 μm, and The concentration in the composition is 1 to 50% by mass.

〔5〕如上述〔1〕至〔4〕之任一項所述之磁碟基板用研磨劑組合物,其中該具羧酸基之單體係選自丙烯酸或其鹽類、甲基丙烯酸或其鹽類之單體。 [5] The abrasive composition for magnetic disk substrates according to any one of the above [1] to [4], wherein the monosystem having a carboxylic acid group is selected from the group consisting of acrylic acid or its salts, methacrylic acid or Monomers of its salts.

〔6〕如上述〔1〕至〔5〕之任一項所述之磁碟基板用研磨劑組合物,其中該具磺酸基之單體係選自異戊二烯磺酸、2-丙烯醯胺-2-甲基丙磺酸、2-甲基丙烯醯胺-2-甲基丙磺酸、苯乙烯磺酸、乙烯磺酸、丙烯磺酸、異戊烯磺酸、乙烯萘磺酸以及其鹽類之一種或兩種以上之單體。 [6] The abrasive composition for magnetic disk substrates according to any one of the above [1] to [5], wherein the monosystem having a sulfonic acid group is selected from the group consisting of isoprene sulfonic acid and 2-propylene. Amido-2-methylpropanesulfonic acid, 2-methacrylamide-2-methylpropanesulfonic acid, styrenesulfonic acid, ethylenesulfonic acid, propylenesulfonic acid, isopentenesulfonic acid, vinylnaphthalenesulfonic acid And one or more than two monomers of its salts.

〔7〕如上述〔3〕所述之磁碟基板用研磨劑組合物,其中該具醯胺基之單體係選自丙烯醯胺、甲基丙烯醯胺、N-烷基丙烯醯胺、N-烷基甲基丙烯醯胺之單體。 [7] The abrasive composition for disk substrates as described in the above [3], wherein the monosystem having an amide group is selected from the group consisting of acrylamide, methacrylamide, N-alkyl acrylamide, Monomer of N-alkyl methacrylamide.

〔8〕如上述〔1〕至〔7〕之任一項所述之磁碟基板用研磨劑組合物,其中以該具羧酸基之單體為必需單體之聚合物、以該具磺酸基之單體為必需單體之聚合物、以該具羧酸基之單體及具磺酸基之單體為必需單體之共聚物及以該具羧酸基之單體與具磺酸基之單體及具醯胺基之單體為必需單體之共聚物之重量平均分子量各為1,000以上且1,000,000以下。 [8] The abrasive composition for magnetic disk substrates according to any one of the above [1] to [7], wherein the monomer having a carboxylic acid group is a polymer that is an essential monomer, and the monomer having a sulfonate group is a polymer. Polymers in which the monomer with an acid group is an essential monomer, copolymers in which the monomer with a carboxylic acid group and a monomer with a sulfonic acid group are essential monomers, and copolymers in which the monomer with a carboxylic acid group and a monomer with a sulfonic acid group are essential monomers The weight average molecular weight of the copolymer in which the acid group monomer and the amide group-containing monomer are essential monomers is each between 1,000 and 1,000,000.

〔9〕如上述〔1〕至〔8〕之任一項所述之磁碟基板用研 磨劑組合物,其中該研磨劑組合物更含有酸及/或其鹽類,且pH值(25℃)範圍為0.1至4.0。 [9] The grinding machine for magnetic disk substrate according to any one of the above [1] to [8] An abrasive composition, wherein the abrasive composition further contains acid and/or its salts, and the pH value (25°C) ranges from 0.1 to 4.0.

〔10〕如上述〔1〕至〔9〕之任一項所述之磁碟基板用研磨劑組合物,其中該研磨劑組合物更含有氧化劑。 [10] The abrasive composition for magnetic disk substrates according to any one of the above [1] to [9], wherein the abrasive composition further contains an oxidizing agent.

〔11〕如上述〔1〕至〔10〕之任一項所述之磁碟基板用研磨劑組合物,用於研磨無電解鎳-磷電鍍之鋁製磁碟基板。 [11] The abrasive composition for magnetic disk substrates according to any one of the above [1] to [10], used for polishing electroless nickel-phosphorus electroplated aluminum magnetic disk substrates.

本發明之磁碟基板用研磨劑組合物,可維持研磨速度,且同時減少基板表面之凹陷程度及減少滾降現象。 The abrasive composition for magnetic disk substrates of the present invention can maintain the polishing speed, and at the same time reduce the degree of depression on the surface of the substrate and reduce the roll-off phenomenon.

A、B、C、D:點 A, B, C, D: points

h:垂線 h: vertical line

j、k、m、t:線 j, k, m, t: line

圖1係針對研磨基板之表面時測定滾降現象進行說明之圖。 FIG. 1 is a diagram explaining the measurement of the roll-off phenomenon when polishing the surface of a substrate.

以下說明本發明之實施方式,唯本發明並不限定於以下實施方式,本發明所屬技術技術領域中具有通常知識者可在不背離本發明之趣旨範圍內,對以下實施方式進行適當變更、改良等,而仍屬於本發明之範圍。 The following describes the embodiments of the present invention, but the present invention is not limited to the following embodiments. Those with ordinary knowledge in the technical field to which the present invention belongs can make appropriate changes and improvements to the following embodiments without departing from the scope of the invention. etc., and still belong to the scope of the present invention.

1.研磨劑組合物 1. Abrasive composition

本發明之研磨劑組合物,係至少包含氧化鋁粒子、水溶性高分子化合物以及有機硫酸酯鹽化合物之含水組合物。在此,水溶性高分子化合物,係一種包含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,及/或以具羧酸基之單體及具磺酸基之單體 為必需單體之共聚物。 The abrasive composition of the present invention is an aqueous composition containing at least alumina particles, a water-soluble polymer compound, and an organic sulfate ester salt compound. Here, the water-soluble polymer compound is a mixture of a polymer containing a monomer having a carboxylic acid group as an essential monomer and a polymer containing a monomer having a sulfonic acid group as an essential monomer, and/or a mixture of Monomers with carboxylic acid groups and monomers with sulfonic acid groups It is a copolymer of essential monomers.

(1)氧化鋁粒子 (1)Alumina particles

本發明之磁碟基板用研磨劑組合物所含膠質氧化矽,平均粒徑(D50)較佳為5~200nm。藉由使平均粒徑(D50)為5nm以上,可抑制研磨速度之低落。藉由使平均粒徑(D50)為200nm以下,可抑制表面平滑度之惡化。膠質氧化矽之平均粒徑(D50),更佳為10~150nm,尤佳為20~120nm。 The colloidal silicon oxide contained in the abrasive composition for disk substrates of the present invention preferably has an average particle size (D50) of 5 to 200 nm. By setting the average particle diameter (D50) to 5 nm or more, a decrease in the polishing speed can be suppressed. By setting the average particle diameter (D50) to 200 nm or less, deterioration of surface smoothness can be suppressed. The average particle size (D50) of colloidal silicon oxide is preferably 10~150nm, especially 20~120nm.

作為製備氧化鋁之際之原料,可列舉三水鋁石:Al2O3‧3H2O、水鋁石:Al2O3‧H2O、似水鋁石:Al2O3‧nH2O(n=1~2)等。該等氧化鋁原料,例如可透過如下方式調製。 Raw materials for preparing alumina include gibbsite: Al 2 O 3 ‧3H 2 O, diaspore: Al 2 O 3 ‧H 2 O, and diaspore: Al 2 O 3 ‧nH 2 O(n=1~2) etc. The alumina raw materials can be prepared in the following manner, for example.

三水鋁石:Al2O3‧3H2O Gibbsite: Al 2 O 3 ‧3H 2 O

將鋁礬土以氫氧化鈉之熱溶液進行溶解,再將過濾去除不溶成分後所得之溶液進行冷卻,最後將其結果所得之沈澱物經乾燥處理後,可得三水鋁石。 Dissolve bauxite with a hot solution of sodium hydroxide, then filter the solution to remove insoluble components and cool it. Finally, the resulting precipitate is dried to obtain gibbsite.

水鋁石:Al2O3‧H2O Diaspore: Al 2 O 3 ‧H 2 O

將金屬鋁與乙醇反應後所得之烷氧化鋁:Al(OR)3加水分解後,可得水鋁石。 Aluminum alkoxide: Al(OR) 3 obtained by reacting metal aluminum with ethanol is hydrolyzed to obtain diaspore.

似水鋁石:Al2O3‧nH2O(n=1~2) Diaspore: Al 2 O 3 ‧nH 2 O(n=1~2)

將三水鋁石於鹼性環境氣體下,以水蒸氣處理後,可得似水鋁石。 After treating the gibbsite with water vapor under an alkaline ambient gas, a gibbsite-like stone can be obtained.

將該等氧化鋁原料經燒成處理後,可得α-氧化鋁、γ-氧化鋁、δ-氧化鋁、θ-氧化鋁等。 After the alumina raw materials are fired, α-alumina, γ-alumina, δ-alumina, θ-alumina, etc. can be obtained.

氧化鋁粒子之平均粒徑(D50),較佳為0.1~2.0μm,尤佳 為0.2~1.0μm。藉由使氧化鋁粒子之平均粒徑為0.1μm以上,可抑制研磨速度之低落。藉由使氧化鋁粒子之平均粒徑為2.0μm以下,可抑制研磨後之凹陷程度惡化。 The average particle size (D50) of alumina particles is preferably 0.1~2.0μm, especially is 0.2~1.0μm. By setting the average particle diameter of the alumina particles to 0.1 μm or more, a decrease in the polishing speed can be suppressed. By setting the average particle diameter of the alumina particles to 2.0 μm or less, deterioration of the degree of depression after polishing can be suppressed.

氧化鋁粒子佔研磨劑組合物全體之濃度,較佳為1~50質量%,尤佳為2~40質量%。藉由使氧化鋁粒子之濃度為1質量%以上,可抑制研磨速度之低落。藉由使氧化鋁粒子之濃度為50質量%以下,無需使用到不必要之氧化鋁粒子,可更經濟並有利地進行研磨。 The concentration of alumina particles in the entire abrasive composition is preferably 1 to 50 mass %, particularly preferably 2 to 40 mass %. By setting the concentration of alumina particles to 1% by mass or more, a decrease in the polishing speed can be suppressed. By setting the concentration of alumina particles to 50% by mass or less, unnecessary use of alumina particles is not required, and grinding can be performed more economically and profitably.

(2)水溶性高分子化合物 (2) Water-soluble polymer compounds

用於本發明之水溶性高分子化合物,係含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,及/或具羧酸基之單體及具磺酸基之單體以為必需單體之共聚物。此外,亦可使用該等以外之單體。作為具羧酸基之單體及具磺酸基之單體以外之單體,例如可列舉具醯胺基之單體。 The water-soluble polymer compound used in the present invention is a mixture containing a polymer containing a monomer having a carboxylic acid group as an essential monomer and a polymer containing a monomer having a sulfonic acid group as an essential monomer, and/or The monomer with carboxylic acid group and the monomer with sulfonic acid group are copolymers of essential monomers. In addition, monomers other than these may also be used. Examples of the monomer other than the monomer having a carboxylic acid group and the monomer having a sulfonic acid group include a monomer having a amide group.

(2-1)具羧酸基之單體 (2-1) Monomers with carboxylic acid groups

作為具羧酸基之單體,較佳為使用不飽和脂肪族醯胺及其鹽類。更具體而言,可列舉丙烯酸、甲基丙烯酸、順丁烯二酸、伊康酸及該等之鹽類。作為鹽類,可列舉鈉鹽、鉀鹽、鎂鹽、銨鹽、胺鹽、烷基銨鹽等。 As the monomer having a carboxylic acid group, unsaturated aliphatic amide and its salts are preferably used. More specifically, acrylic acid, methacrylic acid, maleic acid, itaconic acid, and salts thereof are included. Examples of salts include sodium salts, potassium salts, magnesium salts, ammonium salts, amine salts, alkylammonium salts, and the like.

水溶性高分子化合物中,可根據具羧酸基之單體,是以酸之狀態存在之比例較多,抑或是以鹽之狀態存在之比例較多,來評價水溶性高分子化合物之pH值。若以酸存在之比例愈高,其pH值變得愈低,若以鹽存在之比例愈高,其pH值變得愈高。在本發明中,例如,在水溶性高分子化合物濃度為10質量%之水溶液中,可使用pH值(25℃)為0.1~13之範 圍之水溶性高分子化合物。 Among water-soluble polymer compounds, the pH value of water-soluble polymer compounds can be evaluated based on whether the proportion of monomers with carboxylic acid groups that exist in the acid state is greater, or whether the monomers that have carboxylic acid groups exist in the salt state. . The higher the proportion of acid present, the lower the pH value becomes; the higher the proportion of salt present, the higher the pH value becomes. In the present invention, for example, in an aqueous solution with a water-soluble polymer compound concentration of 10% by mass, a pH value (25°C) in the range of 0.1 to 13 can be used. Surrounded by water-soluble polymer compounds.

(2-2)具磺酸基之單體 (2-2) Monomers with sulfonic acid groups

作為具磺酸基之單體之具體範例,可列舉異戊二烯磺酸、2-丙烯醯胺-2-甲基丙磺酸、2-甲基丙烯醯胺-2-甲基丙磺酸、苯乙烯磺酸、乙烯磺酸、丙烯磺酸、異戊烯磺酸、乙烯萘磺酸及該等之鹽類等。可自此類當中選擇一種或兩種以上作為單體使用。較佳可列舉2-丙烯醯胺-2-甲基丙磺酸、2-甲基丙烯醯胺-2-甲基丙磺酸及該等之鹽類等。 Specific examples of the monomer having a sulfonic acid group include isoprene sulfonic acid, 2-acrylamide-2-methylpropanesulfonic acid, and 2-methacrylamide-2-methylpropanesulfonic acid. , styrene sulfonic acid, ethylene sulfonic acid, propylene sulfonic acid, isopentenesulfonic acid, vinyl naphthalene sulfonic acid and their salts, etc. One or two or more types of these can be selected and used as a single substance. Preferred examples include 2-acrylamide-2-methylpropanesulfonic acid, 2-methacrylamide-2-methylpropanesulfonic acid, and salts thereof.

(2-3)其他單體 (2-3)Other monomers

用於本發明之水溶性高分子化合物,係以具羧酸基之單體及以具磺酸基之單體為必需單體,唯亦可使用該等以外之單體。例如,亦可使用具醯胺基之單體。具體而言,可使用丙烯醯胺、甲基丙烯醯胺、N-烷基丙烯醯胺、N-烷基甲基丙烯醯胺等。 The water-soluble polymer compound used in the present invention uses a monomer having a carboxylic acid group and a monomer having a sulfonic acid group as essential monomers, but monomers other than these may also be used. For example, monomers having amide groups can also be used. Specifically, acrylamide, methacrylamide, N-alkyl acrylamide, N-alkyl methacrylamide, etc. can be used.

作為N-烷基丙烯醯胺、N-烷基甲基丙烯醯胺之具體範例,可列舉N-甲基丙烯醯胺、N-乙基丙烯醯胺、N-n-丙基丙烯醯胺、N-異丙基丙烯醯胺、N-n-丁基丙烯醯胺、N-異丁基丙烯醯胺、N-二級丁基丙烯醯胺、N-叔丁基丙烯醯胺、N-甲基甲基丙烯醯胺、N-乙基甲基丙烯醯胺、N-n-丙基甲基丙烯醯胺、N-異丙基甲基丙烯醯胺、N-n-丁基甲基丙烯醯胺、N-異丁基甲基丙烯醯胺、N-二級丁基甲基丙烯醯胺、N-叔丁基甲基丙烯醯胺等。 Specific examples of N-alkylacrylamide and N-alkylmethacrylamide include N-methacrylamide, N-ethylacrylamide, N-n-propylacrylamide, and N- Isopropylacrylamide, N-n-butylacrylamide, N-isobutylacrylamide, N-secondary butylacrylamide, N-tert-butylacrylamide, N-methylmethacrylamide Amide, N-ethylmethacrylamide, N-n-propylmethacrylamide, N-isopropylmethacrylamide, N-n-butylmethacrylamide, N-isobutylmethacrylamide , N-secondary butyl methacrylamide, N-tert-butyl methacrylamide, etc.

(2-4)聚合物之混合物 (2-4)Polymer mixture

用於本發明之水溶性高分子化合物,亦可為含以具羧酸基之單體為必需單體之聚合物與具以磺酸基之單體為必需單體之聚合物之混合物。該情 況下,作為構成混合物之聚合物,作為以具羧酸基之單體為必需單體之聚合物,可列舉將具羧酸基之單體聚合而成之聚合物、具羧酸基之單體與具磺酸基之單體之共聚物、具羧酸基之單體與其他單體之共聚物、具羧酸基之單體與具磺酸基之單體與其他單體之共聚物等。 The water-soluble polymer compound used in the present invention may also be a mixture containing a polymer containing a monomer having a carboxylic acid group as an essential monomer and a polymer containing a monomer having a sulfonic acid group as an essential monomer. The situation In this case, as the polymer constituting the mixture, as the polymer containing a monomer having a carboxylic acid group as an essential monomer, a polymer obtained by polymerizing a monomer having a carboxylic acid group, a monomer having a carboxylic acid group, etc. Copolymers of monomers with sulfonic acid groups, copolymers of monomers with carboxylic acid groups and other monomers, copolymers of monomers with carboxylic acid groups, monomers with sulfonic acid groups and other monomers wait.

此外,作為以具磺酸基之單體為必需單體之聚合物,可列舉將具磺酸基之單體聚合而成之聚合物、具羧酸基之單體與具磺酸基之單體之共聚物、具磺酸基之單體與其他單體之共聚物、具羧酸基之單體與具磺酸基之單體與其他單體之共聚物等。 In addition, examples of the polymer containing a monomer having a sulfonic acid group as an essential monomer include a polymer obtained by polymerizing a monomer having a sulfonic acid group, a monomer having a carboxylic acid group, and a monomer having a sulfonic acid group. Copolymers of monomers, copolymers of monomers with sulfonic acid groups and other monomers, copolymers of monomers with carboxylic acid groups, monomers with sulfonic acid groups and other monomers, etc.

含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,係自該等以具羧酸基之單體為必需單體之聚合物及以具磺酸基之單體為必需單體之聚合物當中,各一種以上之聚合物之混合物。混合物中,以具羧酸基之單體為必需單體之聚合物之比例,較佳為5~95質量%,尤佳為8~92質量%,更佳為10~90質量%。混合物中,以具磺酸基之單體為必需單體之聚合物之比例,較佳為5~95質量%,尤佳為8~92質量%,更佳為10~90質量%。 Mixtures containing polymers containing monomers with carboxylic acid groups as essential monomers and polymers containing monomers with sulfonic acid groups as essential monomers are derived from those containing monomers with carboxylic acid groups as essential monomers. A mixture of more than one polymer each of polymers containing monomers and polymers containing monomers with sulfonic acid groups as essential monomers. In the mixture, the proportion of the polymer in which the monomer with a carboxylic acid group is an essential monomer is preferably 5 to 95 mass %, more preferably 8 to 92 mass %, and more preferably 10 to 90 mass %. In the mixture, the proportion of the polymer in which the monomer with a sulfonic acid group is an essential monomer is preferably 5 to 95 mass %, more preferably 8 to 92 mass %, and more preferably 10 to 90 mass %.

(2-5)共聚物 (2-5)Copolymer

用於本發明之水溶性高分子化合物,亦可為以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物。共聚物中,以具羧酸基之單體為構成單位之比例,較佳為5~95莫耳%,尤佳為8~92莫耳%,更佳為10~90莫耳%。以具磺酸基之單體為構成單位之比例,較佳為5~95莫耳%,尤佳為8~92莫耳%,更佳為10~90莫耳%。 The water-soluble polymer compound used in the present invention may also be a copolymer containing a monomer having a carboxylic acid group and a monomer having a sulfonic acid group as essential monomers. In the copolymer, the proportion of monomers with carboxylic acid groups as constituent units is preferably 5 to 95 mol%, more preferably 8 to 92 mol%, and more preferably 10 to 90 mol%. The proportion of the monomer having a sulfonic acid group as the constituent unit is preferably 5 to 95 mol%, more preferably 8 to 92 mol%, and more preferably 10 to 90 mol%.

(2-6)水溶性高分子化合物之製備方法 (2-6) Preparation method of water-soluble polymer compounds

水溶性高分子化合物之製備方法雖無特殊限制,然較佳為水溶液聚合法。藉由水溶液聚合法,可形成均一溶液而獲得水溶性高分子化合物。上述水溶液聚合中之聚合溶媒較佳為水性溶媒,特佳為水。此外,為提升上述單體成分對溶媒之溶解性,可在不對各單體之聚合造成不良影響之範圍內,適當加入有機溶媒。上述有機溶媒的實例包含異丙基乙醇等乙醇類以及丙酮等酮類。上述溶媒可單獨使用一種,或組合兩種以上使用。 Although the method for preparing the water-soluble polymer compound is not particularly limited, an aqueous solution polymerization method is preferred. Through the aqueous solution polymerization method, a uniform solution can be formed to obtain a water-soluble polymer compound. The polymerization solvent in the above aqueous solution polymerization is preferably an aqueous solvent, particularly water. In addition, in order to improve the solubility of the above-mentioned monomer components in the solvent, an organic solvent can be appropriately added within the range that does not adversely affect the polymerization of each monomer. Examples of the organic solvent include ethanols such as isopropyl ethanol and ketones such as acetone. The above-mentioned solvents may be used alone or in combination of two or more.

以下說明運用上述水性溶媒之水溶性高分子化合物之製備方法。在聚合反應過程中,可使用眾所周知之聚合起始劑,特佳為使用自由基聚合起始劑。自由基聚合起始劑的實例包含:過硫酸鈉、過硫酸鉀或過硫酸銨等過硫酸鹽;叔丁基氫過氧化物等氫過氧化物類;過氧化氫等水溶性過氧化物、甲基乙基酮過氧化物、環己酮過氧化物等酮過氧化物類;二叔丁基過氧化物、叔丁基異丙苯過氧化物等二烷基過氧化物類等之油溶性過氧化物;偶氮雙異丁腈、2,2-偶氮雙(2-甲基丙脒)二氫氯化物等偶氮化合物。該等過氧化物類之自由基聚合起始劑可僅使用一種,亦可選擇兩種以上併用。上述過氧化物類之自由基聚合起始劑當中,若從容易控制所生成之水溶性高分子化合物之分子量之角度而言,較佳為過硫酸鹽或偶氮化合物,特佳為偶氮雙異丁腈。 The following describes the preparation method of the water-soluble polymer compound using the above-mentioned aqueous solvent. During the polymerization reaction, well-known polymerization initiators can be used, and a free radical polymerization initiator is particularly preferred. Examples of radical polymerization initiators include persulfates such as sodium persulfate, potassium persulfate, and ammonium persulfate; hydroperoxides such as tert-butyl hydroperoxide; water-soluble peroxides such as hydrogen peroxide; Methyl ethyl ketone peroxide, cyclohexanone peroxide and other ketone peroxides; oils such as di-tert-butyl peroxide, tert-butylcumyl peroxide and other dialkyl peroxides Soluble peroxide; azo compounds such as azobisisobutyronitrile, 2,2-azobis(2-methylpropionamidine)dihydrochloride. Only one type of peroxide radical polymerization initiator may be used, or two or more types may be used in combination. Among the above-mentioned peroxide radical polymerization initiators, from the viewpoint of easy control of the molecular weight of the produced water-soluble polymer compound, persulfate or azo compound is preferred, and azobis is particularly preferred. Isobutyronitrile.

儘管上述自由基聚合起始劑之用量無特殊限制,但若根據水溶性高分子化合物之所有單體之總質量而言,較佳為以0.1~15質量%之比例使用,特佳為以0.5~10質量%之比例使用。藉由將該比例提升至0.1質量%以上,可提升共聚合率,而將比例控制在15質量%以下,可提升水溶性高分子化合物之穩定性。 Although the amount of the above-mentioned free radical polymerization initiator is not particularly limited, based on the total mass of all monomers of the water-soluble polymer compound, it is preferably used in a proportion of 0.1 to 15 mass %, and particularly preferably 0.5 Use the ratio of ~10% by mass. By increasing the ratio to more than 0.1 mass%, the copolymerization rate can be increased, and controlling the ratio below 15 mass% can improve the stability of the water-soluble polymer compound.

此外,根據情況,水溶性高分子化合物,可使用水溶性氧化還原類聚合起始劑進行製備。氧化還原類聚合起始劑的實例包含氧化劑(如上述之過氧化物)以及重亞硫酸鈉、重亞硫酸銨、亞硫酸銨、氫亞硫酸鹽鈉等還原劑或鐵明礬及鉀明礬等之組合。 In addition, depending on the situation, the water-soluble polymer compound can be prepared using a water-soluble redox polymerization initiator. Examples of the redox polymerization initiator include an oxidizing agent (such as the above-mentioned peroxide) and a reducing agent such as sodium bisulfite, ammonium bisulfite, ammonium sulfite, sodium hydrosulfite, or a combination of iron alum and potassium alum.

在製備水溶性高分子合物之過程中,為調整分子量,可於聚合系統中適當添加鏈鎖轉移劑。鏈鎖轉移劑的實例包含亞磷酸鈉、次亞磷酸鈉、次亞磷酸鉀、亞硫酸鈉、亞硫酸氫鈉、巰基醋酸、巰基二乙基酮酸、硫乙醇酸、2-丙硫醇、2-巰基乙醇及硫苯酚等。 In the process of preparing water-soluble polymer compounds, in order to adjust the molecular weight, a chain transfer agent can be appropriately added to the polymerization system. Examples of chain transfer agents include sodium phosphite, sodium hypophosphite, potassium hypophosphite, sodium sulfite, sodium bisulfite, thioglycolic acid, mercaptodiethylketo acid, thioglycolic acid, 2-propanethiol, 2- Mercaptoethanol and thiophenol, etc.

製備水溶性高分子化合物時之聚合溫度並無特別限制,但以在聚合溫度為60~100℃時製備較佳。藉由使聚合溫度達60℃以上,可使聚合反應順利進行,且產能表現優異,而藉由控制在100℃以下,可抑制著色。 The polymerization temperature when preparing the water-soluble polymer compound is not particularly limited, but it is preferably prepared at a polymerization temperature of 60 to 100°C. By setting the polymerization temperature to 60°C or above, the polymerization reaction can proceed smoothly and the productivity is excellent, and by controlling it below 100°C, coloring can be suppressed.

此外,聚合反應可於加壓或減壓下進行,然加壓或減壓反應用的設備需外加成本,故較佳為在常壓下進行。聚合反應進行時間較佳為2~20小時,特佳為3~10小時。 In addition, the polymerization reaction can be carried out under pressure or reduced pressure. However, equipment for the pressure or reduced pressure reaction requires additional costs, so it is preferably carried out under normal pressure. The preferred polymerization reaction time is 2 to 20 hours, particularly preferably 3 to 10 hours.

聚合反應後,可依需使用鹼性化合物進行中和反應。用於中和反應之鹼性化合物的實例包含:氫氧化鈉或氫氧化鉀等鹼金屬氫氧化物,氫氧化鈣、氫氧化鎂等鹼土金屬氫氧化物,氨水,以及單乙醇胺、二乙醇胺、三乙醇胺等有機胺等。 After the polymerization reaction, a basic compound can be used for neutralization reaction if necessary. Examples of alkaline compounds used in the neutralization reaction include: alkali metal hydroxides such as sodium hydroxide or potassium hydroxide, alkaline earth metal hydroxides such as calcium hydroxide and magnesium hydroxide, ammonia water, and monoethanolamine, diethanolamine, Organic amines such as triethanolamine, etc.

在水溶性高分子化合物濃度為10質量%之水溶液中,中和後或無實施中和反應時之pH值(25℃)較佳為2~9,更加為3~8。 In an aqueous solution with a water-soluble polymer compound concentration of 10% by mass, the pH value (25°C) after neutralization or when no neutralization reaction is performed is preferably 2 to 9, and more preferably 3 to 8.

(2-7)重量平均分子量 (2-7) Weight average molecular weight

構成用於本發明之水溶性高分子化合物之以具羧酸基之單體為必需單 體之聚合物、以具磺酸基之單體為必需單體之聚合物及、以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物、以具羧酸基之單體與具磺酸基之單體及具醯胺基之單體為必需單體之共聚物之重量平均分子量,較佳為各1,000以上且1,000,000以下,尤佳為3,000以上且800,000以下,更佳為5,000以上且600,000以下。此外,水溶性高分子化合物之重量平均分子係藉由凝膠滲透層析術(GPC)經聚丙烯酸換算進行測定。若水溶性高分子化合物之重量平均分子量未滿1,000,將使研磨後之凹陷程度惡化;而重量平均分子量超過10,000,000,將使水溶液黏度增強而變得難以處理。 The water-soluble polymer compound used in the present invention contains a monomer having a carboxylic acid group as an essential monomer. Polymers of monomers, polymers containing monomers with sulfonic acid groups as essential monomers, and copolymers containing monomers with carboxylic acid groups and monomers with sulfonic acid groups as essential monomers, containing carboxylic acid The weight average molecular weight of the copolymer in which the monomer with a sulfonic acid group and the monomer with an amide group are essential monomers is preferably 1,000 or more and 1,000,000 or less, particularly preferably 3,000 or more and 800,000 or less. , preferably more than 5,000 and less than 600,000. In addition, the weight average molecule of the water-soluble polymer compound is measured by gel permeation chromatography (GPC) in terms of polyacrylic acid. If the weight average molecular weight of the water-soluble polymer compound is less than 1,000, the degree of denting after grinding will worsen; if the weight average molecular weight exceeds 10,000,000, the viscosity of the aqueous solution will increase, making it difficult to handle.

(2-8)濃度 (2-8)Concentration

研磨劑組合物中之水溶性高分子化合物之濃度,以固體含量換算時,為0.0001質量%以上且3.0質量%以下,較佳為0.001質量%以上且2.0質量%以下,更佳為0.005質量%以上且1.0質量%以下。若水溶性高分子化合物之濃度小於0.0001質量%,無法充分獲得添加水溶性高分子化合物之效果,而濃度大於3.0質量%,則水溶性高分子化合物之添加效果將達上限,故添加必需量以上之水溶性高分子化合物,無經濟之效。 The concentration of the water-soluble polymer compound in the abrasive composition, when converted in terms of solid content, is 0.0001 mass % or more and 3.0 mass % or less, preferably 0.001 mass % or more and 2.0 mass % or less, more preferably 0.005 mass % More than and 1.0 mass% or less. If the concentration of the water-soluble polymer compound is less than 0.0001% by mass, the effect of adding the water-soluble polymer compound cannot be fully obtained. If the concentration is greater than 3.0% by mass, the effect of adding the water-soluble polymer compound will reach the upper limit, so add more than the necessary amount. Water-soluble polymer compound, no economical effect.

(3)有機硫酸酯鹽化合物 (3) Organic sulfate ester salt compounds

在本發明之研磨劑組合物中,包含有機硫酸酯鹽化合物作為必需成分。作為有機硫酸酯鹽化合物,可包含以下第一種型態與第二種型態之任一種。 The abrasive composition of the present invention contains an organic sulfate ester salt compound as an essential component. The organic sulfate ester salt compound may include any of the following first and second forms.

(3-1)有機硫酸酯鹽化合物(第一種型態) (3-1) Organic sulfate ester salt compound (first type)

用於本發明之研磨劑組合物之有機硫酸酯鹽化合物之第一種型態,係以如下通式(1)所示之化合物。 The first form of the organic sulfate ester salt compound used in the abrasive composition of the present invention is a compound represented by the following general formula (1).

R-O-SO3M (1)於式中,R表示碳數為5~21之直鏈或分支之烷基、烯基、烯丙基或烯丙烷基,M表示鹼金屬、鹼土族金屬、銨離子或有機陽離子。 RO-SO 3 M (1) In the formula, R represents a linear or branched alkyl, alkenyl, allyl or allyl group with a carbon number of 5 to 21, and M represents an alkali metal, alkaline earth metal, ammonium ionic or organic cations.

上述通式(1)中,若R之碳數未滿5,對研磨而產生之研磨屑之分散去除能力與再附著防止能力有時會不足,若R之碳數超過21,有機硫酸酯鹽化合物本身在研磨劑組合物中之溶解性、分散穩定性就會下降,在研磨劑組合物使用過程中,溶解性、分散穩定性有時會下降。R之碳數較佳為8~14,更佳為10~14。 In the above general formula (1), if the number of carbon atoms in R is less than 5, the dispersion and removal ability of grinding dust generated by grinding and the ability to prevent re-adhesion may be insufficient. If the number of carbon atoms in R exceeds 21, the organic sulfate ester salt The solubility and dispersion stability of the compound itself in the abrasive composition will decrease. During the use of the abrasive composition, the solubility and dispersion stability may sometimes decrease. The carbon number of R is preferably 8 to 14, more preferably 10 to 14.

R所示之烷基之具體範例包含戊基、己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、十四烷基、十五烷基、十六烷基、十八烷基、十九烷基、叔丁基、異辛基、異十二烷基等。此外,作為烯基之實例,可列舉油醯基等。此外,作為烯丙基之實例,可列舉苯基、聯苯基、萘基等。此外,作為烯丙烷基之實例,可列舉甲苯基、二甲苯基、辛苯酚基等。從氧化穩定性、分解穩定性等觀點而言,R較佳為烷基。 Specific examples of the alkyl group represented by R include pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, and pentadecyl Base, hexadecyl, octadecyl, nonadecyl, tert-butyl, isooctyl, isododecanyl, etc. Examples of the alkenyl group include an oleyl group and the like. Furthermore, examples of allyl groups include phenyl group, biphenyl group, naphthyl group, and the like. Furthermore, examples of the allyl group include tolyl group, xylyl group, octylphenol group, and the like. From the viewpoint of oxidation stability, decomposition stability, etc., R is preferably an alkyl group.

上述通式(1)中,M之實例包含鈉或鉀等鹼金屬、鈣或鎂等鹼土金屬、銨離子、四級銨離子或三乙醇胺等有機胺。 In the above general formula (1), examples of M include alkali metals such as sodium or potassium, alkaline earth metals such as calcium or magnesium, ammonium ions, quaternary ammonium ions, or organic amines such as triethanolamine.

上述通式(1)所示之有機硫酸酯鹽化合物之具體範例包含庚硫酸鹽、辛硫酸鹽、月桂硫酸鹽、高級醇(椰子油)硫酸鹽、硬脂硫酸鹽等,其中較佳為使用辛硫酸鹽、月桂硫酸鹽、硬脂硫酸鹽。上述通式(1)所示之有機硫酸酯鹽化合物,於本發明之研磨劑組合物中,可單獨使用一種,或組合兩種以上使用。 Specific examples of the organic sulfate ester salt compound represented by the above general formula (1) include heptyl sulfate, octyl sulfate, lauryl sulfate, higher alcohol (coconut oil) sulfate, stearyl sulfate, etc., among which it is preferred to use Octyl sulfate, lauryl sulfate, stearyl sulfate. In the abrasive composition of the present invention, one type of organic sulfate ester salt compound represented by the above-mentioned general formula (1) can be used alone, or two or more types can be used in combination.

研磨劑組合物中之上述通式(1)所示之有機硫酸酯鹽化合 物含量,通常為0.0001~2.0質量%,較佳為0.0005~1.0質量%。 Organic sulfate ester salt compound represented by the above general formula (1) in the abrasive composition The content is usually 0.0001~2.0% by mass, preferably 0.0005~1.0% by mass.

(3-2)有機硫酸酯鹽化合物(第二種型態) (3-2) Organic sulfate ester salt compound (second type)

用於本發明之研磨劑組合物之有機硫酸酯鹽化合物之第二種型態,係以如下通式(2)所示之化合物。 The second form of the organic sulfate ester salt compound used in the polishing composition of the present invention is a compound represented by the following general formula (2).

R-O-(AO)n-SO3M (2)於式中,R表示碳數為5~21之直鏈或分支之烷基、烯基、烯丙基或烯丙烷基,AO表示碳數為2或3之氧伸烷基,n表示1~30之自然數,M表示鹼金屬、鹼土族金屬、銨離子或有機陽離子。 RO-(AO)n-SO 3 M (2) In the formula, R represents a linear or branched alkyl, alkenyl, allyl or allyl group with a carbon number of 5 to 21, and AO represents a carbon number of Oxyalkylene group of 2 or 3, n represents a natural number from 1 to 30, M represents alkali metal, alkaline earth metal, ammonium ion or organic cation.

上述通式(2)所示之有機硫酸酯鹽化合物中,R係碳數為5~21之直鏈或分支之烷基、烯基、烯丙基或烯丙烷基。R之碳數較佳為8~14,更佳為10~14。此外,R較佳為烷基。 In the organic sulfate ester salt compound represented by the above general formula (2), R is a linear or branched alkyl group, alkenyl group, allyl group or allyl group having 5 to 21 carbon atoms. The carbon number of R is preferably 8 to 14, more preferably 10 to 14. In addition, R is preferably an alkyl group.

上述通式(2)中,AO係碳數為2或3之氧伸烷基。 In the above general formula (2), AO is an oxyalkylene group having 2 or 3 carbon atoms.

上述通式(2)中,n為1~30之自然數,較佳為2~4。 In the above general formula (2), n is a natural number from 1 to 30, preferably 2 to 4.

上述通式(2)中,M之實例包含鈉或鉀等鹼金屬、鈣或鎂等鹼土金屬、銨離子、四級銨離子或三乙醇胺等有機胺。 In the above general formula (2), examples of M include alkali metals such as sodium or potassium, alkaline earth metals such as calcium or magnesium, ammonium ions, quaternary ammonium ions, or organic amines such as triethanolamine.

作為上述通式(2)所示之有機硫酸酯鹽化合物,係使用眾所皆知之水溶性化合物作為陰離子界面活性劑。本發明中,上述通式(2)所示之有機硫酸酯鹽化合物係指,聚氧伸烷基醚硫酸酯鹽、聚氧伸烷基烯醚硫酸酯鹽、聚氧伸烷基芳基醚硫酸酯鹽及聚氧伸烷基烷芳基醚硫酸酯鹽之任一種。 As the organic sulfate ester salt compound represented by the general formula (2), a well-known water-soluble compound is used as an anionic surfactant. In the present invention, the organic sulfate ester compound represented by the above general formula (2) refers to polyoxyalkylene ether sulfate ester salt, polyoxyalkylene alkenyl ether sulfate ester salt, polyoxyalkylene aryl ether Any of sulfate ester salts and polyoxyalkylene alkylaryl ether sulfate ester salts.

更具體而言,作為上述通式(2)所示之有機硫酸酯鹽化合物,可列舉聚氧乙烯十三醚硫酸鹽(每分子2個或3個聚氧乙烯基)、聚 氧乙烯月桂醚硫酸鹽(每分子2個或3個聚氧乙烯基)、聚氧乙烯壬醚硫酸鹽(每分子3個聚氧乙烯基)、聚氧乙烯辛苯酚醚硫酸鹽(每分子3個聚氧乙烯基)、聚氧乙烯壬苯醚硫酸鹽(每分子3個聚氧乙烯基)等。其中,特佳為使用聚氧乙烯十三醚硫酸鹽(每分子3個聚氧乙烯基)、聚氧乙烯月桂醚硫酸鹽(每分子3個聚氧乙烯基)、聚氧乙烯辛苯酚醚硫酸鹽(每分子3個聚氧乙烯基)、聚氧乙烯壬苯醚硫酸鹽(每分子3個聚氧乙烯基)。 More specifically, examples of the organic sulfate ester salt compound represented by the general formula (2) include polyoxyethylene tridecyl ether sulfate (2 or 3 polyoxyethylene groups per molecule), polyoxyethylene tridecyl ether sulfate, Oxyethylene lauryl ether sulfate (2 or 3 polyoxyethylene groups per molecule), polyoxyethylene nonyl ether sulfate (3 polyoxyethylene groups per molecule), polyoxyethylene octylphenol ether sulfate (3 polyoxyethylene groups per molecule) polyoxyethylene groups), polyoxyethylene nonylphenyl ether sulfate (3 polyoxyethylene groups per molecule), etc. Among them, polyoxyethylene tridecyl ether sulfate (3 polyoxyethylene groups per molecule), polyoxyethylene lauryl ether sulfate (3 polyoxyethylene groups per molecule), and polyoxyethylene octylphenol ether sulfate are particularly preferred. Salt (3 polyoxyethylene groups per molecule), polyoxyethylene nonylphenyl ether sulfate (3 polyoxyethylene groups per molecule).

上述通式(2)所示之有機硫酸酯鹽化合物,於本發明之研磨劑組合物中,可單獨含有一種,或組合含有兩種以上。此外,亦可與上述通式(1)所示之有機硫酸酯鹽化合物組合使用。 The abrasive composition of the present invention may contain one type of organic sulfate ester salt compound represented by the above-mentioned general formula (2) alone, or a combination of two or more types thereof. In addition, it can also be used in combination with the organic sulfate ester salt compound represented by the above-mentioned general formula (1).

研磨劑組合物中之上述通式(2)所示之有機硫酸酯鹽化合物之含量,通常為0.0001~2.0質量%,較佳為0.0005~1.0質量%。 The content of the organic sulfate ester salt compound represented by the above general formula (2) in the abrasive composition is usually 0.0001 to 2.0 mass%, preferably 0.0005 to 1.0 mass%.

(4)酸及/或其鹽類 (4)Acid and/or its salts

在本發明中,可使用酸及/或其鹽類以調整pH值或做為一選擇性成分。所使用之酸及/或其鹽類的實例包含無機酸及/或其鹽類與有機酸及/或其鹽類。 In the present invention, acids and/or salts thereof may be used to adjust the pH value or as an optional ingredient. Examples of acids and/or salts thereof used include inorganic acids and/or salts thereof and organic acids and/or salts thereof.

無機酸及/或其鹽類的實例包含硝酸、硫酸、鹽酸、磷酸、膦酸、焦磷酸、三聚磷酸等無機酸及/或其鹽類。 Examples of inorganic acids and/or salts thereof include inorganic acids such as nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, phosphonic acid, pyrophosphoric acid, and tripolyphosphoric acid, and/or salts thereof.

有機酸及/或其鹽類的實例包含穀胺酸或天冬胺酸等胺基羧酸及/或其鹽類,以及檸檬酸、酒石酸、草酸、硝基醋酸、順丁烯二酸、蘋果酸、琥珀酸等羧酸及/或其鹽類,有機膦酸及/或其鹽類。此等酸及/或其鹽類可單獨使用一種,或組合兩種以上使用。 Examples of organic acids and/or salts thereof include aminocarboxylic acids such as glutamic acid or aspartic acid and/or salts thereof, as well as citric acid, tartaric acid, oxalic acid, nitroacetic acid, maleic acid, and malic acid. acid, succinic acid and other carboxylic acids and/or their salts, organic phosphonic acids and/or their salts. These acids and/or their salts can be used individually by 1 type, or in combination of 2 or more types.

有機膦酸及/或其鹽類係為選自以下至少一種以上之化合物:2-胺基乙基膦酸、1-羥基亞乙基-1,1-二膦酸、胺基三(亞甲基膦酸)、乙二胺四(亞甲基膦酸)、二伸乙三胺五(亞甲基膦酸)、乙烷-1,1-二膦酸、乙烷-1,1,2-三膦酸、乙烷-1-羥基-1,1,2-三膦酸、乙烷-1,2-二羧基-1,2-二膦酸、甲烷羥基膦酸、2-膦醯丁烷-1,2-二羧酸、1-膦醯丁烷-2,3,4-三羧酸、α-甲基膦醯琥珀酸以及其鹽類。 Organic phosphonic acid and/or its salts are at least one compound selected from the following: 2-aminoethylphosphonic acid, 1-hydroxyethylene-1,1-diphosphonic acid, aminotris(methylene methylphosphonic acid), ethylenediaminetetrakis(methylenephosphonic acid), diethylenetriaminepenta(methylenephosphonic acid), ethane-1,1-diphosphonic acid, ethane-1,1,2 -Triphosphonic acid, ethane-1-hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methanehydroxyphosphonic acid, 2-phosphonidine Alkane-1,2-dicarboxylic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid, α-methylphosphonosuccinic acid and their salts.

上述化合物以組合兩種以上使用,亦可為較佳之實施形態,具體實例包含硫酸及/或其鹽類與有機膦酸及/或其鹽類之組合、磷酸及/或其鹽類與有機膦酸及/或其鹽類之組合等。 It is also a preferred embodiment to use two or more of the above compounds in combination. Specific examples include a combination of sulfuric acid and/or its salts and organic phosphonic acid and/or its salts, phosphoric acid and/or its salts and an organic phosphine. Combinations of acids and/or their salts, etc.

(5)氧化劑 (5) Oxidizing agent

本發明中,可使用氧化劑做為研磨促進劑。所使用的氧化劑實例包含過氧化物、過錳酸或其鹽類、鉻酸或其鹽類、過氧酸或其鹽類、鹵氧酸或其鹽類、含氧酸或其鹽類,以及兩種以上此等氧化劑之混合物等。 In the present invention, an oxidizing agent can be used as a grinding accelerator. Examples of oxidants used include peroxides, permanganic acid or its salts, chromic acid or its salts, peroxyacids or its salts, halogen acids or their salts, oxyacids or their salts, and Mixtures of two or more such oxidants, etc.

具體實例包含過氧化氫、過氧化鈉、過氧化鋇、過氧化鉀、過錳酸鉀、鉻酸之金屬鹽、二鉻酸之金屬鹽、過硫酸、過硫酸鈉、過硫酸鉀、過硫酸銨、過氧磷酸、過氧硼酸鈉、過蟻酸、過醋酸、次亞氯酸、次亞氯酸鈉、次亞氯酸鈣等。其中較佳為過氧化氫、過硫酸及其鹽類、次亞氯酸及其鹽類等,更佳為過氧化氫。 Specific examples include hydrogen peroxide, sodium peroxide, barium peroxide, potassium peroxide, potassium permanganate, metal salts of chromic acid, metal salts of dichromic acid, persulfuric acid, sodium persulfate, potassium persulfate, persulfate Ammonium, peroxyphosphoric acid, sodium perborate, performic acid, peracetic acid, hypochlorous acid, sodium hypochlorite, calcium hypochlorite, etc. Among them, hydrogen peroxide, persulfuric acid and its salts, hypochlorous acid and its salts, etc. are preferred, and hydrogen peroxide is more preferred.

研磨劑組合物中之氧化劑含量較佳為0.01~10.0質量%。尤佳為0.1~5.0質量%。 The oxidizing agent content in the abrasive composition is preferably 0.01 to 10.0 mass%. Especially preferably, it is 0.1~5.0% by mass.

2.研磨劑組合物之物理特性(pH) 2. Physical properties (pH) of the abrasive composition

本發明之研磨劑組合物,其pH值(25℃)範圍較佳為0.1~4.0,尤佳為 0.5~3.0。藉由使研磨劑組合物之pH值(25℃)為0.1以上,可抑制表面粗糙度。藉由使研磨劑組合物之pH值(25℃)為4.0以下,可抑制研磨速度之低落。 The pH value (25°C) of the abrasive composition of the present invention is preferably in the range of 0.1 to 4.0, especially 0.5~3.0. By setting the pH value (25° C.) of the abrasive composition to 0.1 or more, surface roughness can be suppressed. By setting the pH value (25° C.) of the polishing composition to 4.0 or less, a decrease in the polishing speed can be suppressed.

本發明之研磨劑組合物,可用於硬碟等所謂磁記錄媒體等各種電子組件之研磨。特別是,可適用於鋁製磁碟基板之研磨。更可適用於無電解鎳-磷電鍍之鋁製磁碟基板之研磨。無電解鎳-磷電鍍,一般於pH值(25℃)4.0~6.0之條件下實施電鍍。如為pH值(25℃)未滿4.0之電鍍條件,鎳傾向於溶解,電鍍將難以進行。另一方面,於研磨時,例如於pH值(25℃)未滿4.0之條件下,鎳傾向於溶解,唯可藉由使用本發明之研磨劑組合物,提高研磨速度。 The abrasive composition of the present invention can be used for polishing various electronic components such as hard disks and other so-called magnetic recording media. In particular, it is suitable for grinding aluminum disk substrates. It is also suitable for grinding electroless nickel-phosphorus electroplated aluminum disk substrates. Electroless nickel-phosphorus plating is generally carried out under the conditions of pH value (25℃) 4.0~6.0. If the pH value (25°C) is less than 4.0 for electroplating, nickel tends to dissolve and electroplating will be difficult to proceed. On the other hand, during grinding, for example, under conditions where the pH value (25° C.) is less than 4.0, nickel tends to dissolve. The grinding speed can only be increased by using the abrasive composition of the present invention.

3.磁碟基板之研磨方法 3. Polishing method of disk substrate

本發明之研磨劑組合物適合用於鋁製磁碟基板與玻璃磁碟基板等磁碟基板之研磨。特別是適合用於無電解鎳-磷電鍍之鋁製磁碟基板(以下稱之為「鋁碟」)之研磨。 The abrasive composition of the present invention is suitable for polishing magnetic disk substrates such as aluminum magnetic disk substrates and glass magnetic disk substrates. It is particularly suitable for grinding electroless nickel-phosphorus electroplated aluminum disk substrates (hereinafter referred to as "aluminum disks").

作為本發明之研磨劑組合物可適用之研磨方法,例如,有將研磨墊貼附於研磨機之平板,同時於研磨對象(例如鋁碟)之研磨表面或研磨墊塗佈研磨劑組合物,以研磨墊摩擦研磨表面之方法(稱之為拋光)。例如,同時研磨鋁碟之正面與反面時,有使用雙面研磨機,以上平板及下平板各別貼附之研磨墊進行研磨之方法。該方法中,係將鋁碟夾入貼附於上平板及下平板之研磨墊之間,並於研磨面與研磨墊之間塗佈研磨劑組合物,藉由兩個研磨墊同時旋轉之方式,研磨鋁碟之正面與反面。研磨墊可使用聚氨酯研磨墊、麂皮絨研磨墊、不織布研磨墊以及其他任意材質之研 磨墊。 As a polishing method applicable to the abrasive composition of the present invention, for example, a polishing pad is attached to the flat plate of a grinding machine, and the abrasive composition is applied to the polishing surface of the polishing object (such as an aluminum disc) or the polishing pad at the same time. The method of rubbing the surface with a polishing pad (called polishing). For example, when grinding the front and back sides of an aluminum disc at the same time, there is a method of using a double-sided grinder and grinding pads attached to the upper and lower plates respectively. In this method, an aluminum disc is sandwiched between polishing pads attached to the upper and lower flat plates, and an abrasive composition is applied between the polishing surface and the polishing pads by rotating the two polishing pads simultaneously. , grinding the front and back of the aluminum disc. Polishing pads can use polyurethane polishing pads, suede polishing pads, non-woven polishing pads and any other material. Sanding pad.

[實施例] [Example]

以下依據實施例對本發明進行具體說明,唯本發明並不限於該等實施例,在不脫離本發明之技術範圍內,皆可依照各種型態實施。 The present invention will be specifically described below based on the embodiments. However, the present invention is not limited to these embodiments and can be implemented in various forms without departing from the technical scope of the present invention.

研磨劑組合物之製備方法 Preparation method of abrasive composition

於實施例1至15及比較例1至9所使用之研磨劑組合物,係以表1所述之含量包含表1所述材料之研磨劑組合物。此外,各實施例與各比較例之研磨試驗結果如表2及表3所示。另,聚氧乙烯十三醚硫酸鈉,係第二種型態之有機硫酸酯鹽化合物;月桂硫酸鈉,係第一種型態之有機硫酸酯鹽化合物。此外,合成編號1~5,係以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物之水溶性高分子化合物。合成編號6、7,係同元聚合物。此外,實施例11、12中,水溶性高分子量化合物係含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物。合成編號8,係以具羧酸基之單體與具磺酸基之單體及具醯胺基之單體為必需單體之共聚物之水溶性高分子化合物。 The abrasive compositions used in Examples 1 to 15 and Comparative Examples 1 to 9 are abrasive compositions containing the materials described in Table 1 in the contents described in Table 1. In addition, the grinding test results of each Example and each Comparative Example are shown in Table 2 and Table 3. In addition, sodium polyoxyethylene tridecyl sulfate is the second type of organic sulfate ester salt compound; sodium lauryl sulfate is the first type of organic sulfate ester salt compound. In addition, synthesis numbers 1 to 5 are water-soluble polymer compounds of copolymers using monomers with carboxylic acid groups and monomers with sulfonic acid groups as essential monomers. Synthesis numbers 6 and 7 are homopolymers. Furthermore, in Examples 11 and 12, the water-soluble high molecular weight compound is a mixture containing a polymer containing a monomer having a carboxylic acid group as an essential monomer and a polymer containing a monomer having a sulfonic acid group as an essential monomer. Synthesis No. 8 is a water-soluble polymer compound that is a copolymer of a monomer with a carboxylic acid group, a monomer with a sulfonic acid group, and a monomer with an amide group as essential monomers.

Figure 108127247-A0202-12-0019-1
Figure 108127247-A0202-12-0019-1
Figure 108127247-A0202-12-0020-8
Figure 108127247-A0202-12-0020-8

AA:丙烯酸 AA: acrylic

ATBS:2-丙烯醯胺-2-甲基丙磺酸 ATBS: 2-Acrylamide-2-methylpropanesulfonic acid

TBAA:叔丁基丙烯醯胺 TBAA: tert-butylacrylamide

平均粒徑 average particle size

氧化鋁粒子之平均粒徑,係使用雷射繞射式粒度分佈測定裝置(Shimadzu Corporation製造,SALD2200)進行測定。氧化鋁粒子之平均粒徑係以體積為基準時,自小粒徑開始之累積粒徑分佈為50%時所對應之平均粒徑(D50)。 The average particle diameter of the alumina particles was measured using a laser diffraction particle size distribution analyzer (SALD2200, manufactured by Shimadzu Corporation). The average particle size of alumina particles is the average particle size (D50) corresponding to when the cumulative particle size distribution starting from the small particle size is 50% based on volume.

重量平均分子量 weight average molecular weight

水溶性高分子化合物之重量平均分子量,係藉由凝膠滲透層析術(GPC)經聚丙烯酸換算進行測定,GPC測定條件如下所示。 The weight average molecular weight of a water-soluble polymer compound is measured by gel permeation chromatography (GPC) in terms of polyacrylic acid. The GPC measurement conditions are as follows.

GPC條件 GPC conditions

管柱:G4000PWXL(東曹株式會社製)+G2500PWXL(東曹株式會社製) Column: G4000PWXL (manufactured by Tosoh Corporation) + G2500PWXL (manufactured by Tosoh Corporation)

溶析液:0.2M磷酸鹽緩衝劑/乙腈=9/1(容量比) Eluate: 0.2M phosphate buffer/acetonitrile=9/1 (volume ratio)

流速:1.0mL/min Flow rate: 1.0mL/min

溫度:40℃ Temperature: 40℃

偵測:210nm(UV) Detection: 210nm(UV)

樣本:濃度5mg/mL(注入量100μL) Sample: concentration 5mg/mL (injection volume 100μL)

標準曲線用聚合物:聚丙烯酸 分子量(波峰分子量:Mp)11.5萬、2.8萬、4100、1250(創和科學(株)、American Polymer Standards Corp.) Polymer for standard curve: polyacrylic acid, molecular weight (peak molecular weight: Mp) 115,000, 28,000, 4100, 1250 (Chuangwa Science Co., Ltd., American Polymer Standards Corp.)

研磨條件 Grinding conditions

以無電解鎳-磷電鍍之外徑為95mm之鋁碟作為研磨對象之基板,並以下列研磨條件實施研磨。 An electroless nickel-phosphorus electroplated aluminum disc with an outer diameter of 95 mm was used as the substrate to be polished, and polishing was carried out under the following polishing conditions.

研磨機:SpeedFam Company Ltd.製造之9B雙面研磨機 Grinding machine: 9B double-sided grinding machine manufactured by SpeedFam Company Ltd.

研磨墊:FILWEL CO.,LTD.製造之P1墊 Polishing pad: P1 pad manufactured by FILWEL CO., LTD.

平板旋轉數:上平板 -7.5min-1 Number of plate rotations: Upper plate -7.5min- 1

下平板 22.5min-1 Lower the plate 22.5min- 1

研磨劑組合物供給量:100ml/min Abrasive composition supply volume: 100ml/min

研磨時間:4.5分鐘 Grinding time: 4.5 minutes

加工壓力:100g/cm2 Processing pressure: 100g/cm 2

以上述研磨條件實施研磨試驗之結果,如表2、表3所示。 The results of the polishing test under the above polishing conditions are shown in Table 2 and Table 3.

研磨速度比 grinding speed ratio

研磨速度,係測定研磨後減少之鋁碟質量,再依據下列數式所算出之值。 The grinding speed is measured by measuring the mass of the aluminum disc reduced after grinding, and then calculating the value based on the following formula.

研磨速度(μm/min)=鋁碟質量減少量(g)/研磨時間(min)/鋁碟單面面積(cm2)/無電解鎳-磷電鍍皮膜密度(g/cm3)/2×104 Grinding speed (μm/min) = mass reduction of aluminum disc (g)/grinding time (min)/single surface area of aluminum disc (cm 2 )/electrolytic nickel-phosphorus plating film density (g/cm 3 )/2× 10 4

(然而,上述式中,鋁碟單面面積為65.9cm2,無電解鎳-磷電鍍皮膜密度為8.0g/cm3) (However, in the above formula, the single-sided area of the aluminum disk is 65.9cm 2 and the density of the electroless nickel-phosphorus plating film is 8.0g/cm 3 )

研磨速度比係以上述數式求得之比較例1之研磨速度為1(基準)時之相對值,比較例1之實測值為0.354μm/min。 The polishing speed ratio is a relative value when the polishing speed of Comparative Example 1 is 1 (standard) calculated by the above mathematical formula. The actual measured value of Comparative Example 1 is 0.354 μm/min.

凹陷 depression

鋁碟之凹陷係使用Ametek Co.,Ltd製造之掃描式白光涉三次元表面結構分析顯微鏡進行測定。測定條件係使用Ametek Co.,Ltd製造之測定裝置(New View 8300(鏡頭:1.4倍、放大倍率:1.0倍),波長為500~1000μm,測定範圍為6mm×6mm,並使用Ametek Co.,Ltd製造之分析軟體(Mx)進 行分析。另,表2、表3所示數值,係以比較例1之凹陷程度為1(基準)時之相對值。比較例1之實測值為1.9Å。 The dents of the aluminum disc were measured using a scanning white light three-dimensional surface structure analysis microscope manufactured by Ametek Co., Ltd. The measurement conditions are a measurement device (New View 8300 (lens: 1.4x, magnification: 1.0x) manufactured by Ametek Co., Ltd., a wavelength of 500~1000 μm, a measurement range of 6mm×6mm, and Ametek Co., Ltd. Manufacturing analysis software (Mx) Perform analysis. In addition, the numerical values shown in Table 2 and Table 3 are relative values when the degree of dent in Comparative Example 1 is 1 (standard). The actual measured value in Comparative Example 1 was 1.9Å.

滾降比 roll-off ratio

作為端面形狀之評價,測定以數值化呈現滾降程度之外圍下垂程度。滾降係使用Ametek Co.,Ltd製造之測定裝置New View 8300(鏡頭:1.4倍、放大倍率:1.0倍)與Ametek Co.,Ltd製造之分析軟體(Mx)進行測定。 As an evaluation of the end surface shape, the degree of peripheral sag, which represents the degree of roll-off numerically, is measured. The roll-off was measured using the measurement device New View 8300 (lens: 1.4x, magnification: 1.0x) manufactured by Ametek Co., Ltd. and the analysis software (Mx) manufactured by Ametek Co., Ltd.

關於滾降之測定方法,以圖1說明。圖1係表示研磨目標物即外徑95mm之無電解鎳-磷電鍍鋁碟,其通過碟片中心至研磨表面為止之垂直斷面圖。於測定滾降時,首先沿碟片外周端設置垂線H,自垂線H向研磨表面上之碟片中心方向設置平行於垂線H且與垂線H之距離為3.90mm之線j,並以碟片之斷面線與線j交會處為點A。另外,於平行於垂線H且與垂線H之距離為0.30mm處設置線k,並以碟片之斷面線與線k交會處為點B。設置連接點A與點B之線m,再設置垂直於線m之線t,並以碟片之斷面線與線t交會處為點C、線m與線t交會處為點D。接著,測定點C-D間之最大距離,並以此距離作為滾降。 The measurement method of roll-off is explained with reference to Figure 1. Figure 1 is a vertical cross-sectional view of an electroless nickel-phosphorus electroplated aluminum disc with an outer diameter of 95 mm, which is the target object for grinding, and passes through the center of the disc to the grinding surface. When measuring the roll-off, first set a vertical line H along the outer peripheral end of the disc, set a line j parallel to the vertical line H and 3.90mm away from the vertical line H from the vertical line H toward the center of the disc on the grinding surface, and take the disc The intersection of the section line and line j is point A. In addition, set a line k parallel to the vertical line H and at a distance of 0.30 mm from the vertical line H, and take the intersection of the disc's section line and the line k as point B. Set a line m connecting point A and point B, and then set a line t perpendicular to line m. The intersection of the disc's cross-section line and line t is point C, and the intersection of line m and line t is point D. Next, measure the maximum distance between points C-D and use this distance as the roll-off.

滾降比係以上述方法測定之比較例1之滾降比為1(基準)時之相對值。比較例1之實測值為913Å。 The roll-off ratio is a relative value when the roll-off ratio of Comparative Example 1 measured by the above method is 1 (standard). The measured value of Comparative Example 1 is 913Å.

Figure 108127247-A0202-12-0024-4
Figure 108127247-A0202-12-0024-4
Figure 108127247-A0202-12-0025-9
Figure 108127247-A0202-12-0025-9

AA:丙烯酸 AA: acrylic

ATBS:2-丙烯醯胺-2-甲基丙磺酸 ATBS: 2-Acrylamide-2-methylpropanesulfonic acid

TBAA:叔丁基丙烯醯胺 TBAA: tert-butylacrylamide

330T:聚氧乙烯十三烷基醚硫酸鈉 330T: polyoxyethylene sodium tridecyl ether sulfate

LS-30:月桂硫酸鈉 LS-30: Sodium Laurel Sulfate

於所有實施例與比較例,添加過氧化氫:0.6質量%、硫酸:1.1質量%(使pH=1.2之添加量) In all Examples and Comparative Examples, hydrogen peroxide: 0.6 mass% and sulfuric acid: 1.1 mass% (the amount added to make pH=1.2) were added.

Figure 108127247-A0202-12-0026-6
Figure 108127247-A0202-12-0026-6

AA:丙烯酸 AA: acrylic

ATBS:2-丙烯醯胺-2-甲基丙磺酸 ATBS: 2-Acrylamide-2-methylpropanesulfonic acid

TBAA:叔丁基丙烯醯胺 TBAA: tert-butylacrylamide

330T:聚氧乙烯十三烷基醚硫酸鈉 330T: polyoxyethylene sodium tridecyl ether sulfate

LS-30:月桂硫酸鈉 LS-30: Sodium Laurel Sulfate

於所有實施例與比較例,添加過氧化氫:0.6質量%、硫酸:1.1質量%(使pH=1.2之添加量) In all Examples and Comparative Examples, hydrogen peroxide: 0.6 mass% and sulfuric acid: 1.1 mass% (the amount added to make pH=1.2) were added.

結論 Conclusion

實施例1係相對於比較例1,添加了有機硫酸酯鹽化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。此外,實施例1係相對於比較例2,添加了水溶性高分子化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。接著,實施例1係相對於比較例3,使用共聚物代替同元聚合物作為水溶性高分子化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。實施例2,係改變實施例1之水溶性高分子化合物之分子量之實驗。 Compared to Comparative Example 1, Example 1 was an experiment in which an organic sulfate ester salt compound was added, in which the grinding speed, dents, roll-off, etc. were all improved. In addition, compared to Comparative Example 2, Example 1 was an experiment in which a water-soluble polymer compound was added, and the polishing speed, denting, roll-off, etc. were all improved. Next, compared to Comparative Example 3, Example 1 is an experiment in which a copolymer is used instead of a homopolymer as the water-soluble polymer compound, and the grinding speed, denting, roll-off, etc. are all improved. Example 2 is an experiment in which the molecular weight of the water-soluble polymer compound in Example 1 was changed.

實施例3係相對於比較例1,添加有機硫酸酯鹽化合物之實驗,其中研磨速度相等,但凹陷與滾降皆有改善。此外,實施例3係相對於比較例4,添加水溶性高分子化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。接著,實施例3係相對於比較例5,使用共聚物代替同元聚合物作為水溶性高分子化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。實施例4,係改變實施例3之水溶性高分子化合物之分子量之實驗。 Example 3 is an experiment in which an organic sulfate ester compound is added compared to Comparative Example 1. The grinding speed is the same, but the dent and roll-off are improved. In addition, compared to Comparative Example 4, Example 3 is an experiment in which a water-soluble polymer compound is added, in which the grinding speed, denting, roll-off, etc. are all improved. Next, Example 3 is an experiment in which a copolymer is used instead of a homopolymer as the water-soluble polymer compound compared to Comparative Example 5, in which the grinding speed, denting, roll-off, etc. are all improved. Example 4 is an experiment in which the molecular weight of the water-soluble polymer compound in Example 3 was changed.

實施例5係相對於比較例6,添加有機硫酸酯鹽化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。實施例6,係改變實施例5之水溶性高分子化合物之分子量之實驗。 Compared with Comparative Example 6, Example 5 is an experiment in which an organic sulfate ester salt compound is added, in which the grinding speed, dents, roll-off, etc. are all improved. Example 6 is an experiment to change the molecular weight of the water-soluble polymer compound in Example 5.

實施例7係相對於比較例6,添加有機硫酸酯鹽化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。實施例8,係改變實施例7之水溶性高分子化合物之分子量之實驗。 Compared to Comparative Example 6, Example 7 is an experiment in which an organic sulfate ester salt compound was added, in which the grinding speed, dents, roll-off, etc. were all improved. Example 8 is an experiment to change the molecular weight of the water-soluble polymer compound of Example 7.

實施例9係相對於比較例7,使用共聚物代替同元聚合物作為水溶性高分子化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。實施例10係相對於比較例8,使用共聚物代替同元聚合物作為水溶性高分 子化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。 Compared to Comparative Example 7, Example 9 is an experiment in which a copolymer was used instead of a homopolymer as the water-soluble polymer compound, and the grinding speed, denting, roll-off, etc. were all improved. Compared to Comparative Example 8, Example 10 uses a copolymer instead of a homopolymer as the water-soluble polymer. In experiments with sub-compounds, the grinding speed, dent and roll-off were all improved.

相對於比較例3僅使用AA(丙烯酸)同元聚合物作為水溶性高分子化合物之實驗,實施例11係使用AA同元聚合物與ATBS(2-丙烯醯胺-2-甲基丙磺酸)同元聚合物之混合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。此外,比較例7係僅使用ATBS同元聚合物之實驗,與此相對,實施例11之研磨速度、凹陷及滾降等皆有改善。 Compared to Comparative Example 3, which only uses AA (acrylic acid) homopolymer as the water-soluble polymer compound, Example 11 uses AA homopolymer and ATBS (2-acrylamide-2-methylpropanesulfonic acid). ) Experiments on homopolymer mixtures, in which the grinding speed, dent and roll-off were all improved. In addition, Comparative Example 7 is an experiment using only ATBS homopolymer. In contrast, Example 11 has improvements in grinding speed, denting, roll-off, etc.

相對於比較例5僅使用AA同元聚合物之實驗,實施例12係使用AA同元聚合物與ATBS同元聚合物之混合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。此外,比較例8係僅使用ATBS同元聚合物之實驗,與此相對,實施例12之研磨速度、凹陷及滾降等亦皆有改善。 Compared with the experiment of Comparative Example 5 using only AA homopolymer, Example 12 is an experiment using a mixture of AA homopolymer and ATBS homopolymer, in which the grinding speed, dent and roll-off are all improved. In addition, Comparative Example 8 is an experiment using only ATBS homopolymer. In contrast, Example 12 also improved the grinding speed, denting and roll-off.

實施例13係相對於比較例9,添加有機硫酸酯鹽化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。 Compared to Comparative Example 9, Example 13 was an experiment in which an organic sulfate ester salt compound was added, in which the grinding speed, dents, roll-off, etc. were all improved.

實施例14係改變用於實施例1之水溶性高分子化合物之組成,並使用由三種單體成分所構成之共聚物之實驗。 Example 14 is an experiment in which the composition of the water-soluble polymer compound used in Example 1 was changed and a copolymer composed of three monomer components was used.

實施例15係改變用於實施例3之水溶性高分子化合物之組成,並使用由三種單體成分所構成之共聚物之實驗。 Example 15 is an experiment in which the composition of the water-soluble polymer compound used in Example 3 was changed and a copolymer composed of three monomer components was used.

從以上結果可明顯得知,可藉由使用本發明之研磨劑組合物,使研磨速度、凹陷、滾降現象等方面皆獲改善。根據本發明,可在維持研磨速度之同時,減少基板表面之凹陷程度並減少滾降現象。 From the above results, it is obvious that by using the abrasive composition of the present invention, the polishing speed, denting, roll-off phenomena, etc. can be improved. According to the present invention, the degree of depression on the surface of the substrate and the rolling-off phenomenon can be reduced while maintaining the polishing speed.

[產業上之可用性] [Industrial availability]

本發明之研磨劑組合物,可用於半導體、硬碟等所謂磁記錄媒體等各種電子組件之研磨。特別是,可用於玻璃磁碟基板與鋁製磁碟基 板等之磁記錄媒體用基板之表面研磨。並且,可用於鋁合金製之基板表面形成無電解鎳-磷電鍍皮膜之磁記錄媒體用鋁製磁碟基板之表面研磨。 The abrasive composition of the present invention can be used for polishing various electronic components such as semiconductors, hard disks and other so-called magnetic recording media. In particular, it can be used for glass disk substrates and aluminum disk substrates. The surface of the substrate for magnetic recording media such as a board is polished. In addition, it can be used for surface polishing of aluminum disk substrates for magnetic recording media where an electroless nickel-phosphorus plating film is formed on the surface of the aluminum alloy substrate.

A、B、C、D‧‧‧點 Point A, B, C, D‧‧‧

h‧‧‧垂線 h‧‧‧vertical line

j、k、m、t‧‧‧線 j, k, m, t‧‧‧ line

Claims (10)

一種磁碟基板用研磨劑組合物,其包含:氧化鋁粒子;水溶性高分子化合物;有機硫酸酯鹽化合物;酸及/或其鹽類;以及水,其中該水溶性高分子化合物係一種包含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,及/或以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物,而該有機硫酸酯鹽化合物如下通式(1)所示,且pH值(25℃)範圍為0.1至4.0 R-O-SO3M (1)於式中,R表示碳數為5~21之直鏈或分支之烷基、烯基、烯丙基或烯丙烷基,M表示鹼金屬、鹼土族金屬、銨離子或有機陽離子。 An abrasive composition for disk substrates, which includes: alumina particles; water-soluble polymer compounds; organic sulfate ester salt compounds; acids and/or salts thereof; and water, wherein the water-soluble polymer compound is a compound containing A mixture of a polymer containing a monomer with a carboxylic acid group as an essential monomer and a polymer containing a monomer with a sulfonic acid group as an essential monomer, and/or a mixture of a monomer with a carboxylic acid group and a polymer with a sulfonic acid group The monomer is a copolymer of essential monomers, and the organic sulfate ester salt compound is represented by the following general formula (1), and the pH value (25°C) ranges from 0.1 to 4.0 RO-SO 3 M (1) in the formula , R represents a linear or branched alkyl, alkenyl, allyl or allyl group with a carbon number of 5 to 21, M represents an alkali metal, alkaline earth metal, ammonium ion or organic cation. 一種磁碟基板用研磨劑組合物,其包含:氧化鋁粒子;水溶性高分子化合物;有機硫酸酯鹽化合物;酸及/或其鹽類;以及水;其中該水溶性高分子化合物係一種包含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,及/ 或以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物,而該有機硫酸酯鹽化合物如下通式(2)所示,且pH值(25℃)範圍為0.1至4.0 R-O-(AO)n-SO3M (2)於式中,R表示碳數為5~21之直鏈或分支之烷基、烯基、烯丙基或烯丙烷基,AO表示碳數為2或3之氧伸烷基,n表示1~30之自然數,M表示鹼金屬、鹼土族金屬、銨離子或有機陽離子。 An abrasive composition for disk substrates, which includes: alumina particles; water-soluble polymer compounds; organic sulfate ester salt compounds; acids and/or salts thereof; and water; wherein the water-soluble polymer compound is a compound containing A mixture of polymers containing monomers with carboxylic acid groups as essential monomers and polymers containing monomers with sulfonic acid groups as essential monomers, and/or mixtures of polymers containing monomers with carboxylic acid groups and monomers with sulfonic acid groups The monomer is a copolymer of essential monomers, and the organic sulfate ester salt compound is represented by the following general formula (2), and the pH value (25°C) ranges from 0.1 to 4.0 RO-(AO) n -SO 3 M ( 2) In the formula, R represents a linear or branched alkyl, alkenyl, allyl or allyl group with a carbon number of 5 to 21, AO represents an oxyalkylene group with a carbon number of 2 or 3, and n represents A natural number from 1 to 30, M represents an alkali metal, alkaline earth metal, ammonium ion or organic cation. 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,其中該水溶性高分子化合物即以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物,係一種以具羧酸基之單體與具磺酸基之單體及具醯胺基之單體為必需單體之共聚物。 The abrasive composition for disk substrates described in the first or second patent scope, wherein the water-soluble polymer compound contains a monomer with a carboxylic acid group and a monomer with a sulfonic acid group as essential monomers The copolymer is a copolymer with monomers having carboxylic acid groups, monomers having sulfonic acid groups and monomers having amide groups as essential monomers. 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,其中該氧化鋁粒子含α-氧化鋁,且平均粒徑為0.1~2.0μm,且於該組合物中之濃度為1~50質量%。 The abrasive composition for disk substrates as described in item 1 or 2 of the patent application, wherein the alumina particles contain α-alumina, and the average particle size is 0.1~2.0 μm, and in the composition The concentration is 1~50% by mass. 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,其中該具羧酸基之單體係選自丙烯酸或其鹽類、甲基丙烯酸或其鹽類之單體。 The abrasive composition for disk substrates as described in item 1 or 2 of the patent application, wherein the monomer with a carboxylic acid group is selected from the group consisting of acrylic acid or its salts, methacrylic acid or its salts. . 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,其中該具磺酸基之單體係選自異戊二烯磺酸、2-丙烯醯胺-2-甲基丙磺酸、2-甲基丙烯醯胺-2-甲基丙磺酸、苯乙烯磺酸、乙烯磺酸、丙烯磺酸、異戊烯磺酸、乙烯萘磺酸以及其鹽類之一種或兩種以上之單體。 The abrasive composition for disk substrates as described in item 1 or 2 of the patent application, wherein the monosystem with a sulfonic acid group is selected from isoprene sulfonic acid, 2-acrylamide-2-methyl Propanesulfonic acid, 2-methacrylamide-2-methylpropanesulfonic acid, styrenesulfonic acid, ethylenesulfonic acid, propylenesulfonic acid, isopentenesulfonic acid, vinyl naphthalenesulfonic acid and one of their salts Or two or more monomers. 如申請專利範圍第3項所述之磁碟基板用研磨劑組合物,其中該具醯胺基之單體係選自丙烯醯胺、甲基丙烯醯胺、N-烷基丙烯醯胺、N-烷基甲基丙烯醯胺之單體。 The abrasive composition for disk substrates as described in item 3 of the patent application, wherein the monosystem with an amide group is selected from the group consisting of acrylamide, methacrylamide, N-alkyl acrylamide, N -Monomer of alkyl methacrylamide. 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,其中以該具羧酸基之單體為必需單體之聚合物、以該具磺酸基之單體為必需單體之聚合物、以該具羧酸基之單體及具磺酸基之單體為必需單體之共聚物及以該具羧酸基之單體與具磺酸基之單體及具醯胺基之單體為必需單體之共聚物之重量平均分子量各為1,000以上且1,000,000以下。 The abrasive composition for magnetic disk substrates described in item 1 or 2 of the patent application, wherein the monomer with a carboxylic acid group is a polymer that is an essential monomer, and the monomer with a sulfonic acid group is Polymers of essential monomers, copolymers using the monomer with a carboxylic acid group and a monomer with a sulfonic acid group as essential monomers, and copolymers with the monomer having a carboxylic acid group and a monomer with a sulfonic acid group and The weight average molecular weight of the copolymer in which the monomer having a amide group is an essential monomer is 1,000 or more and 1,000,000 or less. 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,其中該研磨劑組合物更含有氧化劑。 The abrasive composition for magnetic disk substrates described in the first or second patent application, wherein the abrasive composition further contains an oxidizing agent. 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,用於研磨無電解鎳-磷電鍍之鋁製磁碟基板。 The abrasive composition for magnetic disk substrates described in item 1 or 2 of the patent application is used for polishing aluminum magnetic disk substrates electroless nickel-phosphorus electroplated.
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* Cited by examiner, † Cited by third party
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US6336945B1 (en) * 1996-11-14 2002-01-08 Kao Corporation Abrasive composition for the base of magnetic recording medium and process for producing the base by using the same
CN102108281A (en) * 2009-12-25 2011-06-29 花王株式会社 Polishing composition
TW201734160A (en) * 2016-02-29 2017-10-01 Fujimi Inc Polishing composition and polishing method using same

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JP2014032718A (en) * 2012-08-01 2014-02-20 Kao Corp Method for manufacturing magnetic disk substrate

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6336945B1 (en) * 1996-11-14 2002-01-08 Kao Corporation Abrasive composition for the base of magnetic recording medium and process for producing the base by using the same
CN102108281A (en) * 2009-12-25 2011-06-29 花王株式会社 Polishing composition
TW201734160A (en) * 2016-02-29 2017-10-01 Fujimi Inc Polishing composition and polishing method using same

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