TW202018053A - Polishing composition for magnetic disk substrate - Google Patents

Polishing composition for magnetic disk substrate Download PDF

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TW202018053A
TW202018053A TW108127247A TW108127247A TW202018053A TW 202018053 A TW202018053 A TW 202018053A TW 108127247 A TW108127247 A TW 108127247A TW 108127247 A TW108127247 A TW 108127247A TW 202018053 A TW202018053 A TW 202018053A
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abrasive composition
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TWI811414B (en
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安藤順一郎
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日商山口精研工業股份有限公司
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Abstract

To reduce rolling and roll-off of a substrate after polishing while maintaining a polishing rate. A polishing agent composition is an aqueous composition containing at least alumina particles, a water-soluble polymer compound, and an organic sulfuric acid ester compound. Here, the water-soluble polymer compound is a mixture including a polymer containing a monomer having a carboxylic acid group as an essential monomer and a polymer containing a monomer having a sulfonic acid group as an essential monomer, and/or a copolymer containing a monomer having a carboxylic acid group and a monomer having a sulfonic acid group as an essential monomer.

Description

磁碟基板用研磨劑組合物 Abrasive composition for magnetic disk substrate

本發明係關於一種用於研磨所謂磁記錄媒體如半導體、硬碟等電子組件之研磨劑組合物。特別係關於一種用於進行玻璃磁碟基板或鋁製磁碟基板等磁記錄媒體用基板之表面研磨之研磨劑組合物。並且,係關於一種用於進行於鋁合金製基板表面形成無電解鎳-磷電鍍皮膜之磁記錄媒體用鋁製磁碟基板之表面研磨之研磨劑組合物。 The present invention relates to an abrasive composition for polishing electronic components such as so-called magnetic recording media such as semiconductors and hard disks. In particular, it relates to an abrasive composition for polishing the surface of a substrate for a magnetic recording medium such as a glass disk substrate or an aluminum disk substrate. In addition, it relates to an abrasive composition for polishing the surface of an aluminum disk substrate for a magnetic recording medium in which an electroless nickel-phosphorus plating film is formed on the surface of an aluminum alloy substrate.

傳統上,就生產效率之觀點而言,作為用於研磨鋁製磁碟基板之無電解鎳-磷電鍍皮膜表面之研磨劑組合物,一直使用將可實現較高研磨速度之氧化鋁粒子以水分散而成之研磨劑組合物。 Traditionally, from the viewpoint of production efficiency, as an abrasive composition for polishing the surface of electroless nickel-phosphorus electroplated coatings on aluminum disk substrates, aluminum oxide particles which can achieve a higher polishing rate with water have been used Dispersed abrasive composition.

以提升研磨速度、減少凹陷及減少滾降現象為目的,提出了在使用氧化鋁類研磨粒之研磨劑組合物中,使用各種結晶構造之氧化鋁粒子,使研磨速度提升並減少凹陷、滾降現象等高研磨面品質並存之方案。 For the purpose of increasing the polishing speed, reducing dents and reducing roll-off, it is proposed to use alumina particles of various crystal structures in the abrasive composition using alumina-based abrasive particles to increase the polishing speed and reduce dents and roll-off Phenomenon and other high-quality polished surfaces coexist.

在專利文獻1中,提出藉由使用含γ、δ、θ型之規定大小之氧化鋁研磨粒之研磨劑組合物,使研磨速度提高,能夠獲得較以往更高品質之研磨面。 Patent Document 1 proposes that by using an abrasive composition containing alumina abrasive grains of a predetermined size of γ, δ, and θ type, the polishing speed is increased, and a higher quality polishing surface can be obtained than in the past.

在專利文獻2中,提出藉由使用含α-氧化鋁以外之氧化鋁即中間氧化鋁之研磨劑組合物,可降低表面凹陷程度,並提升研磨速度之方 案。 Patent Document 2 proposes that by using an abrasive composition containing alumina other than α-alumina, that is, intermediate alumina, the degree of surface recession can be reduced and the polishing rate can be increased case.

在專利文獻3中,提出藉由使用含α-氧化鋁、中間氧化鋁之研磨劑組合物,可達成高研磨速度,並減少凹陷之方案。然而,凹陷減少效果並不充分,而正尋求改良。 Patent Document 3 proposes that by using an abrasive composition containing α-alumina and intermediate alumina, it is possible to achieve a high polishing rate and reduce dents. However, the dent reduction effect is not sufficient, and improvement is being sought.

在專利文獻4中,提出在使用含研磨材、助磨劑與水之研磨材組合物研磨磁記錄媒體基板時,可藉由使用脂肪族類有機硫酸鹽作為助磨劑,以提高研磨速度並減少表面粗糙度之方案。然而,該方案對於研磨速度提升與表面粗糙度減少並不充分,而正尋求改良。 Patent Document 4 proposes that when an abrasive material composition containing abrasives, grinding aids and water is used to polish a magnetic recording medium substrate, an aliphatic organic sulfate can be used as a grinding aid to increase the grinding speed and Plan to reduce surface roughness. However, this solution is not sufficient for increasing the polishing speed and reducing the surface roughness, and is seeking improvement.

[先前技術文獻] [Prior Technical Literature]

專利文獻 Patent Literature

專利文獻1:日本專利特開平11-268911號公報 Patent Document 1: Japanese Patent Laid-Open No. 11-268911

專利文獻2:日本專利特開2001-89746號公報 Patent Document 2: Japanese Patent Laid-Open No. 2001-89746

專利文獻3:日本專利特開2005-23266號公報 Patent Document 3: Japanese Patent Laid-Open No. 2005-23266

專利文獻4:國際公開第1998/021289號 Patent Literature 4: International Publication No. 1998/021289

然而,如專利文獻1~4所述,若使用添加中間氧化鋁之研磨劑組合物研磨磁碟基板,將導致研磨後凹陷情況惡化等產品品質低落等問題。 However, as described in Patent Documents 1 to 4, if an abrasive composition added with intermediate alumina is used to polish a magnetic disk substrate, it will cause problems such as deterioration of the dent after polishing and product quality degradation.

本發明之課題,在於維持研磨速度,且實現減少研磨後基板之凹陷程度及減少滾降現象。 The problem of the present invention is to maintain the polishing speed, and to achieve the reduction of the degree of depression of the substrate after the polishing and the reduction of the roll-off phenomenon.

本發明者等針對上述課題,潛心研究各種蝕刻劑之添加,發現可解決上述課題,進而完成本發明。也就是說,本發明係如下之研磨劑組合物。 In view of the above-mentioned problems, the present inventors diligently studied the addition of various etchants, found that the above-mentioned problems can be solved, and completed the present invention. That is, the present invention is the following abrasive composition.

〔1〕包含氧化鋁粒子、水溶性高分子量化合物、有機硫酸酯鹽化合物以及水之磁碟基板用研磨劑組合物。其中該水溶性高分子量化合物,係一種包含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,及/或以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物;而該有機硫酸酯鹽化合物如下通式(1)所示R-O-SO3M (1)於式中,R表示碳數為5~21之直鏈或分支之烷基、烯基、烯丙基或烯丙烷基,M表示鹼金屬、鹼土族金屬、銨離子或有機陽離子。 [1] An abrasive composition for a magnetic disk substrate containing alumina particles, a water-soluble high molecular weight compound, an organic sulfate ester compound, and water. Wherein the water-soluble high molecular weight compound is a mixture of a polymer containing a monomer having a carboxylic acid group as an essential monomer and a polymer using a monomer having a sulfonic acid group as an essential monomer, and/or The carboxylic acid group monomer and the sulfonic acid group monomer are copolymers of essential monomers; and the organic sulfate ester salt compound is represented by the following general formula (1) RO-SO 3 M (1) In the formula, R It represents a linear or branched alkyl group, alkenyl group, allyl group or allyl group with a carbon number of 5 to 21. M represents an alkali metal, alkaline earth metal, ammonium ion or organic cation.

〔2〕包含氧化鋁粒子、水溶性高分子量化合物、有機硫酸酯鹽化合物以及水之磁碟基板用研磨劑組合物。其中該水溶性高分子量化合物,係一種包含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,及/或以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物;而該有機硫酸酯鹽化合物如下通式(2)所示R-O-(AO)n-SO3M (2)於式中,R表示碳數為5~21之直鏈或分支之烷基、烯基、烯丙基或烯丙烷基,AO表示碳數為2或3之氧伸烷基,n表示1~30之自然數,M表示鹼金屬、鹼土族金屬、銨離子或有機陽離子。 [2] An abrasive composition for a magnetic disk substrate containing alumina particles, a water-soluble high molecular weight compound, an organic sulfate ester compound, and water. Wherein the water-soluble high molecular weight compound is a mixture of a polymer containing a monomer having a carboxylic acid group as an essential monomer and a polymer using a monomer having a sulfonic acid group as an essential monomer, and/or The carboxylic acid group monomer and the sulfonic acid group monomer are copolymers of essential monomers; and the organic sulfate ester salt compound is represented by the following general formula (2) RO-(AO) n -SO 3 M (2) In the formula, R represents a linear or branched alkyl group, alkenyl group, allyl group or allyl group having 5 to 21 carbon atoms, AO represents an oxyalkylene group having 2 or 3 carbon atoms, and n represents 1 to 1 Natural number of 30, M represents alkali metal, alkaline earth metal, ammonium ion or organic cation.

〔3〕如上述〔1〕或〔2〕所述之磁碟基板用研磨劑組合物,其中該水溶性高分子量化合物即以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物,係一種以具羧酸基之單體與具磺酸基之單體及具醯胺基之單體為必需單體之共聚物。 [3] The abrasive composition for a magnetic disk substrate as described in [1] or [2] above, in which the water-soluble high molecular weight compound is a monomer having a carboxylic acid group and a monomer having a sulfonic acid group A monomer copolymer is a copolymer in which a monomer having a carboxylic acid group, a monomer having a sulfonic acid group and a monomer having an amide group are essential monomers.

〔4〕如上述〔1〕至〔3〕之任一項所述之磁碟基板用研磨劑組合物,其中該氧化鋁粒子含α-氧化鋁,且平均粒徑為0.1~2.0μm,且於該組合物中之濃度為1~50質量%。 [4] The abrasive composition for a magnetic disk substrate as described in any one of [1] to [3] above, wherein the alumina particles contain α-alumina and the average particle diameter is 0.1 to 2.0 μm, and The concentration in the composition is 1-50% by mass.

〔5〕如上述〔1〕至〔4〕之任一項所述之磁碟基板用研磨劑組合物,其中該具羧酸基之單體係選自丙烯酸或其鹽類、甲基丙烯酸或其鹽類之單體。 [5] The abrasive composition for a magnetic disk substrate as described in any one of [1] to [4] above, wherein the single system having a carboxylic acid group is selected from acrylic acid or its salts, methacrylic acid or Monomers of its salts.

〔6〕如上述〔1〕至〔5〕之任一項所述之磁碟基板用研磨劑組合物,其中該具磺酸基之單體係選自異戊二烯磺酸、2-丙烯醯胺-2-甲基丙磺酸、2-甲基丙烯醯胺-2-甲基丙磺酸、苯乙烯磺酸、乙烯磺酸、丙烯磺酸、異戊烯磺酸、乙烯萘磺酸以及其鹽類之一種或兩種以上之單體。 [6] The abrasive composition for a magnetic disk substrate as described in any one of [1] to [5] above, wherein the single system having a sulfonic acid group is selected from isoprenesulfonic acid and 2-propene Acetylamine-2-methylpropanesulfonic acid, 2-methacrylamide-2-methylpropanesulfonic acid, styrenesulfonic acid, ethylenesulfonic acid, propylenesulfonic acid, isopentenylsulfonic acid, ethylenenaphthalenesulfonic acid And one or more than two monomers of its salts.

〔7〕如上述〔3〕所述之磁碟基板用研磨劑組合物,其中該具醯胺基之單體係選自丙烯醯胺、甲基丙烯醯胺、N-烷基丙烯醯胺、N-烷基甲基丙烯醯胺之單體。 [7] The abrasive composition for a magnetic disk substrate as described in [3] above, wherein the single system having an amide group is selected from acrylamide, methacrylamide, N-alkylacrylamide, N-alkyl methacrylamide monomer.

〔8〕如上述〔1〕至〔7〕之任一項所述之磁碟基板用研磨劑組合物,其中以該具羧酸基之單體為必需單體之聚合物、以該具磺酸基之單體為必需單體之聚合物、以該具羧酸基之單體及具磺酸基之單體為必需單體之共聚物及以該具羧酸基之單體與具磺酸基之單體及具醯胺基之單體為必需單體之共聚物之重量平均分子量各為1,000以上且1,000,000以 下。 [8] The abrasive composition for a magnetic disk substrate as described in any one of [1] to [7] above, wherein the polymer having the carboxylic acid group-containing monomer as an essential monomer, the sulfonate The acid group-based monomer is a polymer of essential monomers, the copolymer having the carboxylic acid group-containing monomer and the sulfonic acid group-based monomer as essential monomers, and the carboxylic acid group-containing monomer and the sulfonate group The weight average molecular weight of the acid group-based monomer and the amide group-based monomer are essential monomers, each of which is 1,000 or more and 1,000,000. under.

〔9〕如上述〔1〕至〔8〕之任一項所述之磁碟基板用研磨劑組合物,其中該研磨劑組合物更含有酸及/或其鹽類,且pH值(25℃)範圍為0.1至4.0。 [9] The abrasive composition for a magnetic disk substrate according to any one of the above [1] to [8], wherein the abrasive composition further contains an acid and/or its salt, and the pH value (25°C ) Ranges from 0.1 to 4.0.

〔10〕如上述〔1〕至〔9〕之任一項所述之磁碟基板用研磨劑組合物,其中該研磨劑組合物更含有氧化劑。 [10] The abrasive composition for a magnetic disk substrate according to any one of [1] to [9] above, wherein the abrasive composition further contains an oxidizing agent.

〔11〕如上述〔1〕至〔10〕之任一項所述之磁碟基板用研磨劑組合物,用於研磨無電解鎳-磷電鍍之鋁製磁碟基板。 [11] The abrasive composition for a magnetic disk substrate according to any one of the above [1] to [10], which is used to polish an electroless nickel-phosphorus plated aluminum magnetic disk substrate.

本發明之磁碟基板用研磨劑組合物,可維持研磨速度,且同時減少基板表面之凹陷程度及減少滾降現象。 The polishing composition for a magnetic disk substrate of the present invention can maintain the polishing speed, and at the same time reduce the degree of depression on the surface of the substrate and reduce the roll-off phenomenon.

A、B、C、D‧‧‧點 A, B, C, D ‧‧‧ points

h‧‧‧垂線 h‧‧‧Vertical

j、k、m、t‧‧‧線 j, k, m, t ‧‧‧ line

圖1係針對研磨基板之表面時測定滾降現象進行說明之圖。 FIG. 1 is a diagram illustrating the measurement of the roll-off phenomenon when polishing the surface of a substrate.

以下說明本發明之實施方式,唯本發明並不限定於以下實施方式,本發明所屬技術技術領域中具有通常知識者可在不背離本發明之趣旨範圍內,對以下實施方式進行適當變更、改良等,而仍屬於本發明之範圍。 The embodiments of the present invention are described below, but the present invention is not limited to the following embodiments. Those with ordinary knowledge in the technical field to which the present invention pertains may make appropriate changes and improvements to the following embodiments without departing from the scope of the invention. Etc., and still fall within the scope of the invention.

1.研磨劑組合物 1. Abrasive composition

本發明之研磨劑組合物,係至少包含氧化鋁粒子、水溶性高分子量化合物以及有機硫酸酯鹽化合物之含水組合物。在此,水溶性高分子量化合 物,係一種包含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,及/或以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物。 The abrasive composition of the present invention is an aqueous composition containing at least alumina particles, a water-soluble high molecular weight compound, and an organic sulfate salt compound. Here, the water-soluble polymer Is a mixture of a polymer containing a monomer having a carboxylic acid group as an essential monomer and a polymer having a monomer having a sulfonic acid group as an essential monomer, and/or a monomer having a carboxylic acid group And monomers with sulfonic acid groups are copolymers of essential monomers.

(1)氧化鋁粒子 (1) Alumina particles

本發明之磁碟基板用研磨劑組合物所含膠質氧化矽,平均粒徑(D50)較佳為5~200nm。藉由使平均粒徑(D50)為5nm以上,可抑制研磨速度之低落。藉由使平均粒徑(D50)為200nm以下,可抑制表面平滑度之惡化。膠質氧化矽之平均粒徑(D50),更佳為10~150nm,尤佳為20~120nm。 The colloidal silica contained in the abrasive composition for a magnetic disk substrate of the present invention preferably has an average particle diameter (D50) of 5 to 200 nm. By setting the average particle diameter (D50) to 5 nm or more, it is possible to suppress a decrease in the polishing rate. By setting the average particle diameter (D50) to 200 nm or less, the deterioration of surface smoothness can be suppressed. The average particle diameter (D50) of colloidal silica is more preferably 10 to 150 nm, and particularly preferably 20 to 120 nm.

作為製備氧化鋁之際之原料,可列舉三水鋁石:Al2O3‧3H2O、水鋁石:Al2O3‧H2O、似水鋁石:Al2O3‧nH2O(n=1~2)等。該等氧化鋁原料,例如可透過如下方式調製。 As a raw material for preparing alumina, gibbsite: Al 2 O 3 ‧3H 2 O, diaspore: Al 2 O 3 ‧H 2 O, diaspore-like: Al 2 O 3 ‧nH 2 O(n=1~2) etc. These alumina raw materials can be prepared as follows, for example.

三水鋁石:Al2O3‧3H2O Gibbsite: Al 2 O 3 ‧3H 2 O

將鋁礬土以氫氧化鈉之熱溶液進行溶解,再將過濾去除不溶成分後所得之溶液進行冷卻,最後將其結果所得之沈澱物經乾燥處理後,可得三水鋁石。 Dissolve the bauxite with a hot solution of sodium hydroxide, and then cool the solution obtained by filtering to remove insoluble components. Finally, the resulting precipitate is dried to obtain gibbsite.

水鋁石:Al2O3‧H2O Diaspore: Al 2 O 3 ‧H 2 O

將金屬鋁與乙醇反應後所得之烷氧化鋁:Al(OR)3加水分解後,可得水鋁石。 The aluminum alkoxide obtained after the reaction of metallic aluminum and ethanol: Al(OR) 3 is hydrolyzed to obtain diaspore.

似水鋁石:Al2O3‧nH2O(n=1~2) Diaspore-like: Al 2 O 3 ‧nH 2 O(n=1~2)

將三水鋁石於鹼性環境氣體下,以水蒸氣處理後,可得似水鋁石。 The gibbsite is treated with water vapor under alkaline ambient gas, it can be like diaspore.

將該等氧化鋁原料經燒成處理後,可得α-氧化鋁、γ-氧化鋁、δ-氧化 鋁、θ-氧化鋁等。 After firing these alumina raw materials, α-alumina, γ-alumina, δ-oxidation can be obtained Aluminum, θ-alumina, etc.

氧化鋁粒子之平均粒徑(D50),較佳為0.1~2.0μm,尤佳為0.2~1.0μm。藉由使氧化鋁粒子之平均粒徑為0.1μm以上,可抑制研磨速度之低落。藉由使氧化鋁粒子之平均粒徑為2.0μm以下,可抑制研磨後之凹陷程度惡化。 The average particle diameter (D50) of the alumina particles is preferably 0.1 to 2.0 μm, and particularly preferably 0.2 to 1.0 μm. By setting the average particle diameter of the alumina particles to 0.1 μm or more, it is possible to suppress a decrease in the polishing rate. By setting the average particle diameter of the alumina particles to 2.0 μm or less, it is possible to suppress the deterioration of the degree of depression after polishing.

氧化鋁粒子佔研磨劑組合物全體之濃度,較佳為1~50質量%,尤佳為2~40質量%。藉由使氧化鋁粒子之濃度為1質量%以上,可抑制研磨速度之低落。藉由使氧化鋁粒子之濃度為50質量%以下,無需使用到不必要之氧化鋁粒子,可更經濟並有利地進行研磨。 The concentration of alumina particles in the entire abrasive composition is preferably 1 to 50% by mass, particularly preferably 2 to 40% by mass. By setting the concentration of the alumina particles to 1% by mass or more, the decrease in the polishing rate can be suppressed. By setting the concentration of alumina particles to 50% by mass or less, unnecessary alumina particles need not be used, and grinding can be performed more economically and advantageously.

(2)水溶性高分子量化合物 (2) Water-soluble high molecular weight compounds

用於本發明之水溶性高分子量化合物,係含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,及/或具羧酸基之單體及具磺酸基之單體以為必需單體之共聚物。此外,亦可使用該等以外之單體。作為具羧酸基之單體及具磺酸基之單體以外之單體,例如可列舉具醯胺基之單體。 The water-soluble high molecular weight compound used in the present invention is a mixture of a polymer containing a monomer having a carboxylic acid group as an essential monomer and a polymer using a monomer having a sulfonic acid group as an essential monomer, and/or The monomer having a carboxylic acid group and the monomer having a sulfonic acid group are copolymers of essential monomers. In addition, monomers other than these can also be used. Examples of monomers other than monomers having a carboxylic acid group and monomers having a sulfonic acid group include monomers having an amide group.

(2-1)具羧酸基之單體 (2-1) Monomer with carboxylic acid group

作為具羧酸基之單體,較佳為使用不飽和脂肪族醯胺及其鹽類。更具體而言,可列舉丙烯酸、甲基丙烯酸、順丁烯二酸、伊康酸及該等之鹽類。作為鹽類,可列舉鈉鹽、鉀鹽、鎂鹽、銨鹽、胺鹽、烷基銨鹽等。 As the monomer having a carboxylic acid group, an unsaturated aliphatic amide and its salts are preferably used. More specifically, acrylic acid, methacrylic acid, maleic acid, itaconic acid, and salts of these can be mentioned. Examples of the salts include sodium salt, potassium salt, magnesium salt, ammonium salt, amine salt, and alkyl ammonium salt.

水溶性高分子量化合物中,可根據具羧酸基之單體,是以酸之狀態存在之比例較多,抑或是以鹽之狀態存在之比例較多,來評價水溶性高分子量化合物之pH值。若以酸存在之比例愈高,其pH值變得愈低, 若以鹽存在之比例愈高,其pH值變得愈高。在本發明中,例如,在水溶性高分子量化合物濃度為10質量%之水溶液中,可使用pH值(25℃)為0.1~13之範圍之水溶性高分子量化合物。 Among the water-soluble high-molecular-weight compounds, the pH value of the water-soluble high-molecular-weight compound can be evaluated according to the proportion of the monomer having a carboxylic acid group in the acid state or in the salt state. . If the ratio of acid is higher, the pH value becomes lower, If the proportion of salt is higher, the pH value becomes higher. In the present invention, for example, in an aqueous solution having a water-soluble high molecular weight compound concentration of 10% by mass, a water-soluble high molecular weight compound having a pH value (25° C.) in the range of 0.1 to 13 can be used.

(2-2)具磺酸基之單體 (2-2) Monomer with sulfonic acid group

作為具磺酸基之單體之具體範例,可列舉異戊二烯磺酸、2-丙烯醯胺-2-甲基丙磺酸、2-甲基丙烯醯胺-2-甲基丙磺酸、苯乙烯磺酸、乙烯磺酸、丙烯磺酸、異戊烯磺酸、乙烯萘磺酸及該等之鹽類等。可自此類當中選擇一種或兩種以上作為單體使用。較佳可列舉2-丙烯醯胺-2-甲基丙磺酸、2-甲基丙烯醯胺-2-甲基丙磺酸及該等之鹽類等。 Specific examples of the monomer having a sulfonic acid group include isoprenesulfonic acid, 2-acrylamide-2-methylpropanesulfonic acid, 2-methacrylamide-2-methylpropanesulfonic acid , Styrenesulfonic acid, ethylenesulfonic acid, propylenesulfonic acid, isopentenylsulfonic acid, vinylnaphthalenesulfonic acid and their salts. One kind or two or more kinds can be selected and used as a monomer. Preferred examples include 2-acrylamide-2-methylpropanesulfonic acid, 2-methacrylamide-2-methylpropanesulfonic acid, and salts thereof.

(2-3)其他單體 (2-3) Other monomers

用於本發明之水溶性高分子量化合物,係以具羧酸基之單體及以具磺酸基之單體為必需單體,唯亦可使用該等以外之單體。例如,亦可使用具醯胺基之單體。具體而言,可使用丙烯醯胺、甲基丙烯醯胺、N-烷基丙烯醯胺、N-烷基甲基丙烯醯胺等。 The water-soluble high-molecular-weight compound used in the present invention uses monomers having a carboxylic acid group and monomers having a sulfonic acid group as essential monomers, but monomers other than these can also be used. For example, a monomer having an amide group can also be used. Specifically, acrylamide, methacrylamide, N-alkylacrylamide, N-alkylmethacrylamide, and the like can be used.

作為N-烷基丙烯醯胺、N-烷基甲基丙烯醯胺之具體範例,可列舉N-甲基丙烯醯胺、N-乙基丙烯醯胺、N-n-丙基丙烯醯胺、N-異丙基丙烯醯胺、N-n-丁基丙烯醯胺、N-異丁基丙烯醯胺、N-二級丁基丙烯醯胺、N-叔丁基丙烯醯胺、N-甲基甲基丙烯醯胺、N-乙基甲基丙烯醯胺、N-n-丙基甲基丙烯醯胺、N-異丙基甲基丙烯醯胺、N-n-丁基甲基丙烯醯胺、N-異丁基甲基丙烯醯胺、N-二級丁基甲基丙烯醯胺、N-叔丁基甲基丙烯醯胺等。 Specific examples of N-alkylacrylamide and N-alkylmethacrylamide include N-methacrylamide, N-ethylacrylamide, Nn-propylacrylamide, and N- Isopropylacrylamide, Nn-butylacrylamide, N-isobutylacrylamide, N-secondary butylacrylamide, N-tert-butylacrylamide, N-methylmethacryl Acetamide, N-ethylmethacrylamide, Nn-propylmethacrylamide, N-isopropylmethacrylamide, Nn-butylmethacrylamide, N-isobutylmethacrylamide , N-secondary butyl methacrylamide, N-tert-butyl methacrylamide, etc.

(2-4)聚合物之混合物 (2-4) Mixture of polymers

用於本發明之水溶性高分子量化合物,亦可為含以具羧酸基之單體為必需單體之聚合物與具以磺酸基之單體為必需單體之聚合物之混合物。該情況下,作為構成混合物之聚合物,作為以具羧酸基之單體為必需單體之聚合物,可列舉將具羧酸基之單體聚合而成之聚合物、具羧酸基之單體與具磺酸基之單體之共聚物、具羧酸基之單體與其他單體之共聚物、具羧酸基之單體與具磺酸基之單體與其他單體之共聚物等。 The water-soluble high molecular weight compound used in the present invention may also be a mixture of a polymer containing a monomer having a carboxylic acid group as an essential monomer and a polymer containing a monomer having a sulfonic acid group as an essential monomer. In this case, as a polymer constituting the mixture, as a polymer having a monomer having a carboxylic acid group as an essential monomer, a polymer obtained by polymerizing a monomer having a carboxylic acid group, a polymer having a carboxylic acid group Copolymer of monomer and monomer with sulfonic acid group, copolymer of monomer with carboxylic acid group and other monomer, copolymerization of monomer with carboxylic acid group and monomer with sulfonic acid group and other monomer Things.

此外,作為以具磺酸基之單體為必需單體之聚合物,可列舉將具磺酸基之單體聚合而成之聚合物、具羧酸基之單體與具磺酸基之單體之共聚物、具磺酸基之單體與其他單體之共聚物、具羧酸基之單體與具磺酸基之單體與其他單體之共聚物等。 In addition, as a polymer in which a monomer having a sulfonic acid group is an essential monomer, a polymer obtained by polymerizing a monomer having a sulfonic acid group, a monomer having a carboxylic acid group, and a monomer having a sulfonic acid group Copolymers, copolymers of monomers with sulfonic acid groups and other monomers, copolymers of monomers with carboxylic acid groups and monomers with sulfonic acid groups and other monomers, etc.

含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,係自該等以具羧酸基之單體為必需單體之聚合物及以具磺酸基之單體為必需單體之聚合物當中,各一種以上之聚合物之混合物。混合物中,以具羧酸基之單體為必需單體之聚合物之比例,較佳為5~95質量%,尤佳為8~92質量%,更佳為10~90質量%。混合物中,以具磺酸基之單體為必需單體之聚合物之比例,較佳為5~95質量%,尤佳為8~92質量%,更佳為10~90質量%。 Mixtures of polymers containing monomers with carboxylic acid groups as essential monomers and polymers with monomers with sulfonic acid groups as essential monomers are derived from these monomers with carboxylic acid groups as essential monomers Among polymers of polymers and polymers that use monomers with sulfonic acid groups as essential monomers, a mixture of more than one polymer. In the mixture, the proportion of the polymer having a monomer having a carboxylic acid group as an essential monomer is preferably 5 to 95% by mass, particularly preferably 8 to 92% by mass, and more preferably 10 to 90% by mass. In the mixture, the ratio of the polymer having a monomer having a sulfonic acid group as an essential monomer is preferably 5 to 95% by mass, particularly preferably 8 to 92% by mass, and more preferably 10 to 90% by mass.

(2-5)共聚物 (2-5) Copolymer

用於本發明之水溶性高分子量化合物,亦可為以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物。共聚物中,以具羧酸基之單體為構成單位之比例,較佳為5~95莫耳%,尤佳為8~92莫耳%,更佳為10~90莫耳%。以具磺酸基之單體為構成單位之比例,較佳為5~95莫耳%,尤佳 為8~92莫耳%,更佳為10~90莫耳%。 The water-soluble high molecular weight compound used in the present invention may also be a copolymer in which a monomer having a carboxylic acid group and a monomer having a sulfonic acid group are essential monomers. In the copolymer, the proportion of monomers having a carboxylic acid group as a constituent unit is preferably 5 to 95 mol%, particularly preferably 8 to 92 mol%, and more preferably 10 to 90 mol%. The proportion of monomers with sulfonic acid groups as constituent units, preferably 5 to 95 mol%, particularly preferred It is 8 to 92 mol%, more preferably 10 to 90 mol%.

(2-6)水溶性高分子量化合物之製備方法 (2-6) Preparation method of water-soluble high molecular weight compound

水溶性高分子量化合物之製備方法雖無特殊限制,然較佳為水溶液聚合法。藉由水溶液聚合法,可形成均一溶液而獲得水溶性高分子量化合物。上述水溶液聚合中之聚合溶媒較佳為水性溶媒,特佳為水。此外,為提升上述單體成分對溶媒之溶解性,可在不對各單體之聚合造成不良影響之範圍內,適當加入有機溶媒。上述有機溶媒的實例包含異丙基乙醇等乙醇類以及丙酮等酮類。上述溶媒可單獨使用一種,或組合兩種以上使用。 Although the preparation method of the water-soluble high molecular weight compound is not particularly limited, it is preferably an aqueous solution polymerization method. By the aqueous solution polymerization method, a uniform solution can be formed to obtain a water-soluble high molecular weight compound. The polymerization solvent in the above-mentioned aqueous solution polymerization is preferably an aqueous solvent, particularly preferably water. In addition, in order to improve the solubility of the above monomer components to the solvent, an organic solvent can be added appropriately within a range that does not adversely affect the polymerization of each monomer. Examples of the organic solvent include ethanols such as isopropyl ethanol and ketones such as acetone. These solvents can be used alone or in combination of two or more.

以下說明運用上述水性溶媒之水溶性高分子量化合物之製備方法。在聚合反應過程中,可使用眾所周知之聚合起始劑,特佳為使用自由基聚合起始劑。自由基聚合起始劑的實例包含:過硫酸鈉、過硫酸鉀或過硫酸銨等過硫酸鹽;叔丁基氫過氧化物等氫過氧化物類;過氧化氫等水溶性過氧化物、甲基乙基酮過氧化物、環己酮過氧化物等酮過氧化物類;二叔丁基過氧化物、叔丁基異丙苯過氧化物等二烷基過氧化物類等之油溶性過氧化物;偶氮雙異丁腈、2,2-偶氮雙(2-甲基丙脒)二氫氯化物等偶氮化合物。該等過氧化物類之自由基聚合起始劑可僅使用一種,亦可選擇兩種以上併用。上述過氧化物類之自由基聚合起始劑當中,若從容易控制所生成之水溶性高分子量化合物之分子量之角度而言,較佳為過硫酸鹽或偶氮化合物,特佳為偶氮雙異丁腈。 The following describes the preparation method of the water-soluble high molecular weight compound using the above-mentioned aqueous solvent. During the polymerization reaction, a well-known polymerization initiator can be used, and a radical polymerization initiator is particularly preferably used. Examples of radical polymerization initiators include: persulfates such as sodium persulfate, potassium persulfate or ammonium persulfate; hydroperoxides such as t-butyl hydroperoxide; water-soluble peroxides such as hydrogen peroxide, Ketone peroxides such as methyl ethyl ketone peroxide and cyclohexanone peroxide; dialkyl peroxides such as di-tert-butyl peroxide and tert-butyl cumene peroxide Soluble peroxides; azo compounds such as azobisisobutyronitrile, 2,2-azobis(2-methylpropionamidine) dihydrochloride. Only one kind of these peroxide-based radical polymerization initiators may be used, or two or more kinds may be selected for use in combination. Among the above-mentioned peroxide-based radical polymerization initiators, if it is easy to control the molecular weight of the water-soluble high molecular weight compound produced, it is preferably a persulfate or an azo compound, and particularly preferably an azobis Isobutyronitrile.

儘管上述自由基聚合起始劑之用量無特殊限制,但若根據水溶性高分子量化合物之所有單體之總質量而言,較佳為以0.1~15質量%之比例使用,特佳為以0.5~10質量%之比例使用。藉由將該比例提升至0.1 質量%以上,可提升共聚合率,而將比例控制在15質量%以下,可提升水溶性高分子量化合物之穩定性。 Although the amount of the above radical polymerization initiator is not particularly limited, if it is based on the total mass of all monomers of the water-soluble high molecular weight compound, it is preferably used at a ratio of 0.1 to 15% by mass, and particularly preferably 0.5 ~10% by mass. By raising the ratio to 0.1 Above mass%, the copolymerization rate can be improved, and controlling the ratio below 15 mass% can improve the stability of the water-soluble high molecular weight compound.

此外,根據情況,水溶性高分子量化合物,可使用水溶性氧化還原類聚合起始劑進行製備。氧化還原類聚合起始劑的實例包含氧化劑(如上述之過氧化物)以及重亞硫酸鈉、重亞硫酸銨、亞硫酸銨、氫亞硫酸鹽鈉等還原劑或鐵明礬及鉀明礬等之組合。 In addition, water-soluble high-molecular-weight compounds can be prepared using water-soluble redox-type polymerization initiators according to circumstances. Examples of the redox-based polymerization initiator include an oxidizing agent (such as the above-mentioned peroxide) and a reducing agent such as sodium bisulfite, ammonium bisulfite, ammonium sulfite, sodium hydrosulfite, or a combination of iron alum and potassium alum.

在製備水溶性高分子量化合物之過程中,為調整分子量,可於聚合系統中適當添加鏈鎖轉移劑。鏈鎖轉移劑的實例包含亞磷酸鈉、次亞磷酸鈉、次亞磷酸鉀、亞硫酸鈉、亞硫酸氫鈉、巰基醋酸、巰基二乙基酮酸、硫乙醇酸、2-丙硫醇、2-巰基乙醇及硫苯酚等。 In the process of preparing water-soluble high molecular weight compounds, in order to adjust the molecular weight, a chain transfer agent may be appropriately added to the polymerization system. Examples of chain transfer agents include sodium phosphite, sodium hypophosphite, potassium hypophosphite, sodium sulfite, sodium bisulfite, thioglycolic acid, mercaptodiethyl keto acid, thioglycolic acid, 2-propanethiol, 2- Mercaptoethanol and thiophenol etc.

製備水溶性高分子量化合物時之聚合溫度並無特別限制,但以在聚合溫度為60~100℃時製備較佳。藉由使聚合溫度達60℃以上,可使聚合反應順利進行,且產能表現優異,而藉由控制在100℃以下,可抑制著色。 The polymerization temperature when preparing a water-soluble high molecular weight compound is not particularly limited, but it is preferably prepared when the polymerization temperature is 60 to 100°C. By setting the polymerization temperature to 60°C or higher, the polymerization reaction can proceed smoothly and the productivity is excellent, and by controlling it to 100°C or lower, coloring can be suppressed.

此外,聚合反應可於加壓或減壓下進行,然加壓或減壓反應用的設備需外加成本,故較佳為在常壓下進行。聚合反應進行時間較佳為2~20小時,特佳為3~10小時。 In addition, the polymerization reaction can be carried out under pressure or reduced pressure. However, the equipment for the pressure or reduced pressure reaction requires additional costs, so it is preferably carried out under normal pressure. The polymerization reaction time is preferably 2 to 20 hours, and particularly preferably 3 to 10 hours.

聚合反應後,可依需使用鹼性化合物進行中和反應。用於中和反應之鹼性化合物的實例包含:氫氧化鈉或氫氧化鉀等鹼金屬氫氧化物,氫氧化鈣、氫氧化鎂等鹼土金屬氫氧化物,氨水,以及單乙醇胺、二乙醇胺、三乙醇胺等有機胺等。 After the polymerization reaction, a basic compound can be used for neutralization as needed. Examples of the basic compound used in the neutralization reaction include: alkali metal hydroxides such as sodium hydroxide or potassium hydroxide, alkaline earth metal hydroxides such as calcium hydroxide and magnesium hydroxide, ammonia water, and monoethanolamine, diethanolamine, Organic amines such as triethanolamine.

在水溶性高分子量化合物濃度為10質量%之水溶液中,中 和後或無實施中和反應時之pH值(25℃)較佳為2~9,更加為3~8。 In an aqueous solution with a water-soluble high molecular weight compound concentration of 10% by mass, medium The pH value (25°C) after the neutralization reaction or without the neutralization reaction is preferably 2 to 9, and more preferably 3 to 8.

(2-7)重量平均分子量 (2-7) Weight average molecular weight

構成用於本發明之水溶性高分子量化合物之以具羧酸基之單體為必需單體之聚合物、以具磺酸基之單體為必需單體之聚合物及、以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物、以具羧酸基之單體與具磺酸基之單體及具醯胺基之單體為必需單體之共聚物之重量平均分子量,較佳為各1,000以上且1,000,000以下,尤佳為3,000以上且800,000以下,更佳為5,000以上且600,000以下。此外,水溶性高分子量化合物之重量平均分子量係藉由凝膠滲透層析術(GPC)經聚丙烯酸換算進行測定。若水溶性高分子量化合物之重量平均分子量未滿1,000,將使研磨後之凹陷程度惡化;而重量平均分子量超過10,000,000,將使水溶液黏度增強而變得難以處理。 The polymer having a carboxylic acid group-based monomer as an essential monomer, the polymer having a sulfonic acid group-based monomer as an essential monomer, and the carboxylic acid group The monomers and monomers with sulfonic acid groups are copolymers of essential monomers, and the copolymers of monomers with carboxylic acid groups and monomers with sulfonic acid groups and monomers with amide groups are essential monomers The weight average molecular weight is preferably 1,000 or more and 1,000,000 or less, particularly preferably 3,000 or more and 800,000 or less, and more preferably 5,000 or more and 600,000 or less. In addition, the weight average molecular weight of the water-soluble high molecular weight compound is measured by gel permeation chromatography (GPC) in terms of polyacrylic acid. If the weight average molecular weight of the water-soluble high molecular weight compound is less than 1,000, the degree of dents after grinding will be deteriorated; while the weight average molecular weight of more than 10,000,000 will increase the viscosity of the aqueous solution and become difficult to handle.

(2-8)濃度 (2-8) Concentration

研磨劑組合物中之水溶性高分子量化合物之濃度,以固體含量換算時,為0.0001質量%以上且3.0質量%以下,較佳為0.001質量%以上且2.0質量%以下,更佳為0.005質量%以上且1.0質量%以下。若水溶性高分子量化合物之濃度小於0.0001質量%,無法充分獲得添加水溶性高分子量化合物之效果,而濃度大於3.0質量%,則水溶性高分子量化合物之添加效果將達上限,故添加必需量以上之水溶性高分子量化合物,無經濟之效。 The concentration of the water-soluble high molecular weight compound in the abrasive composition, when converted to solid content, is 0.0001 mass% or more and 3.0 mass% or less, preferably 0.001 mass% or more and 2.0 mass% or less, more preferably 0.005 mass% Above and below 1.0% by mass. If the concentration of the water-soluble high-molecular-weight compound is less than 0.0001% by mass, the effect of adding the water-soluble high-molecular-weight compound cannot be sufficiently obtained, and if the concentration is greater than 3.0% by mass, the effect of the addition of the water-soluble high-molecular-weight compound will reach the upper limit, so the addition of more than the necessary amount Water-soluble high molecular weight compounds have no economic effect.

(3)有機硫酸酯鹽化合物 (3) Organic sulfate ester compound

在本發明之研磨劑組合物中,包含有機硫酸酯鹽化合物作為必需成分。作為有機硫酸酯鹽化合物,可包含以下第一種型態與第二種型態之任一種。 The abrasive composition of the present invention contains an organic sulfate ester salt compound as an essential component. As the organic sulfate ester salt compound, any one of the following first type and second type may be included.

(3-1)有機硫酸酯鹽化合物(第一種型態) (3-1) Organic sulfate salt compound (first type)

用於本發明之研磨劑組合物之有機硫酸酯鹽化合物之第一種型態,係以如下通式(1)所示之化合物。 The first type of organic sulfate salt compound used in the abrasive composition of the present invention is a compound represented by the following general formula (1).

R-O-SO3M (1)於式中,R表示碳數為5~21之直鏈或分支之烷基、烯基、烯丙基或烯丙烷基,M表示鹼金屬、鹼土族金屬、銨離子或有機陽離子。 RO-SO 3 M (1) In the formula, R represents a linear or branched alkyl, alkenyl, allyl or allyl alkyl group having 5 to 21 carbon atoms, and M represents an alkali metal, alkaline earth metal, ammonium Ion or organic cation.

上述通式(1)中,若R之碳數未滿5,對研磨而產生之研磨屑之分散去除能力與再附著防止能力有時會不足,若R之碳數超過21,有機硫酸酯鹽化合物本身在研磨劑組合物中之溶解性、分散穩定性就會下降,在研磨劑組合物使用過程中,溶解性、分散穩定性有時會下降。R之碳數較佳為8~14,更佳為10~14。 In the above general formula (1), if the carbon number of R is less than 5, the dispersing and removing ability and re-adhesion preventing ability of the grinding debris generated by polishing may sometimes be insufficient. If the carbon number of R exceeds 21, the organic sulfate ester salt The solubility and dispersion stability of the compound itself in the abrasive composition will decrease. During the use of the abrasive composition, the solubility and dispersion stability may sometimes decrease. The carbon number of R is preferably from 8 to 14, more preferably from 10 to 14.

R所示之烷基之具體範例包含戊基、己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、十四烷基、十五烷基、十六烷基、十八烷基、十九烷基、叔丁基、異辛基、異十二烷基等。此外,作為烯基之實例,可列舉油醯基等。此外,作為烯丙基之實例,可列舉苯基、聯苯基、萘基等。此外,作為烯丙烷基之實例,可列舉甲苯基、二甲苯基、辛苯酚基等。從氧化穩定性、分解穩定性等觀點而言,R較佳為烷基。 Specific examples of the alkyl group shown by R include pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecane Group, hexadecyl, octadecyl, nonadecyl, tert-butyl, isooctyl, isododecyl, etc. In addition, examples of alkenyl groups include oleoyl groups and the like. In addition, examples of allyl groups include phenyl, biphenyl, and naphthyl. In addition, examples of allyl groups include tolyl, xylyl, and octylphenol groups. From the viewpoint of oxidation stability and decomposition stability, R is preferably an alkyl group.

上述通式(1)中,M之實例包含鈉或鉀等鹼金屬、鈣或鎂等鹼土金屬、銨離子、四級銨離子或三乙醇胺等有機胺。 In the above general formula (1), examples of M include alkali metals such as sodium or potassium, alkaline earth metals such as calcium or magnesium, ammonium ions, quaternary ammonium ions, or organic amines such as triethanolamine.

上述通式(1)所示之有機硫酸酯鹽化合物之具體範例包含庚硫酸鹽、辛硫酸鹽、月桂硫酸鹽、高級醇(椰子油)硫酸鹽、硬脂硫酸鹽等,其中較佳為使用辛硫酸鹽、月桂硫酸鹽、硬脂硫酸鹽。上述通式(1)所示 之有機硫酸酯鹽化合物,於本發明之研磨劑組合物中,可單獨使用一種,或組合兩種以上使用。 Specific examples of the organic sulfate ester compound represented by the above general formula (1) include heptyl sulfate, octyl sulfate, lauryl sulfate, higher alcohol (coconut oil) sulfate, stearic sulfate, etc., among which preferably used Caprylic sulfate, laurel sulfate, stearate sulfate. Represented by the above general formula (1) The organic sulfate ester compound may be used alone or in combination of two or more in the abrasive composition of the present invention.

研磨劑組合物中之上述通式(1)所示之有機硫酸酯鹽化合物含量,通常為0.0001~2.0質量%,較佳為0.0005~1.0質量%。 The content of the organic sulfate ester salt compound represented by the general formula (1) in the abrasive composition is usually 0.0001 to 2.0% by mass, preferably 0.0005 to 1.0% by mass.

(3-2)有機硫酸酯鹽化合物(第二種型態) (3-2) Organic sulfate ester compound (second type)

用於本發明之研磨劑組合物之有機硫酸酯鹽化合物之第二種型態,係以如下通式(2)所示之化合物。 The second type of organic sulfate salt compound used in the abrasive composition of the present invention is a compound represented by the following general formula (2).

R-O-(AO)n-SO3M (2)於式中,R表示碳數為5~21之直鏈或分支之烷基、烯基、烯丙基或烯丙烷基,AO表示碳數為2或3之氧伸烷基,n表示1~30之自然數,M表示鹼金屬、鹼土族金屬、銨離子或有機陽離子。 RO-(AO)n-SO 3 M (2) In the formula, R represents a linear or branched alkyl, alkenyl, allyl or allyl alkyl group having 5 to 21 carbon atoms, and AO represents a carbon number of Oxyalkylene of 2 or 3, n represents a natural number from 1 to 30, M represents alkali metal, alkaline earth metal, ammonium ion or organic cation.

上述通式(2)所示之有機硫酸酯鹽化合物中,R係碳數為5~21之直鏈或分支之烷基、烯基、烯丙基或烯丙烷基。R之碳數較佳為8~14,更佳為10~14。此外,R較佳為烷基。 In the organic sulfate ester salt compound represented by the above general formula (2), R is a linear or branched alkyl group, alkenyl group, allyl group or allyl group having 5 to 21 carbon atoms. The carbon number of R is preferably from 8 to 14, more preferably from 10 to 14. In addition, R is preferably an alkyl group.

上述通式(2)中,AO係碳數為2或3之氧伸烷基。 In the above general formula (2), AO is an oxyalkylene group having 2 or 3 carbon atoms.

上述通式(2)中,n為1~30之自然數,較佳為2~4。 In the above general formula (2), n is a natural number of 1 to 30, preferably 2 to 4.

上述通式(2)中,M之實例包含鈉或鉀等鹼金屬、鈣或鎂等鹼土金屬、銨離子、四級銨離子或三乙醇胺等有機胺。 In the above general formula (2), examples of M include alkali metals such as sodium or potassium, alkaline earth metals such as calcium or magnesium, ammonium ions, quaternary ammonium ions, or organic amines such as triethanolamine.

作為上述通式(2)所示之有機硫酸酯鹽化合物,係使用眾所皆知之水溶性化合物作為陰離子界面活性劑。本發明中,上述通式(2)所示之有機硫酸酯鹽化合物係指,聚氧伸烷基醚硫酸酯鹽、聚氧伸烷基烯醚硫酸酯鹽、聚氧伸烷基芳基醚硫酸酯鹽及聚氧伸烷基烷芳基醚硫酸酯鹽 之任一種。 As the organic sulfate salt compound represented by the general formula (2), a well-known water-soluble compound is used as an anionic surfactant. In the present invention, the organic sulfate ester salt compound represented by the above general formula (2) refers to polyoxyalkylene ether sulfate salt, polyoxyalkylene ether ether sulfate salt, polyoxyalkylene aryl ether Sulfate salt and polyoxyalkylene alkyl aryl ether sulfate salt Any of them.

更具體而言,作為上述通式(2)所示之有機硫酸酯鹽化合物,可列舉聚氧乙烯十三醚硫酸鹽(每分子2個或3個聚氧乙烯基)、聚氧乙烯月桂醚硫酸鹽(每分子2個或3個聚氧乙烯基)、聚氧乙烯壬醚硫酸鹽(每分子3個聚氧乙烯基)、聚氧乙烯辛苯酚醚硫酸鹽(每分子3個聚氧乙烯基)、聚氧乙烯壬苯醚硫酸鹽(每分子3個聚氧乙烯基)等。其中,特佳為使用聚氧乙烯十三醚硫酸鹽(每分子3個聚氧乙烯基)、聚氧乙烯月桂醚硫酸鹽(每分子3個聚氧乙烯基)、聚氧乙烯辛苯酚醚硫酸鹽(每分子3個聚氧乙烯基)、聚氧乙烯壬苯醚硫酸鹽(每分子3個聚氧乙烯基)。 More specifically, examples of the organic sulfate ester compound represented by the above general formula (2) include polyoxyethylene tridecyl ether sulfate (2 or 3 polyoxyethylene groups per molecule), polyoxyethylene lauryl ether Sulfate (2 or 3 polyoxyethylene per molecule), polyoxyethylene nonyl ether sulfate (3 polyoxyethylene per molecule), polyoxyethylene octphenol ether sulfate (3 polyoxyethylene per molecule) Group), polyoxyethylene nonyl phenyl ether sulfate (3 polyoxyethylene groups per molecule), etc. Among them, the best is the use of polyoxyethylene tridecyl ether sulfate (3 polyoxyethylene per molecule), polyoxyethylene lauryl ether sulfate (3 polyoxyethylene per molecule), polyoxyethylene octyl phenol ether sulfate Salt (3 polyoxyethylene groups per molecule), polyoxyethylene nonoxyphenate sulfate (3 polyoxyethylene groups per molecule).

上述通式(2)所示之有機硫酸酯鹽化合物,於本發明之研磨劑組合物中,可單獨含有一種,或組合含有兩種以上。此外,亦可與上述通式(1)所示之有機硫酸酯鹽化合物組合使用。 The organic sulfate ester salt compound represented by the above general formula (2) may contain one kind alone or two or more kinds in combination in the abrasive composition of the present invention. In addition, it can also be used in combination with the organic sulfate ester salt compound represented by the general formula (1).

研磨劑組合物中之上述通式(2)所示之有機硫酸酯鹽化合物之含量,通常為0.0001~2.0質量%,較佳為0.0005~1.0質量%。 The content of the organic sulfate ester salt compound represented by the above general formula (2) in the abrasive composition is usually 0.0001 to 2.0% by mass, preferably 0.0005 to 1.0% by mass.

(4)酸及/或其鹽類 (4) Acids and/or their salts

在本發明中,可使用酸及/或其鹽類以調整pH值或做為一選擇性成分。所使用之酸及/或其鹽類的實例包含無機酸及/或其鹽類與有機酸及/或其鹽類。 In the present invention, acids and/or their salts can be used to adjust pH or as a selective component. Examples of the acid and/or its salt used include inorganic acid and/or its salt and organic acid and/or its salt.

無機酸及/或其鹽類的實例包含硝酸、硫酸、鹽酸、磷酸、膦酸、焦磷酸、三聚磷酸等無機酸及/或其鹽類。 Examples of inorganic acids and/or salts thereof include inorganic acids such as nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, phosphonic acid, pyrophosphoric acid, and tripolyphosphoric acid and/or their salts.

有機酸及/或其鹽類的實例包含穀胺酸或天冬胺酸等胺基羧 酸及/或其鹽類,以及檸檬酸、酒石酸、草酸、硝基醋酸、順丁烯二酸、蘋果酸、琥珀酸等羧酸及/或其鹽類,有機膦酸及/或其鹽類。此等酸及/或其鹽類可單獨使用一種,或組合兩種以上使用。 Examples of organic acids and/or salts thereof include amino carboxyl such as glutamic acid or aspartic acid Acids and/or their salts, and carboxylic acids and/or their salts such as citric acid, tartaric acid, oxalic acid, nitroacetic acid, maleic acid, malic acid and succinic acid, organic phosphonic acids and/or their salts . These acids and/or their salts can be used alone or in combination of two or more.

有機膦酸及/或其鹽類係為選自以下至少一種以上之化合物:2-胺基乙基膦酸、1-羥基亞乙基-1,1-二膦酸、胺基三(亞甲基膦酸)、乙二胺四(亞甲基膦酸)、二伸乙三胺五(亞甲基膦酸)、乙烷-1,1-二膦酸、乙烷-1,1,2-三膦酸、乙烷-1-羥基-1,1,2-三膦酸、乙烷-1,2-二羧基-1,2-二膦酸、甲烷羥基膦酸、2-膦醯丁烷-1,2-二羧酸、1-膦醯丁烷-2,3,4-三羧酸、α-甲基膦醯琥珀酸以及其鹽類。 Organic phosphonic acid and/or its salts are at least one compound selected from the group consisting of 2-aminoethylphosphonic acid, 1-hydroxyethylene-1,1-diphosphonic acid, and aminotri(methylene Phosphonic acid), ethylenediamine tetrakis (methylenephosphonic acid), diethylenetriamine penta (methylenephosphonic acid), ethane-1,1-diphosphonic acid, ethane-1,1,2 -Triphosphonic acid, ethane-1-hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methanehydroxyphosphonic acid, 2-phosphonobutane Alkane-1,2-dicarboxylic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid, α-methylphosphono succinic acid and salts thereof.

上述化合物以組合兩種以上使用,亦可為較佳之實施形態,具體實例包含硫酸及/或其鹽類與有機膦酸及/或其鹽類之組合、磷酸及/或其鹽類與有機膦酸及/或其鹽類之組合等。 The above compounds are used in combination of two or more types, and may also be a preferred embodiment. Specific examples include a combination of sulfuric acid and/or its salts and organic phosphonic acid and/or its salts, phosphoric acid and/or its salts and organic phosphine Combination of acids and/or their salts, etc.

(5)氧化劑 (5) Oxidizing agent

本發明中,可使用氧化劑做為研磨促進劑。所使用的氧化劑實例包含過氧化物、過錳酸或其鹽類、鉻酸或其鹽類、過氧酸或其鹽類、鹵氧酸或其鹽類、含氧酸或其鹽類,以及兩種以上此等氧化劑之混合物等。 In the present invention, an oxidizing agent can be used as a grinding accelerator. Examples of the oxidizing agent used include peroxide, permanganic acid or its salts, chromic acid or its salts, peroxyacid or its salts, oxyhalic acid or its salts, oxyacid or its salts, and A mixture of two or more of these oxidants.

具體實例包含過氧化氫、過氧化鈉、過氧化鋇、過氧化鉀、過錳酸鉀、鉻酸之金屬鹽、二鉻酸之金屬鹽、過硫酸、過硫酸鈉、過硫酸鉀、過硫酸銨、過氧磷酸、過氧硼酸鈉、過蟻酸、過醋酸、次亞氯酸、次亞氯酸鈉、次亞氯酸鈣等。其中較佳為過氧化氫、過硫酸及其鹽類、次亞氯酸及其鹽類等,更佳為過氧化氫。 Specific examples include hydrogen peroxide, sodium peroxide, barium peroxide, potassium peroxide, potassium permanganate, metal salts of chromic acid, metal salts of dichromic acid, persulfuric acid, sodium persulfate, potassium persulfate, persulfate Ammonium, peroxyphosphoric acid, sodium peroxyborate, perforic acid, peracetic acid, hypochlorous acid, sodium hypochlorite, calcium hypochlorite, etc. Among them, hydrogen peroxide, persulfuric acid and its salts, hypochlorous acid and its salts, etc. are preferred, and hydrogen peroxide is more preferred.

研磨劑組合物中之氧化劑含量較佳為0.01~10.0質量%。尤 佳為0.1~5.0質量%。 The content of the oxidizing agent in the abrasive composition is preferably 0.01 to 10.0% by mass. especially It is preferably 0.1 to 5.0% by mass.

2.研磨劑組合物之物理特性(pH) 2. Physical properties (pH) of the abrasive composition

本發明之研磨劑組合物,其pH值(25℃)範圍較佳為0.1~4.0,尤佳為0.5~3.0。藉由使研磨劑組合物之pH值(25℃)為0.1以上,可抑制表面粗糙度。藉由使研磨劑組合物之pH值(25℃)為4.0以下,可抑制研磨速度之低落。 The abrasive composition of the present invention preferably has a pH value (25°C) in the range of 0.1 to 4.0, particularly preferably 0.5 to 3.0. By setting the pH value (25° C.) of the abrasive composition to 0.1 or more, the surface roughness can be suppressed. By setting the pH value (25° C.) of the abrasive composition to 4.0 or less, it is possible to suppress a decrease in the polishing rate.

本發明之研磨劑組合物,可用於硬碟等所謂磁記錄媒體等各種電子組件之研磨。特別是,可適用於鋁製磁碟基板之研磨。更可適用於無電解鎳-磷電鍍之鋁製磁碟基板之研磨。無電解鎳-磷電鍍,一般於pH值(25℃)4.0~6.0之條件下實施電鍍。如為pH值(25℃)未滿4.0之電鍍條件,鎳傾向於溶解,電鍍將難以進行。另一方面,於研磨時,例如於pH值(25℃)未滿4.0之條件下,鎳傾向於溶解,唯可藉由使用本發明之研磨劑組合物,提高研磨速度。 The abrasive composition of the present invention can be used for polishing various electronic components such as hard disks and so-called magnetic recording media. In particular, it is suitable for polishing aluminum disk substrates. It is more suitable for the polishing of aluminum disk substrates made of electroless nickel-phosphorus plating. Electroless nickel-phosphorus electroplating is generally carried out under the conditions of pH value (25℃) 4.0~6.0. For electroplating conditions where the pH value (25°C) is less than 4.0, nickel tends to dissolve and electroplating will be difficult. On the other hand, during polishing, for example, under a pH value (25°C) of less than 4.0, nickel tends to dissolve, but the polishing rate can be increased by using the polishing composition of the present invention.

3.磁碟基板之研磨方法 3. Grinding method of disk substrate

本發明之研磨劑組合物適合用於鋁製磁碟基板與玻璃磁碟基板等磁碟基板之研磨。特別是適合用於無電解鎳-磷電鍍之鋁製磁碟基板(以下稱之為「鋁碟」)之研磨。 The abrasive composition of the present invention is suitable for polishing disk substrates such as aluminum disk substrates and glass disk substrates. Especially suitable for the polishing of electroless nickel-phosphorus plated aluminum magnetic disk substrates (hereinafter referred to as "aluminum disks").

作為本發明之研磨劑組合物可適用之研磨方法,例如,有將研磨墊貼附於研磨機之平板,同時於研磨對象(例如鋁碟)之研磨表面或研磨墊塗佈研磨劑組合物,以研磨墊摩擦研磨表面之方法(稱之為拋光)。例如,同時研磨鋁碟之正面與反面時,有使用雙面研磨機,以上平板及下平板各別貼附之研磨墊進行研磨之方法。該方法中,係將鋁碟夾入貼附於 上平板及下平板之研磨墊之間,並於研磨面與研磨墊之間塗佈研磨劑組合物,藉由兩個研磨墊同時旋轉之方式,研磨鋁碟之正面與反面。研磨墊可使用聚氨酯研磨墊、麂皮絨研磨墊、不織布研磨墊以及其他任意材質之研磨墊。 As a polishing method applicable to the abrasive composition of the present invention, for example, a polishing pad is attached to a flat plate of a polishing machine, and at the same time, an abrasive composition is applied to the polishing surface or polishing pad of an object to be polished, such as an aluminum dish, The method of rubbing the surface with a polishing pad (called polishing). For example, when grinding the front and back of an aluminum dish at the same time, there is a method of using a double-sided grinding machine to grind the polishing pads attached to the upper and lower plates, respectively. In this method, the aluminum disc is clipped and attached to The polishing composition is applied between the polishing pads of the upper and lower plates, and between the polishing surface and the polishing pads, and the front and back sides of the aluminum dish are polished by the simultaneous rotation of the two polishing pads. The polishing pad can use polyurethane polishing pad, suede polishing pad, non-woven cloth polishing pad and any other material polishing pad.

[實施例] [Example]

以下依據實施例對本發明進行具體說明,唯本發明並不限於該等實施例,在不脫離本發明之技術範圍內,皆可依照各種型態實施。 The present invention will be specifically described below based on embodiments, but the present invention is not limited to these embodiments, and can be implemented in various types without departing from the technical scope of the present invention.

研磨劑組合物之製備方法 Preparation method of abrasive composition

於實施例1至15及比較例1至9所使用之研磨劑組合物,係以表1所述之含量包含表1所述材料之研磨劑組合物。此外,各實施例與各比較例之研磨試驗結果如表2及表3所示。另,聚氧乙烯十三醚硫酸鈉,係第二種型態之有機硫酸酯鹽化合物;月桂硫酸鈉,係第一種型態之有機硫酸酯鹽化合物。此外,合成編號1~5,係以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物之水溶性高分子量化合物。合成編號6、7,係同元聚合物。此外,實施例11、12中,水溶性高分子量化合物係含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物。合成編號8,係以具羧酸基之單體與具磺酸基之單體及具醯胺基之單體為必需單體之共聚物之水溶性高分子量化合物。 The abrasive compositions used in Examples 1 to 15 and Comparative Examples 1 to 9 were the abrasive compositions containing the materials described in Table 1 at the contents described in Table 1. In addition, the polishing test results of each example and each comparative example are shown in Table 2 and Table 3. In addition, polyoxyethylene tridecyl ether sodium sulfate is the second type of organic sulfate ester compound; sodium lauryl sulfate is the first type of organic sulfate ester compound. In addition, Synthesis Nos. 1 to 5 are water-soluble high molecular weight compounds of copolymers in which monomers having carboxylic acid groups and monomers having sulfonic acid groups are essential monomers. Synthetic numbers 6, 7 are homopolymers. In addition, in Examples 11 and 12, the water-soluble high molecular weight compound is a mixture containing a polymer having a monomer having a carboxylic acid group as an essential monomer and a polymer having a monomer having a sulfonic acid group as an essential monomer. Synthetic number 8 is a water-soluble high molecular weight compound of a copolymer in which a monomer having a carboxylic acid group, a monomer having a sulfonic acid group and a monomer having an amide group are essential monomers.

Figure 108127247-A0202-12-0019-1
Figure 108127247-A0202-12-0019-1
Figure 108127247-A0202-12-0020-8
Figure 108127247-A0202-12-0020-8

AA:丙烯酸 AA: Acrylic

ATBS:2-丙烯醯胺-2-甲基丙磺酸 ATBS: 2-Acrylamido-2-methylpropanesulfonic acid

TBAA:叔丁基丙烯醯胺 TBAA: tert-butyl acrylamide

平均粒徑 The average particle size

氧化鋁粒子之平均粒徑,係使用雷射繞射式粒度分佈測定裝置(Shimadzu Corporation製造,SALD2200)進行測定。氧化鋁粒子之平均粒徑係以體積為基準時,自小粒徑開始之累積粒徑分佈為50%時所對應之平均粒徑(D50)。 The average particle size of the alumina particles was measured using a laser diffraction particle size distribution measuring device (manufactured by Shimadzu Corporation, SALD 2200). The average particle size of alumina particles is the average particle size (D50) when the cumulative particle size distribution from the small particle size is 50% based on the volume.

重量平均分子量 Weight average molecular weight

水溶性高分子量化合物之重量平均分子量,係藉由凝膠滲透層析術(GPC)經聚丙烯酸換算進行測定,GPC測定條件如下所示。 The weight average molecular weight of the water-soluble high molecular weight compound is measured by gel permeation chromatography (GPC) in terms of polyacrylic acid. The GPC measurement conditions are shown below.

GPC條件 GPC conditions

管柱:G4000PWXL(東曹株式會社製)+G2500PWXL(東曹株式會社製) Column: G4000PWXL (manufactured by Tosoh Corporation) + G2500PWXL (manufactured by Tosoh Corporation)

溶析液:0.2M磷酸鹽緩衝劑/乙腈=9/1(容量比) Eluent: 0.2M phosphate buffer/acetonitrile = 9/1 (capacity ratio)

流速:1.0mL/min Flow rate: 1.0mL/min

溫度:40℃ Temperature: 40℃

偵測:210nm(UV) Detection: 210nm (UV)

樣本:濃度5mg/mL(注入量100μL) Sample: concentration 5mg/mL (injection volume 100μL)

標準曲線用聚合物:聚丙烯酸 分子量(波峰分子量:Mp)11.5萬、2.8萬、4100、1250(創和科學(株)、American Polymer Standards Corp.) Standard curve polymer: Polyacrylic acid Molecular weight (peak molecular weight: Mp) 115,000, 28,000, 4100, 1250 (Chuanghe Science Co., Ltd., American Polymer Standards Corp.)

研磨條件 Grinding conditions

以無電解鎳-磷電鍍之外徑為95mm之鋁碟作為研磨對象之基板,並以下列研磨條件實施研磨。 An aluminum dish with an outer diameter of 95 mm electroless nickel-phosphorus plating was used as the substrate for polishing, and the polishing was performed under the following polishing conditions.

研磨機:SpeedFam Company Ltd.製造之9B雙面研磨機 Grinding machine: 9B double-sided grinding machine manufactured by SpeedFam Company Ltd.

研磨墊:FILWEL CO.,LTD.製造之P1墊 Grinding pad: P1 pad manufactured by FILWEL CO.,LTD.

平板旋轉數:上平板 -7.5min-1 Rotation number of flat plate: upper plate-7.5min- 1

下平板 22.5min-1 Lower plate 22.5min- 1

研磨劑組合物供給量:100ml/min Supply amount of abrasive composition: 100ml/min

研磨時間:4.5分鐘 Grinding time: 4.5 minutes

加工壓力:100g/cm2 Processing pressure: 100g/cm 2

以上述研磨條件實施研磨試驗之結果,如表2、表3所示。 The results of the polishing test under the above polishing conditions are shown in Table 2 and Table 3.

研磨速度比 Grinding speed ratio

研磨速度,係測定研磨後減少之鋁碟質量,再依據下列數式所算出之值。 The grinding speed is the value of the aluminum disc that is reduced after grinding, and then calculated according to the following formula.

研磨速度(μm/min)=鋁碟質量減少量(g)/研磨時間(min)/鋁碟單面面積(cm2)/無電解鎳-磷電鍍皮膜密度(g/cm3)/2×104 Grinding speed (μm/min)=Aluminum disc mass reduction (g)/grinding time (min)/aluminum disc single-sided area (cm 2 )/electroless nickel-phosphorus plating density (g/cm 3 )/2× 10 4

(然而,上述式中,鋁碟單面面積為65.9cm2,無電解鎳-磷電鍍皮膜密度為8.0g/cm3) (However, in the above formula, the single-sided area of the aluminum dish is 65.9 cm 2 , and the density of the electroless nickel-phosphorus plating film is 8.0 g/cm 3 )

研磨速度比係以上述數式求得之比較例1之研磨速度為1(基準)時之相對值,比較例1之實測值為0.354μm/min。 The polishing rate ratio is a relative value obtained when the polishing rate of Comparative Example 1 is 1 (reference) obtained by the above formula, and the actual measured value of Comparative Example 1 is 0.354 μm/min.

凹陷 Depression

鋁碟之凹陷係使用Ametek Co.,Ltd製造之掃描式白光涉三次元表面結構分析顯微鏡進行測定。測定條件係使用Ametek Co.,Ltd製造之測定裝置(New View 8300(鏡頭:1.4倍、放大倍率:1.0倍),波長為500~1000μm,測定範圍為6mm×6mm,並使用Ametek Co.,Ltd製造之分析軟體(Mx)進 行分析。另,表2、表3所示數值,係以比較例1之凹陷程度為1(基準)時之相對值。比較例1之實測值為1.9Å。 The depressions of the aluminum dish were measured using a scanning white light three-dimensional surface structure analysis microscope manufactured by Ametek Co., Ltd. The measurement conditions used a measurement device (New View 8300 (lens: 1.4 times, magnification: 1.0 times) manufactured by Ametek Co., Ltd., with a wavelength of 500 to 1000 μm, a measurement range of 6 mm×6 mm, and Ametek Co., Ltd. Manufacturing analysis software (Mx) 行分析。 Line analysis. In addition, the numerical values shown in Table 2 and Table 3 are relative values when the degree of depression of Comparative Example 1 is 1 (reference). The measured value of Comparative Example 1 was 1.9Å.

滾降比 Roll-off ratio

作為端面形狀之評價,測定以數值化呈現滾降程度之外圍下垂程度。滾降係使用Ametek Co.,Ltd製造之測定裝置New View 8300(鏡頭:1.4倍、放大倍率:1.0倍)與Ametek Co.,Ltd製造之分析軟體(Mx)進行測定。 As an evaluation of the shape of the end face, the degree of sagging of the periphery showing the degree of roll-off numerically was measured. The roll-off was measured using a measurement device New View 8300 (lens: 1.4 times, magnification: 1.0 times) manufactured by Ametek Co., Ltd and analysis software (Mx) manufactured by Ametek Co., Ltd.

關於滾降之測定方法,以圖1說明。圖1係表示研磨目標物即外徑95mm之無電解鎳-磷電鍍鋁碟,其通過碟片中心至研磨表面為止之垂直斷面圖。於測定滾降時,首先沿碟片外周端設置垂線H,自垂線H向研磨表面上之碟片中心方向設置平行於垂線H且與垂線H之距離為3.90mm之線j,並以碟片之斷面線與線j交會處為點A。另外,於平行於垂線H且與垂線H之距離為0.30mm處設置線k,並以碟片之斷面線與線k交會處為點B。設置連接點A與點B之線m,再設置垂直於線m之線t,並以碟片之斷面線與線t交會處為點C、線m與線t交會處為點D。接著,測定點C-D間之最大距離,並以此距離作為滾降。 The measurement method of roll-off will be described with reference to FIG. 1. FIG. 1 is a vertical cross-sectional view of an electroless nickel-phosphorus electroplated aluminum dish with an outer diameter of 95 mm, which passes through the center of the dish to the grinding surface. When measuring roll-off, first set a vertical line H along the outer peripheral end of the disc. From the vertical line H to the center of the disc on the grinding surface, set a line j parallel to the vertical line H and the distance from the vertical line H to 3.90 mm. The intersection of the cross-sectional line and the line j is point A. In addition, a line k is provided at a distance parallel to the vertical line H and a distance of 0.30 mm from the vertical line H, and the point where the cross-section line of the disc intersects the line k is the point B. Set the line m connecting point A and point B, then set the line t perpendicular to line m, and take the intersection of the cross-section line of the disc and line t as point C, and the intersection of line m and line t as point D. Next, measure the maximum distance between points C-D and use this distance as the roll-off.

滾降比係以上述方法測定之比較例1之滾降比為1(基準)時之相對值。比較例1之實測值為913Å。 The roll-off ratio is a relative value when the roll-off ratio of Comparative Example 1 measured by the above method is 1 (reference). The measured value of Comparative Example 1 is 913Å.

Figure 108127247-A0202-12-0024-4
Figure 108127247-A0202-12-0024-4
Figure 108127247-A0202-12-0025-9
Figure 108127247-A0202-12-0025-9

AA:丙烯酸 AA: Acrylic

ATBS:2-丙烯醯胺-2-甲基丙磺酸 ATBS: 2-Acrylamido-2-methylpropanesulfonic acid

TBAA:叔丁基丙烯醯胺 TBAA: tert-butyl acrylamide

330T:聚氧乙烯十三烷基醚硫酸鈉 330T: sodium polyoxyethylene tridecyl ether sulfate

LS-30:月桂硫酸鈉 LS-30: sodium laurel sulfate

於所有實施例與比較例,添加過氧化氫:0.6質量%、硫酸:1.1質量%(使pH=1.2之添加量) In all examples and comparative examples, hydrogen peroxide: 0.6% by mass, sulfuric acid: 1.1% by mass (addition amount for pH=1.2)

Figure 108127247-A0202-12-0026-6
Figure 108127247-A0202-12-0026-6

AA:丙烯酸 AA: Acrylic

ATBS:2-丙烯醯胺-2-甲基丙磺酸 ATBS: 2-Acrylamido-2-methylpropanesulfonic acid

TBAA:叔丁基丙烯醯胺 TBAA: tert-butyl acrylamide

330T:聚氧乙烯十三烷基醚硫酸鈉 330T: sodium polyoxyethylene tridecyl ether sulfate

LS-30:月桂硫酸鈉 LS-30: sodium laurel sulfate

於所有實施例與比較例,添加過氧化氫:0.6質量%、硫酸:1.1質量%(使pH=1.2之添加量) In all examples and comparative examples, hydrogen peroxide: 0.6% by mass, sulfuric acid: 1.1% by mass (addition amount for pH=1.2)

結論 in conclusion

實施例1係相對於比較例1,添加了有機硫酸酯鹽化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。此外,實施例1係相對於比較例2,添加了水溶性高分子量化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。接著,實施例1係相對於比較例3,使用共聚物代替同元聚合物作為水溶性高分子量化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。實施例2,係改變實施例1之水溶性高分子量化合物之分子量之實驗。 Example 1 is an experiment in which an organic sulfate ester compound is added to Comparative Example 1, in which the polishing speed, dents, and roll-off are all improved. In addition, Example 1 is an experiment in which a water-soluble high-molecular-weight compound is added to Comparative Example 2, in which the polishing speed, dents, and roll-off are all improved. Next, Example 1 is an experiment in which a copolymer is used instead of a homopolymer as a water-soluble high-molecular-weight compound, as compared with Comparative Example 3. The polishing speed, dents, and roll-off are all improved. Example 2 is an experiment to change the molecular weight of the water-soluble high molecular weight compound of Example 1.

實施例3係相對於比較例1,添加有機硫酸酯鹽化合物之實驗,其中研磨速度相等,但凹陷與滾降皆有改善。此外,實施例3係相對於比較例4,添加水溶性高分子量化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。接著,實施例3係相對於比較例5,使用共聚物代替同元聚合物作為水溶性高分子量化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。實施例4,係改變實施例3之水溶性高分子量化合物之分子量之實驗。 Example 3 is an experiment of adding an organic sulfate ester compound to Comparative Example 1, in which the grinding speed is equal, but both the dent and roll-off are improved. In addition, Example 3 is an experiment in which a water-soluble high-molecular-weight compound is added to Comparative Example 4, in which the polishing speed, dents, and roll-off are all improved. Next, Example 3 is an experiment using a copolymer instead of a homopolymer as a water-soluble high molecular weight compound, as compared to Comparative Example 5, in which the polishing speed, dents, and roll-off are all improved. Example 4 is an experiment to change the molecular weight of the water-soluble high molecular weight compound of Example 3.

實施例5係相對於比較例6,添加有機硫酸酯鹽化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。實施例6,係改變實施例5之水溶性高分子量化合物之分子量之實驗。 Example 5 is an experiment in which an organic sulfate ester compound is added to Comparative Example 6, in which the grinding speed, dents, and roll-off are all improved. Example 6 is an experiment to change the molecular weight of the water-soluble high molecular weight compound of Example 5.

實施例7係相對於比較例6,添加有機硫酸酯鹽化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。實施例8,係改變實施例7之水溶性高分子量化合物之分子量之實驗。 Example 7 is an experiment in which an organic sulfate ester salt compound is added to Comparative Example 6, in which the grinding speed, dents, and roll-off are all improved. Example 8 is an experiment to change the molecular weight of the water-soluble high molecular weight compound of Example 7.

實施例9係相對於比較例7,使用共聚物代替同元聚合物作為水溶性高分子量化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。 實施例10係相對於比較例8,使用共聚物代替同元聚合物作為水溶性高分子量化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。 Example 9 is an experiment using a copolymer instead of a homopolymer as a water-soluble high molecular weight compound, as compared to Comparative Example 7, in which the polishing speed, dents, and roll-off are all improved. Example 10 is an experiment in which a copolymer is used instead of a homopolymer as a water-soluble high-molecular-weight compound, as compared with Comparative Example 8, in which the polishing speed, dents, and roll-off are all improved.

相對於比較例3僅使用AA(丙烯酸)同元聚合物作為水溶性高分子量化合物之實驗,實施例11係使用AA同元聚合物與ATBS(2-丙烯醯胺-2-甲基丙磺酸)同元聚合物之混合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。此外,比較例7係僅使用ATBS同元聚合物之實驗,與此相對,實施例11之研磨速度、凹陷及滾降等皆有改善。 Compared with Comparative Example 3, an experiment using only AA (acrylic acid) homopolymer as a water-soluble high molecular weight compound, Example 11 uses an AA homopolymer and ATBS (2-acrylamide-2-methylpropanesulfonic acid ) Experiments on mixtures of homopolymers, in which the grinding speed, dents and roll-off are all improved. In addition, Comparative Example 7 is an experiment using only ATBS homopolymer. In contrast, the polishing speed, dents, and roll-off of Example 11 are improved.

相對於比較例5僅使用AA同元聚合物之實驗,實施例12係使用AA同元聚合物與ATBS同元聚合物之混合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。此外,比較例8係僅使用ATBS同元聚合物之實驗,與此相對,實施例12之研磨速度、凹陷及滾降等亦皆有改善。 Compared with the experiment of using only AA homopolymers in Comparative Example 5, Example 12 is an experiment using a mixture of AA homopolymers and ATBS homopolymers, in which the grinding speed, dents, and roll-off are all improved. In addition, Comparative Example 8 is an experiment using only the ATBS homopolymer. In contrast, the polishing speed, dents, and roll-off of Example 12 are also improved.

實施例13係相對於比較例9,添加有機硫酸酯鹽化合物之實驗,其中研磨速度、凹陷及滾降等皆有改善。 Example 13 is an experiment in which an organic sulfate ester salt compound is added to Comparative Example 9, in which the grinding speed, dents, and roll-off are all improved.

實施例14係改變用於實施例1之水溶性高分子量化合物之組成,並使用由三種單體成分所構成之共聚物之實驗。 Example 14 is an experiment in which the composition of the water-soluble high molecular weight compound used in Example 1 is changed, and a copolymer composed of three monomer components is used.

實施例15係改變用於實施例3之水溶性高分子量化合物之組成,並使用由三種單體成分所構成之共聚物之實驗。 Example 15 is an experiment in which the composition of the water-soluble high molecular weight compound used in Example 3 is changed, and a copolymer composed of three monomer components is used.

從以上結果可明顯得知,可藉由使用本發明之研磨劑組合物,使研磨速度、凹陷、滾降現象等方面皆獲改善。根據本發明,可在維持研磨速度之同時,減少基板表面之凹陷程度並減少滾降現象。 From the above results, it is obvious that by using the abrasive composition of the present invention, the polishing speed, pitting, and roll-off phenomenon can be improved. According to the present invention, while maintaining the polishing speed, the degree of depression of the substrate surface can be reduced and the roll-off phenomenon can be reduced.

[產業上之可用性] [Industry availability]

本發明之研磨劑組合物,可用於半導體、硬碟等所謂磁記錄 媒體等各種電子組件之研磨。特別是,可用於玻璃磁碟基板與鋁製磁碟基板等之磁記錄媒體用基板之表面研磨。並且,可用於鋁合金製之基板表面形成無電解鎳-磷電鍍皮膜之磁記錄媒體用鋁製磁碟基板之表面研磨。 The abrasive composition of the present invention can be used for so-called magnetic recording of semiconductors, hard disks, etc. Grinding of various electronic components such as media. In particular, it can be used to polish the surface of substrates for magnetic recording media such as glass disk substrates and aluminum disk substrates. In addition, it can be used to polish the surface of an aluminum disk substrate for magnetic recording media where an electroless nickel-phosphorus plating film is formed on the surface of an aluminum alloy substrate.

A、B、C、D‧‧‧點 A, B, C, D ‧‧‧ points

h‧‧‧垂線 h‧‧‧Vertical

j、k、m、t‧‧‧線 j, k, m, t ‧‧‧ line

Claims (11)

一種磁碟基板用研磨劑組合物,其包含:氧化鋁粒子;水溶性高分子量化合物;有機硫酸酯鹽化合物;以及水,其中該水溶性高分子量化合物係一種包含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,及/或以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物,而該有機硫酸酯鹽化合物如下通式(1)所示R-O-SO3M (1)於式中,R表示碳數為5~21之直鏈或分支之烷基、烯基、烯丙基或烯丙烷基,M表示鹼金屬、鹼土族金屬、銨離子或有機陽離子。 An abrasive composition for a magnetic disk substrate, comprising: alumina particles; a water-soluble high molecular weight compound; an organic sulfate ester compound; and water, wherein the water-soluble high molecular weight compound is a monomer containing a carboxylic acid group Mixture of polymers with essential monomers and polymers with monomers with sulfonic acid groups as essential monomers, and/or with monomers with carboxylic acid groups and monomers with sulfonic acid groups as essential monomers Copolymer, and the organic sulfate ester compound is represented by the following general formula (1) RO-SO 3 M (1) In the formula, R represents a linear or branched alkyl group, alkenyl group having 5 to 21 carbon atoms, Allyl or allyl, M represents alkali metal, alkaline earth metal, ammonium ion or organic cation. 一種磁碟基板用研磨劑組合物,其包含:氧化鋁粒子;水溶性高分子量化合物;有機硫酸酯鹽化合物;以及水;其中該水溶性高分子量化合物係一種包含以具羧酸基之單體為必需單體之聚合物與以具磺酸基之單體為必需單體之聚合物之混合物,及/或以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物,而該有機硫酸酯鹽化合物如下通式(2)所示 R-O-(AO)n-SO3M (2)於式中,R表示碳數為5~21之直鏈或分支之烷基、烯基、烯丙基或烯丙烷基,AO表示碳數為2或3之氧伸烷基,n表示1~30之自然數,M表示鹼金屬、鹼土族金屬、銨離子或有機陽離子。 An abrasive composition for a magnetic disk substrate, comprising: alumina particles; a water-soluble high molecular weight compound; an organic sulfate ester compound; and water; wherein the water-soluble high molecular weight compound is a monomer containing a carboxylic acid group Mixture of polymers with essential monomers and polymers with monomers with sulfonic acid groups as essential monomers, and/or with monomers with carboxylic acid groups and monomers with sulfonic acid groups as essential monomers Copolymer, and the organic sulfate ester salt compound is represented by the following general formula (2) RO-(AO) n -SO 3 M (2) In the formula, R represents a linear or branched alkane with a carbon number of 5 to 21 Group, alkenyl, allyl or allyl group, AO represents an oxyalkylene group with a carbon number of 2 or 3, n represents a natural number from 1 to 30, M represents an alkali metal, alkaline earth metal, ammonium ion or organic cation . 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,其中該水溶性高分子量化合物即以具羧酸基之單體及具磺酸基之單體為必需單體之共聚物,係一種以具羧酸基之單體與具磺酸基之單體及具醯胺基之單體為必需單體之共聚物。 The abrasive composition for a magnetic disk substrate as described in item 1 or 2 of the patent application scope, wherein the water-soluble high molecular weight compound uses monomers having a carboxylic acid group and monomers having a sulfonic acid group as essential monomers The copolymer is a copolymer in which a monomer having a carboxylic acid group, a monomer having a sulfonic acid group and a monomer having an amide group are essential monomers. 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,其中該氧化鋁粒子含α-氧化鋁,且平均粒徑為0.1~2.0μm,且於該組合物中之濃度為1~50質量%。 The abrasive composition for a magnetic disk substrate as described in item 1 or 2 of the patent application range, wherein the alumina particles contain α-alumina and the average particle diameter is 0.1-2.0 μm, and the The concentration is 1-50% by mass. 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,其中該具羧酸基之單體係選自丙烯酸或其鹽類、甲基丙烯酸或其鹽類之單體。 The abrasive composition for a magnetic disk substrate as described in item 1 or 2 of the patent application scope, wherein the single system having a carboxylic acid group is selected from monomers of acrylic acid or its salts, methacrylic acid or its salts . 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,其中該具磺酸基之單體係選自異戊二烯磺酸、2-丙烯醯胺-2-甲基丙磺酸、2-甲基丙烯醯胺-2-甲基丙磺酸、苯乙烯磺酸、乙烯磺酸、丙烯磺酸、異戊烯磺酸、乙烯萘磺酸以及其鹽類之一種或兩種以上之單體。 The abrasive composition for a magnetic disk substrate as described in item 1 or 2 of the patent application range, wherein the single system with a sulfonic acid group is selected from isoprenesulfonic acid, 2-propenamide-2-methyl Propylsulfonic acid, 2-methacrylamide-2-methylpropanesulfonic acid, styrenesulfonic acid, ethylenesulfonic acid, propylenesulfonic acid, isopentenylsulfonic acid, ethylene naphthalenesulfonic acid and one of its salts Or more than two monomers. 如申請專利範圍第3項所述之磁碟基板用研磨劑組合物,其中該具醯胺基之單體係選自丙烯醯胺、甲基丙烯醯胺、N-烷基丙烯醯胺、N-烷基甲基丙烯醯胺之單體。 The abrasive composition for a magnetic disk substrate as described in item 3 of the patent application range, wherein the single system with an amide group is selected from acrylamide, methacrylamide, N-alkylacrylamide, N -Alkyl methacrylamide monomer. 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,其中以該具羧酸基之單體為必需單體之聚合物、以該具磺酸基之單體為必需單 體之聚合物、以該具羧酸基之單體及具磺酸基之單體為必需單體之共聚物及以該具羧酸基之單體與具磺酸基之單體及具醯胺基之單體為必需單體之共聚物之重量平均分子量各為1,000以上且1,000,000以下。 The abrasive composition for a magnetic disk substrate as described in item 1 or 2 of the patent application scope, wherein the polymer having the monomer having a carboxylic acid group as an essential monomer, and the monomer having a sulfonic acid group are Mandatory Polymers, copolymers in which the monomer having a carboxylic acid group and a monomer having a sulfonic acid group are essential monomers, and the monomer having a carboxylic acid group and a monomer having a sulfonic acid group The amine-based monomers are copolymers of essential monomers each having a weight average molecular weight of 1,000 or more and 1,000,000 or less. 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,其中該研磨劑組合物更含有酸及/或其鹽類,且pH值(25℃)範圍為0.1至4.0。 The abrasive composition for a magnetic disk substrate as described in item 1 or 2 of the patent application range, wherein the abrasive composition further contains an acid and/or its salts, and the pH value (25°C) ranges from 0.1 to 4.0 . 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,其中該研磨劑組合物更含有氧化劑。 The abrasive composition for a magnetic disk substrate as described in item 1 or 2 of the patent application range, wherein the abrasive composition further contains an oxidizing agent. 如申請專利範圍第1或第2項所述之磁碟基板用研磨劑組合物,用於研磨無電解鎳-磷電鍍之鋁製磁碟基板。 The abrasive composition for a magnetic disk substrate as described in item 1 or 2 of the patent application scope is used for polishing an electroless nickel-phosphorus plated aluminum magnetic disk substrate.
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