TWI806169B - Bootstrapped switch - Google Patents

Bootstrapped switch Download PDF

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TWI806169B
TWI806169B TW110135349A TW110135349A TWI806169B TW I806169 B TWI806169 B TW I806169B TW 110135349 A TW110135349 A TW 110135349A TW 110135349 A TW110135349 A TW 110135349A TW I806169 B TWI806169 B TW I806169B
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switch
terminal
transistor
capacitor
coupled
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TW110135349A
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TW202315329A (en
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黃詩雄
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瑞昱半導體股份有限公司
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Abstract

A bootstrapped switch is provided. The bootstrapped switch includes a first transistor, a second transistor, a first capacitor, three switches, and a switch circuit. The switch circuit includes a first switch, a second switch, a second capacitor, and an inverter circuit. The first transistor receives the input voltage and outputs the output voltage. The first terminal of the second transistor receives the input voltage, and the second terminal of the second transistor is coupled to the first terminal of the first capacitor. The control terminal of the first switch receives a clock. The first switch is coupled between a node and a reference voltage. The second switch is coupled between the control terminal of the first transistor and the node. The input terminal of the inverter circuit is coupled to the control terminal of the first switch. The second capacitor is coupled between the node and the output terminal of the inverter circuit.

Description

靴帶式開關bootstrap switch

本案是關於靴帶式開關(bootstrapped switch),尤其是關於快速導通與快速關閉的靴帶式開關。This case is about bootstrapped switches, especially bootstrapped switches with fast turn-on and fast turn-off.

圖1為習知的靴帶式開關的電路圖。靴帶式開關10包含開關101、開關102、開關103、開關104、開關105、N型金氧半場效電晶體(metal-oxide-semiconductor field-effect transistor, MOSFET)(以下簡稱NMOS電晶體)106以及抬舉電容(bootstrap capacitor)107。靴帶式開關10的輸入端VI及輸出端VO分別耦接NMOS電晶體106的源極(source)與汲極(drain)。NMOS電晶體106的閘極(gate)一方面透過開關105耦接至電壓源V3,另一方面透過開關104耦接至抬舉電容107的其中一端及開關101的其中一端。開關101的另一端耦接電壓源V1。抬舉電容107的另一端透過開關102耦接至電壓源V2,以及透過開關103耦接至NMOS電晶體106的源極與靴帶式開關10的輸入端VI。電壓源V1為高電壓準位VDD,而電壓源V2及電壓源V3則為接地準位。靴帶式開關10的操作為本技術領域具有通常知識者所熟知,故不再贅述。FIG. 1 is a circuit diagram of a conventional bootstrap switch. The bootstrap switch 10 includes a switch 101 , a switch 102 , a switch 103 , a switch 104 , a switch 105 , and an N-type metal-oxide-semiconductor field-effect transistor (MOSFET) (hereinafter referred to as NMOS transistor) 106 and a bootstrap capacitor 107 . The input terminal VI and the output terminal VO of the bootstrap switch 10 are respectively coupled to the source and drain of the NMOS transistor 106 . The gate of the NMOS transistor 106 is coupled to the voltage source V3 through the switch 105 on the one hand, and is coupled to one end of the boost capacitor 107 and one end of the switch 101 through the switch 104 on the other hand. The other end of the switch 101 is coupled to the voltage source V1. The other end of the boost capacitor 107 is coupled to the voltage source V2 through the switch 102 , and coupled to the source of the NMOS transistor 106 and the input terminal VI of the bootstrap switch 10 through the switch 103 . The voltage source V1 is a high voltage level VDD, and the voltage source V2 and the voltage source V3 are ground level. The operation of the bootstrap switch 10 is well known to those skilled in the art, so details will not be repeated here.

開關105的狀態(導通或不導通)決定NMOS電晶體106的狀態(導通或不導通)。換言之,開關105的反應時間愈短(即,使NMOS電晶體106的閘極愈快到達目標電壓),NMOS電晶體106的狀態愈能夠與系統時脈一致,使得靴帶式開關10的表現更佳(例如,速度更快、取樣的結果更準確)。換言之,開關105的設計在靴帶式開關10扮演重要的角色。The state of the switch 105 (conducting or not conducting) determines the state of the NMOS transistor 106 (conducting or not conducting). In other words, the shorter the response time of the switch 105 (that is, the faster the gate of the NMOS transistor 106 reaches the target voltage), the more the state of the NMOS transistor 106 can be consistent with the system clock, so that the performance of the bootstrap switch 10 is better. Better (for example, faster, more accurate results for sampling). In other words, the design of the switch 105 plays an important role in the bootstrap switch 10 .

鑑於先前技術之不足,本發明之一目的在於提供一種靴帶式開關以改善先前技術的不足。In view of the deficiencies of the prior art, an object of the present invention is to provide a bootstrap switch to improve the deficiencies of the prior art.

本發明之一實施例提供一種靴帶式開關,用來接收一輸入電壓並且輸出一輸出電壓,包含:一第一電晶體、一第一電容、一第二電晶體、一第一開關、一第二開關、一第三開關、一第四開關、一第五開關、一反相器電路以及一第二電容。第一電晶體具有一第一端、一第二端及一第一控制端,其中,該第一電晶體由該第一端接收該輸入電壓,且由該第二端輸出該輸出電壓。第一電容具有一第三端及一第四端;第二電晶體具有一第五端、一第六端及一第二控制端,其中,該第二電晶體由該第五端接收該輸入電壓,該第六端電連接該第一電容的該第三端,且該第二控制端電連接該第一電晶體的該第一控制端。第一開關耦接於該第一電容的該第三端與一第一參考電壓之間。第二開關耦接於該第一電容的該第四端與一第二參考電壓之間。第三開關耦接於該第一電容的該第四端與該第一電晶體的該第一控制端之間。第四開關耦接於該第一電晶體的該第一控制端與一節點之間。第五開關具有一第三控制端且耦接於該節點與該第一參考電壓之間。反相器電路具有一輸入端及一輸出端,其中,該輸入端耦接該第五開關之該第三控制端,且該反相器電路用來反相該第三控制端之一電壓。第二電容具有一第七端及一第八端,其中,該第七端耦接該反相器電路之該輸出端,且該第八端耦接該節點。One embodiment of the present invention provides a bootstrap switch for receiving an input voltage and outputting an output voltage, comprising: a first transistor, a first capacitor, a second transistor, a first switch, a The second switch, a third switch, a fourth switch, a fifth switch, an inverter circuit and a second capacitor. The first transistor has a first terminal, a second terminal and a first control terminal, wherein the first transistor receives the input voltage from the first terminal and outputs the output voltage from the second terminal. The first capacitor has a third terminal and a fourth terminal; the second transistor has a fifth terminal, a sixth terminal and a second control terminal, wherein the second transistor receives the input from the fifth terminal voltage, the sixth end is electrically connected to the third end of the first capacitor, and the second control end is electrically connected to the first control end of the first transistor. The first switch is coupled between the third terminal of the first capacitor and a first reference voltage. The second switch is coupled between the fourth terminal of the first capacitor and a second reference voltage. The third switch is coupled between the fourth end of the first capacitor and the first control end of the first transistor. The fourth switch is coupled between the first control terminal of the first transistor and a node. The fifth switch has a third control terminal and is coupled between the node and the first reference voltage. The inverter circuit has an input terminal and an output terminal, wherein the input terminal is coupled to the third control terminal of the fifth switch, and the inverter circuit is used for inverting a voltage of the third control terminal. The second capacitor has a seventh terminal and an eighth terminal, wherein the seventh terminal is coupled to the output terminal of the inverter circuit, and the eighth terminal is coupled to the node.

本發明之靴帶式開關能夠快速導通及/或快速關閉。相較於傳統技術,本發明之靴帶式開關能夠操作在更高速。The bootstrap switch of the present invention is capable of fast turn-on and/or fast turn-off. Compared with the conventional technology, the bootstrap switch of the present invention can operate at a higher speed.

有關本發明的特徵、實作與功效,茲配合圖式作實施例詳細說明如下。The characteristics, implementation and effects of the present invention are described in detail as follows with reference to the drawings.

以下說明內容之技術用語係參照本技術領域之習慣用語,如本說明書對部分用語有加以說明或定義,該部分用語之解釋係以本說明書之說明或定義為準。The technical terms in the following explanations refer to the customary terms in this technical field. If some terms are explained or defined in this specification, the explanations of these terms shall be based on the descriptions or definitions in this specification.

本發明之揭露內容包含靴帶式開關。由於本發明之靴帶式開關所包含之部分元件單獨而言可能為已知元件,因此在不影響該裝置發明之充分揭露及可實施性的前提下,以下說明對於已知元件的細節將予以節略。The present disclosure includes bootstrap switches. Since some of the components included in the bootstrap switch of the present invention may be known components individually, the details of the known components will be described below without affecting the full disclosure and practicability of the invention of the device. Abridged.

圖2為本發明靴帶式開關之一實施例的電路圖。靴帶式開關100從輸入端IN接收輸入電壓Vin,並且從輸出端OUT輸出輸出電壓Vout。靴帶式開關100包含開關110、開關120、開關130、開關140、開關150、開關160、開關170、抬舉電容Cb、電容Cq以及反相器電路180。開關電路SW1對應圖1的開關105。開關110、開關120、開關130、開關140、開關150、開關160及開關170可以分別以電晶體M1、電晶體M7、電晶體M2、電晶體M3、電晶體M8、電晶體M4及電晶體M11實作。每個電晶體具有一第一端、一第二端以及一控制端,第一端及第二端是該電晶體所形成之開關的兩端。對金氧半場效電晶體(Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET)而言,第一端可以是源極及汲極的其中一者,第二端是源極及汲極的另一者,而控制端是閘極。對雙極性接面型電晶體(bipolar junction transistor, BJT)而言,第一端可以是集極(collector)及射極(emitter)的其中一者,第二端是集極及射極另一者,而控制端是基極(base)。FIG. 2 is a circuit diagram of an embodiment of the bootstrap switch of the present invention. The bootstrap switch 100 receives an input voltage Vin from an input terminal IN, and outputs an output voltage Vout from an output terminal OUT. The bootstrap switch 100 includes a switch 110 , a switch 120 , a switch 130 , a switch 140 , a switch 150 , a switch 160 , a switch 170 , a boost capacitor Cb, a capacitor Cq and an inverter circuit 180 . The switch circuit SW1 corresponds to the switch 105 in FIG. 1 . The switch 110, the switch 120, the switch 130, the switch 140, the switch 150, the switch 160 and the switch 170 can respectively use the transistor M1, the transistor M7, the transistor M2, the transistor M3, the transistor M8, the transistor M4 and the transistor M11 practice. Each transistor has a first terminal, a second terminal and a control terminal, the first terminal and the second terminal are the two ends of the switch formed by the transistor. For Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), the first end can be one of the source and the drain, and the second end is the other of the source and the drain. , while the control terminal is the gate. For a bipolar junction transistor (BJT), the first end can be one of the collector and the emitter, and the second end is the other of the collector and the emitter. Or, and the control end is the base (base).

如圖2所示,電晶體M1的控制端與電晶體M7的控制端互相電連接。電晶體M1以第一端接收輸入電壓Vin,並且從第二端輸出輸出電壓Vout。電晶體M7的第一端接收輸入電壓Vin,而電晶體M7的第二端電連接抬舉電容Cb的第一端。電晶體M2的第一端耦接抬舉電容Cb的第一端,且電晶體M2的第二端耦接第一參考電壓(在圖2的例子中為接地準位GND)。電晶體M3的第一端耦接第二參考電壓(在圖2的例子中為電源電壓VDD,電源電壓VDD高於接地準位GND),且電晶體M3的第二端耦接抬舉電容Cb的第二端。電晶體M8的第一端耦接電晶體M1的控制端,且電晶體M8的第二端耦接抬舉電容Cb的第二端。電晶體M4的第一端耦接或電連接電晶體M1的控制端及電晶體M7的控制端,電晶體M4的控制端耦接或電連接電源電壓VDD,且電晶體M4的第二端耦接或電連接節點Nq。電晶體M11的第一端耦接或電連接節點Nq,而電晶體M11的第二端耦接或電連接第一參考電壓(接地準位GND)。電晶體M11的控制端接收時脈Φ1b。電容Cq的第一端耦接或電連接節點Nq。反相器電路180的輸入端接收時脈Φ1b,反相器電路180的輸出端耦接或電連接電容Cq的第二端。As shown in FIG. 2 , the control terminal of the transistor M1 and the control terminal of the transistor M7 are electrically connected to each other. The transistor M1 receives an input voltage Vin at a first terminal, and outputs an output voltage Vout from a second terminal. The first end of the transistor M7 receives the input voltage Vin, and the second end of the transistor M7 is electrically connected to the first end of the boost capacitor Cb. The first end of the transistor M2 is coupled to the first end of the boost capacitor Cb, and the second end of the transistor M2 is coupled to the first reference voltage (the ground level GND in the example of FIG. 2 ). The first terminal of the transistor M3 is coupled to the second reference voltage (in the example of FIG. 2 , the power supply voltage VDD, which is higher than the ground level GND), and the second terminal of the transistor M3 is coupled to the boost capacitor Cb. second end. A first terminal of the transistor M8 is coupled to the control terminal of the transistor M1, and a second terminal of the transistor M8 is coupled to the second terminal of the boost capacitor Cb. The first terminal of the transistor M4 is coupled or electrically connected to the control terminal of the transistor M1 and the control terminal of the transistor M7, the control terminal of the transistor M4 is coupled to or electrically connected to the power supply voltage VDD, and the second terminal of the transistor M4 is coupled to connected or electrically connected to the node Nq. A first end of the transistor M11 is coupled or electrically connected to the node Nq, and a second end of the transistor M11 is coupled or electrically connected to a first reference voltage (ground level GND). The control terminal of the transistor M11 receives the clock pulse Φ1b. A first end of the capacitor Cq is coupled or electrically connected to the node Nq. The input terminal of the inverter circuit 180 receives the clock pulse Φ1b, and the output terminal of the inverter circuit 180 is coupled or electrically connected to the second terminal of the capacitor Cq.

開關130、開關140、開關150及開關170根據時脈Φ1及時脈Φ1b而呈現導通(對應的電晶體開啟)或不導通(對應的電晶體關閉)。圖3顯示時脈Φ1及時脈Φ1b的一個例子,時脈Φ1及時脈Φ1b互為反相訊號。受時脈Φ1及時脈Φ1b的控制,靴帶式開關100交替操作於第一時脈相位Ph1(時脈Φ1為第一準位(例如低準位)且時脈Φ1b為第二準位(例如高準位)的期間)及第二時脈相位Ph2(時脈Φ1為第二準位且時脈Φ1b為第一準位的期間)。以下將詳細說靴帶式開關100的操作細節。The switch 130 , the switch 140 , the switch 150 and the switch 170 are conducted (the corresponding transistor is turned on) or not conducted (the corresponding transistor is turned off) according to the clock Φ1 and the clock Φ1 b. FIG. 3 shows an example of the clock Φ1 and the clock Φ1b. The clock Φ1 and the clock Φ1b are mutually inverse signals. Controlled by the clock Φ1 and the clock Φ1b, the bootstrap switch 100 alternately operates in the first clock phase Ph1 (the clock Φ1 is at the first level (eg low level) and the clock Φ1b is at the second level (eg High level) and the second clock phase Ph2 (the period when the clock Φ1 is at the second level and the clock Φ1b is at the first level). The details of the operation of the bootstrap switch 100 will be described in detail below.

參考圖2及圖3。在第一時脈相位Ph1期間(當時脈Φ1為低準位且時脈Φ1b為高準位時),開關130、開關140、開關160及開關170導通,且開關150不導通。當開關160及開關170導通時,電晶體M1的控制端及電晶體M7的控制端上的電壓實質上等於第一參考電壓(接地準位GND),使得開關110及開關120不導通;換言之,開關110及開關120在第一時脈相位Ph1期間不導通。當開關130及開關140導通時,抬舉電容Cb兩端的電壓實質上分別為第一參考電壓(接地準位GND)及第二參考電壓(電源電壓VDD);換言之,抬舉電容Cb在第一時脈相位Ph1期間充電,且第一時脈相位Ph1結束後抬舉電容Cb上的跨壓Vcb實質上等於第一參考電壓及第二參考電壓的電壓差。Refer to Figure 2 and Figure 3. During the first clock phase Ph1 (when the clock Φ1 is low and the clock Φ1b is high), the switch 130 , the switch 140 , the switch 160 and the switch 170 are turned on, and the switch 150 is not turned on. When the switch 160 and the switch 170 are turned on, the voltages on the control terminals of the transistor M1 and the transistor M7 are substantially equal to the first reference voltage (ground level GND), so that the switch 110 and the switch 120 are not conducted; in other words, The switch 110 and the switch 120 are not turned on during the first clock phase Ph1. When the switch 130 and the switch 140 are turned on, the voltages across the lifting capacitor Cb are substantially the first reference voltage (ground level GND) and the second reference voltage (power supply voltage VDD); in other words, the lifting capacitor Cb is at the first clock pulse Charging is performed during the phase Ph1, and the voltage across the boost capacitor Cb Vcb is substantially equal to the voltage difference between the first reference voltage and the second reference voltage after the end of the first clock phase Ph1.

在第二時脈相位Ph2期間(當時脈Φ1為高準位且時脈Φ1b為低準位時),開關130、開關140、開關160及開關170不導通,且開關150導通。當開關150導通時,電晶體M1及電晶體M7的控制端實質上與抬舉電容Cb的第二端等電位,使得電晶體M1及電晶體M7因為抬舉電容Cb上的跨壓Vcb而開啟。當電晶體M7開啟時,抬舉電容Cb的第二端及電晶體M1的控制端的電壓實質上等於輸入電壓Vin與跨壓Vcb之和。當電晶體M1開啟時,輸出電壓Vout實質上等於輸入電壓Vin,亦即靴帶式開關100導通。During the second clock phase Ph2 (when the clock Φ1 is high and the clock Φ1b is low), the switch 130 , the switch 140 , the switch 160 and the switch 170 are not turned on, and the switch 150 is turned on. When the switch 150 is turned on, the control terminals of the transistor M1 and the transistor M7 are substantially at the same potential as the second terminal of the boost capacitor Cb, so that the transistor M1 and the transistor M7 are turned on due to the voltage Vcb across the boost capacitor Cb. When the transistor M7 is turned on, the voltage at the second end of the boost capacitor Cb and the control end of the transistor M1 is substantially equal to the sum of the input voltage Vin and the cross voltage Vcb. When the transistor M1 is turned on, the output voltage Vout is substantially equal to the input voltage Vin, that is, the bootstrap switch 100 is turned on.

電晶體M1的控制端的電壓有可能大於電源電壓VDD(甚至接近2倍的電源電壓VDD),而電晶體M11可能處於控制端(閘極)與第二端(源極)皆接至接地準位GND的狀態。在一些相關技術中,若將電晶體M11的第一端(汲極)直接電連接至電晶體M1,此時電晶體M1的控制端上的高電壓(承前所述,可高至接近2倍的電源電壓VDD)會使電晶體M11的壽命大幅降低。為了改善上揭問題,本發明的電晶體M4的目的之一是用來阻隔電晶體M1的控制端與電晶體M11,以防止電晶體M11的第一端承受此高電壓。因為電晶體M4的控制端耦接或電連接電源電壓VDD,使電晶體M4的第一端、第二端、控制端之間的電壓皆小於電源電壓VDD,所以電晶體M4可以承受此高電壓。然而,電晶體M4會使得電晶體M1的控制端從第二準位(例如高準位)轉換到第一準位(例如低準位)的速度變慢,造成靴帶式開關100無法在進入第一時脈相位Ph1後立即由導通狀態變成不導通狀態;換言之,電晶體M4可能會造成靴帶式開關100的切換速度變慢。The voltage of the control terminal of the transistor M1 may be greater than the power supply voltage VDD (even close to 2 times the power supply voltage VDD), and the transistor M11 may be connected to the ground level at the control terminal (gate) and the second terminal (source) The state of GND. In some related technologies, if the first terminal (drain) of the transistor M11 is directly electrically connected to the transistor M1, the high voltage on the control terminal of the transistor M1 (as mentioned above, can be nearly twice as high as The power supply voltage VDD) will greatly reduce the life of the transistor M11. In order to improve the problem disclosed above, one of the purposes of the transistor M4 of the present invention is to isolate the control terminal of the transistor M1 from the transistor M11 to prevent the first terminal of the transistor M11 from bearing the high voltage. Because the control terminal of the transistor M4 is coupled or electrically connected to the power supply voltage VDD, the voltages between the first terminal, the second terminal and the control terminal of the transistor M4 are all lower than the power supply voltage VDD, so the transistor M4 can withstand this high voltage . However, the transistor M4 slows down the switching speed of the control terminal of the transistor M1 from the second level (such as high level) to the first level (such as low level), so that the bootstrap switch 100 cannot Immediately after the first clock phase Ph1, the conduction state becomes non-conduction state; in other words, the transistor M4 may cause the switching speed of the bootstrap switch 100 to slow down.

電容Cq及反相器電路180的目的之一在於快速拉高或拉低節點Nq的電壓,進而加快電晶體M4的切換速度(即,提高電晶體M1的控制端的電壓轉換速度,等效於加快靴帶式開關100的切換速度)。One of the purposes of the capacitor Cq and the inverter circuit 180 is to quickly pull up or pull down the voltage of the node Nq, thereby accelerating the switching speed of the transistor M4 (that is, increasing the voltage conversion speed of the control terminal of the transistor M1, which is equivalent to speeding up switching speed of the bootstrap switch 100).

當時脈Φ1b由第一準位轉換至第二準位時(電晶體M11開始導通但尚未完全導通),反相器電路180輸出與時脈Φ1b反相的輸出訊號(即第一準位的訊號),然後該輸出訊號經由電容Cq耦合至節點Nq,使得節點Nq的電壓可以在電晶體M11完全導通前便開始下降。節點Nq上的電壓一旦開始下降,將使電晶體M4的第一端及第二端間的跨壓增加,令電晶體M4的導通能力上升。換言之,反相器電路180及電容Cq能大幅地幫助電晶體M4提早導通,因此可以使電晶體M1的控制端的電壓更快下降(即,加快靴帶式開關100的關閉速度)。When the clock pulse Φ1b is switched from the first level to the second level (transistor M11 starts to conduct but is not completely turned on), the inverter circuit 180 outputs an output signal that is inverse to the clock pulse Φ1b (that is, the signal of the first level ), and then the output signal is coupled to the node Nq through the capacitor Cq, so that the voltage of the node Nq can start to drop before the transistor M11 is fully turned on. Once the voltage on the node Nq begins to drop, the cross-voltage between the first terminal and the second terminal of the transistor M4 will increase, so that the conduction capability of the transistor M4 will increase. In other words, the inverter circuit 180 and the capacitor Cq can greatly help the transistor M4 to be turned on earlier, so that the voltage at the control terminal of the transistor M1 can drop faster (ie, speed up the turn-off speed of the bootstrap switch 100 ).

當時脈Φ1b由第二準位轉換至第一準位時(電晶體M11開始關閉但尚未完全關閉),反相器電路180輸出與時脈Φ1b反相的輸出訊號(即第二準位的訊號),然後該輸出訊號經由電容Cq耦合至節點Nq,使得節點Nq的電壓可以在電晶體M11完全關閉前便開始上升。節點Nq上的電壓一開始上升,會透過電晶體M4拉升電晶體M1控制端的電壓。換言之,反相器電路180及電容Cq能使電晶體M1的控制端的電壓更快上升(即,加快靴帶式開關100的導通速度)。When the clock pulse Φ1b is switched from the second level to the first level (transistor M11 starts to turn off but not completely turned off), the inverter circuit 180 outputs an output signal that is inverted from the clock Φ1b (that is, the signal of the second level ), and then the output signal is coupled to the node Nq through the capacitor Cq, so that the voltage of the node Nq can start to rise before the transistor M11 is completely turned off. When the voltage on the node Nq starts to rise, the voltage at the control terminal of the transistor M1 will be pulled up through the transistor M4. In other words, the inverter circuit 180 and the capacitor Cq can make the voltage of the control terminal of the transistor M1 rise faster (ie, speed up the conduction speed of the bootstrap switch 100 ).

圖4是節點Nq的電壓及電晶體M1之控制端的電壓的電腦模擬波形圖。曲線g2及曲線b2代表節點Nq的電壓,曲線g3及曲線b3代表電晶體M1的控制端的電壓。曲線g2及曲線g3對應到有包含反相器電路180及電容Cq之靴帶式開關(例如圖2之靴帶式開關100),而曲線b2及曲線b3對應到沒有包含反相器電路180及電容Cq之靴帶式開關(例如圖2之電路但移除反相器電路180及電容Cq)。由圖4可見,當時脈Φ1b由第一準位轉換到第二準位(例如時間點T1)時,曲線g3比曲線b3下降得更快(曲線g3斜率大於曲線b3斜率),也就是電晶體M1的控制端的電壓提早約T3-T2的時間到達第一準位。當時脈Φ1b由第二準位轉換到第一準位(例如時間點T4)時,曲線g3比曲線b3更早開始上升,也就是靴帶式開關100更快速啟動。節點Nq上的電壓也有類似的趨勢,故不再贅述。FIG. 4 is a computer simulation waveform diagram of the voltage of the node Nq and the voltage of the control terminal of the transistor M1. The curve g2 and the curve b2 represent the voltage of the node Nq, and the curve g3 and the curve b3 represent the voltage of the control terminal of the transistor M1. Curve g2 and curve g3 correspond to a bootstrap switch (such as the bootstrap switch 100 of FIG. Bootstrap switch of capacitor Cq (such as the circuit of FIG. 2 but removing inverter circuit 180 and capacitor Cq). It can be seen from Figure 4 that when the time pulse Φ1b is switched from the first level to the second level (such as time point T1), the curve g3 drops faster than the curve b3 (the slope of the curve g3 is greater than the slope of the curve b3), that is, the transistor The voltage of the control terminal of M1 reaches the first level about T3-T2 earlier. When the clock pulse Φ1b is switched from the second level to the first level (such as time point T4), the curve g3 starts to rise earlier than the curve b3, that is, the bootstrap switch 100 is activated more quickly. The voltage on the node Nq also has a similar trend, so it will not be repeated here.

在一些實施例中,反相器電路180包含奇數個反相器,而電容Cq的電容值可以約為數十至數百飛法拉(fF),較佳為10飛法拉至100飛法拉之間,而電容Cq的電容值也是一種權衡(trade-off),因為若電容Cq的電容值過大,會提高反相器電路180的尺寸,導致所加入的反相器電路180與電容Cq的操作速度慢於電晶體M11。In some embodiments, the inverter circuit 180 includes an odd number of inverters, and the capacitance of the capacitor Cq may be tens to hundreds of femtofarads (fF), preferably between 10 femtofarads and 100 femtofarads , and the capacitance value of capacitor Cq is also a trade-off (trade-off), because if the capacitance value of capacitor Cq is too large, the size of inverter circuit 180 will be increased, resulting in the operation speed of the added inverter circuit 180 and capacitor Cq Slower than transistor M11.

圖5為本發明靴帶式開關之另一實施例的電路圖。靴帶式開關500與靴帶式開關100相似,差別在於靴帶式開關500更包含開關185、開關190及開關195。開關185、開關190及開關195分別由電晶體M9、電晶體M5及電晶體M6實作。開關185耦接於第二參考電壓與電晶體M8的控制端之間,且受到時脈Φ1控制。開關190耦接於抬舉電容Cb的第一端與電晶體M8的控制端之間,且受到時脈Φ1控制。開關195耦接於抬舉電容Cb的第一端與電晶體M8的控制端之間,且電晶體M6的控制端電連接電晶體M1的控制端及電晶體M7的控制端。電晶體M5、電晶體M6及電晶體M9用來提供靴帶式開關500操作過程中的過電壓保護,用以延長元件之使用壽命,其動作原理為本技術領域具有通常知識者所熟知,故不再贅述。FIG. 5 is a circuit diagram of another embodiment of the bootstrap switch of the present invention. The bootstrap switch 500 is similar to the bootstrap switch 100 , the difference is that the bootstrap switch 500 further includes a switch 185 , a switch 190 and a switch 195 . The switch 185 , the switch 190 and the switch 195 are realized by the transistor M9 , the transistor M5 and the transistor M6 respectively. The switch 185 is coupled between the second reference voltage and the control terminal of the transistor M8, and is controlled by the clock Φ1. The switch 190 is coupled between the first end of the boost capacitor Cb and the control end of the transistor M8, and is controlled by the clock Φ1. The switch 195 is coupled between the first end of the boost capacitor Cb and the control end of the transistor M8, and the control end of the transistor M6 is electrically connected to the control end of the transistor M1 and the control end of the transistor M7. The transistor M5, the transistor M6 and the transistor M9 are used to provide overvoltage protection during the operation of the bootstrap switch 500 to prolong the service life of the components. No longer.

綜上所述,反相器電路180及電容Cq有助於節點Nq上的電壓及電晶體M1的控制端的電壓提早上升或下降,及/或快速地上升或下降,使得靴帶式開關有更快的反應速度(即,可以操作在更高速)。To sum up, the inverter circuit 180 and the capacitor Cq help the voltage on the node Nq and the voltage on the control terminal of the transistor M1 rise or fall early, and/or rise or fall quickly, so that the bootstrap switch has a better performance. Fast response speed (i.e., can operate at higher speeds).

在其他的實施例中,前述實施例中的PMOS電晶體及NMOS電晶體可以分別以NMOS電晶體及PMOS電晶體取代,本技術領域具有通常知識者知道如何順應地調整時脈Φ1及時脈Φ1b的相位或準位,以及順應地調整第一參考電壓及第二參考電壓,來實現上揭的實施內容。In other embodiments, the PMOS transistors and NMOS transistors in the foregoing embodiments can be replaced by NMOS transistors and PMOS transistors respectively, and those skilled in the art know how to adjust the clock Φ1 and the clock Φ1b accordingly. The phase or level, and adjusting the first reference voltage and the second reference voltage accordingly, realize the implementation content disclosed above.

請注意,前揭圖示中,元件之形狀、尺寸及比例僅為示意,係供本技術領域具有通常知識者瞭解本發明之用,非用以限制本發明。Please note that the shapes, sizes and proportions of the components in the preceding drawings are only for illustration, and are for those skilled in the art to understand the present invention, and are not intended to limit the present invention.

雖然本發明之實施例如上所述,然而該些實施例並非用來限定本發明,本技術領域具有通常知識者可依據本發明之明示或隱含之內容對本發明之技術特徵施以變化,凡此種種變化均可能屬於本發明所尋求之專利保護範疇,換言之,本發明之專利保護範圍須視本說明書之申請專利範圍所界定者為準。Although the embodiments of the present invention are as described above, these embodiments are not intended to limit the present invention, and those skilled in the art can make changes to the technical characteristics of the present invention according to the explicit or implicit contents of the present invention. All these changes may belong to the scope of patent protection sought by the present invention. In other words, the scope of patent protection of the present invention must be defined by the scope of patent application in this specification.

10,100,500:靴帶式開關 101,102,103,104,105,110,120,130,140,150,160,170,185,190,195:開關 106:N型金氧半場效電晶體 107,Cb:抬舉電容 VI,IN:輸入端 VO,OUT:輸出端 V1,V2,V3:電壓源 Vin:輸入電壓 Vout:輸出電壓 SW1:開關電路 Cq:電容 180:反相器電路 M1,M7,M2,M3,M8,M4,M11,M9,M5,M6:電晶體 GND:接地準位 VDD:電源電壓 Nq:節點 Φ1,Φ1b:時脈 Ph1:第一時脈相位 Ph2:第二時脈相位 Vcb:跨壓 g2,b2,g3,b3:曲線 T1,T2,T3,T4:時間點 10,100,500: bootstrap switch 101,102,103,104,105,110,120,130,140,150,160,170,185,190,195: switch 106: N-type metal oxide half field effect transistor 107, Cb: lifting capacitor VI, IN: input terminal VO, OUT: output terminal V1, V2, V3: voltage source Vin: input voltage Vout: output voltage SW1: switch circuit Cq: Capacitance 180: Inverter circuit M1, M7, M2, M3, M8, M4, M11, M9, M5, M6: Transistor GND: ground level VDD: power supply voltage Nq: node Φ1,Φ1b: Clock Ph1: first clock phase Ph2: second clock phase Vcb: cross voltage g2, b2, g3, b3: curves T1, T2, T3, T4: time points

圖1為習知的靴帶式開關的電路圖; 圖2為本發明靴帶式開關之一實施例的電路圖; 圖3顯示時脈Φ1及時脈Φ1b的一個例子; 圖4是節點Nq的電壓及電晶體M1之控制端的電壓的電腦模擬波形圖;以及 圖5為本發明靴帶式開關之另一實施例的電路圖。 Fig. 1 is the circuit diagram of known bootstrap switch; Fig. 2 is the circuit diagram of one embodiment of bootstrap switch of the present invention; Fig. 3 shows an example of clock Φ1 and clock Φ1b; Fig. 4 is a computer simulation waveform diagram of the voltage of the node Nq and the voltage of the control terminal of the transistor M1; and FIG. 5 is a circuit diagram of another embodiment of the bootstrap switch of the present invention.

100:靴帶式開關 110,120,130,140,150,160,170:開關 Cb:抬舉電容 IN:輸入端 OUT:輸出端 Vin:輸入電壓 Vout:輸出電壓 SW1:開關電路 Cq:電容 180:反相器電路 M1,M7,M2,M3,M8,M4,M11:電晶體 GND:接地準位 VDD:電源電壓 Nq:節點 Φ1,Φ1b:時脈 Vcb:跨壓 100: Bootstrap switch 110,120,130,140,150,160,170: switch Cb: lift capacitor IN: input terminal OUT: output terminal Vin: input voltage Vout: output voltage SW1: switch circuit Cq: Capacitance 180: Inverter circuit M1, M7, M2, M3, M8, M4, M11: Transistor GND: ground level VDD: power supply voltage Nq: node Φ1,Φ1b: Clock Vcb: cross voltage

Claims (10)

一種靴帶式開關,用來接收一輸入電壓並且輸出一輸出電壓,包含:一第一電晶體,具有一第一端、一第二端及一第一控制端,其中,該第一電晶體由該第一端接收該輸入電壓,且由該第二端輸出該輸出電壓;一第一電容,具有一第三端及一第四端;一第二電晶體,具有一第五端、一第六端及一第二控制端,其中,該第二電晶體由該第五端接收該輸入電壓,該第六端電連接該第一電容的該第三端,且該第二控制端電連接該第一電晶體的該第一控制端;一第一開關,耦接於該第一電容的該第三端與一第一參考電壓之間;一第二開關,耦接於該第一電容的該第四端與一第二參考電壓之間;一第三開關,耦接於該第一電容的該第四端與該第一電晶體的該第一控制端之間;一第四開關,耦接於該第一電晶體的該第一控制端與一節點之間;一第五開關,具有一第三控制端且耦接於該節點與該第一參考電壓之間;一反相器電路,具有一輸入端及一輸出端,其中,該輸入端耦接該第五開關之該第三控制端,且該反相器電路用來反相該第三控制端之一電壓;以及 一第二電容,具有一第七端及一第八端,其中,該第七端耦接該反相器電路之該輸出端,且該第八端耦接該節點。 A bootstrap switch for receiving an input voltage and outputting an output voltage, comprising: a first transistor having a first terminal, a second terminal and a first control terminal, wherein the first transistor The first end receives the input voltage, and outputs the output voltage through the second end; a first capacitor has a third end and a fourth end; a second transistor has a fifth end, a The sixth terminal and a second control terminal, wherein the second transistor receives the input voltage from the fifth terminal, the sixth terminal is electrically connected to the third terminal of the first capacitor, and the second control terminal is electrically connected to the first control end of the first transistor; a first switch, coupled between the third end of the first capacitor and a first reference voltage; a second switch, coupled to the first between the fourth end of the capacitor and a second reference voltage; a third switch coupled between the fourth end of the first capacitor and the first control end of the first transistor; a fourth a switch, coupled between the first control terminal of the first transistor and a node; a fifth switch, having a third control terminal and coupled between the node and the first reference voltage; an inverse an inverter circuit having an input terminal and an output terminal, wherein the input terminal is coupled to the third control terminal of the fifth switch, and the inverter circuit is used for inverting a voltage of the third control terminal; as well as A second capacitor has a seventh terminal and an eighth terminal, wherein the seventh terminal is coupled to the output terminal of the inverter circuit, and the eighth terminal is coupled to the node. 如請求項1之靴帶式開關,其中,於一第一時脈相位時,該第一開關、該第二開關、該第四開關及該第五開關導通且該第三開關不導通,以充電該第一電容;於一第二時脈相位時,該第三開關導通且該第一開關、該第二開關、該第四開關及該第五開關不導通。 The bootstrap switch according to claim 1, wherein, at a first clock phase, the first switch, the second switch, the fourth switch, and the fifth switch are turned on and the third switch is not turned on, so that charging the first capacitor; at a second clock phase, the third switch is turned on and the first switch, the second switch, the fourth switch and the fifth switch are not turned on. 如請求項1之靴帶式開關,其中,該第四開關具有一第四控制端,且該第四控制端電連接該第二參考電壓。 The bootstrap switch according to claim 1, wherein the fourth switch has a fourth control terminal, and the fourth control terminal is electrically connected to the second reference voltage. 如請求項1之靴帶式開關,其中,該反相器電路包含奇數個反相器。 The bootstrap switch according to claim 1, wherein the inverter circuit includes an odd number of inverters. 如請求項1之靴帶式開關,其中,該第二電容的電容值介於10飛法拉至100飛法拉之間。 The bootstrap switch according to claim 1, wherein the capacitance of the second capacitor is between 10 femtofarads and 100 femtofarads. 一種靴帶式開關,用來接收一輸入電壓並且輸出一輸出電壓,包含:一第一電晶體,具有一第一端、一第二端及一第一控制端,其中,該第一電晶體由該第一端接收該輸入電壓,且由該第二端輸出該輸出電壓;一第一電容,具有一第三端及一第四端;一第二電晶體,具有一第五端、一第六端及一第二控制端,其中,該第二電晶體由該第五端接收該輸入電壓,該第六端電連接該第一電容 的該第三端,且該第二控制端電連接該第一電晶體的該第一控制端;一第一開關,耦接於該第一電容的該第三端與一第一參考電壓之間;一第二開關,耦接於該第一電容的該第四端與一第二參考電壓之間;一第三開關,耦接於該第一電容的該第四端與該第一電晶體的該第一控制端之間;一第四開關,耦接於該第一電晶體的該第一控制端與一節點之間;一第五開關,具有一第三控制端且耦接於該節點與該第一參考電壓之間;一反相器電路,具有一輸入端及一輸出端,其中,該輸入端耦接該第五開關之該第三控制端,當該第三控制端為低準位時,該輸出端為高準位,且當該第三控制端為高準位時,該輸出端為低準位;以及一第二電容,具有一第七端及一第八端,其中,該第七端耦接該反相器電路之該輸出端,且該第八端耦接該節點。 A bootstrap switch for receiving an input voltage and outputting an output voltage, comprising: a first transistor having a first terminal, a second terminal and a first control terminal, wherein the first transistor The first end receives the input voltage, and outputs the output voltage through the second end; a first capacitor has a third end and a fourth end; a second transistor has a fifth end, a a sixth terminal and a second control terminal, wherein the second transistor receives the input voltage from the fifth terminal, and the sixth terminal is electrically connected to the first capacitor the third end of the first capacitor, and the second control end is electrically connected to the first control end of the first transistor; a first switch is coupled between the third end of the first capacitor and a first reference voltage Between; a second switch, coupled between the fourth terminal of the first capacitor and a second reference voltage; a third switch, coupled between the fourth terminal of the first capacitor and the first voltage between the first control terminals of the crystal; a fourth switch, coupled between the first control terminal of the first transistor and a node; a fifth switch, having a third control terminal and coupled to between the node and the first reference voltage; an inverter circuit having an input terminal and an output terminal, wherein the input terminal is coupled to the third control terminal of the fifth switch, when the third control terminal When the level is low, the output terminal is high level, and when the third control terminal is high level, the output terminal is low level; and a second capacitor has a seventh terminal and an eighth terminal, wherein the seventh terminal is coupled to the output terminal of the inverter circuit, and the eighth terminal is coupled to the node. 如請求項6之靴帶式開關,其中,於一第一時脈相位時,該第一開關、該第二開關、該第四開關及該第五開關導通且該第三開關不導通,以充電該第一電容;於一第二時脈相位時,該第三開關導通且該第一開關、該第二開關、該第四開關及該第五開關不導通。 The bootstrap switch of claim 6, wherein, at a first clock phase, the first switch, the second switch, the fourth switch, and the fifth switch are turned on and the third switch is not turned on, so that charging the first capacitor; at a second clock phase, the third switch is turned on and the first switch, the second switch, the fourth switch and the fifth switch are not turned on. 如請求項6之靴帶式開關,其中,該第四開關具有一第四控制端,且該第四控制端電連接該第二參考電壓。 The bootstrap switch according to claim 6, wherein the fourth switch has a fourth control terminal, and the fourth control terminal is electrically connected to the second reference voltage. 如請求項6之靴帶式開關,其中,該反相器電路包含奇數個反相器。 The bootstrap switch according to claim 6, wherein the inverter circuit includes an odd number of inverters. 如請求項6之靴帶式開關,其中,該第二電容的電容值介於10飛法拉至100飛法拉之間。 The bootstrap switch according to claim 6, wherein the capacitance of the second capacitor is between 10 femtofarads and 100 femtofarads.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060202736A1 (en) * 2005-03-08 2006-09-14 Aksin Devrim Y Bootstrapped switch for sampling inputs with a signal range greater than supply voltage
US7253675B2 (en) * 2005-03-08 2007-08-07 Texas Instruments Incorporated Bootstrapping circuit capable of sampling inputs beyond supply voltage
US20200212904A1 (en) * 2018-12-28 2020-07-02 Qualcomm Incorporated Bootstrapped switch circuit with improved speed
TW202116019A (en) * 2019-10-08 2021-04-16 瑞昱半導體股份有限公司 Bootstrapped switch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060202736A1 (en) * 2005-03-08 2006-09-14 Aksin Devrim Y Bootstrapped switch for sampling inputs with a signal range greater than supply voltage
US7253675B2 (en) * 2005-03-08 2007-08-07 Texas Instruments Incorporated Bootstrapping circuit capable of sampling inputs beyond supply voltage
US20200212904A1 (en) * 2018-12-28 2020-07-02 Qualcomm Incorporated Bootstrapped switch circuit with improved speed
TW202116019A (en) * 2019-10-08 2021-04-16 瑞昱半導體股份有限公司 Bootstrapped switch

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