TWI805868B - 使用以深度學習為基礎之缺陷偵測及分類方案用於像素位準影像量化 - Google Patents

使用以深度學習為基礎之缺陷偵測及分類方案用於像素位準影像量化 Download PDF

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TWI805868B
TWI805868B TW108141684A TW108141684A TWI805868B TW I805868 B TWI805868 B TW I805868B TW 108141684 A TW108141684 A TW 108141684A TW 108141684 A TW108141684 A TW 108141684A TW I805868 B TWI805868 B TW I805868B
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image
processor
defects
pixels
wafer
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TW108141684A
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TW202033954A (zh
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哈利 帕薩吉
席娃布拉撒什 米那什桑多藍
塔納伊 班薩爾
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美商科磊股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/11—Region-based segmentation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20081—Training; Learning
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20084—Artificial neural networks [ANN]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method
    • H01J2237/2806—Secondary charged particle
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Quality & Reliability (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Image Processing (AREA)
  • Image Analysis (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW108141684A 2018-11-15 2019-11-15 使用以深度學習為基礎之缺陷偵測及分類方案用於像素位準影像量化 TWI805868B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
IN201841042919 2018-11-15
IN201841042919 2018-11-15
US16/249,337 US10672588B1 (en) 2018-11-15 2019-01-16 Using deep learning based defect detection and classification schemes for pixel level image quantification
US16/249,337 2019-01-16

Publications (2)

Publication Number Publication Date
TW202033954A TW202033954A (zh) 2020-09-16
TWI805868B true TWI805868B (zh) 2023-06-21

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US (1) US10672588B1 (enExample)
EP (1) EP3870959A4 (enExample)
JP (1) JP7216822B2 (enExample)
KR (1) KR102513717B1 (enExample)
CN (1) CN112969911B (enExample)
TW (1) TWI805868B (enExample)
WO (1) WO2020102611A1 (enExample)

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CN115965574B (zh) * 2022-08-31 2025-03-14 东方晶源微电子科技(北京)股份有限公司 基于设计版图的扫描电子显微镜图像缺陷检测方法、装置
US12136225B2 (en) * 2022-09-09 2024-11-05 Applied Materials, Inc. Clog detection via image analytics
US20240169514A1 (en) * 2022-11-21 2024-05-23 Onto Innovation Inc. Defect detection in manufactured articles using multi-channel images
TWI839046B (zh) * 2022-12-26 2024-04-11 華邦電子股份有限公司 膜層中的縫隙的檢測方法
CN116993669B (zh) * 2023-06-29 2024-11-08 东方晶源微电子科技(上海)有限公司 扫描电镜图像缺陷的确定方法及装置
CN116840238A (zh) * 2023-07-04 2023-10-03 杭州中为光电技术有限公司 一种硅棒检测设备、检测方法及切割方法
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Publication number Publication date
KR20210080567A (ko) 2021-06-30
CN112969911A (zh) 2021-06-15
JP7216822B2 (ja) 2023-02-01
EP3870959A4 (en) 2022-07-27
EP3870959A1 (en) 2021-09-01
TW202033954A (zh) 2020-09-16
JP2022507543A (ja) 2022-01-18
WO2020102611A1 (en) 2020-05-22
US10672588B1 (en) 2020-06-02
CN112969911B (zh) 2022-09-06
US20200161081A1 (en) 2020-05-21
KR102513717B1 (ko) 2023-03-23

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