TWI805468B - Electrostatic discharge protection circuit - Google Patents

Electrostatic discharge protection circuit Download PDF

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TWI805468B
TWI805468B TW111130396A TW111130396A TWI805468B TW I805468 B TWI805468 B TW I805468B TW 111130396 A TW111130396 A TW 111130396A TW 111130396 A TW111130396 A TW 111130396A TW I805468 B TWI805468 B TW I805468B
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type
well
protection circuit
electrostatic discharge
conductive
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TW111130396A
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TW202408116A (en
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王世鈺
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旺宏電子股份有限公司
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Abstract

An electrostatic discharge protection circuit includes a N type region, a P type component, a P type region, a N type element, a first conductive terminal, a second conductive terminal, a power clamp circuit and a conductive pad. The P type component is in the N type region. The N type element is in the P type region. The first conductive terminal is electrically connected to the N type region. The second conductive terminal is electrically connected to the P type region and the N type element. The power clamp circuit is electrically connected between the first conductive terminal and the second conductive terminal. The conductive pad is electrically connected to the P type component.

Description

靜電放電防護電路 Electrostatic discharge protection circuit

本發明是有關於一種靜電放電防護電路。 The invention relates to an electrostatic discharge protection circuit.

在半導體裝置設計上，由於人體放電或機器放電的因素，靜電放電造成的電流容易對電路內部造成損害。因此，半導體裝置中需要設置靜電放電防護電路，達到靜電保護的目的。 In the design of semiconductor devices, due to factors such as human body discharge or machine discharge, the current caused by electrostatic discharge is likely to cause damage to the inside of the circuit. Therefore, an electrostatic discharge protection circuit needs to be provided in the semiconductor device to achieve the purpose of electrostatic protection.

本發明係有關於一種靜電放電防護電路。 The invention relates to an electrostatic discharge protection circuit.

根據本發明之一方面，提出一種靜電放電防護電路，其包括N型區、P型部件、P型區、N型元件、第一導電端、二導電端、電源箝制電路與導電墊。P型部件在N型區中。N型元件在P型區中。第一導電端電性連接至N型區。第二導電端電性連接至P型區與N型元件。電源箝制電路電性連接在第一導電端與第二導電端之間。導電墊電性連接至P型部件。 According to one aspect of the present invention, an electrostatic discharge protection circuit is provided, which includes an N-type region, a P-type component, a P-type region, an N-type element, a first conductive terminal, a second conductive terminal, a power supply clamping circuit and a conductive pad. The P-type components are in the N-type region. N-type elements are in the P-type region. The first conductive end is electrically connected to the N-type region. The second conductive end is electrically connected to the P-type region and the N-type element. The power clamping circuit is electrically connected between the first conductive end and the second conductive end. The conductive pad is electrically connected to the P-type component.

根據本發明之另一方面，提出一種靜電放電防護電路，其包括P型區、N型部件、N型區、P型元件、第一導電端、第二導電端、電源箝制電路與導電墊。N型部件在P型區中。P型元 件在N型區中。第一導電端電性連接至P型元件與N型區。第二導電端電性連接至P型區。電源箝制電路電性連接在第一導電端與第二導電端之間。導電墊電性連接至N型部件。 According to another aspect of the present invention, an electrostatic discharge protection circuit is provided, which includes a P-type region, an N-type component, an N-type region, a P-type element, a first conductive terminal, a second conductive terminal, a power clamping circuit and a conductive pad. N-type components are in the P-type region. P-type element Components are in the N-type area. The first conductive end is electrically connected to the P-type element and the N-type region. The second conductive end is electrically connected to the P-type region. The power clamping circuit is electrically connected between the first conductive end and the second conductive end. The conductive pad is electrically connected to the N-type component.

為了對本發明之上述及其他方面有更佳的瞭解，下文特舉實施例，並配合所附圖式詳細說明如下： In order to have a better understanding of the above-mentioned and other aspects of the present invention, the following specific examples are given in detail with the accompanying drawings as follows:

102:N型區 102: N-type area

104:N型井 104:N type well

106:N型構件 106:N type component

118:N型部件 118: N type parts

120:N型元件 120: N-type components

124:N型深井 124: N type deep well

130:N型井 130: N type well

208:P型區 208: P-type area

210:P型井 210:P type well

212:P型構件 212: P-shaped component

214:P型部件 214:P type parts

216:P型元件 216: P-type components

226:P型井 226:P type well

228:P型基底 228: P-type base

322:電源箝制電路 322: Power clamping circuit

DQ:導電墊 DQ: conductive pad

VCCQ:第一導電端 VCCQ: the first conductive terminal

VSSQ:接地端 VSSQ: ground terminal

PA、PB、PC、PD:電流路徑 PA, PB, PC, PD: current path

第1A圖繪示第一實施例的靜電放電防護電路的剖面圖。 FIG. 1A is a cross-sectional view of the ESD protection circuit of the first embodiment.

第1B圖繪示第一實施例的靜電放電防護電路的上視圖。 FIG. 1B shows a top view of the ESD protection circuit of the first embodiment.

第1C圖繪示一實施例的靜電放電防護電路及電流路徑。 FIG. 1C shows an ESD protection circuit and a current path of an embodiment.

第1D圖繪示一實施例的靜電放電防護電路及電流路徑。 FIG. 1D shows an ESD protection circuit and a current path of an embodiment.

第2A圖繪示第二實施例的靜電放電防護電路的剖面圖。 FIG. 2A is a cross-sectional view of the ESD protection circuit of the second embodiment.

第2B圖繪示第二實施例的靜電放電防護電路的上視圖。 FIG. 2B shows a top view of the ESD protection circuit of the second embodiment.

第3圖繪示第三實施例的靜電放電防護電路的剖面圖。 FIG. 3 is a cross-sectional view of the ESD protection circuit of the third embodiment.

第4A圖繪示第四實施例的靜電放電防護電路的剖面圖。 FIG. 4A is a cross-sectional view of the ESD protection circuit of the fourth embodiment.

第4B圖繪示第四實施例的靜電放電防護電路的上視圖。 FIG. 4B is a top view of the ESD protection circuit of the fourth embodiment.

第5A圖繪示第五實施例的靜電放電防護電路的剖面圖。 FIG. 5A is a cross-sectional view of the ESD protection circuit of the fifth embodiment.

第5B圖繪示第五實施例的靜電放電防護電路的上視圖。 FIG. 5B is a top view of the ESD protection circuit of the fifth embodiment.

第6圖繪示第六實施例的靜電放電防護電路的剖面圖。 FIG. 6 is a cross-sectional view of the ESD protection circuit of the sixth embodiment.

第7A圖繪示第七實施例的靜電放電防護電路的剖面圖。 FIG. 7A is a cross-sectional view of the ESD protection circuit of the seventh embodiment.

第7B圖繪示第七實施例的靜電放電防護電路的上視圖。 FIG. 7B is a top view of the ESD protection circuit of the seventh embodiment.

第8A圖繪示第八實施例的靜電放電防護電路的剖面圖。 FIG. 8A is a cross-sectional view of the ESD protection circuit of the eighth embodiment.

第8B圖繪示第八實施例的靜電放電防護電路的上視圖。 FIG. 8B is a top view of the ESD protection circuit of the eighth embodiment.

第9A圖繪示第九實施例的靜電放電防護電路的剖面圖。 FIG. 9A is a cross-sectional view of the electrostatic discharge protection circuit of the ninth embodiment.

第9B圖繪示第九實施例的靜電放電防護電路的上視圖。 FIG. 9B is a top view of the electrostatic discharge protection circuit of the ninth embodiment.

本揭露提出一種靜電放電防護電路及其操作/使用方法。以下係以一些實施例做說明。須注意的是，本揭露並非顯示出所有可能的實施例，未於本揭露提出的其他實施態樣也可能可以應用。再者，圖式上的尺寸比例並非按照實際產品等比例繪製。因此，說明書和圖示內容僅作敘述實施例之用，而非作為限縮本揭露保護範圍之用。另外，實施例中之敘述，例如細部結構、製程步驟和材料應用等等，僅為舉例說明之用，並非對本揭露欲保護之範圍做限縮。實施例之步驟和結構各自細節可在不脫離本揭露之精神和範圍內根據實際應用製程之需要而加以變化與修飾。以下是以相同/類似的符號表示相同/類似的元件做說明。 The present disclosure proposes an electrostatic discharge protection circuit and its operation/use method. The following is an illustration with some embodiments. It should be noted that this disclosure does not show all possible embodiments, and other implementations not mentioned in this disclosure may also be applicable. Furthermore, the size ratios in the drawings are not drawn to the same proportions as the actual products. Therefore, the specification and illustrations are only used to describe the embodiments, rather than to limit the protection scope of the present disclosure. In addition, the descriptions in the embodiments, such as detailed structures, process steps, and material applications, etc., are for illustration purposes only, and are not intended to limit the protection scope of the present disclosure. The details of the steps and structures of the embodiments can be changed and modified according to the needs of the actual application process without departing from the spirit and scope of the present disclosure. The same/similar symbols are used to represent the same/similar components in the following description.

請參照第1A圖與第1B圖，其分別繪示第一實施例的靜電放電防護電路的剖面圖與上視圖。N型區102包括N型井104及N型構件106。N型構件106在N型井104中。P型區208包括P型井210及P型構件212。P型構件212在P型井210中。N型區102鄰近P型區208。N型井104鄰近P型井210。 Please refer to FIG. 1A and FIG. 1B , which respectively depict a cross-sectional view and a top view of the electrostatic discharge protection circuit of the first embodiment. The N-type region 102 includes an N-type well 104 and an N-type member 106 . N-type member 106 is in N-type well 104 . The P-type region 208 includes a P-type well 210 and a P-type member 212 . P-type member 212 is in P-type well 210 . The N-type region 102 is adjacent to the P-type region 208 . N-type well 104 is adjacent to P-type well 210 .

P型部件214在N型井104中。P型元件216在N型井104中。N型構件106、P型部件214和P型元件216藉由N型井104彼此分開。N型構件106、P型部件214和P型元件216可為利用離子佈植方 式形成在N型井104中的摻雜區。N型構件106的N型摻雜質濃度可高於N型井104的N型摻雜質濃度。N型構件106可為N型重摻雜區(例如N+摻雜區)。P型部件214和P型元件216可為P型重摻雜區(例如P+摻雜區)。 P-type component 214 is in N-type well 104 . P-type element 216 is in N-type well 104 . N-type component 106 , P-type component 214 and P-type element 216 are separated from each other by N-type well 104 . N-type components 106, P-type components 214, and P-type elements 216 can be A doped region formed in the N-type well 104. The N-type dopant concentration of the N-type member 106 may be higher than the N-type dopant concentration of the N-type well 104 . The N-type component 106 can be an N-type heavily doped region (such as an N+ doped region). The P-type component 214 and the P-type element 216 can be P-type heavily doped regions (eg, P+ doped regions).

N型部件118在P型井210中。N型元件120在P型井210中。P型構件212、N型部件118和N型元件120藉由P型井210彼此分開。P型構件212、N型部件118和N型元件120可為利用離子佈植方式形成在P型區208中的摻雜區。P型構件212的P型摻雜質濃度可高於P型井210的P型摻雜質濃度。P型構件212可為P型重摻雜區(例如P+摻雜區)。N型部件118和N型元件120可為N型重摻雜區(例如N+摻雜區)。 N-type component 118 is in P-type well 210 . N-type element 120 is in P-type well 210 . The P-type component 212 , the N-type component 118 and the N-type element 120 are separated from each other by the P-type well 210 . The P-type member 212 , the N-type component 118 and the N-type element 120 may be doped regions formed in the P-type region 208 by ion implantation. The P-type dopant concentration of the P-type member 212 may be higher than the P-type dopant concentration of the P-type well 210 . The P-type member 212 can be a P-type heavily doped region (eg, a P+ doped region). The N-type component 118 and the N-type element 120 can be N-type heavily doped regions (eg, N+ doped regions).

電源箝制電路322(靜電放電箝制電路)電性連接在第一導電端VCCQ與第二導電端VSSQ之間。第一導電端VCCQ電性連接至N型區102的N型構件106。第一導電端VCCQ電性連接至P型元件216。第二導電端VSSQ電性連接至P型區208的P型構件212。第二導電端VSSQ電性連接至N型元件120。第一導電端VCCQ為電源輸入端。第二導電端VSSQ為接地端。導電墊DQ電性連接至P型部件214。導電墊DQ電性連接至N型部件118。 The power clamping circuit 322 (electrostatic discharge clamping circuit) is electrically connected between the first conductive terminal VCCQ and the second conductive terminal VSSQ. The first conductive terminal VCCQ is electrically connected to the N-type member 106 of the N-type region 102 . The first conductive terminal VCCQ is electrically connected to the P-type element 216 . The second conductive terminal VSSQ is electrically connected to the P-type member 212 of the P-type region 208 . The second conductive terminal VSSQ is electrically connected to the N-type element 120 . The first conductive terminal VCCQ is a power supply input terminal. The second conductive terminal VSSQ is a ground terminal. The conductive pad DQ is electrically connected to the P-type component 214 . The conductive pad DQ is electrically connected to the N-type component 118 .

N型區102可更包括N型深井124。N型井104和P型井210在N型深井124上。N型井104可圍繞在P型井210的側壁上。P型井226可圍繞在N型井104與N型深井124的側壁上。N型深井124與P型井210可在P型基底228上。 The N-type region 102 may further include an N-type deep well 124 . N-type well 104 and P-type well 210 are on N-type deep well 124 . The N-well 104 may surround the sidewall of the P-well 210 . The P-type well 226 can surround the sidewalls of the N-type well 104 and the N-type deep well 124 . The N-type deep well 124 and the P-type well 210 can be on the P-type substrate 228 .

如第1B圖所示，P型井226和N型元件120具有條紋形狀，且具有一致的延伸方向。P型部件214和P型構件212具有條紋形狀，且具有一致的延伸方向。P型井226和N型元件120的延伸方向垂直於P型部件214和P型構件212的延伸方向。N型構件106和N型部件118具有格紋形狀。格紋形狀的N型構件106圍繞條紋形狀的P型部件214。格紋形狀的N型部件118圍繞條紋形狀的P型構件212。 As shown in FIG. 1B, the P-type well 226 and the N-type element 120 have a stripe shape and have the same extending direction. The P-type component 214 and the P-type member 212 have a stripe shape and have a consistent extending direction. The extending direction of the P-type well 226 and the N-type element 120 is perpendicular to the extending direction of the P-type component 214 and the P-type member 212 . N-shaped member 106 and N-shaped component 118 have a checkered shape. A lattice-shaped N-type member 106 surrounds a stripe-shaped P-type component 214 . A lattice-shaped N-shaped member 118 surrounds a stripe-shaped P-shaped member 212 .

第1C圖繪示靜電放電防護電路其從導電墊DQ至第二導電端VSSQ的電流路徑PA和電流路徑PB。對於電流路徑PA(靜電放電路徑)，來自導電墊DQ的電流依序流過P型部件214、N型井104、N型構件106、第一導電端VCCQ與電源箝制電路322，然後流至第二導電端VSSQ。P型部件214與N型區102(包括N型井104與N型構件106)形成二極體(寄生二極體)。電流路徑PB(靜電放電路徑)包括P型部件214、N型區102、P型區208和N型元件120形成的矽控整流器(寄生矽控整流器)。矽控整流器的PNP結構的基極-射極(base-emitter)從導電墊DQ至第二導電端VSSQ係為順向的(forward)，其能促使矽控整流器開啟為導通狀態。導通狀態的矽控整流器使得來自導電墊DQ的電流能依序流過P型部件214、N型區102的N型井104、P型區208的P型井210和N型元件120而至第二導電端VSSQ，形成電流路徑PB。包括二極體和電源箝制電路的電流路徑PA可能會在輸入與輸出緩衝造成高的電壓降(voltage drop)。而包括矽控整流器(silicon controlled rectifier；SCR)的電 流路徑PB可降低電壓降。第1C圖的靜電放電防護電路的結構可類似第1A圖的靜電放電防護電路的結構。參照第1C圖所描述從導電墊DQ至第二導電端VSSQ的電流路徑PA和電流路徑PB不限發生於第1A圖與第1C圖所繪示的結構。 FIG. 1C shows the current path PA and the current path PB of the ESD protection circuit from the conductive pad DQ to the second conductive terminal VSSQ. For the current path PA (electrostatic discharge path), the current from the conductive pad DQ flows through the P-type component 214, the N-type well 104, the N-type member 106, the first conductive terminal VCCQ and the power supply clamping circuit 322 in sequence, and then flows to the second Two conductive terminals VSSQ. The P-type component 214 and the N-type region 102 (including the N-type well 104 and the N-type component 106 ) form a diode (parasitic diode). The current path PB (electrostatic discharge path) includes a silicon-controlled rectifier (parasitic silicon-controlled rectifier) formed by the P-type component 214 , the N-type region 102 , the P-type region 208 and the N-type element 120 . The base-emitter of the PNP structure of the silicon-controlled rectifier is forward from the conductive pad DQ to the second conductive terminal VSSQ, which can promote the silicon-controlled rectifier to be turned on. The silicon-controlled rectifier in the ON state enables the current from the conductive pad DQ to flow through the P-type component 214, the N-type well 104 of the N-type region 102, the P-type well 210 of the P-type region 208, and the N-type element 120 to the first The two conductive terminals VSSQ form a current path PB. The current path PA including diodes and power supply clamping circuits may cause high voltage drop between the input and output buffers. And including silicon controlled rectifier (silicon controlled rectifier; SCR) electric The flow path PB reduces voltage drop. The structure of the ESD protection circuit in FIG. 1C may be similar to the structure of the ESD protection circuit in FIG. 1A . The current path PA and the current path PB from the conductive pad DQ to the second conductive terminal VSSQ described with reference to FIG. 1C are not limited to the structures shown in FIG. 1A and FIG. 1C .

第1D圖繪示靜電放電防護電路其從第一導電端VCCQ至導電墊DQ的電流路徑PC和電流路徑PD。對於電流路徑PC(靜電放電路徑)，來自第一導電端VCCQ的電流依序流過電源箝制電路322、第二導電端VSSQ、P型構件212、P型井210、N型部件118，然後流至導電墊DQ。N型部件118與P型區208(包括P型井210與P型構件212)形成二極體(寄生二極體)。電流路徑PD(靜電放電路徑)包括P型元件216、N型區102、P型區208和N型部件118形成的矽控整流器(寄生矽控整流器)。矽控整流器(寄生矽控整流器)的NPN結構的基極-射極從第一導電端VCCQ至導電墊DQ係為順向的，其能促使矽控整流器開啟為導通狀態。導通狀態的矽控整流器使得來自第一導電端VCCQ的電流能依序流過P型元件216、N型區102的N型井104、P型區208的P型井210和N型部件118而至導電墊DQ，形成電流路徑PD。包括二極體和電源箝制電路的電流路徑PC可能會在輸入與輸出緩衝造成高的電壓降。而包括矽控整流器的電流路徑PD可降低電壓降。第1D圖的靜電放電防護電路的結構可類似第1A圖的靜電放電防護電路的結構。參照第1D圖所描述從第一導電端VCCQ至導電墊DQ的電流路徑PC和電流路徑PD不限發生於第1A圖與第1D圖所繪示的結構。 FIG. 1D shows the current path PC and the current path PD of the electrostatic discharge protection circuit from the first conductive terminal VCCQ to the conductive pad DQ. For the current path PC (electrostatic discharge path), the current from the first conductive terminal VCCQ flows through the power supply clamping circuit 322, the second conductive terminal VSSQ, the P-type member 212, the P-type well 210, the N-type component 118, and then flows to conductive pad DQ. The N-type component 118 and the P-type region 208 (including the P-type well 210 and the P-type member 212 ) form a diode (parasitic diode). The current path PD (electrostatic discharge path) includes a silicon-controlled rectifier (parasitic silicon-controlled rectifier) formed by the P-type element 216 , the N-type region 102 , the P-type region 208 and the N-type component 118 . The base-emitter of the NPN structure of the silicon-controlled rectifier (parasitic silicon-controlled rectifier) is forward from the first conductive terminal VCCQ to the conductive pad DQ, which can promote the silicon-controlled rectifier to be turned on. The silicon-controlled rectifier in the ON state allows the current from the first conductive terminal VCCQ to flow through the P-type element 216, the N-type well 104 of the N-type region 102, the P-type well 210 of the P-type region 208, and the N-type component 118 in sequence. To the conductive pad DQ, a current path PD is formed. The current path PC including diodes and power supply clamping circuits can cause high voltage drops between the input and output buffers. And the current path PD including the silicon controlled rectifier can reduce the voltage drop. The structure of the ESD protection circuit in FIG. 1D may be similar to the structure of the ESD protection circuit in FIG. 1A . The current path PC and the current path PD from the first conductive terminal VCCQ to the conductive pad DQ described with reference to FIG. 1D are not limited to the structures shown in FIG. 1A and FIG. 1D .

請參照第2A圖與第2B圖，其分別繪示第二實施例的靜電放電防護電路的剖面圖與上視圖。第二實施例與第一實施例的靜電放電防護電路的結構差異說明如下。P型區208的P型井210圍繞在N型區102的N型井104的側壁上。P型井210和N型井104在P型基底228上。第二實施例的靜電放電防護電路可包括參照第1C圖所描述從導電墊DQ至第二導電端VSSQ的電流路徑PA和電流路徑PB。第二實施例的靜電放電防護電路可包括參照第1D圖所描述從第一導電端VCCQ至導電墊DQ的電流路徑PC和電流路徑PD。 Please refer to FIG. 2A and FIG. 2B , which respectively depict a cross-sectional view and a top view of the electrostatic discharge protection circuit of the second embodiment. The structural differences between the ESD protection circuit of the second embodiment and the first embodiment are described as follows. The P-type well 210 of the P-type region 208 surrounds the sidewall of the N-type well 104 of the N-type region 102 . P-well 210 and N-well 104 are on P-type substrate 228 . The ESD protection circuit of the second embodiment may include a current path PA and a current path PB from the conductive pad DQ to the second conductive terminal VSSQ as described with reference to FIG. 1C . The ESD protection circuit of the second embodiment may include a current path PC and a current path PD from the first conductive terminal VCCQ to the conductive pad DQ as described with reference to FIG. 1D .

請參照第3圖，其繪示第三實施例的靜電放電防護電路的剖面圖。第三實施例與第二實施例的靜電放電防護電路的結構差異說明如下。N型區102的N型井104在N型深井124上。P型區208的P型井210圍繞在N型井104與N型深井124的側壁上。P型井210和N型深井124在P型基底228上。第三實施例的靜電放電防護電路的上視圖可類似第2B圖。第三實施例的靜電放電防護電路可包括參照第1C圖所描述從導電墊DQ至第二導電端VSSQ的電流路徑PA和電流路徑PB。第三實施例的靜電放電防護電路可包括參照第1D圖所描述從第一導電端VCCQ至導電墊DQ的電流路徑PC和電流路徑PD。 Please refer to FIG. 3 , which shows a cross-sectional view of the electrostatic discharge protection circuit of the third embodiment. The structural differences between the ESD protection circuit of the third embodiment and the second embodiment are explained as follows. The N-type well 104 of the N-type region 102 is on the N-type deep well 124 . The P-type well 210 of the P-type region 208 surrounds the sidewalls of the N-type well 104 and the N-type deep well 124 . The P-type well 210 and the N-type deep well 124 are on the P-type substrate 228 . The top view of the ESD protection circuit of the third embodiment may be similar to FIG. 2B . The ESD protection circuit of the third embodiment may include a current path PA and a current path PB from the conductive pad DQ to the second conductive terminal VSSQ as described with reference to FIG. 1C . The ESD protection circuit of the third embodiment may include a current path PC and a current path PD from the first conductive terminal VCCQ to the conductive pad DQ as described with reference to FIG. 1D .

請參照第4A圖與第4B圖，其分別繪示第四實施例的靜電放電防護電路的剖面圖與上視圖。第四實施例與第一實施例的靜電放電防護電路的結構差異說明如下。N型元件120在P型井226中。N型元件120藉由N型井104、P型井210與P型井226分開自 P型構件212和N型部件118。第四實施例的靜電放電防護電路可包括參照第1D圖所描述從第一導電端VCCQ至導電墊DQ的電流路徑PC和電流路徑PD。 Please refer to FIG. 4A and FIG. 4B , which respectively depict a cross-sectional view and a top view of the electrostatic discharge protection circuit of the fourth embodiment. The structural differences between the fourth embodiment and the ESD protection circuit of the first embodiment are described as follows. N-type element 120 is in P-type well 226 . The N-type element 120 is separated from the N-type well 104, the P-type well 210 and the P-type well 226. P-type member 212 and N-type component 118 . The ESD protection circuit of the fourth embodiment may include a current path PC and a current path PD from the first conductive terminal VCCQ to the conductive pad DQ as described with reference to FIG. 1D .

請參照第5A圖與第5B圖，其分別繪示第五實施例的靜電放電防護電路的剖面圖與上視圖。第五實施例與第一實施例的靜電放電防護電路的結構差異說明如下。P型元件216在N型井130中。N型井130與N型井104藉由P型井210互相分離。P型元件216藉由N型井130、N型井104與P型井210分開自N型構件106和P型部件214。P型井210圍繞在N型井130的側壁上。P型井210圍繞在N型井104的側壁上。P型井210、N型井104、N型井130在P型基底228上。第五實施例的靜電放電防護電路可包括參照第1C圖所描述從導電墊DQ至第二導電端VSSQ的電流路徑PA和電流路徑PB。 Please refer to FIG. 5A and FIG. 5B , which respectively show a cross-sectional view and a top view of the electrostatic discharge protection circuit of the fifth embodiment. The structural differences between the fifth embodiment and the ESD protection circuit of the first embodiment are described as follows. P-type element 216 is in N-type well 130 . The N-type well 130 is separated from the N-type well 104 by the P-type well 210 . P-type element 216 is separated from N-type component 106 and P-type component 214 by N-type well 130 , N-type well 104 and P-type well 210 . The P-type well 210 surrounds the sidewall of the N-type well 130 . The P-well 210 surrounds the sidewall of the N-well 104 . The P-type well 210 , the N-type well 104 , and the N-type well 130 are on the P-type substrate 228 . The ESD protection circuit of the fifth embodiment may include a current path PA and a current path PB from the conductive pad DQ to the second conductive terminal VSSQ as described with reference to FIG. 1C .

請參照第6圖，其繪示第六實施例的靜電放電防護電路的上視圖。第6圖與第1B圖的靜電放電防護電路的上視圖的差異說明如下。P型井226、N型構件106、P型部件214、N型部件118、P型構件212和N型元件120皆具有條紋形狀，且具有一致的延伸方向。N型構件106位在P型部件214與P型元件216之間。P型構件212位在N型部件118與N型元件120之間。第六實施例的靜電放電防護電路的上視圖可類似第1A圖。 Please refer to FIG. 6 , which shows a top view of the electrostatic discharge protection circuit of the sixth embodiment. The differences between the top views of the ESD protection circuit in FIG. 6 and FIG. 1B are explained as follows. The P-type well 226 , the N-type member 106 , the P-type member 214 , the N-type member 118 , the P-type member 212 and the N-type element 120 all have a stripe shape and have a consistent extending direction. The N-type member 106 is located between the P-type component 214 and the P-type element 216 . The P-type member 212 is located between the N-type component 118 and the N-type element 120 . The top view of the ESD protection circuit of the sixth embodiment may be similar to FIG. 1A.

請參照第7A圖與第7B圖，其分別繪示第七實施例的靜電放電防護電路的剖面圖與上視圖。第七實施例與第一實施例的靜電放電防護電路的結構差異說明如下。N型構件106位在P型 部件214與P型元件216之間。N型元件120位在N型部件118與P型構件212之間。如第7B圖所示，P型井226、N型構件106、P型部件214、N型部件118、P型構件212和N型元件120皆具有條紋形狀，且具有一致的延伸方向。第七實施例的靜電放電防護電路可包括參照第1C圖所描述從導電墊DQ至第二導電端VSSQ的電流路徑PA和電流路徑PB。第七實施例的靜電放電防護電路可包括參照第1D圖所描述從第一導電端VCCQ至導電墊DQ的電流路徑PC和電流路徑PD。 Please refer to FIG. 7A and FIG. 7B , which respectively show a cross-sectional view and a top view of the electrostatic discharge protection circuit of the seventh embodiment. The structural differences between the seventh embodiment and the ESD protection circuit of the first embodiment are explained as follows. N-type member 106 in the P-type Between component 214 and P-type element 216 . The N-type element 120 is located between the N-type component 118 and the P-type member 212 . As shown in FIG. 7B , the P-type well 226 , the N-type component 106 , the P-type component 214 , the N-type component 118 , the P-type component 212 and the N-type component 120 all have a stripe shape and have a consistent extending direction. The ESD protection circuit of the seventh embodiment may include a current path PA and a current path PB from the conductive pad DQ to the second conductive terminal VSSQ as described with reference to FIG. 1C . The ESD protection circuit of the seventh embodiment may include a current path PC and a current path PD from the first conductive terminal VCCQ to the conductive pad DQ as described with reference to FIG. 1D .

請參照第8A圖與第8B圖，其分別繪示第八實施例的靜電放電防護電路的剖面圖與上視圖。第八實施例與第七實施例的靜電放電防護電路的結構差異說明如下。P型元件216位在N型構件106與P型部件214之間。P型構件212位在N型部件118與N型元件120之間。第八實施例的靜電放電防護電路可包括參照第1C圖所描述從導電墊DQ至第二導電端VSSQ的電流路徑PA和電流路徑PB。第八實施例的靜電放電防護電路可包括參照第1D圖所描述從第一導電端VCCQ至導電墊DQ的電流路徑PC和電流路徑PD。 Please refer to FIG. 8A and FIG. 8B , which respectively show a cross-sectional view and a top view of the electrostatic discharge protection circuit of the eighth embodiment. The structural differences between the eighth embodiment and the seventh embodiment of the electrostatic discharge protection circuit are described as follows. The P-type element 216 is located between the N-type component 106 and the P-type component 214 . The P-type member 212 is located between the N-type component 118 and the N-type element 120 . The ESD protection circuit of the eighth embodiment may include a current path PA and a current path PB from the conductive pad DQ to the second conductive terminal VSSQ as described with reference to FIG. 1C . The ESD protection circuit of the eighth embodiment may include a current path PC and a current path PD from the first conductive terminal VCCQ to the conductive pad DQ as described with reference to FIG. 1D .

請參照第9A圖與第9B圖，其分別繪示第九實施例的靜電放電防護電路的剖面圖與上視圖。第九實施例與第八實施例的靜電放電防護電路的結構差異說明如下。N型元件120位在N型部件118與P型構件212之間。第九實施例的靜電放電防護電路可包括參照第1C圖所描述從導電墊DQ至第二導電端VSSQ的電流路徑PA和電流路徑PB。第九實施例的靜電放電防護電路可包括參 照第1D圖所描述從第一導電端VCCQ至導電墊DQ的電流路徑PC和電流路徑PD。 Please refer to FIG. 9A and FIG. 9B , which respectively show a cross-sectional view and a top view of the electrostatic discharge protection circuit of the ninth embodiment. The structural differences between the electrostatic discharge protection circuits of the ninth embodiment and the eighth embodiment are explained as follows. The N-type element 120 is located between the N-type component 118 and the P-type member 212 . The ESD protection circuit of the ninth embodiment may include a current path PA and a current path PB from the conductive pad DQ to the second conductive terminal VSSQ as described with reference to FIG. 1C . The electrostatic discharge protection circuit of the ninth embodiment may include reference The current path PC and the current path PD from the first conductive terminal VCCQ to the conductive pad DQ are described in FIG. 1D.

綜上所述，雖然本發明已以實施例揭露如上，然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。 To sum up, although the present invention has been disclosed by the above embodiments, it is not intended to limit the present invention. Those skilled in the art of the present invention can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the scope of the appended patent application.

102:N型區 102: N-type area

104:N型井 104:N type well

106:N型構件 106:N type component

118:N型部件 118: N type parts

120:N型元件 120: N-type components

124:N型深井 124: N type deep well

208:P型區 208: P-type area

210:P型井 210:P type well

212:P型構件 212: P-shaped component

214:P型部件 214:P type parts

216:P型元件 216: P-type components

226:P型井 226:P type well

228:P型基底 228: P-type base

322:電源箝制電路 322: Power clamping circuit

DQ:導電墊 DQ: conductive pad

VCCQ:第一導電端 VCCQ: the first conductive terminal

VSSQ:接地端 VSSQ: ground terminal

PA、PB:電流路徑 PA, PB: current path

Claims (10)

一種靜電放電防護電路，包括：一N型井；一P型部件，在該N型井中；一N型構件，在該N型井中；一P型井，該P型井鄰接於該N型井；一N型元件，在該P型井中；一P型構件，在該P型井中；一第一導電端，電性連接至該N型構件；一第二導電端，電性連接至該P型構件與該N型元件；一電源箝制電路，電性連接在該第一導電端與該第二導電端之間；以及一導電墊，電性連接至該P型部件，其中該靜電放電防護電路包括從該導電墊至該第二導電端的一第一電流路徑和一第二電流路徑，該第一電流路徑不同於該第二電流路徑。 An electrostatic discharge protection circuit, comprising: an N-type well; a P-type component in the N-type well; an N-type component in the N-type well; a P-type well, the P-type well adjacent to the N-type well ; an N-type element, in the P-type well; a P-type member, in the P-type well; a first conductive end, electrically connected to the N-type member; a second conductive end, electrically connected to the P type component and the N-type element; a power supply clamping circuit, electrically connected between the first conductive end and the second conductive end; and a conductive pad, electrically connected to the P-type component, wherein the electrostatic discharge protection The circuit includes a first current path and a second current path from the conductive pad to the second conductive end, the first current path is different from the second current path. 如請求項1所述的靜電放電防護電路，其中在該第二電流路徑中，靜電放電的電流依序流過該導電墊、該P型部件、該N型井、該P型井、該N型元件與該第二導電端。 The electrostatic discharge protection circuit according to claim 1, wherein in the second current path, the electrostatic discharge current flows through the conductive pad, the P-type component, the N-type well, the P-type well, and the N-type well in sequence. type element and the second conductive terminal. 如請求項1所述的靜電放電防護電路，其中在該第一電流路徑中，靜電放電的電流依序流過該導電墊、 該P型部件、該N型井、該N型構件、該第一導電端、該電源箝制電路與該第二導電端。 The electrostatic discharge protection circuit according to claim 1, wherein in the first current path, the electrostatic discharge current flows through the conductive pad, The P-type component, the N-type well, the N-type member, the first conductive end, the power clamping circuit and the second conductive end. 如請求項1所述的靜電放電防護電路，該靜電放電防護電路包括一P型區與一N型區，該P型區包括該P型井與該P型構件，該N型區包括該N型井及該N型構件，該P型部件、該N型區、該P型區和該N型元件形成一矽控整流器。 The electrostatic discharge protection circuit according to claim 1, the electrostatic discharge protection circuit includes a P-type region and an N-type region, the P-type region includes the P-type well and the P-type member, and the N-type region includes the N The well, the N-type member, the P-type component, the N-type region, the P-type region and the N-type element form a silicon controlled rectifier. 一種靜電放電防護電路，包括：一P型井；一N型部件，在該P型井中；一P型構件，在該P型井中；一N型井，該P型井鄰接於該N型井；一P型元件，在該N型井中；一N型構件，在該N型井中；一第一導電端，電性連接至該P型元件與該N型構件；一第二導電端，電性連接至該P型構件；一電源箝制電路，電性連接在該第一導電端與該第二導電端之間；以及一導電墊，電性連接至該N型部件，其中該靜電放電防護電路包括從該第一導電端至該導電墊的一第三電流路徑和一第四電流路徑，該第三電流路徑不同於該第四電流路徑。 An electrostatic discharge protection circuit, comprising: a P-type well; an N-type component in the P-type well; a P-type member in the P-type well; an N-type well, the P-type well adjacent to the N-type well ; a P-type element, in the N-type well; an N-type member, in the N-type well; a first conductive end, electrically connected to the P-type element and the N-type member; a second conductive end, electrically connected to the P-type component; a power supply clamping circuit, electrically connected between the first conductive end and the second conductive end; and a conductive pad, electrically connected to the N-type component, wherein the electrostatic discharge protection The circuit includes a third current path and a fourth current path from the first conductive end to the conductive pad, and the third current path is different from the fourth current path. 如請求項5所述的靜電放電防護電路，其中該P型構件、該P型井和該N型部件形成一二極體。 The electrostatic discharge protection circuit as claimed in claim 5, wherein the P-type component, the P-type well and the N-type component form a diode. 如請求項5所述的靜電放電防護電路，其中在該第三電流路徑中，靜電放電的電流依序流過該第一導電端、該電源箝制電路、該第二導電端、該P型構件、該P型井、該N型部件與該導電墊。 The electrostatic discharge protection circuit according to claim 5, wherein in the third current path, the electrostatic discharge current flows through the first conductive terminal, the power supply clamping circuit, the second conductive terminal, and the P-type member in sequence , the P-type well, the N-type component and the conductive pad. 如請求項5所述的靜電放電防護電路，其中該靜電放電防護電路包括一P型區與一N型區，該P型區包括該P型井與該P型構件，該N型區包括該N型井及該N型構件，該P型元件、該N型區、該P型區和該N型部件形成一矽控整流器。 The ESD protection circuit according to claim 5, wherein the ESD protection circuit includes a P-type region and an N-type region, the P-type region includes the P-type well and the P-type member, and the N-type region includes the The N-type well, the N-type component, the P-type element, the N-type region, the P-type region and the N-type component form a silicon controlled rectifier. 如請求項5所述的靜電放電防護電路，其中在該第四電流路徑中，靜電放電的電流依序流過該第一導電端、該P型元件、該N型井、該P型井、該N型部件與該導電墊。 The electrostatic discharge protection circuit according to claim 5, wherein in the fourth current path, the electrostatic discharge current flows sequentially through the first conductive terminal, the P-type element, the N-type well, the P-type well, The N-type component and the conductive pad. 如請求項1或請求項5所述的靜電放電防護電路，其中該第一導電端為電源輸入端，該第二導電端為接地端。 The electrostatic discharge protection circuit according to claim 1 or claim 5, wherein the first conductive terminal is a power supply input terminal, and the second conductive terminal is a ground terminal.
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201203507A (en) * 2010-07-15 2012-01-16 Amazing Microelectronic Corp Lateral transient voltage suppressor with ultra low capacitance

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201203507A (en) * 2010-07-15 2012-01-16 Amazing Microelectronic Corp Lateral transient voltage suppressor with ultra low capacitance

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