TWI803242B - Electronic device and manufacturing method thereof - Google Patents
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- TWI803242B TWI803242B TW111109545A TW111109545A TWI803242B TW I803242 B TWI803242 B TW I803242B TW 111109545 A TW111109545 A TW 111109545A TW 111109545 A TW111109545 A TW 111109545A TW I803242 B TWI803242 B TW I803242B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/54—Providing fillings in containers, e.g. gas fillings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
Description
本發明是有關於一種電子裝置及其製造方法,且特別是有關於一種可有效地控制底部填充膠層面積的電子裝置及其製造方法。The present invention relates to an electronic device and a manufacturing method thereof, and in particular to an electronic device capable of effectively controlling the area of an underfill adhesive layer and a manufacturing method thereof.
一般來說,電子元件與基板接合(bonding)之後,會進行底部填充制程,以在電子元件與基板的接合處的外側以噴射(jetting process)或點膠(dispensing process)的方式,讓底部填充膠層借由虹吸現象進入電子元件與基板之間的空隙,以包覆接墊及焊球並固定電子元件與基板 之間的相對位置。然而,底部填充膠層在基板上呈現自由流動,因而不易控制其面積,進而造成材料浪費,甚至產生電容(capacitance)/電感(inductance)/電磁干擾(electromagnetic interference)的現象。Generally speaking, after the electronic components are bonded to the substrate, an underfill process is performed to fill the underfill on the outside of the junction between the electronic components and the substrate by means of jetting process or dispensing process. The glue layer enters the gap between the electronic component and the substrate through the siphon phenomenon, so as to cover the pads and solder balls and fix the relative position between the electronic component and the substrate. However, the underfill adhesive layer flows freely on the substrate, so it is difficult to control its area, resulting in material waste, and even capacitance/inductance/electromagnetic interference.
本發明提供一種電子裝置及其製造方法,可有效地控制底部填充膠層的面積。The invention provides an electronic device and its manufacturing method, which can effectively control the area of the bottom filling adhesive layer.
本發明的電子裝置包括基板、電子元件、底部填充膠層以及保護結構。電子元件設置於基板上。至少一部分的底部填充膠層設置於基板與電子元件之間。底部填充膠層的厚度不大於基板的表面至電子元件的上表面的高度。保護結構設置於基板上且鄰近底部填充膠層。The electronic device of the present invention includes a substrate, an electronic component, an underfill glue layer and a protection structure. The electronic components are arranged on the substrate. At least a part of the underfill glue layer is disposed between the substrate and the electronic component. The thickness of the underfill glue layer is not greater than the height from the surface of the substrate to the upper surface of the electronic component. The protection structure is disposed on the substrate and adjacent to the underfill adhesive layer.
本發明的電子裝置的製造方法,其包括以下步驟。提供基板。定義基板的限制區域。接合電子元件於基板上。形成底部填充膠層於基板上。The manufacturing method of the electronic device of the present invention includes the following steps. Substrate provided. Defines the restricted area of the substrate. Bonding electronic components on the substrate. An underfill adhesive layer is formed on the substrate.
基於上述,在本揭露的實施例中,保護結構設置於基板上且鄰近底部填充膠層,借此可限制底部填充膠層的範圍,而使本揭露的電子裝置可有效地控制底部填充膠層的面積,進而使底部填充膠層的用量及形狀可具有一致性。Based on the above, in the embodiments of the present disclosure, the protection structure is disposed on the substrate and adjacent to the underfill layer, thereby limiting the range of the underfill layer, so that the electronic device of the present disclosure can effectively control the underfill layer. area, so that the amount and shape of the underfill layer can be consistent.
通過參考以下的詳細描述並同時結合附圖可以理解本揭露,須注意的是,為了使讀者能容易瞭解及為了圖式的簡潔,本揭露中的多張圖式只繪出電子裝置的一部分,且圖式中的特定元件並非依照實際比例繪圖。此外,圖中各元件的數量及尺寸僅作為示意,並非用來限制本揭露的範圍。The present disclosure can be understood by referring to the following detailed description combined with the accompanying drawings. It should be noted that, in order to make the readers understand easily and for the simplicity of the drawings, several drawings in the present disclosure only depict a part of the electronic device. Also, certain elements in the drawings are not drawn to actual scale. In addition, the number and size of each component in the figure are only for illustration, and are not intended to limit the scope of the present disclosure.
本揭露通篇說明書與所附的權利要求中會使用某些詞匯來指稱特定元件。本領域技術人員應理解,電子設備製造商可能會以不同的名稱來指稱相同的元件。本文並不意在區分那些功能相同但名稱不同的元件。Certain terms will be used throughout the specification and appended claims of this disclosure to refer to particular elements. Those skilled in the art should understand that electronic device manufacturers may refer to the same element by different names. This document does not intend to distinguish between those elements that have the same function but have different names.
在下文說明書與權利要求書中,「含有」與「包括」等詞為開放式詞語,因此其應被解釋為「含有但不限定為…」之意。In the description and claims below, words such as "comprising" and "comprising" are open-ended words, so they should be interpreted as meaning "including but not limited to...".
此外,實施例中可能使用相對性的用語,例如「下方」或「底部」及「上方」或「頂部」,以描述圖式的一個元件對於另一元件的相對關係。能理解的是,如果將圖式的裝置翻轉使其上下顛倒,則所敘述在「下方」側的元件將會成為在「上方」側的元件。In addition, relative terms such as "below" or "bottom" and "upper" or "top" may be used in the embodiments to describe the relative relationship of one element to another element in the drawings. It will be appreciated that if the illustrated device is turned over so that it is upside down, elements described as being on the "lower" side will then become elements on the "upper" side.
在本揭露一些實施例中,關於接合、連接之用語例如「連接」、「互連」等,除非特別定義,否則可指兩個結構系直接接觸,或者亦可指兩個結構並非直接(間接)接觸,其中有其它結構設於此兩個結構之間。且此關於接合、連接之用語亦可包括兩個結構都可移動,或者兩個結構都固定之情況。此外,用語「耦合」包含兩個結構之間系通過直接或間接電性連接的手段來傳遞能量,或是兩個分離的結構之間系以相互感應的手段來傳遞能量。In some embodiments of the present disclosure, terms such as “connected” and “interconnected” related to bonding and connection, unless otherwise specified, may mean that two structures are in direct contact, or may also mean that two structures are not directly (indirectly). ) contact with other structures interposed between the two structures. And the terms about joining and connecting may also include the situation that both structures are movable, or both structures are fixed. In addition, the term "coupled" includes the transfer of energy between two structures by means of direct or indirect electrical connection, or the transfer of energy between two separate structures by means of mutual induction.
應瞭解到,當元件或膜層被稱為在另一個元件或膜層「上」或「連接到」另一個元件或膜層時,它可以直接在此另一元件或膜層上或直接連接到此另一元件或膜層,或者兩者之間存在有插入的元件或膜層(非直接情況)。相反地,當元件被稱為「直接」在另一個元件或膜層「上」或「直接連接到」另一個元件或膜層時,兩者之間不存在有插入的元件或膜層。It will be understood that when an element or film is referred to as being "on" or "connected to" another element or film, it can be directly on or directly connected to the other element or film To another element or layer, or there is an intervening element or layer between the two (indirect cases). In contrast, when an element is referred to as being "directly on" or "directly connected to" another element or film, there are no intervening elements or layers present.
術語「大約」、「等於」、「相等」或「相同」、「實質上」或「大致上」一般解釋為在所給定的值或範圍的20%以內,或解釋為在所給定的值或範圍的10%、5%、3%、2%、1%或0.5%以內。The terms "about", "equal", "equal" or "same", "substantially" or "substantially" are generally interpreted as being within 20% of a given value or range, or as being within 20% of a given value or range Within 10%, 5%, 3%, 2%, 1%, or 0.5% of a value or range.
如本文所使用,用語「膜(film)」及/或「層(layer)」可指任何連續或不連續的結構及材料(諸如,借由本文所揭示之方法沉積之材料)。例如,膜及/或層可包括二維材料、三維材料、奈米粒子、或甚至部分或完整分子層、或部分或完整原子層、或原子及/或分子團簇(clusters)。膜或層可包含具有針孔(pinholes)的材料或層,其可以是至少部分連續的。As used herein, the terms "film" and/or "layer" may refer to any continuous or discontinuous structures and materials (such as materials deposited by the methods disclosed herein). For example, films and/or layers may comprise two-dimensional materials, three-dimensional materials, nanoparticles, or even partial or complete molecular layers, or partial or complete atomic layers, or clusters of atoms and/or molecules. The film or layer may comprise a material or layer having pinholes, which may be at least partially continuous.
雖然術語第一、第二、第三…可用以描述多種組成元件,但組成元件並不以此術語為限。此術語僅用於區別說明書內單一組成元件與其他組成元件。權利要求中可不使用相同術語,而依照權利要求中元件宣告的順序以第一、第二、第三…取代。因此,在下文說明書中,第一組成元件在權利要求中可能為第二組成元件。Although the terms first, second, third... may be used to describe various constituent elements, the constituent elements are not limited to this term. This term is only used to distinguish a single constituent element from other constituent elements in the specification. The same terms may not be used in the claims, but are replaced by first, second, third... in the order in which elements are declared in the claims. Therefore, in the following description, a first constituent element may be a second constituent element in the claims.
除非另外定義,在此使用的全部用語(包括技術及科學用語)具有與此篇揭露所屬之一般技藝者所通常理解的相同涵義。能理解的是這些用語,例如在通常使用的字典中定義的用語,應被解讀成具有一與相關技術及本揭露的背景或上下文一致的意思,而不應以一理想化或過度正式的方式解讀,除非在此特別定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the related art and the present disclosure, and not in an idealized or overly formal manner Interpretation, unless specifically defined herein.
須知悉的是,以下所舉實施例可以在不脫離本揭露的精神下,將數個不同實施例中的技術特徵進行替換、重組、混合以完成其他實施例。It should be noted that in the following embodiments, without departing from the spirit of the present disclosure, technical features in several different embodiments may be replaced, reorganized, and mixed to complete other embodiments.
本揭露的電子裝置可包括顯示裝置、天線裝置、感測裝置、發光裝置、和/或拼接裝置,但不以此為限。電子裝置可包括可彎折或可撓式電子裝置。電子裝置可包括電子元件。電子元件可包括被動元件與主動元件,例如電容、電阻、電感、可變電容、濾波器、二極體(diode)、晶體管(transistors)、感應器、微機電系統元件(MEMS)、液晶晶片(liquid crystal chip)等,但不限於此。二極體可包括發光二極體或光電二極體。發光二極體可例如包括有機發光二極體(organic light emitting diode,OLED)、次毫米發光二極體(mini LED)、微發光二極體(micro LED)、量子點發光二極體(quantum dot LED)、螢光(fluorescence)、磷光(phosphor)或其他適合之材料、或上述組合,但不以此為限。感應器可例如包括電容式感應器(capacitive sensors)、光學式感應器(optical sensors)、電磁式感應器(electromagnetic sensors)、指紋感應器(fingerprint sensor,FPS)、觸控感應器(touch sensor)、天線(antenna)、或觸控筆(pen sensor)等,但不限於此。下文將以顯示裝置做為電子裝置以說明本揭露內容,但本揭露不以此為限。The electronic device of the present disclosure may include a display device, an antenna device, a sensing device, a light emitting device, and/or a splicing device, but is not limited thereto. Electronic devices may include bendable or flexible electronic devices. Electronic devices may include electronic components. Electronic components may include passive components and active components, such as capacitors, resistors, inductors, variable capacitors, filters, diodes, transistors, inductors, MEMS, liquid crystal chips ( liquid crystal chip), etc., but not limited thereto. The diodes may include light emitting diodes or photodiodes. The light emitting diodes may, for example, include organic light emitting diodes (organic light emitting diodes, OLEDs), submillimeter light emitting diodes (mini LEDs), micro light emitting diodes (micro LEDs), quantum dot light emitting diodes (quantum dot LED), fluorescence (fluorescence), phosphorescence (phosphor) or other suitable materials, or a combination of the above, but not limited thereto. The sensors may, for example, include capacitive sensors, optical sensors, electromagnetic sensors, fingerprint sensors (fingerprint sensor, FPS), touch sensors (touch sensor) , antenna (antenna), or stylus (pen sensor), etc., but not limited thereto. In the following, a display device is used as an electronic device to illustrate the content of the disclosure, but the disclosure is not limited thereto.
現將詳細地參考本揭露的示範性實施例,示範性實施例的實例說明於附圖中。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and descriptions to refer to the same or like parts.
圖1是本揭露的一實施例的一種電子裝置的剖面示意圖。請參考圖1,在本實施例中,電子裝置100a包括基板110、電子元件120、底部填充膠層130a以及保護結構140a。電子元件120設置於基板110上。至少一部分的底部填充膠層130a設置於基板110與電子元件120之間。底部填充膠層130a的厚度T不大於基板110的表面S至電子元件120的上表面121的高度H。保護結構140a設置於基板110上且鄰近底部填充膠層130a。FIG. 1 is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure. Please refer to FIG. 1 , in the present embodiment, an electronic device 100 a includes a
詳細來說,在本實施例中,基板110例如是玻璃基板、玻纖(FR4)基板、可撓曲塑膠基板、薄膜基板、軟性基板或其他適當的基板,但不限於此。基板上可設置薄膜晶體管或其它驅動電路。基板110包括彼此分離的多個第一接墊112,其中第一接墊112可配置於基板110的表面S上,於此並不加以限制。於另一實施例中,基板表面具有凹陷部,第一接墊112亦可設置在凹陷部,此仍屬於本揭露所欲保護的範圍。In detail, in this embodiment, the
電子元件120例如是發光二極體晶片(LED die),它可以是由矽(Si)、砷化鎵(GaAs)、氮化鎵(GaN)、碳化矽(SiC) 、藍寶石(Sapphire)或玻璃基板所製成的晶片,但不限於此。於另一實施例中,電子元件120亦可以是半導體封裝元件,例如是球格陣列式(Ball Grid Array, BGA)封裝元件、晶片尺寸封裝(Chip Size Package,CSP)元件、覆晶晶片或2.5維/3維(2.5D/3D)半導體封裝元件,但不限於此。於另一實施例中,電子元件120也可以是任何一種晶片,例如是集成電路(IC)、晶體管(transistors)、可控矽整流器、閥門(valves)、薄膜晶體管(Thin Film Transistors)、電容、電感、可變電容、濾波器、電阻、二極體、微機電系統元件(MEMS)、液晶晶片(liquid crystal chip)等,但不限於此。電子元件120包括彼此分離的多個第二接墊122,其中第一接墊112與第二接墊122透過多個焊球150而結構性且電性連接在一起。意即,本實施例的電子元件120例如是以覆晶的方式接合於基板110上。The
如圖1所示,底部填充膠層130a設置於基板110與電子元件120之間,且覆蓋第一接墊112、第二接墊122以及焊球150。底部填充膠層130a可用以增加電子元件120與基板110之間的黏著性,且可以固定第一接墊112、焊球150以及第二接墊122彼此之間的相對位置。於一實施例中,在電子裝置100a例如為天線裝置、感測裝置的情況下,當底部填充膠層130a的厚度T不大於基板110的表面S至電子元件120的上表面121的高度H時,則可允許高頻訊號通過並減少高頻訊號的損耗。另一未繪示的實施例中,若為進一步減訊號損耗量,于電子元件下方處底部填充膠層的厚度可小於基板的表面至電子元件的下表面的高度。於另一未繪示的實施例中,底部填充膠層亦可完全包覆電子元件,在電子元件例如為發光二極體的情況下,可使電子裝置具有較佳的光型及聚光效果。As shown in FIG. 1 , the
此外,本實施例的保護結構140a的設置可在基板110上定義出限制區域A,其中保護結構140a例如是封閉性的結構,如連續性山形壩(mountain-shaped dam)或連續性擋牆(wall),可圍繞底部填充膠層130a,以限制底部填充膠層130a的區域。換言之,底部填充膠層130a是被限制地位於限制區域A。於一實施例中,保護結構140a的材質可例如是有機材料,但不限於此。保護結構140a的俯視形狀可例如是中空矩形,而保護結構140a的厚度可例如是1微米(μm)至100微米,但不限於此。In addition, the arrangement of the
在製造上,請再參考圖1,首先,提供基板110,其中基板110上包括第一接墊112。第一接墊112的材料可以是化學鎳金(縮寫為ENIG:Electroless nickel immersion gold)或是其它導電材料。接著,形成保護結構140a於基板110上,以定義基板110的限制區域A。接著,接合電子元件120於基板110上,其中電子元件120包括第二接墊122,且第二接墊122的材料可以是化學鎳金(縮寫為ENIG:Electroless nickel immersion gold)或是其它導電材料。第一接墊112與第二接墊122透過多個焊球150而結構性且電性連接在一起。須說明的是,本揭露並不限制形成保護結構140a於基板110上及接合電子元件120於基板110上的順序。也就是說,可先形成保護結構140a於基板110上,之後再接合電子元件120於基板110上;或者是,先接合電子元件120於基板110上,之後再形成保護結構140a於基板110上。最後,形成底部填充膠層130a於基板110上,其中底部填充膠層130a設置於基板110與電子元件120之間,且覆蓋第一接墊112、第二接墊122以及焊球150。至此,以完成電子裝置100a的製作。In manufacturing, please refer to FIG. 1 again. Firstly, a
簡言之,本實施例的保護結構140a可以限制底部填充膠層130a的面積,而使底部填充膠層130a的用量及形狀具有一致性。考量應用於高頻傳輸的電子裝置100a,高頻訊號於電子裝置100a的材料損耗需一致。也就是說,本實施例是通過設置保護結構140a,來調整/限制底部填充膠層130a的用量,使本實施例的的電子裝置100a可有效地控制底部填充膠層130a的面積。In short, the
在此須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並省略相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。It should be noted here that the following embodiments use the component numbers and partial content of the previous embodiments, wherein the same numbers are used to denote the same or similar components, and descriptions of the same technical content are omitted. For the description of omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
圖2A是本揭露的一實施例的一種電子裝置的俯視示意圖。請同時參考圖1與圖2A,電子裝置100b與圖1的電子裝置100a相似,兩者的差異在於:在本實施例中,考慮到均勻性,保護結構140b可以是非封閉性的結構。詳細來說,本實施例的保護結構140b具有多個開口145b(示意地繪示二個開口145b),且包括彼此分離的多個擋牆圖案142b(示意地繪示二個擋牆圖案142b)。擋牆圖案142b的尺寸可相同,且可呈鏡射結構,但不以此為限。開口145b位於擋牆圖案142b之間,其中開口145b的形狀例如是矩形,而部分底部填充膠層130b延伸至開口145b內。開口145b的設計除了可容置溢膠之外,亦具有排氣的功能,可排除存在於底部填充膠層130b內的空氣。FIG. 2A is a schematic top view of an electronic device according to an embodiment of the present disclosure. Please refer to FIG. 1 and FIG. 2A at the same time. The
圖2B是本揭露的另一實施例的一種電子裝置的俯視示意圖。請同時參考圖2A與圖2B,電子裝置100c與圖2A的電子裝置100b相似,兩者的差異在於:在本實施例中,保護結構140c具有四個開口145c,且包括彼此分離的四個擋牆圖案142c。擋牆圖案142c的尺寸可相同,其中四個擋牆圖案142c排列成例如是卐,但不以此為限。開口145c位於擋牆圖案142c之間,其中開口145c的口徑由鄰近底部填充膠層130b往遠離底部填充膠層130b的方向逐漸變大而呈現例如是梯形,而部分底部填充膠層130b延伸至開口145c內。開口145c的設計除了可容置溢膠之外,亦具有排氣的功能,可排除存在於底部填充膠層130b內的空氣。FIG. 2B is a schematic top view of an electronic device according to another embodiment of the present disclosure. Please refer to FIG. 2A and FIG. 2B at the same time. The
於另一未繪示的實施例中,考慮到潤濕條件(wetting conditions),保護結構的多個擋牆圖案亦可具有不同尺寸,或者是,這些擋牆圖案的形狀亦可不相同且不對稱,此仍屬於本揭露所欲保護的範圍。In another unillustrated embodiment, considering the wetting conditions, the multiple retaining wall patterns of the protective structure may also have different sizes, or the shapes of these retaining wall patterns may also be different and asymmetrical , which still belongs to the scope of protection intended by this disclosure.
圖3是本揭露的另一實施例的一種電子裝置的俯視示意圖。請同時參考圖1與圖3,電子裝置100d與圖1的電子裝置100a相似,兩者的差異在於:在本實施例中,當保護結構140d的厚度不足時,電子裝置100d還包括金屬層160,設置於基板110上且位於保護結構140d與基板110之間,以避免底部填充膠層130d溢出。於一實施例中,保護結構140d於基板110上的正投影完全重迭於金屬層160在基板110上的正投影,其中金屬層160在基板110上的正投影小於保護結構140d於基板110上的正投影,但不以此為限。FIG. 3 is a schematic top view of an electronic device according to another embodiment of the present disclosure. Please refer to FIG. 1 and FIG. 3 at the same time. The
圖4A至圖4C是本揭露的一實施例的一種電子裝置的製造方法的剖面示意圖。首先,請參考圖4A,提供基板110,其中基板110上包括第一接墊112。接著,接合電子元件120於基板110上,其中電子元件120包括第二接墊122,且第一接墊112與第二接墊122透過焊球150而結構性且電性連接在一起。接著,配置鋼板P於基板110的部分表面S上,其中鋼板P環繞電子元件120的周圍。接著,以能量光束L來照射暴露於鋼板P外的電子元件120與基板110。此處,能量光束L例如是極紫外光(Extreme Ultra Violet, EUV)或等離子(Plasma),可有效地降低基板110的接觸角(contact angle),以增加後續底部填充膠層130a(請參考圖4C)的潤濕性。之後,請參考圖4B,移除鋼板P而於基板110上定義出限制區域A。也就是說,本實施例定義基板110的限制區域A的步驟是以能量光束L來處理基板110的表面S,以對基板110的部分區域(即限制區域A)進行表面改質。最後,請同時參考圖4B與圖4C,形成底部填充膠層130a於基板110上,其中底部填充膠層130a可容易地透過虹吸現象而流到限制區域A,以覆蓋第一接墊112、第二接墊122以及焊球150,而底部填充膠層130a不會流到未進行表面改質的區域(即限制區域A之外的區域)。至此,已完成電子裝置100e的製作。4A to 4C are schematic cross-sectional views of a method for manufacturing an electronic device according to an embodiment of the present disclosure. First, please refer to FIG. 4A , a
圖5A至圖5B是本揭露的另一實施例的一種電子裝置的製造方法的局部步驟的剖面示意圖。首先,請參考圖5A,提供基板110f,其中基板110f上包括第一接墊112。接著,以光刻膠(Photoresist)覆蓋部分基板110f。接著,以等離子、噴砂(Sandblasting)或蝕刻(etching)的方式,對基板110f進行表面處理,以在基板110f沒有覆蓋光刻膠的區域形成表面粗糙結構R,而定義出基板110f的限制區域A。之後,移除光刻膠,且接合電子元件120於基板110f上,其中電子元件120包括第二接墊122,且第一接墊112與第二接墊122透過焊球150而結構性且電性連接在一起。最後,請同時參考圖5A與圖5B,形成底部填充膠層130a於基板110f上,其中底部填充膠層130a可容易地透過虹吸現象而流到限制區域A,以覆蓋第一接墊112、第二接墊122以及焊球150而固化,而底部填充膠層130a不會流到表面粗糙結構R上。至此,已完成電子裝置100f的製作。5A to 5B are schematic cross-sectional views of partial steps of a method for manufacturing an electronic device according to another embodiment of the present disclosure. First, please refer to FIG. 5A , a
由於粗糙度較高時,底部填充膠層130a不會被濕潤,因此可通過在不需要底部填充膠層130a的區域進行表面粗糙化,來限制底部填充膠層130a的流動範圍,而達到控制底部填充膠層130a的面積。Since the
於另一未繪示的實施例中,亦可通過彼此分離的多個微結構來取代表面粗糙結構R。詳細來說,首先,提供基板。接著,以光刻膠覆蓋部分基板,並通過光刻工藝等步驟來製作微結構,而定義出基板的限制區域。之後,接合電子元件於基板上。最後,形成底部填充膠層於基板上,其中底部填充膠層可容易地透過虹吸現象而流到限制區域而固化,而底部填充膠層不會流到微結構上。至此,已完成電子裝置的製作。In another unillustrated embodiment, the rough surface structure R may also be replaced by a plurality of microstructures separated from each other. Specifically, first, a substrate is provided. Then, a part of the substrate is covered with photoresist, and a microstructure is fabricated through steps such as a photolithography process, so as to define a restricted area of the substrate. After that, the electronic components are bonded on the substrate. Finally, an underfill adhesive layer is formed on the substrate, wherein the underfill adhesive layer can easily flow to the restricted area through the siphon phenomenon to be cured, and the underfill adhesive layer will not flow onto the microstructure. So far, the fabrication of the electronic device has been completed.
圖6A至圖6C是本揭露的另一實施例的一種電子裝置的製造方法的剖面示意圖。首先,請參考圖6A,提供基板110,其中基板110上包括第一接墊112。接著,以絲網印刷法(screen printing)塗布含氟物質於基板110上。接著,烘乾含氟物質,使基板110的表面S與含氟物質脫水產生Si-O鍵,而形成具有疏水性的保護結構140g,並以保護結構140g定義出基板110的限制區域A。接著,請參考圖6B,接合電子元件120於基板110上,其中電子元件120包括第二接墊122,且第一接墊112與第二接墊122透過焊球150而結構性且電性連接在一起。最後,請同時參考圖6B與圖6C,形成底部填充膠層130a於基板110上,其中底部填充膠層130a可容易地透過虹吸現象而流到限制區域A,以覆蓋第一接墊112、第二接墊122以及焊球150而固化,而底部填充膠層130a不會流到保護結構140g上。至此,已完成電子裝置100g的製作。6A to 6C are schematic cross-sectional views of a method of manufacturing an electronic device according to another embodiment of the present disclosure. First, please refer to FIG. 6A , a
由於在基板110的表面S上塗覆含氟物質,而形成具有疏水性的保護結構140g,使底部填充膠層130a不會被保護結構140g潤濕,借此來限制底部填充膠層130a的流動範圍,而達到控制底部填充膠層130a的面積。Since the surface S of the
於另一未繪示的實施例中,亦可透過聚合物(pollymer),例如是氟碳聚合物(Fluorocarbon polymer),來取代含氟物質。詳細來說,首先,提供基板。接著,以八氟環丁烷(Octafluorocyclobutane,C4F8)來作為反應氣體,在室溫下通過電感耦合等離子體化學氣相沉積(ICP-CVD)在基板上形成氟碳聚合物薄膜,其中氟碳聚合物薄膜整面性地覆蓋基板的表面。接著,以光刻法來圖案化氟碳聚合物薄膜,而形成具有疏水性的保護結構,並定義出基板的限制區域。也就是說,除了降低表面能的氟碳鏈之外,矽烷還可用于形成疏水表面。之後,接合電子元件於基板上。最後,形成底部填充膠層於基板上,其中底部填充膠層可容易地透過虹吸現象而流到限制區域中而固化,而底部填充膠層不會流到保護結構上。至此,已完成電子裝置的製作。In another unillustrated embodiment, the fluorine-containing substance can also be replaced by a polymer (pollymer), such as a fluorocarbon polymer (Fluorocarbon polymer). Specifically, first, a substrate is provided. Next, using Octafluorocyclobutane (C4F8) as the reaction gas, a fluorocarbon polymer film is formed on the substrate by inductively coupled plasma chemical vapor deposition (ICP-CVD) at room temperature, in which the fluorocarbon polymer Thin film covers the entire surface of the substrate. Then, the fluorocarbon polymer film is patterned by photolithography to form a hydrophobic protection structure and define the restricted area of the substrate. That is, in addition to fluorocarbon chains that lower the surface energy, silanes can also be used to form hydrophobic surfaces. After that, the electronic components are bonded on the substrate. Finally, an underfill adhesive layer is formed on the substrate, wherein the underfill adhesive layer can easily flow into the restricted area through the siphon phenomenon to be cured, and the underfill adhesive layer cannot flow onto the protection structure. So far, the fabrication of the electronic device has been completed.
綜上所述,在本揭露的實施例中,保護結構設置於基板上且鄰近底部填充膠層,借此可限制底部填充膠層的範圍,而使本揭露的電子裝置可有效地控制底部填充膠層的面積,進而使底部填充膠層的用量及形狀可具有一致性。To sum up, in the embodiments of the present disclosure, the protection structure is disposed on the substrate and adjacent to the underfill adhesive layer, thereby limiting the scope of the underfill adhesive layer, so that the electronic device of the present disclosure can effectively control the underfill. The area of the adhesive layer, and thus the amount and shape of the underfill adhesive layer can be consistent.
最後應說明的是:以上各實施例僅用以說明本發明的技術方案,而非對其限制;儘管參照前述各實施例對本發明進行了詳細的說明,本領域的普通技術人員應當理解:其依然可以對前述各實施例所記載的技術方案進行修改,或者對其中部分或者全部技術特徵進行等同替換;而這些修改或者替換,並不使相應技術方案的本質脫離本發明各實施例技術方案的範圍。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.
100a、100b、100c、100d、100e、100f、100g:電子裝置
110、110f:基板
112:第一接墊
120:電子元件
121:上表面
122:第二接墊
130a、130b、130d:底部填充膠層
140a、140b、140c、140d、140g:保護結構
142b、142c:擋牆圖案
145b、145c:開口
150:焊球
160:金屬層
A:限制區域
H:高度
L:能量光束
P:鋼板
R:表面粗糙結構
S:表面
T:厚度
100a, 100b, 100c, 100d, 100e, 100f, 100g:
圖1是本揭露的一實施例的一種電子裝置的剖面示意圖。 圖2A是本揭露的一實施例的一種電子裝置的俯視示意圖。 圖2B是本揭露的另一實施例的一種電子裝置的俯視示意圖。 圖3是本揭露的另一實施例的一種電子裝置的俯視示意圖。 圖4A至圖4C是本揭露的一實施例的一種電子裝置的製造方法的剖面示意圖。 圖5A至圖5B是本揭露的另一實施例的一種電子裝置的製造方法的局部步驟的剖面示意圖。 圖6A至圖6C是本揭露的另一實施例的一種電子裝置的製造方法的剖面示意圖。 FIG. 1 is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure. FIG. 2A is a schematic top view of an electronic device according to an embodiment of the present disclosure. FIG. 2B is a schematic top view of an electronic device according to another embodiment of the present disclosure. FIG. 3 is a schematic top view of an electronic device according to another embodiment of the present disclosure. 4A to 4C are schematic cross-sectional views of a method for manufacturing an electronic device according to an embodiment of the present disclosure. 5A to 5B are schematic cross-sectional views of partial steps of a method for manufacturing an electronic device according to another embodiment of the present disclosure. 6A to 6C are schematic cross-sectional views of a method of manufacturing an electronic device according to another embodiment of the present disclosure.
100a:電子裝置 100a: electronic device
110:基板 110: Substrate
112:第一接墊 112: First pad
120:電子元件 120: Electronic components
121:上表面 121: upper surface
122:第二接墊 122: Second pad
130a:底部填充膠層 130a: Underfill rubber layer
140a:保護結構 140a: Protective structure
150:焊球 150: solder ball
H:高度 H: height
S:表面 S: surface
T:厚度 T: Thickness
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TW111109545A TWI803242B (en) | 2021-07-09 | 2022-03-16 | Electronic device and manufacturing method thereof |
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CN103594385A (en) * | 2012-08-15 | 2014-02-19 | 台湾积体电路制造股份有限公司 | Method to control underfill fillet width |
TW202017132A (en) * | 2018-10-23 | 2020-05-01 | 矽品精密工業股份有限公司 | Electronic package |
TW202018899A (en) * | 2018-10-31 | 2020-05-16 | 台灣積體電路製造股份有限公司 | Package and method of forming the same |
TW202021075A (en) * | 2018-11-20 | 2020-06-01 | 南亞科技股份有限公司 | Semiconductor package and method for manufacturing the same |
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CN103594385A (en) * | 2012-08-15 | 2014-02-19 | 台湾积体电路制造股份有限公司 | Method to control underfill fillet width |
TW202017132A (en) * | 2018-10-23 | 2020-05-01 | 矽品精密工業股份有限公司 | Electronic package |
TW202018899A (en) * | 2018-10-31 | 2020-05-16 | 台灣積體電路製造股份有限公司 | Package and method of forming the same |
TW202021075A (en) * | 2018-11-20 | 2020-06-01 | 南亞科技股份有限公司 | Semiconductor package and method for manufacturing the same |
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