TWI801230B - 半導體記憶體裝置 - Google Patents

半導體記憶體裝置 Download PDF

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Publication number
TWI801230B
TWI801230B TW111116609A TW111116609A TWI801230B TW I801230 B TWI801230 B TW I801230B TW 111116609 A TW111116609 A TW 111116609A TW 111116609 A TW111116609 A TW 111116609A TW I801230 B TWI801230 B TW I801230B
Authority
TW
Taiwan
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
TW111116609A
Other languages
English (en)
Other versions
TW202315094A (zh
Inventor
李讚美
朴相郁
徐藝正
鄭祥敎
Original Assignee
南韓商三星電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商三星電子股份有限公司 filed Critical 南韓商三星電子股份有限公司
Publication of TW202315094A publication Critical patent/TW202315094A/zh
Application granted granted Critical
Publication of TWI801230B publication Critical patent/TWI801230B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW111116609A 2021-09-10 2022-05-03 半導體記憶體裝置 TWI801230B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2021-0120903 2021-09-10
KR1020210120903A KR20230038342A (ko) 2021-09-10 2021-09-10 반도체 메모리 장치 및 그의 제조 방법

Publications (2)

Publication Number Publication Date
TW202315094A TW202315094A (zh) 2023-04-01
TWI801230B true TWI801230B (zh) 2023-05-01

Family

ID=85431322

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111116609A TWI801230B (zh) 2021-09-10 2022-05-03 半導體記憶體裝置

Country Status (4)

Country Link
US (1) US20230084694A1 (zh)
KR (1) KR20230038342A (zh)
CN (1) CN115802755A (zh)
TW (1) TWI801230B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116761423B (zh) * 2023-02-08 2024-03-01 北京超弦存储器研究院 3d堆叠的半导体器件及其制造方法、3d存储器、电子设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160365440A1 (en) * 2015-06-10 2016-12-15 Samsung Electronics Co., Ltd. Semiconductor devices
US20200350315A1 (en) * 2019-04-30 2020-11-05 Samsung Electronics Co., Ltd. Semiconductor memory device and method of fabricating the same
US20200388625A1 (en) * 2017-11-24 2020-12-10 Samsung Electronics Co., Ltd. Semiconductor memory devices
US20210125989A1 (en) * 2019-10-29 2021-04-29 Samsung Electronics Co., Ltd. Three-dimensional semiconductor memory device
TW202203324A (zh) * 2020-06-30 2022-01-16 台灣積體電路製造股份有限公司 記憶體裝置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160365440A1 (en) * 2015-06-10 2016-12-15 Samsung Electronics Co., Ltd. Semiconductor devices
US20200388625A1 (en) * 2017-11-24 2020-12-10 Samsung Electronics Co., Ltd. Semiconductor memory devices
US20200350315A1 (en) * 2019-04-30 2020-11-05 Samsung Electronics Co., Ltd. Semiconductor memory device and method of fabricating the same
US20210125989A1 (en) * 2019-10-29 2021-04-29 Samsung Electronics Co., Ltd. Three-dimensional semiconductor memory device
TW202203324A (zh) * 2020-06-30 2022-01-16 台灣積體電路製造股份有限公司 記憶體裝置

Also Published As

Publication number Publication date
TW202315094A (zh) 2023-04-01
US20230084694A1 (en) 2023-03-16
KR20230038342A (ko) 2023-03-20
CN115802755A (zh) 2023-03-14

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