TWI801142B - 加工條件設定裝置、加工條件設定方法及晶圓製造系統 - Google Patents
加工條件設定裝置、加工條件設定方法及晶圓製造系統 Download PDFInfo
- Publication number
- TWI801142B TWI801142B TW111106171A TW111106171A TWI801142B TW I801142 B TWI801142 B TW I801142B TW 111106171 A TW111106171 A TW 111106171A TW 111106171 A TW111106171 A TW 111106171A TW I801142 B TWI801142 B TW I801142B
- Authority
- TW
- Taiwan
- Prior art keywords
- condition setting
- processing condition
- manufacturing system
- wafer manufacturing
- setting device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
- G05B19/41875—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by quality surveillance of production
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q15/00—Automatic control or regulation of feed movement, cutting velocity or position of tool or work
- B23Q15/007—Automatic control or regulation of feed movement, cutting velocity or position of tool or work while the tool acts upon the workpiece
- B23Q15/013—Control or regulation of feed movement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/32—Operator till task planning
- G05B2219/32201—Build statistical model of past normal proces, compare with actual process
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/45—Nc applications
- G05B2219/45031—Manufacturing semiconductor wafers
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/45—Nc applications
- G05B2219/45232—CMP chemical mechanical polishing of wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Quality & Reliability (AREA)
- Automation & Control Theory (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021026648A JP2022128233A (ja) | 2021-02-22 | 2021-02-22 | 加工条件設定装置、加工条件設定方法、及びウェーハの製造システム |
JP2021-026648 | 2021-02-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202241641A TW202241641A (zh) | 2022-11-01 |
TWI801142B true TWI801142B (zh) | 2023-05-01 |
Family
ID=82931587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111106171A TWI801142B (zh) | 2021-02-22 | 2022-02-21 | 加工條件設定裝置、加工條件設定方法及晶圓製造系統 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20240123566A1 (zh) |
JP (1) | JP2022128233A (zh) |
KR (1) | KR20230119024A (zh) |
CN (1) | CN116888712A (zh) |
DE (1) | DE112022001172T5 (zh) |
TW (1) | TWI801142B (zh) |
WO (1) | WO2022176576A1 (zh) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003085526A (ja) * | 2001-09-12 | 2003-03-20 | Toshiba Corp | 最適値探索装置、最適値探索方法、最適値探索プログラム、パラメータ・フィッティング方法及び半導体装置の製造方法 |
JP2005520317A (ja) * | 2001-06-19 | 2005-07-07 | アプライド マテリアルズ インコーポレイテッド | 半導体ウェハの表面平坦化方法及びその装置 |
JP2005317864A (ja) * | 2004-04-30 | 2005-11-10 | Renesas Technology Corp | ウェハの研磨方法 |
TWI277149B (en) * | 2003-04-11 | 2007-03-21 | Trecenti Technologies Inc | Manufacturing method of semiconductor device, automatic operation method of semiconductor device, automatic operation system, and automatic operation method of CMP apparatus |
WO2007094443A1 (ja) * | 2006-02-17 | 2007-08-23 | Nikon Corporation | 調整方法、基板処理方法、基板処理装置、露光装置、検査装置、測定検査システム、処理装置、コンピュータ・システム、プログラム及び情報記録媒体 |
JP2009267159A (ja) * | 2008-04-25 | 2009-11-12 | Sumco Techxiv株式会社 | 半導体ウェーハの製造装置及び方法 |
JP2016032862A (ja) * | 2014-07-30 | 2016-03-10 | エルジー・シルトロン・インコーポレーテッド | ウエハー研磨装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4827292B2 (ja) | 2000-11-01 | 2011-11-30 | アプライド マテリアルズ インコーポレイテッド | 研磨装置 |
JP5293153B2 (ja) * | 2002-03-14 | 2013-09-18 | 株式会社ニコン | 加工量予測方法 |
JP2007220842A (ja) * | 2006-02-16 | 2007-08-30 | Renesas Technology Corp | 半導体装置の製造方法、ウェハの研磨方法、および電極間隔の設定方法 |
JP5691796B2 (ja) * | 2011-04-26 | 2015-04-01 | 株式会社Sumco | 研磨装置、および、研磨方法 |
JP7137943B2 (ja) * | 2018-03-20 | 2022-09-15 | 株式会社日立ハイテク | 探索装置、探索方法及びプラズマ処理装置 |
-
2021
- 2021-02-22 JP JP2021026648A patent/JP2022128233A/ja active Pending
-
2022
- 2022-01-28 CN CN202280016459.3A patent/CN116888712A/zh active Pending
- 2022-01-28 US US18/546,797 patent/US20240123566A1/en active Pending
- 2022-01-28 WO PCT/JP2022/003436 patent/WO2022176576A1/ja active Application Filing
- 2022-01-28 KR KR1020237025640A patent/KR20230119024A/ko unknown
- 2022-01-28 DE DE112022001172.6T patent/DE112022001172T5/de active Pending
- 2022-02-21 TW TW111106171A patent/TWI801142B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005520317A (ja) * | 2001-06-19 | 2005-07-07 | アプライド マテリアルズ インコーポレイテッド | 半導体ウェハの表面平坦化方法及びその装置 |
JP2003085526A (ja) * | 2001-09-12 | 2003-03-20 | Toshiba Corp | 最適値探索装置、最適値探索方法、最適値探索プログラム、パラメータ・フィッティング方法及び半導体装置の製造方法 |
TWI277149B (en) * | 2003-04-11 | 2007-03-21 | Trecenti Technologies Inc | Manufacturing method of semiconductor device, automatic operation method of semiconductor device, automatic operation system, and automatic operation method of CMP apparatus |
JP2005317864A (ja) * | 2004-04-30 | 2005-11-10 | Renesas Technology Corp | ウェハの研磨方法 |
WO2007094443A1 (ja) * | 2006-02-17 | 2007-08-23 | Nikon Corporation | 調整方法、基板処理方法、基板処理装置、露光装置、検査装置、測定検査システム、処理装置、コンピュータ・システム、プログラム及び情報記録媒体 |
JP2009267159A (ja) * | 2008-04-25 | 2009-11-12 | Sumco Techxiv株式会社 | 半導体ウェーハの製造装置及び方法 |
TWI384541B (zh) * | 2008-04-25 | 2013-02-01 | Sumco Techxiv Corp | Semiconductor wafer manufacturing apparatus and method |
JP2016032862A (ja) * | 2014-07-30 | 2016-03-10 | エルジー・シルトロン・インコーポレーテッド | ウエハー研磨装置 |
Also Published As
Publication number | Publication date |
---|---|
US20240123566A1 (en) | 2024-04-18 |
JP2022128233A (ja) | 2022-09-01 |
DE112022001172T5 (de) | 2023-12-14 |
WO2022176576A1 (ja) | 2022-08-25 |
TW202241641A (zh) | 2022-11-01 |
CN116888712A (zh) | 2023-10-13 |
KR20230119024A (ko) | 2023-08-14 |
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