TWI800775B - 用於ｃｍｏｓ影像感測器之深溝槽隔離（ｄｔｉ）結構 - Google Patents

用於ｃｍｏｓ影像感測器之深溝槽隔離（ｄｔｉ）結構 Download PDF

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Publication number
TWI800775B
TWI800775B TW109143038A TW109143038A TWI800775B TW I800775 B TWI800775 B TW I800775B TW 109143038 A TW109143038 A TW 109143038A TW 109143038 A TW109143038 A TW 109143038A TW I800775 B TWI800775 B TW I800775B
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TW
Taiwan
Prior art keywords
dti
image sensor
trench isolation
cmos image
deep trench
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TW109143038A
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English (en)
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TW202133422A (zh
Inventor
輝 臧
剛 陳
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美商豪威科技股份有限公司
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Publication of TW202133422A publication Critical patent/TW202133422A/zh
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Publication of TWI800775B publication Critical patent/TWI800775B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW109143038A 2019-12-19 2020-12-07 用於ｃｍｏｓ影像感測器之深溝槽隔離（ｄｔｉ）結構 TWI800775B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/720,236 US11244979B2 (en) 2019-12-19 2019-12-19 Deep trench isolation (DTI) structure for CMOS image sensor
US16/720,236 2019-12-19

Publications (2)

Publication Number Publication Date
TW202133422A TW202133422A (zh) 2021-09-01
TWI800775B true TWI800775B (zh) 2023-05-01

Family

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Family Applications (1)

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TW109143038A TWI800775B (zh) 2019-12-19 2020-12-07 用於ｃｍｏｓ影像感測器之深溝槽隔離（ｄｔｉ）結構

Country Status (3)

Country Link
US (1) US11244979B2 (zh)
CN (1) CN113013185A (zh)
TW (1) TWI800775B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210112034A (ko) * 2020-03-04 2021-09-14 에스케이하이닉스 주식회사 이미지 센서
KR20230017405A (ko) * 2021-07-27 2023-02-06 삼성전자주식회사 이미지 센서
CN113823652B (zh) * 2021-09-17 2023-09-01 联合微电子中心有限责任公司 带有pdaf功能的cmos图像传感器
US20230230993A1 (en) * 2022-01-20 2023-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Uniform trenches in semiconductor devices and manufacturing method thereof
US20240088187A1 (en) * 2022-09-12 2024-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench isolation structure for high resolution cis pixel
CN116417487A (zh) * 2023-06-09 2023-07-11 湖北江城芯片中试服务有限公司 一种半导体结构的形成方法和半导体结构
CN117423714B (zh) * 2023-12-18 2024-04-05 合肥晶合集成电路股份有限公司 半导体结构的制备方法及半导体结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120217601A1 (en) * 2011-02-24 2012-08-30 Sony Corporation Solid-state imaging device, manufacturing method thereof, and electronic apparatus
US20150243805A1 (en) * 2014-02-27 2015-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and method for forming the same
TW201916336A (zh) * 2017-09-29 2019-04-16 台灣積體電路製造股份有限公司 影像感測器和影像感測器製造方法

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JP6003316B2 (ja) * 2012-07-12 2016-10-05 ソニー株式会社 固体撮像装置、電子機器
JP6065448B2 (ja) * 2012-08-03 2017-01-25 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP2015106621A (ja) * 2013-11-29 2015-06-08 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
KR102410019B1 (ko) * 2015-01-08 2022-06-16 삼성전자주식회사 이미지 센서
JP2017108062A (ja) * 2015-12-11 2017-06-15 ソニー株式会社 固体撮像素子、撮像装置、および、固体撮像素子の製造方法
US10181490B2 (en) 2017-04-03 2019-01-15 Omnivision Technologies, Inc. Cross talk reduction for high dynamic range image sensors
US11075242B2 (en) * 2017-11-27 2021-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices for image sensing
JP2019134229A (ja) * 2018-01-29 2019-08-08 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
KR20210007684A (ko) * 2019-07-12 2021-01-20 에스케이하이닉스 주식회사 이미지 센서

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120217601A1 (en) * 2011-02-24 2012-08-30 Sony Corporation Solid-state imaging device, manufacturing method thereof, and electronic apparatus
US20150243805A1 (en) * 2014-02-27 2015-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and method for forming the same
TW201916336A (zh) * 2017-09-29 2019-04-16 台灣積體電路製造股份有限公司 影像感測器和影像感測器製造方法

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Publication number Publication date
US20210193702A1 (en) 2021-06-24
US11244979B2 (en) 2022-02-08
TW202133422A (zh) 2021-09-01
CN113013185A (zh) 2021-06-22

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