TWI800636B - 攝像元件、積層型攝像元件及固體攝像裝置 - Google Patents

攝像元件、積層型攝像元件及固體攝像裝置 Download PDF

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Publication number
TWI800636B
TWI800636B TW108112873A TW108112873A TWI800636B TW I800636 B TWI800636 B TW I800636B TW 108112873 A TW108112873 A TW 108112873A TW 108112873 A TW108112873 A TW 108112873A TW I800636 B TWI800636 B TW I800636B
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TW
Taiwan
Prior art keywords
imaging element
solid
multilayer
imaging
state
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TW108112873A
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English (en)
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TW201944590A (zh
Inventor
森脇俊貴
中野博史
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日商索尼股份有限公司
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Publication of TW201944590A publication Critical patent/TW201944590A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW108112873A 2018-04-20 2019-04-12 攝像元件、積層型攝像元件及固體攝像裝置 TWI800636B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018-081252 2018-04-20
JP2018081252 2018-04-20
JP2018-162972 2018-08-31
JP2018162972 2018-08-31

Publications (2)

Publication Number Publication Date
TW201944590A TW201944590A (zh) 2019-11-16
TWI800636B true TWI800636B (zh) 2023-05-01

Family

ID=68240081

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108112873A TWI800636B (zh) 2018-04-20 2019-04-12 攝像元件、積層型攝像元件及固體攝像裝置

Country Status (7)

Country Link
US (1) US20210288099A1 (zh)
EP (1) EP3783652B1 (zh)
JP (1) JPWO2019203222A1 (zh)
KR (1) KR20210004974A (zh)
CN (1) CN111971799A (zh)
TW (1) TWI800636B (zh)
WO (1) WO2019203222A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3723132B1 (en) 2017-12-05 2022-08-24 Sony Group Corporation Imaging element, laminate-type imaging element, and solid-state imaging device
JP7259849B2 (ja) * 2018-04-20 2023-04-18 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP7318518B2 (ja) * 2019-11-26 2023-08-01 信越半導体株式会社 固体撮像素子用のシリコン単結晶基板及びシリコンエピタキシャルウェーハ、並びに固体撮像素子
US20220393045A1 (en) * 2020-02-12 2022-12-08 Sony Group Corporation Imaging element, stacked imaging element, solid-state imaging device, and inorganic oxide semiconductor material
US20230124165A1 (en) * 2020-03-31 2023-04-20 Sony Group Corporation Imaging element and imaging device
WO2024070293A1 (ja) * 2022-09-30 2024-04-04 ソニーセミコンダクタソリューションズ株式会社 光電変換素子および光検出装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123698A (ja) * 2005-10-31 2007-05-17 Toppan Printing Co Ltd 薄膜トランジスタおよびその製造方法
JP2012049210A (ja) * 2010-08-25 2012-03-08 Fujifilm Corp 酸化物半導体薄膜およびその製造方法、並びに薄膜トランジスタ、薄膜トランジスタを備えた装置
US20160037098A1 (en) * 2014-07-31 2016-02-04 Samsung Electronics Co., Ltd. Image Sensors Including Semiconductor Channel Patterns
TW201719874A (zh) * 2015-09-10 2017-06-01 半導體能源研究所股份有限公司 攝像裝置、模組、電子裝置以及攝像裝置的工作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234650A (ja) * 2006-02-27 2007-09-13 Fujifilm Corp 光電変換素子及び固体撮像素子
JP2008177191A (ja) 2007-01-16 2008-07-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびそれを用いたカメラ
JP4802286B2 (ja) * 2009-08-28 2011-10-26 富士フイルム株式会社 光電変換素子及び撮像素子
JP5509846B2 (ja) 2009-12-28 2014-06-04 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
KR101938272B1 (ko) * 2011-08-26 2019-01-15 삼성전자주식회사 신규한 퀴나크리돈 유도체, 이를 포함하는 광활성층 및 광전 변환 소자
JP5492939B2 (ja) * 2012-05-21 2014-05-14 富士フイルム株式会社 固体撮像素子の製造方法
JP6128020B2 (ja) * 2013-04-10 2017-05-17 ソニー株式会社 電子デバイス及び固体撮像装置、並びに、電子デバイスにおける電極形成方法
JP2016063165A (ja) * 2014-09-19 2016-04-25 株式会社東芝 撮像素子及び固体撮像装置
WO2017029877A1 (ja) * 2015-08-19 2017-02-23 ソニー株式会社 絶縁材料、電子デバイス及び撮像装置
JP2017157801A (ja) * 2016-03-04 2017-09-07 ソニー株式会社 光電変換素子および光電変換素子の製造方法ならびに固体撮像装置
JP7003919B2 (ja) * 2016-08-03 2022-01-21 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123698A (ja) * 2005-10-31 2007-05-17 Toppan Printing Co Ltd 薄膜トランジスタおよびその製造方法
JP2012049210A (ja) * 2010-08-25 2012-03-08 Fujifilm Corp 酸化物半導体薄膜およびその製造方法、並びに薄膜トランジスタ、薄膜トランジスタを備えた装置
US20160037098A1 (en) * 2014-07-31 2016-02-04 Samsung Electronics Co., Ltd. Image Sensors Including Semiconductor Channel Patterns
TW201719874A (zh) * 2015-09-10 2017-06-01 半導體能源研究所股份有限公司 攝像裝置、模組、電子裝置以及攝像裝置的工作方法

Also Published As

Publication number Publication date
KR20210004974A (ko) 2021-01-13
JPWO2019203222A1 (ja) 2021-05-13
EP3783652A4 (en) 2021-04-28
EP3783652B1 (en) 2022-09-21
CN111971799A (zh) 2020-11-20
WO2019203222A1 (ja) 2019-10-24
TW201944590A (zh) 2019-11-16
EP3783652A1 (en) 2021-02-24
US20210288099A1 (en) 2021-09-16

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