TWI800270B - 固態影像感測器 - Google Patents
固態影像感測器 Download PDFInfo
- Publication number
- TWI800270B TWI800270B TW111106120A TW111106120A TWI800270B TW I800270 B TWI800270 B TW I800270B TW 111106120 A TW111106120 A TW 111106120A TW 111106120 A TW111106120 A TW 111106120A TW I800270 B TWI800270 B TW I800270B
- Authority
- TW
- Taiwan
- Prior art keywords
- solid
- image sensor
- state image
- state
- sensor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Optical Filters (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/496,472 US12046609B2 (en) | 2021-10-07 | 2021-10-07 | Solid-state image sensor |
| US17/496,472 | 2021-10-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202316647A TW202316647A (zh) | 2023-04-16 |
| TWI800270B true TWI800270B (zh) | 2023-04-21 |
Family
ID=85798522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111106120A TWI800270B (zh) | 2021-10-07 | 2022-02-21 | 固態影像感測器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12046609B2 (zh) |
| JP (1) | JP7465298B2 (zh) |
| KR (1) | KR102611711B1 (zh) |
| CN (1) | CN115954369A (zh) |
| TW (1) | TWI800270B (zh) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201725713A (zh) * | 2015-10-15 | 2017-07-16 | 台灣積體電路製造股份有限公司 | 相位偵測自動對焦技術 |
| TW202029484A (zh) * | 2014-11-05 | 2020-08-01 | 日商索尼半導體解決方案公司 | 固體攝像元件及其製造方法以及電子機器 |
| US20200328238A1 (en) * | 2019-04-10 | 2020-10-15 | Samsung Electronics Co., Ltd. | Image sensor including shared pixels |
| TW202040806A (zh) * | 2019-04-16 | 2020-11-01 | 采鈺科技股份有限公司 | 固態影像裝置 |
| US20200365638A1 (en) * | 2006-08-28 | 2020-11-19 | Micron Technology, Inc. | Color filter array, imagers and systems having same, and methods of fabrication and use thereof |
| US20210193727A1 (en) * | 2016-03-10 | 2021-06-24 | Sony Corporation | Imaging device and electronic device |
| TW202127646A (zh) * | 2019-10-28 | 2021-07-16 | 美商豪威科技股份有限公司 | 多個子像素間具有共享微透鏡的影像感測器 |
| TWI739538B (zh) * | 2020-05-12 | 2021-09-11 | 采鈺科技股份有限公司 | 固態成像裝置 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6214691B2 (ja) | 2014-05-01 | 2017-10-18 | 采▲ぎょく▼科技股▲ふん▼有限公司ＶｉｓＥｒａ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ | 固体撮像装置 |
| US9281333B2 (en) * | 2014-05-01 | 2016-03-08 | Visera Technologies Company Limited | Solid-state imaging devices having light shielding partitions with variable dimensions |
| US9704901B2 (en) * | 2015-01-16 | 2017-07-11 | Visera Technologies Company Limited | Solid-state imaging devices |
| US10566365B2 (en) | 2015-05-27 | 2020-02-18 | Visera Technologies Company Limited | Image sensor |
| US10121809B2 (en) | 2016-09-13 | 2018-11-06 | Omnivision Technologies, Inc. | Backside-illuminated color image sensors with crosstalk-suppressing color filter array |
| JP7171199B2 (ja) * | 2017-08-03 | 2022-11-15 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、及び電子機器 |
| KR102375989B1 (ko) | 2017-08-10 | 2022-03-18 | 삼성전자주식회사 | 화소 사이의 신호 차이를 보상하는 이미지 센서 |
| US11233081B2 (en) | 2018-09-26 | 2022-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wave guide filter for semiconductor imaging devices |
| US11405535B2 (en) | 2019-02-28 | 2022-08-02 | Qualcomm Incorporated | Quad color filter array camera sensor configurations |
| US10686000B1 (en) * | 2019-04-12 | 2020-06-16 | Visera Technologies Company Limited | Solid-state imaging device |
| US11297219B2 (en) * | 2019-06-11 | 2022-04-05 | Samsung Electronics Co., Ltd. | Image sensor |
| KR20210054092A (ko) | 2019-11-04 | 2021-05-13 | 삼성전자주식회사 | 서로 거울 대칭인 픽셀들을 포함하는 이미지 센서 |
| WO2021106670A1 (ja) | 2019-11-26 | 2021-06-03 | 富士フイルム株式会社 | 固体撮像素子 |
| US11631709B2 (en) | 2020-03-10 | 2023-04-18 | Visera Technologies Company Limited | Solid-state image sensor |
| US12046611B2 (en) * | 2020-11-12 | 2024-07-23 | Visera Technologies Company Limited | Solid-state image sensor |
| KR20220078355A (ko) * | 2020-12-03 | 2022-06-10 | 삼성전자주식회사 | Af 픽셀들을 포함하는 이미지 센서 |
| US20220384507A1 (en) * | 2021-05-31 | 2022-12-01 | Samsung Electronics Co., Ltd. | Image sensor |
-
2021
- 2021-10-07 US US17/496,472 patent/US12046609B2/en active Active
- 2021-12-31 KR KR1020210194096A patent/KR102611711B1/ko active IP Right Grant
-
2022
- 2022-02-21 TW TW111106120A patent/TWI800270B/zh active
- 2022-03-18 JP JP2022043531A patent/JP7465298B2/ja active Active
- 2022-03-25 CN CN202210306511.0A patent/CN115954369A/zh active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200365638A1 (en) * | 2006-08-28 | 2020-11-19 | Micron Technology, Inc. | Color filter array, imagers and systems having same, and methods of fabrication and use thereof |
| TW202029484A (zh) * | 2014-11-05 | 2020-08-01 | 日商索尼半導體解決方案公司 | 固體攝像元件及其製造方法以及電子機器 |
| TW201725713A (zh) * | 2015-10-15 | 2017-07-16 | 台灣積體電路製造股份有限公司 | 相位偵測自動對焦技術 |
| US20210193727A1 (en) * | 2016-03-10 | 2021-06-24 | Sony Corporation | Imaging device and electronic device |
| US20200328238A1 (en) * | 2019-04-10 | 2020-10-15 | Samsung Electronics Co., Ltd. | Image sensor including shared pixels |
| TW202040806A (zh) * | 2019-04-16 | 2020-11-01 | 采鈺科技股份有限公司 | 固態影像裝置 |
| TW202127646A (zh) * | 2019-10-28 | 2021-07-16 | 美商豪威科技股份有限公司 | 多個子像素間具有共享微透鏡的影像感測器 |
| TWI739538B (zh) * | 2020-05-12 | 2021-09-11 | 采鈺科技股份有限公司 | 固態成像裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023056460A (ja) | 2023-04-19 |
| US12046609B2 (en) | 2024-07-23 |
| TW202316647A (zh) | 2023-04-16 |
| US20230110102A1 (en) | 2023-04-13 |
| KR102611711B1 (ko) | 2023-12-11 |
| KR20230050198A (ko) | 2023-04-14 |
| JP7465298B2 (ja) | 2024-04-10 |
| CN115954369A (zh) | 2023-04-11 |
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