TWI800208B - 固態影像感測器 - Google Patents

固態影像感測器 Download PDF

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Publication number
TWI800208B
TWI800208B TW111100887A TW111100887A TWI800208B TW I800208 B TWI800208 B TW I800208B TW 111100887 A TW111100887 A TW 111100887A TW 111100887 A TW111100887 A TW 111100887A TW I800208 B TWI800208 B TW I800208B
Authority
TW
Taiwan
Prior art keywords
solid
image sensor
state image
state
sensor
Prior art date
Application number
TW111100887A
Other languages
English (en)
Other versions
TW202240875A (zh
Inventor
林正軒
塗宗儒
張育淇
吳翰林
蔡鴻仁
Original Assignee
采鈺科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 采鈺科技股份有限公司 filed Critical 采鈺科技股份有限公司
Publication of TW202240875A publication Critical patent/TW202240875A/zh
Application granted granted Critical
Publication of TWI800208B publication Critical patent/TWI800208B/zh

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/675—Focus control based on electronic image sensor signals comprising setting of focusing regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Focusing (AREA)
TW111100887A 2021-04-01 2022-01-10 固態影像感測器 TWI800208B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163169579P 2021-04-01 2021-04-01
US63/169,579 2021-04-01
US17/405,518 US11477364B1 (en) 2021-04-01 2021-08-18 Solid-state image sensor
US17/405,518 2021-08-18

Publications (2)

Publication Number Publication Date
TW202240875A TW202240875A (zh) 2022-10-16
TWI800208B true TWI800208B (zh) 2023-04-21

Family

ID=83450193

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111100887A TWI800208B (zh) 2021-04-01 2022-01-10 固態影像感測器

Country Status (5)

Country Link
US (1) US11477364B1 (zh)
JP (1) JP7487245B2 (zh)
KR (1) KR102659142B1 (zh)
CN (1) CN115207005A (zh)
TW (1) TWI800208B (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190075233A1 (en) * 2017-09-01 2019-03-07 Qualcomm Incorporated Extended or full-density phase-detection autofocus control
CN110062144A (zh) * 2019-05-14 2019-07-26 德淮半导体有限公司 相位对焦图像传感器及其形成方法、工作方法
US20190297291A1 (en) * 2018-03-20 2019-09-26 SK Hynix Inc. Image sensor
US20200236312A1 (en) * 2012-01-13 2020-07-23 Nikon Corporation Solid-state imaging device and electronic camera
US20200280659A1 (en) * 2019-02-28 2020-09-03 Qualcomm Incorporated Quad color filter array camera sensor configurations

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5705462B2 (ja) 2010-06-01 2015-04-22 シャープ株式会社 固体撮像素子および電子情報機器
JP6017322B2 (ja) * 2013-01-11 2016-10-26 富士フイルム株式会社 固体撮像装置
JP2015207815A (ja) * 2014-04-17 2015-11-19 キヤノン株式会社 撮像素子および撮像素子を備えた撮像装置
KR102268712B1 (ko) * 2014-06-23 2021-06-28 삼성전자주식회사 자동 초점 이미지 센서 및 이를 포함하는 디지털 영상 처리 장치
JP6802633B2 (ja) * 2016-03-04 2020-12-16 キヤノン株式会社 撮像素子、撮像装置、画像生成方法、及びプログラム
WO2017209252A1 (ja) * 2016-06-01 2017-12-07 富士フイルム株式会社 撮像装置、合焦制御方法、及び、合焦制御プログラム
JP6780389B2 (ja) * 2016-09-07 2020-11-04 ソニー株式会社 撮像制御装置および撮像制御方法
CN117270155A (zh) * 2018-07-20 2023-12-22 株式会社尼康 拍摄元件及拍摄装置
JP2019062536A (ja) * 2018-10-30 2019-04-18 株式会社ニコン 撮像装置
US10681290B1 (en) * 2019-01-03 2020-06-09 Novatek Microelectronics Corp. Method, image sensor, and image processing device for crosstalk noise reduction
KR20210012437A (ko) * 2019-07-25 2021-02-03 삼성전자주식회사 자동 초점 이미지 센서의 픽셀 어레이 및 이를 포함하는 자동 초점 이미지 센서
US11682685B2 (en) * 2019-10-24 2023-06-20 Samsung Electronics Co., Ltd. Color separation element and image sensor including the same
KR20210054092A (ko) * 2019-11-04 2021-05-13 삼성전자주식회사 서로 거울 대칭인 픽셀들을 포함하는 이미지 센서
US11631709B2 (en) * 2020-03-10 2023-04-18 Visera Technologies Company Limited Solid-state image sensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200236312A1 (en) * 2012-01-13 2020-07-23 Nikon Corporation Solid-state imaging device and electronic camera
US20190075233A1 (en) * 2017-09-01 2019-03-07 Qualcomm Incorporated Extended or full-density phase-detection autofocus control
US20190297291A1 (en) * 2018-03-20 2019-09-26 SK Hynix Inc. Image sensor
US20200280659A1 (en) * 2019-02-28 2020-09-03 Qualcomm Incorporated Quad color filter array camera sensor configurations
CN110062144A (zh) * 2019-05-14 2019-07-26 德淮半导体有限公司 相位对焦图像传感器及其形成方法、工作方法

Also Published As

Publication number Publication date
JP2022158989A (ja) 2022-10-17
CN115207005A (zh) 2022-10-18
JP7487245B2 (ja) 2024-05-20
KR20220136878A (ko) 2022-10-11
US20220321791A1 (en) 2022-10-06
TW202240875A (zh) 2022-10-16
KR102659142B1 (ko) 2024-04-22
US11477364B1 (en) 2022-10-18

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