TWI799833B - 聚醯亞胺前驅物、樹脂組成物、聚醯亞胺,用於半導體晶片與封裝膠材之間的保護犧牲層的聚醯亞胺,及具有保護犧牲層的半導體元件 - Google Patents

聚醯亞胺前驅物、樹脂組成物、聚醯亞胺,用於半導體晶片與封裝膠材之間的保護犧牲層的聚醯亞胺,及具有保護犧牲層的半導體元件 Download PDF

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TWI799833B
TWI799833B TW110113613A TW110113613A TWI799833B TW I799833 B TWI799833 B TW I799833B TW 110113613 A TW110113613 A TW 110113613A TW 110113613 A TW110113613 A TW 110113613A TW I799833 B TWI799833 B TW I799833B
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polyimide
sacrificial layer
protective sacrificial
resin composition
encapsulation material
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TW110113613A
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TW202241998A (zh
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葉冠樑
林季延
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達興材料股份有限公司
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Priority to TW110113613A priority Critical patent/TWI799833B/zh
Priority to CN202210373342.2A priority patent/CN115216006A/zh
Priority to JP2022066334A priority patent/JP7414881B2/ja
Priority to US17/720,734 priority patent/US20220340754A1/en
Priority to KR1020220046397A priority patent/KR20220142949A/ko
Publication of TW202241998A publication Critical patent/TW202241998A/zh
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Publication of TWI799833B publication Critical patent/TWI799833B/zh
Priority to JP2023089641A priority patent/JP2023109995A/ja

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    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
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TW110113613A 2021-04-15 2021-04-15 聚醯亞胺前驅物、樹脂組成物、聚醯亞胺,用於半導體晶片與封裝膠材之間的保護犧牲層的聚醯亞胺,及具有保護犧牲層的半導體元件 TWI799833B (zh)

Priority Applications (6)

Application Number Priority Date Filing Date Title
TW110113613A TWI799833B (zh) 2021-04-15 2021-04-15 聚醯亞胺前驅物、樹脂組成物、聚醯亞胺,用於半導體晶片與封裝膠材之間的保護犧牲層的聚醯亞胺,及具有保護犧牲層的半導體元件
CN202210373342.2A CN115216006A (zh) 2021-04-15 2022-04-11 聚酰亚胺前驱物、树脂组合物、聚酰亚胺、及具有牺牲保护层的半导体组件
JP2022066334A JP7414881B2 (ja) 2021-04-15 2022-04-13 犠牲保護層、及び該犠牲保護層含有半導体デバイス
US17/720,734 US20220340754A1 (en) 2021-04-15 2022-04-14 Polyimide precursor, resin composition including, and polyimide formed from such precursor, and use of the polyimide
KR1020220046397A KR20220142949A (ko) 2021-04-15 2022-04-14 폴리이미드 전구체, 이러한 전구체를 포함하는 수지 조성물 및 이러한 전구체로부터 형성된 폴리이미드, 및 폴리이미드의 용도
JP2023089641A JP2023109995A (ja) 2021-04-15 2023-05-31 ポリイミド前駆体、樹脂組成物及びポリイミド

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TW110113613A TWI799833B (zh) 2021-04-15 2021-04-15 聚醯亞胺前驅物、樹脂組成物、聚醯亞胺,用於半導體晶片與封裝膠材之間的保護犧牲層的聚醯亞胺,及具有保護犧牲層的半導體元件

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TW202241998A TW202241998A (zh) 2022-11-01
TWI799833B true TWI799833B (zh) 2023-04-21

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US (1) US20220340754A1 (zh)
JP (2) JP7414881B2 (zh)
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CN115710352B (zh) * 2022-10-31 2024-04-16 浙江中科玖源新材料有限公司 一种锂离子电池硅负极用粘结剂及锂离子电池硅负极

Citations (1)

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Publication number Priority date Publication date Assignee Title
CN109679095A (zh) * 2018-12-18 2019-04-26 苏州予信天材新材料应用技术有限公司 一种耐高温型聚酰胺-聚醚酰亚胺增韧聚合物及其制备方法

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JP3427713B2 (ja) * 1997-01-22 2003-07-22 株式会社日立製作所 樹脂封止型半導体装置およびその製造方法
JP2007183388A (ja) * 2006-01-06 2007-07-19 Toray Ind Inc 感光性樹脂組成物、耐熱性樹脂パターンの製造方法および有機電界発光素子
JP7052384B2 (ja) * 2018-01-31 2022-04-12 東レ株式会社 仮保護膜用樹脂組成物、およびこれを用いた半導体電子部品の製造方法
JP7230398B2 (ja) * 2018-09-26 2023-03-01 東レ株式会社 犠牲層用樹脂組成物、およびこれを用いた半導体電子部品の製造方法

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Publication number Priority date Publication date Assignee Title
CN109679095A (zh) * 2018-12-18 2019-04-26 苏州予信天材新材料应用技术有限公司 一种耐高温型聚酰胺-聚醚酰亚胺增韧聚合物及其制备方法

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US20220340754A1 (en) 2022-10-27
CN115216006A (zh) 2022-10-21
JP2022164609A (ja) 2022-10-27
TW202241998A (zh) 2022-11-01
KR20220142949A (ko) 2022-10-24
JP7414881B2 (ja) 2024-01-16
JP2023109995A (ja) 2023-08-08

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