TWI799387B - 微影裝置及微影方法 - Google Patents

微影裝置及微影方法 Download PDF

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Publication number
TWI799387B
TWI799387B TW106127871A TW106127871A TWI799387B TW I799387 B TWI799387 B TW I799387B TW 106127871 A TW106127871 A TW 106127871A TW 106127871 A TW106127871 A TW 106127871A TW I799387 B TWI799387 B TW I799387B
Authority
TW
Taiwan
Prior art keywords
lithographic
lithographic apparatus
lithographic method
Prior art date
Application number
TW106127871A
Other languages
English (en)
Other versions
TW201812477A (zh
Inventor
漢卓克斯 赫曼 馬里 寇克斯
威特 保羅 寇尼 亨利 迪
包伊夫 亞歷 傑福瑞 丹
安卓尼斯 亨瑞克 克佛耶茲
金 文森 奧維卡皮
丹 慕蘭 佛利茲 凡
迪 沙登 賈寇柏 卡理尼司 賈拉度司 凡
Original Assignee
荷蘭商Ａｓｍｌ荷蘭公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 荷蘭商Ａｓｍｌ荷蘭公司 filed Critical 荷蘭商Ａｓｍｌ荷蘭公司
Publication of TW201812477A publication Critical patent/TW201812477A/zh
Application granted granted Critical
Publication of TWI799387B publication Critical patent/TWI799387B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW106127871A 2016-09-02 2017-08-17 微影裝置及微影方法 TWI799387B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
??16186948.2 2016-09-02
EP16186948 2016-09-02
EP16186948.2 2016-09-02

Publications (2)

Publication Number Publication Date
TW201812477A TW201812477A (zh) 2018-04-01
TWI799387B true TWI799387B (zh) 2023-04-21

Family

ID=56853505

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106127871A TWI799387B (zh) 2016-09-02 2017-08-17 微影裝置及微影方法

Country Status (6)

Country Link
US (1) US10394140B2 (zh)
KR (1) KR102458061B1 (zh)
CN (1) CN109661617B (zh)
NL (1) NL2019362A (zh)
TW (1) TWI799387B (zh)
WO (1) WO2018041491A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210070995A (ko) * 2018-10-05 2021-06-15 에이에스엠엘 네델란즈 비.브이. 냉각 후드 상에서의 빠른 온도 제어를 위한 가스 혼합
NL2024322A (en) 2018-12-19 2020-07-07 Asml Netherlands Bv Lithographic apparatus with thermal conditioning system for conditioning the wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW405062B (en) * 1999-02-18 2000-09-11 Asm Lithography Bv Lithographic projection apparatus
US20080212053A1 (en) * 2003-10-16 2008-09-04 Asml Netherlands B.V. Device manufacturing method, lithographic apparatus and device manufactured thereby

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5581324A (en) * 1993-06-10 1996-12-03 Nikon Corporation Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors
JP3695000B2 (ja) * 1996-08-08 2005-09-14 株式会社ニコン 露光方法及び露光装置
US6445439B1 (en) 1999-12-27 2002-09-03 Svg Lithography Systems, Inc. EUV reticle thermal management
US6440619B1 (en) 2000-05-25 2002-08-27 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Method of distortion compensation by irradiation of adaptive lithography membrane masks
US20030235682A1 (en) 2002-06-21 2003-12-25 Sogard Michael R. Method and device for controlling thermal distortion in elements of a lithography system
US7132206B2 (en) 2002-09-17 2006-11-07 International Business Machines Corporation Process and apparatus for minimizing thermal gradients across an advanced lithographic mask
JP2005033179A (ja) 2003-06-18 2005-02-03 Canon Inc 露光装置及びデバイス製造方法
US7304715B2 (en) * 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7359029B2 (en) 2006-05-25 2008-04-15 Asml Netherlands B.V. Lithographic apparatus and method of reducing thermal distortion
JP5517766B2 (ja) 2010-06-16 2014-06-11 キヤノン株式会社 露光装置およびデバイス製造方法
JP5686779B2 (ja) * 2011-10-14 2015-03-18 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
JP6034972B2 (ja) 2012-09-25 2016-11-30 エーエスエムエル ネザーランズ ビー．ブイ． レチクル加熱を均一に保つレチクルヒータ
US20150331338A1 (en) * 2012-12-17 2015-11-19 Asml Netherlands B.V. Substrate Support for a Lithographic Apparatus and Lithographic Apparatus
JP2016042498A (ja) * 2014-08-13 2016-03-31 キヤノン株式会社 インプリント装置および物品製造方法
US10416574B2 (en) * 2015-04-21 2019-09-17 Asml Netherlands B.V Lithographic apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW405062B (en) * 1999-02-18 2000-09-11 Asm Lithography Bv Lithographic projection apparatus
US20080212053A1 (en) * 2003-10-16 2008-09-04 Asml Netherlands B.V. Device manufacturing method, lithographic apparatus and device manufactured thereby

Also Published As

Publication number Publication date
CN109661617B (zh) 2021-07-30
NL2019362A (en) 2018-03-06
KR20190043169A (ko) 2019-04-25
TW201812477A (zh) 2018-04-01
US10394140B2 (en) 2019-08-27
US20190187573A1 (en) 2019-06-20
CN109661617A (zh) 2019-04-19
WO2018041491A1 (en) 2018-03-08
KR102458061B1 (ko) 2022-10-24

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