TWI798889B - Solar cell - Google Patents

Solar cell Download PDF

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TWI798889B
TWI798889B TW110139151A TW110139151A TWI798889B TW I798889 B TWI798889 B TW I798889B TW 110139151 A TW110139151 A TW 110139151A TW 110139151 A TW110139151 A TW 110139151A TW I798889 B TWI798889 B TW I798889B
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layer
light
photoelectric conversion
solar cell
shielding structure
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TW110139151A
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TW202318678A (en
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曾振洋
吳哲耀
周凱茹
陳建琦
蔡秉均
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凌巨科技股份有限公司
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Priority to CN202111392220.XA priority patent/CN116014015A/en
Priority to CN202122876532.XU priority patent/CN216250753U/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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Abstract

A solar cell has a light transmission area, and includes a substrate, a photoelectric conversion structure, a metal conductive layer and a light shielding structure. The photoelectric conversion structure is arranged around the light transmission area, and includes a first electrode layer, a photoelectric conversion layer and a second electrode layer sequentially arranged on the substrate. The metal conductive layer is arranged around the photoelectric conversion structure. A first gap is provided between the metal conductive layer and the photoelectric conversion structure. The light shielding structure completely covers the first gap. The light shielding structure has a first toning layer and a reflective layer stacked on each other. The first toning layer is located between the substrate and the reflective layer. The material of the first toning layer includes MoO xor MoN x. The material of the reflective layer includes MoTa.

Description

太陽能電池Solar battery

本發明是有關於一種太陽能電池,且特別是有關於一種具有透光區的太陽能電池。 The present invention relates to a solar cell, and in particular to a solar cell with a light-transmitting region.

伴隨著顯示技術的蓬勃發展,顯示器的應用也日趨廣泛。除了高規格的顯示品質外,追求省電、環保等永續發展理念的顯示器也是相關廠商的開發重點之一。由於太陽能電池為環保綠能的指標技術,因此將太陽能發電技術應用在穿戴式顯示裝置上以提升其操作續航力的需求逐漸增加。為了避免顯示面板因薄膜太陽能板的疊置而造成的顯示品質下降,薄膜太陽能板在顯示面板的顯示區須具備一定的穿透度與光電轉換面積,方能同時達到顯示以及太陽能發電的效果。 With the vigorous development of display technology, the applications of displays are becoming more and more extensive. In addition to high-standard display quality, displays that pursue sustainable development concepts such as power saving and environmental protection are also one of the development priorities of relevant manufacturers. Since solar cells are an indicator technology for environmental protection and green energy, there is an increasing demand for applying solar power generation technology to wearable display devices to improve their operating endurance. In order to avoid the degradation of the display quality of the display panel due to the stacking of thin-film solar panels, the thin-film solar panel must have a certain degree of penetration and photoelectric conversion area in the display area of the display panel, so as to achieve the effect of display and solar power generation at the same time.

這類的薄膜太陽能板在顯示區大都設有週期性排列的多條太陽能電池走線,並且在顯示區的周圍設置傳輸線路以將這些太陽能電池走線所產生的電能傳送至儲能元件。為了確保傳輸線路中分別與太陽能電池走線的正負極電性連接的兩部分能電性分離,這兩部分間一般都設有間隙。也因此,來自顯示面板的光線 可以通過此間隙而形成漏光,且這類太陽能板在經由環境光的照射下會產生外觀顏色不一致的問題而影響整體的視覺品質。 This type of thin-film solar panel is mostly provided with a plurality of solar cell lines arranged periodically in the display area, and a transmission line is arranged around the display area to transmit the electric energy generated by these solar cell lines to the energy storage element. In order to ensure that the two parts of the transmission line that are electrically connected to the positive and negative electrodes of the solar cell wiring can be electrically separated, a gap is generally provided between the two parts. Therefore, the light from the display panel Light leakage may be formed through the gap, and this type of solar panel will have the problem of inconsistent appearance and color under the irradiation of ambient light, which will affect the overall visual quality.

本發明提供一種太陽能電池,其視覺效果較佳。 The invention provides a solar battery with better visual effect.

本發明的太陽能電池具有透光區,且包括基板、光電轉換結構、金屬導電層以及遮光結構。光電轉換結構環繞透光區設置,且包括依序設置在基板上的第一電極層、光電轉換層以及第二電極層。金屬導電層環繞光電轉換結構設置。至少部分金屬導電層與光電轉換結構之間設有第一間隙。遮光結構完全覆蓋第一間隙。遮光結構具有彼此堆疊的第一調色層和反射層。第一調色層位在基板與反射層之間。第一調色層的材料包括氧化鉬和氮化鉬的其中一者。反射層的材料包括鉬鉭合金。 The solar cell of the present invention has a light-transmitting region and includes a substrate, a photoelectric conversion structure, a metal conductive layer and a light-shielding structure. The photoelectric conversion structure is arranged around the light-transmitting area, and includes a first electrode layer, a photoelectric conversion layer and a second electrode layer sequentially arranged on the substrate. The metal conductive layer is arranged around the photoelectric conversion structure. A first gap is provided between at least part of the metal conductive layer and the photoelectric conversion structure. The light shielding structure completely covers the first gap. The light-shielding structure has a first toning layer and a reflecting layer stacked on each other. The first toning layer is located between the substrate and the reflective layer. The material of the first toning layer includes one of molybdenum oxide and molybdenum nitride. The material of the reflective layer includes molybdenum-tantalum alloy.

在本發明的一實施例中,上述的太陽能電池的遮光結構還具有設置在基板與反射層之間的第二調色層,且第二調色層的材料包括氧化鉬和氮化鉬的其中另一者。 In an embodiment of the present invention, the above solar cell light-shielding structure further has a second toning layer disposed between the substrate and the reflective layer, and the material of the second toning layer includes molybdenum oxide and molybdenum nitride. the other.

在本發明的一實施例中,上述的太陽能電池的金屬導電層包括彼此電性分離且環繞光電轉換結構設置的第一傳輸線和第二傳輸線。第一傳輸線電性連接第一電極層。第二傳輸線電性連接第二電極層。 In an embodiment of the present invention, the metal conductive layer of the solar cell includes a first transmission line and a second transmission line electrically separated from each other and disposed around the photoelectric conversion structure. The first transmission line is electrically connected to the first electrode layer. The second transmission line is electrically connected to the second electrode layer.

在本發明的一實施例中,上述的太陽能電池的金屬導電層還包括延伸自第一傳輸線且重疊於光電轉換結構的環狀電極, 且環狀電極與第二傳輸線之間設有第一間隙。 In an embodiment of the present invention, the metal conductive layer of the solar cell further includes a ring-shaped electrode extending from the first transmission line and overlapping the photoelectric conversion structure, And a first gap is provided between the ring electrode and the second transmission line.

在本發明的一實施例中,上述的太陽能電池的遮光結構設置在金屬導電層上。遮光結構直接接觸環狀電極和第二傳輸線的其中一者,並且與環狀電極和第二傳輸線的其中另一者電性分離。 In an embodiment of the present invention, the above-mentioned light-shielding structure of the solar cell is disposed on the metal conductive layer. The light-shielding structure directly contacts one of the ring electrode and the second transmission line, and is electrically separated from the other one of the ring electrode and the second transmission line.

在本發明的一實施例中,上述的太陽能電池的光電轉換結構區分為第一部分和第二部分。第一部分和第二部分之間具有第二間隙,且遮光結構還覆蓋第二間隙。 In an embodiment of the present invention, the above photoelectric conversion structure of the solar cell is divided into a first part and a second part. There is a second gap between the first part and the second part, and the light shielding structure also covers the second gap.

在本發明的一實施例中,上述的太陽能電池的遮光結構位在第一電極層與基板之間,且部分重疊於第一電極層。第一電極層與遮光結構之間設有絕緣層。 In an embodiment of the present invention, the light-shielding structure of the above-mentioned solar cell is located between the first electrode layer and the substrate, and partially overlaps the first electrode layer. An insulating layer is provided between the first electrode layer and the light shielding structure.

在本發明的一實施例中,上述的太陽能電池的遮光結構設置在光電轉換結構上,並且覆蓋光電轉換結構定義第一間隙的側壁。光電轉換結構與遮光結構之間設有絕緣層。 In an embodiment of the present invention, the above-mentioned light-shielding structure of the solar cell is disposed on the photoelectric conversion structure, and covers the sidewall of the photoelectric conversion structure defining the first gap. An insulating layer is provided between the photoelectric conversion structure and the light shielding structure.

在本發明的一實施例中,上述的太陽能電池的遮光結構設置在金屬導電層上。金屬導電層具有重疊於第一間隙的開口。遮光結構完全覆蓋開口,且金屬導電層與遮光結構之間設有絕緣層。 In an embodiment of the present invention, the above-mentioned light-shielding structure of the solar cell is disposed on the metal conductive layer. The metal conductive layer has an opening overlapping the first gap. The light-shielding structure completely covers the opening, and an insulating layer is provided between the metal conductive layer and the light-shielding structure.

在本發明的一實施例中,上述的太陽能電池的遮光結構設置在金屬導電層與光電轉換結構之間,且電性絕緣於金屬導電層和光電轉換結構。 In an embodiment of the present invention, the above-mentioned light shielding structure of the solar cell is disposed between the conductive metal layer and the photoelectric conversion structure, and is electrically insulated from the conductive metal layer and the photoelectric conversion structure.

基於上述,在本發明的一實施例的太陽能電池中,環繞 光電轉換結構設置的至少部分金屬導電層與光電轉換結構間設有第一間隙。透過遮光結構覆蓋此第一間隙,除了可解決顯示應用時的漏光問題,還可以有效改善太陽能電池在光線照射下的外觀顏色不一致的現象,進而提升太陽能電池的整體視效。 Based on the above, in a solar cell according to an embodiment of the present invention, the surrounding A first gap is provided between at least part of the metal conductive layer provided on the photoelectric conversion structure and the photoelectric conversion structure. Covering the first gap through the light-shielding structure can not only solve the light leakage problem in display applications, but also effectively improve the appearance and color inconsistency of the solar cell under light irradiation, thereby improving the overall visual effect of the solar cell.

10、10A、10B、10C、10D、10E、10F、20、20A:太陽能電池 10, 10A, 10B, 10C, 10D, 10E, 10F, 20, 20A: Solar cells

100:基板 100: Substrate

110、110A、110B、110C:光電轉換結構 110, 110A, 110B, 110C: photoelectric conversion structure

110C1:第一部分 110C1: Part 1

110C2:第二部分 110C2: Part Two

110s、DMs:側壁 110s, DMs: side walls

111:第一非本徵半導體層 111: the first extrinsic semiconductor layer

112:本徵半導體層 112: Intrinsic semiconductor layer

113:第二非本徵半導體層 113: the second extrinsic semiconductor layer

120、120A、120B:金屬導電層 120, 120A, 120B: metal conductive layer

120OP、OP:開口 120OP, OP: opening

121、121A:第一傳輸線 121, 121A: the first transmission line

122、122A:第二傳輸線 122, 122A: the second transmission line

123、123A:環狀電極 123, 123A: ring electrode

130、130A、130B1、130B2、130B3、130C、130D、130E、130F、130G、130H:遮光結構 130, 130A, 130B1, 130B2, 130B3, 130C, 130D, 130E, 130F, 130G, 130H: shading structure

131:反射層 131: reflective layer

133、135:調色層 133, 135: Color layer

150、160、160A、160B、160C、160D:絕緣層 150, 160, 160A, 160B, 160C, 160D: insulating layer

150a、150b:接觸孔 150a, 150b: contact holes

DM、DM-A:虛設的光電轉換結構 DM, DM-A: dummy photoelectric conversion structure

EL1、EL1A、EL1B、EL1d:第一電極層 EL1, EL1A, EL1B, EL1d: first electrode layer

EL1p、EL2p:凸出部 EL1p, EL2p: Protrusions

EL2、EL2A、EL2B、EL2d:第二電極層 EL2, EL2A, EL2B, EL2d: second electrode layer

G1a、G1b、G1c、G2a、G2b:間隙 G1a, G1b, G1c, G2a, G2b: Gap

PCL:光電轉換層 PCL: photoelectric conversion layer

TA:透光區 TA: Translucent area

Z:方向 Z: Direction

A-A’、B-B’、C-C’、D-D’、E-E’、F-F’:剖線 A-A', B-B', C-C', D-D', E-E', F-F': broken line

I:區域 I: area

圖1A是依照本發明的第一實施例的太陽能電池的俯視示意圖。 FIG. 1A is a schematic top view of a solar cell according to a first embodiment of the present invention.

圖1B是依照圖1A的另一種變形實施例的太陽能電池的俯視示意圖。 FIG. 1B is a schematic top view of a solar cell according to another modified embodiment of FIG. 1A .

圖2是圖1A的太陽能電池的剖視示意圖。 FIG. 2 is a schematic cross-sectional view of the solar cell shown in FIG. 1A .

圖3是圖2的太陽能電池的局部放大示意圖。 FIG. 3 is a partially enlarged schematic view of the solar cell in FIG. 2 .

圖4A是圖3的反射層的反射率對波長的曲線圖。 FIG. 4A is a graph of reflectivity versus wavelength for the reflective layer of FIG. 3 .

圖4B是圖3的第一調色層的反射率對波長的曲線圖。 FIG. 4B is a graph of reflectance versus wavelength for the first toning layer of FIG. 3 .

圖4C是圖3的第二調色層的反射率對波長的曲線圖。 FIG. 4C is a graph of reflectance versus wavelength for the second toning layer of FIG. 3 .

圖5A至圖5C是依照本發明的另一些變形實施例的遮光結構的剖視示意圖。 5A to 5C are schematic cross-sectional views of light-shielding structures according to other modified embodiments of the present invention.

圖6是依照本發明的第二實施例的太陽能電池的剖視示意圖。 6 is a schematic cross-sectional view of a solar cell according to a second embodiment of the present invention.

圖7是依照本發明的第三實施例的太陽能電池的剖視示意圖。 7 is a schematic cross-sectional view of a solar cell according to a third embodiment of the present invention.

圖8是依照本發明的第四實施例的太陽能電池的剖視示意圖。 8 is a schematic cross-sectional view of a solar cell according to a fourth embodiment of the present invention.

圖9是依照本發明的第五實施例的太陽能電池的剖視示意圖。 9 is a schematic cross-sectional view of a solar cell according to a fifth embodiment of the present invention.

圖10是依照本發明的第六實施例的太陽能電池的剖視示意圖。 10 is a schematic cross-sectional view of a solar cell according to a sixth embodiment of the present invention.

圖11是依照本發明的第七實施例的太陽能電池的俯視示意圖。 FIG. 11 is a schematic top view of a solar cell according to a seventh embodiment of the present invention.

圖12是圖11的太陽能電池的剖視示意圖。 FIG. 12 is a schematic cross-sectional view of the solar cell shown in FIG. 11 .

圖13是依照本發明的第八實施例的太陽能電池的俯視示意圖。 13 is a schematic top view of a solar cell according to an eighth embodiment of the present invention.

有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之一較佳實施例的詳細說明中,將可清楚的呈現。以下實施例中所提到的方向用語,例如:上、下、左、右、前或後等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明並非用來限制本發明。 The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. The directional terms mentioned in the following embodiments, such as: up, down, left, right, front or back, etc., are only directions referring to the attached drawings. Accordingly, the directional terms are used to illustrate and not to limit the invention.

圖1A是依照本發明的第一實施例的太陽能電池的俯視示意圖。圖1B是依照圖1A的另一種變形實施例的太陽能電池的俯視示意圖。圖2是圖1A的太陽能電池的剖視示意圖。圖2對應於圖1A的剖線A-A’、剖線B-B’和剖線C-C’。圖3是圖2的太陽 能電池的局部放大示意圖。圖3對應於圖2的局部區域I。圖4A是圖3的反射層的反射率對波長的曲線圖。圖4B是圖3的第一調色層的反射率對波長的曲線圖。圖4C是圖3的第二調色層的反射率對波長的曲線圖。圖5A至圖5C是依照本發明的另一些變形實施例的遮光結構的剖視示意圖。 FIG. 1A is a schematic top view of a solar cell according to a first embodiment of the present invention. FIG. 1B is a schematic top view of a solar cell according to another modified embodiment of FIG. 1A . FIG. 2 is a schematic cross-sectional view of the solar cell shown in FIG. 1A . Fig. 2 corresponds to section line A-A', section line B-B' and section line C-C' of Fig. 1A. Figure 3 is the sun of Figure 2 A partial enlarged schematic diagram of the battery. FIG. 3 corresponds to the partial area I of FIG. 2 . FIG. 4A is a graph of reflectivity versus wavelength for the reflective layer of FIG. 3 . FIG. 4B is a graph of reflectance versus wavelength for the first toning layer of FIG. 3 . FIG. 4C is a graph of reflectance versus wavelength for the second toning layer of FIG. 3 . 5A to 5C are schematic cross-sectional views of light-shielding structures according to other modified embodiments of the present invention.

請參照圖1A及圖2,太陽能電池10具有透光區TA,且包括基板100和光電轉換結構110。基板100的材質包括玻璃、石英、高分子材料(例如聚醯亞胺、聚碳酸酯)、或其他合適的基板材料。光電轉換結構110環繞透光區TA設置,且包括第一電極層EL1、光電轉換層PCL和第二電極層EL2。第一電極層EL1設置在基板100上。光電轉換層PCL設置在第一電極層EL1上。第二電極層EL2設置在光電轉換層PCL上。更具體地說,第一電極層EL1和第二電極層EL2設置在光電轉換層PCL的相對兩側,並且電性連接光電轉換層PCL。 Referring to FIG. 1A and FIG. 2 , the solar cell 10 has a light-transmitting area TA and includes a substrate 100 and a photoelectric conversion structure 110 . The material of the substrate 100 includes glass, quartz, polymer material (such as polyimide, polycarbonate), or other suitable substrate materials. The photoelectric conversion structure 110 is disposed around the light transmission area TA and includes a first electrode layer EL1 , a photoelectric conversion layer PCL and a second electrode layer EL2 . The first electrode layer EL1 is disposed on the substrate 100 . The photoelectric conversion layer PCL is disposed on the first electrode layer EL1. The second electrode layer EL2 is disposed on the photoelectric conversion layer PCL. More specifically, the first electrode layer EL1 and the second electrode layer EL2 are disposed on opposite sides of the photoelectric conversion layer PCL, and are electrically connected to the photoelectric conversion layer PCL.

在本實施例中,由於太陽能電池10適於從基板100背離光電轉換結構110的一側接收來自外部的環境光線(例如陽光),因此第一電極層EL1與第二電極層EL2分別為透光電極與反射電極。透光電極的材質包括金屬氧化物,例如:銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、或其它合適的氧化物、或者是上述至少兩者之堆疊層。反射電極的材質包括鋁、銀、鉻、上述的合金、上述的組合、或其他具有高反射率的金屬材料。 In this embodiment, since the solar cell 10 is suitable for receiving ambient light (such as sunlight) from the outside from the side of the substrate 100 facing away from the photoelectric conversion structure 110, the first electrode layer EL1 and the second electrode layer EL2 are respectively light-transmitting electrodes and reflective electrodes. The material of the light-transmitting electrode includes metal oxides, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable oxides, or a stacked layer of at least two of the above. The material of the reflective electrode includes aluminum, silver, chromium, the above alloys, the above combinations, or other metal materials with high reflectivity.

光電轉換層PCL的材質例如是非晶矽(amorphous silicon,a-Si),但不以此為限。在其他實施例中,光電轉換層PCL的材質也可以是單晶矽、多晶矽、銅銦鎵硒、銻化鎘、或上述的組合。詳細而言,光電轉換層PCL包括第一非本徵半導體層111、本徵半導體層112以及第二非本徵半導體層113。第一非本徵半導體層111具有第一摻雜類型,第二非本徵半導體層113具有第二摻雜類型,且第一摻雜類型與第二摻雜類型各自為P型與N型中的一者。舉例來說,在本實施例中,第一非本徵半導體層111可以是P型半導體層,而第二非本徵半導體層113可以是N型半導體層。 The material of the photoelectric conversion layer PCL is, for example, amorphous silicon (amorphous silicon, a-Si), but not limited thereto. In other embodiments, the material of the photoelectric conversion layer PCL may also be monocrystalline silicon, polycrystalline silicon, copper indium gallium selenide, cadmium antimonide, or a combination thereof. In detail, the photoelectric conversion layer PCL includes a first extrinsic semiconductor layer 111 , an intrinsic semiconductor layer 112 and a second extrinsic semiconductor layer 113 . The first extrinsic semiconductor layer 111 has a first doping type, the second extrinsic semiconductor layer 113 has a second doping type, and the first doping type and the second doping type are respectively P-type and N-type. one of. For example, in this embodiment, the first extrinsic semiconductor layer 111 may be a P-type semiconductor layer, and the second extrinsic semiconductor layer 113 may be an N-type semiconductor layer.

特別注意的是,光電轉換結構110的第二電極層EL2可定義出太陽能電池10的透光區TA,此透光區TA適於讓光線(例如:陽光或來自顯示面板的光線)通過。在本實施例中,太陽能電池10可應用在穿戴式的顯示裝置(例如智慧型手錶)上,而顯示裝置可藉由此透光區TA顯示例如時間、日期、訊息通知等資訊。舉例來說,為了增加太陽能電池10的收光面積,太陽能電池10還可包括設置在透光區TA內且彼此間隔排列的多條太陽能電池走線(未繪示)。這些太陽能電池走線可以延伸自環繞透光區TA的光電轉換結構110。亦即,位於透光區TA內的這些太陽能電池走線的層疊結構與光電轉換結構110的結構組成可選擇性地相同。 It is particularly noted that the second electrode layer EL2 of the photoelectric conversion structure 110 can define a light-transmitting area TA of the solar cell 10 , and the light-transmitting area TA is suitable for allowing light (such as sunlight or light from a display panel) to pass through. In this embodiment, the solar cell 10 can be applied to a wearable display device (such as a smart watch), and the display device can display information such as time, date, message notification, etc. through the light-transmitting area TA. For example, in order to increase the light-receiving area of the solar cell 10 , the solar cell 10 may further include a plurality of solar cell wires (not shown) arranged in the light-transmitting area TA and arranged at intervals. These solar cell traces may extend from the photoelectric conversion structure 110 surrounding the light transmission area TA. That is to say, the stacked structure of the solar cell traces located in the light-transmitting area TA and the structure composition of the photoelectric conversion structure 110 can optionally be the same.

在本實施例中,太陽能電池10還可選擇性地包括虛設(dummy)的光電轉換結構DM。此虛設的光電轉換結構DM與光電轉換結構110的層疊結構與組成相同(亦即,可為相同膜層製 作而成),但彼此電性分離。例如,虛設的光電轉換結構DM的第二電極層EL2d與光電轉換結構110的第二電極層EL2(或者是,虛設的光電轉換結構DM的第一電極層EL1d與光電轉換結構110的第一電極層EL1)各自電性獨立,且虛設的光電轉換結構DM的第二電極層EL2d可具有一浮置電位(floating),但不以此為限。 In this embodiment, the solar cell 10 may also optionally include a dummy photoelectric conversion structure DM. The stacked structure and composition of the dummy photoelectric conversion structure DM and the photoelectric conversion structure 110 are the same (that is, they can be made of the same film layer). made), but electrically separated from each other. For example, the second electrode layer EL2d of the dummy photoelectric conversion structure DM and the second electrode layer EL2 of the photoelectric conversion structure 110 (or, the first electrode layer EL1d of the dummy photoelectric conversion structure DM and the first electrode of the photoelectric conversion structure 110 The layers EL1) are electrically independent, and the second electrode layer EL2d of the dummy photoelectric conversion structure DM may have a floating potential (floating), but not limited thereto.

為了將光電轉換結構110以及透光區TA內的太陽能電池走線受光線照射所產生的電訊號傳輸至儲能元件或顯示元件,太陽能電池10還包括金屬導電層120,且至少部分金屬導電層120與光電轉換結構110之間設有間隙G1a。在本實施例中,光電轉換結構110的第二電極層EL2和虛設的光電轉換結構DM的第二電極層EL2d可界定出此間隙G1a。然而,本發明不限於此。根據其他實施例,此間隙G1a也可以由金屬導電層120中環繞光電轉換結構110的部分和光電轉換結構110來界定。 In order to transmit the electric signal generated by the photoelectric conversion structure 110 and the solar cell wiring in the light transmission area TA to the energy storage element or display element, the solar cell 10 also includes a metal conductive layer 120, and at least part of the metal conductive layer A gap G1a is provided between 120 and the photoelectric conversion structure 110 . In this embodiment, the second electrode layer EL2 of the photoelectric conversion structure 110 and the second electrode layer EL2d of the dummy photoelectric conversion structure DM may define the gap G1a. However, the present invention is not limited thereto. According to other embodiments, the gap G1a may also be defined by the portion of the metal conductive layer 120 surrounding the photoelectric conversion structure 110 and the photoelectric conversion structure 110 .

舉例來說,在本實施例中,金屬導電層120包括彼此電性分離且環繞光電轉換結構110設置的第一傳輸線121和第二傳輸線122。第一傳輸線121電性連接光電轉換結構110的第一電極層EL1,且第二傳輸線122電性連接光電轉換結構110的第二電極層EL2。亦即,第一傳輸線121和第二傳輸線122是用於傳輸不同極性的電信號,例如:第一傳輸線121是用來傳輸來自第一非本徵半導體層111的正極信號,而第二傳輸線122是用來傳輸來自第二非本徵半導體層113的負極信號。 For example, in this embodiment, the metal conductive layer 120 includes a first transmission line 121 and a second transmission line 122 that are electrically separated from each other and disposed around the photoelectric conversion structure 110 . The first transmission line 121 is electrically connected to the first electrode layer EL1 of the photoelectric conversion structure 110 , and the second transmission line 122 is electrically connected to the second electrode layer EL2 of the photoelectric conversion structure 110 . That is, the first transmission line 121 and the second transmission line 122 are used to transmit electrical signals of different polarities, for example: the first transmission line 121 is used to transmit the positive signal from the first extrinsic semiconductor layer 111, while the second transmission line 122 is used to transmit the negative signal from the second extrinsic semiconductor layer 113 .

在本實施例中,金屬導電層120還可選擇性地包括延伸 自第一傳輸線121且重疊於光電轉換結構110的環狀電極123。此處的重疊關係例如是指兩構件沿著垂直於基板100的方向(例如方向Z)的投影相重疊。以下若未特別提及,則任兩構件的重疊關係都是以此方式來界定,便不再贅述。詳細而言,金屬導電層120與光電轉換結構110之間還可設有絕緣層150,第一傳輸線121可經由絕緣層150的多個接觸孔150a與第一電極層EL1電性連接,而第二傳輸線122可經由絕緣層150的接觸孔150b與第二電極層EL2電性連接。在本實施例中,光電轉換結構110的光電轉換層PCL和第二電極層EL2可具有多個開口OP,絕緣層150填入這些開口OP內,且多個接觸孔150a分別重疊於這些開口OP設置,以暴露出第一電極層EL1的部分表面。 In this embodiment, the metal conductive layer 120 may also optionally include extensions From the first transmission line 121 and overlapping the ring electrode 123 of the photoelectric conversion structure 110 . The overlapping relationship here means, for example, that the projections of the two components along a direction perpendicular to the substrate 100 (eg, the direction Z) overlap. If not specifically mentioned below, the overlapping relationship between any two components is defined in this way, and will not be described again. In detail, an insulating layer 150 may also be provided between the metal conductive layer 120 and the photoelectric conversion structure 110, the first transmission line 121 may be electrically connected to the first electrode layer EL1 through a plurality of contact holes 150a of the insulating layer 150, and the second The second transmission line 122 can be electrically connected to the second electrode layer EL2 through the contact hole 150 b of the insulating layer 150 . In this embodiment, the photoelectric conversion layer PCL and the second electrode layer EL2 of the photoelectric conversion structure 110 may have a plurality of openings OP, and the insulating layer 150 fills these openings OP, and a plurality of contact holes 150a respectively overlap these openings OP set to expose part of the surface of the first electrode layer EL1.

為了確保第一傳輸線121與第二傳輸線122電性分離,兩傳輸線之間還設有間隙G1b和間隙G1c,且第二傳輸線122與環狀電極123之間設有間隙G1a。也因此,本揭露的太陽能電池10還包括用來遮擋這些間隙的遮光結構130。舉例來說,遮光結構130沿著方向Z完全覆蓋間隙G1a、間隙G1b和間隙G1c。據此,可解決太陽能電池應用在顯示裝置上時,這些間隙設計所造成的漏光問題。 In order to ensure the electrical separation of the first transmission line 121 and the second transmission line 122 , a gap G1 b and a gap G1 c are provided between the two transmission lines, and a gap G1 a is provided between the second transmission line 122 and the ring electrode 123 . Therefore, the solar cell 10 of the present disclosure further includes a light shielding structure 130 for shielding these gaps. For example, the light shielding structure 130 completely covers the gap G1a, the gap G1b and the gap G1c along the direction Z. Accordingly, the problem of light leakage caused by these gap designs can be solved when the solar cell is applied on the display device.

請同時參照圖3,遮光結構130例如是一個反射層131和至少一調色層的堆疊結構,其中調色層是位在反射層131與基板100之間。反射層131的材料包括鉬鉭合金(MoTa)。調色層的材料包括氧化鉬(MoOx)或氮化鉬(MoNx)。較佳地,反射層131 的膜厚可介於100nm至2000nm之間。調色層的膜厚可介於5nm至100nm之間。 Please also refer to FIG. 3 , the light-shielding structure 130 is, for example, a stacked structure of a reflective layer 131 and at least one toning layer, wherein the toning layer is located between the reflective layer 131 and the substrate 100 . The material of the reflective layer 131 includes molybdenum-tantalum alloy (MoTa). The material of the toning layer includes molybdenum oxide (MoO x ) or molybdenum nitride (MoN x ). Preferably, the film thickness of the reflective layer 131 may be between 100 nm and 2000 nm. The film thickness of the toning layer can be between 5nm and 100nm.

舉例來說,在本實施例中,遮光結構130的調色層數量為兩個,分別為調色層133和調色層135,其中調色層133位在調色層135與反射層131之間。特別注意的是,這兩個調色層的其中一者的材料可以是氧化鉬,而另一者的材料可以是氮化鉬,例如:調色層133和調色層135分別是由氧化鉬和氮化鉬製作而成。 For example, in this embodiment, the number of toning layers of the shading structure 130 is two, namely the toning layer 133 and the toning layer 135, wherein the toning layer 133 is located between the toning layer 135 and the reflective layer 131 between. It should be noted that the material of one of the two toning layers can be molybdenum oxide, while the material of the other can be molybdenum nitride, for example: the toning layer 133 and the toning layer 135 are respectively made of molybdenum oxide and molybdenum nitride.

請同時參照圖4A至圖4C,反射層131對於可見光(例如波長介於400nm至700nm之間的光線)的反射率大於46%(如圖4A所示)。由氧化鉬製作而成的調色層133對於可見光的反射率會隨著波長的增加而遞減(如圖4B所示)。相反地,由氮化鉬製作而成的調色層135對於可見光的反射率會隨著波長的增加而遞增(如圖4C所示)。也就是說,本實施例的調色層133適於反射短波長的可見光(例如藍光和紫光)而調色層135適於反射長波長的可見光(例如紅光和綠光)。 Please refer to FIG. 4A to FIG. 4C at the same time. The reflection rate of the reflective layer 131 for visible light (such as light with a wavelength between 400nm and 700nm) is greater than 46% (as shown in FIG. 4A ). The reflectivity of the toning layer 133 made of molybdenum oxide for visible light decreases with increasing wavelength (as shown in FIG. 4B ). On the contrary, the reflectivity of the toning layer 135 made of molybdenum nitride for visible light increases with the increase of the wavelength (as shown in FIG. 4C ). That is to say, the toning layer 133 of this embodiment is suitable for reflecting short-wavelength visible light (such as blue light and purple light) and the toning layer 135 is suitable for reflecting long-wavelength visible light (such as red light and green light).

特別注意的是,調色層的反射率對於波長的變化率會隨著不同的膜厚而改變。例如:由氧化鉬製作而成的調色層133的反射率對波長的變化率會隨著調色層133的膜厚增加而減小(如圖4B所示),而由氮化鉬製作而成的調色層135的反射率對波長的變化率會隨著調色層135的膜厚增加而變大(如圖4C所示)。 It should be noted that the change rate of the reflectivity of the coloring layer with respect to the wavelength will change with different film thicknesses. For example: the rate of change of the reflectance of the coloring layer 133 made of molybdenum oxide to wavelength will decrease as the film thickness of the coloring layer 133 increases (as shown in FIG. 4B ), while that made of molybdenum nitride The change rate of the reflectance of the formed toning layer 135 with respect to wavelength will become larger as the film thickness of the toning layer 135 increases (as shown in FIG. 4C ).

因此,透過調色層的層數、材料以及膜厚的設計,可改變遮光結構130的反射頻譜,使其接近光電轉換結構110的反射 頻譜,以有效改善太陽能電池在環境光線照射下所產生的外觀顏色不一致的問題。換句話說,可縮減光線在經由光電轉換結構110與遮光結構130的反射後的色度差異,有助於提升太陽能電池10的整體視效。 Therefore, through the design of the number of layers, materials and film thickness of the toning layer, the reflection spectrum of the light-shielding structure 130 can be changed, making it close to the reflection spectrum of the photoelectric conversion structure 110. Spectrum, to effectively improve the problem of inconsistent appearance and color of solar cells under ambient light. In other words, the difference in chromaticity of the light after being reflected by the photoelectric conversion structure 110 and the light shielding structure 130 can be reduced, which helps to improve the overall visual effect of the solar cell 10 .

特別說明的是,本發明並不限制調色層133和調色層135的層疊順序,例如:在另一實施例的遮光結構130B1中,由氮化鉬製作而成的調色層135也可設置在由氧化鉬製作而成的調色層133與反射層131之間(如圖5A所示)。另一方面,本發明也並未限制調色層的配置數量。在又一實施例中,調色層的數量也可以是一個,例如是由氧化鉬製作而成的調色層133(如圖5B的遮光結構130B2所示)或由氮化鉬製作而成的調色層135(如圖5C的遮光結構130B3所示)。 In particular, the present invention does not limit the stacking order of the toning layer 133 and the toning layer 135. For example, in the light-shielding structure 130B1 of another embodiment, the toning layer 135 made of molybdenum nitride can also be It is disposed between the toning layer 133 made of molybdenum oxide and the reflective layer 131 (as shown in FIG. 5A ). On the other hand, the present invention does not limit the number of configurations of the toning layers. In yet another embodiment, the number of toning layers can also be one, for example, a toning layer 133 made of molybdenum oxide (as shown in the light-shielding structure 130B2 in FIG. 5B ) or a toning layer 133 made of molybdenum nitride. The toning layer 135 (shown as the light-shielding structure 130B3 in FIG. 5C ).

請繼續參照圖2,在本實施例中,遮光結構130可選擇性地設置在第一電極層EL1與基板100之間,且部分重疊於光電轉換結構110的第一電極層EL1和虛設的光電轉換結構DM的第一電極層EL1d。為了避免光電轉換結構110的第一電極層EL1、虛設的光電轉換結構DM的第一電極層EL1d以及遮光結構130間的電性連接,太陽能電池10還可包括包覆遮光結構130的絕緣層160。絕緣層160的材料包括氮化矽(SiNx),且膜厚可介於10nm至2000nm之間。 Please continue to refer to FIG. 2. In this embodiment, the light-shielding structure 130 can be selectively disposed between the first electrode layer EL1 and the substrate 100, and partially overlaps the first electrode layer EL1 of the photoelectric conversion structure 110 and the dummy photoelectric The first electrode layer EL1d of the conversion structure DM. In order to avoid electrical connection between the first electrode layer EL1 of the photoelectric conversion structure 110, the first electrode layer EL1d of the dummy photoelectric conversion structure DM and the light-shielding structure 130, the solar cell 10 may further include an insulating layer 160 covering the light-shielding structure 130 . The material of the insulating layer 160 includes silicon nitride (SiN x ), and the film thickness can be between 10 nm and 2000 nm.

在本實施例中,金屬導電層120的第一傳輸線121、第二傳輸線122和環狀電極123、光電轉換結構110、虛設的光電轉換 結構DM以及遮光結構130在基板100上的正投影輪廓例如是圓弧狀,但不以此為限。在另一實施例中,太陽能電池10A的金屬導電層120A的第一傳輸線121A、第二傳輸線122A和環狀電極123A、光電轉換結構110A、虛設的光電轉換結構DM-A以及遮光結構130A在基板100上的正投影輪廓也可以是矩形狀(如圖1B所示)。 In this embodiment, the first transmission line 121, the second transmission line 122 and the ring electrode 123 of the metal conductive layer 120, the photoelectric conversion structure 110, and the dummy photoelectric conversion The orthographic profile of the structure DM and the light-shielding structure 130 on the substrate 100 is, for example, arc-shaped, but not limited thereto. In another embodiment, the first transmission line 121A, the second transmission line 122A, the ring electrode 123A, the photoelectric conversion structure 110A, the dummy photoelectric conversion structure DM-A and the light shielding structure 130A of the metal conductive layer 120A of the solar cell 10A are on the substrate The orthographic profile on 100 may also be rectangular (as shown in FIG. 1B ).

以下將列舉另一些實施例以詳細說明本揭露,其中相同的構件將標示相同的符號,並且省略相同技術內容的說明,省略部分請參考前述實施例,以下不再贅述。 Some other embodiments will be listed below to describe the present disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted.

圖6是依照本發明的第二實施例的太陽能電池的剖視示意圖。請參照圖6,本實施例的太陽能電池10B與圖2的太陽能電池10的差異在於:遮光結構的配置膜層不同。在本實施例中,太陽能電池10B的遮光結構130C是設置在光電轉換結構110與金屬導電層120之間。更具體地說,遮光結構130C是設置在光電轉換結構110和虛設的光電轉換結構DM上,並且覆蓋光電轉換結構110和虛設的光電轉換結構DM定義間隙G1a的側壁110s和側壁DMs。 6 is a schematic cross-sectional view of a solar cell according to a second embodiment of the present invention. Please refer to FIG. 6 , the difference between the solar cell 10B of this embodiment and the solar cell 10 in FIG. 2 lies in that the film layers of the light-shielding structure are different. In this embodiment, the light shielding structure 130C of the solar cell 10B is disposed between the photoelectric conversion structure 110 and the metal conductive layer 120 . More specifically, the light shielding structure 130C is disposed on the photoelectric conversion structure 110 and the dummy photoelectric conversion structure DM, and covers the sidewall 110s and the sidewall DMs of the photoelectric conversion structure 110 and the dummy photoelectric conversion structure DM to define the gap G1a.

為了避免光電轉換結構110的第一電極層EL1和第二電極層EL2、虛設的光電轉換結構DM的第一電極層EL1d和第二電極層EL2d以及遮光結構130C間的電性連接,太陽能電池10B的絕緣層160A是改設置在遮光結構130C、光電轉換結構110和虛設的光電轉換結構DM之間。由於本實施例的遮光結構130C的細 部組成以及所產生的技術效果都相似於圖3的遮光結構130,因此詳細的說明請參見前述實施例的相關段落,於此便不再贅述。 In order to avoid electrical connection between the first electrode layer EL1 and the second electrode layer EL2 of the photoelectric conversion structure 110, the first electrode layer EL1d and the second electrode layer EL2d of the dummy photoelectric conversion structure DM, and the light shielding structure 130C, the solar cell 10B The insulating layer 160A is disposed between the light shielding structure 130C, the photoelectric conversion structure 110 and the dummy photoelectric conversion structure DM. Due to the fineness of the light-shielding structure 130C of this embodiment The internal components and the resulting technical effects are similar to the light-shielding structure 130 in FIG. 3 , so please refer to the relevant paragraphs of the foregoing embodiments for detailed description, and will not be repeated here.

圖7是依照本發明的第三實施例的太陽能電池的剖視示意圖。圖8是依照本發明的第四實施例的太陽能電池的剖視示意圖。請參照圖7,本實施例的太陽能電池10C與圖2的太陽能電池10的差異在於:遮光結構的配置膜層不同。在本實施例中,太陽能電池10C的遮光結構130D是設置在絕緣層150上,並且完全覆蓋金屬導電層120中重疊於間隙G1a的開口120OP。在本實施例中,遮光結構130D還覆蓋金屬導電層120的部分環狀電極123和部分第二傳輸線122。為了避免金屬導電層120的環狀電極123(或第一傳輸線)、第二傳輸線122以及遮光結構130D間的電性連接,太陽能電池10C的絕緣層160B是設置在遮光結構130D與金屬導電層120之間。 7 is a schematic cross-sectional view of a solar cell according to a third embodiment of the present invention. 8 is a schematic cross-sectional view of a solar cell according to a fourth embodiment of the present invention. Please refer to FIG. 7 , the difference between the solar cell 10C of this embodiment and the solar cell 10 in FIG. 2 lies in that the film layers of the light-shielding structure are different. In this embodiment, the light-shielding structure 130D of the solar cell 10C is disposed on the insulating layer 150 and completely covers the opening 120OP overlapping the gap G1a in the metal conductive layer 120 . In this embodiment, the light shielding structure 130D also covers part of the ring electrode 123 and part of the second transmission line 122 of the metal conductive layer 120 . In order to avoid the electrical connection between the annular electrode 123 (or the first transmission line) of the metal conductive layer 120, the second transmission line 122 and the light-shielding structure 130D, the insulating layer 160B of the solar cell 10C is arranged between the light-shielding structure 130D and the metal conductive layer 120 between.

然而,本發明不限於此。根據其他實施例,太陽能電池10D的遮光結構130E(或絕緣層160C)除了完全覆蓋金屬導電層120的開口120OP外,還可僅覆蓋金屬導電層120的環狀電極123,並且未覆蓋第二傳輸線122,如圖8所示。亦即,遮光結構130E可相對於開口120OP呈非對稱分布。不難理解的是,在一未繪示的實施例中,遮光結構也可僅覆蓋金屬導電層120的開口120OP和第二傳輸線122,並且未覆蓋環狀電極123。 However, the present invention is not limited thereto. According to other embodiments, in addition to completely covering the opening 120OP of the metal conducting layer 120, the light-shielding structure 130E (or insulating layer 160C) of the solar cell 10D may only cover the ring-shaped electrode 123 of the metal conducting layer 120 and not cover the second transmission line. 122, as shown in Figure 8. That is, the light shielding structures 130E may be distributed asymmetrically with respect to the openings 120OP. It is not difficult to understand that, in an unillustrated embodiment, the light shielding structure may only cover the opening 120OP of the metal conductive layer 120 and the second transmission line 122 , and not cover the ring electrode 123 .

由於圖7的遮光結構130D和圖8的遮光結構130E各自的細部組成以及所產生的技術效果都相似於圖3的遮光結構 130,因此詳細的說明請參見前述實施例的相關段落,於此便不再贅述。 Since the detailed components of the light-shielding structure 130D in FIG. 7 and the light-shielding structure 130E in FIG. 8 and the resulting technical effects are similar to the light-shielding structure in FIG. 3 130. For detailed description, please refer to the relevant paragraphs of the foregoing embodiments, and details are not repeated here.

圖9是依照本發明的第五實施例的太陽能電池的剖視示意圖。請參照圖9,在本實施例中,雖然遮光結構130F如同圖6的遮光結構130C是設置在光電轉換結構110與金屬導電層120之間,但不同的地方在於本實施例的遮光結構130F是設置在絕緣層150上,且部分重疊於金屬導電層120的部分環狀電極123和部分第二傳輸線122(或第一傳輸線)。為了避免金屬導電層120的環狀電極123(或第一傳輸線)、第二傳輸線122以及遮光結構130F間的電性連接,太陽能電池10E的絕緣層160D是設置在遮光結構130F與金屬導電層120之間。亦即,遮光結構130F電性絕緣於金屬導電層120和光電轉換結構110。 9 is a schematic cross-sectional view of a solar cell according to a fifth embodiment of the present invention. Please refer to FIG. 9, in this embodiment, although the light shielding structure 130F is arranged between the photoelectric conversion structure 110 and the metal conductive layer 120 like the light shielding structure 130C in FIG. A part of the ring electrode 123 and a part of the second transmission line 122 (or the first transmission line) are disposed on the insulating layer 150 and partially overlap the metal conductive layer 120 . In order to avoid the electrical connection between the annular electrode 123 (or the first transmission line) of the metal conductive layer 120, the second transmission line 122 and the light-shielding structure 130F, the insulating layer 160D of the solar cell 10E is arranged between the light-shielding structure 130F and the metal conductive layer 120 between. That is, the light shielding structure 130F is electrically insulated from the metal conductive layer 120 and the photoelectric conversion structure 110 .

由於本實施例的遮光結構130F的細部組成以及所產生的技術效果都相似於圖3的遮光結構130,因此詳細的說明請參見前述實施例的相關段落,於此便不再贅述。 Since the detailed composition and technical effects of the light-shielding structure 130F in this embodiment are similar to the light-shielding structure 130 in FIG. 3 , please refer to the relevant paragraphs of the above-mentioned embodiments for detailed description, and will not be repeated here.

圖10是依照本發明的第六實施例的太陽能電池的剖視示意圖。請參照圖10,本實施例的太陽能電池10F與圖8的太陽能電池10D的差異在於:太陽能電池10F的遮光結構130G並未完全覆蓋金屬導電層120的開口120OP,但仍完全覆蓋光電轉換結構110與虛設的光電轉換結構DM之間的間隙G1a(或圖1A的間隙G1b和間隙G1c)。由於本實施例的遮光結構130G的細部組成以及所產生的技術效果都相似於圖3的遮光結構130,因此詳細的 說明請參見前述實施例的相關段落,於此便不再贅述。 10 is a schematic cross-sectional view of a solar cell according to a sixth embodiment of the present invention. Please refer to FIG. 10 , the difference between the solar cell 10F of this embodiment and the solar cell 10D in FIG. 8 is that the light-shielding structure 130G of the solar cell 10F does not completely cover the opening 120OP of the metal conductive layer 120 , but still completely covers the photoelectric conversion structure 110 The gap G1a (or the gap G1b and the gap G1c in FIG. 1A ) between the dummy photoelectric conversion structure DM. Since the detailed composition and technical effects of the light-shielding structure 130G in this embodiment are similar to the light-shielding structure 130 in FIG. 3 , the detailed For description, please refer to the relevant paragraphs of the foregoing embodiments, and details will not be repeated here.

特別注意的是,由於本實施例的遮光結構130G與金屬導電層120的第二傳輸線122在基板100上的兩正投影彼此分離開來,即使遮光結構130G與環狀電極123之間未設有如圖8的絕緣層160C,仍可確保環狀電極123(或第一傳輸線121)與第二傳輸線122間的電性分離。也因此,遮光結構130G的設置還可降低環狀電極123的整體阻抗。不難理解的是,在一未繪示的實施例中,遮光結構也可改接觸第二傳輸線122並且與環狀電極123分離開來,以降低第二傳輸線122的整體阻抗。 It should be noted that since the two orthographic projections of the light-shielding structure 130G and the second transmission line 122 of the metal conductive layer 120 on the substrate 100 in this embodiment are separated from each other, even if there is no such thing as the light-shielding structure 130G and the ring-shaped electrode 123 The insulating layer 160C in FIG. 8 can still ensure the electrical separation between the ring electrode 123 (or the first transmission line 121 ) and the second transmission line 122 . Therefore, the arrangement of the light shielding structure 130G can also reduce the overall impedance of the ring electrode 123 . It is not difficult to understand that, in an unillustrated embodiment, the light-shielding structure may also contact the second transmission line 122 and be separated from the ring electrode 123 to reduce the overall impedance of the second transmission line 122 .

圖11是依照本發明的第七實施例的太陽能電池的俯視示意圖。圖12是圖11的太陽能電池的剖視示意圖。圖12對應於圖11的剖線D-D’、剖線E-E’和剖線F-F’。請參照圖11及圖12,在本實施例中,太陽能電池20的金屬導電層120B不具有如圖1的環狀電極123。光電轉換結構110B的第一電極層EL1A具有朝向第一傳輸線121伸出的凸出部EL1p,且第一傳輸線121經由此凸出部EL1p與第一電極層EL1A電性連接。光電轉換結構110B的第二電極層EL2A具有朝向第二傳輸線122伸出的凸出部EL2p,且第二傳輸線122經由此凸出部EL2p與第二電極層EL2A電性連接。 FIG. 11 is a schematic top view of a solar cell according to a seventh embodiment of the present invention. FIG. 12 is a schematic cross-sectional view of the solar cell shown in FIG. 11 . Fig. 12 corresponds to the section line D-D', the section line E-E' and the section line F-F' of Fig. 11 . Please refer to FIG. 11 and FIG. 12 , in this embodiment, the metal conductive layer 120B of the solar cell 20 does not have the ring electrode 123 as shown in FIG. 1 . The first electrode layer EL1A of the photoelectric conversion structure 110B has a protrusion EL1p extending toward the first transmission line 121 , and the first transmission line 121 is electrically connected to the first electrode layer EL1A through the protrusion EL1p. The second electrode layer EL2A of the photoelectric conversion structure 110B has a protrusion EL2p extending toward the second transmission line 122 , and the second transmission line 122 is electrically connected to the second electrode layer EL2A through the protrusion EL2p.

由於本實施例的遮光結構130的細部組成以及所產生的技術效果都相同於圖3的遮光結構130,因此詳細的說明請參見前述實施例的相關段落,於此便不再贅述。 Since the detailed composition and technical effects of the light-shielding structure 130 of this embodiment are the same as those of the light-shielding structure 130 in FIG. 3 , please refer to the relevant paragraphs of the above-mentioned embodiments for detailed description, and will not be repeated here.

圖13是依照本發明的第八實施例的太陽能電池的俯視示意圖。請參照圖13,本實施例的太陽能電池20A與圖11的太陽能電池20的差異在於:光電轉換結構的設計不同。在本實施例中,太陽能電池20A的光電轉換結構110C可區分為第一部分110C1和第二部分110C2,且第一部分110C1與第二部分110C2之間具有間隙G2a和間隙G2b。此處的兩間隙例如是由第一部分110C1的第二電極層EL2B和第二部分110C2的第二電極層EL2B所界定。也因此,本實施例的遮光結構130H進一步覆蓋間隙G2a和間隙G2b,以解決這些間隙所產生的漏光問題以及太陽能電池的整體外觀顏色不一致的問題。 13 is a schematic top view of a solar cell according to an eighth embodiment of the present invention. Please refer to FIG. 13 , the difference between the solar cell 20A of this embodiment and the solar cell 20 in FIG. 11 lies in that the design of the photoelectric conversion structure is different. In this embodiment, the photoelectric conversion structure 110C of the solar cell 20A can be divided into a first part 110C1 and a second part 110C2 , and there is a gap G2a and a gap G2b between the first part 110C1 and the second part 110C2 . The two gaps here are defined by, for example, the second electrode layer EL2B of the first part 110C1 and the second electrode layer EL2B of the second part 110C2 . Therefore, the light-shielding structure 130H of this embodiment further covers the gap G2a and the gap G2b to solve the problem of light leakage caused by these gaps and the problem of inconsistent color of the overall appearance of the solar cell.

在本實施例中,光電轉換結構110C的第一部分110C1和第二部分110C2可彼此串接,例如:第一部分110C1的第二電極層EL2B可電性連接第二部分110C2的第一電極層,第一傳輸線121電性連接第一部分110C1的第一電極層EL1B,第二傳輸線122電性連接第二部分110C2的第二電極層EL2B。 In this embodiment, the first part 110C1 and the second part 110C2 of the photoelectric conversion structure 110C can be connected in series, for example: the second electrode layer EL2B of the first part 110C1 can be electrically connected to the first electrode layer of the second part 110C2, the second A transmission line 121 is electrically connected to the first electrode layer EL1B of the first part 110C1, and a second transmission line 122 is electrically connected to the second electrode layer EL2B of the second part 110C2.

綜上所述,在本發明的一實施例的太陽能電池中,環繞光電轉換結構設置的至少部分金屬導電層與光電轉換結構間設有第一間隙。透過遮光結構覆蓋此第一間隙,除了可解決顯示應用時的漏光問題,還可以有效改善太陽能電池在光線照射下的外觀顏色不一致的現象,進而提升太陽能電池的整體視效。 To sum up, in the solar cell according to an embodiment of the present invention, at least part of the metal conductive layer disposed around the photoelectric conversion structure is provided with a first gap between the photoelectric conversion structure. Covering the first gap through the light-shielding structure can not only solve the light leakage problem in display applications, but also effectively improve the appearance and color inconsistency of the solar cell under light irradiation, thereby improving the overall visual effect of the solar cell.

10:太陽能電池 10: Solar cells

100:基板 100: Substrate

110:光電轉換結構 110:Photoelectric conversion structure

120:金屬導電層 120: metal conductive layer

121:第一傳輸線 121: The first transmission line

122:第二傳輸線 122: Second transmission line

123:環狀電極 123: ring electrode

130:遮光結構 130: Shading structure

150a、150b:接觸孔 150a, 150b: contact holes

DM:虛設的光電轉換結構 DM: dummy photoelectric conversion structure

EL2、EL2d:第二電極層 EL2, EL2d: second electrode layer

G1a、G1b、G1c:間隙 G1a, G1b, G1c: Gap

TA:透光區 TA: Translucent area

Z:方向 Z: Direction

A-A’、B-B’、C-C’:剖線 A-A', B-B', C-C': broken line

Claims (10)

一種太陽能電池,具有一透光區,且包括:一基板;一光電轉換結構,環繞該透光區設置,且包括:一第一電極層,設置在該基板上;一光電轉換層,設置在該第一電極層上;以及一第二電極層,設置在該光電轉換層上;一金屬導電層,環繞該光電轉換結構設置,其中至少部分該金屬導電層與該光電轉換結構之間設有一第一間隙;以及一遮光結構,完全覆蓋該第一間隙,該遮光結構具有彼此堆疊的一第一調色層和一反射層,該第一調色層位在該基板與該反射層之間,該第一調色層的材料包括氧化鉬和氮化鉬的其中一者,該反射層的材料包括鉬鉭合金。 A solar cell has a light transmission area, and includes: a substrate; a photoelectric conversion structure, arranged around the light transmission area, and includes: a first electrode layer, arranged on the substrate; a photoelectric conversion layer, arranged on On the first electrode layer; and a second electrode layer, disposed on the photoelectric conversion layer; a metal conductive layer, disposed around the photoelectric conversion structure, wherein at least part of the metal conductive layer and the photoelectric conversion structure are provided with a a first gap; and a light shielding structure completely covering the first gap, the light shielding structure has a first toning layer and a reflective layer stacked on each other, the first toning layer is located between the substrate and the reflective layer The material of the first toning layer includes one of molybdenum oxide and molybdenum nitride, and the material of the reflective layer includes molybdenum-tantalum alloy. 如請求項1所述的太陽能電池,其中該遮光結構還具有設置在該基板與該反射層之間的一第二調色層,該第二調色層的材料包括氧化鉬和氮化鉬的其中另一者。 The solar cell as claimed in claim 1, wherein the light-shielding structure further has a second toning layer disposed between the substrate and the reflective layer, and the material of the second toning layer includes molybdenum oxide and molybdenum nitride the other one. 如請求項1所述的太陽能電池,其中該金屬導電層包括彼此電性分離且環繞該光電轉換結構設置的一第一傳輸線和一第二傳輸線,該第一傳輸線電性連接該第一電極層,該第二傳輸線電性連接該第二電極層。 The solar cell as claimed in claim 1, wherein the metal conductive layer includes a first transmission line and a second transmission line electrically separated from each other and arranged around the photoelectric conversion structure, the first transmission line is electrically connected to the first electrode layer , the second transmission line is electrically connected to the second electrode layer. 如請求項3所述的太陽能電池,其中該金屬導電層還包括延伸自該第一傳輸線且重疊於該光電轉換結構的一環狀電極,且該環狀電極與該第二傳輸線之間設有該第一間隙。 The solar cell as claimed in item 3, wherein the metal conductive layer further includes a ring-shaped electrode extending from the first transmission line and overlapping the photoelectric conversion structure, and a ring-shaped electrode is provided between the ring-shaped electrode and the second transmission line the first gap. 如請求項4所述的太陽能電池,其中該遮光結構設置在該金屬導電層上,該遮光結構直接接觸該環狀電極和該第二傳輸線的其中一者,並且與該環狀電極和該第二傳輸線的其中另一者電性分離。 The solar cell according to claim 4, wherein the light-shielding structure is disposed on the metal conductive layer, the light-shielding structure directly contacts one of the ring-shaped electrode and the second transmission line, and is in contact with the ring-shaped electrode and the second transmission line The other of the two transmission lines is electrically separated. 如請求項1所述的太陽能電池,其中該光電轉換結構區分為一第一部分和一第二部分,該第一部分和該第二部分之間具有一第二間隙,且該遮光結構還覆蓋該第二間隙。 The solar cell as claimed in claim 1, wherein the photoelectric conversion structure is divided into a first part and a second part, there is a second gap between the first part and the second part, and the light-shielding structure also covers the first part Two gaps. 如請求項1所述的太陽能電池,其中該遮光結構位在該第一電極層與該基板之間,且部分重疊於該第一電極層,該第一電極層與該遮光結構之間設有一絕緣層。 The solar cell according to claim 1, wherein the light-shielding structure is located between the first electrode layer and the substrate, and partially overlaps the first electrode layer, and a Insulation. 如請求項1所述的太陽能電池,其中該遮光結構設置在該光電轉換結構上,並且覆蓋該光電轉換結構定義該第一間隙的一側壁,該光電轉換結構與該遮光結構之間設有一絕緣層。 The solar cell as claimed in item 1, wherein the light-shielding structure is disposed on the photoelectric conversion structure, and covers the side wall of the photoelectric conversion structure defining the first gap, and an insulation is provided between the photoelectric conversion structure and the light-shielding structure layer. 如請求項1所述的太陽能電池,其中該遮光結構設置在該金屬導電層上,該金屬導電層具有重疊於該第一間隙的一開口,該遮光結構完全覆蓋該開口,且該金屬導電層與該遮光結構之間設有一絕緣層。 The solar cell according to claim 1, wherein the light-shielding structure is disposed on the metal conductive layer, the metal conductive layer has an opening overlapping the first gap, the light-shielding structure completely covers the opening, and the metal conductive layer An insulating layer is arranged between the light-shielding structure. 如請求項1所述的太陽能電池,其中該遮光結構設置在該金屬導電層與該光電轉換結構之間,且電性絕緣於該金屬導電層和該光電轉換結構。 The solar cell according to claim 1, wherein the light-shielding structure is disposed between the metal conductive layer and the photoelectric conversion structure, and is electrically insulated from the metal conductive layer and the photoelectric conversion structure.
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4920105B2 (en) * 2010-01-22 2012-04-18 シャープ株式会社 Light transmissive solar cell module, method for manufacturing the same, and moving body equipped with the light transmissive solar cell module
CN103123923A (en) * 2013-01-31 2013-05-29 中国科学院苏州纳米技术与纳米仿生研究所 Laser photovoltaic cell and manufacturing method thereof
US20130263909A1 (en) * 2011-08-30 2013-10-10 Sanyo Electric Co., Ltd. Solar cell module
EP3522237A1 (en) * 2016-09-27 2019-08-07 Kaneka Corporation Solar cell module
TWM605302U (en) * 2020-09-25 2020-12-11 凌巨科技股份有限公司 Display apparatus with solar cell wirings
US10923539B2 (en) * 2018-09-07 2021-02-16 Samsung Display Co., Ltd. Electronic display apparatus including a solar cell unit
TWM623363U (en) * 2021-10-21 2022-02-11 凌巨科技股份有限公司 Solar cell

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4920105B2 (en) * 2010-01-22 2012-04-18 シャープ株式会社 Light transmissive solar cell module, method for manufacturing the same, and moving body equipped with the light transmissive solar cell module
US20130263909A1 (en) * 2011-08-30 2013-10-10 Sanyo Electric Co., Ltd. Solar cell module
CN103123923A (en) * 2013-01-31 2013-05-29 中国科学院苏州纳米技术与纳米仿生研究所 Laser photovoltaic cell and manufacturing method thereof
EP3522237A1 (en) * 2016-09-27 2019-08-07 Kaneka Corporation Solar cell module
US10923539B2 (en) * 2018-09-07 2021-02-16 Samsung Display Co., Ltd. Electronic display apparatus including a solar cell unit
TWM605302U (en) * 2020-09-25 2020-12-11 凌巨科技股份有限公司 Display apparatus with solar cell wirings
TWM623363U (en) * 2021-10-21 2022-02-11 凌巨科技股份有限公司 Solar cell

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