TWM624842U - Semi transmissive solar cell - Google Patents

Semi transmissive solar cell Download PDF

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TWM624842U
TWM624842U TW110213793U TW110213793U TWM624842U TW M624842 U TWM624842 U TW M624842U TW 110213793 U TW110213793 U TW 110213793U TW 110213793 U TW110213793 U TW 110213793U TW M624842 U TWM624842 U TW M624842U
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Taiwan
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photoelectric conversion
solar cell
electrode
light
transflective
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TW110213793U
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Chinese (zh)
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陳建琦
周凱茹
吳哲耀
曾振洋
蔡秉均
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凌巨科技股份有限公司
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Abstract

A semi transmissive solar cell has a plurality of light transmission areas and includes a substrate, a plurality of photoelectric conversion devices, a plurality of first insulation patterns, a plurality of conductive patterns and a plurality of second insulation patterns. The photoelectric conversion patterns are disposed between the light transmission areas and individually includes a photoelectric conversion layer, a first electrode and a second electrode. The first electrode and the second electrode are disposed on two opposite sides of the photoelectric conversion layer and electrically connect the photoelectric conversion layer. The first insulation patterns respectively cover the photoelectric conversion devices. The conductive patterns are respectively arranged corresponding to the photoelectric conversion devices, and do not overlap the light transmission areas. The second insulation patterns are disposed on the first insulation patterns, and respectively cover the conductive patterns. The second insulation patterns are located between the light transmission areas, and do not overlap the light transmission areas.

Description

半穿透式太陽能電池Transflective solar cells

本新型創作是有關於一種太陽能電池,且特別是有關於一種半穿透式太陽能電池。This novel creation is about a solar cell, and in particular a semi-transmissive solar cell.

伴隨著顯示技術的蓬勃發展,顯示器的應用也日趨廣泛。除了高規格的顯示品質外,追求省電、環保等永續發展理念的顯示器也是相關廠商的開發重點之一。由於太陽能電池為環保綠能的指標技術,因此將太陽能發電技術應用在穿戴式顯示裝置上以提升其操作續航力的需求逐漸增加。為了避免顯示面板因薄膜太陽能板的疊置而造成的顯示品質下降,薄膜太陽能板在顯示面板的顯示區須具備一定的穿透度與光電轉換面積,方能同時達到顯示以及太陽能發電的效果。With the vigorous development of display technology, the application of displays is also becoming more and more extensive. In addition to high-standard display quality, displays that pursue sustainable development concepts such as power saving and environmental protection are also one of the development priorities of related manufacturers. Since solar cells are an indicator technology for environmental protection and green energy, the demand for applying solar power generation technology to wearable display devices to improve their operating endurance is gradually increasing. In order to avoid the display quality degradation caused by the stacking of thin-film solar panels, the thin-film solar panels must have a certain degree of transmittance and photoelectric conversion area in the display area of the display panel in order to achieve both display and solar power generation effects.

這類的薄膜太陽能板在顯示區內大都設有週期性排列的多條太陽能電池走線。由於太陽能電池走線朝向收光面一側的電極必須為光穿透式電極,其阻值相較於一般的金屬電極來得高。因此,一種設置輔助導電層來降低光穿透式電極阻值的方法被提出。其中,為了保護輔助導電層,太陽能電池走線上還需設有一絕緣層來包覆此輔助導電層,且此絕緣層是以整面性填平的方式進行覆蓋。因此,光線(例如環境光線或來自顯示面板的光線)在通過此絕緣層後容易產生色偏的現象,而影響視覺品質。Such thin-film solar panels are mostly provided with a plurality of solar cell lines arranged periodically in the display area. Since the electrode on the side of the solar cell trace facing the light-receiving surface must be a light-transmitting electrode, its resistance value is higher than that of a general metal electrode. Therefore, a method of providing an auxiliary conductive layer to reduce the resistance of the light-transmitting electrode is proposed. Wherein, in order to protect the auxiliary conductive layer, an insulating layer needs to be provided on the wiring of the solar cell to cover the auxiliary conductive layer, and the insulating layer is covered by filling the whole surface. Therefore, light (such as ambient light or light from a display panel) is prone to color shift after passing through the insulating layer, which affects the visual quality.

本新型創作提供一種半穿透式太陽能電池,能有效抑制透射光的色偏現象。The novel creation provides a semi-transmissive solar cell, which can effectively suppress the color shift phenomenon of transmitted light.

本新型創作的半穿透式太陽能電池,具有多個透光區,並且包括基板、多個光電轉換元件、多個第一絕緣圖案、多個導電圖案以及多個第二絕緣圖案。這些光電轉換元件設置在基板上,且位於這些透光區之間。光電轉換元件包括光電轉換層、第一電極和第二電極。第一電極和第二電極設置在光電轉換層的相對兩側,並且電性連接光電轉換層。第一電極位在基板與光電轉換層之間。這些第一絕緣圖案分別覆蓋這些光電轉換元件。這些導電圖案分別對應這些光電轉換元件設置,且不重疊於這些透光區。這些第二絕緣圖案設置在這些第一絕緣圖案上,且分別包覆這些導電圖案。這些第二絕緣圖案位於這些透光區之間,且不重疊於這些透光區。The newly created semi-transmissive solar cell has a plurality of light-transmitting regions, and includes a substrate, a plurality of photoelectric conversion elements, a plurality of first insulating patterns, a plurality of conductive patterns, and a plurality of second insulating patterns. The photoelectric conversion elements are disposed on the substrate and located between the light-transmitting regions. The photoelectric conversion element includes a photoelectric conversion layer, a first electrode, and a second electrode. The first electrode and the second electrode are disposed on opposite sides of the photoelectric conversion layer, and are electrically connected to the photoelectric conversion layer. The first electrode is located between the substrate and the photoelectric conversion layer. The first insulating patterns cover the photoelectric conversion elements, respectively. The conductive patterns are respectively disposed corresponding to the photoelectric conversion elements, and do not overlap the light-transmitting regions. The second insulating patterns are disposed on the first insulating patterns and cover the conductive patterns respectively. The second insulating patterns are located between the light-transmitting regions and do not overlap the light-transmitting regions.

在本新型創作的一實施例中,上述的半穿透式太陽能電池的各個導電圖案沿著平行於基板的一方向的寬度小於或等於第二電極沿著該方向的寬度。In an embodiment of the present invention, the width of each conductive pattern of the above-mentioned transflective solar cell along a direction parallel to the substrate is less than or equal to the width of the second electrode along the direction.

在本新型創作的一實施例中,上述的半穿透式太陽能電池的各個第二絕緣圖案沿著平行於基板的一方向的寬度大於各個導電圖案沿著該方向的寬度。In an embodiment of the present invention, the width of each of the second insulating patterns of the transflective solar cell along a direction parallel to the substrate is greater than the width of each of the conductive patterns along the direction.

在本新型創作的一實施例中,上述的半穿透式太陽能電池的多個第一絕緣圖案部分重疊於多個透光區,並且包覆多個光電轉換元件。In an embodiment of the present invention, the plurality of first insulating patterns of the transflective solar cell are partially overlapped with the plurality of light-transmitting regions, and cover the plurality of photoelectric conversion elements.

在本新型創作的一實施例中,上述的半穿透式太陽能電池的多個第二絕緣圖案在基板上的正投影完全位在多個光電轉換元件的多個第二電極在基板上的正投影內。In an embodiment of the present invention, the orthographic projections of the second insulating patterns of the transflective solar cells on the substrate are completely located on the positive surfaces of the second electrodes of the photoelectric conversion elements on the substrate. within the projection.

在本新型創作的一實施例中,上述的半穿透式太陽能電池的相重疊的第二絕緣圖案和第二電極分別具有第一邊緣和第二邊緣,且第一邊緣在第二電極上的正投影與第二邊緣之間的最短距離大於0微米。In an embodiment of the present invention, the overlapping second insulating pattern and the second electrode of the semi-transmissive solar cell respectively have a first edge and a second edge, and the first edge is on the second electrode. The shortest distance between the orthographic projection and the second edge is greater than 0 microns.

在本新型創作的一實施例中,上述的半穿透式太陽能電池的多個光電轉換元件的多個第二電極定義出多個透光區。In an embodiment of the present invention, the plurality of second electrodes of the plurality of photoelectric conversion elements of the above-mentioned transflective solar cell define a plurality of light-transmitting regions.

在本新型創作的一實施例中,上述的半穿透式太陽能電池的各個光電轉換元件的第一電極電性連接多個導電圖案的其中一者。In an embodiment of the present invention, the first electrode of each photoelectric conversion element of the transflective solar cell is electrically connected to one of the plurality of conductive patterns.

在本新型創作的一實施例中,上述的半穿透式太陽能電池的多個第二絕緣圖案背離多個光電轉換元件的一側設有顯示面板,以構成顯示裝置。In an embodiment of the present invention, a display panel is provided on the side of the plurality of second insulating patterns of the above-mentioned transflective solar cell away from the plurality of photoelectric conversion elements, so as to constitute a display device.

基於上述,在本新型創作的一實施例的半穿透式太陽能電池中,光電轉換元件被第一絕緣圖案所覆蓋。第一絕緣圖案上設有導電圖案,且此導電圖案可提升光電轉換元件的操作電性。為了保護導電圖案,其表面覆蓋有第二絕緣圖案。透過此第二絕緣圖案不重疊於透光區的設計,可有效解決光線通過半穿透式太陽能電池後的色偏問題(例如黃化現象),進而取得較佳的視覺效果。Based on the above, in the transflective solar cell of an embodiment of the present invention, the photoelectric conversion element is covered by the first insulating pattern. The first insulating pattern is provided with a conductive pattern, and the conductive pattern can improve the electrical performance of the photoelectric conversion element. In order to protect the conductive pattern, its surface is covered with a second insulating pattern. Through the design that the second insulating pattern does not overlap the light-transmitting area, the color shift problem (eg, yellowing phenomenon) after the light passes through the transflective solar cell can be effectively solved, thereby achieving a better visual effect.

有關本新型創作之前述及其他技術內容、特點與功效,在以下配合參考圖式之一較佳實施例的詳細說明中,將可清楚的呈現。以下實施例中所提到的方向用語,例如:上、下、左、右、前或後等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明並非用來限制本新型創作。The aforementioned and other technical contents, features and effects of the novel creation will be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. The directional terms mentioned in the following embodiments, such as: up, down, left, right, front or rear, etc., are only for referring to the directions of the attached drawings. Therefore, the directional language used is for illustration and not for limitation of the present invention.

圖1是本新型創作的一實施例的半穿透式太陽能電池的剖視示意圖。圖2是本新型創作的一實施例的顯示裝置的剖視示意圖。請參照圖1,半穿透式太陽能電池10包括基板100、多個光電轉換元件110和多個第一絕緣圖案130。基板100的材質包括玻璃、石英、高分子材料(例如聚醯亞胺、聚碳酸酯)、或其他合適的基板材料。這些光電轉換元件110設置在基板100上,且彼此間隔開來。在本實施例中,光電轉換元件110例如是太陽能電池走線,但不以此為限。FIG. 1 is a schematic cross-sectional view of a transflective solar cell according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. Referring to FIG. 1 , the transflective solar cell 10 includes a substrate 100 , a plurality of photoelectric conversion elements 110 and a plurality of first insulating patterns 130 . The material of the substrate 100 includes glass, quartz, polymer materials (eg, polyimide, polycarbonate), or other suitable substrate materials. These photoelectric conversion elements 110 are provided on the substrate 100 and are spaced apart from each other. In this embodiment, the photoelectric conversion element 110 is, for example, a solar cell wiring, but not limited thereto.

詳細而言,光電轉換元件110包括光電轉換層PCL、第一電極E1和第二電極E2。第一電極E1和第二電極E2設置在光電轉換層PCL的相對兩側,並且電性連接光電轉換層PCL。第一電極E1位在基板100與光電轉換層PCL之間。在本實施例中,第一電極E1沿著平行於基板100的方向(例如方向X)的寬度W1可大於第二電極E2(或光電轉換層PCL)沿著所述方向的寬度W2,以避免製程中發生底切(undercut)的現象而導致第一電極E1與第二電極E2的電性短路。第一電極E1和第二電極E2各自沿著方向Y的厚度可介於0.05微米至5微米之間。In detail, the photoelectric conversion element 110 includes a photoelectric conversion layer PCL, a first electrode E1 and a second electrode E2. The first electrode E1 and the second electrode E2 are disposed on opposite sides of the photoelectric conversion layer PCL, and are electrically connected to the photoelectric conversion layer PCL. The first electrode E1 is located between the substrate 100 and the photoelectric conversion layer PCL. In this embodiment, the width W1 of the first electrode E1 along a direction parallel to the substrate 100 (eg, the direction X) may be greater than the width W2 of the second electrode E2 (or the photoelectric conversion layer PCL) along the direction to avoid An undercut phenomenon occurs during the manufacturing process, resulting in an electrical short circuit between the first electrode E1 and the second electrode E2. The thickness of each of the first electrode E1 and the second electrode E2 along the direction Y may be between 0.05 micrometers and 5 micrometers.

特別注意的是,由於外部環境光線是由基板100背離光電轉換元件110的一側入射,因此第一電極E1與第二電極E2分別為透光電極與反射電極。透光電極的材質包括金屬氧化物,例如:銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、或其它合適的氧化物、或者是上述至少兩者之堆疊層。反射電極的材質包括鋁、銀、鉻、上述的合金、上述的組合、或其他具有高反射率的金屬材料。也因此,本實施例的多個第二電極E2可定義出半穿透式太陽能電池10的多個透光區TA,這些透光區TA適於讓可見光(例如:陽光或來自顯示面板的光線)通過。從另一觀點來說,多個光電轉換元件110是設置在這些透光區TA之間。It should be noted that, since the external ambient light is incident from the side of the substrate 100 away from the photoelectric conversion element 110 , the first electrode E1 and the second electrode E2 are light-transmitting electrodes and reflective electrodes, respectively. The material of the light-transmitting electrode includes metal oxides, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable oxides, or a stacked layer of at least two of the above. The material of the reflective electrode includes aluminum, silver, chromium, the above-mentioned alloys, the above-mentioned combinations, or other metal materials with high reflectivity. Therefore, the plurality of second electrodes E2 in this embodiment can define a plurality of light-transmitting areas TA of the transflective solar cell 10, and these light-transmitting areas TA are suitable for allowing visible light (eg, sunlight or light from the display panel) )pass. From another point of view, a plurality of photoelectric conversion elements 110 are disposed between the light-transmitting areas TA.

光電轉換層PCL的材質例如是非晶矽(amorphous silicon,a-Si),且其沿著方向Y的厚度可介於0.05微米至5微米之間,但不以此為限。在其他實施例中,光電轉換層PCL的材質也可以是單晶矽、多晶矽、銅銦鎵硒、銻化鎘、或上述的組合。詳細而言,光電轉換層PCL包括第一非本徵半導體層111、本徵半導體層112以及第二非本徵半導體層113。第一非本徵半導體層111具有第一摻雜類型,第二非本徵半導體層113具有第二摻雜類型,且第一摻雜類型與第二摻雜類型各自為P型與N型中的一者。舉例來說,在本實施例中,第一非本徵半導體層111可以是P型半導體層,而第二非本徵半導體層113可以是N型半導體層。The material of the photoelectric conversion layer PCL is, for example, amorphous silicon (a-Si), and its thickness along the direction Y can be between 0.05 μm and 5 μm, but not limited thereto. In other embodiments, the material of the photoelectric conversion layer PCL may also be monocrystalline silicon, polycrystalline silicon, copper indium gallium selenide, cadmium antimonide, or a combination thereof. In detail, the photoelectric conversion layer PCL includes a first extrinsic semiconductor layer 111 , an intrinsic semiconductor layer 112 and a second extrinsic semiconductor layer 113 . The first extrinsic semiconductor layer 111 has a first doping type, the second extrinsic semiconductor layer 113 has a second doping type, and the first doping type and the second doping type are respectively P-type and N-type. one of. For example, in this embodiment, the first extrinsic semiconductor layer 111 may be a P-type semiconductor layer, and the second extrinsic semiconductor layer 113 may be an N-type semiconductor layer.

進一步而言,多個光電轉換元件110上分別覆蓋有多個第一絕緣圖案130。這些第一絕緣圖案130彼此間隔開來,並且各自包覆對應的光電轉換元件110。也因此,第一絕緣圖案130會部分重疊於透光區TA。第一絕緣圖案130覆蓋第一電極E1的部分和第一電極E1分別具有朝向透光區TA的邊緣130e和邊緣E1e,且第一絕緣圖案130的邊緣130e與第一電極E1的邊緣E1e之間沿著方向X的距離d1可介於1微米至20微米之間。光電轉換層PCL中朝向透光區TA的邊緣PCLe與第一電極E1的邊緣E1e之間沿著方向X的距離d2可介於0微米至20微米之間。另一方面,第一絕緣圖案130沿著方向Y的厚度可介於0.25微米至25微米之間。Further, the plurality of photoelectric conversion elements 110 are respectively covered with a plurality of first insulating patterns 130 . These first insulating patterns 130 are spaced apart from each other, and each coat the corresponding photoelectric conversion element 110 . Therefore, the first insulating pattern 130 is partially overlapped with the light-transmitting area TA. The portion of the first insulating pattern 130 covering the first electrode E1 and the first electrode E1 have an edge 130e and an edge E1e facing the light-transmitting area TA, respectively, and between the edge 130e of the first insulating pattern 130 and the edge E1e of the first electrode E1 The distance d1 along the direction X may be between 1 micrometer and 20 micrometers. The distance d2 along the direction X between the edge PCLe of the photoelectric conversion layer PCL facing the light-transmitting area TA and the edge E1e of the first electrode E1 may be between 0 μm and 20 μm. On the other hand, the thickness of the first insulating pattern 130 along the direction Y may be between 0.25 μm and 25 μm.

第一絕緣圖案130的材質可以是無機材料(例如:氮化矽、二氧化矽或三氧化二鋁)、有機材料(例如:並五苯、二乙二醇二甲醚或聚醯亞胺)、或上述的組合、或其他合適的透光材料。舉例來說,當第一絕緣圖案130的材質為無機材料時,其可具有隔絕水氧的能力以及減少漏電的優點;當第一絕緣圖案130的材質為有機材料時,其可具有較小的寄生電容以及較佳的平坦度。The material of the first insulating pattern 130 may be an inorganic material (eg, silicon nitride, silicon dioxide or aluminum oxide), an organic material (eg, pentacene, diethylene glycol dimethyl ether or polyimide) , or a combination of the above, or other suitable light-transmitting materials. For example, when the material of the first insulating pattern 130 is an inorganic material, it can have the advantages of isolating water and oxygen and reducing leakage; when the material of the first insulating pattern 130 is an organic material, it can have a smaller Parasitic capacitance and better flatness.

為了提升光電轉換元件110的操作電性,半穿透式太陽能電池10還包括多個導電圖案150和多個第二絕緣圖案170。這些導電圖案150分別對應多個光電轉換元件110(或多個第一絕緣圖案130)設置,且不重疊於多個透光區TA。此處的重疊關係例如是指兩構件沿著方向Y的投影重疊。以下若未特別提及,則任兩構件的重疊關係都是以相同的方式來界定,便不再贅述。In order to improve the electrical performance of the photoelectric conversion element 110 , the transflective solar cell 10 further includes a plurality of conductive patterns 150 and a plurality of second insulating patterns 170 . The conductive patterns 150 are respectively disposed corresponding to the plurality of photoelectric conversion elements 110 (or the plurality of first insulating patterns 130 ), and do not overlap with the plurality of light-transmitting regions TA. The overlapping relationship here means, for example, that the projections of the two members along the direction Y overlap. If not specifically mentioned below, the overlapping relationship of any two components is defined in the same way, and will not be repeated here.

導電圖案150沿著方向Y的厚度可介於0.05微米至5微米之間。另一方面,導電圖案150沿著平行於基板100的一方向(例如方向X)的寬度W3可小於第二電極E2的寬度W2,但不以此為限。在其他未繪示的實施例中,導電圖案150的寬度W3也可等於第二電極E2的寬度W2。在本實施例中,第二電極E2和導電圖案150分別具有朝向透光區TA的邊緣E2e和邊緣150e,且第二電極E2的邊緣E2e與導電圖案150的邊緣150e之間沿著方向X的距離d3可介於0微米至20微米之間。The thickness of the conductive pattern 150 along the direction Y may be between 0.05 micrometers and 5 micrometers. On the other hand, the width W3 of the conductive pattern 150 along a direction parallel to the substrate 100 (eg, the direction X) may be smaller than the width W2 of the second electrode E2 , but not limited thereto. In other not-shown embodiments, the width W3 of the conductive pattern 150 may also be equal to the width W2 of the second electrode E2. In this embodiment, the second electrode E2 and the conductive pattern 150 have an edge E2e and an edge 150e facing the light-transmitting area TA, respectively, and the edge E2e of the second electrode E2 and the edge 150e of the conductive pattern 150 are separated along the direction X. The distance d3 may be between 0 micrometers and 20 micrometers.

舉例來說,這些導電圖案150可分別電性連接多個光電轉換元件110的多個第一電極E1,以降低這些第一電極E1的整體阻值,但不以此為限。為了保護這些導電圖案150,本揭露利用多個第二絕緣圖案170來包覆這些導電圖案150。亦即,這些第二絕緣圖案170分別是設置在多個第一絕緣圖案130上。在本實施例中,第二絕緣圖案170的材質為有機材料,例如:並五苯、二乙二醇二甲醚或聚醯亞胺。For example, the conductive patterns 150 can be respectively electrically connected to the first electrodes E1 of the photoelectric conversion elements 110 to reduce the overall resistance of the first electrodes E1, but not limited thereto. In order to protect the conductive patterns 150 , the present disclosure uses a plurality of second insulating patterns 170 to cover the conductive patterns 150 . That is, the second insulating patterns 170 are respectively disposed on the plurality of first insulating patterns 130 . In this embodiment, the material of the second insulating pattern 170 is an organic material, such as pentacene, diethylene glycol dimethyl ether or polyimide.

特別注意的是,這些第二絕緣圖案170位在多個透光區TA之間,且不重疊於這些透光區TA。第二絕緣圖案170沿著平行於基板100的一方向(例如方向X)的寬度W4大於導電圖案150的寬度W3。第二絕緣圖案170中朝向透光區TA的邊緣170e與導電圖案150的邊緣150e之間沿著方向X的距離d4可介於1微米至60微米之間。更具體地說,第二絕緣圖案170在基板100上的正投影完全位於對應的第二電極E2在基板100上的正投影內。在本實施例中,第二絕緣圖案170的邊緣170e大致上是切齊第二電極E2的邊緣E2e,但不以此為限。第二絕緣圖案170沿著方向Y的厚度可介於0.1微米至30微米之間。It is particularly noted that the second insulating patterns 170 are located between the plurality of light-transmitting areas TA, and do not overlap with the light-transmitting areas TA. The width W4 of the second insulating pattern 170 along a direction parallel to the substrate 100 (eg, the direction X) is greater than the width W3 of the conductive pattern 150 . The distance d4 along the direction X between the edge 170e of the second insulating pattern 170 facing the light-transmitting area TA and the edge 150e of the conductive pattern 150 may be between 1 μm and 60 μm. More specifically, the orthographic projection of the second insulating pattern 170 on the substrate 100 is completely within the orthographic projection of the corresponding second electrode E2 on the substrate 100 . In this embodiment, the edge 170e of the second insulating pattern 170 is substantially aligned with the edge E2e of the second electrode E2, but not limited thereto. The thickness of the second insulating pattern 170 along the direction Y may be between 0.1 μm and 30 μm.

請同時參照圖2,本實施例的半穿透式太陽能電池10適於搭載在顯示面板200的顯示側200ds,以構成一顯示裝置1。更具體地說,半穿透式太陽能電池10的第二絕緣圖案170背離光電轉換元件110的一側設有顯示面板200。顯示面板200例如是液晶顯示面板、或其他合適的非自發光型顯示面板。也因此,顯示裝置1還可選擇性地包括背光模組(未繪示)。然而,本新型創作不限於此,根據其他實施例,顯示面板200也可以是微型發光二極體(micro light emitting diode,micro-LED)面板、次毫米發光二極體(mini light emitting diode,mini-LED)面板、或其他合適的自發光型顯示面板。Please also refer to FIG. 2 , the transflective solar cell 10 of this embodiment is suitable to be mounted on the display side 200 ds of the display panel 200 to form a display device 1 . More specifically, the display panel 200 is provided on the side of the second insulating pattern 170 of the transflective solar cell 10 facing away from the photoelectric conversion element 110 . The display panel 200 is, for example, a liquid crystal display panel, or other suitable non-self-luminous display panels. Therefore, the display device 1 may also optionally include a backlight module (not shown). However, the present invention is not limited to this. According to other embodiments, the display panel 200 may also be a micro light emitting diode (micro-LED) panel, a sub-millimeter light emitting diode (mini light emitting diode, mini) -LED) panels, or other suitable self-illuminating display panels.

詳細而言,顯示面板200發出的影像光線IB可經由半穿透式太陽能電池10的透光區TA出射顯示裝置1,而光電轉換元件110是經由第一電極E1的一側接收來自外部的環境光線EB(例如陽光),並產生電能來提供顯示面板200操作時所需的電力。透過第二絕緣圖案170不重疊於透光區TA的設計,可讓影像光線IB在通過透光區TA後不會產生色偏現象(例如黃化現象),有助於提升顯示裝置1的視覺效果。In detail, the image light IB emitted by the display panel 200 can exit the display device 1 through the light-transmitting area TA of the transflective solar cell 10 , and the photoelectric conversion element 110 receives the external environment through one side of the first electrode E1 light EB (eg, sunlight), and generate electric power to provide electric power required for the operation of the display panel 200 . Through the design that the second insulating pattern 170 does not overlap the light-transmitting area TA, the image light IB will not have a color shift phenomenon (eg, yellowing phenomenon) after passing through the light-transmitting area TA, which is helpful to improve the vision of the display device 1 Effect.

然而,本新型創作並不侷限半穿透式太陽能電池10的應用範疇。舉例來說,在其他實施例中,半穿透式太陽能電池10也可應用在建築物的觀景窗上,其除了具有太陽能發電的功能外,對於色偏現象的抑制還能讓觀看窗外景色的觀賞者具有較佳的視覺體驗。However, the present invention is not limited to the application scope of the transflective solar cell 10 . For example, in other embodiments, the semi-transmissive solar cell 10 can also be applied to the viewing window of a building. In addition to the function of solar power generation, the suppression of the color shift phenomenon can also allow viewing of the scenery outside the window. viewers have a better visual experience.

以下將列舉另一些實施例以詳細說明本揭露,其中相同的構件將標示相同的符號,並且省略相同技術內容的說明,省略部分請參考前述實施例,以下不再贅述。Hereinafter, other embodiments will be listed to describe the present disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted.

圖3是本新型創作的另一實施例的半穿透式太陽能電池的剖視示意圖。圖4是本新型創作的又一實施例的半穿透式太陽能電池的剖視示意圖。請參照圖3,本實施例的半穿透式太陽能電池10A與圖1的半穿透式太陽能電池10的差異在於:第二絕緣圖案的寬度不同。在本實施例中,半穿透式太陽能電池10A的第二絕緣圖案170A的邊緣170Ae相較於第二電極E2的邊緣E2e遠離透光區TA。也就是說,第二絕緣圖案170A的邊緣170Ae在第二電極E2上的正投影與第二電極E2的邊緣E2e之間沿著平行於基板100的一方向(例如方向X)的距離d5大於0微米。據此,可進一步抑制以較大角度入射並且通過透光區TA的光線產生色偏的現象,進而提升半穿透式太陽能電池10A在較大視角範圍內的視覺品質。3 is a schematic cross-sectional view of a transflective solar cell according to another embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a transflective solar cell according to another embodiment of the present invention. Referring to FIG. 3 , the difference between the transflective solar cell 10A of the present embodiment and the transflective solar cell 10 of FIG. 1 is that the widths of the second insulating patterns are different. In this embodiment, the edge 170Ae of the second insulating pattern 170A of the transflective solar cell 10A is farther from the light-transmitting area TA than the edge E2e of the second electrode E2 . That is, the distance d5 between the orthographic projection of the edge 170Ae of the second insulating pattern 170A on the second electrode E2 and the edge E2e of the second electrode E2 along a direction parallel to the substrate 100 (eg, the direction X) is greater than 0 microns. Accordingly, the phenomenon of color shift of light incident at a larger angle and passing through the light-transmitting area TA can be further suppressed, thereby improving the visual quality of the transflective solar cell 10A in a larger viewing angle range.

然而,本新型創作不限於此。在其他實施例中,根據不同的產品需求,半穿透式太陽能電池10B的第二絕緣圖案170B也可部分重疊於透光區TA,如圖4所示。亦即,第二絕緣圖案170B可進一步覆蓋第一絕緣圖案130朝向透光區TA的部分側壁130w。特別一提的是,第二絕緣圖案170B的邊緣170Be可選擇性地切齊第一絕緣圖案130的邊緣130e。也就是說,第一絕緣圖案130和第二絕緣圖案170B的圖案化製程可共用同一個光罩來進行曝光,有助於降低生產成本。However, the novel creation is not limited to this. In other embodiments, according to different product requirements, the second insulating pattern 170B of the transflective solar cell 10B may also partially overlap the light-transmitting area TA, as shown in FIG. 4 . That is, the second insulating pattern 170B may further cover a portion of the sidewall 130w of the first insulating pattern 130 facing the light-transmitting area TA. In particular, the edge 170Be of the second insulating pattern 170B can be selectively aligned with the edge 130e of the first insulating pattern 130 . That is to say, the patterning process of the first insulating pattern 130 and the second insulating pattern 170B can share the same mask for exposure, which helps to reduce the production cost.

特別說明的是,圖3的半穿透式太陽能電池10A和圖4的半穿透式太陽能電池10B都可用於取代圖2中顯示裝置1的半穿透式太陽能電池10。It is particularly noted that both the transflective solar cell 10A of FIG. 3 and the transflective solar cell 10B of FIG. 4 can be used to replace the transflective solar cell 10 of the display device 1 in FIG. 2 .

綜上所述,在本新型創作的一實施例的半穿透式太陽能電池中,光電轉換元件被第一絕緣圖案所覆蓋。第一絕緣圖案上設有導電圖案,且此導電圖案可提升光電轉換元件的操作電性。為了保護導電圖案,其表面覆蓋有第二絕緣圖案。透過此第二絕緣圖案不重疊於透光區的設計,可有效解決光線通過半穿透式太陽能電池後的色偏問題(例如黃化現象),進而取得較佳的視覺效果。To sum up, in the transflective solar cell of an embodiment of the present invention, the photoelectric conversion element is covered by the first insulating pattern. The first insulating pattern is provided with a conductive pattern, and the conductive pattern can improve the electrical performance of the photoelectric conversion element. In order to protect the conductive pattern, its surface is covered with a second insulating pattern. Through the design that the second insulating pattern does not overlap the light-transmitting area, the color shift problem (eg, yellowing phenomenon) after the light passes through the transflective solar cell can be effectively solved, thereby achieving a better visual effect.

1:顯示裝置 10、10A、10B:半穿透式太陽能電池 100:基板 110:光電轉換元件 111:第一非本徵半導體層 112:本徵半導體層 113:第二非本徵半導體層 130:第一絕緣圖案 130e、150e、170e、170Ae、170Be、E1e、E2e、PCLe:邊緣 130w:側壁 150:導電圖案 170、170A、170B:第二絕緣圖案 200:顯示面板 200ds:顯示側 d1、d2、d3、d4、d5:距離 E1:第一電極 E2:第二電極 EB:環境光線 IB:影像光線 PCL:光電轉換層 TA:透光區 W1、W2、W3、W4:寬度 X、Y:方向 1: Display device 10, 10A, 10B: Semi-transmissive solar cells 100: Substrate 110: Photoelectric conversion elements 111: the first extrinsic semiconductor layer 112: Intrinsic semiconductor layer 113: the second extrinsic semiconductor layer 130: First insulating pattern 130e, 150e, 170e, 170Ae, 170Be, E1e, E2e, PCLe: Edge 130w: sidewall 150: Conductive Pattern 170, 170A, 170B: Second insulating pattern 200: Display panel 200ds: Display side d1, d2, d3, d4, d5: distance E1: The first electrode E2: Second electrode EB: ambient light IB: Image Light PCL: Photoelectric Conversion Layer TA: light transmission area W1, W2, W3, W4: Width X, Y: direction

圖1是本新型創作的一實施例的半穿透式太陽能電池的剖視示意圖。 圖2是本新型創作的一實施例的顯示裝置的剖視示意圖。 圖3是本新型創作的另一實施例的半穿透式太陽能電池的剖視示意圖。 圖4是本新型創作的又一實施例的半穿透式太陽能電池的剖視示意圖。 FIG. 1 is a schematic cross-sectional view of a transflective solar cell according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of a display device according to an embodiment of the present invention. 3 is a schematic cross-sectional view of a transflective solar cell according to another embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a transflective solar cell according to another embodiment of the present invention.

10:半穿透式太陽能電池 10: Semi-transmissive solar cells

100:基板 100: Substrate

110:光電轉換元件 110: Photoelectric conversion elements

111:第一非本徵半導體層 111: the first extrinsic semiconductor layer

112:本徵半導體層 112: Intrinsic semiconductor layer

113:第二非本徵半導體層 113: the second extrinsic semiconductor layer

130:第一絕緣圖案 130: First insulating pattern

130e、150e、170e、E1e、E2e、PCLe:邊緣 130e, 150e, 170e, E1e, E2e, PCLe: Edge

150:導電圖案 150: Conductive Pattern

170:第二絕緣圖案 170: Second insulating pattern

d1、d2、d3、d4:距離 d1, d2, d3, d4: distance

E1:第一電極 E1: The first electrode

E2:第二電極 E2: Second electrode

EB:環境光線 EB: ambient light

PCL:光電轉換層 PCL: Photoelectric Conversion Layer

TA:透光區 TA: light transmission area

W1、W2、W3、W4:寬度 W1, W2, W3, W4: Width

X、Y:方向 X, Y: direction

Claims (9)

一種半穿透式太陽能電池,具有多個透光區,且包括: 一基板; 多個光電轉換元件,設置在該基板上,且位於該些透光區之間,各該些光電轉換元件包括: 一光電轉換層;以及 一第一電極和一第二電極,設置在該光電轉換層的相對兩側,且電性連接該光電轉換層,其中該第一電極位在該基板與該光電轉換層之間; 多個第一絕緣圖案,分別覆蓋該些光電轉換元件; 多個導電圖案,分別對應該些光電轉換元件設置,且不重疊於該些透光區;以及 多個第二絕緣圖案,設置在該些第一絕緣圖案上,且分別包覆該些導電圖案,該些第二絕緣圖案位於該些透光區之間,且不重疊於該些透光區。 A semi-transmissive solar cell has a plurality of light-transmitting regions, and includes: a substrate; A plurality of photoelectric conversion elements are disposed on the substrate and located between the light-transmitting regions, and each of the photoelectric conversion elements includes: a photoelectric conversion layer; and A first electrode and a second electrode are disposed on opposite sides of the photoelectric conversion layer and are electrically connected to the photoelectric conversion layer, wherein the first electrode is located between the substrate and the photoelectric conversion layer; a plurality of first insulating patterns respectively covering the photoelectric conversion elements; a plurality of conductive patterns, respectively disposed corresponding to the photoelectric conversion elements and not overlapping the light-transmitting regions; and A plurality of second insulating patterns are disposed on the first insulating patterns and cover the conductive patterns respectively, the second insulating patterns are located between the light-transmitting regions and do not overlap the light-transmitting regions . 如請求項1所述的半穿透式太陽能電池,其中各該些導電圖案沿著平行於該基板的一方向的一寬度小於或等於該第二電極沿著該方向的一寬度。The transflective solar cell of claim 1, wherein a width of each of the conductive patterns along a direction parallel to the substrate is less than or equal to a width of the second electrode along the direction. 如請求項1所述的半穿透式太陽能電池,其中各該些第二絕緣圖案沿著平行於該基板的一方向的一寬度大於各該些導電圖案沿著該方向的一寬度。The transflective solar cell of claim 1, wherein a width of each of the second insulating patterns along a direction parallel to the substrate is greater than a width of each of the conductive patterns along the direction. 如請求項1所述的半穿透式太陽能電池,其中該些第一絕緣圖案部分重疊於該些透光區,並且包覆該些光電轉換元件。The transflective solar cell of claim 1, wherein the first insulating patterns partially overlap the light-transmitting regions and cover the photoelectric conversion elements. 如請求項1所述的半穿透式太陽能電池,其中該些第二絕緣圖案在該基板上的正投影完全位在該些光電轉換元件的多個該第二電極在該基板上的正投影內。The transflective solar cell according to claim 1, wherein the orthographic projections of the second insulating patterns on the substrate are completely located on the orthographic projections of the second electrodes of the photoelectric conversion elements on the substrate Inside. 如請求項5所述的半穿透式太陽能電池,其中相重疊的一該第二絕緣圖案和一該第二電極分別具有一第一邊緣和一第二邊緣,且該第一邊緣在該第二電極上的正投影與該第二邊緣之間的最短距離大於0微米。The transflective solar cell of claim 5, wherein the overlapping one of the second insulating pattern and one of the second electrodes have a first edge and a second edge, respectively, and the first edge is on the first edge. The shortest distance between the orthographic projections on the two electrodes and the second edge is greater than 0 microns. 如請求項1所述的半穿透式太陽能電池,其中該些光電轉換元件的多個該第二電極定義出該些透光區。The transflective solar cell of claim 1, wherein the second electrodes of the photoelectric conversion elements define the light-transmitting regions. 如請求項1所述的半穿透式太陽能電池,其中各該些光電轉換元件的該第一電極電性連接該些導電圖案的其中一者。The transflective solar cell of claim 1, wherein the first electrode of each of the photoelectric conversion elements is electrically connected to one of the conductive patterns. 如請求項1所述的半穿透式太陽能電池,其中該些第二絕緣圖案背離該些光電轉換元件的一側設有一顯示面板,以構成一顯示裝置。The transflective solar cell according to claim 1, wherein a display panel is provided on the side of the second insulating patterns away from the photoelectric conversion elements to constitute a display device.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI798951B (en) * 2021-11-22 2023-04-11 凌巨科技股份有限公司 Semi transmissive solar cell
TWI814442B (en) * 2022-06-13 2023-09-01 凌巨科技股份有限公司 Manufacturing method of display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI798951B (en) * 2021-11-22 2023-04-11 凌巨科技股份有限公司 Semi transmissive solar cell
TWI814442B (en) * 2022-06-13 2023-09-01 凌巨科技股份有限公司 Manufacturing method of display device

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