TWI796562B - Sputtering target and method for manufacturing sputtering target - Google Patents

Sputtering target and method for manufacturing sputtering target Download PDF

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TWI796562B
TWI796562B TW109114968A TW109114968A TWI796562B TW I796562 B TWI796562 B TW I796562B TW 109114968 A TW109114968 A TW 109114968A TW 109114968 A TW109114968 A TW 109114968A TW I796562 B TWI796562 B TW I796562B
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target
aforementioned
shielding member
peripheral surface
bonding material
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TW202102701A (en
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和田優
齋藤勝仁
川越裕
武末健太郎
高橋一寿
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日商愛發科股份有限公司
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
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Abstract

Subject of this invention is to suppress peeling of shielding member. In a sputtering target according to this invention, a target body has a plurality of cylindrical target members that surround outer circumference surface of a cylindrical backing tube, each of the plurality of target members is disposed to be separated from each other in central axis direction of the backing tube, and the plurality of target members are disposed side by side in the central axis direction so that a clearance formed between adjacent target members orbits around the central axis of the backing tube, and a recess connecting with the clearance is formed on the backing tube side. A joining material is disposed between the backing tube and the target body, and joins the backing tube and each of the plurality of target members. A shielding member is disposed between the joining material and the target body, is housed in the recess, and shields the clearance from the joining material side.

Description

濺鍍靶以及濺鍍靶的製造方法Sputtering target and manufacturing method of sputtering target

本發明係關於一種濺鍍靶(sputtering target)以及濺鍍靶的製造方法。The invention relates to a sputtering target and a manufacturing method of the sputtering target.

伴隨著薄型電視的大畫面化,在製造平板顯示器(flat panel display)時所使用的濺鍍靶正進行著大型化。伴隨於此,出現了大面積的氧化物靶。特別是,正對安裝有長且圓筒型之氧化物靶的成膜裝置進行開發。為了得到長的圓筒型之氧化物靶,提供有用接合材將複數個圓筒型的氧化物燒結體(sintered oxide)與圓筒型的底管(backing tube)予以接合的方法。Along with the enlargement of the screen of a thin TV, the size of the sputtering target used at the time of manufacture of a flat panel display (flat panel display) is advancing. Accompanied by this, a large-area oxide target has emerged. In particular, a film-forming device equipped with a long cylindrical oxide target is being developed. In order to obtain a long cylindrical oxide target, a method of joining a plurality of cylindrical oxide sintered bodies (sintered oxide) and a cylindrical backing tube with a bonding material is provided.

但是,在以複數個靶構件構成濺鍍靶的情形下,相鄰的靶構件彼此因靶構件的熱膨脹而接觸,有靶構件會破裂的情形。為了防止因該接觸所造成的破裂,有在相鄰的靶構件之間設有空隙之情形(例如參照專利文獻1)。However, when the sputtering target is constituted by a plurality of target members, adjacent target members may come into contact with each other due to thermal expansion of the target members, and the target members may be broken. In order to prevent breakage due to this contact, a gap may be provided between adjacent target members (for example, refer to Patent Document 1).

但是,若設有空隙,則接合材會侵入空隙、底管於空隙處露出等,而有靶材以外的成分會附著於空隙的可能性。若引起此種現象,則靶材以外的成分會混入至被覆膜,被覆膜的特性會惡化。又,也會成為在成膜步驟中的異常放電之主要因素。However, if a void is provided, the bonding material may penetrate into the void, and the bottom tube may be exposed in the void, and components other than the target material may adhere to the void. If such a phenomenon occurs, components other than the target material will be mixed into the coating film, and the properties of the coating film will deteriorate. Also, it becomes a factor of abnormal discharge in the film forming step.

為了對應處理此種問題,例如在平面(planar)型的分割型濺鍍靶中係採取有以下對策:從底板(backing plate)側將遮蔽構件張貼於鄰接的靶構件之間的空隙,防止接合材往空隙侵入、底板往空隙露出(例如參照專利文獻2)。 [先前技術文獻] [專利文獻]In order to cope with this problem, for example, the following countermeasures are taken in planar split sputtering targets: a shielding member is attached to the gap between adjacent target members from the backing plate side to prevent bonding. The material penetrates into the gap, and the bottom plate is exposed to the gap (for example, refer to Patent Document 2). [Prior Art Literature] [Patent Document]

[專利文獻1]日本特開2015-168832號公報。 [專利文獻2]日本專利第4961514號公報。[Patent Document 1] Japanese Patent Laid-Open No. 2015-168832. [Patent Document 2] Japanese Patent No. 4961514.

[發明所欲解決之課題][Problem to be Solved by the Invention]

然而,在平面型的濺鍍靶中,一般的接合手法是在使靶構件與底板隔著接合材而對向後使彼此互貼以進行接合,但相對於此,在圓筒型的濺鍍靶中有採取以下對策的情形:將接合材注入於靶構件與底管之間而將靶構件與底管予以接合。因此,在製造圓筒型的濺鍍靶時,在接合材注入時如何抑制遮蔽構件的剝離變得重要。However, in the planar sputtering target, the general bonding method is to make the target member and the bottom plate face each other through the bonding material and then stick each other to bond. However, in the cylindrical sputtering target There are cases in which a joint material is injected between the target member and the bottom pipe to join the target member and the bottom pipe. Therefore, when manufacturing a cylindrical sputtering target, it becomes important how to suppress peeling of a shielding member at the time of injection|pouring of a bonding material.

有鑑於以上般的狀況,本發明之目的係在於提供一種遮蔽構件的剝離被抑制了的濺鍍靶以及濺鍍靶的製造方法。 [用以解決課題之手段]In view of the above-mentioned situation, the object of this invention is to provide the manufacturing method of the sputtering target and the sputtering target which suppressed peeling of a shielding member. [Means to solve the problem]

為了達成上述目的,本發明的一形態之濺鍍靶係具備筒狀的底管、靶本體、接合材及遮蔽構件。 上述靶本體係具有將上述底管之外周面予以包圍的複數個圓筒狀的靶構件,上述複數個靶構件係分別以在上述底管之中心軸方向隔開的方式並排設置,藉由上述複數個靶構件在上述中心軸方向並排,在相鄰的靶構件之間形成的間隙係環繞上述底管的中心軸周圍,且與上述間隙連通的凹部係形成於上述底管那側。 上述接合材係被設置於上述底管與上述靶本體之間,將上述底管與上述複數個靶構件的各個予以接合。 上述遮蔽構件係被配置於上述接合材與上述靶本體之間,被收容於上述凹部,且從上述接合材那側將上述間隙予以遮蔽。In order to achieve the said object, the sputtering target of one aspect of this invention is provided with the cylindrical bottom pipe, a target main body, a bonding material, and a shielding member. The above-mentioned target system has a plurality of cylindrical target members which surround the outer peripheral surface of the bottom pipe. A plurality of target members are arranged side by side in the direction of the central axis, gaps formed between adjacent target members surround the circumference of the central axis of the bottom pipe, and recesses communicating with the gaps are formed on the bottom pipe side. The bonding material is provided between the bottom pipe and the target body, and joins the bottom pipe and each of the plurality of target members. The shielding member is arranged between the bonding material and the target body, is housed in the concave portion, and shields the gap from the bonding material side.

根據此種濺鍍靶,由於遮蔽構件被收容於凹部,故遮蔽構件的剝離得以抑制。According to such a sputtering target, since a shielding member is accommodated in a recessed part, peeling of a shielding member is suppressed.

在上述濺鍍靶中,也可以是上述相鄰的靶構件係由第一靶構件與第二靶構件所構成;上述第一靶構件係具有與上述第二靶構件對向的第一端面;上述第二靶構件係具有與上述第一靶構件對向的第二端面;上述第一靶構件係具有:第一內周面,係與上述底管隔著第一距離而與上述接合材對向;以及第二內周面,係與上述第一端面連接設置,且與上述底管隔著比上述第一距離還長的第二距離而與上述遮蔽構件對向;上述第一靶構件係藉由上述第一內周面與上述第二內周面而形成有階差;上述第二靶構件係具有:第三內周面,係與上述底管隔著上述第一距離而與上述接合材對向;以及第四內周面,係與上述第二端面連接設置,且與上述底管隔著上述第二距離而與上述遮蔽構件對向;上述第二靶構件係藉由上述第三內周面與上述第四內周面而形成有階差;上述第二內周面與上述第四內周面係隔著上述間隙而在上述中心軸方向並排,藉此於上述靶本體形成有上述凹部。In the above-mentioned sputtering target, it is also possible that the above-mentioned adjacent target member is composed of a first target member and a second target member; the first target member has a first end surface opposite to the second target member; The second target member has a second end surface opposite to the first target member; the first target member has a first inner peripheral surface opposite to the bonding material with a first distance from the bottom tube. and the second inner peripheral surface is connected to the above-mentioned first end surface, and is separated from the above-mentioned bottom pipe by a second distance longer than the above-mentioned first distance and opposite to the above-mentioned shielding member; the above-mentioned first target member is A step difference is formed by the first inner peripheral surface and the second inner peripheral surface; the second target member has a third inner peripheral surface that is bonded to the bottom pipe with the first distance between them. and the fourth inner peripheral surface is connected to the above-mentioned second end surface, and is opposite to the above-mentioned shielding member with the above-mentioned second distance from the above-mentioned bottom pipe; the above-mentioned second target member The inner peripheral surface and the fourth inner peripheral surface form a step difference; the second inner peripheral surface and the fourth inner peripheral surface are arranged side by side in the direction of the central axis through the gap, whereby a gap is formed on the target body. the aforementioned recess.

根據此種濺鍍靶,由於遮蔽構件被收容於在相鄰的靶構件所形成的凹部,故遮蔽構件的剝離得以抑制。According to such a sputtering target, since a shielding member is accommodated in the recessed part formed in the adjacent target member, peeling of a shielding member is suppressed.

在上述濺鍍靶中,上述遮蔽構件與上述底管之間的距離也可以比上述第一距離還長。In the said sputtering target, the distance between the said shielding member and the said bottom pipe may be longer than the said 1st distance.

根據此種濺鍍靶,由於以遮蔽構件與底管之間的距離變得比第一距離還長的方式將遮蔽構件收容於凹部,故遮蔽構件的剝離得以抑制。According to such a sputtering target, since the shielding member is housed in the recess so that the distance between the shielding member and the bottom pipe becomes longer than the first distance, peeling of the shielding member is suppressed.

在上述濺鍍靶中,上述靶本體也可以在上述底管的上述中心軸方向成為行狀而並排設置複數個。In the above-mentioned sputtering target, the above-mentioned target main bodies may be arranged in a row in the direction of the above-mentioned central axis of the above-mentioned bottom pipe, and a plurality of pieces may be arranged side by side.

根據此種濺鍍靶,能夠簡便地得到長條的濺鍍靶。According to such a sputtering target, a long sputtering target can be obtained easily.

在上述濺鍍靶中,上述複數個靶構件也可以分別藉由氧化物的燒結體所構成。In the above-mentioned sputtering target, each of the plurality of target members may be constituted by a sintered body of an oxide.

根據此種濺鍍靶,即使複數個靶構件係分別藉由氧化物的燒結體所構成,接合材對間隙的侵入也會被抑制。According to such a sputtering target, even if each of the plurality of target members is constituted by the sintered body of oxide, the intrusion of the bonding material into the gap is suppressed.

在上述濺鍍靶中,上述氧化物也可以具有In、Ga及Zn。In the said sputtering target, the said oxide may have In, Ga, and Zn.

根據此種濺鍍靶,由於燒結體具有In、Ga及Zn,故形成有穩定的氧化物半導體膜。According to such a sputtering target, since the sintered body contains In, Ga, and Zn, a stable oxide semiconductor film is formed.

為了達成上述目的,在本發明的一形態之濺鍍靶的製造方法中,將筒狀的第一靶構件與筒狀的第二靶構件以在各自的中心軸方向隔開的方式並排。 將藉由並排上述第一靶構件及上述第二靶構件所形成的間隙予以形成,並且將與上述間隙連通的凹部形成在上述第一靶構件及上述第二靶構件各自的內部。 將遮蔽構件於收容上述凹部,且藉由上述遮蔽構件將上述間隙從上述第一靶構件及上述第二靶構件各自的內側遮蔽。 用上述第一靶構件及上述第二靶構件包圍上述底管的外周面;在將已熔融的上述接合材填充於上述第一靶構件與上述底管之間後,將已熔融的上述接合材通過上述遮蔽構件與上述底管之間而填充於上述第二靶構件與上述底管之間;將上述接合材固化,藉此將上述第一靶構件與上述底管之間及上述第二靶構件與上述底管之間予以接合,且將具有上述第一靶構件與上述第二靶構件的上述靶本體形成在上述底管之周圍。In order to achieve the said objective, in the manufacturing method of the sputtering target which concerns on one aspect of this invention, a cylindrical 1st target member and a cylindrical 2nd target member are arrange|positioned so that it may space|interval in each center axis direction. A gap formed by juxtaposing the first target member and the second target member is formed, and a recess communicating with the gap is formed inside each of the first target member and the second target member. A shielding member is accommodated in the concave portion, and the gap is shielded from insides of the first target member and the second target member by the shielding member. The outer peripheral surface of the bottom pipe is surrounded by the first target member and the second target member; after the molten bonding material is filled between the first target member and the bottom pipe, the molten bonding material Between the above-mentioned shielding member and the above-mentioned bottom pipe, it is filled between the above-mentioned second target member and the above-mentioned bottom pipe; The member is joined to the bottom pipe, and the target body having the first target member and the second target member is formed around the bottom pipe.

根據此種濺鍍靶的製造方法,由於遮蔽構件被收容於在相鄰的靶構件所形成的凹部,故遮蔽構件的剝離得以抑制。 [發明功效]According to the manufacturing method of such a sputtering target, since a shielding member is accommodated in the recessed part formed in the adjacent target member, peeling of a shielding member is suppressed. [Efficacy of the invention]

如以上所述,根據本發明提供有一種遮蔽構件的剝離被抑制了的濺鍍靶以及濺鍍靶的製造方法。As described above, according to the present invention, there are provided a sputtering target in which peeling of a shielding member is suppressed, and a method for manufacturing a sputtering target.

以下,一邊參照圖式一邊說明本發明的實施形態。有在各圖式中導入XYZ軸座標的情形。又,有對相同構件或者是具有相同功能之構件附加相同符號的情形,且有在說明該構件後適當省略說明之情形。Hereinafter, embodiments of the present invention will be described with reference to the drawings. There are cases where XYZ axis coordinates are imported into each drawing. In addition, the same reference numerals may be attached to the same members or members having the same functions, and descriptions may be appropriately omitted after describing the members.

圖1中的(a)是表示本實施形態之濺鍍靶的示意性立體圖。圖1中的(b)是表示本實施形態之濺鍍靶的示意性剖視圖。於圖1中的(b)係表示有沿著圖1中的(a)裡之A1-A2線的X-Y軸剖面。(a) in FIG. 1 is a schematic perspective view which shows the sputtering target of this embodiment. (b) in FIG. 1 is a schematic cross-sectional view which shows the sputtering target of this embodiment. (b) in FIG. 1 shows the X-Y axis section along the A1-A2 line in (a) in FIG. 1 .

於圖1中的(a)、(b)所示的濺鍍靶1是用於濺鍍成膜之圓筒狀的靶組件(target assembly)。濺鍍靶1係具備:底管10、靶本體20、接合材30及遮蔽構件40。The sputtering target 1 shown in (a) and (b) of FIG. 1 is a cylindrical target assembly (target assembly) for sputtering film formation. The sputtering target 1 includes a bottom tube 10 , a target body 20 , a bonding material 30 , and a shielding member 40 .

底管10是筒狀體,且底管10的內部為中空狀。底管10係在一軸方向(例如中心軸10c的方向)延伸。中心軸10c的方向是底管10的長邊方向。又,底管10是濺鍍靶1的基材,據此中心軸10c也是濺鍍靶1的中心軸。The bottom pipe 10 is a cylindrical body, and the inside of the bottom pipe 10 is hollow. The bottom pipe 10 extends in one axial direction (for example, the direction of the central axis 10c). The direction of the central axis 10c is the longitudinal direction of the bottom pipe 10 . Moreover, the bottom tube 10 is the base material of the sputtering target 1, and the central axis 10c is also the central axis of the sputtering target 1 accordingly.

底管10係具有:外周面101,係環繞中心軸10c的周圍;以及內周面102,係位於外周面101的相反側,且環繞中心軸10c的周圍。在與中心軸10c正交的平面(例如X-Y軸平面)將底管10切斷之情形下,底管10的形狀成為例如環狀。The bottom pipe 10 has: an outer peripheral surface 101 surrounding the central axis 10c; and an inner peripheral surface 102 located on the opposite side of the outer peripheral surface 101 and surrounding the central axis 10c. When the bottom pipe 10 is cut on a plane (for example, an X-Y axis plane) perpendicular to the central axis 10c, the shape of the bottom pipe 10 becomes, for example, a ring shape.

底管10的材料係具有於導熱性優異的材料,例如鈦(Ti)、銅(Cu)等。於底管10的內部可以適當形成有供冷媒流通的流路。The material of the bottom pipe 10 is a material with excellent thermal conductivity, such as titanium (Ti), copper (Cu) and the like. A flow path through which the refrigerant circulates may be appropriately formed inside the bottom pipe 10 .

靶本體20係包圍底管10的外周面101。靶本體20係對著底管10被配置成同心狀。靶本體20係具有複數個靶構件。例如,在圖1中的(a)、(b)之例中,靶本體20係具有一組靶構件20A、20B。在本實施形態中,將靶構件20A作為第一靶構件,將靶構件20B作為第二靶構件。The target body 20 surrounds the outer peripheral surface 101 of the bottom tube 10 . The target body 20 is arranged concentrically with respect to the bottom pipe 10 . The target body 20 has a plurality of target components. For example, in the examples of (a) and (b) in FIG. 1 , the target body 20 has a set of target members 20A, 20B. In this embodiment, let the target member 20A be a 1st target member, and let the target member 20B be a 2nd target member.

靶構件20A、20B分別為圓筒狀。靶構件20A、20B係分別包圍底管10。又,靶構件20A、20B係在底管10的中心軸10c之方向並排設置。The target members 20A and 20B are each cylindrical. The target members 20A, 20B surround the bottom pipe 10, respectively. Moreover, the target members 20A and 20B are arranged side by side in the direction of the central axis 10c of the bottom pipe 10 .

在X-Y軸平面將靶構件20A、20B分別切斷之情形下,靶構件20A、20B的形狀係成為例如環狀。例如,在X-Y軸平面上的靶構件20A、20B各自的剖面形狀係呈相同形狀。又,在Z軸方向上的靶構件20A、20B之各自的長度為相同。When the target members 20A and 20B are respectively cut on the X-Y axis plane, the shape of the target members 20A and 20B is, for example, a ring shape. For example, the cross-sectional shapes of the target members 20A and 20B on the X-Y axis plane are the same shape. In addition, the respective lengths of the target members 20A and 20B in the Z-axis direction are the same.

靶構件20A、20B的各個係不會互相接觸,以在底管10之中心軸10c的方向不互相接觸且隔開的方式被並排設置。換言之,靶本體20係具有在沿著中心軸10c的方向被分割的分割構造。The respective target members 20A, 20B are arranged side by side so as not to contact each other in the direction of the central axis 10c of the bottom pipe 10 and spaced apart from each other without contacting each other. In other words, the target body 20 has a divided structure divided in a direction along the central axis 10c.

於在中心軸10c的方向相鄰的靶構件20A與靶構件20B之間係形成有間隙(分割部)201。間隙201係環繞底管10之中心軸10c的周圍。間隙201係在中心軸10c的方向上位於凹部204的中央。關於間隙201之中心軸10c的方向上的寬並未特別限定,例如設定成不會因為靶構件20A、20B的熱膨脹而彼此互相接觸的程度。例如,間隙201的寬是0.1mm以上至0.5mm以下。A gap (divided portion) 201 is formed between the target member 20A and the target member 20B adjacent in the direction of the central axis 10c. The gap 201 is around the central axis 10c of the bottom pipe 10 . The gap 201 is located at the center of the recess 204 in the direction of the central axis 10c. The width in the direction of the central axis 10c of the gap 201 is not particularly limited, and is set to such an extent that the target members 20A, 20B do not come into contact with each other due to thermal expansion, for example. For example, the width of the gap 201 is not less than 0.1 mm and not more than 0.5 mm.

靶構件20A、20B係由相同材料所構成,例如藉由氧化物的燒結體所構成。作為一例,燒結體係具有In及Zn。例如,燒結體係由In-Ga-Zn-O(IGZO)所構成。例如,燒結體也可以是In-Ti-Zn-Sn-O(ITZTO)燒結體、In-Ti-Zn-Sn-O(IGTO)燒結體等。The target members 20A and 20B are made of the same material, for example, a sintered body of an oxide. As an example, the sintering system has In and Zn. For example, the sintering system is composed of In-Ga-Zn-O (IGZO). For example, the sintered body may be an In-Ti-Zn-Sn-O (ITZTO) sintered body, an In-Ti-Zn-Sn-O (IGTO) sintered body, or the like.

接合材30係被夾設於底管10與靶本體20之間。接合材30係與底管10和靶本體20密接。接合材30係將底管10與複數個靶構件20A、20B之各個予以接合。接合材30係具有例如銦(In)、錫(Sn)、焊材等。The bonding material 30 is sandwiched between the bottom tube 10 and the target body 20 . The bonding material 30 is in close contact with the bottom pipe 10 and the target body 20 . The joining material 30 joins each of the bottom pipe 10 and the plurality of target members 20A, 20B. The bonding material 30 includes, for example, indium (In), tin (Sn), solder, and the like.

遮蔽構件40係被配置於接合材30與靶本體20之間。遮蔽構件40係位於間隙201與接合材30之間。遮蔽構件40係從接合材30那側將間隙201遮蔽。The shielding member 40 is disposed between the bonding material 30 and the target body 20 . The shielding member 40 is located between the gap 201 and the bonding material 30 . The shielding member 40 shields the gap 201 from the bonding material 30 side.

詳細地說明將遮蔽構件40張貼於靶本體20的構造。圖2中的(a)、(b)是將被設置於靶本體與接合材之間的遮蔽構件予以表示的示意性剖視圖。A structure in which the shielding member 40 is attached to the target body 20 will be described in detail. (a) and (b) in FIG. 2 are schematic cross-sectional views showing a shielding member provided between the target body and the bonding material.

遮蔽構件40可以是圖2中的(a)所示的遮蔽構件40A,也可以是圖2中的(b)所示的遮蔽構件40B。The shielding member 40 may be the shielding member 40A shown in FIG. 2( a ), or the shielding member 40B shown in FIG. 2( b ).

如圖2中的(a)所示,於靶本體20係形成有在底管10那側與間隙201連通的凹部204。As shown in (a) of FIG. 2 , a concave portion 204 communicating with the gap 201 on the side of the bottom pipe 10 is formed on the target body 20 .

例如,靶構件20A係具有與靶構件20B對向的端面202(第一端面),靶構件20B係具有與靶構件20A對向的端面203(第二端面)。For example, the target member 20A has an end surface 202 (first end surface) facing the target member 20B, and the target member 20B has an end surface 203 (second end surface) facing the target member 20A.

靶構件20A係具有:內周面205(第一內周面),係構成靶構件20A之內周面的大部分;以及內周面206(第二內周面),係與端面202連接設置。內周面205係經由接合材30而隔著距離A(第一距離)與底管10對向。內周面206係與底管10隔著比距離A還長的距離B(第二距離)而與遮蔽構件40A對向。在靶構件20A的內周面上,藉由內周面205與內周面206而形成有階差。The target member 20A has: an inner peripheral surface 205 (first inner peripheral surface) constituting most of the inner peripheral surface of the target member 20A; and an inner peripheral surface 206 (second inner peripheral surface) connected to the end surface 202. . The inner peripheral surface 205 faces the bottom pipe 10 with a distance A (first distance) interposed therebetween via the bonding material 30 . The inner peripheral surface 206 faces the shielding member 40A across a distance B (second distance) longer than the distance A from the bottom pipe 10 . A level difference is formed by the inner peripheral surface 205 and the inner peripheral surface 206 on the inner peripheral surface of the target member 20A.

靶構件20B係具有:內周面207(第三內周面),係構成靶構件20B之內周面的大部分;以及內周面208(第四內周面),係與端面203連接設置。內周面207係與底管10隔著距離A而與接合材30對向。內周面208係與底管10隔著距離B而與遮蔽構件40A對向。在靶構件20B的內周面上,藉由內周面207與內周面208而形成有階差。The target member 20B has: an inner peripheral surface 207 (third inner peripheral surface) constituting most of the inner peripheral surface of the target member 20B; and an inner peripheral surface 208 (fourth inner peripheral surface) connected to the end surface 203. . The inner peripheral surface 207 faces the bonding material 30 at a distance A from the bottom pipe 10 . The inner peripheral surface 208 faces the shielding member 40A across a distance B from the bottom pipe 10 . On the inner peripheral surface of the target member 20B, a level difference is formed by the inner peripheral surface 207 and the inner peripheral surface 208 .

內周面206與內周面208係隔著間隙201而在中心軸10c的方向並排,藉此於靶本體20係在底管10那側形成有凹部204。凹部204係環繞中心軸10c的周圍。另外,內周面206可以設在靶構件20A的兩端,內周面208可以設在靶構件20B的兩端。The inner peripheral surface 206 and the inner peripheral surface 208 are arranged side by side in the direction of the central axis 10c with the gap 201 interposed therebetween, whereby the concave portion 204 is formed on the bottom pipe 10 side of the target body 20 . The recess 204 surrounds the periphery of the central axis 10c. In addition, the inner peripheral surface 206 may be provided at both ends of the target member 20A, and the inner peripheral surface 208 may be provided at both ends of the target member 20B.

遮蔽構件40A係被收容於凹部204,且從接合材30那側將間隙201遮蔽。又,遮蔽構件40A與底管10之間的距離係比距離A還長。亦即,遮蔽構件40A係不會從凹部204突出地被收容於凹部204。The shielding member 40A is housed in the concave portion 204 and shields the gap 201 from the side of the bonding material 30 . Also, the distance between the shielding member 40A and the bottom pipe 10 is longer than the distance A. As shown in FIG. That is, the shielding member 40A is accommodated in the recessed part 204 without protruding from the recessed part 204 .

遮蔽構件40A係具有:黏著片(adhesive sheet)401,係具有黏著性;以及樹脂片402,係具有電漿(plasma)抗性。樹脂片402係被設置於靶構件20A、20B與黏著片401之間。樹脂片402是遮蔽構件40A的遮蔽基材。黏著片401是遮蔽構件40A的張貼材。The shielding member 40A has: an adhesive sheet 401 having adhesiveness; and a resin sheet 402 having plasma resistance. The resin sheet 402 is provided between the target members 20A, 20B and the adhesive sheet 401 . The resin sheet 402 is a shielding base material of the shielding member 40A. The adhesive sheet 401 is a sticker of the shielding member 40A.

樹脂片402係跨過間隙201,且樹脂片402的一部分於間隙201露出。樹脂片402係藉由黏著片401而從接合材30那側分別被張貼於靶構件20A、20B。黏著片401及樹脂片402各自的材料係包含例如聚醯亞胺(polyimide)、氟樹脂、聚矽氧(silicone)樹脂等。The resin sheet 402 straddles the gap 201 , and a part of the resin sheet 402 is exposed in the gap 201 . The resin sheet 402 is pasted on the target members 20A and 20B from the side of the bonding material 30 through the adhesive sheet 401 . The respective materials of the adhesive sheet 401 and the resin sheet 402 include, for example, polyimide, fluororesin, silicone resin, and the like.

另一方面,圖2中的(b)所示的遮蔽構件40B係具有:黏著片401、金屬片403及氧化物層404。遮蔽構件40B係具有以下的積層構造:從接合材30朝向靶構件20A、20B照黏著片401/金屬片403/氧化物層404的順序並排的構造。在遮蔽構件40B中,金屬片403係具有作為將黏著片401與氧化物層404接合且將各自的應力予以緩和之中間層的功能,氧化物層404係具有作為遮蔽基材的功能。On the other hand, the shielding member 40B shown in (b) in FIG. 2 has an adhesive sheet 401 , a metal sheet 403 , and an oxide layer 404 . The shielding member 40B has a laminated structure in which the adhesive sheet 401 /metal sheet 403 /oxide layer 404 are arranged in order from the bonding material 30 toward the target members 20A, 20B. In the shielding member 40B, the metal sheet 403 functions as an intermediate layer that joins the adhesive sheet 401 and the oxide layer 404 and relaxes respective stresses, and the oxide layer 404 functions as a shielding base material.

氧化物層404係跨過間隙201,且氧化物層404的一部分於間隙201露出。進一步地,氧化物層404係隔著金屬片403而藉由黏著片401從接合材30那側分別被張貼於靶構件20A、20B。The oxide layer 404 straddles the gap 201 , and a part of the oxide layer 404 is exposed in the gap 201 . Further, the oxide layer 404 is pasted on the target members 20A and 20B from the side of the bonding material 30 through the adhesive sheet 401 via the metal sheet 403 .

金屬片403係包含例如鈦(Ti)。氧化物層404係由與靶構件20A、20B相同之材料所構成。藉此,在濺鍍時,即使遮蔽構件40B暴露於電漿,靶本體20之成分以外的成分也不易混合存在於被覆膜中。The metal sheet 403 includes, for example, titanium (Ti). The oxide layer 404 is made of the same material as the target members 20A, 20B. Thereby, even if the shielding member 40B is exposed to plasma during sputtering, components other than the components of the target body 20 are less likely to be mixed in the coating film.

因應遮蔽構件40B的厚度而適當地將距離B的長度設定為距離B’(B’>B)。又,在將接合材30填充於底管10與靶本體20之間以後,於凹部204的一部分也注入有接合材30。The length of the distance B is appropriately set as the distance B' (B'>B) in accordance with the thickness of the shielding member 40B. In addition, after the bonding material 30 is filled between the base pipe 10 and the target body 20 , the bonding material 30 is also injected into a part of the concave portion 204 .

對濺鍍靶1的製造方法進行說明。The manufacturing method of the sputtering target 1 is demonstrated.

首先,將靶構件20A與靶構件20B以在各自的中心軸方向隔開的方式並排成直行狀。此時,間隙201係藉由將靶構件20A及靶構件20B並排而形成,於靶構件20A及靶構件20B各自的內部形成有與間隙201連通的凹部204。First, the target member 20A and the target member 20B are arranged in a straight line so as to be spaced apart from each other in the central axis direction. At this time, the gap 201 is formed by arranging the target member 20A and the target member 20B, and the recess 204 communicating with the gap 201 is formed in each of the target member 20A and the target member 20B.

接下來,如圖2中的(a)、(b)所示,將遮蔽構件40(遮蔽構件40A或遮蔽構件40B)收容於凹部204,藉由遮蔽構件40將間隙201從靶構件20A及靶構件20B各自的內側遮蔽。藉此,形成有用遮蔽構件40將靶構件20A與靶構件20B連結而成的靶本體20。Next, as shown in (a) and (b) in FIG. The respective insides of the members 20B are shielded. Thereby, the target main body 20 in which the target member 20A and the target member 20B are connected by the shield member 40 is formed.

接下來,在底管10豎立的狀態下,將已熔融的接合材30從底管10的下方填充至底管10與靶本體20之間。利用了壓力(重力)差的填充、壓入等係在接合材30的填充中被利用。Next, the molten bonding material 30 is filled from below the bottom tube 10 between the bottom tube 10 and the target body 20 in a state where the bottom tube 10 is erected. Filling using a pressure (gravity) difference, press-fitting, and the like are used for filling the joining material 30 .

圖3中的(a)、(b)是表示於靶本體與底管之間填充有接合材的樣子之示意圖。(a) and (b) in FIG. 3 are schematic diagrams showing how the bonding material is filled between the target body and the bottom pipe.

如圖3中的(a)所示,底管10的外周面101係由靶本體20所包圍。然後,在靶本體20之中,於靶構件20A與底管10之間注入有接合材30。即使持續注入接合材30且接合材30到達遮蔽構件40之位置,由於間隙201由遮蔽構件40所遮蔽,因此接合材30也不易從底管10那側向間隙201洩漏。As shown in (a) of FIG. 3 , the outer peripheral surface 101 of the bottom tube 10 is surrounded by the target body 20 . Then, in the target main body 20 , the bonding material 30 is injected between the target member 20A and the base pipe 10 . Even if the bonding material 30 is continuously injected and the bonding material 30 reaches the position of the shielding member 40 , since the gap 201 is covered by the shielding member 40 , the bonding material 30 is not easy to leak from the side of the bottom pipe 10 to the gap 201 .

進一步地,由於遮蔽構件40係被收容於凹部204,故對接合材30來說,通過遮蔽構件40與底管10之間的空間已經確保。藉此,接合材30係不易藉由遮蔽構件40而受到負荷,如圖3中的(b)所示,接合材30也被填充於底管10與靶構件20B之間。Furthermore, since the shielding member 40 is housed in the concave portion 204 , the space between the shielding member 40 and the bottom pipe 10 is ensured for the bonding material 30 . Thereby, the bonding material 30 is less likely to be loaded by the shielding member 40, and as shown in FIG. 3(b), the bonding material 30 is also filled between the base pipe 10 and the target member 20B.

之後,接合材30固化,底管10與靶構件20A係藉由接合材30所接合,且底管10與靶構件20B係藉由接合材30所接合。藉此,靶本體20係形成於底管10的周圍。之後,因應需求來施加將靶構件20A、20B之表面粗糙度(surface roughness)予以調整的完成處理加工(finishing processing)。After that, the bonding material 30 is solidified, the bottom pipe 10 and the target member 20A are bonded by the bonding material 30 , and the bottom pipe 10 and the target member 20B are bonded by the bonding material 30 . Thereby, the target body 20 is formed around the bottom pipe 10 . After that, finishing processing for adjusting the surface roughness of the target members 20A, 20B is applied as required.

對使用濺鍍靶1之情形下的功效之一例進行說明。An example of the effect when using the sputtering target 1 is demonstrated.

在濺鍍靶1中,靶構件20A、20B之間的間隙201係被遮蔽構件40從底管10那側遮蔽。In the sputtering target 1 , the gap 201 between the target members 20A, 20B is shielded by the shield member 40 from the bottom tube 10 side.

藉此,間隙201係藉由遮蔽構件40而自底管10那側被確實地遮蔽。結果,接合材30變得不易插入至間隙201,接合材30的成分、底管10的成分不易混入至被覆膜。又,底管10也不會於間隙201露出,靶構件之成分以外的成分(異物)變得不易從間隙201釋放出來。Thereby, the gap 201 is reliably shielded from the side of the bottom pipe 10 by the shielding member 40 . As a result, it becomes difficult for the bonding material 30 to be inserted into the gap 201, and the components of the bonding material 30 and the bottom pipe 10 are less likely to be mixed into the coating film. Also, the base pipe 10 is not exposed in the gap 201 , and components (foreign matter) other than the components of the target member are less likely to be released from the gap 201 .

藉由將遮蔽構件40收容於凹部204,在接合材30的填充時,遮蔽構件40與底管10之間的空間被確實地確保。藉此,已熔融的接合材30不會藉由遮蔽構件40而受到負荷,無遺漏地遍及底管10與靶構件20A之間、及底管10與靶構件20B之間。By accommodating the shielding member 40 in the concave portion 204 , the space between the shielding member 40 and the bottom pipe 10 is reliably ensured at the time of filling the bonding material 30 . Thereby, the melted bonding material 30 spreads completely between the base pipe 10 and the target member 20A and between the base pipe 10 and the target member 20B without being loaded by the shield member 40 .

又,對遮蔽構件40來說,在接合材30的填充時,不易受到來自接合材30的負荷,遮蔽構件40變得不易從靶本體20剝落。進一步地,由於遮蔽構件40係被收容於凹部204,故在接合材30的填充時遮蔽構件40的位置偏移變得不易發生。藉此,間隙201係藉由遮蔽構件40而確實地被遮蔽。In addition, the shielding member 40 is less likely to receive a load from the bonding material 30 when the bonding material 30 is filled, and the shielding member 40 is less likely to be peeled off from the target body 20 . Furthermore, since the shielding member 40 is housed in the concave portion 204 , positional displacement of the shielding member 40 is less likely to occur during filling of the bonding material 30 . Thereby, the gap 201 is surely shielded by the shielding member 40 .

(變形例)(Modification)

圖4是表示本實施形態之濺鍍靶的變形例之示意性立體圖。FIG. 4 is a schematic perspective view showing a modified example of the sputtering target according to the present embodiment.

在濺鍍靶2中,靶本體20係在底管10的中心軸10c之方向成為行狀而並排設置複數個。凹部204並不限於一組靶構件20A、20B地形成於相鄰的靶構件之間。複數個靶本體20係分別在中心軸10c的方向互相隔開而配置。具有複數個靶本體20之濺鍍靶2在中心軸10c之方向上的長度為2000 mm以上。In the sputtering target 2, the target main bodies 20 are arranged in a row in the direction of the central axis 10c of the bottom tube 10, and are arranged side by side. The concave portion 204 is not limited to one set of target members 20A, 20B and is formed between adjacent target members. The plurality of target bodies 20 are arranged at a distance from each other in the direction of the central axis 10c. The length of the sputtering target 2 which has several target bodies 20 in the direction of the central axis 10c is 2000 mm or more.

根據此種構成,除了上述功效,能夠簡便地使濺鍍靶在中心軸10c的方向上的長度變長。According to such a structure, in addition to the effect mentioned above, the length of the sputtering target in the direction of the central axis 10c can be made long easily.

(實施例)(Example)

作為原料,將一次粒子的平均粒徑為1.1μm的In2 O3 粉、一次粒子的平均粒徑為0.5μm的ZnO粉及一次粒子的平均粒徑為1.3μm的Ga2 O3 以氧化物的莫耳比率(molar ratio)成為1:2:1的方式進行了秤量。將這些原料粉末用濕式球磨機粉碎/混合。使用了φ5mm的氧化鋯球(zirconia ball)作為粉碎媒介。以噴霧乾燥機(spray dryer)將已粉碎混合的漿料(slurry)乾燥造粒,得到造粒粉。As raw materials, In 2 O 3 powder with an average primary particle diameter of 1.1 μm, ZnO powder with an average primary particle diameter of 0.5 μm, and Ga 2 O 3 with an average primary particle diameter of 1.3 μm were used as oxides. Weighed in such a way that the molar ratio (molar ratio) became 1:2:1. These raw material powders were pulverized/mixed with a wet ball mill. A zirconia ball (zirconia ball) of φ5 mm was used as a pulverization medium. Dry and granulate the pulverized and mixed slurry with a spray dryer (spray dryer) to obtain granulated powder.

對內部設置有金屬製的芯棒之聚氨酯(polyurethane)製的橡膠模具填充造粒粉,將造粒粉密封後,以98 MPa的壓力進行CIP(Cold Isostatic Pressing;冷均壓)成形而得到圓筒狀的成形體。將所得到的成形體用設定溫度1500℃、10小時進行焙燒,藉此得到圓筒型的焙燒體(靶構件20A、20B)。進一步地,將靶構件以成為外徑155 mm、內徑135 mm、長度260 mm的方式進行了機械加工。A rubber mold made of polyurethane (polyurethane) with a metal mandrel inside is filled with granulated powder, sealed with the granulated powder, and subjected to CIP (Cold Isostatic Pressing; Cold Isostatic Pressing) molding at a pressure of 98 MPa to obtain a round mold. Cylindrical molded body. The obtained molded body was fired at a set temperature of 1500° C. for 10 hours to obtain a cylindrical fired body (target members 20A, 20B). Further, the target member was machined so as to have an outer diameter of 155 mm, an inner diameter of 135 mm, and a length of 260 mm.

如圖2所示,分別在靶構件20A、20B形成了凹部204,上述凹部204係在使兩個靶構件20A、20B各自的端面對向時所形成。形成於一個靶構件的凹部204(內周面206或內周面206208)在中心軸10c的方向上的長度為10 mm。亦即,凹部在中心軸10c上的長度是:10 mm兩倍的長度再加上間隙201的寬後的長度。凹部204的深度是0.5 mm。內周面206係形成於靶構件20A的兩端,內周面208係形成於靶構件20B的兩端。As shown in FIG. 2 , recesses 204 are formed in the target members 20A and 20B respectively, and the recesses 204 are formed when the respective end faces of the two target members 20A and 20B face each other. The length of the concave portion 204 (inner peripheral surface 206 or inner peripheral surface 206208 ) formed in one target member in the direction of the central axis 10 c was 10 mm. That is, the length of the concave portion on the central axis 10 c is: twice the length of 10 mm plus the length of the width of the gap 201 . The depth of the recess 204 is 0.5 mm. The inner peripheral surface 206 is formed at both ends of the target member 20A, and the inner peripheral surface 208 is formed at both ends of the target member 20B.

將3組靶構件20A、20B(合計6個靶構件)配置成直行狀,將對厚度0.025 mm、寬5 mm的聚醯亞胺膜(polyimide film)於中央張貼厚度0.06 mm、寬15 mm的聚醯亞胺膜黏著帶而成之物作為遮蔽構件40,對全部的間隙201從內側沿著圓周張貼。Three sets of target members 20A and 20B (a total of 6 target members) are arranged in a straight line, and a polyimide film (polyimide film) with a thickness of 0.025 mm and a width of 5 mm is pasted in the center. A polyimide film adhesive tape was used as the shielding member 40, and was attached along the circumference from the inside to all the gaps 201.

對圓筒型的靶構件之集合體插入外徑133 mm、內徑125 mm、長度1600 mm之Ti製的底管10後,進行了底管10與靶構件之集合體的位置對準後,對底管10與靶構件的集合體之間注入了已加熱熔融的In。In冷卻後,使用顯微鏡進行了各自的間隙201的觀察,結果確認到In沒有浸入到間隙201的情形。After inserting the base pipe 10 made of Ti with an outer diameter of 133 mm, an inner diameter of 125 mm, and a length of 1600 mm into the aggregate of cylindrical target members, and aligning the base pipe 10 with the aggregate of target members, Heated and melted In was injected between the assembly of the bottom pipe 10 and the target member. After In was cooled, the respective gaps 201 were observed using a microscope, and it was confirmed that In did not penetrate into the gaps 201 .

以上,對本發明的實施形態進行了說明,但本發明並非僅限定於上述的實施形態,當然能夠施加各種變更。各實施形態不限於獨立的形態,只要技術上允許則能夠進行複合。As mentioned above, although embodiment of this invention was described, this invention is not limited only to the said embodiment, It goes without saying that various changes can be added. Each embodiment is not limited to an independent form, and can be combined as long as it is technically possible.

1,2:濺鍍靶 10:底管 10c:中心軸 20:靶本體 20A,20B:靶構件 30:接合材 40,40A,40B:遮蔽構件 101:外周面 102:內周面 201:間隙(分割部) 202:端面(第一端面) 203:端面(第二端面) 204:凹部 205:內周面(第一內周面) 206:內周面(第二內周面) 207:內周面(第三內周面) 208:內周面(第四內周面) 401:黏著片 402:樹脂片 403:金屬片 404:氧化物層 A,B,B’:距離1,2: Sputtering target 10: Bottom tube 10c: central axis 20: Target body 20A, 20B: target member 30: Joining material 40, 40A, 40B: shielding components 101: Outer peripheral surface 102: inner peripheral surface 201: Gap (division part) 202: end face (first end face) 203: End face (second end face) 204: concave part 205: inner peripheral surface (first inner peripheral surface) 206: inner peripheral surface (second inner peripheral surface) 207: inner peripheral surface (third inner peripheral surface) 208: inner peripheral surface (fourth inner peripheral surface) 401: Adhesive sheet 402: resin sheet 403: metal sheet 404: oxide layer A,B,B': distance

[圖1]中的(a)是表示本實施形態之濺鍍靶的示意性立體圖。圖1中的(b)是表示本實施形態之濺鍍靶的示意性剖視圖。 [圖2]是將被設置於靶本體與接合材之間的遮蔽構件予以表示的示意性剖視圖。 [圖3]是表示於靶本體與底管之間填充有接合材的樣子之示意圖。 [圖4]是表示本實施形態之濺鍍靶的變形例之示意性立體圖。(a) in [FIG. 1] is a schematic perspective view which shows the sputtering target of this embodiment. (b) in FIG. 1 is a schematic cross-sectional view which shows the sputtering target of this embodiment. [ Fig. 2 ] is a schematic cross-sectional view showing a shielding member provided between the target body and the bonding material. [ Fig. 3 ] is a schematic diagram showing a state in which a bonding material is filled between the target body and the bottom pipe. [FIG. 4] It is a schematic perspective view which shows the modification of the sputtering target of this embodiment.

1:濺鍍靶 1: Sputtering target

10:底管 10: Bottom tube

10c:中心軸 10c: central axis

20:靶本體 20: Target body

20A,20B:靶構件 20A, 20B: target member

30:接合材 30: Joining material

40:遮蔽構件 40: Shielding components

101:外周面 101: Outer peripheral surface

102:內周面 102: inner peripheral surface

201:間隙(分割部) 201: Gap (division part)

Claims (13)

一種濺鍍靶,係具備:筒狀的底管;靶本體,係具有將前述底管之外周面予以包圍的複數個圓筒狀的靶構件,前述複數個靶構件係分別以在前述底管之中心軸方向隔開的方式並排設置,藉由前述複數個靶構件在前述中心軸方向並排,在相鄰的靶構件之間形成的間隙係環繞前述底管的中心軸周圍,且與前述間隙連通並環繞前述中心軸周圍的凹部係形成於前述複數個靶構件的內側;接合材,係被設置於前述底管與前述靶本體之間,將前述底管與前述複數個靶構件的各個予以接合;以及遮蔽構件,係被收容於前述接合材與前述靶本體之間的前述凹部,前述遮蔽構件的兩側係分別與前述複數個靶構件接合,前述遮蔽構件的內側係以從前述接合材之側遮蔽前述間隙之方式與前述接合材接合,前述遮蔽構件的外側係以從前述間隙露出但不會從前述凹部突出到前述間隙之方式配置於前述凹部。 A sputtering target is provided with: a cylindrical bottom tube; a target body has a plurality of cylindrical target components surrounding the outer peripheral surface of the bottom tube, and the plurality of target components are formed on the bottom tube respectively. The center axis direction of the bottom tube is arranged side by side in a manner spaced apart, and the aforementioned plurality of target members are arranged side by side in the direction of the aforementioned center axis, and the gap formed between adjacent target members surrounds the center axis of the aforementioned bottom tube, and is in line with the aforementioned gap. The concave part communicating with and surrounding the aforementioned central axis is formed inside the aforementioned plurality of target members; the bonding material is provided between the aforementioned bottom tube and the aforementioned target body, and connects the aforementioned bottom tube and each of the aforementioned plurality of target members. bonding; and a shielding member, which is accommodated in the aforementioned recess between the aforementioned bonding material and the aforementioned target body, the two sides of the aforementioned shielding member are respectively bonded to the aforementioned plurality of target members, and the inner side of the aforementioned shielding member is formed from the aforementioned bonding material The side of the shielding member is bonded to the bonding material so as to cover the gap, and the outer side of the shielding member is disposed in the recess in such a manner that it is exposed from the gap but does not protrude from the recess into the gap. 如請求項1所記載之濺鍍靶,其中前述遮蔽構件係具有:氧化物層,係設置於前述遮蔽構件的外側,並由與前述靶構件相同之材料所構成。 The sputtering target according to claim 1, wherein the shielding member has an oxide layer provided on the outside of the shielding member and is made of the same material as the target member. 如請求項2所記載之濺鍍靶,其中前述遮蔽構件係具有從前述接合材朝向相鄰的前述靶構件照黏著片、金屬片、前述氧化物層的順序並排的積層構造;前述金屬片係具有作為緩和前述黏著片與前述氧化物層的應力之中間層的功能,前述氧化物層係具有遮蔽基材的功能。 The sputtering target according to claim 2, wherein the shielding member has a laminated structure in which an adhesive sheet, a metal sheet, and the oxide layer are arranged side by side in order from the bonding material toward the adjacent target member; the metal sheet is It has the function of being an intermediate layer that relieves the stress between the adhesive sheet and the oxide layer, and the oxide layer has the function of shielding the base material. 如請求項1所記載之濺鍍靶,其中前述相鄰的靶構件係由第一靶構件與第二靶構件所構成;前述第一靶構件係具有與前述第二靶構件對向的第一端面;前述第二靶構件係具有與前述第一靶構件對向的第二端面;前述第一靶構件係具有:第一內周面,係與前述底管隔著第一距離而與前述接合材對向;以及第二內周面,係與前述第一端面連接設置,且與前述底管隔著比前述第一距離還長的第二距離而與前述遮蔽構件對向;前述第一靶構件係藉由前述第一內周面與前述第二內周面而形成有階差;前述第二靶構件係具有:第三內周面,係與前述底管隔著前述第一距離而與前述接合材對向;以及第四內周面,係與前述第二端面連接設置,且與前述底管隔著前述第二距離而與前述遮蔽構件對向;前述第二靶構件係藉由前述第三內周面與前述第四內周面而形成有階差;前述第二內周面與前述第四內周面係隔著前述間隙而在前述中心軸方向並排,藉此於前述靶本體形成有前述凹部。 The sputtering target as described in claim 1, wherein the adjacent target members are composed of a first target member and a second target member; the first target member has a first target member facing the second target member. The end face; the aforementioned second target member has a second end face opposite to the aforementioned first target member; the aforementioned first target member has: a first inner peripheral surface, which is separated from the aforementioned bottom tube by a first distance and joined to the aforementioned and the second inner peripheral surface is connected to the aforementioned first end surface, and is opposite to the aforementioned shielding member with the aforementioned bottom pipe separated by a second distance longer than the aforementioned first distance; the aforementioned first target The member system has a step difference formed by the aforementioned first inner peripheral surface and the aforementioned second inner peripheral surface; the aforementioned second target member system has: a third inner peripheral surface separated from the aforementioned bottom pipe by the aforementioned first distance. The aforementioned bonding material is opposite; and the fourth inner peripheral surface is connected to the aforementioned second end surface, and is opposed to the aforementioned shielding member with the aforementioned second distance from the aforementioned bottom pipe; the aforementioned second target member is formed by the aforementioned The third inner peripheral surface and the aforementioned fourth inner peripheral surface form a step difference; the aforementioned second inner peripheral surface and the aforementioned fourth inner peripheral surface are arranged side by side in the direction of the aforementioned central axis through the aforementioned gap, whereby the target body The aforementioned concave portion is formed. 如請求項4所記載之濺鍍靶,其中前述遮蔽構件與前述底管之間的距離係比前述第一距離還長。 The sputtering target according to claim 4, wherein the distance between the shielding member and the bottom tube is longer than the first distance. 如請求項1至5中任一項所記載之濺鍍靶,其中前述靶本體係在前述底管的前述中心軸方向成為行狀而並排設置複數個。 The sputtering target according to any one of Claims 1 to 5, wherein the target system is arranged in a row in the direction of the central axis of the bottom tube, and a plurality of them are arranged side by side. 如請求項1至5中任一項所記載之濺鍍靶,其中前述複數個靶構 件係分別藉由氧化物的燒結體所構成。 The sputtering target as described in any one of claims 1 to 5, wherein the plurality of target structures The components are respectively composed of sintered bodies of oxides. 如請求項6所記載之濺鍍靶,其中前述複數個靶構件係分別藉由氧化物的燒結體所構成。 The sputtering target as described in claim 6, wherein the plurality of target members are each formed of a sintered body of oxide. 如請求項7所記載之濺鍍靶,其中前述氧化物係具有In、Ga及Zn。 The sputtering target according to claim 7, wherein the oxide system contains In, Ga, and Zn. 如請求項8所記載之濺鍍靶,其中前述氧化物係具有In、Ga及Zn。 The sputtering target according to claim 8, wherein the oxide system contains In, Ga, and Zn. 一種濺鍍靶的製造方法,係製造具有筒狀的底管、靶本體及接合材之濺鍍靶,前述靶本體係包圍前述底管,前述接合材係被夾設於前述底管與前述靶本體之間且將前述底管與前述靶本體予以接合;前述濺鍍靶的製造方法係如下述:將筒狀的第一靶構件與筒狀的第二靶構件以在各自的中心軸方向隔開的方式並排;將藉由並排前述第一靶構件及前述第二靶構件所形成的間隙予以形成,並且將與前述間隙連通並環繞前述前述底管的中心軸的周圍的凹部形成在前述第一靶構件及前述第二靶構件各自的內側;將遮蔽構件收容於前述凹部,且藉由前述遮蔽構件將前述間隙從前述第一靶構件及前述第二靶構件各自的內側遮蔽;用前述第一靶構件及前述第二靶構件包圍前述底管的外周面;在將已熔融的前述接合材填充於前述第一靶構件與前述底管之間後,將已熔融的前述接合材通過前述遮蔽構件與前述底管之間而填充於前述第二靶構件與前述底管之間; 將前述接合材固化,藉此將前述第一靶構件與前述底管之間及前述第二靶構件與前述底管之間予以接合,且將具有前述第一靶構件及前述第二靶構件的前述靶本體形成在前述底管之周圍,將前述遮蔽構件收容於前述接合材與前述靶本體之間的前述凹部,將前述遮蔽構件的兩側分別與前述複數個靶構件接合,以從前述接合材之側遮蔽前述間隙之方式將前述遮蔽構件的內側與前述接合材接合,以從前述間隙露出但不會從前述凹部突出到前述間隙之方式將前述遮蔽構件的外側配置於前述凹部。 A method for manufacturing a sputtering target, which is to manufacture a sputtering target having a cylindrical bottom tube, a target body and a bonding material, the aforementioned target system surrounds the aforementioned bottom tube, and the aforementioned bonding material is sandwiched between the aforementioned bottom tube and the aforementioned target between the main body and the aforementioned bottom tube and the aforementioned target body; The gap formed by the side-by-side arrangement of the aforementioned first target member and the aforementioned second target member is formed, and a recess communicating with the aforementioned gap and surrounding the center axis of the aforementioned bottom tube is formed in the aforementioned first target member. Each inner side of a target member and the aforementioned second target member; the shielding member is accommodated in the aforementioned recess, and the aforementioned gap is shielded from the respective inner sides of the aforementioned first target member and the aforementioned second target member by the aforementioned shielding member; A target member and the second target member surround the outer peripheral surface of the bottom pipe; after the molten bonding material is filled between the first target member and the bottom pipe, the molten bonding material is passed through the shield between the member and the aforementioned bottom pipe and fill between the aforementioned second target member and the aforementioned bottom pipe; The bonding material is solidified to join between the first target member and the bottom pipe and between the second target member and the bottom pipe, and to combine the first target member and the second target member The target body is formed around the bottom tube, the shielding member is accommodated in the recess between the bonding material and the target body, and both sides of the shielding member are joined to the plurality of target members respectively, so that the joint The inner side of the shielding member is joined to the bonding material so that the side of the material covers the gap, and the outer side of the shielding member is arranged in the recess so that it is exposed from the gap but does not protrude from the recess into the gap. 如請求項11所記載之濺鍍靶的製造方法,其中前述遮蔽構件係具有:氧化物層,係設置於前述遮蔽構件的外側,並由與前述靶構件相同之材料所構成。 The method of manufacturing a sputtering target according to claim 11, wherein the shielding member has an oxide layer provided on the outside of the shielding member and is made of the same material as the target member. 如請求項12所記載之濺鍍靶的製造方法,其中前述遮蔽構件係具有從前述接合材朝向相鄰的前述靶構件照黏著片、金屬片、前述氧化物層的順序並排的積層構造;前述金屬片係具有作為緩和前述黏著片與前述氧化物層的應力之中間層的功能,前述氧化物層係具有遮蔽基材的功能。The method for manufacturing a sputtering target according to claim 12, wherein the shielding member has a laminated structure in which an adhesive sheet, a metal sheet, and the oxide layer are arranged side by side in order from the bonding material toward the adjacent target member; The metal sheet has the function of being an intermediate layer for relieving the stress between the adhesive sheet and the oxide layer, and the oxide layer has the function of shielding the base material.
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