TWI796562B - Sputtering target and method for manufacturing sputtering target - Google Patents
Sputtering target and method for manufacturing sputtering target Download PDFInfo
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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Abstract
Description
本發明係關於一種濺鍍靶(sputtering target)以及濺鍍靶的製造方法。The invention relates to a sputtering target and a manufacturing method of the sputtering target.
伴隨著薄型電視的大畫面化,在製造平板顯示器(flat panel display)時所使用的濺鍍靶正進行著大型化。伴隨於此,出現了大面積的氧化物靶。特別是,正對安裝有長且圓筒型之氧化物靶的成膜裝置進行開發。為了得到長的圓筒型之氧化物靶,提供有用接合材將複數個圓筒型的氧化物燒結體(sintered oxide)與圓筒型的底管(backing tube)予以接合的方法。Along with the enlargement of the screen of a thin TV, the size of the sputtering target used at the time of manufacture of a flat panel display (flat panel display) is advancing. Accompanied by this, a large-area oxide target has emerged. In particular, a film-forming device equipped with a long cylindrical oxide target is being developed. In order to obtain a long cylindrical oxide target, a method of joining a plurality of cylindrical oxide sintered bodies (sintered oxide) and a cylindrical backing tube with a bonding material is provided.
但是,在以複數個靶構件構成濺鍍靶的情形下,相鄰的靶構件彼此因靶構件的熱膨脹而接觸,有靶構件會破裂的情形。為了防止因該接觸所造成的破裂,有在相鄰的靶構件之間設有空隙之情形(例如參照專利文獻1)。However, when the sputtering target is constituted by a plurality of target members, adjacent target members may come into contact with each other due to thermal expansion of the target members, and the target members may be broken. In order to prevent breakage due to this contact, a gap may be provided between adjacent target members (for example, refer to Patent Document 1).
但是,若設有空隙,則接合材會侵入空隙、底管於空隙處露出等,而有靶材以外的成分會附著於空隙的可能性。若引起此種現象,則靶材以外的成分會混入至被覆膜,被覆膜的特性會惡化。又,也會成為在成膜步驟中的異常放電之主要因素。However, if a void is provided, the bonding material may penetrate into the void, and the bottom tube may be exposed in the void, and components other than the target material may adhere to the void. If such a phenomenon occurs, components other than the target material will be mixed into the coating film, and the properties of the coating film will deteriorate. Also, it becomes a factor of abnormal discharge in the film forming step.
為了對應處理此種問題,例如在平面(planar)型的分割型濺鍍靶中係採取有以下對策:從底板(backing plate)側將遮蔽構件張貼於鄰接的靶構件之間的空隙,防止接合材往空隙侵入、底板往空隙露出(例如參照專利文獻2)。 [先前技術文獻] [專利文獻]In order to cope with this problem, for example, the following countermeasures are taken in planar split sputtering targets: a shielding member is attached to the gap between adjacent target members from the backing plate side to prevent bonding. The material penetrates into the gap, and the bottom plate is exposed to the gap (for example, refer to Patent Document 2). [Prior Art Literature] [Patent Document]
[專利文獻1]日本特開2015-168832號公報。 [專利文獻2]日本專利第4961514號公報。[Patent Document 1] Japanese Patent Laid-Open No. 2015-168832. [Patent Document 2] Japanese Patent No. 4961514.
[發明所欲解決之課題][Problem to be Solved by the Invention]
然而,在平面型的濺鍍靶中,一般的接合手法是在使靶構件與底板隔著接合材而對向後使彼此互貼以進行接合,但相對於此,在圓筒型的濺鍍靶中有採取以下對策的情形:將接合材注入於靶構件與底管之間而將靶構件與底管予以接合。因此,在製造圓筒型的濺鍍靶時,在接合材注入時如何抑制遮蔽構件的剝離變得重要。However, in the planar sputtering target, the general bonding method is to make the target member and the bottom plate face each other through the bonding material and then stick each other to bond. However, in the cylindrical sputtering target There are cases in which a joint material is injected between the target member and the bottom pipe to join the target member and the bottom pipe. Therefore, when manufacturing a cylindrical sputtering target, it becomes important how to suppress peeling of a shielding member at the time of injection|pouring of a bonding material.
有鑑於以上般的狀況,本發明之目的係在於提供一種遮蔽構件的剝離被抑制了的濺鍍靶以及濺鍍靶的製造方法。 [用以解決課題之手段]In view of the above-mentioned situation, the object of this invention is to provide the manufacturing method of the sputtering target and the sputtering target which suppressed peeling of a shielding member. [Means to solve the problem]
為了達成上述目的,本發明的一形態之濺鍍靶係具備筒狀的底管、靶本體、接合材及遮蔽構件。 上述靶本體係具有將上述底管之外周面予以包圍的複數個圓筒狀的靶構件,上述複數個靶構件係分別以在上述底管之中心軸方向隔開的方式並排設置,藉由上述複數個靶構件在上述中心軸方向並排,在相鄰的靶構件之間形成的間隙係環繞上述底管的中心軸周圍,且與上述間隙連通的凹部係形成於上述底管那側。 上述接合材係被設置於上述底管與上述靶本體之間,將上述底管與上述複數個靶構件的各個予以接合。 上述遮蔽構件係被配置於上述接合材與上述靶本體之間,被收容於上述凹部,且從上述接合材那側將上述間隙予以遮蔽。In order to achieve the said object, the sputtering target of one aspect of this invention is provided with the cylindrical bottom pipe, a target main body, a bonding material, and a shielding member. The above-mentioned target system has a plurality of cylindrical target members which surround the outer peripheral surface of the bottom pipe. A plurality of target members are arranged side by side in the direction of the central axis, gaps formed between adjacent target members surround the circumference of the central axis of the bottom pipe, and recesses communicating with the gaps are formed on the bottom pipe side. The bonding material is provided between the bottom pipe and the target body, and joins the bottom pipe and each of the plurality of target members. The shielding member is arranged between the bonding material and the target body, is housed in the concave portion, and shields the gap from the bonding material side.
根據此種濺鍍靶,由於遮蔽構件被收容於凹部,故遮蔽構件的剝離得以抑制。According to such a sputtering target, since a shielding member is accommodated in a recessed part, peeling of a shielding member is suppressed.
在上述濺鍍靶中,也可以是上述相鄰的靶構件係由第一靶構件與第二靶構件所構成;上述第一靶構件係具有與上述第二靶構件對向的第一端面;上述第二靶構件係具有與上述第一靶構件對向的第二端面;上述第一靶構件係具有:第一內周面,係與上述底管隔著第一距離而與上述接合材對向;以及第二內周面,係與上述第一端面連接設置,且與上述底管隔著比上述第一距離還長的第二距離而與上述遮蔽構件對向;上述第一靶構件係藉由上述第一內周面與上述第二內周面而形成有階差;上述第二靶構件係具有:第三內周面,係與上述底管隔著上述第一距離而與上述接合材對向;以及第四內周面,係與上述第二端面連接設置,且與上述底管隔著上述第二距離而與上述遮蔽構件對向;上述第二靶構件係藉由上述第三內周面與上述第四內周面而形成有階差;上述第二內周面與上述第四內周面係隔著上述間隙而在上述中心軸方向並排,藉此於上述靶本體形成有上述凹部。In the above-mentioned sputtering target, it is also possible that the above-mentioned adjacent target member is composed of a first target member and a second target member; the first target member has a first end surface opposite to the second target member; The second target member has a second end surface opposite to the first target member; the first target member has a first inner peripheral surface opposite to the bonding material with a first distance from the bottom tube. and the second inner peripheral surface is connected to the above-mentioned first end surface, and is separated from the above-mentioned bottom pipe by a second distance longer than the above-mentioned first distance and opposite to the above-mentioned shielding member; the above-mentioned first target member is A step difference is formed by the first inner peripheral surface and the second inner peripheral surface; the second target member has a third inner peripheral surface that is bonded to the bottom pipe with the first distance between them. and the fourth inner peripheral surface is connected to the above-mentioned second end surface, and is opposite to the above-mentioned shielding member with the above-mentioned second distance from the above-mentioned bottom pipe; the above-mentioned second target member The inner peripheral surface and the fourth inner peripheral surface form a step difference; the second inner peripheral surface and the fourth inner peripheral surface are arranged side by side in the direction of the central axis through the gap, whereby a gap is formed on the target body. the aforementioned recess.
根據此種濺鍍靶,由於遮蔽構件被收容於在相鄰的靶構件所形成的凹部,故遮蔽構件的剝離得以抑制。According to such a sputtering target, since a shielding member is accommodated in the recessed part formed in the adjacent target member, peeling of a shielding member is suppressed.
在上述濺鍍靶中,上述遮蔽構件與上述底管之間的距離也可以比上述第一距離還長。In the said sputtering target, the distance between the said shielding member and the said bottom pipe may be longer than the said 1st distance.
根據此種濺鍍靶,由於以遮蔽構件與底管之間的距離變得比第一距離還長的方式將遮蔽構件收容於凹部,故遮蔽構件的剝離得以抑制。According to such a sputtering target, since the shielding member is housed in the recess so that the distance between the shielding member and the bottom pipe becomes longer than the first distance, peeling of the shielding member is suppressed.
在上述濺鍍靶中,上述靶本體也可以在上述底管的上述中心軸方向成為行狀而並排設置複數個。In the above-mentioned sputtering target, the above-mentioned target main bodies may be arranged in a row in the direction of the above-mentioned central axis of the above-mentioned bottom pipe, and a plurality of pieces may be arranged side by side.
根據此種濺鍍靶,能夠簡便地得到長條的濺鍍靶。According to such a sputtering target, a long sputtering target can be obtained easily.
在上述濺鍍靶中,上述複數個靶構件也可以分別藉由氧化物的燒結體所構成。In the above-mentioned sputtering target, each of the plurality of target members may be constituted by a sintered body of an oxide.
根據此種濺鍍靶,即使複數個靶構件係分別藉由氧化物的燒結體所構成,接合材對間隙的侵入也會被抑制。According to such a sputtering target, even if each of the plurality of target members is constituted by the sintered body of oxide, the intrusion of the bonding material into the gap is suppressed.
在上述濺鍍靶中,上述氧化物也可以具有In、Ga及Zn。In the said sputtering target, the said oxide may have In, Ga, and Zn.
根據此種濺鍍靶,由於燒結體具有In、Ga及Zn,故形成有穩定的氧化物半導體膜。According to such a sputtering target, since the sintered body contains In, Ga, and Zn, a stable oxide semiconductor film is formed.
為了達成上述目的,在本發明的一形態之濺鍍靶的製造方法中,將筒狀的第一靶構件與筒狀的第二靶構件以在各自的中心軸方向隔開的方式並排。 將藉由並排上述第一靶構件及上述第二靶構件所形成的間隙予以形成,並且將與上述間隙連通的凹部形成在上述第一靶構件及上述第二靶構件各自的內部。 將遮蔽構件於收容上述凹部,且藉由上述遮蔽構件將上述間隙從上述第一靶構件及上述第二靶構件各自的內側遮蔽。 用上述第一靶構件及上述第二靶構件包圍上述底管的外周面;在將已熔融的上述接合材填充於上述第一靶構件與上述底管之間後,將已熔融的上述接合材通過上述遮蔽構件與上述底管之間而填充於上述第二靶構件與上述底管之間;將上述接合材固化,藉此將上述第一靶構件與上述底管之間及上述第二靶構件與上述底管之間予以接合,且將具有上述第一靶構件與上述第二靶構件的上述靶本體形成在上述底管之周圍。In order to achieve the said objective, in the manufacturing method of the sputtering target which concerns on one aspect of this invention, a cylindrical 1st target member and a cylindrical 2nd target member are arrange|positioned so that it may space|interval in each center axis direction. A gap formed by juxtaposing the first target member and the second target member is formed, and a recess communicating with the gap is formed inside each of the first target member and the second target member. A shielding member is accommodated in the concave portion, and the gap is shielded from insides of the first target member and the second target member by the shielding member. The outer peripheral surface of the bottom pipe is surrounded by the first target member and the second target member; after the molten bonding material is filled between the first target member and the bottom pipe, the molten bonding material Between the above-mentioned shielding member and the above-mentioned bottom pipe, it is filled between the above-mentioned second target member and the above-mentioned bottom pipe; The member is joined to the bottom pipe, and the target body having the first target member and the second target member is formed around the bottom pipe.
根據此種濺鍍靶的製造方法,由於遮蔽構件被收容於在相鄰的靶構件所形成的凹部,故遮蔽構件的剝離得以抑制。 [發明功效]According to the manufacturing method of such a sputtering target, since a shielding member is accommodated in the recessed part formed in the adjacent target member, peeling of a shielding member is suppressed. [Efficacy of the invention]
如以上所述,根據本發明提供有一種遮蔽構件的剝離被抑制了的濺鍍靶以及濺鍍靶的製造方法。As described above, according to the present invention, there are provided a sputtering target in which peeling of a shielding member is suppressed, and a method for manufacturing a sputtering target.
以下,一邊參照圖式一邊說明本發明的實施形態。有在各圖式中導入XYZ軸座標的情形。又,有對相同構件或者是具有相同功能之構件附加相同符號的情形,且有在說明該構件後適當省略說明之情形。Hereinafter, embodiments of the present invention will be described with reference to the drawings. There are cases where XYZ axis coordinates are imported into each drawing. In addition, the same reference numerals may be attached to the same members or members having the same functions, and descriptions may be appropriately omitted after describing the members.
圖1中的(a)是表示本實施形態之濺鍍靶的示意性立體圖。圖1中的(b)是表示本實施形態之濺鍍靶的示意性剖視圖。於圖1中的(b)係表示有沿著圖1中的(a)裡之A1-A2線的X-Y軸剖面。(a) in FIG. 1 is a schematic perspective view which shows the sputtering target of this embodiment. (b) in FIG. 1 is a schematic cross-sectional view which shows the sputtering target of this embodiment. (b) in FIG. 1 shows the X-Y axis section along the A1-A2 line in (a) in FIG. 1 .
於圖1中的(a)、(b)所示的濺鍍靶1是用於濺鍍成膜之圓筒狀的靶組件(target assembly)。濺鍍靶1係具備:底管10、靶本體20、接合材30及遮蔽構件40。The
底管10是筒狀體,且底管10的內部為中空狀。底管10係在一軸方向(例如中心軸10c的方向)延伸。中心軸10c的方向是底管10的長邊方向。又,底管10是濺鍍靶1的基材,據此中心軸10c也是濺鍍靶1的中心軸。The
底管10係具有:外周面101,係環繞中心軸10c的周圍;以及內周面102,係位於外周面101的相反側,且環繞中心軸10c的周圍。在與中心軸10c正交的平面(例如X-Y軸平面)將底管10切斷之情形下,底管10的形狀成為例如環狀。The
底管10的材料係具有於導熱性優異的材料,例如鈦(Ti)、銅(Cu)等。於底管10的內部可以適當形成有供冷媒流通的流路。The material of the
靶本體20係包圍底管10的外周面101。靶本體20係對著底管10被配置成同心狀。靶本體20係具有複數個靶構件。例如,在圖1中的(a)、(b)之例中,靶本體20係具有一組靶構件20A、20B。在本實施形態中,將靶構件20A作為第一靶構件,將靶構件20B作為第二靶構件。The
靶構件20A、20B分別為圓筒狀。靶構件20A、20B係分別包圍底管10。又,靶構件20A、20B係在底管10的中心軸10c之方向並排設置。The
在X-Y軸平面將靶構件20A、20B分別切斷之情形下,靶構件20A、20B的形狀係成為例如環狀。例如,在X-Y軸平面上的靶構件20A、20B各自的剖面形狀係呈相同形狀。又,在Z軸方向上的靶構件20A、20B之各自的長度為相同。When the
靶構件20A、20B的各個係不會互相接觸,以在底管10之中心軸10c的方向不互相接觸且隔開的方式被並排設置。換言之,靶本體20係具有在沿著中心軸10c的方向被分割的分割構造。The
於在中心軸10c的方向相鄰的靶構件20A與靶構件20B之間係形成有間隙(分割部)201。間隙201係環繞底管10之中心軸10c的周圍。間隙201係在中心軸10c的方向上位於凹部204的中央。關於間隙201之中心軸10c的方向上的寬並未特別限定,例如設定成不會因為靶構件20A、20B的熱膨脹而彼此互相接觸的程度。例如,間隙201的寬是0.1mm以上至0.5mm以下。A gap (divided portion) 201 is formed between the
靶構件20A、20B係由相同材料所構成,例如藉由氧化物的燒結體所構成。作為一例,燒結體係具有In及Zn。例如,燒結體係由In-Ga-Zn-O(IGZO)所構成。例如,燒結體也可以是In-Ti-Zn-Sn-O(ITZTO)燒結體、In-Ti-Zn-Sn-O(IGTO)燒結體等。The
接合材30係被夾設於底管10與靶本體20之間。接合材30係與底管10和靶本體20密接。接合材30係將底管10與複數個靶構件20A、20B之各個予以接合。接合材30係具有例如銦(In)、錫(Sn)、焊材等。The
遮蔽構件40係被配置於接合材30與靶本體20之間。遮蔽構件40係位於間隙201與接合材30之間。遮蔽構件40係從接合材30那側將間隙201遮蔽。The shielding
詳細地說明將遮蔽構件40張貼於靶本體20的構造。圖2中的(a)、(b)是將被設置於靶本體與接合材之間的遮蔽構件予以表示的示意性剖視圖。A structure in which the shielding
遮蔽構件40可以是圖2中的(a)所示的遮蔽構件40A,也可以是圖2中的(b)所示的遮蔽構件40B。The shielding
如圖2中的(a)所示,於靶本體20係形成有在底管10那側與間隙201連通的凹部204。As shown in (a) of FIG. 2 , a
例如,靶構件20A係具有與靶構件20B對向的端面202(第一端面),靶構件20B係具有與靶構件20A對向的端面203(第二端面)。For example, the
靶構件20A係具有:內周面205(第一內周面),係構成靶構件20A之內周面的大部分;以及內周面206(第二內周面),係與端面202連接設置。內周面205係經由接合材30而隔著距離A(第一距離)與底管10對向。內周面206係與底管10隔著比距離A還長的距離B(第二距離)而與遮蔽構件40A對向。在靶構件20A的內周面上,藉由內周面205與內周面206而形成有階差。The
靶構件20B係具有:內周面207(第三內周面),係構成靶構件20B之內周面的大部分;以及內周面208(第四內周面),係與端面203連接設置。內周面207係與底管10隔著距離A而與接合材30對向。內周面208係與底管10隔著距離B而與遮蔽構件40A對向。在靶構件20B的內周面上,藉由內周面207與內周面208而形成有階差。The
內周面206與內周面208係隔著間隙201而在中心軸10c的方向並排,藉此於靶本體20係在底管10那側形成有凹部204。凹部204係環繞中心軸10c的周圍。另外,內周面206可以設在靶構件20A的兩端,內周面208可以設在靶構件20B的兩端。The inner
遮蔽構件40A係被收容於凹部204,且從接合材30那側將間隙201遮蔽。又,遮蔽構件40A與底管10之間的距離係比距離A還長。亦即,遮蔽構件40A係不會從凹部204突出地被收容於凹部204。The shielding
遮蔽構件40A係具有:黏著片(adhesive sheet)401,係具有黏著性;以及樹脂片402,係具有電漿(plasma)抗性。樹脂片402係被設置於靶構件20A、20B與黏著片401之間。樹脂片402是遮蔽構件40A的遮蔽基材。黏著片401是遮蔽構件40A的張貼材。The shielding
樹脂片402係跨過間隙201,且樹脂片402的一部分於間隙201露出。樹脂片402係藉由黏著片401而從接合材30那側分別被張貼於靶構件20A、20B。黏著片401及樹脂片402各自的材料係包含例如聚醯亞胺(polyimide)、氟樹脂、聚矽氧(silicone)樹脂等。The resin sheet 402 straddles the
另一方面,圖2中的(b)所示的遮蔽構件40B係具有:黏著片401、金屬片403及氧化物層404。遮蔽構件40B係具有以下的積層構造:從接合材30朝向靶構件20A、20B照黏著片401/金屬片403/氧化物層404的順序並排的構造。在遮蔽構件40B中,金屬片403係具有作為將黏著片401與氧化物層404接合且將各自的應力予以緩和之中間層的功能,氧化物層404係具有作為遮蔽基材的功能。On the other hand, the shielding
氧化物層404係跨過間隙201,且氧化物層404的一部分於間隙201露出。進一步地,氧化物層404係隔著金屬片403而藉由黏著片401從接合材30那側分別被張貼於靶構件20A、20B。The
金屬片403係包含例如鈦(Ti)。氧化物層404係由與靶構件20A、20B相同之材料所構成。藉此,在濺鍍時,即使遮蔽構件40B暴露於電漿,靶本體20之成分以外的成分也不易混合存在於被覆膜中。The
因應遮蔽構件40B的厚度而適當地將距離B的長度設定為距離B’(B’>B)。又,在將接合材30填充於底管10與靶本體20之間以後,於凹部204的一部分也注入有接合材30。The length of the distance B is appropriately set as the distance B' (B'>B) in accordance with the thickness of the shielding
對濺鍍靶1的製造方法進行說明。The manufacturing method of the
首先,將靶構件20A與靶構件20B以在各自的中心軸方向隔開的方式並排成直行狀。此時,間隙201係藉由將靶構件20A及靶構件20B並排而形成,於靶構件20A及靶構件20B各自的內部形成有與間隙201連通的凹部204。First, the
接下來,如圖2中的(a)、(b)所示,將遮蔽構件40(遮蔽構件40A或遮蔽構件40B)收容於凹部204,藉由遮蔽構件40將間隙201從靶構件20A及靶構件20B各自的內側遮蔽。藉此,形成有用遮蔽構件40將靶構件20A與靶構件20B連結而成的靶本體20。Next, as shown in (a) and (b) in FIG. The respective insides of the
接下來,在底管10豎立的狀態下,將已熔融的接合材30從底管10的下方填充至底管10與靶本體20之間。利用了壓力(重力)差的填充、壓入等係在接合材30的填充中被利用。Next, the
圖3中的(a)、(b)是表示於靶本體與底管之間填充有接合材的樣子之示意圖。(a) and (b) in FIG. 3 are schematic diagrams showing how the bonding material is filled between the target body and the bottom pipe.
如圖3中的(a)所示,底管10的外周面101係由靶本體20所包圍。然後,在靶本體20之中,於靶構件20A與底管10之間注入有接合材30。即使持續注入接合材30且接合材30到達遮蔽構件40之位置,由於間隙201由遮蔽構件40所遮蔽,因此接合材30也不易從底管10那側向間隙201洩漏。As shown in (a) of FIG. 3 , the outer
進一步地,由於遮蔽構件40係被收容於凹部204,故對接合材30來說,通過遮蔽構件40與底管10之間的空間已經確保。藉此,接合材30係不易藉由遮蔽構件40而受到負荷,如圖3中的(b)所示,接合材30也被填充於底管10與靶構件20B之間。Furthermore, since the shielding
之後,接合材30固化,底管10與靶構件20A係藉由接合材30所接合,且底管10與靶構件20B係藉由接合材30所接合。藉此,靶本體20係形成於底管10的周圍。之後,因應需求來施加將靶構件20A、20B之表面粗糙度(surface roughness)予以調整的完成處理加工(finishing processing)。After that, the
對使用濺鍍靶1之情形下的功效之一例進行說明。An example of the effect when using the
在濺鍍靶1中,靶構件20A、20B之間的間隙201係被遮蔽構件40從底管10那側遮蔽。In the
藉此,間隙201係藉由遮蔽構件40而自底管10那側被確實地遮蔽。結果,接合材30變得不易插入至間隙201,接合材30的成分、底管10的成分不易混入至被覆膜。又,底管10也不會於間隙201露出,靶構件之成分以外的成分(異物)變得不易從間隙201釋放出來。Thereby, the
藉由將遮蔽構件40收容於凹部204,在接合材30的填充時,遮蔽構件40與底管10之間的空間被確實地確保。藉此,已熔融的接合材30不會藉由遮蔽構件40而受到負荷,無遺漏地遍及底管10與靶構件20A之間、及底管10與靶構件20B之間。By accommodating the shielding
又,對遮蔽構件40來說,在接合材30的填充時,不易受到來自接合材30的負荷,遮蔽構件40變得不易從靶本體20剝落。進一步地,由於遮蔽構件40係被收容於凹部204,故在接合材30的填充時遮蔽構件40的位置偏移變得不易發生。藉此,間隙201係藉由遮蔽構件40而確實地被遮蔽。In addition, the shielding
(變形例)(Modification)
圖4是表示本實施形態之濺鍍靶的變形例之示意性立體圖。FIG. 4 is a schematic perspective view showing a modified example of the sputtering target according to the present embodiment.
在濺鍍靶2中,靶本體20係在底管10的中心軸10c之方向成為行狀而並排設置複數個。凹部204並不限於一組靶構件20A、20B地形成於相鄰的靶構件之間。複數個靶本體20係分別在中心軸10c的方向互相隔開而配置。具有複數個靶本體20之濺鍍靶2在中心軸10c之方向上的長度為2000 mm以上。In the
根據此種構成,除了上述功效,能夠簡便地使濺鍍靶在中心軸10c的方向上的長度變長。According to such a structure, in addition to the effect mentioned above, the length of the sputtering target in the direction of the
(實施例)(Example)
作為原料,將一次粒子的平均粒徑為1.1μm的In2 O3 粉、一次粒子的平均粒徑為0.5μm的ZnO粉及一次粒子的平均粒徑為1.3μm的Ga2 O3 以氧化物的莫耳比率(molar ratio)成為1:2:1的方式進行了秤量。將這些原料粉末用濕式球磨機粉碎/混合。使用了φ5mm的氧化鋯球(zirconia ball)作為粉碎媒介。以噴霧乾燥機(spray dryer)將已粉碎混合的漿料(slurry)乾燥造粒,得到造粒粉。As raw materials, In 2 O 3 powder with an average primary particle diameter of 1.1 μm, ZnO powder with an average primary particle diameter of 0.5 μm, and Ga 2 O 3 with an average primary particle diameter of 1.3 μm were used as oxides. Weighed in such a way that the molar ratio (molar ratio) became 1:2:1. These raw material powders were pulverized/mixed with a wet ball mill. A zirconia ball (zirconia ball) of φ5 mm was used as a pulverization medium. Dry and granulate the pulverized and mixed slurry with a spray dryer (spray dryer) to obtain granulated powder.
對內部設置有金屬製的芯棒之聚氨酯(polyurethane)製的橡膠模具填充造粒粉,將造粒粉密封後,以98 MPa的壓力進行CIP(Cold Isostatic Pressing;冷均壓)成形而得到圓筒狀的成形體。將所得到的成形體用設定溫度1500℃、10小時進行焙燒,藉此得到圓筒型的焙燒體(靶構件20A、20B)。進一步地,將靶構件以成為外徑155 mm、內徑135 mm、長度260 mm的方式進行了機械加工。A rubber mold made of polyurethane (polyurethane) with a metal mandrel inside is filled with granulated powder, sealed with the granulated powder, and subjected to CIP (Cold Isostatic Pressing; Cold Isostatic Pressing) molding at a pressure of 98 MPa to obtain a round mold. Cylindrical molded body. The obtained molded body was fired at a set temperature of 1500° C. for 10 hours to obtain a cylindrical fired body (
如圖2所示,分別在靶構件20A、20B形成了凹部204,上述凹部204係在使兩個靶構件20A、20B各自的端面對向時所形成。形成於一個靶構件的凹部204(內周面206或內周面206208)在中心軸10c的方向上的長度為10 mm。亦即,凹部在中心軸10c上的長度是:10 mm兩倍的長度再加上間隙201的寬後的長度。凹部204的深度是0.5 mm。內周面206係形成於靶構件20A的兩端,內周面208係形成於靶構件20B的兩端。As shown in FIG. 2 , recesses 204 are formed in the
將3組靶構件20A、20B(合計6個靶構件)配置成直行狀,將對厚度0.025 mm、寬5 mm的聚醯亞胺膜(polyimide film)於中央張貼厚度0.06 mm、寬15 mm的聚醯亞胺膜黏著帶而成之物作為遮蔽構件40,對全部的間隙201從內側沿著圓周張貼。Three sets of
對圓筒型的靶構件之集合體插入外徑133 mm、內徑125 mm、長度1600 mm之Ti製的底管10後,進行了底管10與靶構件之集合體的位置對準後,對底管10與靶構件的集合體之間注入了已加熱熔融的In。In冷卻後,使用顯微鏡進行了各自的間隙201的觀察,結果確認到In沒有浸入到間隙201的情形。After inserting the
以上,對本發明的實施形態進行了說明,但本發明並非僅限定於上述的實施形態,當然能夠施加各種變更。各實施形態不限於獨立的形態,只要技術上允許則能夠進行複合。As mentioned above, although embodiment of this invention was described, this invention is not limited only to the said embodiment, It goes without saying that various changes can be added. Each embodiment is not limited to an independent form, and can be combined as long as it is technically possible.
1,2:濺鍍靶
10:底管
10c:中心軸
20:靶本體
20A,20B:靶構件
30:接合材
40,40A,40B:遮蔽構件
101:外周面
102:內周面
201:間隙(分割部)
202:端面(第一端面)
203:端面(第二端面)
204:凹部
205:內周面(第一內周面)
206:內周面(第二內周面)
207:內周面(第三內周面)
208:內周面(第四內周面)
401:黏著片
402:樹脂片
403:金屬片
404:氧化物層
A,B,B’:距離1,2: Sputtering target
10:
[圖1]中的(a)是表示本實施形態之濺鍍靶的示意性立體圖。圖1中的(b)是表示本實施形態之濺鍍靶的示意性剖視圖。 [圖2]是將被設置於靶本體與接合材之間的遮蔽構件予以表示的示意性剖視圖。 [圖3]是表示於靶本體與底管之間填充有接合材的樣子之示意圖。 [圖4]是表示本實施形態之濺鍍靶的變形例之示意性立體圖。(a) in [FIG. 1] is a schematic perspective view which shows the sputtering target of this embodiment. (b) in FIG. 1 is a schematic cross-sectional view which shows the sputtering target of this embodiment. [ Fig. 2 ] is a schematic cross-sectional view showing a shielding member provided between the target body and the bonding material. [ Fig. 3 ] is a schematic diagram showing a state in which a bonding material is filled between the target body and the bottom pipe. [FIG. 4] It is a schematic perspective view which shows the modification of the sputtering target of this embodiment.
1:濺鍍靶 1: Sputtering target
10:底管 10: Bottom tube
10c:中心軸 10c: central axis
20:靶本體 20: Target body
20A,20B:靶構件 20A, 20B: target member
30:接合材 30: Joining material
40:遮蔽構件 40: Shielding components
101:外周面 101: Outer peripheral surface
102:內周面 102: inner peripheral surface
201:間隙(分割部) 201: Gap (division part)
Claims (13)
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KR102376282B1 (en) | 2022-03-17 |
JPWO2020250588A1 (en) | 2021-09-13 |
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WO2020250588A1 (en) | 2020-12-17 |
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