CN109379895A - For the equipment, the system for carrying out sputtering sedimentation on substrate and the method for manufacturing the equipment for carrying out material deposition on substrate of material deposition to be carried out on substrate in vacuum deposition process - Google Patents
For the equipment, the system for carrying out sputtering sedimentation on substrate and the method for manufacturing the equipment for carrying out material deposition on substrate of material deposition to be carried out on substrate in vacuum deposition process Download PDFInfo
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- CN109379895A CN109379895A CN201680086715.0A CN201680086715A CN109379895A CN 109379895 A CN109379895 A CN 109379895A CN 201680086715 A CN201680086715 A CN 201680086715A CN 109379895 A CN109379895 A CN 109379895A
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
Abstract
Present disclosure provides a kind of equipment for carrying out material deposition on substrate in vacuum deposition process.The equipment includes: target supporting element；The segmentation of two or more targets, the two or more target segmentations are by the target supports support, wherein being equipped with the first gap between the adjacent target segmentation of the two or more targets segmentation；With two or more adhesive layer parts, corresponding target segmentation in the segmentation of the two or more targets is adhered to the target supporting element by each adhesive layer part of two or more adhesive layer parts, wherein the adhesive layer part of adjacent target segmentation is separated from each other by the second gap for being greater than first gap.
Description
Technical field
The embodiment of present disclosure is related to a kind of for carrying out material deposition on substrate in vacuum deposition process
Equipment, a kind of system for carrying out sputtering sedimentation on substrate and it is a kind of for manufacture in vacuum deposition process
The method of the equipment of material deposition is carried out on substrate.The embodiment of present disclosure particularly sputtering source, such as sputters
Cathode or rotatable sputter cathode.
Background technique
Technology for carrying out layer deposition on substrate includes such as sputtering sedimentation, hot evaporation and chemical vapor deposition
(CVD).Sputter deposition craft can be used in depositing materials on substrates layer, such as conductive or insulation material layer.In sputtering sedimentation
During technique, with the ion bombardment generated in heating region have to be deposited on the target material on substrate target with
The atom of target material is knocking-on from target material surface.By knocking-on atom can on substrate forming material layer.In reactive sputtering
In depositing operation, it can be reacted on substrate with the gas (for example, nitrogen or oxygen) in heating region by knocking-on atom
Form oxide, nitride or the nitrogen oxides of target material.
Coated substrate can be used for such as semiconductor devices and hull cell.As an example, it is heavy that sputtering can be used
Product is to coat the substrate for display.In addition application includes insulating panel, Organic Light Emitting Diode (OLED) panel, has
Substrate, colour filter (color filter) of TFT etc..In addition, the hull cell of such as lithium ion battery is for more and more
In, such as mobile phone, laptop and implantable medical device.
In order to for example carry out material deposition on large area substrates, big target is beneficial.However, manufacture target is (all
Such as ceramic target, tin indium oxide (ITO) target and larger-sized indium gallium zinc oxide (IGZO) target) it may be challenging.
As an example, segment design can be provided for target, that is, several segmentations of target material can be fixed on target supporting element,
For example, being fixed using jointing material.However, interface or joint between adjacent sectional, it is possible to create particle, so as to cause
The quality for being deposited on the material layer on substrate reduces.In addition, jointing material can be from the interface or joint between adjacent sectional
Leakage, for example, when temperature change occurs, so as to cause the generation of arcing (arcing).
In view of above, overcome the problems, such as at least some of this field for being carried out on substrate in vacuum deposition process
Material deposition new equipment, on substrate carry out sputtering sedimentation new system and for manufacture for enterprising in substrate
The new method of the equipment of row material deposition is beneficial.Present disclosure is especially intended to provide and can be avoided for example adjacent
The equipment, system and method that arcing and/or particle generate occur for the interface between target segmentation.
Summary of the invention
In view of above, provide a kind of for carrying out equipment, one kind of material deposition on substrate in vacuum deposition process
For carrying out the system and a kind of equipment for manufacture for the progress material deposition on substrate of sputtering sedimentation on substrate
Method.Other aspect, benefit and the feature of present disclosure are apparent from claims, the description and the appended drawings.
According to the aspect of present disclosure, provide a kind of for carrying out material deposition on substrate in vacuum deposition process
Equipment.The equipment includes: target supporting element；The segmentation of two or more targets, the two or more target segmentations
By the target supports support, wherein being equipped with first between the adjacent target segmentation of the two or more targets segmentation
Gap；With two or more adhesive layer parts, each adhesive layer parts of two or more adhesive layer parts is by described two
The corresponding target segmentation of a or more target segmentation is adhered to the target supporting element, wherein the adhesive layer of adjacent target segmentation
Part is separated from each other by the second gap for being greater than first gap.
According to another aspect of the present disclosure, a kind of system for carrying out sputtering sedimentation on substrate is provided.It is described
System includes: vacuum chamber；With one or more sputtering sedimentation sources in the vacuum chamber, wherein one or more of
At least one sputtering sedimentation source in sputtering sedimentation source includes being used in vacuum deposition process according to embodiment as described herein
The equipment of material deposition is carried out on substrate.
According to the other aspect of the disclosure, a kind of equipment for manufacturing for carrying out material deposition on substrate is provided
Method.The described method includes: using the corresponding adhesive layer of each target segmentation for the segmentation of two or more targets
The segmentation of two or more targets is adhered to target supporting element by part, is equipped with the first gap between adjacent target segmentation, wherein
The adhesive layer part of adjacent target segmentation is separated from each other with the second gap for being greater than first gap.
Embodiment is also directed to the equipment for executing disclosed method and including for executing each side
Equipment part in terms of method.Hardware component, the computer by software programming appropriate, the two can be passed through in terms of these methods
Any combination or execute in any other manner.In addition, according to the embodiment of the present disclosure also directed to for operating institute
The method for the equipment stated.In terms of method for operating the equipment includes the method for executing each function of equipment.
Brief description
In order to which the features described above of present disclosure is understood in detail, the present disclosure summarized briefly above it is more special
Fixed description can be carried out by reference to embodiment.Attached drawing is related to the embodiment of present disclosure, and is described in down:
Fig. 1 is shown according to the heavy for carrying out material on substrate in vacuum deposition process of embodiment as described herein
The schematic cross sectional views of long-pending equipment；
Fig. 2 shows the parts of the equipment of Fig. 1；
Fig. 3 A and Fig. 3 B show influence of the temperature change to bonding material layer；
Fig. 4 shows the signal of the system for carrying out sputtering sedimentation on substrate according to embodiment as described herein
Figure；
Fig. 5 is shown according to embodiment as described herein for manufacturing the equipment for carrying out material deposition on substrate
Method flow chart；
Fig. 6 A is shown according to embodiment as described herein for carrying out material on substrate in vacuum deposition process
Expect the schematic diagram of filling device used in the manufacture of the equipment of deposition；With
Fig. 6 B shows the schematic diagram of the part of the equipment of Fig. 6 A, and wherein filling device has been removed.
Specific embodiment
Reference will now be made in detail to the various embodiments of present disclosure, one or more of these embodiments are shown
It is illustrated in figure.In the description below to attached drawing, same reference numbers indicate same parts.Generally only describe about individual realities
Apply the difference of mode.Each example is provided in a manner of explaining present disclosure, and does not mean that the limitation to present disclosure.
In addition, the feature for being illustrated or described as the part of an embodiment can be used for other embodiments or combine other implementations
Mode is used to generate embodiment further.This specification is intended to include such modifications and variations.
Segment design can be provided for target, wherein several targets segmentation of target material is fixed to target using jointing material
Material supporting element, wherein gap can be equipped between the segmentation of adjacent target.However, in gap location, there may be particles, this can be dropped
The quality of low deposition technique.In addition, jointing material can appear in gap location or come out even from gap, so as to cause arcing
Generation.
Present disclosure provides the adhesive layer part of jointing material being spatially separated, wherein each adhesive layer part is used for
The segmentation of corresponding target is fixed to target supporting element.It is greater than adjacent adhesive layer part (second) gap separated from each other adjacent
(first) gap between target segmentation.Particularly, the gap between adjacent adhesive layer part can be in target supporting element and phase
The interval of undercut area or sky is provided between a part for answering target to be segmented.Therefore, though in the presence of (for example, target supporting element and/
Or target segmentation) temperature change and thermal expansion and shrink, jointing material also not from adjacent target segmentation between gap in out
Come, this can for example prevent arcing.In addition, the joint or interface between adjacent target segmentation can there is no bonding material
Material, this can for example reduce or even particle be avoided to generate.
Fig. 1 is shown according to the heavy for carrying out material on substrate in vacuum deposition process of embodiment as described herein
The schematic cross sectional views of long-pending equipment 100.Fig. 2 shows the parts of the equipment 100 of Fig. 1.
Equipment 100 includes target supporting element 110, two or more targets segmentation 120 supported by target supporting element 110
With two or more adhesive layer parts 130.Each adhesive layer part of two or more adhesive layer parts 130 by two or
The corresponding target segmentation bonding of more targets segmentation 120 is fixed to target supporting element 110.In two or more targets point
The first gap 150 is equipped between the adjacent target segmentation of section 120.The adhesive layer part of adjacent target segmentation is to be greater than the first gap
150 the second gap 160 is separated from each other.
According to some embodiments that can be combined with other embodiments as described herein, equipment 100 is sputter cathode, all
Such as cylindrical sputter cathode or plane sputter cathode.It provides and is described below about cylinder design.However, present disclosure is unlimited
In this, and the embodiment of present disclosure can be realized similarly for planar design.Sputter cathode is including two or more
Multiple target segmentations 120 and target supporting element 110, and may further include the magnet assembly for magnetron sputtering.
Target supporting element 110 can be the cylindrical target supporting element with internal diameter D1 and outer diameter D 2.Similarly, two or
More targets segmentation 120 can be to be segmented with the cylindrical target of internal diameter and outer diameter.Two or more targets segmentation 120
Internal diameter can be greater than target supporting element 110 outer diameter D 2.Difference in diameter can correspond to two or more adhesive layer parts
130 thickness.In some embodiments, target supporting element 110 can be penstock, such as cylindrical penstock.Term " cylinder
Body " is construed as having rounded bottom shape and circular upper shape and connect upper circular and slightly in the lower part circle of lower part
The curved surface region of shape or shell.Target supporting element 110 can be made of ceramic materials.
Cylindrical target supporting element can have the inner space limited by internal diameter D1.In some embodiments, equipment
The magnet assembly of magnetron sputtering is used in 100 includable portion spaces.Target supporting element 110 can have support surface
112, support surface 112 can be the outer surface of the target supporting element 110 for example limited by outer diameter D 2.Support surface 112 can be with
It is configured to support two or more targets segmentation 120, two of them or more adhesive layer part 130 is located at support surface
Between 112 and two or more targets segmentation 120.According to some embodiments, equipment 100 may include cooling duct with
In the magnet assembly in cooling penstock and/or for cooling down penstock.
According to some embodiments that can be combined with other embodiments as described herein, equipment 100 be can be around rotation
Shaft axis A is rotatable, and rotation axis A can be the cylinder axis of cylindrical target supporting element.Rotatable equipment can also be with
Referred to as " rotatable sputtering source " or " rotatable cathode ".Particularly during depositing operation, rotation axis A can be erected substantially
Directly it is orientated.Particularly when being related to axes orientation, " substantially perpendicularly " is understood to allow to have 20 ° or more with vertical direction
The deviation of low (for example, 10 ° or lower).
Equipment 100 has two or more targets segmentation 120, the segmentation 122 of such as the first target and the segmentation of the second target
124.Two or more targets segmentation 120 can also be referred to as " block (tile) " or " target block ".Two or more
Target segmentation 120 can be located on the axial direction of target supporting element 110 adjacent to each other with formation (complete) target.Axial direction side
To the direction that can be parallel to rotation axis A and/or the longitudinal dimension (extension) for being parallel to target supporting element 110
Direction.Two or more targets segmentation 120, which can be configured as, to rotate during sputtering technology around rotation axis A.One
In a little embodiments, two or more targets segmentation 120 can be four to eight or the segmentation of even more targets.As showing
Example, equipment 100 can have six target segmentations.The quantity of target segmentation may depend on target segmentation and/or target supporting element
The length of 110 length in the axial direction and complete target.
The length of (complete) target being made of two or more targets segmentation 120 can be between about 2m and about 4m
In range, and it specifically can be about 2.7m.The length of target supporting element 110 can be greater than the length of target.As an example,
The length of target supporting element 110 can be about 3m.Two or more targets are segmented at least one of 120 and especially own
The length of independent target segmentation can be 300mm or bigger, and specifically can be 200mm to 1500mm, specifically 400 to
135mm, and more specifically from 400mm to 600mm.Target can be by the material system selected from the group being made of following material
At: any combination of ceramic material, tin indium oxide (ITO), indium gallium zinc oxide (IGZO) and the above material.
Two or more targets segmentation 120 is adhered to target supporting element by two or more adhesive layer parts 130
110, for example, support surface 112.Two or more adhesive layer parts 130 are located at two or more targets segmentation 120 and target
By 120 bonding of two or more targets segmentation or fixed to target supporting element 110 between material supporting element 110.Two or more
Each target segmentation of multiple target segmentations 120 uses a corresponding adhesive layer portion for two or more adhesive layer parts 130
Divide and is adhered to target supporting element 110.As an example, first target segmentation 122 is adhered to target using the first adhesive layer part 132
Material supporting element 110, and second target segmentation 124 is adhered to target supporting element 110 using the second adhesive layer part 134.
It can be indium according to the material of some embodiments, two or more adhesive layer parts 130.Two or more
The material of adhesive layer part 130 can also be referred to as " jointing material ".Two or more adhesive layer parts 130 can have
Thickness between 0.1mm and 2mm, specifically between 0.1mm and 2mm, specifically 0.1mm with
Between 1.5mm, and specifically between 0.5mm and 1.5mm.
Two of two or more targets segmentation 120 are adjacent, and target segmentation is separated from each other by the first gap 150.Two or
Two adjacent adhesive layer parts of more adhesive layer parts 130 by dividing each other than the second big gap 160 of the first gap 150
It opens.In other words, the first gap 150 is less than the second gap 160.As an example, the segmentation 122 of the first target and the segmentation of the second target
124 are separated from each other by the first gap 150, and the first adhesive layer part 132 and the second adhesive layer part 134 are by the second gap
160 are separated from each other.The size in the first gap 150 and the second gap 160 can limit under reference temperature.When not sputtered
When, that is, when sputtering stopping, reference temperature can be about the temperature of room temperature (for example, 20 DEG C) and/or equipment 100.It will reason
Solution, for example, during sputtering, the size in the first gap 150 and the second gap 160 can because of target supporting element 110, two or more
Multiple targets are segmented the thermal expansion of at least one of 120 and/or two or more adhesive layer parts 130 and change.As
Example, two or more targets segmentation 120 can equally expand to the left and to the right.In some cases, target supporting element
The expansion of 110 expansion and two or more targets segmentation 120 can be different.As an example, the temperature of target supporting element 110
Temperature with two or more targets segmentation 120 can be different.Specifically, target supporting element 110 can be water cooling, and
Temperature raising during sputtering can be with very little.Two or more targets segmentation 120 faces sputter plasma, and is splashing
Temperature during penetrating increases can be very big.
In some embodiments, target supporting element 110 has for example along longitudinal dimension of rotation axis A.Between first
Gap 150 and the second gap 160 can extend along the rotation axis A of target supporting element 110.Second gap 160 along target
Second dimension G2 of longitudinal dimension of supporting element 110 is greater than longitudinal dimension along target supporting element 110 in the first gap 150
First dimension G1.As an example, individually the length along longitudinal dimension (for example, rotation axis A) of target segmentation can be than list
The length along longitudinal dimension (for example, rotation axis A) of only adhesive layer part is big.
According to some embodiments that can be combined with other embodiments as described herein, the first gap 150 can be along
Rotation axis A has some size, such as the first dimension G1, and the size has between 0.1mm and 3mm
Body between 0.5mm and 1.5mm.In some embodiments, 160 to the first gap 150 of the second gap is big extremely
Few 5%, specifically at least 10%, specifically at least 50%, and more specifically at least 100%.As an example, when the first gap
150 when being 1mm, and the second gap 160 can be 2mm.
Second gap 160 is provided between a part that target supporting element 110 (for example, penstock) and corresponding target are segmented
Undercut area is not filled by interval.Even if there are temperature change and occur target supporting element 110 and/or target segmentation heat it is swollen
Swollen/to shrink, jointing material will not appear in the first gap 150, or will not even come out from the first gap 150.It can be with
Prevent arcing.In addition, the joint or interface between the segmentation of adjacent target can there is no jointing material, thus reduce or
Even particle is avoided to generate.
In some embodiments, the first gap 150 can be aligned or feel relieved (center) relative to the second gap 160, or
The second gap of person 160 can be aligned or feel relieved relative to the first gap 150.Jointing material is not present at the first gap 150.Specifically
Ground, the first gap 150 and the second gap 160 can be relative to longitudinal dimensions perpendicular to target supporting element 110 (for example, rotation
Axis A) planar alignment or centering.The plane can be the central plane in the first gap 150 and the second gap 160.First
Gap 150 and the second gap 160 can be relative to the plane substantial symmetry.
According to some embodiments, the combination in the first gap 150 and the second gap 160 forms the cross of target supporting element 110
T shape or inverted T-shaped in cutting plane.Transversal plane can be substantially parallel to target supporting element 110 longitudinal dimension (for example,
Rotation axis A) plane.Rotation axis A can be located in transversal plane.
The term " gap " that present disclosure uses in the whole text can be regarded as meaning that there is no packing material (such as bonding materials
Material or protection materials) or it is present in any other element of the equipment in gap.Specifically, it is not provided in the second gap 160
The material of such as jointing material or packing material.In other words, the first gap 150 and the second gap 160 can be empty interval.
Although it is to be appreciated, however, that the material or other elements of equipment, during sputtering technology, such as work are not present in gap
The gas of skill gas can reside in gap.Gap is still considered as being not filled by or empty.
According to the different embodiments that can be combined with other embodiments as described herein, target material can selected from by with
The group of lower material composition: ceramics, metal, ITO, IZO, IGZO, AZO, SnO, AlSnO, InGaSnO, titanium, aluminium, copper, molybdenum and with
The combination of upper material.Target material perhaps by be deposited on substrate material provide or by be considered in processing region
Reaction gas reaction and be then deposited on after being reacted with reaction gas the material on substrate offer.
Fig. 3 A and Fig. 3 B show influence of the temperature change to bonding material layer, to illustrate to use the embodiment party of present disclosure
The achievable effect of formula and benefit.
In sputter deposition craft, it can be formed by increasing the reduction brief summary of target temperature during sputtering.In order to increase
Target temperature can reduce target revolving speed and/or can reduce the water flow for for example flowing through the cooling water of penstock.Due to target temperature
The temperature change of degree, such as stop when new target is transmitted in sputtering chamber and sputters so that when target temperature rapid decrease,
Target gap (the first gap) can be with expansion and contraction.Particularly when adhesive layer is set as a pantostrat 330, jointing material can
Plastically to be come out from target gap, as indicated by the reference number 332 in Fig. 3 B, produced so as to cause arcing and/or particle
It is raw.
Jointing material comes out from target gap in order to prevent, and jointing material can be recess.Particularly, in the disclosure
Hold and second gap bigger than the first gap (target gap) is provided.Even if jointing material will not arrive when target temperature changes
Up to the first gap, and it can reduce or even avoid arcing and/or particle to generate.
Fig. 4 shows the system 400 according to embodiment as described herein for carrying out sputtering sedimentation on the substrate 10
Schematic diagram.System 400 can be configured as carrying out sputtering sedimentation on the substrate 10.
According to some embodiments as described herein, system 400 includes 402 (also referred to as " vacuum deposit chamber of vacuum chamber
Room ", " deposition chambers " or " be vacuum-treated chamber ") and vacuum chamber in one or more sputtering sedimentation sources, one of them or
At least one sputtering sedimentation source in multiple sputtering sedimentation sources includes according to embodiment as described herein in vacuum deposition
The equipment of material deposition is carried out in technique on substrate.
As an example, one or more sputtering sedimentations source may include the first sputtering sedimentation source in vacuum chamber 402
480a and the second sputtering sedimentation source 480b.It can will be used to support the substrate of at least one substrate to carry during sputter deposition craft
Body 20 is conveyed into and by vacuum chamber 402, and particularly passes through deposition region.First sputtering sedimentation source 480a and second
Sputtering sedimentation source 480b for example can be according to embodiment as described herein with the segmentation of two or more targets can
Rotating cathode.
As shown in figure 4, other chamber can be equipped with adjacent to vacuum chamber 402.Vacuum chamber 402 can be by with valve
The valve of shell 404 and valve cell 406 is separated with adjacent chamber.With the substrate carrier of at least one substrate on substrate carrier 20
After 20 are inserted into vacuum chamber 402 as shown by arrows, valve cell 406 can be closed.Atmosphere in vacuum chamber 402 can lead to
Cross generation technology vacuum (for example, using the vacuum pump for being connected to vacuum chamber 402) and/or by the way that process gas to be inserted in very
It is individually controlled in deposition region in plenum chamber 402.According to some embodiments, process gas may include inert gas
(such as argon) and/or reaction gas (such as oxygen, nitrogen, hydrogen and ammonia (NH3), ozone (O3), activated gas etc.).
According to some embodiments as described herein, system 400, which can have, is connected to one or more sputtering sedimentation sources
AC power supplies 480.As an example, the first sputtering sedimentation source 480a and the second sputtering sedimentation source 480b may be coupled to AC power supplies
480, the first sputtering sedimentation source 480a and the second sputtering sedimentation source 480b are biased in an alternating fashion.It is one or more
Sputtering sedimentation source may be coupled to identical AC power supplies.In other embodiments, each sputtering sedimentation source can be respectively provided with
AC power supplies.In other embodiment, system 400 can have one or more anodes and one or more DC power supplies with
In progress DC sputtering.
According to embodiment as described herein, sputter deposition craft can be used as magnetron sputtering progress.As used herein,
" magnetron sputtering " refers to the sputtering executed using magnet assembly (for example, the unit that can generate magnetic field).This magnet assembly can
It is made of permanent magnet.This permanent magnet can be arranged in rotatable target or be couple to planar targets, so that free electron
It is trapped in the magnetic field of the generation generated under rotatable target surface.This magnet assembly also may be disposed to be couple to plane yin
Pole.
Equipment and system as described herein can be used for vertical processing substrate.According to some embodiments, substrate carrier 20
It is configurable for for substrate 10 being maintained in substantially vertical orientation.Term " vertical processing substrate " is understood to be different from
" horizontal base plate processing ".For example, vertical processing substrate is related to substrate carrier 20 during substrate processing and substrate 10 substantially
Vertical orientation, wherein being regarded as vertically with several years (for example, up to 10 ° or be even up to 15 °) deviation for being vertically oriented
Processing substrate.Vertical direction can be substantially parallel to gravity.As an example, system 400 can be configured as basic
On carry out layer deposition on the substrate that is vertically oriented.
According to some embodiments, substrate carrier 20 and substrate 10 are static during the sputtering of deposition materials or dynamic
's.According to some embodiments as described herein, dynamic sputter depositing operation can be provided, for example, being used for display manufacturing.
Embodiment as described herein can be used for for example for lithium battery manufacture, electrochromic and/or display
Sputtering sedimentation is carried out on the large-area substrates of manufacture.According to some embodiments, it is (corresponding that large-area substrates can be for the 4.5th generation
In about 0.67m2Substrate (0.73m × 0.92m)), the 5th generation (correspond to about 1.4m2Substrate (1.1m × 1.3m)), the 7.5th generation
(correspond to about 4.29m2Substrate (1.95m × 2.2m)), the 8.5th generation (correspond to about 5.7m2Substrate (2.2m × 2.5m)) or
In even the 10th generation, (corresponds to about 8.7m2Substrate (2.85m × 3.05m)).Even higher generation can be similarly implemented (such as
11st generation and the 12nd generation) and corresponding substrate area.
Term " substrate " as used herein should cover non-flexible substrate (for example, plate) and flexible base board (such as coiled material
Or foil).For example, substrate can have less than 1mm, be particularly less than 0.1mm and more particularly less than 50 μm of thickness.
According to some embodiments, substrate can be made of any material for being suitable for material deposition.For example, substrate can by selected from by
Material in the group of following material composition is made: glass (for example, calcium soda-lime glass, borosilicate glass etc.), metal, polymerization
Object, ceramics, compound-material, carbon fibre material, mica or can be by any other materials or material that depositing operation coats
Combination.
Fig. 5, Fig. 6 A and Fig. 6 B show the manufacturing process of the equipment according to embodiment as described herein.Particularly, Fig. 5 shows
Out according to embodiment as described herein for manufacturing for carrying out material deposition on substrate in vacuum deposition process
The flow chart of the method 500 of equipment.
Method 500 includes the corresponding adhesive layer portion being segmented using each target being segmented for two or more targets
Divide and the segmentation of two or more targets is adhered to target supporting element 110, is equipped with the first gap 150 between adjacent target segmentation
(box 510).The adhesive layer part of adjacent target segmentation is separated from each other with the second gap 160 for being greater than the first gap 150.As
First target segmentation 122 is adhered to target supporting element 110 by the first adhesive layer part 132 by example, and viscous by second
It closes layer part 134 and second target segmentation 124 is adhered to target supporting element 110.
In some embodiments, a target segmentation or the segmentation of multiple targets are positioned relative to target supporting element 110, are made
It obtains and is equipped with gap or interval between support surface and the target segmentation of target supporting element 110.Gap or interval can correspond to
The thickness degree of adhesive layer part, and can be about 1mm.It can be for example via the first gap 150 by the jointing material of such as indium
It pours into gap, target segmentation is adhered to target supporting element 110.As an example, manufacturing process can be at baking oven (oven)
Middle progress.Particularly, the temperature in baking oven can be higher than the fusing point of jointing material, for example, 156 DEG C of the fusing point of indium, and liquid
Jointing material can be filled into the interval between target segmentation and target supporting element 110.Then temperature can be reduced to solidify
Or solidification jointing material is to be fixed to target supporting element 110 for target segmentation.
In some embodiments, target support is adhered to two or more target striping orders (that is, paragraph by paragraph)
Part 110.As an example, the first target segmentation 122 can be positioned relative to target supporting element 110, and it is segmented in the first target
Gap between 122 and target supporting element 110 can be filled with jointing material.Hereafter, the second target segmentation 124 can be relative to
122 positioning of target supporting element 110 and the segmentation of the first target, so that the first gap 150 is located at the segmentation 122 of the first target and the second target
Between material segmentation 124.As an example, spacer can be located between the segmentation 122 of the first target and the second target segmentation 124 with limit
Fixed first gap 150.Then the gap between the second target segmentation 124 and target supporting element 110 can be filled with jointing material.
In this way, it is possible to by the way that the segmentation of two or more targets is adhered to target supporting element 110 succeedingly come manufacturing equipment.
In other embodiment, two or more targets segmentation is simultaneously adhered to target supporting element 110.As
Example, the segmentation of two or more targets, the segmentation 122 of such as the first target and the second target segmentation 124, can be relative to target
Support 110 is simultaneously positioned relative to each other.It then can be with jointing material for example via the first gap between the segmentation of adjacent target
And fill the gap between the segmentation of two or more targets and target supporting element 110.
According to some embodiments, the bonding of two or more targets segmentation includes use in two or more targets
The segmentation of two or more targets is adhered to target supporting element 110 by the jointing material between segmentation and target supporting element 110,
In the first gap 150 be set between the segmentation of adjacent target (box 510), and some bonding materials are removed by the first gap 150
Material is to form the second gap 160.In some embodiments, etching can be used in the removal of jointing material.As an example, can incite somebody to action
Etching solution pours into the first gap 150 to generate the second gap 160.Etching can also from the first gap 150 and particularly
The side wall in corresponding first gap 150 of restriction being segmented from target removes remaining jointing material.In some embodiments, it etches
Solution can be nitric acid.Particularly, nitric acid can etch indium and not etch the ITO of such as target substantially.
Correspond to 160 He of the second gap by providing as explained about Fig. 6 A and figure AB according to some embodiments
The filling device 600 of the shape in optional first gap 150 can generate the second gap 160 between the segmentation of adjacent target
With optional first gap 150.Fig. 6 A shows the schematic diagram of the filling device 600 for manufacturing this equipment.Fig. 6 B shows figure
The schematic diagram of a part of the equipment of 6A, wherein removing filling device 600 after adhesion technique.
As an example, the method includes being 150 He of the first gap during the bonding that two or more targets are segmented
Second gap 160 provides filling device 600.When using filling device 600 between the segmentation of adjacent target, two or more
Target segmentation can sequentially or simultaneously be adhered to target supporting element as previously described.Complete two or more targets
After the adhesion technique of segmentation, (for example, pull-out) filling device can be removed.
The shape of filling device 600 can correspond at least partially to the shape in the first gap 150 and the second gap 160.
Specifically, filling device 600 can be ring-shaped in the case where cylindrical target supporting element.In some embodiments, it fills out
It fills and sets 600 (such as annular filling devices) with T shape or inverted T-shaped shape.As an example, filling device 600 is T shape washer.T
Shape or inverted T-shaped shape can be limited in the plane for being parallel to the central axis of annular filling device, had and are located at the plane
In central axis.Filling device 600 can be made of synthetic material, such as polytetrafluoroethylene (PTFE)
It is heavy for carrying out material on substrate in vacuum deposition process for manufacturing according to embodiment as described herein
The method of long-pending equipment can by way of computer program, software, computer software product and associated controller come
It executes, the controller can have CPU, memory, user interface and the corresponding portion with the equipment for handling large-area substrates
Part communication outputs and inputs device.
Present disclosure provides the adhesive layer part of jointing material being spatially separated, wherein each adhesive layer part is used for
The segmentation of corresponding target is fixed to target supporting element.Adjacent adhesive layer part (second) gap separated from each other is wherein set to be greater than phase
(first) gap between adjacent target segmentation.Particularly, the gap between adjacent adhesive layer part can target supporting element with
The interval of undercut area or sky is provided between a part of corresponding target segmentation.Therefore, even if in the presence of (for example, target supporting element
And/or target segmentation) temperature change and thermal expansion and shrink, jointing material will not from adjacent target be segmented between gap
In come out, this can for example prevent arcing.In addition, the joint or interface between the segmentation of adjacent target can there is no it is viscous
Condensation material, this can for example reduce or even particle be avoided to generate.
Although foregoing teachings are directed to the embodiment of present disclosure, in the base region for not departing from present disclosure
In the case where can design other and further embodiment of present disclosure, and scope of the present disclosure by being appended
Claims determine.
Claims (15)
1. a kind of equipment for carrying out material deposition on substrate in vacuum deposition process, comprising:
Target supporting element；
The segmentation of two or more targets, the two or more targets are segmented by the target supports support, wherein the
One gap is located between the adjacent target segmentation of the two or more target segmentations；With
Two or more adhesive layer parts, each of the two or more adhesive layer parts layer part by described two or
The corresponding target segmentation of more targets segmentation is adhered to the target supporting element,
Wherein the adhesive layer part of adjacent target segmentation is separated from each other with the second gap for being greater than first gap.
2. equipment as described in claim 1, wherein the target supporting element has longitudinal dimension, and wherein between described second
Second dimension of longitudinal dimension along the target supporting element of gap is greater than first gap along the target
First dimension of longitudinal dimension of supporting element.
3. equipment as claimed in claim 1 or 2, wherein the target supporting element is selected from the group being made up of: cylindrical
Any combination of target supporting element, penstock and the above item.
4. equipment as claimed any one in claims 1 to 3, wherein first gap and second gap are along described
The rotation axis of target supporting element extends.
5. equipment according to any one of claims 1 to 4, wherein the first gap described in second gap-ratio is greatly at least
5% or at least 10%.
6. the equipment as described in any one of claims 1 to 5, wherein second gap provide the target supporting element with
Undercut area between a part of corresponding target segmentation.
7. such as equipment described in any one of claims 1 to 6, wherein the combination shape in first gap and second gap
At the T shape or inverted T-shaped in the transversal plane of the target supporting element.
8. the equipment as described in any one of claims 1 to 7, without the material being located in second gap.
9. a kind of system for carrying out sputtering sedimentation on substrate, comprising:
Vacuum chamber；With
One or more sputtering sedimentation sources in the vacuum chamber, wherein one or more of sputtering sedimentation sources are at least
One sputtering sedimentation source includes such as equipment described in any item of the claim 1 to 8.
10. a kind of method for manufacturing the equipment for carrying out material deposition on substrate, which comprises
The corresponding adhesive layer part being segmented using each target for being segmented for two or more targets by described two or
The segmentation of more targets is adhered to target supporting element, is equipped with the first gap between adjacent target segmentation,
Wherein the adhesive layer part of adjacent target segmentation is separated from each other with the second gap for being greater than first gap.
11. method as claimed in claim 10, further comprises:
It is provided during the bonding of the two or more targets segmentation for first gap and second gap
Filling device.
12. method as claimed in claim 11, further comprises:
The filling device is removed after the bonding of the two or more targets segmentation.
13. the method as described in claim 11 or 12, wherein the filling device is T shape washer.
14. method as claimed in claim 10, wherein the bonding of the two or more targets segmentation includes:
Using the jointing material between the segmentation of the two or more targets and the target supporting element by described two or
The segmentation of more targets is adhered to the target supporting element, is equipped with the first gap between adjacent target segmentation,
Some jointing materials are removed by first gap to form second gap.
15. method as claimed in claim 14, wherein the removal of the jointing material includes etching the jointing material
To form second gap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311614877.5A CN117821910A (en) | 2016-06-16 | 2016-06-16 | Apparatus for material deposition on a substrate in a vacuum deposition process, system for sputter deposition on a substrate and method of manufacturing an apparatus for material deposition on a substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2016/037776 WO2017217987A1 (en) | 2016-06-16 | 2016-06-16 | Apparatus for material deposition on a substrate in a vacuum deposition process, system for sputter deposition on a substrate, and method for manufacture of an apparatus for material deposition on a substrate |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311614877.5A Division CN117821910A (en) | 2016-06-16 | 2016-06-16 | Apparatus for material deposition on a substrate in a vacuum deposition process, system for sputter deposition on a substrate and method of manufacturing an apparatus for material deposition on a substrate |
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| CN109379895A true CN109379895A (en) | 2019-02-22 |
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| CN202311614877.5A Pending CN117821910A (en) | 2016-06-16 | 2016-06-16 | Apparatus for material deposition on a substrate in a vacuum deposition process, system for sputter deposition on a substrate and method of manufacturing an apparatus for material deposition on a substrate |
| CN201680086715.0A Pending CN109379895A (en) | 2016-06-16 | 2016-06-16 | For the equipment, the system for carrying out sputtering sedimentation on substrate and the method for manufacturing the equipment for carrying out material deposition on substrate of material deposition to be carried out on substrate in vacuum deposition process |
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| CN202311614877.5A Pending CN117821910A (en) | 2016-06-16 | 2016-06-16 | Apparatus for material deposition on a substrate in a vacuum deposition process, system for sputter deposition on a substrate and method of manufacturing an apparatus for material deposition on a substrate |
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| Country | Link |
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| KR (1) | KR102204230B1 (en) |
| CN (2) | CN117821910A (en) |
| WO (1) | WO2017217987A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111408864A (en) * | 2020-04-27 | 2020-07-14 | 宁波江丰电子材料股份有限公司 | Assembly method of rotary target material |
| TWI796562B (en) * | 2019-06-10 | 2023-03-21 | 日商愛發科股份有限公司 | Sputtering target and method for manufacturing sputtering target |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1107523A (en) * | 1993-11-24 | 1995-08-30 | 应用材料有限公司 | Integrated sputter target assembly |
| CN101578387A (en) * | 2007-08-31 | 2009-11-11 | 株式会社三井金属韩国 | Sputtering target |
| US20140110254A1 (en) * | 2012-10-19 | 2014-04-24 | Infineon Technologies Ag | Backing Plate for a Sputter Target, Sputter Target, and Sputter Device |
| CN103827347A (en) * | 2011-08-25 | 2014-05-28 | 应用材料公司 | Sputtering apparatus and method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007041425A2 (en) * | 2005-10-03 | 2007-04-12 | Thermal Conductive Bonding, Inc. | Very long cylindrical sputtering target and method for manufacturing |
| KR101631935B1 (en) * | 2009-08-07 | 2016-06-21 | 삼성디스플레이 주식회사 | Apparatus of sputtering target |
| US20120222956A1 (en) * | 2011-03-03 | 2012-09-06 | Applied Materials, Inc. | Method and apparatus for forming a cylindrical target assembly |
| KR20150063572A (en) * | 2012-10-09 | 2015-06-09 | 어플라이드 머티어리얼스, 인코포레이티드 | Particle free rotary target and method of manufacturing thereof |
-
2016
- 2016-06-16 CN CN202311614877.5A patent/CN117821910A/en active Pending
- 2016-06-16 CN CN201680086715.0A patent/CN109379895A/en active Pending
- 2016-06-16 WO PCT/US2016/037776 patent/WO2017217987A1/en active Application Filing
- 2016-06-16 KR KR1020197001386A patent/KR102204230B1/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1107523A (en) * | 1993-11-24 | 1995-08-30 | 应用材料有限公司 | Integrated sputter target assembly |
| CN101578387A (en) * | 2007-08-31 | 2009-11-11 | 株式会社三井金属韩国 | Sputtering target |
| CN103827347A (en) * | 2011-08-25 | 2014-05-28 | 应用材料公司 | Sputtering apparatus and method |
| US20140110254A1 (en) * | 2012-10-19 | 2014-04-24 | Infineon Technologies Ag | Backing Plate for a Sputter Target, Sputter Target, and Sputter Device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI796562B (en) * | 2019-06-10 | 2023-03-21 | 日商愛發科股份有限公司 | Sputtering target and method for manufacturing sputtering target |
| CN111408864A (en) * | 2020-04-27 | 2020-07-14 | 宁波江丰电子材料股份有限公司 | Assembly method of rotary target material |
| CN111408864B (en) * | 2020-04-27 | 2022-01-11 | 宁波江丰电子材料股份有限公司 | Assembly method of rotary target material |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190008436A (en) | 2019-01-23 |
| CN117821910A (en) | 2024-04-05 |
| WO2017217987A1 (en) | 2017-12-21 |
| KR102204230B1 (en) | 2021-01-15 |
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Application publication date: 20190222 |