TWI795618B - Inspection device and inspection method - Google Patents
Inspection device and inspection method Download PDFInfo
- Publication number
- TWI795618B TWI795618B TW108145947A TW108145947A TWI795618B TW I795618 B TWI795618 B TW I795618B TW 108145947 A TW108145947 A TW 108145947A TW 108145947 A TW108145947 A TW 108145947A TW I795618 B TWI795618 B TW I795618B
- Authority
- TW
- Taiwan
- Prior art keywords
- emitting elements
- semiconductor light
- electrode
- light emitting
- aforementioned
- Prior art date
Links
- 238000007689 inspection Methods 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 254
- 230000003287 optical effect Effects 0.000 claims abstract description 28
- 238000009434 installation Methods 0.000 claims abstract description 15
- 239000003990 capacitor Substances 0.000 claims abstract description 12
- 238000012360 testing method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 5
- 238000005424 photoluminescence Methods 0.000 claims description 2
- 230000001443 photoexcitation Effects 0.000 claims 1
- 238000012546 transfer Methods 0.000 description 13
- 230000006378 damage Effects 0.000 description 8
- 235000019557 luminance Nutrition 0.000 description 8
- 238000004020 luminiscence type Methods 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 238000012216 screening Methods 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000004831 Hot glue Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Led Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Transplanting Machines (AREA)
Abstract
本發明的課題為在即將安裝之前集中檢查分離之複數個半導體發光元件並篩選發光不良的半導體發光元件,並且將篩選之複數個半導體發光元件藉由暫時固定部以分離排列之狀態搬運至安裝。一種檢查裝置,其具備:第一板,具有第一電極;第二板,具有設置成與第一電極對置之第二電極;絕緣性暫時固定部,將複數個半導體發光元件以分離排列之狀態裝卸自如地暫時固定;驅動電源,相對於隔著檢查空間配置之第一電極及第二電極電性連接;光學儀器,從第一板或第二板中的任一者之側觀察複數個半導體發光元件的發光,暫時固定部具有裝卸自如地安裝於第一電極或第二電極中的任一個,並與複數個半導體發光元件對置之暫時固定部位,藉由暫時固定部位保持複數個半導體發光元件能夠以分離排列之狀態從檢查空間搬運至安裝位置。在第一電極與第二電極之間的檢查空間配置有單獨分離之複數個發光電路部,該發光電路部串聯連接包括複數個半導體發光元件和暫時固定部之電容器,複數個發光電路部中,從驅動電源向複數個半導體發光元件流通正向電流時複數個半導體發光元件發光。The object of the present invention is to intensively inspect the separated plural semiconductor light emitting elements and screen out the semiconductor light emitting elements with poor light emission immediately before mounting, and transport the screened plural semiconductor light emitting elements in a separated and arranged state through the temporary fixing part for mounting. An inspection device comprising: a first board having a first electrode; a second board having a second electrode disposed opposite to the first electrode; an insulating temporary fixing part for separating and arranging a plurality of semiconductor light emitting elements The state is temporarily fixed in a detachable manner; the driving power is electrically connected to the first electrode and the second electrode arranged across the inspection space; the optical instrument is observed from the side of either the first plate or the second plate For the light emission of semiconductor light emitting elements, the temporary fixing part has a temporary fixing part that is detachably mounted on any one of the first electrode or the second electrode, and faces a plurality of semiconductor light emitting elements, and holds a plurality of semiconductor light emitting elements by the temporary fixing part. The light-emitting elements can be transported from the inspection space to the installation position in a separated and arranged state. In the inspection space between the first electrode and the second electrode, a plurality of separately separated light emitting circuit parts are arranged, and the light emitting circuit parts are connected in series including a plurality of semiconductor light emitting elements and a capacitor of a temporary fixing part. Among the plurality of light emitting circuit parts, The plurality of semiconductor light emitting elements emit light when a forward current flows from the driving power source to the plurality of semiconductor light emitting elements.
Description
本發明係有關一種用於功能(光學)檢查包括發光二極體(LED)等之複數個半導體發光元件之檢查裝置及使用檢查裝置之檢查方法。 The present invention relates to an inspection device for functional (optical) inspection of a plurality of semiconductor light-emitting elements including light-emitting diodes (LEDs) and an inspection method using the inspection device.
詳細而言,有關一種用於在安裝複數個半導體發光元件之前的時刻,對排列形成之複數個發光元件在分離狀態下進行發光檢查之檢查裝置及檢查方法。 More specifically, it relates to an inspection device and an inspection method for performing light-emitting inspection of a plurality of light-emitting elements formed in an array in a separated state before mounting a plurality of semiconductor light-emitting elements.
以往,作為該種檢查裝置及檢查方法,有如下者:以與形成於支撐基板(support substrate)上之複數個LED器件(LED devices)的p-n接合之發光部對置之方式,配置具有上側的電極(electrode)之場板(field plate),作為複數個LED器件的下側的電極之共用電極(common electrode)電氣接地,並從外部的電壓源(voltage source)施加至上側電極,藉此複數個LED器件發光,藉由觀察來測量其發光亮度(例如,參閱專利文獻1、專利文獻2)。
Conventionally, as this kind of inspection apparatus and inspection method, there is one in which an LED having an upper side is disposed so as to face a p-n junction light-emitting portion of a plurality of LED devices formed on a support substrate (support substrate). The field plate of the electrode (electrode) is electrically grounded as the common electrode (common electrode) of the lower electrodes of a plurality of LED devices, and is applied to the upper electrode from an external voltage source (voltage source), thereby multiple Each LED device emits light, and its luminous brightness is measured by observation (for example, refer to
複數個LED器件被溝槽(trench)半切,但溝槽不貫穿成為下側電極之公共接觸層(common contact layer),在支撐基板上成為不分離狀態([0048]、Figure3A,3B等)。 A plurality of LED devices are cut in half by trenches, but the trenches do not penetrate the common contact layer (common contact layer) of the lower electrodes, and are not separated on the support substrate ([0048], Figure 3A, 3B, etc.).
亦即,複數個LED器件在與支撐基板不分離之狀態下進行發光測 試,並藉由測量發光來評價其功能。 That is, a plurality of LED devices are subjected to luminescence measurement in a state where they are not separated from the support substrate. test and evaluate its functionality by measuring luminescence.
專利文獻1:國際公開第2018/112267號 Patent Document 1: International Publication No. 2018/112267
專利文獻2:美國專利申請公開第2018/0259570號說明書 Patent Document 2: Specification of US Patent Application Publication No. 2018/0259570
在半導體發光元件中,LED芯片為了降低成本而被小型化,並且正在進行用於高速.高精度地安裝小型化之LED芯片之研究。尤其,用於LED顯示器之LED為稱為微型LED之尺寸為50μm×50μm以下的LED芯片,要求以數μm的精度高速轉印可靠地發光之分斷狀態的LED芯片並進行安裝。 Among semiconductor light-emitting elements, LED chips are miniaturized in order to reduce costs, and are being used for high-speed. Research on mounting miniaturized LED chips with high precision. In particular, LEDs used in LED displays are LED chips with a size of 50 μm × 50 μm or less called micro LEDs, and it is required to transfer and mount LED chips in a disconnected state that reliably emit light at high speed with a precision of several μm.
然而,在專利文獻1中,複數個LED器件在未分離狀態下進行發光測試,因此在安裝各LED器件之芯片焊接步驟中,在未分離狀態下無法進行處理,需要在安裝前藉由切割等單獨地分離複數個LED器件。
However, in
在該種情況下,存在以下問題:即使複數個LED器件與支撐基板在不分離之狀態下藉由發光測試評價為“功能上沒有問題”,亦無法否定由於其後的分離步驟等而產生新的不良之可能性,並且由於無法在即將安裝之前確認發光,因此可靠性差。 In this case, there is a problem that even if the plurality of LED devices and the support substrate are evaluated as "no problem in function" by a light emission test in a state where they are not separated, it cannot be denied that new LED devices are generated due to the subsequent separation steps and the like. Possibility of failure, and since it is impossible to confirm the light emission immediately before installation, the reliability is poor.
在該種情況下,需要一種檢查裝置和檢查方法,其在安裝前檢查分離之複數個LED器件而能夠篩選發光不良的LED器件,並且能夠將篩選之複數個LED器件以分離排列之狀態搬運至安裝。 In this case, there is a need for an inspection device and an inspection method, which can screen LED devices with poor light emission by inspecting a plurality of separated LED devices before mounting, and can transport the screened plurality of LED devices in a separated and arranged state to Install.
又,為了防止由於發光測試而導致之LED器件的損壞,需要在避免電性接觸之低電壓環境下的檢查。 Also, in order to prevent damage to the LED device due to the light-emitting test, it is necessary to check under a low-voltage environment that avoids electrical contact.
為了解決該種課題,本發明之檢查裝置在安裝前以分離狀態光學檢查分離排列之複數個半導體發光元件,其特徵為,具備:第一板,具有第一電極;第二板,具有設置成與前述第一電極對置之第二電極;絕緣性暫時固定部,將前述複數個半導體發光元件以分離排列之狀態裝卸自如地暫時固定;驅動電源,相對於隔著檢查空間配置之前述第一電極及前述第二電極電性連接;光學儀器,從前述第一板或前述第二板中的任一者之側觀察前述複數個半導體發光元件的發光,前述暫時固定部具有裝卸自如地安裝於前述第一電極或前述第二電極中的任一個,並與複數個半導體發光元件對置之暫時固定部位,藉由前述暫時固定部位保持前述複數個半導體發光元件以能夠分離排列之狀態從前述檢查空間搬運至安裝位置,在前述第一電極與前述第二電極之間的前述檢查空間配置有單獨分離之複數個發光電路部,該發光電路部串聯連接包括前述複數個半導體發光元件和前述暫時固定部之電容器,前述複數個發光電路部中,從前述驅動電源向前述複數個半導體發光元件流通正向電流時前述複數個半導體發光元件發光。 In order to solve this kind of problem, the inspection device of the present invention optically inspects a plurality of semiconductor light-emitting elements arranged separately in a separated state before mounting, and is characterized in that it has: a first board with a first electrode; a second board with a The second electrode opposite to the first electrode; the insulating temporary fixing part temporarily fixes the plurality of semiconductor light-emitting elements in a separated and arranged state in a detachable and detachable manner; The electrodes are electrically connected to the aforementioned second electrodes; the optical instrument is used to observe the light emission of the plurality of semiconductor light-emitting elements from the side of any one of the aforementioned first board or the aforementioned second board, and the aforementioned temporary fixing part has the ability to be detachably mounted on Either one of the aforementioned first electrode or the aforementioned second electrode, and a temporary fixing portion facing a plurality of semiconductor light-emitting elements, the aforementioned plurality of semiconductor light-emitting elements can be separated and arranged in a state that can be separated from the aforementioned inspection by means of the temporary fixing portion. The space is transported to the installation position, and the inspection space between the first electrode and the second electrode is provided with a plurality of light-emitting circuit parts that are individually separated, and the light-emitting circuit part is connected in series and includes the plurality of semiconductor light-emitting elements and the temporary fixed In the capacitor part, in the plurality of light emitting circuit parts, when a forward current flows from the driving power supply to the plurality of semiconductor light emitting elements, the plurality of semiconductor light emitting elements emit light.
又,為了解決該種課題,本發明之檢查方法係在安裝前以分離狀態光學檢查分離排列之複數個半導體發光元件,其特徵為,包括:暫時固定步驟,將前述複數個半導體發光元件以分離排列之狀態裝卸自如地暫時固定於絕緣性暫時固定部;設置步驟,在第一板的第一電極或第二板的第二電極中的任一個上裝卸自如地安裝前述暫時固定部,在形成於前述第一電 極與前述第二電極之間之檢查空間形成單獨分離之複數個發光電路部,該發光電路部串聯連接包括前述複數個半導體發光元件和前述暫時固定部之電容器;供給步驟,從前述第一電極及前述第二電極向前述複數個發光電路部施加驅動電源的電壓;及觀察步驟,使用光學儀器從前述第一板或前述第二板中的任一者之側觀察藉由相對於前述複數個發光電路部之電壓的供給而發光之前述複數個半導體發光元件;及安裝步驟,從前述暫時固定部卸下前述複數個半導體發光元件而進行基板安裝,在前述設置步驟中,前述暫時固定部具有相對於前述複數個半導體發光元件的暫時固定部位,並藉由前述暫時固定部位保持前述複數個半導體發光元件以分離排列之狀態能夠從前述檢查空間搬運至安裝位置,在前述觀察步驟中,在前述檢查空間中從前述驅動電源流向前述複數個半導體發光元件流通正向電流時前述複數個半導體發光元件發光,在前述安裝步驟中,從由前述檢查空間向前述安裝位置搬運之前述暫時固定部卸下前述複數個半導體發光元件而進行基板安裝。 Also, in order to solve this problem, the inspection method of the present invention is to optically inspect a plurality of semiconductor light-emitting elements arranged in a separated state before mounting, and is characterized in that it includes: a temporary fixing step, separating the aforementioned plurality of semiconductor light-emitting elements The state of arrangement is temporarily fixed to the insulating temporary fixing part freely; the installation step is to install the aforementioned temporary fixing part on any one of the first electrode of the first plate or the second electrode of the second plate, and after forming In the aforementioned first The inspection space between the electrode and the aforementioned second electrode forms a plurality of light-emitting circuit parts that are individually separated, and the light-emitting circuit parts are connected in series to include the capacitors of the aforementioned plurality of semiconductor light-emitting elements and the aforementioned temporary fixing part; in the supplying step, from the aforementioned first electrode And the aforementioned second electrode applies the voltage of driving power to the aforementioned plurality of light emitting circuit parts; The plurality of semiconductor light emitting elements that emit light by supplying the voltage of the light emitting circuit part; and the mounting step of detaching the plurality of semiconductor light emitting elements from the temporary fixing part and performing substrate mounting. In the installation step, the temporary fixing part has With respect to the temporary fixing portion of the plurality of semiconductor light emitting elements, and the plurality of semiconductor light emitting elements can be transported from the inspection space to the installation position by holding the plurality of semiconductor light emitting elements in a separated and arranged state through the temporary fixing portion. In the inspection space, when a forward current flows from the driving power supply to the plurality of semiconductor light emitting elements, the plurality of semiconductor light emitting elements emit light, and in the aforementioned mounting step, the temporary fixing part transported from the aforementioned inspection space to the aforementioned mounting position is removed. The aforementioned plurality of semiconductor light emitting elements are mounted on a substrate.
1:第一板 1: first board
1a:第一電極 1a: first electrode
2:第二板 2: Second board
2a:第二電極 2a: Second electrode
3(31)(32):暫時固定部 3(31)(32):Temporarily fixed part
3a:暫時固定部位 3a: Temporary fixed position
4:驅動電源 4: Drive power
5:光學儀器 5: Optical instruments
6:介電層 6: Dielectric layer
7:驅動部 7: Drive Department
71:升降用驅動部 71: Drive unit for lifting
72:水平移動用驅動部 72: Drive unit for horizontal movement
8:控制部 8: Control Department
A:檢查裝置 A: Check device
B:檢查設備 B: Check the equipment
D:暗室 D: dark room
E:半導體發光元件 E: Semiconductor light emitting element
E1:發光部 E1: Luminous Department
F:暫時固定芯片群 F: Temporarily fixed chipset
H:保持卡盤 H: Hold Chuck
L:發光電路部 L: Lighting Circuit Department
P2:安裝位置 P2: Installation position
S:檢查空間 S: check space
圖1係表示本發明的實施形態之檢查裝置及檢查方法的整體結構之說明圖,圖1(a)係施加步驟及檢查步驟的局部切除主視圖,圖1(b)係施加步驟及檢查步驟的橫切平面圖。 Fig. 1 is an explanatory diagram showing the overall structure of an inspection device and an inspection method according to an embodiment of the present invention, Fig. 1(a) is a partial cutaway front view of an application step and an inspection step, and Fig. 1(b) is an application step and an inspection step cross-sectional plan.
2係表示本發明的實施形態之檢查裝置及檢查方法的變形例之說明圖,並且圖2(a)~(c)係施加步驟及檢查步驟的局部切除主視圖。 2 is an explanatory diagram showing a modified example of the inspection device and inspection method according to the embodiment of the present invention, and FIGS.
圖3係表示本發明的實施形態之檢查裝置及檢查方法的變形例之說明圖,圖3(a)、圖3(b)係施加步驟及檢查步驟的局部切除主視圖。 Fig. 3 is an explanatory diagram showing a modified example of the inspection device and inspection method according to the embodiment of the present invention, and Fig. 3(a) and Fig. 3(b) are partially cutaway front views of the application step and the inspection step.
圖4係表示本發明的實施形態之檢查裝置及檢查方法的變形例之說明圖,圖4(a)係用暫時固定部搬運複數個半導體發光元件之狀態的局部切除主視圖,圖4(b)係相對於暫時固定部裝卸複數個半導體發光元件之狀態的局部切除主視圖。 Fig. 4 is an explanatory diagram showing a modified example of the inspection device and inspection method according to the embodiment of the present invention, Fig. 4(a) is a partial cutaway front view of a state in which a plurality of semiconductor light-emitting elements are transported by a temporary fixing part, and Fig. 4(b) ) is a partially cutaway front view of a state where a plurality of semiconductor light emitting elements are mounted and detached from the temporary fixing portion.
圖5係表示本發明的實施形態之檢查裝置及檢查方法的變形例之說明圖,圖5(a)係表示光學儀器及驅動部的具體例之局部切除縮小前視圖,圖5(b)係表示光學儀器及驅動部的具體例之縮小橫切平面圖。 Fig. 5 is an explanatory diagram showing a modified example of the inspection device and inspection method according to the embodiment of the present invention, Fig. 5(a) is a partial cutaway front view showing a specific example of an optical device and a drive unit, and Fig. 5(b) is a reduced front view A reduced cross-sectional plan view showing a specific example of an optical device and a driving unit.
圖6係表示本發明的實施形態之檢查裝置及檢查方法的變形例之電路圖,圖6(a)係與圖1~圖5對應之等效電路,圖6(b)係變形例的等效電路。 6 is a circuit diagram showing a modified example of the inspection device and inspection method according to the embodiment of the present invention. FIG. 6(a) is an equivalent circuit corresponding to FIGS. 1 to 5, and FIG. 6(b) is an equivalent circuit of the modified example. circuit.
以下,依據圖式詳細說明本發明的實施形態。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
如圖1~圖6所示,本發明的實施形態之檢查裝置A係,用於在安裝排列形成之複數個半導體發光元件E之前,以單獨分離之排列狀態功能(光學)檢查(發光測試)複數個半導體發光元件E,從而防止安裝光學不良的半導體發光元件E於未然之光學特性測量裝置。 As shown in Figures 1 to 6, the inspection device A of the embodiment of the present invention is used for functional (optical) inspection (luminescent test) in a separate arrangement state before mounting a plurality of semiconductor light emitting elements E formed in an arrangement. A plurality of semiconductor light-emitting elements E, so as to prevent the installation of optically poor semiconductor light-emitting elements E optical characteristic measurement device.
詳細而言,本發明的實施形態之檢查裝置A作為主要的構成要件具備:具有第一電極1a之第一板1;具有第二電極2a之第二板2;為了將複數個半導體發光元件E裝卸自如地暫時固定而設置之暫時固定部3;為了與第一電極1a及第二電極2a電性連接而設置之驅動電源4;及為了從第一板1或第二板2中的一側觀察複數個半導體發光元件E的發光而設置之光學儀器5。
Specifically, the inspection apparatus A according to the embodiment of the present invention includes, as main components: a
此外,具備:設置於第一電極1a或第二電極2a中的任一者的表面或
兩者的表面上之介電層6;為了使第一板1和第二板2相對移動而設置之驅動部7;及為了操作控制驅動電源4及驅動部7而設置之控制部8為較佳。
In addition, it is provided on the surface of any one of the
另外,第一板1和第二板2通常設置成在上下方向上對置。在圖示例中,下方配置有第一板1,第二板2配置於上方。在此,以下將第一板1與第二板2對置之方向稱為“Z方向”。以下將與Z方向交叉之沿第一板1和第二板2之方向稱為“XY方向”。
In addition, the
如圖1(a)、圖1(b)等所示,複數個半導體發光元件E係分別形成為平滑的大致矩形(包括長方形及正方形之角為直角的四邊形)的薄板狀之發光二極體(LED)和雷射二極體(LD)等半導體二極體。作為該半導體二極體,亦包括紅色(Red)、綠色(Green)、藍色(Blue)的芯片LED。 As shown in Fig. 1(a), Fig. 1(b), etc., a plurality of semiconductor light emitting elements E are respectively formed into thin plate-shaped light-emitting diodes that are smooth and roughly rectangular (including rectangles and squares with right-angled quadrilaterals). (LED) and laser diode (LD) and other semiconductor diodes. Red (Red), green (Green), and blue (Blue) chip LEDs are also included as the semiconductor diode.
作為複數個半導體發光元件E的具體例,主要可列舉稱為微型LED之50μm×50μm以下、詳細而言為30μm×30μm以下、進一步詳細而言為數十μm見方的LED芯片和LD芯片等。 Specific examples of the plurality of semiconductor light emitting elements E mainly include LED chips and LD chips called micro LEDs that are 50 μm×50 μm or less, specifically 30 μm×30 μm or less, and more specifically tens of μm square.
又,作為複數個半導體發光元件E的其他例,例如,亦能夠包括稱為迷你LED之100μm見方前後的LED芯片和200~300μm見方等一般的LED芯片、LD芯片等一般尺寸的半導體二極體。 In addition, as another example of the plurality of semiconductor light emitting elements E, for example, LED chips of around 100 μm square called mini-LEDs and semiconductor diodes of general size such as general LED chips and LD chips such as 200 to 300 μm square can also be included. .
在一般的芯片的處理中,複數個半導體發光元件E在包括矽等材料之元件形成用基板或晶圓上沿XY方向以既定週期排列形成,並且每一個都在其表面側或背面側具有發光部E1。排列形成之複數個半導體發光元件E經過各自分離以維持排列狀態之切割等的分斷過程、基於檢查裝置A之發光檢查過程轉移到對印刷基板等進行基板安裝之安裝步驟。 In general chip processing, a plurality of semiconductor light-emitting elements E are arranged in a predetermined period along the XY direction on an element-forming substrate or wafer including silicon and other materials, and each has a light emitting element on its front or back side. Part E1. A plurality of semiconductor light-emitting elements E formed in an array go through a cutting process such as dicing to maintain the aligned state, and a light-emitting inspection process based on the inspection device A, and then transfer to the mounting step of substrate mounting on a printed circuit board or the like.
作為本發明的特徵,複數個半導體發光元件E在分斷過程之後維持分
離排列之狀態在轉印位置P1轉印到後述暫時固定部3,在檢查空間S與暫時固定部3一同進行發光檢查之後,與暫時固定部3一同搬運到安裝位置P2而實施安裝步驟。亦即,作為複數個半導體發光元件E,使用單獨地分離排列之複數個半導體發光元件E暫時固定於後述暫時固定部3之暫時固定芯片群F。
As a feature of the present invention, the plurality of semiconductor light emitting elements E maintain separation after the breaking process.
The out-of-alignment state is transferred to the
另外,在圖示例中,為了說明,作為複數個半導體發光元件E的排列,將矩形的半導體發光元件E設定為全部相同的尺寸。又,作為其他例,雖未圖示,但除了圖示例以外亦能夠變更複數個半導體發光元件E的排列。 In addition, in the illustrated example, as an arrangement of a plurality of semiconductor light emitting elements E, all rectangular semiconductor light emitting elements E are set to have the same size for the sake of explanation. In addition, as another example, although not shown, the arrangement of the plurality of semiconductor light emitting elements E can be changed in addition to the illustrated example.
如圖1(a)、圖1(b),圖2(a)、圖2(b)、圖2(c)、圖3(a)、圖3(b)及圖4(a)、圖4(b)等所示,第一板1及第二板2包括石英或硬質合成樹脂等透明或不透明的剛性材料形成為板狀之平板。
Figure 1(a), Figure 1(b), Figure 2(a), Figure 2(b), Figure 2(c), Figure 3(a), Figure 3(b) and Figure 4(a), Figure As shown in 4(b) etc., the
在第一板1上與第二板2朝向Z方向對置之面形成有第一電極1a。在第二板2上與第一板1朝向Z方向對置之面隔著檢查空間S形成有第二電極2a。
A
第一電極1a及第二電極2a亦由與第一板1和第二板2同樣地由透明或不透明的材料積層而形成。
The
第一板1或第二板2中的任一個或第一板1及第二板2這兩個可以構成為被支撐為朝向Z方向往復移動自如,並且藉由後述驅動部7朝向Z方向相對移動。
Either one of the
第一電極1a或第二電極2a中的任一個上,為了能夠裝卸地暫時固定複數個半導體發光元件E而裝卸自如地安裝有暫時固定部3作為檢查台。
To any one of the
作為暫時固定部3的安裝機構,將保持卡盤H設置於第一板1和第二板2上為較佳,前述保持卡盤H隨著暫時固定部3與第一電極1a和第二電極2a的接觸,可裝卸且無法移動地安裝暫時固定部3。作為保持卡盤H的具體例,可列舉真空吸附卡盤、黏著卡盤、爪等具備把持機構之卡盤或該等的組合等。
As the installation mechanism of the
暫時固定部3例如由合成石英、聚對苯二甲酸乙二酯(PET)、聚丙烯(PP)、聚氯乙烯(PVC)等硬質合成樹脂、或具有與其類似之無法變形之剛性且光學上透明的絕緣性(相對介電常數為3左右)的材料,形成為其厚度薄且表背兩面平滑的平板狀。尤其,作為暫時固定部3的構成材料,使用高相對介電常數的介電材料詳細而言包含相對介電常數為80左右的氧化鈦等之透明的高介電材料為較佳。
Temporary fixing
在暫時固定部3中至少與複數個半導體發光元件E對置之表面藉由平面拋光等而平面度較高地形成,並且具有與複數個半導體發光元件E對置之暫時固定部位3a。
At least the surface facing the plurality of semiconductor light emitting elements E in the
暫時固定部位3a構成為黏著材料、低熔點蠟(熱熔膠材)、可溶解去除之接著劑等暫時固定機構形成為層狀或膜狀,以各自分離排列之狀態裝卸自如地暫時固定複數個半導體發光元件E。暫時固定部位3a的厚度以即使暫時固定作為複數個半導體發光元件E厚度小於10μm的微型LED,微型LED的表面彼此亦沒有起伏的均勻的高度之方式形成。
因此,藉由基於暫時固定部位3a的暫時固定,複數個半導體發光元件E被保持為相對於暫時固定部3無法移動。藉此,暫時固定部3和複數個半導體發光元件E成為能夠被一體化而搬運之暫時固定芯片群F。亦即,
暫時固定部3亦為藉由暫時固定部位3a以分離排列之狀態保持複數個半導體發光元件E,同時能夠從轉印位置P1經由檢查空間S向安裝位置P2搬運之元件搬運用治具。
Therefore, the plurality of semiconductor light emitting elements E are held immovably with respect to the
在暫時固定部3中具有暫時固定部位3a之表面形狀具有如圖1(a)等所示般包括暫時固定部位3a之表面整體形成為平滑面之例、如圖2(a)所示般只有暫時固定複數個半導體發光元件E之暫時固定部位3a形成為與其他部位相比部分突出之凹凸狀之其他例。
In the
暫時固定部3的表面形狀成為凹凸狀之其他例中,相鄰之凸狀的暫時固定部位3a彼此之間分別形成有凹狀部位3b。凹狀部位3b的間隔設定為成為與元件形成用基板或晶圓上以既定的週期排列形成之複數個半導體發光元件E的排列間隔對應之配置為較佳。
In another example in which the surface shape of the
亦即,複數個暫時固定部位3a的間隔以與向XY方向以既定的週期分離排列之複數個半導體發光元件E朝向Z方向對置之方式,向X方向或Y方向中的任一者或兩者設定為分別與複數個半導體發光元件E的排列間隔相等的間隔或整數倍。詳細而言,將複數個暫時固定部位3a的間隔設定為複數個半導體發光元件E的排列間隔的複數倍為較佳。藉此,能夠從向XY方向分離排列之複數個半導體發光元件E中,僅相對於配置於既定的列或既定的位置等之半導體發光元件E抵接複數個暫時固定部位3a,並藉由黏著或接著等暫時固定機構裝卸自如地暫時固定保持。
That is, the intervals between the plurality of
此外,暫時固定部3藉由暫時固定部位3a裝卸自如地暫時固定保持複數個半導體發光元件E中配置有發光部E1之表面側或背面側中的任一者為
較佳。
In addition, the
作為該種暫時固定部3的具體例,有如圖1(a)等所示般,暫時固定於在複數個半導體發光元件E中配置有發光部E1之表面側之透明發光側暫時固定部31。
As a specific example of such a
作為其他例,有如圖2(c)所示般,暫時固定於在複數個半導體發光元件E中成為與發光部E1相反的一側之背面側之透明或不透明的背面側暫時固定部32。
As another example, as shown in FIG. 2( c ), there is a transparent or opaque back side
各自分離之複數個半導體發光元件E被暫時固定部3(發光側暫時固定部31或背面側暫時固定部32)不離散地保持。能夠在該保持狀態下從暫時固定部3(發光側暫時固定部31或背面側暫時固定部32)藉由剝離等取出複數個半導體發光元件E,從而複數個半導體發光元件E的發光部E1或背面露出之同時亦能夠進行安裝。因此,能夠將在複數個半導體發光元件E中分離時的芯片的對準資訊用於後述安裝步驟。
The plurality of separated semiconductor light emitting elements E are held in a non-discrete manner by the temporary fixing part 3 (the light emitting side temporary fixing
又,暫時固定部3構成為相對於第一電極1a與第二電極2a之間所形成之檢查空間S將暫時固定部3夾入第一電極1a與第二電極2a之間,從而能夠使複數個半導體發光元件E通電。
In addition, the
第一板1的第一電極1a和第二板2的第二電極2a配置成向Z方向隔著檢查空間S而對置。發光測試時的檢查空間S的Z方向的間隔設定為與暫時固定芯片群F(複數個半導體發光元件E和時固定部3)的Z方向的間隔相同或比其稍微長。
The
第一電極1a及第二電極2a上分別電性連接有後述驅動電源4。此外,第一電極1a或第二電極2a中的任一者上,藉由安裝機構(保持卡盤H)裝卸
自如地安裝有暫時固定部3。
The
因此,在第一電極1a與第二電極2a之間的檢查空間S夾入暫時固定芯片群F(複數個半導體發光元件E和暫時固定部3),從第一電極1a及第二電極2a向複數個半導體發光元件E通電。尤其,使暫時固定部3與第一電極1a及第二電極2a電性接觸,以使沿Z方向夾在第一電極1a與第二電極2a之間之暫時固定部3成為絕緣性介電體為較佳。
Therefore, the temporarily fixed chip group F (a plurality of semiconductor light emitting elements E and the temporarily fixed part 3) is sandwiched between the inspection space S between the
藉此,複數個半導體發光元件E分別與絕緣性的暫時固定部3構成電容器而串聯連接。亦即,在第一電極1a與第二電極2a之間配置形成有單獨分離之複數個發光電路部L,該發光電路部L串聯連接包括複數個半導體發光元件E和暫時固定部3之電容器。
Thereby, a plurality of semiconductor light emitting elements E and the insulating
又,暫時固定部3藉由保持卡盤H裝卸自如地安裝於第一電極1a或第二電極2a中的任一者,因此,複數個半導體發光元件E經由暫時固定部3與第一電極1a或第二電極2a中的一者電性接觸。但是,複數個半導體發光元件E即使以與第一電極1a或第二電極2a中的另一者不接觸之方式在與複數個半導體發光元件E之間具有若干間隙,由於該間隙成為適當的絕緣體,因此能夠進行發光測試。
Moreover, the
另外,該種發光測試時,在複數個半導體發光元件E相對於暫時固定部3的暫時固定狀態下複數個半導體發光元件E的表面彼此產生些許起伏而成為不均勻的高度時,與各半導體發光元件E對應之靜電電容產生偏差,因此不佳。
In addition, during this kind of light emission test, when the surfaces of the plurality of semiconductor light emitting elements E are temporarily fixed to the
除此以外,檢查後,藉由解除基於保持卡盤H之暫時固定部3的保持,能夠從檢查空間S卸下暫時固定芯片群F(複數個半導體發光元件E和暫時固定部3)。
In addition, after the inspection, the temporarily fixed chip group F (the plurality of semiconductor light emitting elements E and the temporarily fixed part 3 ) can be detached from the inspection space S by releasing the holding of the temporarily fixed
又,如圖3(a)、圖3(b)~圖5(a)、圖5(b)所示,第一板1和第二板2亦能夠形成為使第一板1或第二板2中的任一者的面積小於另一者之面積。在此情況下,相對於第一板1或第二板2中的一者將另一者支撐為向與第一板及第二板的對置方向(Z方向)交叉之方向(XY方向)相對移動自如,或將第一板及第二板兩者支撐為向與第一板及第二板的對置方向(Z方向)交叉之方向(XY方向)相對移動自如為較佳。另外,藉由在成為移動側之第一板1的第一電極1a或第二板2的第二電極2a與複數個半導體發光元件E之間確保滑動用間隙(未圖示)而能夠順暢地相對移動。亦即,相對於第一板1或第二板2中的一者,另一者或第一板1及第二板2兩者一面沿對置方向(Z方向)維持第一板1與第二板2的間隔(滑動用間隙),一面支撐為向交差方向(XY方向)移動自如。
Again, as shown in Figure 3 (a), Figure 3 (b) ~ Figure 5 (a), Figure 5 (b), the
驅動電源4由交流電壓源和直流電壓源構成,在複數個半導體發光元件E的檢查時從驅動電源4經由第一電極1a及第二電極2a對複數個發光電路部L施加既定量的交流(AC)電壓和直流(DC)電壓。
The
當從成為驅動電源4之交流電壓源向複數個發光電路部L施加交流電壓時,由於複數個成為半導體發光元件E之半導體二極體所具有之整流作用,電流相對於複數個半導體發光元件E沿正向流動而使發光部E1發光。
When an AC voltage is applied from an AC voltage source serving as a driving
複數個半導體發光元件E的檢查結束後,將第一電極1a及第二電極2a中的施加電源設為OFF,起動靜電消除器(未圖示)為較佳。藉此,防止由於檢查結束後從第一電極1a和第二電極2a取出暫時固定芯片群F時產生之剝離帶電引起之靜電破壞。
After the inspection of the plurality of semiconductor light emitting elements E is completed, it is preferable to turn OFF the power supply to the
光學儀器5包括從第一板1(第一電極1a)或第二板2(第二電極2a)中的任一者之側觀察複數個半導體發光元件E的發光的亮度之檢查相機等。
The
亦即,將包括複數個半導體發光元件E和暫時固定部3之電容器串聯連接且單獨分離之複數個發光電路部L與光學儀器5之間所配置之第一板1(第一電極1a)或第二板2(第二電極2a)中的任一者之側由透明材料形成,另一側由不透明材料形成亦可。
That is, the first plate 1 (
作為光學儀器5的檢查相機,當複數個半導體發光元件E發光可見光時,使用可見光的CCD相機等為較佳。複數個半導體發光元件E發光紅外光時,使用紅外線相機,配置成與相對於複數個半導體發光元件E之檢查區域的視場匹配以便與既定的分辨率相稱為較佳。
As the inspection camera of the
檢查相機的配置中,使用高分辨率的固定相機51或能夠按照第一板1或第二板2的移動而移動之移動相機52,或者併用固定相機51及移動相機52。尤其,複數個半導體發光元件E以微型LED等微小尺寸排列形成複數個時,使用移動相機52為較佳。藉此,相對於複數個半導體發光元件E之檢查區域受到限制,因此即使為低分辨率的相機,亦能夠充分確保觀察分辨率。
In the arrangement of inspection cameras, a high-resolution fixed
藉由固定相機51和移動相機52等獲得之複數個半導體發光元件E的平均亮度數據能夠藉由使每檢查批次的平均亮度數據與各半導體發光元件E的位置建立對應關聯,而作為能夠製作為在後步驟中可參照之數據庫。
The average luminance data of a plurality of semiconductor light emitting elements E obtained by the fixed
詳細而言,作為基於固定相機51和移動相機52等之檢查數據,計量處於發光狀態之複數個半導體發光元件E作為1張圖像數據,並由與各半導體發光元件E的面積相當之複數個像素數據求出各半導體發光元件E的亮度平均值等,將各半導體發光元件E的發光的有無和代表發光亮度作為
定量數據,製作每檢查批次的亮度數據庫。又,藉由改變來自驅動電源4的施加電壓時的發光,能夠一併測量各半導體發光元件E的發光最低電壓和亮度偏差。
Specifically, as inspection data based on the fixed
尤其,當複數個半導體發光元件E為RGB芯片LED時,作為檢查相機,使用充分確保相對於RGB芯片LED之分辨率之彩色相機,將RGB三色的亮度成分作為各色調數據庫化為較佳。 In particular, when the plurality of semiconductor light emitting elements E are RGB chip LEDs, it is preferable to use a color camera with sufficient resolution for the RGB chip LEDs as the inspection camera, and to store the luminance components of the three colors of RGB as each hue database.
又,該等芯片發光亮度的數據庫能夠進行每個檢查批次中的複數個半導體發光元件E的位置與數據鏈接。在該情況下,在成為下一步驟之藉由芯片焊接機等之各半導體發光元件E的安裝步驟中,能夠在即將取出各半導體發光元件E之前用作對象芯片的篩選基準。 In addition, the database of these chip light emitting luminances can link the positions and data of a plurality of semiconductor light emitting elements E in each inspection lot. In this case, in the mounting step of each semiconductor light emitting element E by a die bonder or the like which becomes the next step, it can be used as a screening criterion for target chips immediately before taking out each semiconductor light emitting element E.
如圖5(a)、圖5(b)所示,為了藉由發光測試進行更準確的檢查,將本發明的實施形態之檢查裝置A設置於檢查時構成暗室D之檢查設備B,並在沒有外光進入之狀態下進行發光測試為較佳。 As shown in Figure 5(a) and Figure 5(b), in order to perform a more accurate inspection by luminous testing, the inspection device A of the embodiment of the present invention is installed in the inspection equipment B that constitutes the darkroom D during the inspection, and in the It is better to carry out the luminescence test in the state where no external light enters.
在暗室D中進行發光測試之原因係因為,小於各半導體發光元件E的發光頻率的外光進入複數個半導體發光元件E時,在各半導體發光元件E的內部電荷發生激發現象,從而難以觀察到準確的發光狀態。 The reason for carrying out the luminescence test in the dark room D is that when external light less than the luminous frequency of each semiconductor light emitting element E enters a plurality of semiconductor light emitting elements E, an excitation phenomenon occurs in the internal charges of each semiconductor light emitting element E, making it difficult to observe Accurate lighting status.
基於該種外光之激發現象反之能夠用作各半導體發光元件E中基於發光的光激發輔助之觀察方法。將發光小於複數個半導體發光元件E的發光頻率的短波長光線之光源(未圖示)設置於暗室D,從光源朝向複數個半導體發光元件E的發光部E1微量均勻地照射短波長光線為較佳。藉此,能夠降低發光所需之最低電壓。因此,即使將驅動電源4設為低電壓,亦能夠觀察各半導體發光元件E的發光。例如,針對紅色LED,能夠藉由微弱地
照射成為短波長之藍色或紫外光來實施。
Conversely, the excitation phenomenon by such external light can be used as an observation method assisted by light excitation by light emission in each semiconductor light emitting element E. A light source (not shown) that emits short-wavelength light that is lower than the light-emitting frequency of the plurality of semiconductor light-emitting elements E is installed in the dark room D, and it is relatively small to uniformly irradiate short-wavelength light from the light source toward the light-emitting portion E1 of the plurality of semiconductor light-emitting elements E. good. Thereby, the minimum voltage required for light emission can be reduced. Therefore, even if the driving
詳細而言,使包括小於各半導體發光元件E的發光頻率的短波長光之照明裝置(未圖示)的照射區域相對於在複數個半導體發光元件E中觀察發光之檢查相機的觀察視場一致為較佳。具體而言,將短波長照明裝置並設於固定相機51或並設於移動相機52。
Specifically, the irradiation area of an illuminating device (not shown) including short-wavelength light having a light emission frequency lower than that of each semiconductor light emitting element E is made to coincide with the observation field of view of an inspection camera that observes light emission from a plurality of semiconductor light emitting elements E is better. Specifically, the short-wavelength illumination device is provided in combination with the fixed
藉由該種結構,預先測量僅藉由短波長照明裝置的照射而得之相機視角內的觀察值的暗時位準,並且在檢查時,從相機觀察值中減去暗時位準而校正數據。另外,若對各半導體發光元件E的外光照度太強,則產生基於光致發光效果之光激發發光,因此預先調整短波長照明裝置的照度水準,以免產生不依賴於驅動電流之發光為較佳。 With this structure, the dark-time level of the observation value within the viewing angle of the camera obtained only by the irradiation of the short-wavelength illumination device is measured in advance, and the dark-time level is corrected by subtracting the dark-time level from the camera observation value at the time of inspection. data. In addition, if the external light to each semiconductor light-emitting element E is too strong, light-excited luminescence based on the photoluminescence effect will be generated. Therefore, it is better to adjust the illuminance level of the short-wavelength lighting device in advance to avoid luminescence that does not depend on the driving current. .
又,當判別作為複數個半導體發光元件E之RGB芯片LED的發光狀態的色調時,藉由彩色相機觀察發光狀態,用作每個RGB成分的觀察值即可。在觀察時併用短波長照明裝置時,預先測量僅藉由短波長照明裝置的照射而得之相機視角內的觀察值中的RGB成分的色調的暗時位準,檢查時,從相機觀察值中減去色調的暗時位準而校正數據為較佳。 Also, when discriminating the color tone of the light emitting state of the RGB chip LED as a plurality of semiconductor light emitting elements E, the light emitting state can be observed with a color camera and used as an observed value for each RGB component. When using a short-wavelength illumination device in combination with the short-wavelength illumination device, measure in advance the dark-time level of the color tone of the RGB component in the observation value within the camera's viewing angle obtained only by the irradiation of the short-wavelength illumination device. It is preferable to correct the data by subtracting the dark level of the hue.
第一板1的第一電極1a或第二板2的第二電極2a中的任一者或第一電極1a及第二電極2a兩者上沿著第一電極1a的表面和第二電極2a的表面設置介電層6為較佳。
Either one of the
介電層6與暫時固定部3同樣地能夠由高相對介電常數的介電材料構成。作為介電層6的具體例,使用包含相對介電常數為80左右的氧化鈦等之透明的高介電材料為較佳。
The
作為第一板1的第一電極1a和第二板2的第二電極2a中的介電層6的形
成方法,除了藉由濺射等形成硬質薄膜以外,還具有藉由將具有基於紫外線照射和加熱而產生之硬化性之液態的軟質樹脂用於基材,較薄地塗佈微粉末狀態的高比介電材料預先分散配合於液中之軟質樹脂並使其硬化而得之軟質膜的形成方法。
As the shape of the
尤其,將成為介電層6之軟質膜由硬化後亦具有柔軟性之矽樹脂等形成時,能夠期待針對複數個半導體發光元件E中的表面形狀或背面形狀、暫時固定部3的凹凸或變形之位移吸收性。藉此,針對柔軟性差的複數個半導體發光元件E的表面或背面和暫時固定部3,面接觸性亦提高,並且能夠使第一電極1a與第二電極2a之間產生之靜電容更穩定化。
In particular, when the soft film to be the
在第一板1或第二板2上設置使第一板1或第二板2中的任一者或第一板1及第二板2兩者相對移動之驅動部7為較佳。藉由驅動部7的動作,能夠將暫時固定芯片群F(複數個半導體發光元件E和暫時固定部3)可裝卸地插入第一電極1a與第二電極2a之間(檢查空間S)。
It is preferable to provide a
驅動部7由聯結第一板1或第二板2中的任一者或第一板1及第二板2兩者並藉由升降和滑動或反轉等來往復移動之致動器等構成,藉由後述控制部8來操作控制。
The
作為基於驅動部7之第一板1或第二板2的相對移動方向,不僅包括第一板1及第二板2的對置方向(Z方向),視需要還包括與對置方向(Z方向)交叉之方向(XY方向)。
The direction of relative movement of the
亦即,作為驅動部7,具有至少使第一板1或第二板2向Z方向相對移動之升降用驅動部71、使第一板1或第二板2向XY方向相對移動之水平移動用驅動部72。
That is, as the
作為基於後述控制部8之升降用驅動部71的控制例,圖1(a)等中以雙點劃線表示之暫時固定芯片群F的運入時與運出時,使第一板1和第二板2沿Z方向相對地分離移動。
As a control example based on the lifting
除此以外,在圖1(a)等中由實線表示之設置時,使第一板1與第二板2向Z方向相對接近移動。藉由該接近移動,暫時固定芯片群F能夠沿Z方向夾入第一板1的第一電極1a與第二板2的第二電極2a之間(檢查空間S)而進行通電。在圖示例中,第一電極1a及第二電極2a經由介電層6加壓,以便能夠直接接觸而通電。又,作為其他例雖未圖示,但第一電極1a及第二電極2a亦能夠不經由介電層6而與暫時固定芯片群F直接接觸並通電,能夠變更為以隔開既定間隔之方式接近將第一電極1a或第二電極2a中的任一者在暫時固定芯片群F之間並進行通電。
In addition, in the installation shown by the solid line in FIG.1(a) etc., the
圖1~圖5中示出暫時固定芯片群F(複數個半導體發光元件E和暫時固定部3)、光學儀器5、介電層6及驅動部7的具體例,圖6中示出該等的等效電路。
1 to 5 show specific examples of temporarily fixing the chip group F (a plurality of semiconductor light emitting elements E and the temporary fixing part 3), the
圖1(a)、圖1(b)、圖2(a)、圖2(b)、圖2(c)、圖3(a)、圖3(b),圖4(a)、圖4(b)及圖5(a)、圖5(b)所示之例中,在第一電極1a側形成有暫時固定部3,並藉由暫時固定部3將複數個半導體發光元件E可裝卸地載置於第一電極1a以進行暫時固定。
Figure 1(a), Figure 1(b), Figure 2(a), Figure 2(b), Figure 2(c), Figure 3(a), Figure 3(b), Figure 4(a), Figure 4 (b) and in the example shown in FIG. 5(a) and FIG. 5(b), a
圖1(a)、圖1(b)、圖2(b)、圖2(c)、圖3(a)、圖3(b)、圖4(a)、圖4(b)及圖5(a)、圖5(b)的情況下,在暫時固定部3中包括暫時固定部位3a之表面整體形成於平滑面。
Figure 1(a), Figure 1(b), Figure 2(b), Figure 2(c), Figure 3(a), Figure 3(b), Figure 4(a), Figure 4(b) and Figure 5 In the case of (a) and FIG. 5(b), the entire surface including the
相對於此,在圖2(a)的情況下,不同點在於,在暫時固定部3中具有
暫時固定部位3a之表面形狀形成為僅使暫時固定部位3a部分突出之凹凸狀。圖示例的情況下,複數個暫時固定部位3a的間隔(X方向的間距)設定為分離排列之複數個半導體發光元件E的排列間隔(X方向的間距)的二倍,從複數個半導體發光元件E中,使複數個暫時固定部位3a僅相對於配置於既定列(X方向上每隔一列)之半導體發光元件E抵接並保持為裝卸自如。
On the other hand, in the case of FIG. 2( a), the difference lies in that the
又,作為其他例雖未圖式,但亦能夠在第二電極2a側形成暫時固定部3,藉由暫時固定部3將複數個半導體發光元件E可裝卸地保持於第二電極2a並進行暫時固定,亦能夠將複數個暫時固定部位3a的間隔設定變更為圖示例以外。
Also, as another example, although not shown in the drawings, it is also possible to form a
圖1(a)、圖1(b)、圖2(a)、圖2(b)、圖3(a)、圖3(b)、圖4(a)、圖4(b)及圖5(a)、圖5(b)所示之例中,以如下方式構成:在複數個半導體發光元件E中發光部E1以朝下的方式配置,透過透明地形成之第一電極1a和第一板1等,藉由光學儀器5從第一板1側觀察發光部E1的發光狀態。
Figure 1(a), Figure 1(b), Figure 2(a), Figure 2(b), Figure 3(a), Figure 3(b), Figure 4(a), Figure 4(b) and Figure 5 (a) and the example shown in FIG. 5(b) are configured in such a way that the light-emitting portion E1 is arranged downward in a plurality of semiconductor light-emitting elements E, and the transparently formed
尤其圖1(a)、圖1(b),圖2(a)、圖2(b)、圖2(c),圖3(a)、圖3(b),圖4(a)、圖4(b)及圖5(a)、圖5(b)所示之例中,圖1(a)、圖1(b),圖2(a)、圖2(b),圖3(a)、圖3(b),圖4(a)、圖4(b)及圖5(a)、圖5(b)的情況下,不同點在於,在使暫時固定部3(發光側暫時固定部31)的暫時固定部位3a與在複數個半導體發光元件E中配置有發光部E1之表面側直接接觸。
Especially Fig. 1(a), Fig. 1(b), Fig. 2(a), Fig. 2(b), Fig. 2(c), Fig. 3(a), Fig. 3(b), Fig. 4(a), Fig. 4(b) and Fig. 5(a), Fig. 5(b) in the example shown, Fig. 1(a), Fig. 1(b), Fig. 2(a), Fig. 2(b), Fig. 3(a ), Fig. 3(b), Fig. 4(a), Fig. 4(b) and Fig. The
圖1(a)、圖1(b)、圖2(a)、圖2(b)、圖2(c)、圖3(a)、圖3(b),圖4(a)、圖4(b)及圖5(a)、圖5(b)所示之例中,構成為沿著第二電極2a的表面形成介電層6。
Figure 1(a), Figure 1(b), Figure 2(a), Figure 2(b), Figure 2(c), Figure 3(a), Figure 3(b), Figure 4(a), Figure 4 In the example shown in (b) and FIG. 5( a ), FIG. 5( b ), the
圖1(a)、圖1(b),圖2(a)、圖3(a)、圖3(b)、圖4(a)、圖4(b)及圖5(a)、圖5(b)的情況下,不同點在於,在使介電層6與複數個半導體發光元件E的背面側可通電地接觸或接近。
Figure 1(a), Figure 1(b), Figure 2(a), Figure 3(a), Figure 3(b), Figure 4(a), Figure 4(b) and Figure 5(a), Figure 5 In the case of (b), the difference is that the
圖2(b)的情況下,不同點在於,包括與暫時固定部3相同的絕緣材料之膜狀或片狀的絕緣膜體3'與複數個半導體發光元件E的背面側抵接,並藉由黏著或接著等裝卸自如地暫時固定。亦即,圖2(b)所示之複數個半導體發光元件E藉由表面側及裏面側兩者夾在暫時固定部3和絕緣膜體3'而被保持為裝卸自如。
In the case of Fig. 2(b), the difference is that the film-like or sheet-like insulating film body 3 ' made of the same insulating material as the
此外,在圖1(a)、圖1(b)、圖2(a)、圖2(b)及圖3(a)、圖3(b)所示之例中,構成為藉由驅動部7的升降用驅動部71控制第二板2朝向第一板1沿Z方向移動。
In addition, in the example shown in Fig. 1(a), Fig. 1(b), Fig. 2(a), Fig. 2(b) and Fig. 3(a), Fig. 3(b), it is configured that by The
與此相反,在圖2(c)、圖4(a)、圖4(b)、圖5(a)、圖5(b)及圖6所示之例的不同點在於,藉由驅動部7的升降用驅動部71控制第一板1朝向第二板2沿Z方向移動。
On the contrary, the difference between the examples shown in Fig. 2(c), Fig. 4(a), Fig. 4(b), Fig. 5(a), Fig. 5(b) and Fig. 6 is that the driving
圖2(c)與圖1(a)、圖1(b)、圖2(a)、圖2(b),圖3(a)、圖3(b)、圖4(a)、圖4(b)及圖5(a)、圖5(b)的不同點在於,在複數個半導體發光元件E中發光部E1朝向上方配置,透過透明的介電層6、第二電極2a、第二板2,藉由光學儀器5從第二板2側觀察發光部E1的發光狀態。
Figure 2(c) and Figure 1(a), Figure 1(b), Figure 2(a), Figure 2(b), Figure 3(a), Figure 3(b), Figure 4(a), Figure 4 The difference between (b) and Fig. 5(a) and Fig. 5(b) is that, among the plurality of semiconductor light emitting elements E, the light emitting part E1 is arranged facing upward, through the
又,作為其他例雖未圖示,但能夠變更為:在圖1(a)、圖1(b)、圖2(a)、圖2(b)及圖3(a)、圖3(b)所示之例中,藉由驅動部7的升降用驅動部71控制第一板1朝向第二板2沿Z方向移動;在圖1(a)、圖1(b)、圖2(a)、圖2(b)、圖3(a)、圖3(b)、圖4(a)、圖4(b)及圖5(a)、圖5(b)所示之例中,
藉由光學儀器5從第二板2側觀察發光部E1的發光狀態等。
Also, although not shown as another example, it can be changed to: in Fig. 1(a), Fig. 1(b), Fig. 2(a), Fig. ) in the example shown, the
除此以外,在圖3(a)、圖3(b)~圖5(a)、圖5(b)所示之例中,構成為藉由驅動部7的水平移動用驅動部72使第二板2相對於第一板1向XY方向移動。
In addition, in the example shown in FIG. 3(a), FIG. 3(b)~FIG. 5(a), and FIG. The
圖3(a),圖4(a)、圖4(b)及圖5(a)、圖5(b)的情況下,不同點在於,第二板2的面積形成為小於第一板1的面積,圖3(b)的情況下,不同點在於,使一個第二板2相對於沿XY方向並列設置之複數個第一板1向XY方向依次移動。
Fig. 3 (a), under the situation of Fig. 4 (a), Fig. 4 (b) and Fig. 5 (a), Fig. 5 (b), the difference is that the area of the
尤其,圖3(b)、圖4(a)、圖4(b)及圖5(a)、圖5(b)的情況下,在第一板1的周圍設置有包括顆粒等之支撐構件11,並將第一板1裝卸自如地支撐於支撐構件11。圖示例中,藉由設置於第一板1的支撐構件11之支撐卡盤11a,將第一板1及暫時固定芯片群F(複數個半導體發光元件E和暫時固定部3)相對於支撐構件11支撐為無法移動且裝卸自如。
In particular, in the case of Fig. 3(b), Fig. 4(a), Fig. 4(b) and Fig. 5(a), Fig. 5(b), support members including particles etc. are provided around the
藉由基於支撐卡盤11a的支撐,如圖4(a)所示,相對於形成於第一電極1a與第二電極2a之間之檢查空間S,暫時固定芯片群F與第一薄板1一同從轉印位置P1搬運(運入)到檢查空間S。此外,藉由基於支撐卡盤11a的支撐解除,暫時固定芯片群F與第一板1一同從檢查空間S搬運(運入)安裝位置P2。藉此,如圖4(b)所示,在轉印位置P1中,能夠容易實施複數個半導體發光元件E相對於暫時固定部3的暫時固定作業,並且在安裝位置P2中,能夠容易實施從暫時固定部3取出複數個半導體發光元件E的作用。
With the support by the
亦即,暫時固定部3除了發揮檢查裝置A內的檢查空間S內的檢查台的功能以外,檢查前(後述暫時固定步驟、運入步驟、設置步驟),還發揮用
於使暫時固定芯片群F(複數個半導體發光元件E和暫時固定部3)從轉印位置P1移動到檢查空間S之元件搬運用治具的功能。檢查後(後述運出步驟或安裝步驟),作為用於使暫時固定芯片群F(複數個半導體發光元件E和暫時固定部3)從檢查空間S移動到安裝位置P2之元件搬運用治具而發揮功能。
That is to say, in addition to the function of the inspection table in the inspection space S in the inspection device A, the
又,作為其他例雖未圖示,但在圖1(a),圖2(a)、圖2(b)、圖2(c)及圖3(a)所示之例中,能夠相對於第一板1藉由保持卡盤H的解除操作卸下暫時固定芯片群F(複數個半導體發光元件E和暫時固定部3),並且能夠僅將複數個半導體發光元件E及暫時固定部3變更為可搬運(運入及運出)。此外,在圖1(a)、圖2(a)、圖2(b)、圖2(c)及圖3(a)所示之例中,能夠將載置有暫時固定芯片群F之第一板1變更為可搬運之結構,或亦能夠將懸吊暫時固定芯片群F之第二板2變更為可搬運結構。
Also, although not shown as another example, in the example shown in Fig. 1(a), Fig. 2(a), Fig. 2(b), Fig. 2(c) and Fig. 3(a), it can be compared to The
圖5(a)、圖5(b)所示之例中,在檢查設備B進行檢查時構成之的暗室D收納配置第一板1及第二板2和光學儀器5,並且具備在暗室D中使第一板1的支撐構件11朝向第二板2沿Z方向升降之升降用驅動部71、及在暗室D中使第二板2相對於第一板1的支撐構件11沿XY方向移動之水平移動用驅動部72。
In the example shown in Fig. 5(a) and Fig. 5(b), the darkroom D configured when the inspection equipment B is inspected accommodates and arranges the
暗室D於檢查設備B的內部遮擋外部光並在檢查時形成,作為設置於暗室D之升降用驅動部71,使用滑動件、直線運動導軌等致動器。
The darkroom D is formed inside the inspection equipment B to block external light and is used for inspection. As the driving
作為形成於暗室D之水平移動用驅動部72,使用XY平台等致動器。
As the
在配置於暗室D之光學儀器5為固定相機51之情況下,固定配置於第一板1的中心軸的延長線上且光學焦點位置。移動相機52的情況下,配置於第二板2的中心軸的延長線上且光學焦點位置,被支撐為與第二板2藉由
水平移動用驅動部72沿XY方向的移動同步移動。
When the
又,作為其他例雖未圖示,但在成為檢查対象之複數個半導體發光元件E為LED之情況下,亦能夠具備發出波長比LED的發光頻率短的光之光源。在該情況下,追隨暗室D中的移動相機52的移動而使光源移動等,以低照度均勻地照射檢查空間S的檢查對象區域的同時進行檢查為較佳。
In addition, although not shown as another example, when the plurality of semiconductor light emitting elements E to be inspected are LEDs, a light source that emits light with a wavelength shorter than the light emission frequency of the LEDs can also be provided. In this case, it is preferable to perform the inspection while uniformly irradiating the inspection target area of the inspection space S with low illuminance, such as by moving the light source following the movement of the moving
圖6(a)所示之等效電路對應於圖1、圖2(a)、圖2(c)、圖3(a)圖3(b)、圖4(a)、圖4(b)及圖5(a)(b)所示之例,相對於串聯連接包括複數個半導體發光元件E和暫時固定部3之電容器且單獨分離之複數個發光電路部L,從第一電極1a及第二電極2a經由介電層6施加驅動電源(交流電壓源)4的交流電壓。藉由交流電壓的施加,變位電流流過複數個發光電路部L。又,對應於圖2(b)所示之例之等效電路為與圖6(a)類似之等效電路,因此省略。
The equivalent circuit shown in Figure 6(a) corresponds to Figure 1, Figure 2(a), Figure 2(c), Figure 3(a), Figure 3(b), Figure 4(a), Figure 4(b) And in the example shown in Fig. 5 (a) (b), with respect to the plurality of light emitting circuit parts L which are connected in series and include capacitors of a plurality of semiconductor light emitting elements E and
流過複數個發光電路部L內的變位電流,藉由複數個半導體發光元件(半導體二極體)E所具有之整流作用而流通正向電流。詳細而言,從驅動電源4施加到複數個發光電路部L之交流電壓由複數個半導體發光元件E進行半波整流。
The displacement current flowing in the plurality of light emitting circuit parts L flows forward current due to the rectification function of the plurality of semiconductor light emitting elements (semiconductor diodes) E. Specifically, the AC voltage applied from the
因此,僅在正向的電流流向複數個半導體發光元件E時,使複數個半導體發光元件E發光。藉由使用光學儀器5觀察該發光狀態,能夠依據複數個半導體發光元件E的發光狀態來篩選優劣。
Therefore, only when a forward current flows to the plurality of semiconductor light emitting elements E, the plurality of semiconductor light emitting elements E are made to emit light. By observing the light emitting state with the
在圖6(a)的情況下,在電路中串聯連接有半導體二極體保護用的限流電阻器RL而構成串聯RC電路。亦即,僅反向耐電壓範圍內的交流電壓被施加到複數個半導體發光元件E。藉此,利用限流電阻器RL限制過多電流流向複數個半導體發光元件E,從而防止破壞。 In the case of FIG. 6( a ), a current-limiting resistor RL for semiconductor diode protection is connected in series to the circuit to constitute a series RC circuit. That is, only an AC voltage within the range of the reverse withstand voltage is applied to the plurality of semiconductor light emitting elements E. As shown in FIG. Thereby, excessive current flow to the plurality of semiconductor light emitting elements E is restricted by the current limiting resistor RL , thereby preventing destruction.
此時,為了確保半導體發光元件E的發光所需之電流,重要的係串聯RC電路的阻抗的大小。複數個發光電路部L的阻抗依據靜電容和頻率而變化。將頻率設為ω,且將靜電容設為C時,理想的電容器的阻抗Z由下述式表示。 At this time, in order to secure the current required for the light emission of the semiconductor light emitting element E, the magnitude of the impedance of the series RC circuit is important. The impedance of the plurality of light emitting circuit units L changes depending on the capacitance and frequency. When ω is the frequency and C is the capacitance, the impedance Z of an ideal capacitor is represented by the following equation.
Z=1/jωC Z=1/jωC
亦即,阻抗Z與頻率ω和靜電容C成為反比例的關係,因此,若靜電容C增大,則阻抗Z減小,若頻率ω增大,則阻抗Z減小。但,半導體發光元件E的發光中的頻率ω的響應範圍存在極限,因此不能太高。若阻抗Z高,則驅動需要高電壓,但基於高電壓的發光測試有損壞半導體發光元件E的危險,因此增加能夠維持低電壓的較大的靜電容C為較佳。 That is, the impedance Z is inversely proportional to the frequency ω and the capacitance C. Therefore, as the capacitance C increases, the impedance Z decreases, and as the frequency ω increases, the impedance Z decreases. However, there is a limit to the response range of the frequency ω in the light emission of the semiconductor light emitting element E, so it cannot be too high. If the impedance Z is high, a high voltage is required for driving, but the light emission test based on high voltage may damage the semiconductor light emitting element E, so it is better to increase a larger electrostatic capacity C that can maintain a low voltage.
為了提高靜電容C,增加第一電極1a與第二電極2a之間的投影面積(電極面積)亦有效,但由於電極面積依賴於進行發光測試之半導體發光元件E的數量,因此進行限制。
In order to increase the capacitance C, it is also effective to increase the projected area (electrode area) between the
因此,為了提高第一電極1a與第二電極2a之間的介電常數,追加包括高相對介電常數的介電材料之介電層6。
Therefore, in order to increase the dielectric constant between the
圖6(b)所示之等效電路係以如下為目的之電路,亦即,盡可能以低電壓發光,以避免複數個半導體發光元件E在發光測試中的破壞。 The equivalent circuit shown in FIG. 6( b ) is a circuit for the purpose of emitting light with as low a voltage as possible to avoid destruction of a plurality of semiconductor light emitting elements E during the light emitting test.
從驅動電源(交流電壓源)4施加到複數個發光電路部L之正向的半波電流與圖6(a)的情況相同,但在驅動電源4中限制反向的電壓(-E2)。將作為來自驅動電源4的反向耐電壓(-E2)限制下限之電壓波形施加到複數個半導體發光元件E,從而能夠進行低電壓的發光測試。
The forward half-wave current applied from the driving power source (AC voltage source) 4 to the plurality of light emitting circuit parts L is the same as that in Fig. 6(a), but the reverse voltage (-E 2 ) is limited in the driving
在圖6(a)、圖6(b)所示之等效電路中,符號C1係基於絕緣性暫時固定
部3的靜電容,符號C2係基於各半導體發光元件E的靜電容,符號C3係基於介電層6的靜電容,符號C4係基於在經分離之複數個半導體發光元件E之間所配置之間隙(空氣層)的靜電容。
In the equivalent circuit shown in Fig. 6 (a) and Fig. 6 (b), the symbol C1 is based on the capacitance of the insulating
另外,在圖6(a)、圖6(b)的情況下,作為驅動電源(交流電壓源)4僅記載了正弦波。若為交流波形,則雖未圖示,但代替正弦波,亦可以為矩形波、三角波、梯形波等。 In addition, in the case of FIG. 6( a ) and FIG. 6( b ), only a sine wave is described as the drive power source (AC voltage source) 4 . If it is an AC waveform, although not shown, it may be a rectangular wave, a triangular wave, a trapezoidal wave, etc. instead of a sine wave.
又,為了半導體發光元件E的除電的容易性和除電管理,但只要將驅動電源4的電壓(-E2)設定為零電位,則亦能夠使用直流電壓源代替交流電壓源。
In addition, for the ease and management of static elimination of the semiconductor light emitting element E, as long as the voltage (-E 2 ) of the driving
控制部8係不僅與驅動電源4和驅動部7電性連接,而且還與暫時固定芯片群F的運入機構(未圖示)和運出機構(未圖示)等電性連接之控制器。
The
成為控制部8之控制器依據預先設定於其控制電路(未圖示)之程式,以預先設定之時序依次控制每個操作。
The controller serving as the
而且,對設定於控制部8的控制電路之程式,作為基於檢查裝置A之複數個半導體發光元件E的光學檢查方法進行說明。
Furthermore, a program set in the control circuit of the
本發明的實施形態之檢查方法作為主要的步驟包括:暫時固定步驟,將複數個半導體發光元件E以分別分離排列之狀態裝卸自如地暫時固定於暫時固定部3;設置步驟,在第一板1的第一電極1a或第二板2的第二電極2a之間配置成夾入複數個半導體發光元件E及暫時固定部3;供給步驟,從驅動電源4向複數個半導體發光元件E供給電壓;及觀察步驟,從第一板1和第二板2中的任一者的一側使用光學設備5觀察複數個半導體發光元件E的發光狀態。
The inspection method of the embodiment of the present invention includes as the main steps: a temporary fixing step of temporarily fixing a plurality of semiconductor light emitting elements E to the
此外,還包括:設置步驟之前從轉印位置P1向檢查空間S運入暫時固定芯片群F(複數個半導體發光元件E和暫時固定部3)之運入步驟,觀察步驟之後朝向安裝位置P2運出檢查已經結束之暫時固定芯片群F之運出步驟為較佳。又,觀察步驟後或運出步驟後,包括將從檢查已經結束的暫時固定芯片群F成為對象之複數個半導體發光元件E從暫時固定部3卸下而對印刷基板等進行基板安裝之安裝步驟。
In addition, it also includes the step of carrying in the temporarily fixed chip group F (a plurality of semiconductor light emitting elements E and the temporarily fixed part 3) from the transfer position P1 to the inspection space S before the installation step, and moving to the mounting position P2 after the observation step. It is preferable to carry out the step of carrying out the temporarily fixed chip group F whose inspection has been completed. In addition, after the observation step or the carry-out step, a mounting step is included in which a plurality of semiconductor light-emitting elements E targeted from the temporarily fixed chip group F that has been inspected are detached from the temporarily fixed
在暫時固定步驟中,使在轉印位置P1中單獨分離排列之複數個半導體發光元件E與成為暫時固定部3的表面之暫時固定部位3a抵接,藉由基於暫時固定部位3a之黏著或接著等進行暫時固定,分離排列之複數個半導體發光元件E在分離排列之狀態下保持為裝卸自如。
In the temporary fixing step, the plurality of semiconductor light-emitting elements E that are individually and separately arranged in the transfer position P1 are brought into contact with the
在設置步驟中,將藉由暫時固定部3從轉印位置P1運入之暫時固定芯片群F夾入到第一電極1a與第二電極2a之間的檢查空間S並使其電性連接。藉此,形成單獨分離之複數個發光電路部L,該發光電路部L串聯連接包括複數個半導體發光元件E和暫時固定部3之電容器。
In the setting step, the temporarily fixed chip group F brought in from the transfer position P1 by the
在供給步驟中,藉由將驅動電源4的電壓從第一電極1a及第二電極2a供給到複數個半導體發光元件E而向複數個發光電路部L施加交流電壓。
In the supply step, an AC voltage is applied to the plurality of light emitting circuit parts L by supplying the voltage of the driving
在觀察步驟中,藉由光學儀器5從第一板1及第一電極1a和第二板2及第二電極2a中的任一者的一側觀察隨著向複數個發光電路部L施加交流電壓而發光之複數個半導體發光元件E,從而依據複數個半導體發光元件E的發光狀態,篩選為發光良好的半導體發光元件E和發光不良的半導體發光元件E。
In the observation step, as the alternating current is applied to the plurality of light-emitting circuit parts L, it is observed from the side of any one of the
作為基於複數個半導體發光元件E中的發光狀態的篩選方法,藉由基於發光的有無來判別優劣、基於亮度偏差之篩選、色調的篩選等預定之基 準來進行為較佳。 As a screening method based on the light-emitting state of a plurality of semiconductor light-emitting elements E, there are predetermined bases such as discrimination based on the presence or absence of light emission, screening based on brightness deviation, and color tone screening. It is better to come and proceed.
在安裝步驟中,藉由暫時固定部3從檢查空間S運出到安裝位置P2之暫時固定芯片群F中、僅將藉由光學器械5的觀察篩選為發光良好之複數個半導體發光元件E藉由剝離等從暫時固定部3的暫時固定部位3a取出。藉此,能夠進行對印刷基板等利用暫時固定芯片群F的對準資訊之基板安裝。
In the mounting step, only the plurality of semiconductor light-emitting elements E that are well-lit by the observation of the
依據該種本發明的實施形態之檢查裝置A及檢查方法,在檢查空間S內分離排列之複數個半導體發光元件E和暫時固定部3裝卸自如地暫時固定於第一電極1a或第二電極2a中的任一者上。在該暫時固定狀態下將驅動電源4的交流電壓從第一電極1a及第二電極2a施加到單獨分離之複數個發光電路部L,該發光電路部L中包括絕緣性的暫時固定部3之電容器串聯連接於複數個半導體發光元件E的每一個,從而藉由複數個半導體發光元件(半導體二極體)E的整流作用,電流向正向流動。
According to the inspection device A and the inspection method according to the embodiment of the present invention, the plurality of semiconductor light emitting elements E and the
因此,在正向的電流流向複數個半導體發光元件E時,良好的半導體發光元件E發光。藉由光學儀器5觀察該種複數個半導體發光元件E的發光狀態,分別光學檢查複數個半導體發光元件E的發光狀態,從而能夠基於發光狀態篩選優劣。
Therefore, when a positive current flows to the plurality of semiconductor light emitting elements E, good semiconductor light emitting elements E emit light. The light emitting states of the plurality of semiconductor light emitting elements E are observed by the
篩選合格/不合格之後,藉由從第一電極1a或第二電極2a中的任一者卸下暫時固定部3,複數個半導體發光元件E與暫時固定部3一同在分離排列之狀態下從檢查空間S搬運到安裝位置P2並能夠進行安裝。
After the pass/fail screening, by detaching the
因此,能夠在即將安裝之前集中檢查分離之複數個半導體發光元件E並篩選發光不良的半導體發光元件E,並且藉由暫時固定部3以分離排列
之狀態搬運篩選之複數個半導體發光元件E並進行安裝。
Therefore, it is possible to collectively inspect a plurality of separated semiconductor light-emitting elements E immediately before mounting and screen out semiconductor light-emitting elements E with poor light emission, and arrange them in isolation by the
其結果,與在半切割複數個LED器件之未分離狀態下進行發光測試之習知者相比,暫時固定部3除了作為複數個半導體發光元件E的檢查台發揮功能以外還作為元件搬運用治具發揮功能,因此將經檢查之複數個半導體發光元件E搬運到安裝位置P2之後,從暫時固定部3取出而能夠在即將安裝之前分離複數個半導體發光元件E。
As a result, compared with the prior art that performs a light-emitting test in an unseparated state of half-cutting a plurality of LED devices, the
藉此,無需在安裝前分離經檢查之複數個半導體發光元件E,防止在該分離步驟分割之半導體發光元件E的散逸,將複數個半導體發光元件E以所期望的個數單位進行管理和步驟間的搬運,能夠均勻地管理相對於元件搬運前後的暫時固定部3的暫時固定(暫時固定步驟)和從暫時固定部3的取出(安裝步驟)時的元件訪問高度,可靠性優異且易於處理。 Thereby, it is unnecessary to separate the inspected plurality of semiconductor light-emitting elements E before mounting, prevent the dissipation of the semiconductor light-emitting elements E divided in the separation step, and manage and process the plurality of semiconductor light-emitting elements E in units of desired numbers. It is possible to uniformly manage the access height of the temporary fixing part 3 (temporary fixing step) and removal from the temporary fixing part 3 (mounting step) before and after the component transportation, which is excellent in reliability and easy to handle. .
尤其,即使複數個半導體發光元件E係微型LED亦能夠容易進行安裝之操作性優異,可提高便利性。藉此,能夠防止安裝功能(光學)不良的半導體發光元件E於未然,從而可提高產量。 In particular, even a plurality of semiconductor light-emitting elements E-based micro LEDs can be easily mounted and are excellent in operability, and convenience can be improved. Thereby, it is possible to prevent semiconductor light-emitting elements E with defective functions (optics) from being mounted in advance, and to improve yield.
尤其,使暫時固定部3與第一電極1a及第二電極2a電性接觸,以使夾在第一電極1a與第二電極2a之間之暫時固定部3成為介電體。
In particular, the
在該情況下,驅動電源4的交流電壓從第一電極1a及第二電極2a經由暫時固定部3施加到複數個發光電路部L,藉此,在第一電極1a與第二電極2a之間暫時固定部3成為介電體而形成電容器。
In this case, the AC voltage of the driving
因此,在正向的電流流向複數個半導體發光元件E時,良好的半導體發光元件E發光。 Therefore, when a positive current flows to the plurality of semiconductor light emitting elements E, good semiconductor light emitting elements E emit light.
因此,僅藉由在第一電極1a與第二電極2a之間可通電地夾入暫時固
定部3能夠實施複數個半導體發光元件E的發光檢查。
Therefore, only by sandwiching the temporary solid state energically between the
其結果,無需將暫時固定部3設為始終與第一電極1a或第二電極2a中的任一者接觸,能夠實現整個結構的簡化,並且能夠容易實施複數個半導體發光元件E相對於暫時固定部3的暫時固定作業及取出作業。
As a result, it is not necessary to make the
又,暫時固定部3包括高相對介電常數的材料時,因高相對介電常數的暫時固定部3,第一電極1a與第二電極2a之間的靜電電容增加。靜電容與阻抗成為反比例的關係,因此第一電極1a與第二電極2a之間的阻抗變小,電流變得容易流動。
Also, when the
因此,能夠使複數個半導體發光元件E以低電壓發光。 Therefore, a plurality of semiconductor light emitting elements E can be made to emit light at a low voltage.
其結果,能夠防止由於高電壓而導致之半導體發光元件E的不得已的破壞之同時能夠降低短路(short)的危險性。藉此,還能夠實現裝置側的耐電壓和洩漏對策。 As a result, it is possible to reduce the risk of a short circuit (short) while preventing unavoidable destruction of the semiconductor light emitting element E due to high voltage. Thereby, withstand voltage and leakage countermeasures on the device side can also be realized.
此外,如圖2(a)所示,暫時固定部3的表面具有配置成複數個半導體發光元件E的排列間隔的整數倍之複數個暫時固定部位3a為較佳。
In addition, as shown in FIG. 2( a ), it is preferable that the surface of the
該種情況下,相對於以既定的週期分離排列之複數個半導體發光元件E,能夠將沿Z方向對置之暫時固定部3的複數個暫時固定部位3a的間隔設定成複數個半導體發光元件E的排列間隔的複數倍。
In this case, with respect to the plurality of semiconductor light emitting elements E spaced apart and arranged at a predetermined period, the interval between the plurality of
藉此,從分離排列之複數個半導體發光元件E中,僅在配置於既定的列或既定的位置等之半導體發光元件E抵接複數個暫時固定部位3a並裝卸自如地暫時固定。
Thereby, among the plurality of semiconductor light emitting elements E arranged separately, only the semiconductor light emitting elements E arranged in a predetermined row or a predetermined position abut against the plurality of
因此,能夠從分離排列之複數個半導體發光元件E中選擇特定的半導體發光元件E拆裝(暫時固定及取出)於暫時固定部3。
Therefore, it is possible to select and detach (temporarily fix and take out) a specific semiconductor light emitting element E from among the plurality of semiconductor light emitting elements E arranged in isolation from the
其結果,在安裝複數個半導體發光元件E前,能夠僅選擇成為安裝對象之半導體發光元件E進行檢查,從而作業性優異。 As a result, before mounting a plurality of semiconductor light emitting elements E, only the semiconductor light emitting element E to be mounted can be selected and inspected, resulting in excellent workability.
又,具備設置於第一電極1a或第二電極2a中的任一者的表面或兩者的表面上之介電層6,介電層6包括高相對介電常數的材料為較佳。
Moreover, it is provided with a
在該情況下,驅動電源4的交流電壓從第一電極1a及第二電極2a經由介電層6施加到複數個發光電路部L,藉此,在高相對介電常數的介電層6中,第一電極1a與第二電極2a之間的靜電容增加。
In this case, the AC voltage of the driving
靜電容與阻抗成為反比例的關係,因此第一電極1a與第二電極2a之間的阻抗變小,電流變得容易流動。
Since capacitance and impedance are in an inversely proportional relationship, the impedance between the
因此,能夠使複數個半導體發光元件E以低電壓發光。 Therefore, a plurality of semiconductor light emitting elements E can be made to emit light at a low voltage.
其結果,能夠防止由於高電壓而導致之半導體發光元件E的不得已的破壞之同時能夠降低短路(short)的危險性。藉此,還能夠實現裝置側的耐電壓和洩漏對策。 As a result, it is possible to reduce the risk of a short circuit (short) while preventing unavoidable destruction of the semiconductor light emitting element E due to high voltage. Thereby, withstand voltage and leakage countermeasures on the device side can also be realized.
此外,如圖3(a)、圖4(a)及圖5(a)、圖5(b)所示,形成為第一板1或第二板2中的一者的面積比另一者的面積小,相對於第一板1或第二板2中的一者,將另一者支撐為向與第一板1及第二板2的對置方向(Z方向)交叉之方向(XY方向)相對移動自如為較佳。
In addition, as shown in Fig. 3(a), Fig. 4(a) and Fig. 5(a), Fig. 5(b), the area of one of the
在該情況下,在第一電極1a與第二電極2a之間,複數個發光電路部L形成為與第一板1或第二板2中相對於較大的一者(第一板1)之較小的一者(第二板2)的接觸面積相同的尺寸。
In this case, between the
使較小的一者(第二板2)相對於較大的一者(第一板1)向與兩者的對置
方向(Z方向)交叉之方向(XY方向)以維持第一板1與第二板2的間隔的方式移動,並且從驅動電源4向複數個發光電路部L施加交流電壓。藉此,較大的一者(第一板1)的整個區域被分割成複數個,能夠以分割區域單位來檢查複數個半導體發光元件E的發光狀態。
Orient the smaller one (second plate 2) to the opposite of the larger one (first plate 1)
The direction (XY direction) intersecting the direction (Z direction) moves so as to maintain the distance between the
因此,能夠對分離排列於暫時固定部3之複數個半導體發光元件E按每個適當數量的分割區域進行檢查。
Therefore, it is possible to inspect the plurality of semiconductor light emitting elements E spaced apart and arranged in the
其結果,在檢查排列有複數個半導體發光元件E之大型的暫時固定芯片群F時為有效。 As a result, it is effective when inspecting a large temporarily fixed chip group F in which a plurality of semiconductor light emitting elements E are arranged.
又,在檢查設備B形成遮擋外光之暗室D為較佳。 In addition, it is preferable to form a dark room D that blocks external light in the inspection facility B.
在該情況下,在暗室D中進行複數個半導體發光元件E的發光測試,藉此小於各半導體發光元件E的發光頻率的外光被遮擋,從而可以在不會對各半導體發光元件E的內部電荷產生激發現象之狀態下進行發光測試。 In this case, the light emission test of a plurality of semiconductor light emitting elements E is carried out in the dark room D, whereby the external light lower than the light emission frequency of each semiconductor light emitting element E is blocked, so that the inside of each semiconductor light emitting element E can not be affected. The luminescence test is carried out in the state where the charge is excited.
因此,能夠觀察相對於驅動電源4的複數個半導體發光元件E的準確的發光。
Therefore, accurate light emission of the plurality of semiconductor light emitting elements E with respect to the
其結果,能夠更準確地篩選發光不良的半導體發光元件E,從而能夠實現可靠性的進一步提高。 As a result, semiconductor light-emitting elements E with poor light emission can be more accurately screened, and reliability can be further improved.
尤其,在暗室D具備使波長小於複數個半導體發光元件E的發光頻率的短波長光線發光之光源,從光源朝向複數個半導體發光元件E的發光部E1均勻地照射短波長光線為較佳。 In particular, it is preferable to equip the darkroom D with a light source that emits short-wavelength light having a wavelength lower than the light-emitting frequency of the plurality of semiconductor light-emitting elements E, and to uniformly irradiate the short-wavelength light from the light source toward the light-emitting portion E1 of the plurality of semiconductor light-emitting elements E.
該情況下,形成暗室D時一面從預先設置之光源均等地照射短波長光線一面進行檢查,從而能夠降低複數個半導體發光元件E的發光部E1發光 所需之最低電壓。 In this case, when the darkroom D is formed, inspection is performed while uniformly irradiating short-wavelength light from a pre-installed light source, so that light emission from the light-emitting part E1 of the plurality of semiconductor light-emitting elements E can be reduced. minimum voltage required.
因此,即使將驅動電源4設為低電壓,亦能夠觀察複數個半導體發光元件E的發光。
Therefore, even if the driving
其結果,藉由低電壓化能夠進一步防止複數個半導體發光元件E的破壞。 As a result, the destruction of the plurality of semiconductor light emitting elements E can be further prevented by lowering the voltage.
另外,在前述實施形態中,對藉由形成於第一電極1a之暫時固定部3,將複數個半導體發光元件E可裝卸地載置於第一電極1a並進行暫時固定之情況進行了說明,但並不限定於此,亦可以在第二電極2a上形成暫時固定部3,並將複數個半導體發光元件E可裝卸地懸吊在第二電極2a並進行暫時固定。
In addition, in the foregoing embodiment, the case where a plurality of semiconductor light emitting elements E are detachably mounted on the
此外,僅說明了在第一電極1a和第二電極2a上設置有介電層6之情況,但並不限定於此,亦可以不存在介電層6。為了代替介電層6而確保絕緣性,能夠在暫時固定芯片群F與第一電極1a和第二電極2a之間夾入空氣層而使其不接觸。
In addition, although the case where the
又,在圖3(a)、圖4(a)及圖5(a)、圖5(b)所示之例中,將第二板2的面積形成為小於第一板1的面積,使第二板2相對於第一板1藉由水平移動用驅動部72沿XY方向移動,但並不限定於此,可以將第一板1的面積形成為小於第二板2的面積,使第一板1相對於第二板2藉由水平移動用驅動部72沿XY方向移動,亦可以使第一板1及第二板2這兩者藉由水平移動用驅動部72沿XY方向相對移動。
Again, in the example shown in Fig. 3 (a), Fig. 4 (a) and Fig. 5 (a), Fig. 5 (b), the area of the
1:第一板 1: first board
1a:第一電極 1a: first electrode
2:第二板 2: Second board
2a:第二電極 2a: Second electrode
3(31):暫時固定部 3(31):Temporarily fixed part
3a:暫時固定部位 3a: Temporary fixed position
4:驅動電源 4: Drive power
5:光學儀器 5: Optical instruments
6:介電層 6: Dielectric layer
7(71):驅動部 7(71): Drive Department
8:控制部 8: Control Department
A:檢查裝置 A: Check device
E:半導體發光元件 E: Semiconductor light emitting element
E1:發光部 E1: Luminous Department
H:保持卡盤 H: Hold Chuck
F:暫時固定芯片群 F: Temporarily fixed chipset
L:發光電路部 L: Lighting Circuit Department
S:檢查空間 S: check space
Claims (8)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018-248085 | 2018-12-28 | ||
JP2018248085 | 2018-12-28 | ||
JP2019176953A JP6650547B1 (en) | 2018-12-28 | 2019-09-27 | Inspection device and inspection method |
JP2019-176953 | 2019-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202043753A TW202043753A (en) | 2020-12-01 |
TWI795618B true TWI795618B (en) | 2023-03-11 |
Family
ID=69568287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108145947A TWI795618B (en) | 2018-12-28 | 2019-12-16 | Inspection device and inspection method |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6650547B1 (en) |
KR (1) | KR102529649B1 (en) |
TW (1) | TWI795618B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024053198A1 (en) * | 2022-09-06 | 2024-03-14 | 株式会社ジャパンディスプレイ | Method for inspecting luminescent elements |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011095116A (en) * | 2009-10-30 | 2011-05-12 | Nec Saitama Ltd | Lighting inspection apparatus, method and program |
JP2017504956A (en) * | 2013-11-21 | 2017-02-09 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | Method for detecting optical properties of optoelectronic semiconductor materials and apparatus for carrying out the method |
TW201721913A (en) * | 2015-12-04 | 2017-06-16 | 晶元光電股份有限公司 | Light-emitting device |
JP2018506166A (en) * | 2015-08-18 | 2018-03-01 | ゴルテック.インク | Pre-exclusion method, manufacturing method, apparatus and electronic apparatus for micro light-emitting diode |
JP2018515942A (en) * | 2015-10-20 | 2018-06-14 | ゴルテック インコーポレイテッド | Micro light-emitting diode transport method, manufacturing method, apparatus, and electronic apparatus |
US20180259570A1 (en) * | 2017-01-23 | 2018-09-13 | Tesoro Scientific, Inc. | Light emitting diode (led) test apparatus and method of manufacture |
TW201836120A (en) * | 2017-03-21 | 2018-10-01 | 晶元光電股份有限公司 | Light-emitting device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101067142B1 (en) * | 2009-08-31 | 2011-09-22 | 삼성전기주식회사 | Module for Controlling The Light Emitting Device Current for Selective Feedback, Apparatus and Method for Driving The Light Emitting Device Using it |
CN110337712B (en) | 2016-12-16 | 2023-11-07 | 苹果公司 | Light Emitting Diode (LED) testing apparatus and method of manufacture |
TW201917811A (en) * | 2017-06-26 | 2019-05-01 | 美商特索羅科學有限公司 | Light emitting diode (LED) mass-transfer apparatus and method of manufacture |
-
2019
- 2019-09-27 JP JP2019176953A patent/JP6650547B1/en active Active
- 2019-12-16 TW TW108145947A patent/TWI795618B/en active
- 2019-12-26 KR KR1020190175383A patent/KR102529649B1/en active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011095116A (en) * | 2009-10-30 | 2011-05-12 | Nec Saitama Ltd | Lighting inspection apparatus, method and program |
JP2017504956A (en) * | 2013-11-21 | 2017-02-09 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | Method for detecting optical properties of optoelectronic semiconductor materials and apparatus for carrying out the method |
JP2018506166A (en) * | 2015-08-18 | 2018-03-01 | ゴルテック.インク | Pre-exclusion method, manufacturing method, apparatus and electronic apparatus for micro light-emitting diode |
JP2018515942A (en) * | 2015-10-20 | 2018-06-14 | ゴルテック インコーポレイテッド | Micro light-emitting diode transport method, manufacturing method, apparatus, and electronic apparatus |
TW201721913A (en) * | 2015-12-04 | 2017-06-16 | 晶元光電股份有限公司 | Light-emitting device |
US20180259570A1 (en) * | 2017-01-23 | 2018-09-13 | Tesoro Scientific, Inc. | Light emitting diode (led) test apparatus and method of manufacture |
TW201836120A (en) * | 2017-03-21 | 2018-10-01 | 晶元光電股份有限公司 | Light-emitting device |
Also Published As
Publication number | Publication date |
---|---|
JP2020109392A (en) | 2020-07-16 |
KR20200083298A (en) | 2020-07-08 |
TW202043753A (en) | 2020-12-01 |
JP6650547B1 (en) | 2020-02-19 |
KR102529649B1 (en) | 2023-05-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10714369B2 (en) | Micro device transferring method and micro device transferring apparatus | |
CN107833526B (en) | Pick-up-removal system and repair method of light emitting display | |
JP7232193B2 (en) | Light-emitting diode (LED) inspection device and manufacturing method | |
EP3223305B1 (en) | Intermediate structure for transfer of semiconductor micro-devices, method for preparing semiconductor micro-devices for transfer and processing array of semiconductor micro-devices | |
US10989755B2 (en) | Light emitting diode (LED) test apparatus and method of manufacture | |
JP2020506541A (en) | Light emitting diode (LED) inspection apparatus and manufacturing method | |
CN116047871A (en) | Maskless parallel pick-and-place transfer printing for microdevices | |
EP3770963A1 (en) | Display module having led packages and manufacturing method thereof | |
TWI819130B (en) | Inspection equipment and inspection methods | |
TWI795618B (en) | Inspection device and inspection method | |
WO2022221628A1 (en) | System and method for probing and sorting led chips | |
KR20140012339A (en) | Display panel inspection apparatus | |
US10362642B2 (en) | Light emitting device and light illuminating apparatus comprising the light emitting device | |
EP2541631A2 (en) | Light emitting diode and method for manufacturing same | |
KR20230068578A (en) | Micro LED Inspection Device for Performing Photoluminescence Inspection and Automatic Optical Inspection Simultaneously | |
CN213545797U (en) | Micro light-emitting diode joint evaluation device | |
US11876081B2 (en) | Electronic device and manufacturing method thereof | |
KR102047414B1 (en) | Apparatus for inspecting glass | |
WO2022185686A1 (en) | Transfer system, transfer position determination device, and transfer method |