TWI795012B - Substrate structure having thick conductive layer and method for etching the same - Google Patents

Abstract

Disclosed is a substrate structure having a thick conductive layer and a method for etching the same. The method for etching a substrate structure having a thick conductive layer includes the following steps: providing an insulated conductive substrate structure having a thermally-insulating layer, a conductive layer, and a non-photosensitive mask layer; removing a portion of the non-photosensitive mask layer and a portion of the conductive layer underneath by a mechanical process to form at least one conductive groove to expose the conductive layer, and the conductive groove and the conductive layer being formed to have a predetermined thickness ratio; etching a reserved portion of the conductive layer defined by a bottom wall of the conductive groove to the bottom surface of the conductive layer, and then removing a remaining portion of the non-photosensitive mask layer, so as to finally obtain a substrate structure having a patterned thick conductive layer.

Description

Etching forming method of substrate structure with thick conductive layer, and substrate structure with thick conductive layer

The invention relates to a substrate structure, in particular to an etching forming method for a substrate structure with a thick conductive layer, and a substrate structure with a thick conductive layer.

At present, the formation of circuit patterns for metal processing is usually done by etching. However, etching a thick metal to form a circuit pattern will consume a large amount of chemical liquid, and machining a thick metal to form a circuit pattern will easily cause damage to the substrate.

In view of this, the inventor has been engaged in the development and design of related products for many years, and felt that the above-mentioned defects can be improved, so he devoted himself to research and combined with the application of theories, and finally proposed an invention with a reasonable design and effective improvement of the above-mentioned defects.

The technical problem to be solved by the present invention is to provide an etching forming method for a substrate structure with a thick conductive layer and a substrate structure with a thick conductive layer to address the shortcomings of the prior art.

In order to solve the above-mentioned technical problems, the present invention provides a method for etching and forming a substrate structure with a thick conductive layer, including: (a) providing a conductive and insulating substrate structure, and the conductive and insulating substrate structure has an insulating and thermally conductive layer, a conductive layer formed on the insulating heat-conducting layer, and a non-photosensitive polymer masking layer covering the conductive layer; (b) removing the local non-photosensitive layer by mechanical processing The conductive polymer shielding layer and its lower part layer to form at least one conductive groove exposing the conductive layer, and to form a predetermined thickness ratio between the thickness of the conductive groove and the thickness of the conductive layer, so that the conductive and insulating substrate structure is formed as a Pretreated substrate structure; (c) remove the reserved conductive layer from the bottom wall of the conductive groove to the bottom surface of the conductive layer by etching, and then remove the remaining non-photosensitive Permanent polymer masking layer, so as to obtain the final substrate structure with a patterned thick conductive layer.

In a preferred embodiment, the non-photosensitive polymer shielding layer is made of at least one of epoxy resin, acrylic resin, polyurethane (PU) resin, and polyimide (PI) resin.

In a preferred embodiment, the insulating and heat-conducting layer is made of a composite material mixed with polymer materials and heat-conducting powder particles.

In a preferred embodiment, in step (b), it further includes forming a predetermined width ratio between the width of the groove opening of the conductive groove and the width of the groove bottom wall of the conductive groove, and the predetermined width The ratio is between 0.8:1 and 1:1.

In a preferred embodiment, the thickness of the conductive layer is between 0.5 mm and 6 mm.

In a preferred embodiment, when the thickness of the conductive layer is between 0.5 and 1 mm, the predetermined thickness ratio between the thickness of the conductive groove and the thickness of the conductive layer is between 0.6:1 and 0.99:1 between.

In a preferred embodiment, when the thickness of the conductive layer is between 1 mm and 3 mm, the predetermined thickness ratio between the thickness of the conductive groove and the thickness of the conductive layer is between 0.8:1 and 0.99:1 between.

In a preferred embodiment, when the thickness of the conductive layer is between 3 mm and 6 mm, the predetermined thickness ratio between the thickness of the conductive groove and the thickness of the conductive layer is between 0.9:1 and 0.99:1 between.

In order to solve the above-mentioned technical problems, the present invention further provides a The substrate structure includes: an insulating heat conducting layer, a conductive layer formed on the insulating heat conducting layer, and a non-photosensitive polymer shielding layer covering the conducting layer; wherein, the conducting forming at least one conductive groove exposing the conductive layer, and the conductive groove is formed by removing part of the non-photosensitive polymer shielding layer and the lower part of the conductive layer by mechanical processing, And the thickness of the conductive groove forms a predetermined thickness ratio with the thickness of the conductive layer.

In a preferred embodiment, the conductive groove is a metal conductive groove formed by removing part of the non-photosensitive polymer masking layer and the lower part of the conductive layer by milling.

In a preferred embodiment, the conductive groove is a metal conductive groove formed by removing part of the non-photosensitive polymer shielding layer and the lower part of the conductive layer by turning.

In a preferred embodiment, the conductive groove is a metal conductive groove formed by removing part of the non-photosensitive polymer masking layer and the lower part of the conductive layer by electro-firing machining.

In a preferred embodiment, a metal heat-conducting layer is further formed under the insulating heat-conducting layer.

In a preferred embodiment, a three-dimensional heat dissipation structure is formed inside the metal heat conducting layer, and the three-dimensional heat dissipation structure has a water cooling channel.

In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings related to the present invention. However, the provided drawings are only for reference and description, and are not intended to limit the present invention.

700: conductive and insulating substrate structure

800: Substrate structure of pretreatment

900: Substrate structure with patterned thick conductive layer

10: Insulation and heat conduction layer

20: Conductive layer

201: Bottom

21: Conductive groove

211: slot opening

212: tank bottom wall

30: non-photosensitive polymer shielding layer

40: Metal heat conduction layer

401: three-dimensional cooling structure

4011: water cooling channel

T, T1, T2: Thickness

W, W1: width

FIG. 1 is a schematic side view of a substrate structure according to an embodiment of the present invention.

FIG. 2 is a schematic side view of a substrate structure according to an embodiment of the present invention.

FIG. 3 is a schematic side view of a substrate structure according to an embodiment of the present invention.

FIG. 4 is a schematic side view of a substrate structure according to an embodiment of the present invention.

The following are specific examples to illustrate the implementation methods disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only for simple illustration, and are not drawn according to the actual size, which is stated in advance. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention. In addition, the term "or" used herein may include any one or a combination of more of the associated listed items depending on the actual situation.

Referring to FIG. 1 to FIG. 3 , an embodiment of the present invention provides a method for etching and forming a substrate structure with a thick conductive layer, which mainly includes the following steps.

As shown in Figure 1, first, (a) provide a conductive and insulating substrate structure 700, the conductive and insulating substrate structure 700 has an insulating and heat-conducting layer 10, a conductive and insulating layer 10 formed on the insulating and heat-conducting layer 10 layer 20 , and a non-photosensitive polymer masking layer 30 covering the conductive layer 20 .

Furthermore, the insulating and heat-conducting layer 10 is made of a composite material mixed with polymer materials and heat-conducting powders (eg, ceramic powders) to achieve insulation and heat-conducting effects. Moreover, the conductive layer 20 is a thick conductive layer made of metal with a predetermined thickness. In a preferred embodiment, the thickness T of the conductive layer 20 is between 0.5 mm and 6 mm.

It is worth mentioning that the shielding layer used to shield the conductive layer 20 in this embodiment is It is made of non-photosensitive polymer material, that is to say, it is made of polymer material that cannot be photoimaged. In a preferred embodiment, the non-photosensitive polymer shielding layer 30 may be made of at least one of epoxy resin, acrylic resin, polyurethane (PU) resin, and polyimide (PI) resin.

Next, as shown in FIG. 2 , (b) remove part of the non-photosensitive polymer shielding layer 30 and the lower portion of the conductive layer 20 in a mechanical process to form at least one exposed conductive layer 20 Conductive groove 21, and make the thickness T1 of described conductive groove 21 and the thickness T of described conductive layer 20 form a predetermined thickness ratio (T1:T), that is to make the metal thickness (depth) and conductive The thickness T of the layer 20 is relevant so that the electrically conductive and insulating substrate structure 700 shown in FIG. 1 is formed into the preprocessed substrate structure 800 shown in FIG. 2 , ie, a pre-product.

In a preferred embodiment, part of the non-photosensitive polymer masking layer 30 and the lower part of the conductive layer 20 are removed by milling to form at least one conductive groove exposing the conductive layer 20 twenty one.

In a preferred embodiment, part of the non-photosensitive polymer masking layer 30 and the lower part of the conductive layer 20 are removed by turning to form at least one conductive groove exposing the conductive layer 20 twenty one.

In a preferred embodiment, part of the non-photosensitive polymer masking layer 30 and the lower part of the conductive layer 20 are removed by electro-firing to form at least one conductive recess exposing the conductive layer 20. Slot 21.

In addition, the width W of the groove opening 211 of the conductive groove 21 and the width W1 of the groove bottom wall 212 of the conductive groove 21 form a predetermined width ratio (W: W1), and the predetermined width ratio is between Between 0.8:1 and 1:1.

Finally, as shown in FIG. 3, (c) remove the reserved conductive layer defined by the groove bottom wall 212 of the conductive groove 21 shown in FIG. 2 to the bottom surface 201 of the conductive layer 20 by etching, that is, the The conductive layer reserved directly under the groove bottom wall 212 of the conductive groove 21, and then the remaining non-photosensitive polymer masking layer 30 shown in FIG. 2 is removed, so as to obtain the final substrate structure with a patterned thick conductive layer 900.

Furthermore, in order to remove the reserved conductive layer formed from the groove bottom wall 212 of the conductive groove 21 to the bottom surface 201 of the conductive layer 20 by etching, it is necessary to make the thickness T2 of the aforementioned reserved conductive layer equal to The thickness T of the conductive layer 20 is formed with another predetermined thickness ratio ( T2 : T ), and the other predetermined thickness ratio is between 0.01:1 and 0.1:1.

In addition, when the thickness T of the conductive layer 20 is between 0.5mm and 1mm, the thickness T1 of the conductive groove 21 and the thickness T of the conductive layer 20 form a predetermined thickness ratio (T1:T ) is between 0.6:1 and 0.99:1.

Moreover, when the thickness T of the conductive layer 20 is between 1 mm and 3 mm, the predetermined thickness ratio (T1:T) formed between the thickness T1 of the conductive groove 21 and the thickness T of the conductive layer 20 is between Between 0.8:1 and 0.99:1.

Finally, when the thickness T of the conductive layer 20 is between 3 mm and 6 mm, the predetermined thickness ratio (T1:T) formed between the thickness T1 of the conductive groove 21 and the thickness T of the conductive layer 20 is between Between 0.9:1 and 0.99:1.

In addition, in a preferred embodiment, as shown in FIG. 4 , a metal heat-conducting layer 40 may be further formed under the insulating heat-conducting layer 10 . Moreover, a three-dimensional heat dissipation structure 401 may be formed inside the metal heat conducting layer 40, which may be formed by a sheet-like fin structure, or may be formed by a pin-fin type structure. , and not limited to the above. Moreover, the three-dimensional heat dissipation structure 401 of the metal heat conduction layer 40 may further be formed with a water cooling channel 4011 to form a working fluid circulation path.

Moreover, according to the above, embodiments of the present invention also provide a substrate structure with a thick conductive layer, such as the pretreated substrate structure 800 shown in FIG. 2 , which has an insulating An insulating heat conducting layer 10 , a conductive layer 20 formed on the insulating heat conducting layer 10 , and a non-photosensitive polymer shielding layer 30 covering the conducting layer 20 . Wherein, the conductive layer 20 forms at least one conductive groove 21 exposing the conductive layer 20, and the conductive groove 21 removes the partial non-photosensitive polymer shielding layer 30 and its The lower portion of the conductive layer 20 is formed, and the thickness T1 of the conductive groove 21 and the thickness T of the conductive layer 20 form a predetermined thickness ratio.

In a preferred embodiment, the conductive groove 21 is a metal conductive groove formed by removing part of the non-photosensitive polymer shielding layer 30 and the lower part of the conductive layer 20 by milling. .

In a preferred embodiment, the conductive groove 21 is a metal conductive groove formed by removing part of the non-photosensitive polymer shielding layer 30 and the lower portion of the conductive layer 20 by turning. .

In a preferred embodiment, the conductive groove 21 is a metal conductive concave formed by removing part of the non-photosensitive polymer shielding layer 30 and the lower part of the conductive layer 20 by electro-firing machining. groove.

In a preferred embodiment, the width W of the groove opening 211 of the conductive groove 21 and the width of the groove bottom wall 212 of the conductive groove 21 form a predetermined width ratio, and the predetermined width ratio is between 0.8 :1 to 1:1.

In a preferred embodiment, the thickness T2 of the reserved conductive layer and the thickness T of the conductive layer 20 form another predetermined thickness ratio, and the other predetermined thickness ratio is between 0.01:1 to 0.1: between 1.

In a preferred embodiment, the thickness T of the conductive layer 20 is between 0.5 mm and 6 mm. Moreover, when the thickness T of the conductive layer 20 is between 0.5 mm and 1 mm, the predetermined thickness ratio formed between the thickness T1 of the conductive groove 21 and the thickness T of the conductive layer 20 is between 0.6:1 to 1 mm. 0.99:1 between. When the thickness T of the conductive layer 20 is between 1 mm and 3 mm, the predetermined thickness ratio formed between the thickness T1 of the conductive groove 21 and the thickness T of the conductive layer 20 is between 0.8:1 and 0.99:1. between. When the thickness T of the conductive layer 20 is between 3 mm and 6 mm, the predetermined thickness ratio formed between the thickness T1 of the conductive groove 21 and the thickness T of the conductive layer 20 is between 0.9:1 and 0.99:1. between.

In a preferred embodiment, a metal heat-conducting layer 40 may be further formed under the insulating heat-conducting layer 10 .

Based on the above, the etching forming method of a substrate structure with a thick conductive layer provided by the present invention can be achieved by "providing a conductive and insulating substrate structure, and the conductive and insulating substrate structure has an insulating and heat-conducting layer, an A conductive layer formed on the insulating and heat-conducting layer, and a non-photosensitive polymer shielding layer covering the conductive layer", "removing part of the non-photosensitive polymer shield by mechanical processing layer and the lower part of the conductive layer to form at least one conductive groove exposing the conductive layer, and make the thickness of the conductive groove and the thickness of the conductive layer form a predetermined thickness ratio, so that the The conductive and insulating substrate structure is formed as a pretreated substrate structure", "removing the conductive layer from the bottom wall of the conductive groove to the bottom surface of the conductive layer by etching, and then Removing the remaining non-photosensitive polymer masking layer to obtain the final substrate structure with a patterned thick conductive layer" technical solution, so that the conductive layer with a predetermined thickness can be pre-formed with conductive grooves by machining , and make the thickness of the conductive groove formed by machining and the thickness of the conductive layer have a predetermined thickness ratio, so as to facilitate the subsequent etching process, and save the amount of etching chemical liquid, speed up production and save production costs. In addition, the pre-formed conductive grooves can effectively avoid the problems of direct damage, vibration damage or breakdown of the insulating and heat-conducting layer under the conductive layer, resulting in a significant drop in jointability, insulation and thermal conductivity.

The content disclosed above is only the preferred feasible embodiment of the present invention, and it is not The patent application scope of the present invention is limited, so all equivalent technical changes made by using the description and drawings of the present invention are included in the patent application scope of the present invention.

800: Substrate structure of pretreatment

10: Insulation and heat conduction layer

20: Conductive layer

201: Bottom

21: Conductive groove

211: slot opening

212: tank bottom wall

30: non-photosensitive polymer shielding layer

T, T1, T2: Thickness

W, W1: width

Claims (18)

A method for etching and forming a substrate structure with a thick conductive layer, comprising: (a) Provide a conductive and insulating substrate structure, the conductive and insulating substrate structure has an insulating and heat-conducting layer, a conductive layer formed on the insulating and heat-conducting layer, and a layer covering the conductive layer non-photosensitive polymer masking layer; (b) removing part of the non-photosensitive polymer shielding layer and the lower part of the conductive layer by mechanical processing to form at least one conductive groove exposing the conductive layer, and making the conductive groove The thickness of the conductive layer forms a predetermined thickness ratio with the thickness of the conductive layer, so that the conductive and insulating substrate structure is formed into a pretreated substrate structure; (c) removing the reserved conductive layer from the groove bottom wall of the conductive groove to the bottom surface of the conductive layer by etching, and then removing the remaining non-photosensitive polymer shielding layer, thereby The final substrate structure with a patterned thick conductive layer is obtained. The etching forming method of a substrate structure with a thick conductive layer as described in claim 1, wherein the non-photosensitive polymer shielding layer is made of epoxy resin, acrylic resin, polyurethane (PU) resin, polyimide (PI) made of at least one of the resins. The etching forming method of a base material structure with a thick conductive layer according to Claim 1, wherein the insulating and heat-conducting layer is made of a composite material mixed with polymer materials and heat-conducting powder particles. The method for etching and forming a substrate structure with a thick conductive layer as described in claim 1, wherein, in step (b), further comprising making the width of the groove opening of the conductive groove and the groove of the conductive groove The width of the bottom wall forms a predetermined width ratio, and the predetermined width ratio is between 0.8:1 and 1:1. The etching forming method of a substrate structure having a thick conductive layer as claimed in claim 1, wherein the thickness of the conductive layer is between 0.5 and 6 mm. The method for etching and forming a substrate structure with a thick conductive layer as described in Claim 5, wherein, when the thickness of the conductive layer is between 0.5 and 1 mm, the thickness of the conductive groove and the thickness of the conductive layer The predetermined thickness ratio of thickness formation is between 0.6:1 and 0.99:1. The method for etching and forming a base material structure with a thick conductive layer as described in claim 5, wherein when the thickness of the conductive layer is between 1mm and 3mm, the thickness of the conductive groove and the thickness of the conductive layer The predetermined thickness ratio of thickness formation is between 0.8:1 and 0.99:1. The method for etching and forming a substrate structure with a thick conductive layer as described in claim 5, wherein when the thickness of the conductive layer is between 3mm and 6mm, the thickness of the conductive groove is the same as that of the conductive layer. The predetermined thickness ratio of thickness formation is between 0.9:1 and 0.99:1. A substrate structure with a thick conductive layer, comprising: an insulating and thermally conductive layer, a conductive layer formed on the insulating and thermally conductive layer, and a non-photosensitive polymer shielding layer covering the conductive layer; Wherein, the conductive layer forms at least one conductive groove exposing the conductive layer, and the conductive groove is obtained by removing part of the non-photosensitive polymer shielding layer and the lower part of the conductive groove by mechanical processing. A conductive layer is formed, and the thickness of the conductive groove and the thickness of the conductive layer form a predetermined thickness ratio. The substrate structure with a thick conductive layer as claimed in claim 9, wherein the thickness of the conductive layer is between 0.5 mm and 6 mm. The substrate structure with a thick conductive layer as described in claim 10, wherein when the thickness of the conductive layer is between 0.5 mm and 1 mm, the thickness of the conductive groove and the thickness of the conductive layer are formed by the The predetermined thickness ratio is between 0.6:1 and 0.99:1. The substrate structure with a thick conductive layer according to claim 10, wherein when the thickness of the conductive layer is between 1mm and 3mm, the thickness of the conductive groove and the thickness of the conductive layer form the The predetermined thickness ratio is between 0.8:1 and 0.99:1. The substrate structure with a thick conductive layer according to claim 10, wherein when the thickness of the conductive layer is between 3mm and 6mm, the thickness of the conductive groove and the thickness of the conductive layer form the The predetermined thickness ratio is between 0.9:1 and 0.99:1. The substrate structure with a thick conductive layer as claimed in claim 9, wherein the conductive groove is removed by milling a part of the non-photosensitive polymer shielding layer and a part of the conductive layer below it A metal conductive groove is formed. The substrate structure with a thick conductive layer according to claim 9, wherein the conductive groove is removed by turning the part of the non-photosensitive polymer shielding layer and the lower part of the conductive layer A metal conductive groove is formed. The substrate structure with a thick conductive layer as claimed in claim 9, wherein the conductive groove is partially removed from the non-photosensitive polymer shielding layer and the lower part of the conductive groove by electro-firing layer formed by a metal conductive groove. The substrate structure with a thick conductive layer as claimed in claim 9, wherein a metal thermally conductive layer is further formed under the insulating and thermally conductive layer. The substrate structure with a thick conductive layer according to claim 17, wherein a three-dimensional heat dissipation structure is formed inside the metal heat conduction layer, and the three-dimensional heat dissipation structure has a water cooling channel.

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