TWM623302U - Substrate structure - Google Patents
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Abstract
本新型提供一種基材結構包括有一絕緣導熱層及一形成在所述絕緣導熱層之上的導電層。其中,所述導電層形成至少有一導電凹槽,且所述導電凹槽是通過機械加工方式移除局部的所述導電層所形成,並且所述導電凹槽之厚度與所述導電層之厚度形成有一預定厚度比,且所述導電凹槽之槽開口與所述導電凹槽之槽底壁分別具有一第一預留寬度及一第二預留寬度,並且所述第二預留寬度與所述第一預留寬度形成有一預定寬度比,藉此可利於後續進行蝕刻加工。The present invention provides a base material structure comprising an insulating and heat-conducting layer and a conductive layer formed on the insulating and heat-conducting layer. Wherein, the conductive layer is formed with at least one conductive groove, and the conductive groove is formed by removing part of the conductive layer by machining, and the thickness of the conductive groove is the same as the thickness of the conductive layer. A predetermined thickness ratio is formed, and the groove opening of the conductive groove and the groove bottom wall of the conductive groove respectively have a first reserved width and a second reserved width, and the second reserved width and The first reserved width is formed with a predetermined width ratio, thereby facilitating subsequent etching processing.
Description
本新型涉及了一種基材結構。The new model relates to a base material structure.
目前針對金屬加工形成線路圖形,通常是以蝕刻加工方式來完成。但是對厚金屬進行蝕刻加工形成線路圖形會耗費大量的化學藥液,而對厚金屬進行機械加工形成線路圖形則極易對基底造成破壞。At present, the formation of circuit patterns for metal processing is usually completed by etching processing. However, etching a thick metal to form a circuit pattern consumes a lot of chemical solution, and machining a thick metal to form a circuit pattern can easily cause damage to the substrate.
有鑑於此,本新型創作人本於多年從事相關產品之開發與設計,有感上述缺失之可改善,乃特潛心研究並配合學理之運用,終於提出一種設計合理且有效改善上述缺失之本新型。In view of this, the creator of this new model has been engaged in the development and design of related products for many years, and feels that the above deficiencies can be improved. He has devoted himself to research and cooperated with the application of academic principles, and finally proposed a new model with a reasonable design and effectively improving the above deficiencies. .
本新型所要解決的技術問題在於,針對現有技術的不足提供一種基材結構。The technical problem to be solved by the present invention is to provide a base material structure in view of the deficiencies of the prior art.
本新型實施例提供一種基材結構,包括有一絕緣導熱層及一形成在所述絕緣導熱層之上的導電層;其中,所述導電層形成至少有一導電凹槽,且所述導電凹槽是通過機械加工方式移除局部的所述導電層所形成,並且所述導電凹槽之厚度與所述導電層之厚度形成有一預定厚度比,且所述導電凹槽之槽開口與所述導電凹槽之槽底壁分別具有一第一預留寬度及一第二預留寬度,並且所述第二預留寬度與所述第一預留寬度形成有一預定寬度比。The novel embodiment provides a substrate structure, which includes an insulating and thermally conductive layer and a conductive layer formed on the insulating and thermally conductive layer; wherein, the conductive layer forms at least one conductive groove, and the conductive groove is It is formed by removing part of the conductive layer by machining, and a predetermined thickness ratio is formed between the thickness of the conductive groove and the thickness of the conductive layer, and the groove opening of the conductive groove and the conductive groove are formed. The groove bottom walls of the grooves respectively have a first reserved width and a second reserved width, and the second reserved width and the first reserved width form a predetermined width ratio.
在一優選實施例中,所述導電層之厚度是介於0.5至6mm,並且所述導電凹槽之厚度與所述導電層之厚度形成的所述預定厚度比是介於0.8:1至1:1之間。In a preferred embodiment, the thickness of the conductive layer is between 0.5 to 6 mm, and the predetermined thickness ratio formed by the thickness of the conductive groove and the thickness of the conductive layer is between 0.8:1 to 1 :1 between.
在一優選實施例中,所述導電凹槽是通過銑削加工方式移除局部的所述導電層所形成的一金屬導電凹槽。In a preferred embodiment, the conductive groove is a metal conductive groove formed by removing a part of the conductive layer by milling.
在一優選實施例中,所述導電凹槽是通過車削加工方式移除局部的所述導電層所形成的一金屬導電凹槽。In a preferred embodiment, the conductive groove is a metal conductive groove formed by removing a part of the conductive layer by turning.
在一優選實施例中,所述導電凹槽是通過電火光加工方式移除局部的所述導電層所形成的一金屬導電凹槽。In a preferred embodiment, the conductive groove is a metal conductive groove formed by removing a part of the conductive layer by electrical spark machining.
為使能更進一步瞭解本新型的特徵及技術內容,請參閱以下有關本新型的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本新型加以限制。For a further understanding of the features and technical content of the present invention, please refer to the following detailed descriptions and drawings of the present invention. However, the drawings provided are only for reference and description, and are not intended to limit the present invention.
以下是通過特定的具體實施例來說明本新型所公開有關的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本新型的優點與效果。本新型可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不背離本新型的構思下進行各種修改與變更。另外,本新型的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本新型的相關技術內容,但所公開的內容並非用以限制本新型的保護範圍。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。The following are specific specific examples to illustrate the related embodiments disclosed by the present invention, and those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only for simple schematic illustration, and are not drawn according to the actual size, and are stated in advance. The following embodiments will further describe the related technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention. In addition, the term "or", as used herein, should include any one or a combination of more of the associated listed items, as the case may be.
請一併參閱圖1至圖3所示,本新型實施例提供一種不使用遮蔽層之基材結構之圖案化方法,主要包括有以下步驟。Please refer to FIG. 1 to FIG. 3 together. The present invention provides a method for patterning a substrate structure without using a shielding layer, which mainly includes the following steps.
如圖1所示,首先,(a)提供一導電絕緣之基材結構700,所述導電絕緣之基材結構700具有一絕緣導熱層10及一形成在所述絕緣導熱層10之上的導電層20。As shown in FIG. 1 , first, (a) provide a conductive and
進一步說,所述絕緣導熱層10是以高分子材料與導熱粉粒(e.g.陶瓷粉粒)混合之複合材料所製成,以達到絕緣及導熱效果。並且,所述導電層20是以金屬製成具預定厚度的厚導電層。在一優選實施例中,所述導電層20之厚度T是介於0.5至6mm之間。Furthermore, the insulating and heat-conducting
接著,如圖2所示,(b)以機械加工方式移除局部的所述導電層20以形成至少有一導電凹槽21,且使所述導電凹槽21之厚度T1與所述導電層20之厚度T形成有一預定厚度比(T1:T),也就是機械加工去除的金屬厚度(深度)與導電層20之厚度T具相關性,並使所述導電凹槽21之槽開口211與槽底壁212分別具有一第一預留寬度W1及一第二預留寬度W2,以將所述導電層20加工而形成圖案化之前身,從而使圖1所示的導電絕緣之基材結構700形成為圖2所示的預處理之基材結構800,即預成品。Next, as shown in FIG. 2 , (b) remove a part of the
在一優選實施例中,是以銑削加工方式移除局部的所述導電層20以形成至少有一所述導電凹槽21。In a preferred embodiment, a part of the
在一優選實施例中,是以車削加工方式移除局部的所述導電層20以形成至少有一所述導電凹槽21。In a preferred embodiment, the
在一優選實施例中,是以電火光加工方式移除局部的所述導電層20以形成至少有一所述導電凹槽21。In a preferred embodiment, at least one of the
另外,所述導電凹槽21之槽底壁212形成的第二預留寬度W2與所述導電凹槽21之槽開口211形成的第一預留寬度W1更形成有一預定寬度比(W2:W1),且所述預定寬度比是介於0.8:1至1:1之間。In addition, the second reserved width W2 formed by the
最後,如圖3所示,(c)以蝕刻加工方式(例如非等向蝕刻)移除圖2示出的導電凹槽21之槽底壁212下方至導電層20之底面201界定的一預留導電層(也就是所述導電凹槽21之槽底壁212正下方所殘留之導電層)而使所述導電凹槽21形成為導電溝槽22,且使所述導電溝槽22之側壁222與所述導電層20之表面202間形成有一特徵夾角
θ,從而得到最終的具有圖案化之厚導電層之基材結構900。
Finally, as shown in FIG. 3 , (c) a pre-removal area defined by the
進一步說,為了達到蝕刻後使得所述導電溝槽22之溝槽口221形成有預定的第一寬度W1a且所述導電溝槽22之兩側壁222(於厚度T2位置)間形成有預定的第二寬度W2a,需使蝕刻後的第一寬度W1a與蝕刻前的第一預留寬度W1的差值,加上蝕刻後的第二寬度W2a與蝕刻前的第二預留寬度W2的差值的總和,為預留導電層之厚度T2的0.5至2.5倍。並且,可以達到蝕刻後使得所述導電溝槽22之側壁222與所述導電層20之表面202間形成有一大於等於(≧)90°的特徵夾角
θ。
Further, in order to achieve a predetermined first width W1a in the
並且,所述導電層20之厚度T是介於0.5至6mm時,使所述導電凹槽21之厚度T1與所述導電層20之厚度T形成的預定厚度比(T1:T)是介於0.8:1至1:1之間。In addition, when the thickness T of the
並且,根據以上所述,本新型實施例亦提供一種基材結構,例如可以是圖2示出的預處理之基材結構800,其具有一絕緣導熱層10及一形成在所述絕緣導熱層10之上的導電層20。其中,所述導電層20形成至少有一導電凹槽21,且所述導電凹槽21是通過機械加工方式移除局部的所述導電層20所形成,並且所述導電凹槽21之厚度T1與所述導電層20之厚度T形成有一預定厚度比(T1:T),且所述導電凹槽21之槽開口211與所述導電凹槽21之槽底壁212分別具有一第一預留寬度W1及一第二預留寬度W2,並且所述第二預留寬度W2與所述第一預留寬度W1形成有一預定寬度比(W2:W1)。In addition, according to the above, the new embodiment of the present invention also provides a substrate structure, such as the pretreated
在一優選實施例中,所述導電凹槽21是通過銑削加工方式移除局部的所述導電層20所形成的一金屬導電凹槽。In a preferred embodiment, the
在一優選實施例中,所述導電凹槽21是通過車削加工方式移除局部的所述導電層20所形成的一金屬導電凹槽。In a preferred embodiment, the
在一優選實施例中,所述導電凹槽21是通過電火光加工方式移除局部的所述導電層20所形成的一金屬導電凹槽。In a preferred embodiment, the
在一優選實施例中,所述導電層20之厚度T是介於0.5至6mm,且所述導電凹槽21之厚度T1與所述導電層20之厚度T形成的預定厚度比(T1:T)是介於0.8:1至1:1之間。In a preferred embodiment, the thickness T of the
在一優選實施例中,所述第二預留寬度W2與所述第一預留寬度W1形成的預定寬度比(W2:W1)是介於0.8:1至1:1之間。In a preferred embodiment, the predetermined width ratio (W2:W1) formed by the second reserved width W2 and the first reserved width W1 is between 0.8:1 and 1:1.
再者,本新型實施例亦提供一種基材結構,例如可以是圖3示出的具有圖案化之厚導電層之基材結構900,其具有一絕緣導熱層10及一形成在所述絕緣導熱層10之上的導電層20。其中,所述導電層20形成至少有一裸露出所述絕緣導熱層10的導電溝槽22,且所述導電溝槽22是通過機械加工與無遮蔽層的蝕刻加工方式所形成,從而使得所述導電溝槽22之側壁222與所述導電層20之表面202間形成有一大於等於(≧)90°的特徵夾角
θ。
Furthermore, the present novel embodiment also provides a substrate structure, such as the
綜合以上所述,本新型實施例提供的一種基材結構,其可以通過「一絕緣導熱層及一形成在所述絕緣導熱層之上的導電層」、「所述導電層形成至少有一導電凹槽,且所述導電凹槽是通過機械加工方式移除局部的所述導電層所形成,並且所述導電凹槽之厚度與所述導電層之厚度形成有一預定厚度比,且所述導電凹槽之槽開口與所述導電凹槽之槽底壁分別具有一第一預留寬度及一第二預留寬度,並且所述第二預留寬度與所述第一預留寬度形成有一預定寬度比」的技術方案,使得具預定厚度的導電層能夠通過機械加工預形成有導電凹槽,且使機械加工所形成的導電凹槽之厚度與導電層之厚度形成有預定厚度比,以利於後續進行蝕刻加工,且可節約蝕刻化學藥液的用量,加快生產速度並節省生產成本,除此之外,通過預形成有導電凹槽,可有效避免直接破壞、震動破壞或擊穿導電層之下的絕緣導熱層,導致接合性、絕緣性及導熱性大幅下降的問題。To sum up the above, the new embodiment provides a substrate structure, which can be formed by "an insulating and heat-conducting layer and a conductive layer formed on the insulating and heat-conducting layer", "the conductive layer is formed with at least one conductive recess. The conductive groove is formed by removing part of the conductive layer by machining, and the thickness of the conductive groove and the thickness of the conductive layer are formed with a predetermined thickness ratio, and the conductive groove is formed. The slot opening of the slot and the slot bottom wall of the conductive slot respectively have a first reserved width and a second reserved width, and the second reserved width and the first reserved width form a predetermined width The technical solution of "ratio" enables a conductive layer with a predetermined thickness to be pre-formed with a conductive groove by machining, and a predetermined thickness ratio is formed between the thickness of the conductive groove formed by machining and the thickness of the conductive layer, so as to facilitate the subsequent Etching processing can save the amount of etching chemicals, speed up production and save production costs. In addition, by pre-forming conductive grooves, it can effectively avoid direct damage, vibration damage or breakdown under the conductive layer. The insulating and heat-conducting layer caused by the large drop in bonding, insulating and thermal conductivity.
以上所公開的內容僅為本新型的優選可行實施例,並非因此侷限本新型的申請專利範圍,所以凡是運用本新型說明書及圖式內容所做的等效技術變化,均包含於本新型的申請專利範圍內。The contents disclosed above are only preferred and feasible embodiments of the present invention, and are not intended to limit the scope of the patent application of the present invention. Therefore, any equivalent technical changes made by using the contents of the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.
700:導電絕緣之基材結構 800:預處理之基材結構 900:具有圖案化之厚導電層之基材結構 10:絕緣導熱層 20:導電層 201:底面 202:表面 21:導電凹槽 211:槽開口 212:槽底壁 22:導電溝槽 221:溝槽口 222:側壁 T, T1, T2:厚度 W1, W2,W1a,W2a:寬度 θ:特徵夾角 700: Conductive and insulating substrate structure 800: Pretreated substrate structure 900: Substrate structure with patterned thick conductive layer 10: Insulating thermally conductive layer 20: Conductive layer 201: Bottom surface 202: Surface 21: Conductive groove 211 : Slot opening 212: Slot bottom wall 22: Conductive trench 221: Slot opening 222: Side wall T, T1, T2: Thickness W1, W2, W1a, W2a: Width θ : Feature included angle
圖1為本新型一實施例的基材結構的側視示意圖。FIG. 1 is a schematic side view of a substrate structure according to an embodiment of the novel.
圖2為本新型一實施例的基材結構的側視示意圖。FIG. 2 is a schematic side view of a substrate structure according to an embodiment of the novel.
圖3為本新型一實施例的基材結構的側視示意圖。3 is a schematic side view of a substrate structure according to an embodiment of the novel.
800:預處理之基材結構 800: Pretreated substrate structure
10:絕緣導熱層 10: Insulation and heat conduction layer
20:導電層 20: Conductive layer
201:底面 201: Underside
21:導電凹槽 21: Conductive groove
211:槽開口 211: Slot opening
212:槽底壁 212: Bottom wall of groove
T,T1,T2:厚度 T, T1, T2: Thickness
W1,W2:寬度 W1,W2: width
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