TWM623302U - Substrate structure - Google Patents

Abstract

The present invention provides a base material structure comprising an insulating and heat-conducting layer and a conductive layer formed on the insulating and heat-conducting layer. Wherein, the conductive layer is formed with at least one conductive groove, and the conductive groove is formed by removing part of the conductive layer by machining, and the thickness of the conductive groove is the same as the thickness of the conductive layer. A predetermined thickness ratio is formed, and the groove opening of the conductive groove and the groove bottom wall of the conductive groove respectively have a first reserved width and a second reserved width, and the second reserved width and The first reserved width is formed with a predetermined width ratio, thereby facilitating subsequent etching processing.

Description

a base structure

The new model relates to a base material structure.

At present, the formation of circuit patterns for metal processing is usually completed by etching processing. However, etching a thick metal to form a circuit pattern consumes a lot of chemical solution, and machining a thick metal to form a circuit pattern can easily cause damage to the substrate.

In view of this, the creator of this new model has been engaged in the development and design of related products for many years, and feels that the above deficiencies can be improved. He has devoted himself to research and cooperated with the application of academic principles, and finally proposed a new model with a reasonable design and effectively improving the above deficiencies. .

The technical problem to be solved by the present invention is to provide a base material structure in view of the deficiencies of the prior art.

The novel embodiment provides a substrate structure, which includes an insulating and thermally conductive layer and a conductive layer formed on the insulating and thermally conductive layer; wherein, the conductive layer forms at least one conductive groove, and the conductive groove is It is formed by removing part of the conductive layer by machining, and a predetermined thickness ratio is formed between the thickness of the conductive groove and the thickness of the conductive layer, and the groove opening of the conductive groove and the conductive groove are formed. The groove bottom walls of the grooves respectively have a first reserved width and a second reserved width, and the second reserved width and the first reserved width form a predetermined width ratio.

In a preferred embodiment, the thickness of the conductive layer is between 0.5 to 6 mm, and the predetermined thickness ratio formed by the thickness of the conductive groove and the thickness of the conductive layer is between 0.8:1 to 1 :1 between.

In a preferred embodiment, the conductive groove is a metal conductive groove formed by removing a part of the conductive layer by milling.

In a preferred embodiment, the conductive groove is a metal conductive groove formed by removing a part of the conductive layer by turning.

In a preferred embodiment, the conductive groove is a metal conductive groove formed by removing a part of the conductive layer by electrical spark machining.

For a further understanding of the features and technical content of the present invention, please refer to the following detailed descriptions and drawings of the present invention. However, the drawings provided are only for reference and description, and are not intended to limit the present invention.

The following are specific specific examples to illustrate the related embodiments disclosed by the present invention, and those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only for simple schematic illustration, and are not drawn according to the actual size, and are stated in advance. The following embodiments will further describe the related technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention. In addition, the term "or", as used herein, should include any one or a combination of more of the associated listed items, as the case may be.

Please refer to FIG. 1 to FIG. 3 together. The present invention provides a method for patterning a substrate structure without using a shielding layer, which mainly includes the following steps.

As shown in FIG. 1 , first, (a) provide a conductive and insulating substrate structure 700 , the conductive and insulating substrate structure 700 has an insulating and thermally conductive layer 10 and a conductive and conductive layer formed on the insulating and thermally conductive layer 10 . Layer 20.

Furthermore, the insulating and heat-conducting layer 10 is made of a composite material which is a mixture of polymer material and heat-conducting powder (e.g. ceramic powder) to achieve insulating and heat-conducting effects. Moreover, the conductive layer 20 is a thick conductive layer made of metal with a predetermined thickness. In a preferred embodiment, the thickness T of the conductive layer 20 is between 0.5 and 6 mm.

Next, as shown in FIG. 2 , (b) remove a part of the conductive layer 20 by machining to form at least one conductive groove 21 , and make the thickness T1 of the conductive groove 21 and the conductive layer 20 equal to that of the conductive layer 20 . The thickness T is formed with a predetermined thickness ratio (T1:T), that is, the thickness (depth) of the metal removed by machining is related to the thickness T of the conductive layer 20, and the groove opening 211 of the conductive groove 21 and the groove are formed. The bottom wall 212 has a first reserved width W1 and a second reserved width W2 respectively, so as to process the conductive layer 20 to form a patterned precursor, so as to make the conductive and insulating substrate structure 700 shown in FIG. 1 . The pretreated substrate structure 800 shown in FIG. 2 is formed, ie, a pre-finished product.

In a preferred embodiment, a part of the conductive layer 20 is removed by milling to form at least one of the conductive grooves 21 .

In a preferred embodiment, the conductive layer 20 is partially removed by turning to form at least one of the conductive grooves 21 .

In a preferred embodiment, at least one of the conductive grooves 21 is formed by removing a part of the conductive layer 20 by electrical spark machining.

In addition, the second reserved width W2 formed by the groove bottom wall 212 of the conductive groove 21 and the first reserved width W1 formed by the groove opening 211 of the conductive groove 21 are further formed with a predetermined width ratio (W2:W1 ), and the predetermined width ratio is between 0.8:1 and 1:1.

Finally, as shown in FIG. 3 , (c) a pre-removal area defined by the bottom surface 201 of the conductive layer 20 from below the bottom wall 212 of the conductive groove 21 shown in FIG. 2 is removed by etching (eg, anisotropic etching). A conductive layer (that is, the conductive layer remaining directly below the bottom wall 212 of the conductive groove 21 ) is left to form the conductive groove 21 into a conductive groove 22 , and the sidewalls of the conductive groove 22 are formed. A characteristic included angle θ is formed between 222 and the surface 202 of the conductive layer 20 , thereby obtaining the final substrate structure 900 with a patterned thick conductive layer.

Further, in order to achieve a predetermined first width W1a in the opening 221 of the conductive trench 22 after etching, and a predetermined first width W1a is formed between the two sidewalls 222 of the conductive trench 22 (at the thickness T2) Two widths W2a, it is necessary to make the difference between the first width W1a after etching and the first reserved width W1 before etching, plus the difference between the second width W2a after etching and the second reserved width W2 before etching The sum is 0.5 to 2.5 times the thickness T2 of the reserved conductive layer. Moreover, after etching, a characteristic included angle θ greater than or equal to (≧)90° can be formed between the sidewall 222 of the conductive trench 22 and the surface 202 of the conductive layer 20 .

In addition, when the thickness T of the conductive layer 20 is between 0.5 and 6 mm, the predetermined thickness ratio (T1:T) formed between the thickness T1 of the conductive groove 21 and the thickness T of the conductive layer 20 is between Between 0.8:1 and 1:1.

In addition, according to the above, the new embodiment of the present invention also provides a substrate structure, such as the pretreated substrate structure 800 shown in FIG. Conductive layer 20 on top of 10. Wherein, the conductive layer 20 is formed with at least one conductive groove 21, and the conductive groove 21 is formed by removing a part of the conductive layer 20 by machining, and the thickness T1 of the conductive groove 21 is the same as that of the conductive groove 21. The thickness T of the conductive layer 20 is formed with a predetermined thickness ratio (T1:T), and the groove opening 211 of the conductive groove 21 and the groove bottom wall 212 of the conductive groove 21 respectively have a first reserved width W1 and a second reserved width W2, and the second reserved width W2 and the first reserved width W1 form a predetermined width ratio (W2:W1).

In a preferred embodiment, the conductive groove 21 is a metal conductive groove formed by partially removing the conductive layer 20 by milling.

In a preferred embodiment, the conductive groove 21 is a metal conductive groove formed by partially removing the conductive layer 20 by turning.

In a preferred embodiment, the conductive groove 21 is a metal conductive groove formed by removing a part of the conductive layer 20 by electrical spark machining.

In a preferred embodiment, the thickness T of the conductive layer 20 is between 0.5 and 6 mm, and the thickness T1 of the conductive groove 21 and the thickness T of the conductive layer 20 form a predetermined thickness ratio (T1:T ) is between 0.8:1 and 1:1.

In a preferred embodiment, the predetermined width ratio (W2:W1) formed by the second reserved width W2 and the first reserved width W1 is between 0.8:1 and 1:1.

Furthermore, the present novel embodiment also provides a substrate structure, such as the substrate structure 900 with a patterned thick conductive layer shown in FIG. Conductive layer 20 over layer 10 . The conductive layer 20 forms at least one conductive trench 22 exposing the insulating and thermally conductive layer 10 , and the conductive trench 22 is formed by machining and etching without a shielding layer, so that the A characteristic included angle θ greater than or equal to (≧) 90° is formed between the sidewall 222 of the conductive trench 22 and the surface 202 of the conductive layer 20 .

To sum up the above, the new embodiment provides a substrate structure, which can be formed by "an insulating and heat-conducting layer and a conductive layer formed on the insulating and heat-conducting layer", "the conductive layer is formed with at least one conductive recess. The conductive groove is formed by removing part of the conductive layer by machining, and the thickness of the conductive groove and the thickness of the conductive layer are formed with a predetermined thickness ratio, and the conductive groove is formed. The slot opening of the slot and the slot bottom wall of the conductive slot respectively have a first reserved width and a second reserved width, and the second reserved width and the first reserved width form a predetermined width The technical solution of "ratio" enables a conductive layer with a predetermined thickness to be pre-formed with a conductive groove by machining, and a predetermined thickness ratio is formed between the thickness of the conductive groove formed by machining and the thickness of the conductive layer, so as to facilitate the subsequent Etching processing can save the amount of etching chemicals, speed up production and save production costs. In addition, by pre-forming conductive grooves, it can effectively avoid direct damage, vibration damage or breakdown under the conductive layer. The insulating and heat-conducting layer caused by the large drop in bonding, insulating and thermal conductivity.

The contents disclosed above are only preferred and feasible embodiments of the present invention, and are not intended to limit the scope of the patent application of the present invention. Therefore, any equivalent technical changes made by using the contents of the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.

700: Conductive and insulating substrate structure 800: Pretreated substrate structure 900: Substrate structure with patterned thick conductive layer 10: Insulating thermally conductive layer 20: Conductive layer 201: Bottom surface 202: Surface 21: Conductive groove 211 : Slot opening 212: Slot bottom wall 22: Conductive trench 221: Slot opening 222: Side wall T, T1, T2: Thickness W1, W2, W1a, W2a: Width θ : Feature included angle

FIG. 1 is a schematic side view of a substrate structure according to an embodiment of the novel.

FIG. 2 is a schematic side view of a substrate structure according to an embodiment of the novel.

3 is a schematic side view of a substrate structure according to an embodiment of the novel.

800: Pretreated substrate structure

10: Insulation and heat conduction layer

20: Conductive layer

201: Underside

21: Conductive groove

211: Slot opening

212: Bottom wall of groove

T, T1, T2: Thickness

W1,W2: width

Claims (6)

A base material structure, comprising an insulating and heat-conducting layer and a conductive layer formed on the insulating and heat-conducting layer; wherein, the conductive layer is formed with at least one conductive groove, and the conductive groove is moved by mechanical processing. Except that part of the conductive layer is formed, and the thickness of the conductive groove and the thickness of the conductive layer are formed with a predetermined thickness ratio, and the groove opening of the conductive groove and the groove bottom wall of the conductive groove are formed. There are a first reserved width and a second reserved width respectively, and the second reserved width and the first reserved width form a predetermined width ratio. The substrate structure of claim 1, wherein the thickness of the conductive layer is between 0.5 and 6 mm, and the predetermined thickness ratio formed by the thickness of the conductive groove and the thickness of the conductive layer is Between 0.8:1 and 1:1. The substrate structure according to claim 1, wherein the conductive groove is a metal conductive groove formed by removing a part of the conductive layer by milling. The substrate structure according to claim 1, wherein the conductive groove is a metal conductive groove formed by removing a part of the conductive layer by turning. The base material structure according to claim 1, wherein the conductive groove is a metal conductive groove formed by removing a part of the conductive layer by electrical spark machining. The substrate structure according to claim 1, wherein the predetermined width ratio formed by the second reserved width and the first reserved width is between 0.8:1 and 1:1.

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