TWI791093B - 電漿處理方法 - Google Patents

電漿處理方法 Download PDF

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Publication number
TWI791093B
TWI791093B TW108105546A TW108105546A TWI791093B TW I791093 B TWI791093 B TW I791093B TW 108105546 A TW108105546 A TW 108105546A TW 108105546 A TW108105546 A TW 108105546A TW I791093 B TWI791093 B TW I791093B
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TW
Taiwan
Prior art keywords
substrate
focus ring
voltage
plasma
film
Prior art date
Application number
TW108105546A
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English (en)
Chinese (zh)
Other versions
TW201937594A (zh
Inventor
永岩利文
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW201937594A publication Critical patent/TW201937594A/zh
Application granted granted Critical
Publication of TWI791093B publication Critical patent/TWI791093B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
TW108105546A 2018-02-23 2019-02-20 電漿處理方法 TWI791093B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018030501A JP7018331B2 (ja) 2018-02-23 2018-02-23 プラズマ処理方法及びプラズマ処理装置
JP2018-030501 2018-02-23

Publications (2)

Publication Number Publication Date
TW201937594A TW201937594A (zh) 2019-09-16
TWI791093B true TWI791093B (zh) 2023-02-01

Family

ID=67686115

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108105546A TWI791093B (zh) 2018-02-23 2019-02-20 電漿處理方法

Country Status (4)

Country Link
US (2) US10714318B2 (enExample)
JP (1) JP7018331B2 (enExample)
KR (2) KR102661857B1 (enExample)
TW (1) TWI791093B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020023409A1 (en) * 2018-07-24 2020-01-30 Applied Materials, Inc. Optically transparent pedestal for fluidly supporting a substrate
US20210195726A1 (en) * 2019-12-12 2021-06-24 James Andrew Leskosek Linear accelerator using a stacked array of cyclotrons
JP7475193B2 (ja) 2020-05-07 2024-04-26 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102807826B1 (ko) * 2021-01-08 2025-05-14 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법
CN119852157B (zh) * 2025-01-02 2025-12-05 湖北江城实验室 一种等离子体处理装置及其处理晶片的方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050230049A1 (en) * 2004-04-14 2005-10-20 Ryoji Nishio Method and apparatus for plasma processing
JP2007258417A (ja) * 2006-03-23 2007-10-04 Tokyo Electron Ltd プラズマ処理方法
JP2008227063A (ja) * 2007-03-12 2008-09-25 Tokyo Electron Ltd プラズマ処理装置及びプラズマ分布補正方法
US20100025369A1 (en) * 2008-07-30 2010-02-04 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
TW201130395A (en) * 2009-05-27 2011-09-01 Tokyo Electron Ltd Circular ring-shaped member for plasma process and plasma processing apparatus
US20170207110A1 (en) * 2016-01-15 2017-07-20 Tokyo Electron Limited Structure of mounting table and semiconductor processing apparatus
TW201732922A (zh) * 2015-12-17 2017-09-16 東京威力科創股份有限公司 電漿處理方法及電漿處理裝置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6363882B1 (en) 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
US7858155B2 (en) * 2004-11-02 2010-12-28 Panasonic Corporation Plasma processing method and plasma processing apparatus
JP4566789B2 (ja) 2005-03-07 2010-10-20 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US20070224709A1 (en) 2006-03-23 2007-09-27 Tokyo Electron Limited Plasma processing method and apparatus, control program and storage medium
KR20080001164A (ko) * 2006-06-29 2008-01-03 주식회사 하이닉스반도체 홀 휨 방지를 위한 플라즈마식각장치 및 그를 이용한 식각방법
KR20080023569A (ko) * 2006-09-11 2008-03-14 주식회사 하이닉스반도체 식각프로파일 변형을 방지하는 플라즈마식각장치
JP5281309B2 (ja) * 2008-03-28 2013-09-04 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
JP5395633B2 (ja) * 2009-11-17 2014-01-22 東京エレクトロン株式会社 基板処理装置の基板載置台
JP5948026B2 (ja) * 2011-08-17 2016-07-06 東京エレクトロン株式会社 半導体製造装置及び処理方法
US11404249B2 (en) * 2017-03-22 2022-08-02 Tokyo Electron Limited Substrate processing apparatus

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050230049A1 (en) * 2004-04-14 2005-10-20 Ryoji Nishio Method and apparatus for plasma processing
JP2007258417A (ja) * 2006-03-23 2007-10-04 Tokyo Electron Ltd プラズマ処理方法
JP2008227063A (ja) * 2007-03-12 2008-09-25 Tokyo Electron Ltd プラズマ処理装置及びプラズマ分布補正方法
US20100025369A1 (en) * 2008-07-30 2010-02-04 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
TW201130395A (en) * 2009-05-27 2011-09-01 Tokyo Electron Ltd Circular ring-shaped member for plasma process and plasma processing apparatus
TW201732922A (zh) * 2015-12-17 2017-09-16 東京威力科創股份有限公司 電漿處理方法及電漿處理裝置
US20170207110A1 (en) * 2016-01-15 2017-07-20 Tokyo Electron Limited Structure of mounting table and semiconductor processing apparatus

Also Published As

Publication number Publication date
TW201937594A (zh) 2019-09-16
US20200303170A1 (en) 2020-09-24
JP2019145729A (ja) 2019-08-29
KR20190101889A (ko) 2019-09-02
KR20240060768A (ko) 2024-05-08
US11342165B2 (en) 2022-05-24
JP7018331B2 (ja) 2022-02-10
US10714318B2 (en) 2020-07-14
KR102661857B1 (ko) 2024-04-26
US20190267217A1 (en) 2019-08-29

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