TWI791064B - 閘極結構及其製作方法 - Google Patents

閘極結構及其製作方法 Download PDF

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TWI791064B
TWI791064B TW107139307A TW107139307A TWI791064B TW I791064 B TWI791064 B TW I791064B TW 107139307 A TW107139307 A TW 107139307A TW 107139307 A TW107139307 A TW 107139307A TW I791064 B TWI791064 B TW I791064B
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trench
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TW202018948A (zh
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楊傑甯
張文聰
蘇柏文
賴冠穎
蘇柏羽
邱春茂
王堯展
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聯華電子股份有限公司
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Priority to US16/205,174 priority patent/US11205705B2/en
Publication of TW202018948A publication Critical patent/TW202018948A/zh
Priority to US17/523,946 priority patent/US11881518B2/en
Priority to US17/524,723 priority patent/US11929418B2/en
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Abstract

一種閘極結構包含一基底劃分為N型電晶體區和P型電晶體區，一層間介電層覆蓋基底，一第一溝渠埋入N型電晶體區的層間介電層，一第一閘極電極設置於第一溝渠內，第一閘極電極具有一子彈形輪廓，一閘極介電層接觸第一溝渠，一N型功函數層設置於閘極介電層和第一閘極電極之間，一第二溝渠埋入P型電晶體區內的層間介電層，一第二閘極電極設置於第二溝渠內，第二閘極電極具有一第一洋菇形輪廓，閘極介電層接觸第二溝渠，N型功函數層設置於閘極介電層和第二閘極電極之間以及一第一P型功函數層設置於閘極介電層和N型功函數層之間。

Description

閘極結構及其製作方法
本發明是關於一種閘極結構，特別是關於一種金屬閘極結構和其製作方法。
半導體積體電路(integrated circuits；IC)產業歷經快速地成長。隨著在積體電路的材料與設計中科技的進步，每一個世代皆具有比先前世代更小更複雜的積體電路。然而，這樣的優勢卻也增加了製程的複雜性。而為了實現這些優勢，積體電路的製程也需要同步地發展。隨著積體電路改革的進展，已普遍地提高元件密度，並且減少幾何尺寸。
為促進半導體元件之縮小尺寸製程，金屬閘極電極可用來取代常規的多晶矽電極。金屬閘極電極的形成可包含閘極取代製程，其中虛設閘極被移除以形成一開口在其位置，且開口後續由金屬材料所填充以形成金屬閘極電極。然而，隨著積體電路尺寸縮小，金屬閘極電極的體積也隨之縮小，但縮小金屬閘極電極會具有較高的片電阻，因此如何在縮小晶片尺寸的同時又能夠降低金屬閘極電極的片電阻為目前需要解決的問題。
有鑑於此，本發明提出一種新穎的閘極結構及其製作方法，以解決上述問題。
根據本發明之一較佳實施例，一種閘極結構包含一基底，基底劃分 為一N型電晶體區和一P型電晶體區，一層間介電層覆蓋基底，一第一N型閘極結構設置於N型電晶體區，第一N型閘極結構包含一第一溝渠埋入層間介電層，一第一閘極電極設置於第一溝渠內，第一閘極電極由側視方向來看具有一子彈形輪廓，一閘極介電層接觸第一溝渠，一N型功函數層設置於閘極介電層和第一閘極電極之間，一第一P型閘極結構設置於P型電晶體區，第一P型閘極結構包含一第二溝渠埋入層間介電層，一第二閘極電極設置於第二溝渠內，第二閘極電極由側視方向來看具有一第一洋菇形輪廓，閘極介電層接觸第二溝渠，N型功函數層設置於閘極介電層和第二閘極電極之間以及一第一P型功函數層設置於閘極介電層和N型功函數層之間。
根據本發明之一較佳實施例，一種閘極結構的製作方法包含提供一基底劃分為一N型電晶體區和一P型電晶體區，一層間介電層覆蓋N型電晶體區和P型電晶體區，一第一溝渠設置於N型電晶體區的層間介電層中，一第二溝渠設置於P型電晶體區的層間介電層中，一閘極介電層覆蓋第一溝渠和第二溝渠，接著形成一P型功函數層覆蓋第二溝渠，進行一第一移除步驟，以去除覆蓋在第二溝渠之上部的P型功函數層，在第一移除步驟之後，形成一N型功函數層覆蓋第一溝渠和第二溝渠，接著形成一金屬層於第一溝渠和第二溝渠的N型功函數層上，然後進行一第二移除步驟，以移除部分之閘極介電層、部分之金屬層、部分之N型功函數層使得閘極介電層之最高表面、金屬層之最高表面和N型功函數層之最高表面低於層間介電層之上表面，最後進行一第三移除步驟，移除部分之N型功函數層，使得金屬層凸出於N型功函數層，並且在第一溝渠中的金屬層由側視方向來看形成一子彈形輪廓，在第二溝渠中的金屬層由側視方向來看形成一洋菇形輪廓。
10:基底
12:N型電晶體區
14:P型電晶體區
16:層間介電層
18:第一溝渠
20:第二溝渠
22:第三溝渠
24:第四溝渠
26:源極/汲極摻雜區
28:源極/汲極摻雜區
30:源極/汲極摻雜區
32:源極/汲極摻雜區
34:側壁子
36:蝕刻停止層
38:閘極介電層
40:緩衝層
42:第一P型功函數層
44:第二P型功函數層
46:第三P型功函數層
48:第一移除步驟
50:N型功函數層
52:金屬層
54:第二移除步驟
56:第三移除步驟
58:第一閘極電極
60:子彈形輪廓
60a:第一拱形
60b:第一矩形
62:第二閘極電極
64:第一洋菇形輪廓
64a:第二拱形
64b:第二矩形
66:第三閘極電極
68:第二洋菇形輪廓
68a:第三拱形
68b:第三矩形
70:第四閘極電極
72:第三洋菇形輪廓
72a:第四拱形
72b:第四矩形
74:上蓋層
76:層間介電層
78:導電插塞
80:第一N型閘極結構
82:第二N型閘極結構
86:第一P型閘極結構
88:第二P型閘極結構
100:閘極結構
D1:深度
D2:距離
H:高度
W:寬度
第1圖到第6圖為本發明所提供的閘極結構的製作方法側視示意圖。
第7圖為根據本發明之另一較佳實施例所提供的閘極結構的製作方法側視示意圖。
第1圖到第6圖為本發明所提供的閘極結構的製作方法側視示意圖。請參考第1圖。首先，提供一基底10，基底劃分為一N型電晶體區12和一P型電晶體區14，基底10可以為矽基底、含矽基底、或矽覆絕緣(silicon-on-insulator，SOI)基底等，且基底10內可具有複數個隔離結構(圖未示)，用來提供不同元件之間的電性隔離。此外基底10可以是鰭狀結構或是平面晶圓。一層間介電層16覆蓋基底10，一第一溝渠18和一第三溝渠22設置在N型電晶體區內的層間介電層16，一第二溝渠20和一第四溝渠24設置在P型電晶體區14內的層間介電層16，第一溝渠18、第二溝渠20、第三溝渠22和第四溝渠24各自的兩側分別設置有源極/汲極摻雜區26/28/30/32。根據本發明之較佳實施例，第一溝渠18、第二溝渠20、第三溝渠22和第四溝渠24的形狀和大小皆相同，但不限於此，第一溝渠18、第二溝渠20、第三溝渠22和第四溝渠24的形狀和大小可隨不同需求各自調整。此外，第一溝渠18、第二溝渠20、第三溝渠22和第四溝渠24的外側各自被一側壁子34圍繞，在各個側壁子上覆蓋有一蝕刻停止層36。側壁子34和蝕刻停止層36的材料包含氮化矽或氮氧化矽等。
接著形成一閘極介電層38順應地覆蓋並接觸第一溝渠18、第二溝渠20、第三溝渠22和第四溝渠24，閘極介電層38，材質可包含氮化矽(SiN)、氮氧化矽(SiON)以及金屬氧化物例如氧化鉿(hafnium oxide，HfO2)、矽酸鉿氧化合物(hafnium silicon oxide，HfSiO)、矽酸鉿氮氧化合物(hafnium silicon oxynitride， HfSiON)、氧化鋁(aluminum oxide，Al2O3)、氧化鑭(lanthanum oxide，La2O3)、鋁酸鑭(lanthanum aluminum oxide，LaAlO3)、氧化鉭(tantalum oxide，Ta2O5)、氧化鋯(zirconium oxide，ZrO2)、矽酸鋯氧化合物(zirconium silicon oxide，ZrSiO4)、或鋯酸鉿(hafnium zirconium oxide，HfZrO3)等，但不限於此。
之後形成一緩衝層40順應地覆蓋在第一溝渠18、第二溝渠20、第三溝渠22和第四溝渠24中的閘極介電層38，緩衝層40可包含鈦(titanium，Ti)、鉭(tantalum，Ta)、氮化鈦(titanium nitride，TiN)、氮化鉭(tantalum nitride，TaN)或其組合，依需求可為單層或多層。接續形成一第一P型功函數層42接觸並順應地覆蓋在第二溝渠20裡的緩衝層40，形成一第二P型功函數層44接觸並順應地覆蓋在第三溝渠22裡的緩衝層40，形成一第三P型功函數層46接觸順並應地覆蓋在第四溝渠24裡的緩衝層40，值得注意的是沒有任何P型功函數層形成在第一溝渠18中，此外第三P型功函數層46的厚度大於第一P型功函數層42的厚度，第一P型功函數層42的厚度大於第二P型功函數層44的厚度。第一P型功函數層42、第二P型功函數層44和第三型功函數層46可以各自獨立地選自氮化鈦(TiN)、氮化鉭(TaN)、碳化鈦(TiC)、碳化鉭(TaC)、碳化鎢(WC)或氮化鋁鈦(TiAlN)，可為單層或多層結構，較佳地第一P型功函數層42、第二P型功函數層44和第三型功函數層46可以為相同材料，但不限於此，第一P型功函數層42、第二P型功函數層44和第三型功函數層46也可以為不同材料。在第1圖的步驟完成後，所形成的閘極介電層38、緩衝層40、第一P型功函數層42、第二P型功函數層44和第三P型功函數層46由側視方向看，皆為U型，並且閘極介電層38、緩衝層40、第一P型功函數層42、第二P型功函數層44和第三P型功函數層46各自的末端都和層間介電層16的上表面切齊，此時在第一溝渠18、第二溝渠20、第三溝渠22和第四溝渠24尚未被完全填滿。
如第2圖所示，進行一第一移除步驟48，以去除覆蓋在第二溝渠20之 上部的第一P型功函數層42、第三溝渠22上部的第二P型功函數層44和第四溝渠24上部的第三P型功函數層46，在移除第一P型功函數層42、第二P型功函數層44和第三P型功函數層46時，緩衝層40和閘極介電層38未被移除，第二溝渠20、第三溝渠22和第四溝渠24具有相同的一深度D1，而在第一移除步驟48完成之後，第一P型功函數層42、第二P型功函數層44和第三P型功函數層46各自的兩末端被削減，而第一P型功函數層42、第二P型功函數層44和第三P型功函數層46在第一移除步驟48完成之後各自的兩末端和基底10的上表面具有一相同的距離D2，根據本發明之較佳實施例，深度D1為距離D2的5至25倍。
如第3圖所示，形成一N型功函數層50同時覆蓋第一溝渠18裡的緩衝層40、第三溝渠22裡的第二P型功函數層44和緩衝層40、第二溝渠20裡的第一P型功函數層42和緩衝層40以及第四溝渠24裡的第三P型功函數層46和緩衝層40，N型功函數層50可以包含鋁化鈦(TiAl)、鋁化鋯(ZrAl)、鋁化鎢(WAl)、鋁化鉭(TaAl)或鋁化鉿(HfAl)。由於第一溝渠18裡沒有P型功函數層所以在第一溝渠18裡的N型功函數層50由側視方向來看為U型，而在第二溝渠20、第三溝渠22和第四溝渠24中的N型功函數層50，則因為有剩餘的第一P型功函數層42、剩餘的第二P型功函數層44和剩餘的第三P型功函數層46，因此在第一P型功函數層42、第二P型功函數層44和第三P型功函數層46上會各自有二個階梯輪廓。接著形成一金屬層52覆蓋第一溝渠18、第二溝渠20、第三溝渠22和第四溝渠24中的N型功函數層50，在形成金屬層50後第一溝渠18、第二溝渠20、第三溝渠22和第四溝渠24完全被填滿，金屬層52的上表面和N型功函數層50的兩個末端皆和層間介電層16的上表面切齊。金屬層52的材料包含鎢(W)或其他合適的的材料，例如鋁(Al)、鈦(Ti)、鉭(Ta)、鈮(Nb)、鉬(Mo)、銅(Cu)、氮化鈦(TiN)、碳化鈦(TiC)、氮化鉭(TaN)、鈦鎢(Ti/W)、或鈦與氮化鈦(Ti/TiN)，但不限於此。
如第4圖所示，進行一第二移除步驟54，以同時移除在第一溝渠18、 第二溝渠20、第三溝渠22和第四溝渠24內的部分之閘極介電層38、部分之緩衝層40、部分之N型功函數層50和部分之金屬層52，第二移除步驟54較佳為一化學機械研磨製程，在不同的實施例中第二移除步驟54也可以為濕蝕刻或乾蝕刻。在第二移除步驟54之後，剩餘的閘極介電層38、剩餘的緩衝層40、剩餘的N型功函數層50和剩餘的金屬層52各自的最高表面低於層間介電層16之上表面。此外，在第一溝渠18、第二溝渠20、第三溝渠22和第四溝渠24內的剩餘的閘極介電層38、剩餘的緩衝層40、剩餘的N型功函數層50和剩餘的金屬層52的最高表面皆為共平面。
如第5圖所示，進行一第三移除步驟56，移除在第一溝渠18、第二溝渠20、第三溝渠22和第四溝渠24內部分之N型功函數層50，使得在第一溝渠18、第二溝渠20、第三溝渠22和第四溝渠24內的金屬層52凸出於N型功函數層50。第三移除步驟56可以為一濕蝕刻，詳細來說，第三移除步驟56包含縮短在第一溝渠18、第二溝渠20、第三溝渠22和第四溝渠24內的N型功函數層50的兩末端，也就是移除部分的N型功函數層50，在移除N型功函數層50時緩衝層40的兩末端也會一起被縮短，而閘極介電層38的兩末端會變薄並且也會被縮短，但縮短的程度不及N型功函數層50，也就是部分的閘極介電層38也會被移除。詳細來說，第三移除步驟56之後，閘極介電層38為U型並且具有兩個末端，此兩個末端低於層間介電層16的上表面並且閘極介電層38具有兩種不同厚度。再者，在N型功函數層50的兩末端被縮短後，第一P型功函數層42、第二P型功函數層44和第三P型功函數層46可能被曝露出來，或者不被曝露出來，在第5圖中以第一P型功函數層42、第二P型功函數層44和第三P型功函數層46不被曝露出來為例。在第三移除步驟56時，部分的金屬層52也會被移除，造成金屬層52表面被圓化(rounding)，因此在第三移除步驟56完成後在第一溝渠內18的金屬層52形成一第一閘極電極58，並且第一閘極電極58由側視方向來看具有一子彈形輪廓 60；第二溝渠20內的金屬層52形成一第二閘極電極62，並且第二閘極電極62由側視方向來看具有一第一洋菇形輪廓64；第三溝渠22內的金屬層52形成一第三閘極電極66，並且第三閘極電極66由側視方向來看具有一第二洋菇形輪廓68；第四溝渠24內的金屬層52形成一第四閘極電極70，並且第四閘極電極70由側視方向來看具有一第三洋菇形輪廓72。
因為第一溝渠18內沒有P型功函數層，所以第一閘極電極58的下半部形狀不會向內縮，而第二閘極電極62、第三閘極電極66和第四閘極電極70的下半部形狀都因為P型功函數層，所以都向內縮。舉例而言，子彈形輪廓60由一第一拱形60a和一第一矩形60b構成，在第5圖中以虛線界定出第一拱形60a和第一矩形60b之交界，第一拱形60a之底部和第一矩形60b之長邊接觸，第一拱形60a之底部的長度等於第一矩形60b之長邊的長度。而第一洋菇形輪廓64由一第二拱形64a和一第二矩形64b構成，在第5圖中以虛線界定出第二拱形64a和第二矩形64b之交界，第二拱形64a之底部和第二矩形64b之長邊接觸，第二拱形64a之底部的長度大於第二矩形64b之長邊的長度。此外，因為第一P型功函數層42、第二P型功函數層44和第三P型功函數層46的厚薄不同，第一洋菇形輪廓64、第二洋菇形輪廓68和第三洋菇形輪廓72細部輪廓也不同，舉例而言，第二洋菇形輪廓68由一第三拱形68a和一第三矩形68b構成，在第5圖中以虛線界定出第三拱形68a和第三矩形68b之交界，第三拱形68a之底部和第三矩形68b之長邊接觸，第三矩形68b之長邊的長度大於第二矩形64b之長邊的長度。第三洋菇形輪廓72由一第四拱形72a和一第四矩形72b構成，在第5圖中以虛線界定出第四拱形72a和第四矩形72b之交界，第四拱形72a之底部和第四矩形72b之長邊接觸，第二矩形64b之長邊的長度大於第四矩形72b之長邊的長度。此外第三矩形68b之短邊的長度大於第二矩形64b之短邊的長度，第二矩形64b之短邊的長度大於第四矩形72b之短邊的長度。
如第6圖所示，形成一上蓋層74填入第一溝渠18、第二溝渠20、第三溝渠22和第四溝渠24。至此本發明的閘極結構100業已完成。接著形成一層間介電層76覆蓋層間介電層16，之後利用自對準接觸(self-aligned contact,SAC)技術形成導電插塞78接觸各個源極/汲極摻雜區26/28/30/32。
根據本發明之另一較佳實施例，如第7圖所示，第三移除步驟56可以持續進行將N型功函數層50的兩末端縮短至曝露出第一P型功函數層42、第二P型功函數層44和第三P型功函數層46，之後再填入上蓋層74，然後再形成層間介電層76和導電插塞78。
第6圖為根據本發明之一較佳實施例所繪示的一種閘極結構100。如第6圖所示，本發明的閘極結構，包含一基底10劃分為一N型電晶體區12和一P型電晶體區14，一層間介電層16覆蓋基底10，一第一N型閘極結構80和一第二N型閘極結構82設置於N型電晶體區12，一第一P型閘極結構86和一第二P型閘極結構88設置於P型電晶體區14，第一N型閘極結構80包含一第一溝渠18埋入層間介電層16，一第一閘極電極58設置於第一溝渠18內，第一閘極電極58由側視方向來看具有一子彈形輪廓60，一閘極介電層38接觸第一溝渠18，一N型功函數層50設置於閘極介電層38和第一閘極電極58之間，一緩衝層40設置於N型功函數層50和閘極介電層38之間，一上蓋層74覆蓋第一閘極電極58。第一P型閘極結構86包含一第二溝渠20埋入層間介電層16，一第二閘極電極62設置於第二溝渠20內，第二閘極電極62由側視方向來看具有一第一洋菇形輪廓64，閘極介電層38接觸第二溝渠20，N型功函數層50設置於閘極介電層38和第二閘極電極62之間，一第一P型功函數層42設置於閘極介電層38和N型功函數層50之間，緩衝層40設置於第一P型功函數層42和閘極介電層38之間，上蓋層74覆蓋第二閘極電極62。第二N型閘極結構82包含一第三溝渠22埋入層間介電層16，一第三閘極電極66設置於第三溝渠22內，第三閘極電極66由側視方向來看具有一第二洋菇形輪廓 68，閘極介電38接觸第三溝渠22，N型功函數層50設置於閘極介電層38和第三閘極電極38之間，一第二P型功函數層44設置於閘極介電層38和N型功函數層50之間，緩衝層40設置於第二P型功函數層44和閘極介電層38之間，上蓋層74覆蓋第三閘極電極66。第二P型閘極結構88包含一第四溝渠24埋入層間介電層16，一第四閘極電極70設置於第四溝渠24內，第四閘極電極70由側視方向來看具有一第三洋菇形輪廓72，閘極介電層38接觸第四溝渠，N型功函數層50設置於閘極介電層38和第四閘極電極70之間，一第三P型功函數層46設置於閘極介電層38和N型功函數層50之間，緩衝層40設置於第三P型功函數層46和閘極介電層38之間，上蓋層74覆蓋第四閘極電極70。值得注意的是第三P型功函數層46的厚度大於第一P型功函數層42的厚度，第一P型功函數層42的厚度大於第二P型功函數層44的厚度。此外第一N型閘極結構80內沒有設置任何P型功函數層。第一P型功函數層42、第二P型功函數層44和第三P型功函數層46為相同材料，第一P型功函數層42和N型功函數層50為不同材料。另外，第一洋菇形輪廓64具有一高度H和一寬度W，高度H是寬度W的1.48至3.12倍，同樣地第二洋菇形輪廓68和第三洋菇形輪廓72的高度也是寬度的1.48至3.12倍。
本發明在第一移除步驟時特意將P型功函數層移除較多，使得剩餘的P型功函數層只覆蓋溝渠的小部分的下部，因此後續所製作出的金屬閘極可以有比較大的表面積，也因此可以降低金屬閘極的片電阻。以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
10:基底
12:N型電晶體區
14:P型電晶體區
16:層間介電層
18:第一溝渠
20:第二溝渠
22:第三溝渠
24:第四溝渠
26:源極/汲極摻雜區
28:源極/汲極摻雜區
30:源極/汲極摻雜區
32:源極/汲極摻雜區
34:側壁子
36:蝕刻停止層
38:閘極介電層
40:緩衝層
42:第一P型功函數層
44:第二P型功函數層
46:第三P型功函數層
50:N型功函數層
56:第三移除步驟
58:第一閘極電極
60:子彈形輪廓
60a:第一拱形
60b:第一矩形
62:第二閘極電極
64:第一洋菇形輪廓
64a:第二拱形
64b:第二矩形
66:第三閘極電極
68:第二洋菇形輪廓
68a:第三拱形
68b:第三矩形
70:第四閘極電極
72:第三洋菇形輪廓
72a:第四拱形
72b:第四矩形

Claims (12)

  1. 一種閘極結構，包含：一基底劃分為一N型電晶體區和一P型電晶體區；一層間介電層覆蓋該基底；一第一N型閘極結構設置於該N型電晶體區，該第一N型閘極結構包含：一第一溝渠埋入該層間介電層；一第一閘極電極設置於該第一溝渠內，該第一閘極電極由側視方向來看具有一子彈形輪廓；一閘極介電層接觸該第一溝渠，其中該閘極介電層為U型並且具有兩個末端，該等末端低於該層間介電層的上表面並且該閘極介電層具有兩種不同厚度；一N型功函數層設置於該閘極介電層和該第一閘極電極之間；一第一P型閘極結構設置於該P型電晶體區，該第一P型閘極結構包含：一第二溝渠埋入該層間介電層；一第二閘極電極設置於該第二溝渠內，該第二閘極電極由側視方向來看具有一第一洋菇形輪廓；該閘極介電層接觸該第二溝渠；該N型功函數層設置於該閘極介電層和該第二閘極電極之間；以及一第一P型功函數層設置於該閘極介電層和該N型功函數層之間。
  2. 如請求項1所述之閘極結構，另包含：一第二N型閘極結構設置於該N型電晶體區，該第二N型閘極結構包含：一第三溝渠埋入該層間介電層；一第三閘極電極設置於該第三溝渠內，該第三閘極電極由側視方向來看 具有一第二洋菇形輪廓；該閘極介電層接觸該第三溝渠；該N型功函數層設置於該閘極介電層和該第三閘極電極之間；一第二P型功函數層設置於該閘極介電層和該N型功函數層之間；一第二P型閘極結構設置於該P型電晶體區，該第二P型閘極結構包含：一第四溝渠埋入該層間介電層；一第四閘極電極設置於該第四溝渠內，該第四閘極電極由側視方向來看具有一第三洋菇形輪廓；該閘極介電層接觸該第四溝渠；該N型功函數層設置於該閘極介電層和該第四閘極電極之間；以及一第三P型功函數層設置於該閘極介電層和該N型功函數層之間，其中該第三P型功函數層的厚度大於該第一P型功函數層的厚度，該第一P型功函數層的厚度大於該第二P型功函數層的厚度。
  3. 如請求項1所述之閘極結構，其中該子彈形輪廓由一第一拱形和一第一矩形構成，該第一拱形之底部和該第一矩形之長邊接觸，該第一拱形之底部的長度等於該第一矩形之長邊的長度。
  4. 如請求項1所述之閘極結構，其中該第一洋菇形輪廓由一第二拱形和一第二矩形構成，該第二拱形之底部和該第二矩形之長邊接觸，該第二拱形之底部的長度大於該第二矩形之長邊的長度。
  5. 如請求項2所述之閘極結構，其中該第一洋菇形輪廓由一第二拱形和一第二矩形構成，該第二拱形之底部和該第二矩形之長邊接觸，該第二洋菇 形輪廓由一第三拱形和一第三矩形構成，該第三拱形之底部和該第三矩形之長邊接觸，該第三矩形之長邊的長度大於該第二矩形之長邊的長度。
  6. 如請求項1所述之閘極結構，其中該第一N型閘極結構內沒有設置P型功函數層。
  7. 如請求項1所述之閘極結構，其中該第一P型功函數層、該第二P型功函數層和該第三P型功函數層為相同材料，該第一P型功函數層和該N型功函數層為不同材料。
  8. 一種閘極結構的製作方法，包含：提供一基底劃分為一N型電晶體區和一P型電晶體區，一層間介電層覆蓋該N型電晶體區和該P型電晶體區，一第一溝渠設置於該N型電晶體區的該層間介電層中，一第二溝渠設置於該P型電晶體區的該層間介電層中，一閘極介電層覆蓋該第一溝渠和該第二溝渠；形成一P型功函數層覆蓋該第二溝渠；進行一第一移除步驟，以去除覆蓋在該第二溝渠之上部的該P型功函數層；在該第一移除步驟之後，形成一N型功函數層覆蓋該第一溝渠和該第二溝渠；形成一金屬層於該第一溝渠和該第二溝渠的該N型功函數層上；進行一第二移除步驟，以移除部分之該閘極介電層、部分之該金屬層、部分之該N型功函數層使得該閘極介電層之最高表面、該金屬層之最高表面和該N型功函數層之最高表面低於該層間介電層之上表面；以及進行一第三移除步驟，移除部分之該N型功函數層以及部分之該閘極介電層，使得該金屬層凸出於該N型功函數層，並且在該第一溝渠中的該金屬層由側視方 向來看形成一子彈形輪廓，在該第二溝渠中的該金屬層由側視方向來看形成一洋菇形輪廓，以及使得該閘極介電層為U型並且具有兩個末端，該等末端低於該層間介電層的上表面以及該閘極介電層具有兩種不同厚度。
  9. 如請求項8所述之一種閘極結構的製作方法，另包含：在該第三移除步驟之後，形成一上蓋層填入該第一溝渠和該第二溝渠。
  10. 如請求項8所述之一種閘極結構的製作方法，其中在該第一移除步驟後，該P型功函數層的最高表面和該基底的上表面有一距離，該第二溝渠具有一深度，該深度為該距離的5至25倍。
  11. 如請求項8所述之一種閘極結構的製作方法，其中該子彈形輪廓由一第一拱形和一第一矩形構成，該第一拱形之底部和該第一矩形之長邊接觸，該第一拱形之底部的長度等於該第一矩形之長邊的長度。
  12. 如請求項8所述之一種閘極結構的製作方法，其中該洋菇形輪廓由一第二拱形和一第二矩形構成，該第二拱形之底部和該第二矩形之長邊接觸，該第二拱形之底部的長度大於該第二矩形之長邊的長度。
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