TWI790512B - Storage control method and storage system - Google Patents

Storage control method and storage system Download PDF

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TWI790512B
TWI790512B TW109144211A TW109144211A TWI790512B TW I790512 B TWI790512 B TW I790512B TW 109144211 A TW109144211 A TW 109144211A TW 109144211 A TW109144211 A TW 109144211A TW I790512 B TWI790512 B TW I790512B
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storage
data
storage area
cache buffer
available capacity
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TW202225982A (en
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黃意中
傅子瑜
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宏碁股份有限公司
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Abstract

A storage control method and a storage system are disclosed. The method includes: detecting a usage status of a cache buffer region of a storage device; determining a write target region to be a first storage region of the storage device or a second storage region of the storage device according to the usage status of the cache buffer region; if the write target region is determined to be the first storage region, storing a first data from a host system to the first storage region with a buffering of the cache buffer region; and if the write target region is determined to be the second storage region, storing a second data from the host system to the first storage region without the buffering of the cache buffer region.

Description

儲存控制方法與儲存系統Storage control method and storage system

本發明是有關於一種儲存控制技術,且特別是有關於一種儲存控制方法與儲存系統。The present invention relates to a storage control technology, and in particular to a storage control method and a storage system.

隨著記憶體儲存技術的演進,固態硬碟(Solid State Drive, SSD)的使用也越來越普及。一般來說,固態硬碟中會配置有快取區與儲存區。屬於快取區的記憶胞的資料存取速度較快,但每一個記憶胞的儲存容量較小。反之,屬於儲存區的記憶胞的資料存取速度較慢,但每一個記憶胞的儲存容量較大。因此,當快取區的容量被用盡時,若資料被持續儲存至固態硬碟中,則此資料勢必被改為儲存至固態硬碟的儲存區,從而導致資料的儲存速度大幅下降。With the evolution of memory storage technology, the use of Solid State Drive (SSD) is becoming more and more popular. Generally, a solid state drive is configured with a cache area and a storage area. The data access speed of memory cells belonging to the cache area is faster, but the storage capacity of each memory cell is smaller. On the contrary, the data access speed of the memory cells belonging to the storage area is relatively slow, but the storage capacity of each memory cell is relatively large. Therefore, when the capacity of the cache area is exhausted, if the data is continuously stored in the solid-state hard disk, the data must be changed to be stored in the storage area of the solid-state hard disk, thereby causing the data storage speed to drop significantly.

本發明提供一種儲存控制方法與儲存系統,可提高儲存裝置的資料存取效率。The invention provides a storage control method and a storage system, which can improve the data access efficiency of a storage device.

本發明的實施例提供一種儲存控制方法,包括:偵測儲存裝置的快取緩衝區的使用狀態;根據所述快取緩衝區的所述使用狀態將寫入目標區決定為所述儲存裝置的第一儲存區或所述儲存裝置的第二儲存區,其中所述快取緩衝區的資料寫入速度高於所述第二儲存區的資料寫入速度,且所述第二儲存區的所述資料寫入速度高於所述第一儲存區的資料寫入速度;若所述寫入目標區被決定為所述第一儲存區,將來自主機系統的第一資料經由所述快取緩衝區的緩存後儲存至所述第一儲存區;以及若所述寫入目標區被決定為所述第二儲存區,不經由所述快取緩衝區的緩存而將來自所述主機系統的第二資料儲存至所述第二儲存區。An embodiment of the present invention provides a storage control method, including: detecting the use status of the cache buffer of the storage device; determining the write target area as the storage device according to the use status of the cache buffer The first storage area or the second storage area of the storage device, wherein the data writing speed of the cache buffer is higher than the data writing speed of the second storage area, and all the data writing speeds of the second storage area The data writing speed is higher than the data writing speed of the first storage area; if the write target area is determined to be the first storage area, the first data from the host system will be buffered through the cache stored in the first storage area; and if the write target area is determined to be the second storage area, the first storage area from the host system is not passed through the cache of the cache buffer The second data is stored in the second storage area.

本發明的實施例另提供一種儲存系統,其包括主機系統與儲存裝置。所述儲存裝置耦接至所述主機系統並具有快取緩衝區、第一儲存區及第二儲存區。所述主機系統用以偵測所述快取緩衝區的使用狀態。所述主機系統更用以根據所述快取緩衝區的所述使用狀態將寫入目標區決定為所述第一儲存區或所述第二儲存區。所述快取緩衝區的資料寫入速度高於所述第二儲存區的資料寫入速度。所述第二儲存區的所述資料寫入速度高於所述第一儲存區的資料寫入速度。若所述寫入目標區被決定為所述第一儲存區,所述儲存裝置用以將來自所述主機系統的第一資料經由所述快取緩衝區的緩存後儲存至所述第一儲存區。若所述寫入目標區被決定為所述第二儲存區,所述儲存裝置更用以不經由所述快取緩衝區的緩存而將來自所述主機系統的第二資料儲存至所述第二儲存區。An embodiment of the present invention further provides a storage system, which includes a host system and a storage device. The storage device is coupled to the host system and has a cache buffer, a first storage area and a second storage area. The host system is used to detect the usage status of the cache buffer. The host system is further configured to determine the write target area as the first storage area or the second storage area according to the usage status of the cache buffer. The data writing speed of the cache buffer is higher than the data writing speed of the second storage area. The data writing speed of the second storage area is higher than the data writing speed of the first storage area. If the write target area is determined to be the first storage area, the storage device is used to store the first data from the host system in the first storage after passing through the cache of the cache buffer district. If the write target area is determined to be the second storage area, the storage device is further configured to store the second data from the host system in the second storage area without going through the cache of the cache buffer Two storage areas.

基於上述,根據儲存裝置的快取緩衝區的使用狀態,寫入目標區可動態地被決定為儲存裝置的第一儲存區或儲存裝置的第二儲存區。若所述寫入目標區被決定為所述第一儲存區,來自主機系統的第一資料可經由所述快取緩衝區的緩存後儲存至所述第一儲存區。然而,若所述寫入目標區被決定為所述第二儲存區,則在不經由所述快取緩衝區的緩存之前提下,將來自所述主機系統的第二資料可被儲存至所述第二儲存區。其中所述快取緩衝區的資料寫入速度高於所述第二儲存區的資料寫入速度,且所述第二儲存區的所述資料寫入速度高於所述第一儲存區的資料寫入速度。藉此,可有效提高儲存裝置的資料儲存效率。Based on the above, according to the usage state of the cache buffer of the storage device, the write target area can be dynamically determined as the first storage area of the storage device or the second storage area of the storage device. If the write target area is determined to be the first storage area, the first data from the host system can be stored in the first storage area after being cached in the cache buffer. However, if the write target area is determined to be the second storage area, the second data from the host system can be stored in the second storage area without going through the cache of the cache buffer. the second storage area. Wherein the data writing speed of the cache buffer is higher than the data writing speed of the second storage area, and the data writing speed of the second storage area is higher than the data writing speed of the first storage area write speed. Thereby, the data storage efficiency of the storage device can be effectively improved.

圖1是根據本發明的一實施例所繪示的儲存系統的功能方塊圖。請參照圖1,儲存系統包括儲存裝置10與主機系統11。主機系統11耦接至儲存裝置10並可將資料儲存至儲存裝置10中或從儲存裝置10中讀取資料。FIG. 1 is a functional block diagram of a storage system according to an embodiment of the present invention. Referring to FIG. 1 , the storage system includes a storage device 10 and a host system 11 . The host system 11 is coupled to the storage device 10 and can store data into the storage device 10 or read data from the storage device 10 .

主機系統11包括連接界面111與處理器112。連接界面111耦接至處理器112。連接界面111用以連接儲存裝置10。主機系統11可藉由連接界面111與儲存裝置10通訊。例如,連接界面111可符合相容於序列先進附件(Serial Advanced Technology Attachment, SATA)標準、高速周邊零件連接界面(Peripheral Component Interconnect Express, PCI Express)標準、或通用序列匯流排(Universal Serial Bus, USB)標準等連接界面標準,本發明不加以限制。The host system 11 includes a connection interface 111 and a processor 112 . The connection interface 111 is coupled to the processor 112 . The connection interface 111 is used for connecting the storage device 10 . The host system 11 can communicate with the storage device 10 through the connection interface 111 . For example, the connection interface 111 may be compatible with the Serial Advanced Technology Attachment (SATA) standard, the high-speed peripheral component connection interface (Peripheral Component Interconnect Express, PCI Express) standard, or the Universal Serial Bus (Universal Serial Bus, USB ) standards and other connection interface standards, the present invention is not limited.

處理器112可控制主機系統11的部分或整體操作。例如,處理器112可包括中央處理單元(CPU)、或是其他可程式化之一般用途或特殊用途的微處理器、數位訊號處理器(Digital Signal Processor, DSP)、可程式化控制器、特殊應用積體電路(Application Specific Integrated Circuits, ASIC)、可程式化邏輯裝置(Programmable Logic Device, PLD)或其他類似裝置或這些裝置的組合。The processor 112 can control a part or the whole operation of the host system 11 . For example, the processor 112 may include a central processing unit (CPU), or other programmable general-purpose or special-purpose microprocessors, digital signal processors (Digital Signal Processor, DSP), programmable controllers, special Application Specific Integrated Circuits (ASIC), Programmable Logic Device (Programmable Logic Device, PLD) or other similar devices or a combination of these devices.

儲存裝置10包括連接界面101、控制器102、儲存模組103及儲存模組104。連接界面101用以連接主機系統11。儲存裝置10可藉由連接界面101與主機系統11通訊。例如,連接界面111亦可符合SATA標準、PCI Express標準或USB標準等連接界面標準,本發明不加以限制。The storage device 10 includes a connection interface 101 , a controller 102 , a storage module 103 and a storage module 104 . The connection interface 101 is used for connecting the host system 11 . The storage device 10 can communicate with the host system 11 through the connection interface 101 . For example, the connection interface 111 may also conform to connection interface standards such as SATA standard, PCI Express standard, or USB standard, which is not limited in the present invention.

控制器102耦接至連接界面101、儲存模組103及儲存模組104。控制器102用以控制儲存模組103與儲存模組104。此外,控制器102也可控制儲存裝置10的整體或部分運作。例如,控制器102可包括中央處理單元(CPU)、或是其他可程式化之一般用途或特殊用途的微處理器、數位訊號處理器(DSP)、可程式化控制器、特殊應用積體電路(ASIC)、可程式化邏輯裝置(PLD)或其他類似裝置或這些裝置的組合。The controller 102 is coupled to the connection interface 101 , the storage module 103 and the storage module 104 . The controller 102 is used for controlling the storage module 103 and the storage module 104 . In addition, the controller 102 can also control the entire or partial operations of the storage device 10 . For example, the controller 102 may include a central processing unit (CPU), or other programmable general-purpose or special-purpose microprocessors, digital signal processors (DSP), programmable controllers, application-specific integrated circuits (ASIC), programmable logic device (PLD) or other similar devices or a combination of these devices.

儲存模組103用以儲存主機系統11所寫入之資料。須注意的是,儲存模組103中的儲存單元(亦稱為記憶胞)是藉由電壓(亦稱為臨界電壓)之改變來儲存資料。例如,儲存模組103可包括固態硬碟(SSD)或類似的快閃記憶體模組。The storage module 103 is used for storing data written by the host system 11 . It should be noted that the storage unit (also called memory cell) in the storage module 103 stores data by changing the voltage (also called threshold voltage). For example, the storage module 103 may include a solid state drive (SSD) or similar flash memory module.

在一實施例中,儲存模組103可包括單階胞(single level cell, SLC)NAND型快閃記憶體模組(即,一個記憶胞可儲存1個位元的快閃記憶體模組)、多階胞(multi level cell, MLC)NAND型快閃記憶體模組(即,一個記憶胞可儲存2個位元的快閃記憶體模組)、三階胞(triple level cell, TLC)NAND型快閃記憶體模組(即,一個記憶胞可儲存3個位元的快閃記憶體模組)、四階胞(quad level cell, QLC)NAND型快閃記憶體模組(即,一個記憶胞可儲存4個位元的快閃記憶體模組)及/或其他類型的快閃記憶體模組。In one embodiment, the storage module 103 may include a single level cell (single level cell, SLC) NAND flash memory module (that is, a flash memory module in which one memory cell can store 1 bit) , Multi-level cell (MLC) NAND flash memory module (that is, a memory cell can store 2 bits of flash memory module), triple level cell (TLC) NAND-type flash memory module (that is, a memory cell that can store 3 bits of flash memory module), quad level cell (quad level cell, QLC) NAND-type flash memory module (that is, A memory cell can store 4-bit flash memory modules) and/or other types of flash memory modules.

儲存模組103包括快取緩衝區1031與儲存區(亦稱為第一儲存區)1032。快取緩衝區1031與儲存區1032分別包括多個記憶胞。此些記憶胞的每一者可被程式化以改變其臨界電壓以儲存相應的位元(亦稱為資料位元)。快取緩衝區1031中的單一個記憶胞可用以儲存n個資料位元。儲存區中的單一個記憶胞可用以儲存m個資料位元。n與m皆為正整數,且m大於n。例如,n可為1,且m可為2、3或4。The storage module 103 includes a cache buffer 1031 and a storage area (also called a first storage area) 1032 . The cache buffer 1031 and the storage area 1032 respectively include a plurality of memory cells. Each of these memory cells can be programmed to change its threshold voltage to store a corresponding bit (also called a data bit). A single memory cell in the cache buffer 1031 can store n data bits. A single memory cell in the storage area can be used to store m data bits. Both n and m are positive integers, and m is greater than n. For example, n can be 1 and m can be 2, 3 or 4.

在一實施例中,快取緩衝區1031中的記憶胞是以虛擬SLC(pSLC)程式化模式來儲存資料,而儲存區1032中的記憶胞是以TLC程式化模式來儲存資料。在此實施例中,快取緩衝區1031中的單一個記憶胞可用以儲存1個資料位元(即n=1),而儲存區1032中的單一個記憶胞可用以儲存3個資料位元(即m=3)。In one embodiment, the memory cells in the cache buffer 1031 store data in a virtual SLC (pSLC) programming mode, and the memory cells in the storage area 1032 store data in a TLC programming mode. In this embodiment, a single memory cell in the cache buffer 1031 can be used to store 1 data bit (ie n=1), and a single memory cell in the storage area 1032 can be used to store 3 data bits (i.e. m=3).

在一實施例中,快取緩衝區1031中的記憶胞是以pSLC程式化模式來儲存資料,而儲存區1032中的記憶胞是以QLC程式化模式來儲存資料。在此實施例中,快取緩衝區1031中的單一個記憶胞可用以儲存1個資料位元(即n=1),而儲存區1032中的單一個記憶胞可用以儲存4個資料位元(即m=4)。依此類推,n與m的數值可根據所採用的程式化模式而調整,只要符合m大於n之規範即可。In one embodiment, the memory cells in the cache buffer 1031 store data in the pSLC programming mode, and the memory cells in the storage area 1032 store data in the QLC programming mode. In this embodiment, a single memory cell in the cache buffer 1031 can be used to store 1 data bit (ie n=1), and a single memory cell in the storage area 1032 can be used to store 4 data bits (ie m=4). By analogy, the values of n and m can be adjusted according to the stylized mode adopted, as long as it meets the specification that m is greater than n.

儲存模組104也可用以儲存主機系統11所寫入之資料。例如,儲存模組104包括儲存區(亦稱為第二儲存區)1041。儲存區1041包含多個儲存單元。然而,須注意的是,相異於儲存模組103,儲存模組104中的儲存單元是藉由磁性之改變來儲存資料。例如,儲存模組104可包括機械硬碟(Hard disk drive, HDD)(亦稱為傳統硬碟或硬碟驅動器)。The storage module 104 can also be used to store data written by the host system 11 . For example, the storage module 104 includes a storage area (also referred to as a second storage area) 1041 . The storage area 1041 includes a plurality of storage units. However, it should be noted that, different from the storage module 103, the storage unit in the storage module 104 stores data through magnetic changes. For example, the storage module 104 may include a mechanical hard disk (Hard disk drive, HDD) (also called a traditional hard disk or hard disk drive).

基於快取緩衝區1031、儲存區1032及儲存區1041對於儲存單元的使用方式之差異及/或先天上的物理性差異,快取緩衝區1031的資料寫入速度(或寫入頻寬)可高於儲存區1041的資料寫入速度(或寫入頻寬),且儲存區1041的資料寫入速度(或寫入頻寬)可高於儲存區1032的資料寫入速度(或寫入頻寬)。例如,在一實施例中,快取緩衝區1031的平均資料寫入速度可約為1GB/s,儲存區1041的平均資料寫入速度可約為140MB/s,而儲存區1032的平均資料寫入速度可約為30~50MB/s。Based on the differences and/or inherent physical differences between the cache buffer 1031, the storage area 1032, and the storage area 1041 for the use of storage units, the data writing speed (or write bandwidth) of the cache buffer 1031 may vary. The data writing speed (or writing bandwidth) of the storage area 1041 is higher than the data writing speed (or writing bandwidth) of the storage area 1041, and the data writing speed (or writing bandwidth) of the storage area 1041 can be higher than the data writing speed (or writing frequency) of the storage area 1032 Width). For example, in one embodiment, the average data writing speed of the cache buffer 1031 may be about 1GB/s, the average data writing speed of the storage area 1041 may be about 140MB/s, and the average data writing speed of the storage area 1032 The input speed can be about 30~50MB/s.

在一實施例中,主機系統11的處理器112可偵測快取緩衝區1031的使用狀態。例如,快取緩衝區1031的使用狀態可反映快取緩衝區1031中當前的可用容量(亦稱為剩餘容量)。例如,假設快取緩衝區1031的總容量為2GB。在快取緩衝區1031儲存了1.5GB的有效資料的狀態下,快取緩衝區1031的可用容量約為0.5GB。換言之,若當前儲存於快取緩衝區1031中的有效資料越多,則快取緩衝區1031中當前的可用容量越小。反之,若當前儲存於快取緩衝區1031中的有效資料越少,則快取緩衝區1031中當前的可用容量越大。In one embodiment, the processor 112 of the host system 11 can detect the usage status of the cache buffer 1031 . For example, the usage status of the cache buffer 1031 may reflect the current available capacity (also referred to as remaining capacity) in the cache buffer 1031 . For example, assume that the total capacity of the cache buffer 1031 is 2GB. When the cache buffer 1031 stores 1.5 GB of valid data, the available capacity of the cache buffer 1031 is about 0.5 GB. In other words, the more valid data currently stored in the cache buffer 1031 , the smaller the current available capacity in the cache buffer 1031 . Conversely, if the valid data currently stored in the cache buffer 1031 is less, the current available capacity in the cache buffer 1031 is larger.

在一實施例中,儲存裝置10的控制器102可持續更新快取緩衝區1031的使用狀態。此外,控制器102可發送通知訊息至主機系統11。此通知訊息可反映快取緩衝區1031的使用狀態。換言之,主機系統11的處理器112可根據此通知訊息得知快取緩衝區1031的使用狀態(例如快取緩衝區1031當前的可用容量)。In one embodiment, the controller 102 of the storage device 10 can continuously update the usage status of the cache buffer 1031 . In addition, the controller 102 can send a notification message to the host system 11 . The notification message can reflect the usage status of the cache buffer 1031 . In other words, the processor 112 of the host system 11 can know the usage status of the cache buffer 1031 (eg, the current available capacity of the cache buffer 1031 ) according to the notification message.

在一實施例中,處理器112可根據快取緩衝區1031的使用狀態將一個寫入目標區決定為儲存區1032與儲存區1041的其中之一。例如,此目標寫入區可指示來自主機系統的資料(即待儲存資料)的目標寫入位置(或目標寫入磁碟)。處理器112可將所決定的寫入目標區設定至儲存裝置10中的一個管理表格。爾後,控制器102可查詢此管理表格以根據當前設定的寫入目標區來儲存來自主機系統11的資料。In one embodiment, the processor 112 may determine a write target area as one of the storage area 1032 and the storage area 1041 according to the usage status of the cache buffer 1031 . For example, the target writing area may indicate the target writing location (or target writing disk) of the data (ie, the data to be stored) from the host system. The processor 112 can set the determined write target area to a management table in the storage device 10 . Afterwards, the controller 102 can query the management table to store the data from the host system 11 according to the currently set writing target area.

在一實施例中,假設寫入目標區被決定為儲存區1032。在寫入目標區為儲存區1032的狀態下,控制器102可將來自主機系統11的資料(亦稱為第一資料)經由快取緩衝區1031的緩存後儲存至儲存區1032。In one embodiment, it is assumed that the write target area is determined as the storage area 1032 . When the writing target area is the storage area 1032 , the controller 102 can store the data (also referred to as first data) from the host system 11 to the storage area 1032 after being cached in the cache buffer 1031 .

在一實施例中,假設寫入目標區被決定為儲存區1041。在寫入目標區為儲存區1041的狀態下,控制器102可在不經由快取緩衝區1031的緩存之前提下,將來自主機系統11的資料(亦稱為第二資料)直接儲存至儲存區1041。In one embodiment, it is assumed that the write target area is determined as the storage area 1041 . In the state where the write target area is the storage area 1041, the controller 102 can directly store the data (also called the second data) from the host system 11 to the storage area without going through the cache of the cache buffer 1031. District 1041.

在一實施例中,處理器112可根據快取緩衝區1031的可用容量來將寫入目標區決定為儲存區1032與儲存區1041的其中之一。在一實施例中,處理器112可判斷快取緩衝區1031的可用容量是否大於某一門檻值(亦稱為第一門檻值)。若快取緩衝區1031的可用容量大於第一門檻值,處理器112可將寫入目標區決定為儲存區1032。反之,若快取緩衝區1031的可用容量不大於第一門檻值,處理器112可不調整寫入目標區,亦即,將寫入目標區維持於當前的儲存區1032與儲存區1041的其中之一。In one embodiment, the processor 112 may determine the write target area as one of the storage area 1032 and the storage area 1041 according to the available capacity of the cache buffer 1031 . In one embodiment, the processor 112 may determine whether the available capacity of the cache buffer 1031 is greater than a certain threshold (also referred to as a first threshold). If the available capacity of the cache buffer 1031 is greater than the first threshold, the processor 112 may determine the write target area as the storage area 1032 . On the contrary, if the available capacity of the cache buffer 1031 is not greater than the first threshold value, the processor 112 may not adjust the write target area, that is, maintain the write target area at one of the current storage area 1032 and the storage area 1041 one.

在一實施例中,處理器112可判斷快取緩衝區1031的可用容量是否小於另一門檻值(亦稱為第二門檻值)。若快取緩衝區1031的可用容量小於第二門檻值,處理器112可將寫入目標區決定為儲存區1041。反之,若快取緩衝區1031的可用容量不小於第二門檻值,處理器112可不調整寫入目標區,亦即,將寫入目標區維持於當前的儲存區1032與儲存區1041的其中之一。In one embodiment, the processor 112 may determine whether the available capacity of the cache buffer 1031 is smaller than another threshold (also referred to as a second threshold). If the available capacity of the cache buffer 1031 is smaller than the second threshold, the processor 112 may determine the write target area as the storage area 1041 . Conversely, if the available capacity of the cache buffer 1031 is not less than the second threshold value, the processor 112 may not adjust the write target area, that is, maintain the write target area at one of the current storage area 1032 and the storage area 1041 one.

在一實施例中,第一門檻值可約為快取緩衝區1031的總容量的80%~90%,而第二門檻值可約為快取緩衝區1031的總容量的10%~20%。在一實施例中,第一門檻值與第二門檻值皆可以是其他數值,只要符合第一門檻值大於第二門檻值之規範即可。In one embodiment, the first threshold may be about 80%-90% of the total capacity of the cache buffer 1031, and the second threshold may be about 10%-20% of the total capacity of the cache buffer 1031 . In an embodiment, both the first threshold and the second threshold can be other values, as long as the first threshold is greater than the second threshold.

圖2是根據本發明的一實施例所繪示的寫入目標區為第一儲存區的狀態下儲存資料之路徑的示意圖。請參照圖2,控制器102可從主機系統11接收資料201。在寫入目標區為儲存區1032(即第一儲存區)的狀態下,控制器102可先將資料201緩存至快取緩衝區1031。例如,資料201可藉由pSLC程式化模式儲存於快取緩衝區1031中。稍後,控制器102可執行一個資料整理操作,以藉由此資料整理操作將資料201複製到儲存區1032,進行較長時間的保存。例如,資料201可藉由TLC或QLC程式化模式儲存於儲存區1032中。FIG. 2 is a schematic diagram of a path for storing data in a state where the writing target area is the first storage area according to an embodiment of the present invention. Referring to FIG. 2 , the controller 102 can receive data 201 from the host system 11 . When the writing target area is the storage area 1032 (namely the first storage area), the controller 102 can cache the data 201 in the cache buffer 1031 first. For example, the data 201 can be stored in the cache buffer 1031 by pSLC programming mode. Later, the controller 102 can execute a data sorting operation, so as to copy the data 201 to the storage area 1032 through the data sorting operation for a longer period of storage. For example, the data 201 can be stored in the storage area 1032 by TLC or QLC programming mode.

須注意的是,在資料整理操作中,快取緩衝區1031中的m個實體單元(或記憶胞)中的有效資料可被集中複製到儲存區1032中的n個實體單元(或記憶胞)中進行儲存。例如,假設一個實體單元為一個實體頁、n=1且m=4,則快取緩衝區1031中的四個實體頁中的有效資料可被集中複製到儲存區1032中的一個實體頁進行儲存。爾後,快取緩衝區1031中的這四個實體頁中的資料可被標記為無效並且等待被抹除。在這四個實體頁被抹除後,這四個實體頁的儲存空間即可被視為快取緩衝區1031的一部分的可用容量。換言之,在一實施例中,控制器102可藉由資料整理操作來減少快取緩衝區1031中的有效資料的資料量並增加快取緩衝區1031的可用容量。It should be noted that, in the data sorting operation, valid data in the m physical units (or memory cells) in the cache buffer 1031 can be collectively copied to the n physical units (or memory cells) in the storage area 1032 to store in. For example, assuming that a physical unit is a physical page, n=1 and m=4, the valid data in the four physical pages in the cache buffer 1031 can be collectively copied to one physical page in the storage area 1032 for storage . Thereafter, the data in the four physical pages in the cache buffer 1031 can be marked as invalid and waiting to be erased. After the four physical pages are erased, the storage space of the four physical pages can be regarded as a part of the available capacity of the cache buffer 1031 . In other words, in one embodiment, the controller 102 can reduce the amount of valid data in the cache buffer 1031 and increase the available capacity of the cache buffer 1031 through the data sorting operation.

圖3是根據本發明的一實施例所繪示的寫入目標區為第二儲存區的狀態下儲存資料之路徑的示意圖。請參照圖3,控制器102可從主機系統11接收資料301。在寫入目標區為儲存區1041(即第二儲存區)的狀態下,控制器102可直接將資料301儲存至儲存區1041以進行長時間保存。特別是,在寫入目標區為儲存區1041的狀態下,資料301在儲存至儲存區1041之前,並不需要緩存至快取緩衝區1031,如圖3所示。FIG. 3 is a schematic diagram of a path for storing data in a state where the writing target area is the second storage area according to an embodiment of the present invention. Referring to FIG. 3 , the controller 102 can receive data 301 from the host system 11 . When the writing target area is the storage area 1041 (ie, the second storage area), the controller 102 can directly store the data 301 in the storage area 1041 for long-term preservation. In particular, when the writing target area is the storage area 1041 , the data 301 does not need to be cached in the cache buffer 1031 before being stored in the storage area 1041 , as shown in FIG. 3 .

須注意的是,圖2的實施例所示的資料寫入路徑是快取緩衝區1031的可用容量較為充足(例如快取緩衝區1031的可用容量大於第一門檻值或介於第一門檻值與第二門檻值之間)的情況下的資料寫入路徑。在此狀態下,對於主機系統11而言,資料(例如資料201)的寫入速度可約為快取緩衝區1031的平均資料寫入速度(例如1GB/s)。It should be noted that the data writing path shown in the embodiment of FIG. 2 is that the available capacity of the cache buffer 1031 is relatively sufficient (for example, the available capacity of the cache buffer 1031 is greater than or between the first threshold and the second threshold value) in the case of the data writing path. In this state, for the host system 11 , the writing speed of the data (for example, the data 201 ) can be about the average data writing speed of the cache buffer 1031 (for example, 1 GB/s).

然而,圖3的實施例所示的資料寫入路徑則是快取緩衝區1031的可用容量較為不足(例如快取緩衝區1031的可用容量小於第二門檻值或介於第一門檻值與第二門檻值之間)的情況下的資料寫入路徑。在此狀態下,對於主機系統11而言,資料(例如資料301)的寫入速度仍可約略維持於儲存區1041的平均資料寫入速度(例如140MB/s)。However, the data writing path shown in the embodiment of FIG. 3 is that the available capacity of the cache buffer 1031 is relatively insufficient (for example, the available capacity of the cache buffer 1031 is less than the second threshold value or between the first threshold value and the second threshold value. The data writing path in the case of between two thresholds). In this state, for the host system 11 , the writing speed of the data (for example, the data 301 ) can still be roughly maintained at the average data writing speed of the storage area 1041 (for example, 140MB/s).

在一實施例中,在快取緩衝區1031的可用容量較為不足甚至完全用盡的狀態下,若未將寫入目標區調整為儲存區1041(即寫入目標區持續被設定為儲存區1032),則控制器102會略過快取緩衝區1031而直接以TLC或QLC程式化模式將資料儲存至儲存區1032。此時,對於主機系統11而言,資料的寫入速度可能會降到儲存區1032的平均資料寫入速度(例如30~50MB/s)。換言之,此時主機系統11可能會明顯偵測到儲存裝置10的寫入速度大幅下降,進而造成不良的使用體驗。然而,藉由圖2與圖3的實施例之控制機制,即可有效避免此狀況發生。In one embodiment, when the available capacity of the cache buffer 1031 is relatively insufficient or even completely used up, if the write target area is not adjusted to the storage area 1041 (that is, the write target area is continuously set to the storage area 1032 ), the controller 102 skips the cache buffer 1031 and directly stores the data in the storage area 1032 in TLC or QLC programming mode. At this time, for the host system 11 , the data writing speed may drop to the average data writing speed of the storage area 1032 (for example, 30-50 MB/s). In other words, at this time, the host system 11 may obviously detect that the writing speed of the storage device 10 has dropped significantly, thereby causing a bad user experience. However, this situation can be effectively avoided by the control mechanism of the embodiment shown in FIG. 2 and FIG. 3 .

在一實施例中,在快取緩衝區1031(或儲存模組103)的閒置狀態下(例如寫入目標區為儲存區1041的狀態下及/或在控制器102直接將資料301儲存至儲存區1041的期間),控制器102可對快取緩衝區1031執行前述資料整理操作,以增加快取緩衝區1031的可用容量。在增加快取緩衝區1031的可用容量後,當符合預設條件(例如快取緩衝區1031的可用容量大於第一門檻值)時,處理器112可再次將寫入目標區調整為儲存區1032,從而提高後續資料的寫入速度。In one embodiment, when the cache buffer 1031 (or the storage module 103) is in an idle state (for example, when the write target area is the storage area 1041 and/or the controller 102 directly stores the data 301 to the storage area 1041 ), the controller 102 may perform the aforementioned data collation operation on the cache buffer 1031 to increase the available capacity of the cache buffer 1031 . After increasing the available capacity of the cache buffer 1031, when a preset condition is met (for example, the available capacity of the cache buffer 1031 is greater than the first threshold value), the processor 112 can adjust the write target area to the storage area 1032 again , so as to increase the writing speed of subsequent data.

在一實施例中,儲存裝置10同時具有固態硬碟(例如儲存模組103)與機械硬碟(例如儲存模組104)。因此,在一實施例中,儲存裝置10亦可稱為混合硬碟或複合式硬碟。In one embodiment, the storage device 10 has both a solid state disk (such as the storage module 103 ) and a mechanical hard disk (such as the storage module 104 ). Therefore, in an embodiment, the storage device 10 may also be called a hybrid hard disk or a composite hard disk.

圖4是根據本發明的一實施例所繪示的儲存控制方法的流程圖。請參照圖4,在步驟S401中,偵測儲存裝置的快取緩衝區的使用狀態。在步驟S402中,根據所述快取緩衝區的所述使用狀態將寫入目標區決定為所述儲存裝置的第一儲存區或所述儲存裝置的第二儲存區,其中所述快取緩衝區的資料寫入速度高於所述第二儲存區的資料寫入速度,且所述第二儲存區的所述資料寫入速度高於所述第一儲存區的資料寫入速度。若所述寫入目標區被決定為所述第一儲存區,在步驟S403中,將來自主機系統的第一資料經由所述快取緩衝區的緩存後儲存至所述第一儲存區。若所述寫入目標區被決定為所述第二儲存區,在步驟S404中,不經由所述快取緩衝區的緩存而將來自所述主機系統的第二資料儲存至所述第二儲存區。FIG. 4 is a flowchart of a storage control method according to an embodiment of the invention. Referring to FIG. 4 , in step S401 , the usage status of the cache buffer of the storage device is detected. In step S402, the write target area is determined as the first storage area of the storage device or the second storage area of the storage device according to the usage status of the cache buffer, wherein the cache buffer The data writing speed of the area is higher than the data writing speed of the second storage area, and the data writing speed of the second storage area is higher than the data writing speed of the first storage area. If the write target area is determined to be the first storage area, in step S403, the first data from the host system is stored in the first storage area after being cached in the cache buffer. If the write target area is determined to be the second storage area, in step S404, store the second data from the host system in the second storage area without going through the cache of the cache buffer district.

圖5是根據本發明的一實施例所繪示的儲存控制方法的流程圖。請參照圖5,在步驟S501中,偵測儲存裝置的快取緩衝區的可用容量。在步驟S502中,判斷快取緩衝區的可用容量是否大於第一門檻值。若快取緩衝區的可用容量大於第一門檻值,在步驟S503中,將寫入目標區決定為所述儲存裝置的第一儲存區。在步驟S504中,將來自主機系統的第一資料經由所述快取緩衝區的緩存後儲存至所述第一儲存區。FIG. 5 is a flow chart of a storage control method according to an embodiment of the invention. Please refer to FIG. 5 , in step S501 , the available capacity of the cache buffer of the storage device is detected. In step S502, it is determined whether the available capacity of the cache buffer is greater than a first threshold. If the available capacity of the cache buffer is larger than the first threshold, in step S503, the write target area is determined as the first storage area of the storage device. In step S504, the first data from the host system is stored in the first storage area after being cached in the cache buffer.

若快取緩衝區的可用容量不大於第一門檻值,在步驟S505中,判斷快取緩衝區的可用容量是否小於第二門檻值。若快取緩衝區的可用容量小於第二門檻值,在步驟S506中,將寫入目標區決定為所述儲存裝置的第二儲存區。在步驟S507中,不經由所述快取緩衝區的緩存而將來自所述主機系統的第二資料儲存至所述第二儲存區。此外,若於步驟S505中判定快取緩衝區的可用容量不小於第二門檻值,則可不調整當前設定的寫入目標區(即維持當前的寫入目標區之設定)。If the available capacity of the cache buffer is not greater than the first threshold, in step S505, it is determined whether the available capacity of the cache buffer is less than the second threshold. If the available capacity of the cache buffer is smaller than the second threshold, in step S506, the write target area is determined as the second storage area of the storage device. In step S507, the second data from the host system is stored in the second storage area without going through the cache of the cache buffer. In addition, if it is determined in step S505 that the available capacity of the cache buffer is not less than the second threshold value, then the currently set write target area may not be adjusted (that is, the current write target area setting is maintained).

然而,圖4與圖5中各步驟已詳細說明如上,在此便不再贅述。值得注意的是,圖4與圖5中各步驟可以實作為多個程式碼或是電路,本發明不加以限制。此外,圖4與圖5的方法可以搭配以上範例實施例使用,也可以單獨使用,本發明不加以限制。However, each step in FIG. 4 and FIG. 5 has been described in detail above, and will not be repeated here. It should be noted that each step in FIG. 4 and FIG. 5 can be implemented as a plurality of program codes or circuits, which is not limited by the present invention. In addition, the methods shown in FIG. 4 and FIG. 5 can be used together with the above exemplary embodiments, or can be used alone, which is not limited by the present invention.

綜上所述,儲存裝置中的寫入目標區可根據其快取緩衝區的使用狀態而動態地被決定為第一儲存區或第二儲存區。若寫入目標區被決定為第一儲存區,來自主機系統的第一資料可經由快取緩衝區的緩存後儲存至第一儲存區。然而,若寫入目標區被決定為第二儲存區,則來自所述主機系統的第二資料可不經由快取緩衝區的緩存而直接儲存至所述第二儲存區。藉此,可有效改善傳統上因固態硬碟(或快閃記憶體)的快取區被用盡而導致儲存裝置的資料儲存速度大幅下降的問題及/或提高儲存裝置的資料存取效率。To sum up, the write target area in the storage device can be dynamically determined as the first storage area or the second storage area according to the usage status of its cache buffer. If the write-in target area is determined as the first storage area, the first data from the host system can be stored in the first storage area after being cached in the cache buffer. However, if the write target area is determined to be the second storage area, the second data from the host system can be directly stored in the second storage area without going through the cache of the cache buffer. In this way, the traditional problem of greatly reducing the data storage speed of the storage device due to the exhaustion of the cache area of the solid-state hard disk (or flash memory) can be effectively improved and/or the data access efficiency of the storage device can be improved.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.

10:儲存裝置 11:主機系統 101, 111:連接界面 112:處理器 10:儲存裝置 102:控制器 103, 104:儲存模組 1031:快取緩衝區 1032, 1041:儲存區 201, 301:資料 S401~S404, S501~S507:步驟 10: storage device 11: Host system 101, 111: connection interface 112: Processor 10: storage device 102: Controller 103, 104: storage module 1031: cache buffer 1032, 1041: storage area 201, 301: Information S401~S404, S501~S507: steps

圖1是根據本發明的一實施例所繪示的儲存系統的功能方塊圖。 圖2是根據本發明的一實施例所繪示的寫入目標區為第一儲存區的狀態下儲存資料之路徑的示意圖。 圖3是根據本發明的一實施例所繪示的寫入目標區為第二儲存區的狀態下儲存資料之路徑的示意圖。 圖4是根據本發明的一實施例所繪示的儲存控制方法的流程圖。 圖5是根據本發明的一實施例所繪示的儲存控制方法的流程圖。 FIG. 1 is a functional block diagram of a storage system according to an embodiment of the present invention. FIG. 2 is a schematic diagram of a path for storing data in a state where the writing target area is the first storage area according to an embodiment of the present invention. FIG. 3 is a schematic diagram of a path for storing data in a state where the writing target area is the second storage area according to an embodiment of the present invention. FIG. 4 is a flowchart of a storage control method according to an embodiment of the invention. FIG. 5 is a flow chart of a storage control method according to an embodiment of the invention.

S401~S404:步驟 S401~S404: steps

Claims (10)

一種儲存控制方法,包括:偵測一儲存裝置的一快取緩衝區的一可用容量;響應於該可用容量大於第一門檻值,將來自一主機系統的一第一資料經由該快取緩衝區的緩存後儲存至該儲存裝置的第一儲存區;以及響應於該可用容量小於第二門檻值,不經由該快取緩衝區的緩存而將來自該主機系統的一第二資料儲存至該儲存裝置的第二儲存區,其中該快取緩衝區的資料寫入速度高於該第二儲存區的資料寫入速度,且該第二儲存區的該資料寫入速度高於該第一儲存區的資料寫入速度。 A storage control method, comprising: detecting an available capacity of a cache buffer of a storage device; in response to the available capacity being greater than a first threshold, passing a first data from a host system through the cache buffer and store a second data from the host system in the storage without going through the cache of the cache buffer in response to the available capacity being less than a second threshold A second storage area of the device, wherein the data writing speed of the cache buffer is higher than the data writing speed of the second storage area, and the data writing speed of the second storage area is higher than that of the first storage area data writing speed. 如請求項1所述的儲存控制方法,更包括:響應於該可用容量大於該第一門檻值,將一寫入目標區決定為該第一儲存區;以及響應於該可用容量小於該第二門檻值,將該寫入目標區決定為該第二儲存區,其中該第一門檻值大於該第二門檻值。 The storage control method as described in claim 1, further comprising: in response to the available capacity being greater than the first threshold value, determining a write target area as the first storage area; and in response to the available capacity being smaller than the second A threshold value is used to determine the writing target area as the second storage area, wherein the first threshold value is greater than the second threshold value. 如請求項1所述的儲存控制方法,更包括:由該儲存裝置發送一通知訊息至該主機系統,其中該通知訊息反映該快取緩衝區的使用狀態。 The storage control method as described in Claim 1 further includes: sending a notification message from the storage device to the host system, wherein the notification message reflects the usage status of the cache buffer. 如請求項1所述的儲存控制方法,更包括: 響應於該可用容量小於該第二門檻值,在將來自該主機系統的該第二資料儲存至該第二儲存區的期間,對該快取緩衝區執行一資料整理操作,以增加該快取緩衝區的該可用容量。 The storage control method as described in claim 1, further comprising: In response to the available capacity being less than the second threshold, during the period of storing the second data from the host system in the second storage area, performing a data defragmentation operation on the cache buffer to increase the cache The available capacity of the buffer. 如請求項1所述的儲存控制方法,其中該快取緩衝區與該第一儲存區中的儲存單元是藉由電壓之改變來儲存資料,而該第二儲存區中的儲存單元是藉由磁性之改變來儲存資料。 The storage control method as described in claim 1, wherein the storage unit in the cache buffer and the first storage area stores data by changing the voltage, and the storage unit in the second storage area stores data by changing the voltage. Magnetic changes to store data. 一種儲存系統,包括:一主機系統;以及一儲存裝置,耦接至該主機系統並具有一快取緩衝區、一第一儲存區及一第二儲存區,其中該主機系統用以偵測該快取緩衝區的一可用容量,響應於該可用容量大於第一門檻值,該儲存裝置用以將來自該主機系統的一第一資料經由該快取緩衝區的緩存後儲存至該第一儲存區,響應於該可用容量小於第二門檻值,該儲存裝置更用以不經由該快取緩衝區的緩存而將來自該主機系統的一第二資料儲存至該第二儲存區,並且該快取緩衝區的資料寫入速度高於該第二儲存區的資料寫入速度,且該第二儲存區的該資料寫入速度高於該第一儲存區的資料寫入速度。 A storage system, comprising: a host system; and a storage device coupled to the host system and having a cache buffer, a first storage area and a second storage area, wherein the host system is used to detect the An available capacity of the cache buffer, in response to the available capacity being greater than a first threshold, the storage device is used to store a first data from the host system into the first storage after passing through the cache of the cache buffer area, in response to the available capacity being less than a second threshold value, the storage device is further configured to store a second data from the host system in the second storage area without going through the cache of the cache buffer, and the cache The data writing speed of the fetch buffer is higher than the data writing speed of the second storage area, and the data writing speed of the second storage area is higher than the data writing speed of the first storage area. 如請求項6所述的儲存系統,其中:響應於該可用容量大於該第一門檻值,該儲存裝置更用以將 一寫入目標區決定為該第一儲存區;以及響應於該可用容量小於該第二門檻值,該儲存裝置更用以將該寫入目標區決定為該第二儲存區,其中該第一門檻值大於該第二門檻值。 The storage system as claimed in claim 6, wherein: in response to the available capacity being greater than the first threshold, the storage device is further configured to A write target area is determined as the first storage area; and in response to the available capacity being less than the second threshold value, the storage device is further used to determine the write target area as the second storage area, wherein the first The threshold value is greater than the second threshold value. 如請求項6所述的儲存系統,其中該儲存裝置更用以發送一通知訊息至該主機系統,且該通知訊息反映該快取緩衝區的使用狀態。 The storage system according to claim 6, wherein the storage device is further configured to send a notification message to the host system, and the notification message reflects the usage status of the cache buffer. 如請求項6所述的儲存系統,其中響應於該可用容量小於該第二門檻值,在將來自該主機系統的該第二資料儲存至該第二儲存區的期間,該儲存裝置更用以對該快取緩衝區執行一資料整理操作,以增加該快取緩衝區的該可用容量。 The storage system as claimed in claim 6, wherein in response to the available capacity being less than the second threshold value, during storing the second data from the host system in the second storage area, the storage device is further used for A data cleaning operation is performed on the cache buffer to increase the available capacity of the cache buffer. 如請求項6所述的儲存系統,其中該快取緩衝區與該第一儲存區中的儲存單元是藉由電壓之改變來儲存資料,而該第二儲存區中的儲存單元是藉由磁性之改變來儲存資料。 The storage system according to claim 6, wherein the cache buffer and the storage units in the first storage area store data by changing the voltage, and the storage units in the second storage area store data by magnetic Changes to store data.
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