TWI768829B - Parameter adjusting method for a memory device and a memory storage system - Google Patents

Parameter adjusting method for a memory device and a memory storage system Download PDF

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TWI768829B
TWI768829B TW110113468A TW110113468A TWI768829B TW I768829 B TWI768829 B TW I768829B TW 110113468 A TW110113468 A TW 110113468A TW 110113468 A TW110113468 A TW 110113468A TW I768829 B TWI768829 B TW I768829B
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memory device
parameter
parameter adjustment
adjustment command
host system
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TW202240575A (en
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侯冠宇
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宏碁股份有限公司
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00Energy efficient computing, e.g. low power processors, power management or thermal management

Abstract

A parameter adjusting method for a memory device and a memory storage device are disclosed. The method includes: sending a parameter adjusting command to the memory device to instruct the memory device to adjust at least one system parameter according to the parameter adjusting command. The at least one system parameter influences a behavior of at least one default operation performed by the memory device. The memory device does not adjust the at least one system parameter without receiving of the parameter adjusting command.

Description

記憶體裝置的參數調整方法與記憶體儲存系統Parameter adjustment method of memory device and memory storage system

本發明是有關於一種記憶體裝置的控制技術,且特別是有關於一種記憶體裝置的參數調整方法與記憶體儲存系統。The present invention relates to a control technology of a memory device, and more particularly, to a method for adjusting parameters of a memory device and a memory storage system.

記憶體裝置(例如快閃記憶體裝置)具有資料非揮發性、省電、體積小,以及無機械結構等特性,故越來越頻繁地被使用於電腦等各式電子裝置中。一般來說,在記憶體裝置出廠前,開發人員都會預先在記憶體裝置中設定好多個系統參數。每一個系統參數對應一或多個預設操作。但是,在記憶體裝置出廠後,記憶體裝置本身往往無法根據當下的需求(例如所耦接的主機系統的類型或工作狀態)而對此些系統參數進行修改。特別是,在某些情況下,使用預設的系統參數可能會導致記憶體裝置與主機系統進行協同運作時的效能下降,甚至可能導致記憶體裝置與主機系統之間出現相容性問題。Memory devices (eg, flash memory devices) have the characteristics of non-volatile data, power saving, small size, and no mechanical structure, so they are more and more frequently used in various electronic devices such as computers. Generally speaking, developers will pre-set a number of system parameters in the memory device before the memory device leaves the factory. Each system parameter corresponds to one or more preset operations. However, after the memory device leaves the factory, the memory device itself often cannot modify these system parameters according to the current requirements (eg, the type or working state of the coupled host system). In particular, in some cases, the use of the default system parameters may result in a decrease in performance when the memory device and the host system cooperate with each other, and may even cause compatibility problems between the memory device and the host system.

本發明提供一種記憶體裝置的參數調整方法與記憶體儲存系統,可提高記憶體裝置的運作效能。The present invention provides a parameter adjustment method of a memory device and a memory storage system, which can improve the operation performance of the memory device.

本發明的實施例提供一種記憶體裝置的參數調整方法,其用於主機系統。所述主機系統耦接至所述記憶體裝置。所述參數調整方法包括:發送參數調整指令至所述記憶體裝置,以指示所述記憶體裝置根據所述參數調整指令調整至少一系統參數。所述至少一系統參數影響所述記憶體裝置執行至少一預設操作的行為。所述記憶體裝置不在未接收到所述參數調整指令的情況下自行調整所述至少一系統參數。Embodiments of the present invention provide a method for adjusting parameters of a memory device, which is used in a host system. The host system is coupled to the memory device. The parameter adjustment method includes: sending a parameter adjustment command to the memory device to instruct the memory device to adjust at least one system parameter according to the parameter adjustment command. The at least one system parameter affects the behavior of the memory device to perform at least one predetermined operation. The memory device does not adjust the at least one system parameter by itself without receiving the parameter adjustment command.

本發明的實施例另提供一種記憶體儲存系統,其包括主機系統與記憶體裝置。所述記憶體裝置耦接至所述主機系統。所述主機系統用以發送參數調整指令至所述記憶體裝置。所述記憶體裝置用以根據所述參數調整指令調整至少一系統參數並根據所述至少一系統參數執行至少一預設操作。所述至少一系統參數影響所述記憶體裝置執行所述至少一預設操作的行為。所述記憶體裝置不在未接收到所述參數調整指令的情況下自行調整所述至少一系統參數。Embodiments of the present invention further provide a memory storage system, which includes a host system and a memory device. The memory device is coupled to the host system. The host system is used for sending a parameter adjustment command to the memory device. The memory device is used for adjusting at least one system parameter according to the parameter adjustment instruction and executing at least one preset operation according to the at least one system parameter. The at least one system parameter affects the behavior of the memory device to perform the at least one predetermined operation. The memory device does not adjust the at least one system parameter by itself without receiving the parameter adjustment command.

基於上述,主機系統可根據當下的狀態或需求,來下達參數調整指令至記憶體裝置,以指示記憶體裝置對記憶體裝置本身無法調整或未達到修改條件的至少一系統參數進行調整,進而影響後續記憶體裝置執行至少一預設操作時的行為。藉此,可提高記憶體裝置的運作效能。Based on the above, the host system can issue a parameter adjustment command to the memory device according to the current state or demand, so as to instruct the memory device to adjust at least one system parameter that the memory device itself cannot adjust or does not meet the modification conditions, thereby affecting the Behavior when the subsequent memory device performs at least one predetermined operation. Thereby, the operation performance of the memory device can be improved.

圖1是根據本發明的一實施例所繪示的記憶體儲存系統的示意圖。請參照圖1,記憶體儲存系統10包括主機系統11與記憶體裝置12。主機系統11可將資料儲存至記憶體裝置12中,或從記憶體裝置12中讀取資料。例如,主機系統11為可實質地與記憶體裝置12配合以儲存資料的任意系統,例如,電腦系統、數位相機、攝影機、通訊裝置、音訊播放器、視訊播放器或平板電腦等,而記憶體裝置12則可為隨身碟、記憶卡、固態硬碟(Solid State Drive, SSD)、安全數位(Secure Digital, SD)卡、小型快閃(Compact Flash, CF)卡或嵌入式儲存裝置等各式非揮發性記憶體裝置。FIG. 1 is a schematic diagram of a memory storage system according to an embodiment of the present invention. Referring to FIG. 1 , the memory storage system 10 includes a host system 11 and a memory device 12 . The host system 11 can store data in the memory device 12 or read data from the memory device 12 . For example, host system 11 is any system that can substantially cooperate with memory device 12 to store data, such as a computer system, digital camera, video camera, communication device, audio player, video player, or tablet, etc., while memory The device 12 can be a flash drive, a memory card, a Solid State Drive (SSD), a Secure Digital (SD) card, a Compact Flash (CF) card, or an embedded storage device. Non-volatile memory device.

在一實施例中,主機系統11可包括連接介面111、處理器112及輸入/輸出介面113。連接介面111用以耦接至記憶體裝置12並與記憶體裝置12通訊。例如,主機系統11可經由連接介面111將資料傳輸至記憶體裝置12或從記憶體裝置12接收資料。In one embodiment, the host system 11 may include a connection interface 111 , a processor 112 and an input/output interface 113 . The connection interface 111 is used for coupling to and communicating with the memory device 12 . For example, the host system 11 may transmit data to or receive data from the memory device 12 via the connection interface 111 .

處理器112耦接至連接介面111。處理器112可負責主機系統11的整體或部分運作。例如,處理器112可包括中央處理單元(CPU)或是其他可程式化之一般用途或特殊用途的微處理器、數位訊號處理器(Digital Signal Processor, DSP)、可程式化控制器、特殊應用積體電路(Application Specific Integrated Circuits, ASIC)、可程式化邏輯裝置(Programmable Logic Device, PLD)或其他類似裝置或這些裝置的組合。The processor 112 is coupled to the connection interface 111 . The processor 112 may be responsible for all or part of the operation of the host system 11 . For example, the processor 112 may include a central processing unit (CPU) or other programmable general-purpose or special-purpose microprocessors, digital signal processors (DSPs), programmable controllers, application-specific Integrated circuits (Application Specific Integrated Circuits, ASIC), Programmable Logic Devices (Programmable Logic Device, PLD) or other similar devices or combinations of these devices.

輸入/輸出介面113耦接至處理器112。處理器112可包含任何實務上所需的訊號輸入/輸出裝置,例如網路介面卡、滑鼠、鍵盤、觸控板、螢幕及/或揚聲器等等。The input/output interface 113 is coupled to the processor 112 . The processor 112 may include any practically required signal input/output devices, such as a network interface card, a mouse, a keyboard, a touchpad, a screen and/or speakers, and the like.

在一實施例中,記憶體裝置12包括連接介面121、記憶體控制器122及記憶體模組123。連接介面121用以連接主機系統11的連接介面111並經由連接介面111與主機系統11通訊。例如,連接介面111與121可符合序列先進附件(Serial Advanced Technology Attachment, SATA)、並列先進附件(Parallel Advanced Technology Attachment, PATA)、高速周邊零件連接介面(Peripheral Component Interconnect Express, PCI Express)或通用序列匯流排(Universal Serial Bus, USB)等各式連接介面標準。在一實施例中,連接介面111與121符合NVM Express (NVMe)規範。In one embodiment, the memory device 12 includes a connection interface 121 , a memory controller 122 and a memory module 123 . The connection interface 121 is used to connect to the connection interface 111 of the host system 11 and communicate with the host system 11 via the connection interface 111 . For example, the connection interfaces 111 and 121 may conform to Serial Advanced Technology Attachment (SATA), Parallel Advanced Technology Attachment (PATA), Peripheral Component Interconnect Express (PCI Express) or general serial Various connection interface standards such as Universal Serial Bus (USB). In one embodiment, the connection interfaces 111 and 121 conform to the NVM Express (NVMe) specification.

記憶體控制器122耦接至連接介面121與記憶體模組123。記憶體控制器122用以執行以硬體型式或韌體型式實作的多個邏輯閘或控制指令並且可根據主機系統11的指令在記憶體模組123中進行資料的寫入、讀取與抹除等運作。此外,記憶體控制器122也可控制記憶體裝置12的整體運作。在一實施例中,記憶體控制器122亦稱為快閃記憶體控制器。The memory controller 122 is coupled to the connection interface 121 and the memory module 123 . The memory controller 122 is used to execute a plurality of logic gates or control commands implemented in a hardware type or a firmware type, and can perform data writing, reading and writing in the memory module 123 according to the instructions of the host system 11 . Erase, etc. In addition, the memory controller 122 can also control the overall operation of the memory device 12 . In one embodiment, the memory controller 122 is also referred to as a flash memory controller.

記憶體模組123用以儲存主機系統11所寫入之資料。例如,記憶體模組123可包括單階胞(Single Level Cell, SLC)NAND型快閃記憶體模組(即,一個記憶胞可儲存1個位元的快閃記憶體模組)、多階胞(Multi Level Cell, MLC)NAND型快閃記憶體模組(即,一個記憶胞可儲存2個位元的快閃記憶體模組)、三階胞(Triple Level Cell, TLC)NAND型快閃記憶體模組(即,一個記憶胞可儲存3個位元的快閃記憶體模組)及/或四階胞(Quad Level Cell, QLC)NAND型快閃記憶體模組(即,一個記憶胞可儲存4個位元的快閃記憶體模組)。例如,記憶體模組123中的記憶胞是以臨界電壓的改變來儲存資料。在一實施例中,記憶體模組123亦稱為快閃記憶體模組。The memory module 123 is used for storing data written by the host system 11 . For example, the memory module 123 may include a single-level cell (SLC) NAND-type flash memory module (ie, a flash memory module in which one memory cell can store 1 bit), a multi-level Multi Level Cell (MLC) NAND flash memory modules (ie, a memory cell can store 2-bit flash memory modules), Triple Level Cell (TLC) NAND flash memory modules Flash memory modules (ie, one memory cell can store 3-bit flash memory modules) and/or Quad Level Cell (QLC) NAND-type flash memory modules (ie, one The memory cells can store 4-bit flash memory modules). For example, the memory cells in the memory module 123 store data based on changes in threshold voltages. In one embodiment, the memory module 123 is also referred to as a flash memory module.

記憶體模組123包括多個實體單元。每一個實體單元可包括多個記憶胞。例如,一個實體單元可包括一或多個實體頁、一或多個實體區塊或者一或多個其他的記憶胞管理單元。屬於同一個實體頁的記憶胞可以被同時程式化以儲存資料。屬於同一個實體區塊的記憶胞可被同時抹除以清除資料。The memory module 123 includes a plurality of physical units. Each physical unit may include multiple memory cells. For example, a physical unit may include one or more physical pages, one or more physical blocks, or one or more other memory cell management units. Memory cells belonging to the same physical page can be programmed simultaneously to store data. Memory cells belonging to the same physical block can be erased simultaneously to clear data.

在一實施例中,記憶體模組123包括儲存區101與系統區102。儲存區101中的實體單元用以儲存來自主機系統11的資料(亦稱為使用者資料)。系統區102中的實體單元用以儲存記憶體裝置12的管理資料,例如邏輯至實體映射表、壞塊管理表及記憶體裝置12運作所需的至少部分系統參數。In one embodiment, the memory module 123 includes a storage area 101 and a system area 102 . The physical units in the storage area 101 are used to store data (also referred to as user data) from the host system 11 . The physical units in the system area 102 are used to store management data of the memory device 12 , such as a logical-to-physical mapping table, a bad block management table, and at least some system parameters required for the operation of the memory device 12 .

在一實施例中,記憶體控制器122可配置多個邏輯單元來映射儲存區101中的實體單元。例如,一個邏輯單元可包括一或多個邏輯區塊位址(Logical Block Address, LBA)。記憶體控制器122可將邏輯單元與實體單元之間的映射關係記載於邏輯至實體映射表。當接收到來自主機系統11的存取指令時,記憶體控制器122可根據此邏輯至實體映射表來存取相應的實體單元。在一實施例中,記憶體控制器122可不配置任何邏輯單元來映射系統區102中的實體單元,以避免系統區102中的管理資料(例如所述系統參數)意外被使用者(或主機系統11)修改。In one embodiment, the memory controller 122 may configure a plurality of logical units to map the physical units in the storage area 101 . For example, a logical unit may include one or more logical block addresses (Logical Block Address, LBA). The memory controller 122 may record the mapping relationship between the logical unit and the physical unit in the logical-to-physical mapping table. When receiving an access command from the host system 11, the memory controller 122 can access the corresponding physical unit according to the logic-to-physical mapping table. In one embodiment, the memory controller 122 may not configure any logical unit to map the physical units in the system area 102, so as to prevent the management data (such as the system parameters) in the system area 102 from being accidentally accessed by the user (or the host system) 11) Modification.

在一實施例中,記憶體控制器122可根據儲存於系統區102中的系統參數來執行至少一預設操作。此些系統參數可影響記憶體控制器122執行所述預設操作的行為,進而可能影響所述預設操作的效能。In one embodiment, the memory controller 122 can perform at least one preset operation according to system parameters stored in the system area 102 . Such system parameters may affect the behavior of the memory controller 122 to perform the preset operation, which may affect the performance of the preset operation.

在一實施例中,在記憶體裝置12出廠前,開發人員會先將儲存於系統區102中的至少部分系統參數設定為預設值。在一般情況下,記憶體控制器122不會主動修改或調整此些系統參數。In one embodiment, before the memory device 12 is shipped from the factory, the developer will first set at least some of the system parameters stored in the system area 102 to default values. In general, the memory controller 122 does not actively modify or adjust such system parameters.

在一實施例中,所述預設操作可包括電源狀態管理操作、背景資料整理操作及溫度控制操作的至少其中之一。記憶體控制器122執行電源狀態管理操作、背景資料整理操作及溫度控制操作的行為可分別受對應的系統參數影響。In one embodiment, the preset operation may include at least one of a power state management operation, a background data sorting operation, and a temperature control operation. The behavior of the memory controller 122 to perform the power state management operation, the background data cleaning operation, and the temperature control operation may be affected by corresponding system parameters, respectively.

在一實施例中,在電源狀態管理操作中,記憶體控制器122可根據系統區102中的一或多個系統參數(亦稱為第一系統參數)來調整記憶體裝置12的電源狀態。例如,調整記憶體裝置12的電源狀態包括使記憶體裝置12進入睡眠狀態。例如,第一系統參數可包括一個時間門檻值(亦稱為第一時間門檻值)。當記憶體控制器122判定記憶體模組123或記憶體裝置12的閒置時間超過此第一時間門檻值時,記憶體控制器122可調整記憶體裝置12的電源狀態,以使記憶體裝置12進入睡眠狀態。爾後,當需要正常運作時,記憶體控制器122可再次調整記憶體裝置12的電源狀態,以喚醒記憶體裝置12。In one embodiment, during power state management operations, the memory controller 122 may adjust the power state of the memory device 12 according to one or more system parameters (also referred to as first system parameters) in the system area 102 . For example, adjusting the power state of the memory device 12 includes putting the memory device 12 into a sleep state. For example, the first system parameter may include a time threshold (also referred to as a first time threshold). When the memory controller 122 determines that the idle time of the memory module 123 or the memory device 12 exceeds the first time threshold, the memory controller 122 can adjust the power state of the memory device 12 so that the memory device 12 Go to sleep. Then, when normal operation is required, the memory controller 122 can adjust the power state of the memory device 12 again to wake up the memory device 12 .

在一實施例中,在背景資料整理操作中,記憶體控制器122可根據系統區102中的一或多個系統參數(亦稱為第二系統參數)來在背景執行資料整理。例如,所述資料整理包括將有效資料從儲存區101中的某一實體單元搬移到另一實體單元進行儲存。其中,有效資料是指當前有被邏輯單元映射的資料。例如,若某一資料當前未被任何邏輯單元所映射,則此資料可被視為無效資料。例如,第二系統參數可包括一個數量門檻值。當記憶體控制器122判定記憶體模組123中可用的實體單元(亦稱為閒置實體單元)的總數小於此數量門檻值時,記憶體控制器122可在背景執行所述資料整理,以將分散於多個實體單元中的有效資料集中儲存,進而釋放出更多可用的實體單元。在一實施例中,背景資料整理操作可包括垃圾回收(garbage collection)程序或類似的資料整併程序。此外,第二系統參數亦可包括一個時間門檻值(亦稱為第二時間門檻值)。此第二時間門檻值可用以限定每一次在背景執行資料整理的一持續時間。例如,假設此第二時間門檻值為10秒,則每次啟動背景資料整理操作後,記憶體控制器122可在10秒內執行所述背景資料整理。In one embodiment, in a background data cleanup operation, the memory controller 122 may perform data cleanup in the background according to one or more system parameters (also referred to as second system parameters) in the system area 102 . For example, the data sorting includes moving valid data from a certain physical unit in the storage area 101 to another physical unit for storage. The valid data refers to the data currently mapped by the logical unit. For example, a data can be considered invalid data if it is not currently mapped by any logical unit. For example, the second system parameter may include a quantity threshold. When the memory controller 122 determines that the total number of available physical units (also referred to as idle physical units) in the memory module 123 is less than this number threshold, the memory controller 122 may perform the data sorting in the background to The effective data scattered in multiple physical units is centrally stored, thereby releasing more available physical units. In one embodiment, the background data cleaning operation may include a garbage collection process or a similar data consolidation process. In addition, the second system parameter may also include a time threshold (also referred to as a second time threshold). The second time threshold can be used to define a duration of each time data cleaning is performed in the background. For example, assuming that the second time threshold is 10 seconds, the memory controller 122 can perform the background data cleaning within 10 seconds after each start of the background data cleaning operation.

在一實施例中,在溫度控制操作中,記憶體控制器122可根據系統區102中的一或多個系統參數(亦稱為第三系統參數)來執行記憶體裝置12的溫度控制,例如,對記憶體裝置12進行降溫。例如,第三系統參數可包括一或多個溫度門檻值。當記憶體控制器122判定記憶體裝置12的溫度超過某一個溫度門檻值時,記憶體控制器122可執行至少一降溫手段,例如降低記憶體裝置12的寫入頻寬及/或時脈頻率等等,以嘗試降低記憶體裝置12的溫度。此外,更多的預設操作可以根據相應的系統參數來執行,本發明不加以限制。In one embodiment, in the temperature control operation, the memory controller 122 may perform temperature control of the memory device 12 according to one or more system parameters (also referred to as third system parameters) in the system area 102, such as , to cool the memory device 12 . For example, the third system parameter may include one or more temperature thresholds. When the memory controller 122 determines that the temperature of the memory device 12 exceeds a certain temperature threshold, the memory controller 122 can perform at least one cooling method, such as reducing the write bandwidth and/or clock frequency of the memory device 12 etc. in an attempt to reduce the temperature of the memory device 12 . In addition, more preset operations can be performed according to corresponding system parameters, which are not limited in the present invention.

在一實施例中,在記憶體裝置12出廠時,各個系統參數皆會是一個預設值。例如,此預設值是在記憶體裝置12出廠前由開發人員所設定,且理論上預設的系統參數應可滿足記憶體裝置12在多數情況下的使用需求。在記憶體裝置12出廠後,若沒有藉由韌體更新或送回原廠更新系統設定等系統更新或維修行為,記憶體裝置12並不會主動調整所述系統參數。但是,實務上,根據預設的系統參數(甚至由原廠更新後的系統參數)來執行前述各項預設操作,卻可能不符合主機系統11當前的版本、操作狀態或效能需求。In one embodiment, each system parameter is a default value when the memory device 12 is shipped from the factory. For example, the default value is set by the developer before the memory device 12 leaves the factory, and theoretically the preset system parameters should meet the usage requirements of the memory device 12 in most cases. After the memory device 12 is shipped from the factory, the memory device 12 will not actively adjust the system parameters if there is no system update or maintenance action such as firmware updating or returning to the original factory to update the system settings. However, in practice, performing the aforementioned preset operations according to the preset system parameters (even the system parameters updated by the original factory) may not meet the current version, operating status or performance requirements of the host system 11 .

在一實施例中,處理器112可發送一個參數調整指令至記憶體裝置12。此參數調整指令可用以指示記憶體裝置12根據此參數調整指令調整至少一系統參數。特別是,所調整的系統參數可影響記憶體裝置12執行至少一預設操作的行為。在接收到此參數調整指令後,記憶體控制器122可根據此參數調整指令調整相應的系統參數。經調整的系統參數可被回存到系統區102中。在一實施例中,若某一系統參數本身不支援由記憶體裝置12修改或者未達到調整此系統參數之條件,則記憶體裝置12不會在未接收到所述參數調整指令的情況下自行調整所述系統參數。In one embodiment, the processor 112 may send a parameter adjustment command to the memory device 12 . The parameter adjustment command can be used to instruct the memory device 12 to adjust at least one system parameter according to the parameter adjustment command. In particular, the adjusted system parameters may affect the behavior of the memory device 12 to perform at least one predetermined operation. After receiving the parameter adjustment command, the memory controller 122 can adjust the corresponding system parameters according to the parameter adjustment command. The adjusted system parameters may be stored back into the system area 102 . In one embodiment, if a system parameter itself does not support modification by the memory device 12 or the conditions for adjusting the system parameter are not met, the memory device 12 will not automatically adjust the parameter without receiving the parameter adjustment command. Adjust the system parameters.

在一實施例中,處理器112可發送一個參數查詢指令至記憶體裝置12。此參數查詢指令可指示記憶體裝置12回傳與所欲調整的至少一系統參數有關的狀態資訊。在接收到此參數查詢指令後,記憶體控制器122可根據此參數查詢指令將與所欲調整的至少一系統參數有關的狀態資訊傳送給主機系統11。然後,處理器112可根據此狀態資訊發送所述參數調整指令至記憶體裝置12。In one embodiment, the processor 112 may send a parameter query command to the memory device 12 . The parameter query command can instruct the memory device 12 to return status information related to at least one system parameter to be adjusted. After receiving the parameter query command, the memory controller 122 can transmit status information related to at least one system parameter to be adjusted to the host system 11 according to the parameter query command. Then, the processor 112 can send the parameter adjustment command to the memory device 12 according to the status information.

在一實施例中,假設所欲調整的系統參數包括第一參數,則與第一參數有關的狀態資訊可反映第一參數的當前參數值、第一參數的預設參數值、第一參數的替代參數值及第一參數是否可被調整的至少其中之一。第一參數的當前參數值是指第一參數被單次設定的參數值。例如,在記憶體裝置12下次開機時,第一參數的當前參數值可被回復為第一參數的預設參數值。或者,若第一參數的替代參數值已被設定,則在記憶體裝置12下次開機時,第一參數的當前參數值可被回復為第一參數的替代參數值。第一參數的預設參數值是指第一參數的預設值。第一參數的替代參數值是指第一參數非單次設定的參數值。換言之,此第一參數的替代參數值可用以多次、長期或永久取代第一參數的預設參數值。此外,第一參數是否可被調整之資訊可反映第一參數是否可被調整。若第一參數可被調整,則主機系統11可藉由所述參數調整指令來指示記憶體裝置12調整第一參數。反之,若第一參數不可被調整,則主機系統11無法藉由所述參數調整指令來指示記憶體裝置12調整第一參數。在一實施例中,若第一參數不可被調整,則當接收到指示調整第一參數的參數調整指令時,記憶體裝置12可忽略此參數調整指令而不對第一參數進行調整。在一實施例中,處理器112只會針對可調整的第一參數進行調整。In one embodiment, assuming that the system parameter to be adjusted includes the first parameter, the state information related to the first parameter may reflect the current parameter value of the first parameter, the default parameter value of the first parameter, the At least one of the replacement parameter value and whether the first parameter can be adjusted. The current parameter value of the first parameter refers to the parameter value of the first parameter that is set once. For example, when the memory device 12 is turned on next time, the current parameter value of the first parameter can be restored to the default parameter value of the first parameter. Alternatively, if the substitute parameter value of the first parameter has been set, the current parameter value of the first parameter can be restored to the substitute parameter value of the first parameter when the memory device 12 is turned on next time. The preset parameter value of the first parameter refers to the preset value of the first parameter. The substitute parameter value of the first parameter refers to the parameter value of the first parameter that is not set once. In other words, the replacement parameter value of the first parameter can be used to replace the preset parameter value of the first parameter multiple times, permanently or permanently. In addition, the information of whether the first parameter can be adjusted may reflect whether the first parameter can be adjusted. If the first parameter can be adjusted, the host system 11 can instruct the memory device 12 to adjust the first parameter through the parameter adjustment command. On the contrary, if the first parameter cannot be adjusted, the host system 11 cannot instruct the memory device 12 to adjust the first parameter through the parameter adjustment command. In one embodiment, if the first parameter cannot be adjusted, when receiving a parameter adjustment command instructing to adjust the first parameter, the memory device 12 may ignore the parameter adjustment command and not adjust the first parameter. In one embodiment, the processor 112 only adjusts the adjustable first parameter.

在一實施例中,處理器112可偵測主機系統11的系統狀態。處理器112可根據此系統狀態發送所述參數調整指令至記憶體裝置12,以提升記憶體裝置12在主機系統11的所述系統狀態下執行所述至少一預設操作的效能。例如,在一實施例中,處理器112可即時偵測主機系統11當下的溫度、忙碌程度、閒置狀態、應用程式啟動狀態、開機持續時間、作業系統版本、韌體版本、網路連接狀態及/或網路通訊品質等各種系統狀態並根據偵測結果發送所述參數調整指令,以指示記憶體裝置12對至少部分系統參數進行調整(例如最佳化)。此外,在一實施例中,處理器112也可根據遠端伺服器所下達的更新指令或更新套件來發送所述參數調整指令。In one embodiment, the processor 112 can detect the system status of the host system 11 . The processor 112 can send the parameter adjustment command to the memory device 12 according to the system state, so as to improve the performance of the memory device 12 to perform the at least one preset operation in the system state of the host system 11 . For example, in one embodiment, the processor 112 can instantly detect the current temperature, busyness, idle state, application activation state, boot duration, operating system version, firmware version, network connection state, and and/or various system states such as network communication quality and the like, and send the parameter adjustment command according to the detection result, so as to instruct the memory device 12 to adjust (eg, optimize) at least part of the system parameters. In addition, in one embodiment, the processor 112 may also send the parameter adjustment command according to the update command or the update package issued by the remote server.

例如,在一實施例中,假設主機系統11安裝某些版本的作業系統會導致連接至某些類型的記憶體裝置12時發生相容性問題。藉由調整記憶體裝置12中特定的系統參數,有機會提高主機系統11與記憶體裝置12之間的相容性。或者,在一實施例中,假設主機系統11的使用者時常不在座位(即長時間未操作主機系統11),則藉由修改記憶體裝置12中特定的系統參數(例如延長執行背景資料整理的時間),有機會提高下次使用者回來操作主機系統11時,主機系統11及/或記憶體裝置12的系統效能。在更多可能的使用情境下,都可以藉由調整記憶體裝置12的部分系統參數來提高主機系統11及/或記憶體裝置12的系統效能,在此不逐一贅述。For example, in one embodiment, it is assumed that certain versions of the operating system are installed on the host system 11 resulting in compatibility issues when connecting to certain types of memory devices 12 . By adjusting certain system parameters in the memory device 12 , there is an opportunity to improve the compatibility between the host system 11 and the memory device 12 . Alternatively, in one embodiment, assuming that the user of the host system 11 is often not at his seat (ie, the host system 11 has not been operated for a long time), by modifying specific system parameters in the memory device 12 (for example, extending the execution time of background data sorting) time), there is an opportunity to improve the system performance of the host system 11 and/or the memory device 12 when the user returns to operate the host system 11 next time. In more possible usage scenarios, the system performance of the host system 11 and/or the memory device 12 can be improved by adjusting some system parameters of the memory device 12 , which are not repeated here.

圖2是根據本發明的一實施例所繪示的發送參數調整指令來調整記憶體裝置的系統參數的示意圖。請參照圖2,在一實施例中,主機系統11具有驅動器21。驅動器21可以軟體或韌體形式實作(例如安裝)於主機系統11中並用以驅動記憶體裝置12。在一實施例中,驅動器21亦稱為快閃記憶體驅動器、儲存驅動器或SSD驅動器。FIG. 2 is a schematic diagram of adjusting system parameters of a memory device by sending a parameter adjustment command according to an embodiment of the present invention. Referring to FIG. 2 , in one embodiment, the host system 11 has a driver 21 . The driver 21 may be implemented (eg, installed) in the host system 11 in the form of software or firmware and used to drive the memory device 12 . In one embodiment, the drive 21 is also referred to as a flash memory drive, a storage drive, or an SSD drive.

在一實施例中,驅動器21可根據預設配置資訊發送參數調整指令CMD(S)(亦稱為第一參數調整指令)至記憶體裝置12。參數調整指令CMD(S)可用以指示記憶體裝置12將系統參數201中的特定參數(亦稱為第一參數)設定為特定數值(亦稱為第一數值)。例如,假設系統參數201包括參數P(1)~P(n)。記憶體控制器122可根據參數調整指令CMD(S)所夾帶的數值來對參數P(1)~P(n)中的至少一者進行設定。以參數P(1)為例,記憶體控制器122可將參數P(1)的數值設定為與參數調整指令CMD(S)所夾帶的數值相同。第一數值可不同於第一參數的預設值。In one embodiment, the driver 21 can send the parameter adjustment command CMD(S) (also referred to as the first parameter adjustment command) to the memory device 12 according to the preset configuration information. The parameter adjustment command CMD(S) can be used to instruct the memory device 12 to set a specific parameter (also referred to as a first parameter) in the system parameters 201 to a specific value (also referred to as a first value). For example, it is assumed that the system parameters 201 include parameters P(1) to P(n). The memory controller 122 can set at least one of the parameters P( 1 ) to P(n) according to the value carried by the parameter adjustment command CMD(S). Taking the parameter P(1) as an example, the memory controller 122 can set the value of the parameter P(1) to be the same as the value carried by the parameter adjustment command CMD(S). The first value may be different from the preset value of the first parameter.

在一實施例中,驅動器21可針對記憶體裝置12執行初始化。例如,當記憶體裝置12初次被連接至主機系統11時,驅動器21可針對記憶體裝置12執行初始化。在針對記憶體裝置12執行初始化的過程中,驅動器21可根據所述預設配置資訊發送參數調整指令CMD(S)至記憶體裝置12,以對系統參數201進行初始設定。In one embodiment, the driver 21 may perform initialization for the memory device 12 . For example, the driver 21 may perform initialization for the memory device 12 when the memory device 12 is first connected to the host system 11 . During the initialization process for the memory device 12 , the driver 21 may send a parameter adjustment command CMD(S) to the memory device 12 according to the preset configuration information to initially set the system parameters 201 .

圖3是根據本發明的一實施例所繪示的發送參數調整指令來調整記憶體裝置的系統參數的示意圖。請參照圖3,在一實施例中,主機系統11具有控制程式31與驅動器21。控制程式31可以軟體形式實作(例如安裝)於主機系統11中並由主機系統11的作業系統運行。FIG. 3 is a schematic diagram of adjusting system parameters of a memory device by sending a parameter adjustment command according to an embodiment of the present invention. Referring to FIG. 3 , in one embodiment, the host system 11 has a control program 31 and a driver 21 . The control program 31 may be implemented in software (eg, installed) in the host system 11 and run by the operating system of the host system 11 .

在一實施例中,驅動器21可根據控制程式31的指示而發送參數調整指令CMD(S)’(亦稱為第二參數調整指令)至記憶體裝置12。參數調整指令CMD(S)’可用以指示記憶體裝置12將系統參數201中的特定參數(例如第一參數)設定為特定數值(亦稱為第二數值)。例如,記憶體控制器122可根據參數調整指令CMD(S)’所夾帶的數值來對參數P(1)~P(n)中的至少一者進行設定。以參數P(1)為例,記憶體控制器122可將參數P(1)的數值設定為與參數調整指令CMD(S)’所夾帶的數值相同。第二數值可不同於第一參數的預設值。In one embodiment, the driver 21 can send the parameter adjustment command CMD(S)' (also referred to as the second parameter adjustment command) to the memory device 12 according to the instruction of the control program 31 . The parameter adjustment command CMD(S)' can be used to instruct the memory device 12 to set a specific parameter (such as a first parameter) in the system parameters 201 to a specific value (also referred to as a second value). For example, the memory controller 122 may set at least one of the parameters P(1)˜P(n) according to the value carried by the parameter adjustment command CMD(S)'. Taking the parameter P(1) as an example, the memory controller 122 can set the value of the parameter P(1) to be the same as the value carried by the parameter adjustment command CMD(S)'. The second value may be different from the preset value of the first parameter.

在一實施例中,參數調整指令CMD(S)(或CMD(S)’)可指示對第一參數執行單次設定或非單次設定。若參數調整指令CMD(S)(或CMD(S)’)指示對第一參數執行單次設定,則記憶體控制器122可根據CMD(S)(或CMD(S)’)來調整或修改第一參數的當前參數值。此外,若參數調整指令CMD(S)(或CMD(S)’)指示對第一參數執行非單次設定,則記憶體控制器122可根據CMD(S)(或CMD(S)’)來調整或修改第一參數的當前參數值以及第一參數的替代參數值。In one embodiment, the parameter adjustment command CMD(S) (or CMD(S)') may instruct to perform a single setting or a non-single setting for the first parameter. If the parameter adjustment command CMD(S) (or CMD(S)') instructs to perform a single setting of the first parameter, the memory controller 122 may adjust or modify according to the CMD(S) (or CMD(S)') The current parameter value of the first parameter. In addition, if the parameter adjustment command CMD(S) (or CMD(S)') instructs to perform non-single setting for the first parameter, the memory controller 122 can adjust the parameters according to CMD(S) (or CMD(S)'). Adjust or modify the current parameter value of the first parameter and the substitute parameter value of the first parameter.

在一實施例中,在某一時間點(亦稱為第一時間點),驅動器21可根據所述預設配置資訊發送參數調整指令CMD(S)至記憶體裝置12,以對系統參數201進行初始設定。例如,根據參數調整指令CMD(S),記憶體控制器122可將第一參數設定為第一數值。第一數值可不同於第一參數的預設值。例如,第一時間點包括驅動器21針對記憶體裝置12執行所述初始化的時間點。爾後,在晚於第一時間點的另一時間點(亦稱為第二時間點),驅動器21可根據控制程式31的指示而發送參數調整指令CMD(S)’至記憶體裝置12,以對系統參數201進行動態更新(亦稱為進階設定)。例如,根據參數調整指令CMD(S)’,記憶體控制器122可將第一參數設定為第二數值。第二數值可不同於第一數值。In one embodiment, at a certain time point (also referred to as the first time point), the driver 21 can send a parameter adjustment command CMD(S) to the memory device 12 according to the preset configuration information, so as to adjust the system parameter 201 Make initial settings. For example, according to the parameter adjustment command CMD(S), the memory controller 122 may set the first parameter to the first value. The first value may be different from the preset value of the first parameter. For example, the first time point includes the time point when the driver 21 performs the initialization for the memory device 12 . Then, at another time point (also referred to as a second time point) later than the first time point, the driver 21 can send the parameter adjustment command CMD(S)' to the memory device 12 according to the instruction of the control program 31 to The system parameters 201 are dynamically updated (also called advanced settings). For example, according to the parameter adjustment command CMD(S)', the memory controller 122 may set the first parameter to the second value. The second value may be different from the first value.

換言之,在一實施例中,在對系統參數201進行初始設定之後,控制程式31可持續偵測主機系統11的系統狀態。隨著主機系統11的系統狀態改變,控制程式31可根據主機系統11當下的系統狀態發送參數調整指令CMD(S)’至記憶體裝置12,以對系統參數201進行進階設定。藉由動態調整系統參數201,可嘗試提高主機系統11與記憶體裝置12進行協同運作時的系統效能。在一實施例中,若未接收到參數調整指令CMD(S)或CMD(S)’,則記憶體控制器122可不主動調整或修改系統參數201。In other words, in one embodiment, after the system parameters 201 are initially set, the control program 31 may continue to detect the system status of the host system 11 . As the system state of the host system 11 changes, the control program 31 can send the parameter adjustment command CMD(S)' to the memory device 12 according to the current system state of the host system 11 to perform advanced settings for the system parameters 201. By dynamically adjusting the system parameters 201 , an attempt can be made to improve the system performance when the host system 11 and the memory device 12 cooperate with each other. In one embodiment, if the parameter adjustment command CMD(S) or CMD(S)' is not received, the memory controller 122 may not actively adjust or modify the system parameter 201 .

圖4是根據本發明的一實施例所繪示的系統參數的調整歷程的示意圖。請參照圖2、圖3及圖4,假設參數P(1)~P(4)分別具有預設值A(0)~D(0)。預設值A(0)~D(0)例如是在記憶體裝置12出廠前由開發人員設定。FIG. 4 is a schematic diagram of an adjustment history of system parameters according to an embodiment of the present invention. Referring to FIG. 2 , FIG. 3 and FIG. 4 , it is assumed that the parameters P( 1 ) to P( 4 ) have preset values A( 0 ) to D( 0 ), respectively. The default values A(0)˜D(0) are, for example, set by developers before the memory device 12 is shipped from the factory.

在時間點T(A),驅動器21可根據預設配置資訊發送參數調整指令CMD(S),以指示記憶體控制器122將參數P(2)從數值B(0)修改為數值B(1)並將參數P(3)從數值C(0)修改為數值C(1)。爾後,在時間點T(A)之後的時間點T(B),驅動器21可根據控制程式31的指示發送參數調整指令CMD(S)’,以指示記憶體控制器122將參數P(1)從數值A(0)修改為數值A(2)、將參數P(2)從數值B(1)修改為數值B(2)並將參數P(3)從數值C(1)修改為數值C(2)。爾後,在時間點T(B)之後的時間點T(C),驅動器21可根據控制程式31的指示再次發送參數調整指令CMD(S)’,以指示記憶體控制器122將參數P(2)從數值B(2)修改為數值B(3)。At time point T(A), the driver 21 may send a parameter adjustment command CMD(S) according to the preset configuration information to instruct the memory controller 122 to modify the parameter P(2) from the value B(0) to the value B(1) ) and modify the parameter P(3) from the value C(0) to the value C(1). Then, at the time point T(B) after the time point T(A), the driver 21 can send the parameter adjustment command CMD(S)' according to the instruction of the control program 31 to instruct the memory controller 122 to adjust the parameter P(1) Change from value A(0) to value A(2), change parameter P(2) from value B(1) to value B(2) and change parameter P(3) from value C(1) to value C (2). Then, at the time point T(C) after the time point T(B), the driver 21 can send the parameter adjustment command CMD(S)' again according to the instruction of the control program 31 to instruct the memory controller 122 to adjust the parameter P(2 ) is modified from value B(2) to value B(3).

在一實施例中,時間點T(A)可包括驅動器21對系統參數201進行初始設定的時間點。在一實施例中,時間點T(B)可包括控制程式31根據來自遠端伺服器的更新指令或更新套件來更新系統參數201的時間點。在一實施例中,時間點T(C)可包括控制程式31根據主機系統11當下的系統狀態來主動更新系統參數201的時間點。在一實施例中,時間點T(B)與T(C)也可以對調。In one embodiment, the time point T(A) may include the time point when the driver 21 initially sets the system parameter 201 . In one embodiment, the time point T(B) may include the time point when the control program 31 updates the system parameters 201 according to the update command or the update package from the remote server. In one embodiment, the time point T(C) may include the time point when the control program 31 actively updates the system parameters 201 according to the current system state of the host system 11 . In one embodiment, the time points T(B) and T(C) can also be reversed.

須注意的是,在圖4的一實施例中,除了在時間點T(A)是由驅動器21根據預設配置資訊對系統參數201進行初次設定之外,在其他時間點(例如時間點T(B)與T(C)),控制程式31皆可根據實務需求來動態更新系統參數201。藉此,可達到主機系統11與記憶體裝置12之間進行協同運作的最佳效能。It should be noted that, in an embodiment of FIG. 4 , except that at time point T(A), the system parameter 201 is initially set by the driver 21 according to the preset configuration information, at other time points (for example, time point T (B) and T(C)), the control program 31 can dynamically update the system parameters 201 according to practical requirements. In this way, the optimal performance of the cooperative operation between the host system 11 and the memory device 12 can be achieved.

圖5是根據本發明的一實施例所繪示的記憶體裝置的參數調整方法的流程圖。請參照圖5,在步驟S501中,由主機系統發送參數調整指令至記憶體裝置。所述參數調整指令用以指示記憶體裝置根據所述參數調整指令調整至少一系統參數。在步驟S502中,由記憶體裝置根據所述參數調整指令調整至少一系統參數。在步驟S503中,由記憶體裝置根據調整後的系統參數執行至少一預設操作。FIG. 5 is a flowchart of a method for adjusting parameters of a memory device according to an embodiment of the present invention. Referring to FIG. 5, in step S501, the host system sends a parameter adjustment command to the memory device. The parameter adjustment command is used to instruct the memory device to adjust at least one system parameter according to the parameter adjustment command. In step S502, at least one system parameter is adjusted by the memory device according to the parameter adjustment instruction. In step S503, at least one preset operation is performed by the memory device according to the adjusted system parameters.

然而,圖5中各步驟已詳細說明如上,在此便不再贅述。值得注意的是,圖5中各步驟可以實作為多個程式碼或是電路,本發明不加以限制。此外,圖5的方法可以搭配以上範例實施例使用,也可以單獨使用,本發明不加以限制。However, the steps in FIG. 5 have been described in detail as above, and will not be repeated here. It should be noted that each step in FIG. 5 can be implemented as a plurality of program codes or circuits, which is not limited by the present invention. In addition, the method of FIG. 5 can be used in conjunction with the above exemplary embodiments, and can also be used alone, which is not limited in the present invention.

綜上所述,本發明的實施例提出可在記憶體裝置出廠後,由主機系統動態調整記憶體裝置中預設的系統參數。藉此,可隨著主機系統處於不同的系統狀態,對記憶體裝置執行預設操作的行為進行優化,進而提高主機系統與記憶體裝置進行協同運作時的系統效能。To sum up, the embodiments of the present invention propose that the system parameters preset in the memory device can be dynamically adjusted by the host system after the memory device leaves the factory. In this way, the behavior of the memory device performing the preset operation can be optimized as the host system is in different system states, thereby improving the system performance when the host system and the memory device cooperate with each other.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above by the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the appended patent application.

10:記憶體儲存系統 11:主機系統 111, 121:連接介面 112:處理器 113:輸入/輸出介面 12:記憶體裝置 122:記憶體控制器 123:記憶體模組 101:儲存區 102:系統區 21:驅動器 201:系統參數 31:控制程式 S501~S503:步驟 10: Memory Storage System 11: Host system 111, 121: Connection interface 112: Processor 113: Input/output interface 12: Memory device 122: Memory Controller 123: Memory module 101: Storage area 102: System area 21: Drive 201: System parameters 31: Control program S501~S503: Steps

圖1是根據本發明的一實施例所繪示的記憶體儲存系統的示意圖。 圖2是根據本發明的一實施例所繪示的發送參數調整指令來調整記憶體裝置的系統參數的示意圖。 圖3是根據本發明的一實施例所繪示的發送參數調整指令來調整記憶體裝置的系統參數的示意圖。 圖4是根據本發明的一實施例所繪示的系統參數的調整歷程的示意圖。 圖5是根據本發明的一實施例所繪示的記憶體裝置的參數調整方法的流程圖。 FIG. 1 is a schematic diagram of a memory storage system according to an embodiment of the present invention. FIG. 2 is a schematic diagram of adjusting system parameters of a memory device by sending a parameter adjustment command according to an embodiment of the present invention. FIG. 3 is a schematic diagram of adjusting system parameters of a memory device by sending a parameter adjustment command according to an embodiment of the present invention. FIG. 4 is a schematic diagram of an adjustment history of system parameters according to an embodiment of the present invention. FIG. 5 is a flowchart of a method for adjusting parameters of a memory device according to an embodiment of the present invention.

S501~S503:步驟 S501~S503: Steps

Claims (9)

一種記憶體裝置的參數調整方法,用於一主機系統,其中該主機系統耦接至該記憶體裝置,且該參數調整方法包括:發送一參數查詢指令至該記憶體裝置,以指示該記憶體裝置回傳與至少一系統參數有關的一狀態資訊;根據該狀態資訊發送一參數調整指令至該記憶體裝置,以指示該記憶體裝置根據該參數調整指令調整該至少一系統參數,其中該至少一系統參數影響該記憶體裝置執行至少一預設操作的行為,且該記憶體裝置不在未接收到該參數調整指令的情況下自行調整該至少一系統參數。 A parameter adjustment method of a memory device is used in a host system, wherein the host system is coupled to the memory device, and the parameter adjustment method comprises: sending a parameter query command to the memory device to instruct the memory device The device returns a state information related to at least one system parameter; sends a parameter adjustment command to the memory device according to the state information to instruct the memory device to adjust the at least one system parameter according to the parameter adjustment command, wherein the at least one system parameter is adjusted according to the parameter adjustment command. A system parameter affects the behavior of the memory device to perform at least one preset operation, and the memory device does not adjust the at least one system parameter by itself without receiving the parameter adjustment command. 如請求項1所述的記憶體裝置的參數調整方法,其中該至少一預設操作包括一電源狀態管理操作、一背景資料整理操作及一溫度控制操作的至少其中之一。 The method for adjusting parameters of a memory device as claimed in claim 1, wherein the at least one preset operation includes at least one of a power state management operation, a background data sorting operation and a temperature control operation. 如請求項1所述的記憶體裝置的參數調整方法,其中該狀態資訊反映該至少一系統參數中的一第一參數的一當前參數值、該第一參數的一預設參數值、該第一參數的一替代參數值及該第一參數是否可被調整的至少其中之一。 The parameter adjustment method of a memory device as claimed in claim 1, wherein the status information reflects a current parameter value of a first parameter of the at least one system parameter, a default parameter value of the first parameter, the first parameter At least one of an alternate parameter value of a parameter and whether the first parameter can be adjusted. 如請求項1所述的記憶體裝置的參數調整方法,其中發送該參數調整指令至該記憶體裝置包括:偵測該主機系統的一系統狀態;以及根據該系統狀態發送該參數調整指令至該記憶體裝置,以提 升該記憶體裝置在該主機系統的該系統狀態下執行該至少一預設操作的效能。 The parameter adjustment method of a memory device as claimed in claim 1, wherein sending the parameter adjustment command to the memory device comprises: detecting a system state of the host system; and sending the parameter adjustment command to the memory device according to the system state memory device to The performance of the memory device to perform the at least one preset operation in the system state of the host system is increased. 如請求項1所述的記憶體裝置的參數調整方法,其中發送該參數調整指令至該記憶體裝置的步驟包括:由該主機系統的一驅動器根據一預設配置資訊發送一第一參數調整指令至該記憶體裝置,以指示該記憶體裝置將該至少一系統參數中的一第一參數設定為一第一數值,其中該驅動器用以驅動該記憶體裝置。 The parameter adjustment method of a memory device as claimed in claim 1, wherein the step of sending the parameter adjustment command to the memory device comprises: sending a first parameter adjustment command from a driver of the host system according to a preset configuration information to the memory device to instruct the memory device to set a first parameter of the at least one system parameter to a first value, wherein the driver is used to drive the memory device. 如請求項1所述的記憶體裝置的參數調整方法,其中發送該參數調整指令至該記憶體裝置的步驟包括:由該主機系統的一驅動器根據該主機系統的一控制程式的指示發送一第二參數調整指令至該記憶體裝置,以指示該記憶體裝置將該至少一系統參數中的一第一參數設定為一第二數值,其中該控制程式由該主機系統的一作業系統運行,且該驅動器用以驅動該記憶體裝置。 The parameter adjustment method of a memory device as claimed in claim 1, wherein the step of sending the parameter adjustment command to the memory device comprises: sending a first command by a driver of the host system according to an instruction of a control program of the host system Two parameter adjustment commands are sent to the memory device to instruct the memory device to set a first parameter of the at least one system parameter to a second value, wherein the control program is run by an operating system of the host system, and The driver is used for driving the memory device. 如請求項6所述的記憶體裝置的參數調整方法,其中由該主機系統的該驅動器根據該主機系統的該控制程式的指示發送該第二參數調整指令至該記憶體裝置,以指示該記憶體裝置將該至少一系統參數中的該第一參數設定為該第二數值的步驟包括:在一第一時間點,由該驅動器根據一預設配置資訊發送一第一參數調整指令至該記憶體裝置,以指示該記憶體裝置將該第一 參數設定為一第一數值;以及在晚於該第一時間點的一第二時間點,由該驅動器根據該控制程式的指示發送該第二參數調整指令至該記憶體裝置,以指示該記憶體裝置將該第一參數設定為該第二數值。 The parameter adjustment method of a memory device as claimed in claim 6, wherein the driver of the host system sends the second parameter adjustment command to the memory device according to an instruction of the control program of the host system to instruct the memory device The step of setting the first parameter of the at least one system parameter to the second value by the physical device includes: at a first time point, the driver sends a first parameter adjustment command to the memory according to a preset configuration information memory device to instruct the memory device to set the first The parameter is set to a first value; and at a second time point later than the first time point, the driver sends the second parameter adjustment command to the memory device according to the instruction of the control program to instruct the memory device The body device sets the first parameter to the second value. 如請求項7所述的記憶體裝置的參數調整方法,其中該第一時間點包括該驅動器針對該記憶體裝置執行一初始化的時間點。 The method for adjusting parameters of a memory device as claimed in claim 7, wherein the first time point includes a time point when the driver performs an initialization for the memory device. 一種記憶體儲存系統,包括:一主機系統;以及一記憶體裝置,耦接至該主機系統,其中該主機系統用以發送一參數查詢指令至該記憶體裝置,以指示該記憶體裝置回傳與至少一系統參數有關的一狀態資訊,該主機系統更用以根據該狀態資訊發送一參數調整指令至該記憶體裝置,並且該記憶體裝置用以根據該參數調整指令調整至少一系統參數並根據該至少一系統參數執行至少一預設操作,其中該至少一系統參數影響該記憶體裝置執行該至少一預設操作的行為,且該記憶體裝置不在未接收到該參數調整指令的情況下自行調整該至少一系統參數。 A memory storage system includes: a host system; and a memory device coupled to the host system, wherein the host system is used for sending a parameter query command to the memory device to instruct the memory device to return a state information related to at least one system parameter, the host system is further used for sending a parameter adjustment command to the memory device according to the state information, and the memory device is used for adjusting at least one system parameter according to the parameter adjustment command and Execute at least one preset operation according to the at least one system parameter, wherein the at least one system parameter affects the behavior of the memory device performing the at least one preset operation, and the memory device does not receive the parameter adjustment command The at least one system parameter is adjusted by itself.
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CN101281506A (en) * 2007-04-03 2008-10-08 Arm有限公司 Memory domain based security control within data processing system
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