TWI788998B - 極紫外線光源中之目標擴張率控制 - Google Patents

極紫外線光源中之目標擴張率控制 Download PDF

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Publication number
TWI788998B
TWI788998B TW110133390A TW110133390A TWI788998B TW I788998 B TWI788998 B TW I788998B TW 110133390 A TW110133390 A TW 110133390A TW 110133390 A TW110133390 A TW 110133390A TW I788998 B TWI788998 B TW I788998B
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Taiwan
Prior art keywords
target
radiation beam
target material
modified
radiation
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TW110133390A
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English (en)
Chinese (zh)
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TW202210958A (zh
Inventor
羅伯特 傑 拉法斯
丹尼爾 傑森 萊格斯
Original Assignee
荷蘭商Ａｓｍｌ荷蘭公司
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Priority claimed from US14/824,141 external-priority patent/US9820368B2/en
Priority claimed from US14/824,147 external-priority patent/US9713240B2/en
Application filed by 荷蘭商Ａｓｍｌ荷蘭公司 filed Critical 荷蘭商Ａｓｍｌ荷蘭公司
Publication of TW202210958A publication Critical patent/TW202210958A/zh
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Publication of TWI788998B publication Critical patent/TWI788998B/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Plasma Technology (AREA)
  • Lasers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW110133390A 2015-08-12 2016-08-09 極紫外線光源中之目標擴張率控制 TWI788998B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/824,141 US9820368B2 (en) 2015-08-12 2015-08-12 Target expansion rate control in an extreme ultraviolet light source
US14/824,141 2015-08-12
US14/824,147 US9713240B2 (en) 2015-08-12 2015-08-12 Stabilizing EUV light power in an extreme ultraviolet light source
US14/824,147 2015-08-12

Publications (2)

Publication Number Publication Date
TW202210958A TW202210958A (zh) 2022-03-16
TWI788998B true TWI788998B (zh) 2023-01-01

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TW105125348A TWI739755B (zh) 2015-08-12 2016-08-09 極紫外線光源中之目標擴張率控制
TW110133390A TWI788998B (zh) 2015-08-12 2016-08-09 極紫外線光源中之目標擴張率控制

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TW105125348A TWI739755B (zh) 2015-08-12 2016-08-09 極紫外線光源中之目標擴張率控制

Country Status (5)

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JP (3) JP6744397B2 (ja)
KR (2) KR20240015174A (ja)
CN (2) CN108353489B (ja)
TW (2) TWI739755B (ja)
WO (1) WO2017027566A1 (ja)

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* Cited by examiner, † Cited by third party
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US9820368B2 (en) 2015-08-12 2017-11-14 Asml Netherlands B.V. Target expansion rate control in an extreme ultraviolet light source
TWI739755B (zh) * 2015-08-12 2021-09-21 荷蘭商Ａｓｍｌ荷蘭公司 極紫外線光源中之目標擴張率控制
JP7225224B2 (ja) * 2017-10-26 2023-02-20 エーエスエムエル ネザーランズ ビー．ブイ． プラズマをモニタするためのシステム
US10314154B1 (en) * 2017-11-29 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for extreme ultraviolet source control
TWI821437B (zh) * 2018-10-26 2023-11-11 荷蘭商Ａｓｍｌ荷蘭公司 用於監控光發射之系統、ｅｕｖ光源、及控制ｅｕｖ光源之方法
WO2020091744A1 (en) * 2018-10-30 2020-05-07 Hewlett-Packard Development Company, L.P. Feedback control of microwave energy emitters
KR20210130901A (ko) * 2020-04-22 2021-11-02 삼성디스플레이 주식회사 표시 장치의 제조 장치
CN111999989B (zh) * 2020-09-01 2023-07-14 广东省智能机器人研究院 激光等离子体极紫外光源和极紫外光产生方法

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TW201230881A (en) * 2010-10-04 2012-07-16 Cymer Inc EUV light source with subsystem(s) for maintaining LPP drive laser output during EUV non-output periods

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US7872245B2 (en) * 2008-03-17 2011-01-18 Cymer, Inc. Systems and methods for target material delivery in a laser produced plasma EUV light source
US8436328B2 (en) * 2008-12-16 2013-05-07 Gigaphoton Inc. Extreme ultraviolet light source apparatus
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JP2013004258A (ja) * 2011-06-15 2013-01-07 Gigaphoton Inc 極端紫外光生成装置及び極端紫外光の生成方法
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JP6646576B2 (ja) * 2013-11-15 2020-02-14 エーエスエムエル ネザーランズ ビー．ブイ． 放射源
US9232623B2 (en) * 2014-01-22 2016-01-05 Asml Netherlands B.V. Extreme ultraviolet light source
TWI739755B (zh) * 2015-08-12 2021-09-21 荷蘭商Ａｓｍｌ荷蘭公司 極紫外線光源中之目標擴張率控制

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US20100117009A1 (en) * 2008-11-06 2010-05-13 Gigaphoton Inc. Extreme ultraviolet light source device and control method for extreme ultraviolet light source device
TW201230881A (en) * 2010-10-04 2012-07-16 Cymer Inc EUV light source with subsystem(s) for maintaining LPP drive laser output during EUV non-output periods

Also Published As

Publication number Publication date
TW202210958A (zh) 2022-03-16
KR102631831B1 (ko) 2024-01-30
JP6744397B2 (ja) 2020-08-19
KR20180038543A (ko) 2018-04-16
JP2020194178A (ja) 2020-12-03
JP2022008595A (ja) 2022-01-13
JP2018532138A (ja) 2018-11-01
TWI739755B (zh) 2021-09-21
CN108353489B (zh) 2021-11-19
WO2017027566A1 (en) 2017-02-16
JP7241143B2 (ja) 2023-03-16
JP6952844B2 (ja) 2021-10-27
CN108353489A (zh) 2018-07-31
TW201729480A (zh) 2017-08-16
KR20240015174A (ko) 2024-02-02
CN113966061A (zh) 2022-01-21

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