KR20240015174A - 극자외 광원 내에서의 타겟 팽창 속도 제어 방법 - Google Patents
극자외 광원 내에서의 타겟 팽창 속도 제어 방법 Download PDFInfo
- Publication number
- KR20240015174A KR20240015174A KR1020247003169A KR20247003169A KR20240015174A KR 20240015174 A KR20240015174 A KR 20240015174A KR 1020247003169 A KR1020247003169 A KR 1020247003169A KR 20247003169 A KR20247003169 A KR 20247003169A KR 20240015174 A KR20240015174 A KR 20240015174A
- Authority
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- South Korea
- Prior art keywords
- radiation beam
- target material
- target
- radiation
- energy
- Prior art date
Links
- 230000005855 radiation Effects 0.000 claims abstract description 535
- 239000013077 target material Substances 0.000 claims abstract description 391
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000009826 distribution Methods 0.000 claims abstract description 24
- 230000003287 optical effect Effects 0.000 claims description 154
- 238000005259 measurement Methods 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 230000001131 transforming effect Effects 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 230000001276 controlling effect Effects 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- 230000003993 interaction Effects 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 230000006870 function Effects 0.000 description 5
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- 239000002245 particle Substances 0.000 description 4
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- 238000003860 storage Methods 0.000 description 4
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- -1 SnBr 4 Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
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- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
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- 235000012771 pancakes Nutrition 0.000 description 1
- 238000002047 photoemission electron microscopy Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001483 poly(ethyl methacrylate) polymer Polymers 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Plasma Technology (AREA)
- Lasers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/824,141 US9820368B2 (en) | 2015-08-12 | 2015-08-12 | Target expansion rate control in an extreme ultraviolet light source |
| US14/824,141 | 2015-08-12 | ||
| US14/824,147 US9713240B2 (en) | 2015-08-12 | 2015-08-12 | Stabilizing EUV light power in an extreme ultraviolet light source |
| US14/824,147 | 2015-08-12 | ||
| KR1020187006976A KR102631831B1 (ko) | 2015-08-12 | 2016-08-10 | 극자외 광원 내에서의 타겟 팽창 속도 제어 방법 |
| PCT/US2016/046301 WO2017027566A1 (en) | 2015-08-12 | 2016-08-10 | Target expansion rate control in an extreme ultraviolet light source |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187006976A Division KR102631831B1 (ko) | 2015-08-12 | 2016-08-10 | 극자외 광원 내에서의 타겟 팽창 속도 제어 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240015174A true KR20240015174A (ko) | 2024-02-02 |
Family
ID=57983682
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247003169A KR20240015174A (ko) | 2015-08-12 | 2016-08-10 | 극자외 광원 내에서의 타겟 팽창 속도 제어 방법 |
| KR1020187006976A KR102631831B1 (ko) | 2015-08-12 | 2016-08-10 | 극자외 광원 내에서의 타겟 팽창 속도 제어 방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187006976A KR102631831B1 (ko) | 2015-08-12 | 2016-08-10 | 극자외 광원 내에서의 타겟 팽창 속도 제어 방법 |
Country Status (5)
| Country | Link |
|---|---|
| JP (3) | JP6744397B2 (ja) |
| KR (2) | KR20240015174A (ja) |
| CN (2) | CN108353489B (ja) |
| TW (2) | TWI739755B (ja) |
| WO (1) | WO2017027566A1 (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9820368B2 (en) | 2015-08-12 | 2017-11-14 | Asml Netherlands B.V. | Target expansion rate control in an extreme ultraviolet light source |
| TWI739755B (zh) * | 2015-08-12 | 2021-09-21 | 荷蘭商Ａｓｍｌ荷蘭公司 | 極紫外線光源中之目標擴張率控制 |
| JP7225224B2 (ja) * | 2017-10-26 | 2023-02-20 | エーエスエムエル ネザーランズ ビー．ブイ． | プラズマをモニタするためのシステム |
| US10314154B1 (en) * | 2017-11-29 | 2019-06-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for extreme ultraviolet source control |
| TWI821437B (zh) * | 2018-10-26 | 2023-11-11 | 荷蘭商Ａｓｍｌ荷蘭公司 | 用於監控光發射之系統、ｅｕｖ光源、及控制ｅｕｖ光源之方法 |
| WO2020091744A1 (en) * | 2018-10-30 | 2020-05-07 | Hewlett-Packard Development Company, L.P. | Feedback control of microwave energy emitters |
| KR20210130901A (ko) * | 2020-04-22 | 2021-11-02 | 삼성디스플레이 주식회사 | 표시 장치의 제조 장치 |
| CN111999989B (zh) * | 2020-09-01 | 2023-07-14 | 广东省智能机器人研究院 | 激光等离子体极紫外光源和极紫外光产生方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5982800A (en) * | 1997-04-23 | 1999-11-09 | Cymer, Inc. | Narrow band excimer laser |
| US8653437B2 (en) * | 2010-10-04 | 2014-02-18 | Cymer, Llc | EUV light source with subsystem(s) for maintaining LPP drive laser output during EUV non-output periods |
| US8654438B2 (en) * | 2010-06-24 | 2014-02-18 | Cymer, Llc | Master oscillator-power amplifier drive laser with pre-pulse for EUV light source |
| JP4917014B2 (ja) * | 2004-03-10 | 2012-04-18 | サイマー インコーポレイテッド | Ｅｕｖ光源 |
| US7529281B2 (en) * | 2006-07-11 | 2009-05-05 | Mobius Photonics, Inc. | Light source with precisely controlled wavelength-converted average power |
| US7872245B2 (en) * | 2008-03-17 | 2011-01-18 | Cymer, Inc. | Systems and methods for target material delivery in a laser produced plasma EUV light source |
| JP5368261B2 (ja) * | 2008-11-06 | 2013-12-18 | ギガフォトン株式会社 | 極端紫外光源装置、極端紫外光源装置の制御方法 |
| US8436328B2 (en) * | 2008-12-16 | 2013-05-07 | Gigaphoton Inc. | Extreme ultraviolet light source apparatus |
| NL2004837A (en) * | 2009-07-09 | 2011-01-10 | Asml Netherlands Bv | Radiation system and lithographic apparatus. |
| JP2013004258A (ja) * | 2011-06-15 | 2013-01-07 | Gigaphoton Inc | 極端紫外光生成装置及び極端紫外光の生成方法 |
| JP5075951B2 (ja) * | 2010-07-16 | 2012-11-21 | ギガフォトン株式会社 | 極端紫外光源装置及びドライバレーザシステム |
| US8810902B2 (en) * | 2010-12-29 | 2014-08-19 | Asml Netherlands B.V. | Multi-pass optical apparatus |
| KR20140060560A (ko) * | 2011-09-02 | 2014-05-20 | 에이에스엠엘 네델란즈 비.브이. | 방사선 소스 및 리소그래피 장치 |
| JP5881345B2 (ja) * | 2011-09-13 | 2016-03-09 | ギガフォトン株式会社 | 極端紫外光生成装置 |
| JP5932306B2 (ja) * | 2011-11-16 | 2016-06-08 | ギガフォトン株式会社 | 極端紫外光生成装置 |
| DE102011086949A1 (de) * | 2011-11-23 | 2013-05-23 | Carl Zeiss Smt Gmbh | Beleuchtungs- und Verlagerungsvorrichtung für eine Projektionsbelichtungsanlage |
| WO2014019803A1 (en) * | 2012-08-01 | 2014-02-06 | Asml Netherlands B.V. | Method and apparatus for generating radiation |
| CN103064260A (zh) * | 2012-12-10 | 2013-04-24 | 华中科技大学 | 一种用于极紫外光刻机光源的锡液滴靶产生装置 |
| US9000403B2 (en) * | 2013-02-15 | 2015-04-07 | Asml Netherlands B.V. | System and method for adjusting seed laser pulse width to control EUV output energy |
| US8872143B2 (en) * | 2013-03-14 | 2014-10-28 | Asml Netherlands B.V. | Target for laser produced plasma extreme ultraviolet light source |
| US8680495B1 (en) * | 2013-03-15 | 2014-03-25 | Cymer, Llc | Extreme ultraviolet light source |
| KR102214861B1 (ko) * | 2013-03-15 | 2021-02-10 | 에이에스엠엘 네델란즈 비.브이. | 극자외 광원을 위한 빔 위치 제어 |
| JP6646576B2 (ja) * | 2013-11-15 | 2020-02-14 | エーエスエムエル ネザーランズ ビー．ブイ． | 放射源 |
| US9232623B2 (en) * | 2014-01-22 | 2016-01-05 | Asml Netherlands B.V. | Extreme ultraviolet light source |
| TWI739755B (zh) * | 2015-08-12 | 2021-09-21 | 荷蘭商Ａｓｍｌ荷蘭公司 | 極紫外線光源中之目標擴張率控制 |
-
2016
- 2016-08-09 TW TW105125348A patent/TWI739755B/zh active
- 2016-08-09 TW TW110133390A patent/TWI788998B/zh active
- 2016-08-10 CN CN201680047368.0A patent/CN108353489B/zh active Active
- 2016-08-10 WO PCT/US2016/046301 patent/WO2017027566A1/en active Application Filing
- 2016-08-10 JP JP2018506293A patent/JP6744397B2/ja active Active
- 2016-08-10 KR KR1020247003169A patent/KR20240015174A/ko active Application Filing
- 2016-08-10 KR KR1020187006976A patent/KR102631831B1/ko active IP Right Grant
- 2016-08-10 CN CN202111336436.4A patent/CN113966061A/zh active Pending
-
2020
- 2020-07-30 JP JP2020129631A patent/JP6952844B2/ja active Active
-
2021
- 2021-09-28 JP JP2021157970A patent/JP7241143B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW202210958A (zh) | 2022-03-16 |
| TWI788998B (zh) | 2023-01-01 |
| KR102631831B1 (ko) | 2024-01-30 |
| JP6744397B2 (ja) | 2020-08-19 |
| KR20180038543A (ko) | 2018-04-16 |
| JP2020194178A (ja) | 2020-12-03 |
| JP2022008595A (ja) | 2022-01-13 |
| JP2018532138A (ja) | 2018-11-01 |
| TWI739755B (zh) | 2021-09-21 |
| CN108353489B (zh) | 2021-11-19 |
| WO2017027566A1 (en) | 2017-02-16 |
| JP7241143B2 (ja) | 2023-03-16 |
| JP6952844B2 (ja) | 2021-10-27 |
| CN108353489A (zh) | 2018-07-31 |
| TW201729480A (zh) | 2017-08-16 |
| CN113966061A (zh) | 2022-01-21 |
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| Date | Code | Title | Description |
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| A107 | Divisional application of patent |