TWI780800B - Wafer cleaning brush - Google Patents

Wafer cleaning brush Download PDF

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TWI780800B
TWI780800B TW110124078A TW110124078A TWI780800B TW I780800 B TWI780800 B TW I780800B TW 110124078 A TW110124078 A TW 110124078A TW 110124078 A TW110124078 A TW 110124078A TW I780800 B TWI780800 B TW I780800B
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Taiwan
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wafer
cleaning brush
height
wafer cleaning
protrusion
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TW110124078A
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Chinese (zh)
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TW202302228A (en
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陳銘祥
顏勢錡
施凱僥
蔡秉宸
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力晶積成電子製造股份有限公司
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Publication of TW202302228A publication Critical patent/TW202302228A/en

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Abstract

A wafer cleaning brush including a main body portion and a protruding portion. The protruding portion is connected to the main body portion. The protruding portion includes a wafer contact region and two side regions connected to two sides of the wafer contact region. The wafer contact region includes a valid die region and two invalid die regions connected to two sides of the valid die region. The height of the protruding portion located in the invalid die regions is lower than the height of the protruding portion located in the valid die region.

Description

晶圓清洗刷Wafer cleaning brush

本發明實施例是有關於一種清洗刷,且特別是有關於一種晶圓清洗刷。The embodiment of the present invention relates to a cleaning brush, and in particular to a wafer cleaning brush.

在半導體製程結束後,常會對晶圓進行清洗,以維持晶圓的清潔。舉例來說,在對晶圓進行化學機械研磨(chemical mechanical polishing,CMP)製程之後,會使用晶圓清洗刷對晶圓進行清洗製程。然而,在上述清洗製程中,由於晶圓清洗刷會受到晶圓邊緣的擠壓而產生切痕(cutting mark)。如此一來,當微粒累積在切痕中時,將會形成汙染源,而導致晶圓受到汙染。After the semiconductor manufacturing process is completed, the wafer is often cleaned to maintain the cleanliness of the wafer. For example, after a chemical mechanical polishing (CMP) process is performed on the wafer, a wafer cleaning brush is used to perform a cleaning process on the wafer. However, in the above-mentioned cleaning process, the wafer cleaning brushes are pressed by the edge of the wafer to generate cutting marks. As a result, when particles accumulate in the kerf, they will form a source of contamination, resulting in contamination of the wafer.

本發明提供一種晶圓清洗刷,其可防止在晶圓清洗刷上產生切痕。The invention provides a wafer cleaning brush, which can prevent cutting marks from being generated on the wafer cleaning brush.

本發明提出一種晶圓清洗刷,包括主體部與突出部。突出部連接於主體部。突出部包括晶圓接觸區與連接於晶圓接觸區的兩側的兩個側邊區。晶圓接觸區包括有效晶粒區與連接於有效晶粒區的兩側的兩個無效晶粒區。位在無效晶粒區中的突出部的高度低於位在有效晶粒區中的突出部的高度。The invention provides a wafer cleaning brush, which includes a main body and a protrusion. The protruding part is connected to the main part. The protrusion includes a wafer contact area and two side areas connected to two sides of the wafer contact area. The wafer contact area includes an effective grain area and two invalid grain areas connected to two sides of the effective grain area. The height of the protrusion located in the invalid die region is lower than the height of the protrusion located in the effective die region.

依照本發明的一實施例所述,在上述晶圓清洗刷中,晶圓清洗刷的形狀例如是滾輪狀。According to an embodiment of the present invention, in the above-mentioned wafer cleaning brush, the shape of the wafer cleaning brush is, for example, a roller shape.

依照本發明的一實施例所述,在上述晶圓清洗刷中,位在無效晶粒區中的突出部的高度可比位在有效晶粒區中的突出部的高度低10%至30%。According to an embodiment of the present invention, in the above-mentioned wafer cleaning brush, the height of the protrusion located in the invalid die area may be 10% to 30% lower than the height of the protrusion located in the effective die area.

依照本發明的一實施例所述,在上述晶圓清洗刷中,位在側邊區中的突出部的高度可低於位在有效晶粒區中的突出部的高度。According to an embodiment of the present invention, in the above-mentioned wafer cleaning brush, the height of the protrusions located in the side area may be lower than the height of the protrusions located in the effective die area.

依照本發明的一實施例所述,在上述晶圓清洗刷中,位在側邊區中的突出部的高度可比位在有效晶粒區中的突出部的高度低10%至30%。According to an embodiment of the present invention, in the above-mentioned wafer cleaning brush, the height of the protrusion located in the side area may be 10% to 30% lower than the height of the protrusion located in the effective die area.

依照本發明的一實施例所述,在上述晶圓清洗刷中,位在側邊區中的突出部的高度可等於位在無效晶粒區中的突出部的高度。According to an embodiment of the present invention, in the above-mentioned wafer cleaning brush, the height of the protrusion located in the side area may be equal to the height of the protrusion located in the invalid die area.

依照本發明的一實施例所述,在上述晶圓清洗刷中,主體部與突出部可為一體成型。According to an embodiment of the present invention, in the above-mentioned wafer cleaning brush, the main body part and the protruding part may be integrally formed.

依照本發明的一實施例所述,在上述晶圓清洗刷中,突出部可包括至少一個突出物。According to an embodiment of the present invention, in the above-mentioned wafer cleaning brush, the protrusion may include at least one protrusion.

依照本發明的一實施例所述,在上述晶圓清洗刷中,無效晶粒區的寬度可為晶圓接觸區的寬度的1%至3%。According to an embodiment of the present invention, in the above-mentioned wafer cleaning brush, the width of the invalid grain area may be 1% to 3% of the width of the wafer contact area.

依照本發明的一實施例所述,在上述晶圓清洗刷中,主體部的材料與突出部的材料例如是泡棉或聚醋酸乙烯酯(polyvinyl acetate,PVA)。According to an embodiment of the present invention, in the above-mentioned wafer cleaning brush, the material of the main body and the protrusion are, for example, foam or polyvinyl acetate (PVA).

基於上述,在本發明所提出的晶圓清洗刷中,位在晶圓接觸區的無效晶粒區中的突出部的高度低於位在晶圓接觸區的有效晶粒區中的突出部的高度。藉此,在利用晶圓清洗刷對晶圓進行清洗時,可降低晶圓邊緣施加在無效晶粒區中的突出部上的壓力,進而防止在晶圓清洗刷上產生切痕。如此一來,可防止微粒累積在切痕中的問題。因此,在利用晶圓清洗刷對晶圓進行清洗時,可避免晶圓受到汙染。Based on the above, in the wafer cleaning brush proposed by the present invention, the height of the protrusion in the invalid grain area of the wafer contact area is lower than the height of the protrusion in the effective grain area of the wafer contact area. high. Thereby, when the wafer is cleaned by the wafer cleaning brush, the pressure exerted by the edge of the wafer on the protruding portion in the invalid die area can be reduced, thereby preventing the generation of cut marks on the wafer cleaning brush. In this way, the problem of particles accumulating in the cut marks can be prevented. Therefore, when using the wafer cleaning brush to clean the wafer, the wafer can be prevented from being polluted.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

圖1為根據本發明一實施例的晶圓清洗刷的立體圖。圖2為沿著圖1中的I-I’剖面線的剖面圖。圖3為根據本發明一實施例的在使用晶圓清洗刷清洗晶圓時的剖面圖。FIG. 1 is a perspective view of a wafer cleaning brush according to an embodiment of the present invention. Fig. 2 is a sectional view along the line I-I' in Fig. 1 . FIG. 3 is a cross-sectional view of a wafer using a wafer cleaning brush according to an embodiment of the present invention.

請參照圖1與圖2,晶圓清洗刷100包括主體部102與突出部104。在一些實施例中,請參照圖3,晶圓清洗刷100可為在化學機械研磨後清洗(post-CMP cleaning)中用於清洗晶圓W的晶圓清洗刷。在圖3中,雖然僅繪示出位在晶圓W的一側的晶圓清洗刷100,然而實際上可在晶圓W的兩側分別設置晶圓清洗刷100,以分別對晶圓W的正面與背面進行清洗。在一些實施例中,在使用晶圓清洗刷100清洗晶圓W時,晶圓清洗刷100可套設在芯體(core)(未示出)上,其中芯體可帶動晶圓清洗刷100進行轉動。此外,晶圓清洗刷100的形狀例如是滾輪狀。主體部102的材料例如是泡棉或聚醋酸乙烯酯(PVA)。Referring to FIGS. 1 and 2 , the wafer cleaning brush 100 includes a main body 102 and a protrusion 104 . In some embodiments, please refer to FIG. 3 , the wafer cleaning brush 100 may be a wafer cleaning brush for cleaning the wafer W in post-CMP cleaning. In FIG. 3, although only the wafer cleaning brushes 100 on one side of the wafer W are shown, in fact, the wafer cleaning brushes 100 can be respectively arranged on both sides of the wafer W to clean the wafer W respectively. Clean the front and back. In some embodiments, when using the wafer cleaning brush 100 to clean the wafer W, the wafer cleaning brush 100 can be sleeved on a core (core) (not shown), wherein the core can drive the wafer cleaning brush 100 Make a turn. In addition, the shape of the wafer cleaning brush 100 is, for example, a roller shape. The material of the main body 102 is, for example, foam or polyvinyl acetate (PVA).

請參照圖1與圖2,突出部104連接於主體部102。在一些實施例中,主體部102與突出部104可為一體成型,但本發明並不以此為限。在另一些實施例中,主體部102與突出部104可不為一體成型。突出部104的材料例如是泡棉或聚醋酸乙烯酯(PVA)。突出部104可包括至少一個突出物106。突出物106的形狀可為顆粒狀、條狀、波浪狀、螺旋狀或其組合。在本實施例中,突出部104是以包括多個突出物106為例,且突出物106的形狀是以顆粒狀為例,但本發明並不以此為限。Referring to FIG. 1 and FIG. 2 , the protruding portion 104 is connected to the main body portion 102 . In some embodiments, the main body portion 102 and the protruding portion 104 can be integrally formed, but the invention is not limited thereto. In some other embodiments, the main body portion 102 and the protruding portion 104 may not be integrally formed. The material of the protrusion 104 is, for example, foam or polyvinyl acetate (PVA). The protrusion 104 may include at least one protrusion 106 . The shape of the protrusions 106 can be granular, strip, wave, spiral or a combination thereof. In this embodiment, the protruding portion 104 is exemplified to include a plurality of protruding objects 106 , and the shape of the protruding objects 106 is exemplified in a granular shape, but the present invention is not limited thereto.

請參照圖1與圖2,突出部104包括晶圓接觸區R1與連接於晶圓接觸區R1的兩側的兩個側邊區R2。在本實施例中,如圖3所示,晶圓接觸區R1是指在對晶圓W進行清洗時突出部104與晶圓W接觸的區域。在本實施例中,側邊區R2是指晶圓接觸區R1以外的突出部104的區域。晶圓接觸區R1包括有效晶粒區R3與連接於有效晶粒區R3的兩側的兩個無效晶粒區R4。在本實施例中,有效晶粒區R3可對應於晶圓W上的有效晶粒的區域,且無效晶粒區R4可對應於晶圓W上的無效晶粒的區域。在一些實施例中,晶圓W上的無效晶粒的區域通常是位在晶圓W的邊緣。在一些實施例中,無效晶粒區R4的寬度W2為晶圓接觸區R1的寬度W1的1%至3%。在一些實施例中,如圖3所示,晶圓接觸區R1的寬度W1可等於晶圓W的直徑R。Referring to FIGS. 1 and 2 , the protruding portion 104 includes a wafer contact region R1 and two side regions R2 connected to two sides of the wafer contact region R1 . In this embodiment, as shown in FIG. 3 , the wafer contact region R1 refers to the region where the protruding portion 104 contacts the wafer W when the wafer W is cleaned. In this embodiment, the side region R2 refers to the region of the protruding portion 104 outside the wafer contact region R1 . The wafer contact region R1 includes an effective die region R3 and two ineffective die regions R4 connected to two sides of the effective die region R3 . In this embodiment, the effective die region R3 may correspond to the region of the effective die on the wafer W, and the invalid die region R4 may correspond to the region of the invalid die on the wafer W. In some embodiments, the area of the dead die on the wafer W is usually located at the edge of the wafer W. In some embodiments, the width W2 of the ineffective die region R4 is 1% to 3% of the width W1 of the wafer contact region R1 . In some embodiments, the width W1 of the wafer contact region R1 may be equal to the diameter R of the wafer W, as shown in FIG. 3 .

如圖2所示,位在無效晶粒區R4中的突出部104的高度H2低於位在有效晶粒區R3中的突出部104的高度H1。位在無效晶粒區R4中的突出部104的高度H2可比位在有效晶粒區R3中的突出部104的高度H1低10%至30%。As shown in FIG. 2 , the height H2 of the protrusion 104 located in the invalid die region R4 is lower than the height H1 of the protrusion 104 located in the active die region R3 . The height H2 of the protruding portion 104 in the invalid die region R4 may be 10% to 30% lower than the height H1 of the protruding portion 104 in the effective die region R3.

此外,如圖2所示,位在側邊區R2中的突出部104的高度H3可低於位在有效晶粒區R3中的突出部104的高度H1。位在側邊區R2中的突出部104的高度H3可比位在有效晶粒區R3中的突出部104的高度H1低10%至30%。在一些實施例中,位在側邊區R2中的突出部104的高度H3可等於位在無效晶粒區R4中的突出部104的高度H2。In addition, as shown in FIG. 2 , the height H3 of the protrusion 104 located in the side region R2 may be lower than the height H1 of the protrusion 104 located in the effective die region R3 . The height H3 of the protruding portion 104 in the side region R2 may be 10% to 30% lower than the height H1 of the protruding portion 104 in the effective die region R3. In some embodiments, the height H3 of the protruding portion 104 located in the side region R2 may be equal to the height H2 of the protruding portion 104 located in the invalid die region R4.

在一些實施例中,如圖3所示,在利用晶圓清洗刷100對晶圓W進行清洗時,突出部104的與晶圓W接觸的部分會受到晶圓W的擠壓而導致高度暫時降低。在一些實施例中,可同時使用晶圓清洗刷100與清洗溶液對晶圓W進行清洗。In some embodiments, as shown in FIG. 3 , when the wafer W is cleaned with the wafer cleaning brush 100 , the portion of the protruding portion 104 that is in contact with the wafer W will be pressed by the wafer W, resulting in a highly temporary reduce. In some embodiments, the wafer W can be cleaned by using the wafer cleaning brush 100 and the cleaning solution at the same time.

基於上述實施例可知,在晶圓清洗刷100中,位在晶圓接觸區R1的無效晶粒區R4中的突出部104的高度H2低於位在晶圓接觸區R1的有效晶粒區R3中的突出部104的高度H1。藉此,如圖3所示,在利用晶圓清洗刷100對晶圓W進行清洗時,可降低晶圓W的邊緣施加在無效晶粒區R4中的突出部104上的壓力,進而防止在晶圓清洗刷100上產生切痕。如此一來,可防止微粒累積在切痕中的問題。因此,在利用晶圓清洗刷100對晶圓W進行清洗時,可避免晶圓W受到汙染。Based on the above embodiment, it can be seen that in the wafer cleaning brush 100, the height H2 of the protrusion 104 located in the invalid grain region R4 of the wafer contact region R1 is lower than the height H2 of the effective grain region R3 located in the wafer contact region R1 The height H1 of the protruding part 104 in. Thereby, as shown in FIG. 3, when the wafer W is cleaned by the wafer cleaning brush 100, the pressure exerted by the edge of the wafer W on the protruding portion 104 in the ineffective die region R4 can be reduced, thereby preventing Cut marks are generated on the wafer cleaning brush 100 . In this way, the problem of particles accumulating in the cut marks can be prevented. Therefore, when the wafer W is cleaned by the wafer cleaning brush 100 , contamination of the wafer W can be avoided.

綜上所述,在利用上述實施例的晶圓清洗刷對晶圓進行清洗時,可防止在晶圓清洗刷上產生切痕,因此可防止微粒累積在切痕中的問題,進而避免晶圓在清洗時受到汙染。To sum up, when using the wafer cleaning brush of the above-mentioned embodiment to clean the wafer, it can prevent the generation of cut marks on the wafer cleaning brush, so it can prevent the problem of particles accumulating in the cut marks, thereby avoiding the problem of wafer cleaning. Contaminated during cleaning.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.

100:晶圓清洗刷 102:主體部 104:突出部 106:突出物 H1~H3:高度 R:直徑 R1:晶圓接觸區 R2:側邊區 R3:有效晶粒區 R4:無效晶粒區 W:晶圓 W1, W2:寬度 100: Wafer cleaning brush 102: Main body 104: protrusion 106: Prominence H1~H3: Height R: Diameter R1: wafer contact area R2: side area R3: effective grain area R4: invalid grain area W: Wafer W1, W2: width

圖1為根據本發明一實施例的晶圓清洗刷的立體圖。 圖2為沿著圖1中的I-I’剖面線的剖面圖。 圖3為根據本發明一實施例的在使用晶圓清洗刷清洗晶圓時的剖面圖。 FIG. 1 is a perspective view of a wafer cleaning brush according to an embodiment of the present invention. Fig. 2 is a sectional view along the line I-I' in Fig. 1 . FIG. 3 is a cross-sectional view of a wafer using a wafer cleaning brush according to an embodiment of the present invention.

100:晶圓清洗刷 100: Wafer cleaning brush

102:主體部 102: Main body

104:突出部 104: protrusion

106:突出物 106: Prominence

H1~H3:高度 H1~H3: Height

R1:晶圓接觸區 R1: wafer contact area

R2:側邊區 R2: side area

R3:有效晶粒區 R3: effective grain area

R4:無效晶粒區 R4: invalid grain area

W1,W2:寬度 W1, W2: width

Claims (10)

一種晶圓清洗刷,包括:主體部;以及突出部,連接於所述主體部,且包括晶圓接觸區與連接於所述晶圓接觸區的兩側的兩個側邊區,其中所述晶圓接觸區包括有效晶粒區與連接於所述有效晶粒區的兩側的兩個無效晶粒區,且位在兩個所述無效晶粒區中的所述突出部的底面至頂面的高度低於位在所述有效晶粒區中的所述突出部的底面至頂面的高度。 A wafer cleaning brush, comprising: a main body; and a protrusion, connected to the main body, and including a wafer contact area and two side areas connected to both sides of the wafer contact area, wherein the The wafer contact area includes an effective grain area and two invalid grain areas connected to both sides of the effective grain area, and the bottom surface to the top of the protrusion located in the two invalid grain areas The height of the surface is lower than the height from the bottom surface to the top surface of the protrusion located in the effective grain area. 如請求項1所述的晶圓清洗刷,其中晶圓清洗刷的形狀包括滾輪狀。 The wafer cleaning brush as claimed in claim 1, wherein the shape of the wafer cleaning brush includes a roller shape. 如請求項1所述的晶圓清洗刷,其中位在兩個所述無效晶粒區中的所述突出部的底面至頂面的高度比位在所述有效晶粒區中的所述突出部的底面至頂面的高度低10%至30%。 The wafer cleaning brush according to claim 1, wherein the height from the bottom surface to the top surface of the protrusions located in the two invalid grain areas is higher than that of the protrusions located in the effective grain area The height from the bottom surface to the top surface of the head is 10% to 30% lower. 如請求項1所述的晶圓清洗刷,其中位在兩個所述側邊區中的所述突出部的底面至頂面的高度低於位在所述有效晶粒區中的所述突出部的底面至頂面的高度。 The wafer cleaning brush according to claim 1, wherein the height from the bottom surface to the top surface of the protrusions located in the two side regions is lower than that of the protrusions located in the effective grain area The height from the bottom surface to the top surface of the section. 如請求項4所述的晶圓清洗刷,其中位在兩個所述側邊區中的所述突出部的底面至頂面的高度比位在所述有效晶粒區中的所述突出部的底面至頂面的高度低10%至30%。 The wafer cleaning brush according to claim 4, wherein the height from the bottom surface to the top surface of the protrusions located in the two side regions is higher than that of the protrusions located in the effective grain area 10% to 30% lower height from the bottom surface to the top surface. 如請求項4所述的晶圓清洗刷,其中位在兩個所述側邊區中的所述突出部的底面至頂面的高度等於位在兩個所述無效晶粒區中的所述突出部的底面至頂面的高度。 The wafer cleaning brush according to claim 4, wherein the height from the bottom surface to the top surface of the protrusions located in the two side regions is equal to the height of the protrusions located in the two invalid grain regions. The height from the bottom surface of the protrusion to the top surface. 如請求項1所述的晶圓清洗刷,其中所述主體部與所述突出部為一體成型。 The wafer cleaning brush according to claim 1, wherein the main body part and the protruding part are integrally formed. 如請求項1所述的晶圓清洗刷,其中所述突出部包括至少一個突出物。 The wafer cleaning brush according to claim 1, wherein the protrusion comprises at least one protrusion. 如請求項1所述的晶圓清洗刷,其中所述無效晶粒區的寬度為所述晶圓接觸區的寬度的1%至3%。 The wafer cleaning brush according to claim 1, wherein the width of the invalid grain area is 1% to 3% of the width of the wafer contact area. 如請求項1所述的晶圓清洗刷,其中所述主體部的材料與所述突出部的材料包括泡棉或聚醋酸乙烯酯。 The wafer cleaning brush according to claim 1, wherein the material of the main body and the protrusion include foam or polyvinyl acetate.
TW110124078A 2021-06-30 2021-06-30 Wafer cleaning brush TWI780800B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116779493A (en) * 2023-08-18 2023-09-19 浙江求是半导体设备有限公司 Wafer surface treatment mechanism and wafer surface treatment equipment

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203695489U (en) * 2014-01-17 2014-07-09 中芯国际集成电路制造(北京)有限公司 Wafer cleaning device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203695489U (en) * 2014-01-17 2014-07-09 中芯国际集成电路制造(北京)有限公司 Wafer cleaning device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116779493A (en) * 2023-08-18 2023-09-19 浙江求是半导体设备有限公司 Wafer surface treatment mechanism and wafer surface treatment equipment
CN116779493B (en) * 2023-08-18 2023-12-19 浙江求是半导体设备有限公司 Wafer surface treatment mechanism and wafer surface treatment equipment

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