TWI808446B - Wafer cleaning system and wafer cleaning method - Google Patents
Wafer cleaning system and wafer cleaning method Download PDFInfo
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Abstract
Description
本發明實施例是有關於一種清洗系統與清洗方法,且特別是有關於一種晶圓清洗系統與晶圓清洗方法。 The embodiments of the present invention relate to a cleaning system and a cleaning method, and in particular to a wafer cleaning system and a wafer cleaning method.
在半導體製程結束後,常會對晶圓進行清洗,以維持晶圓的清潔。舉例來說,在對晶圓進行化學機械研磨(chemical mechanical polishing,CMP)製程之後,會使用晶圓清洗刷與清洗溶液對晶圓進行清洗製程。然而,在使用鹼性清洗溶液進行化學機械研磨後清洗(post-CMP cleaning)時,晶圓上的金屬(如,鎢接觸窗(tungsten contact))容易被解離,而在金屬(如,鎢接觸窗)上形成凹陷,因此容易產生斷路的問題而導致良率降低。此外,上述問題更容易發生在電性連接至P型金屬氧化物半導體電晶體(PMOS transistor)的金屬(如,鎢接觸窗)上。 After the semiconductor manufacturing process is completed, the wafer is often cleaned to maintain the cleanliness of the wafer. For example, after a chemical mechanical polishing (CMP) process is performed on the wafer, a cleaning process is performed on the wafer using a wafer cleaning brush and a cleaning solution. However, when an alkaline cleaning solution is used for post-CMP cleaning, the metal (eg, tungsten contact) on the wafer is easily dissociated, and depressions are formed on the metal (eg, tungsten contact), which is prone to open circuit problems and lower yields. In addition, the above-mentioned problems are more likely to occur on metals (eg, tungsten contacts) electrically connected to PMOS transistors.
本發明提供一種晶圓清洗系統與晶圓清洗方法,其可有 效地防止晶圓上的金屬在清洗過程中被解離。 The invention provides a wafer cleaning system and a wafer cleaning method, which can have Effectively prevent the metal on the wafer from being dissociated during the cleaning process.
本發明提出一種晶圓清洗系統,用於清洗晶圓,且包括晶圓清洗刷、清洗溶液與負電壓產生器。在工作狀態,晶圓清洗刷接觸晶圓的表面。清洗溶液提供至晶圓的表面。清洗溶液具有導電性。負電壓產生器提供負電壓至清洗溶液。 The present invention provides a wafer cleaning system for cleaning wafers, and includes a wafer cleaning brush, a cleaning solution and a negative voltage generator. In the working state, the wafer cleaning brush contacts the surface of the wafer. A cleaning solution is provided to the surface of the wafer. Cleaning solutions are conductive. The negative voltage generator provides negative voltage to the cleaning solution.
依照本發明的一實施例所述,在上述晶圓清洗系統中,晶圓清洗刷的數量可為兩個,且兩個晶圓清洗刷設置在晶圓的相對兩側。 According to an embodiment of the present invention, in the above-mentioned wafer cleaning system, there may be two wafer cleaning brushes, and the two wafer cleaning brushes are arranged on opposite sides of the wafer.
依照本發明的一實施例所述,在上述晶圓清洗系統中,更可包括芯體。晶圓清洗刷套設在芯體上。芯體可為中空且可具有多個孔洞。負電壓產生器的電極可設置在芯體的內部。 According to an embodiment of the present invention, the above wafer cleaning system may further include a core body. The wafer cleaning brush is sheathed on the core body. The core can be hollow and can have a plurality of holes. Electrodes of the negative voltage generator may be provided inside the core.
依照本發明的一實施例所述,在上述晶圓清洗系統中,更可包括清洗溶液供應裝置。清洗溶液供應裝置設置在芯體的外部,且連通至芯體,以將清洗溶液注入芯體中。 According to an embodiment of the present invention, the above wafer cleaning system may further include a cleaning solution supply device. The cleaning solution supply device is arranged outside the core body and communicated with the core body to inject the cleaning solution into the core body.
依照本發明的一實施例所述,在上述晶圓清洗系統中,更可包括清洗溶液供應裝置。清洗溶液供應裝置設置在晶圓清洗刷上方。清洗溶液供應裝置將清洗溶液噴灑至晶圓的表面。負電壓產生器的電極可設置在清洗溶液供應裝置的內部。 According to an embodiment of the present invention, the above wafer cleaning system may further include a cleaning solution supply device. The cleaning solution supply device is arranged above the wafer cleaning brush. The cleaning solution supply device sprays the cleaning solution onto the surface of the wafer. Electrodes of the negative voltage generator may be provided inside the cleaning solution supply device.
依照本發明的一實施例所述,在上述晶圓清洗系統中,更可包括滾輪(roller)。在工作狀態,滾輪接觸晶圓的邊緣。 According to an embodiment of the present invention, the above wafer cleaning system may further include a roller. In working condition, the roller touches the edge of the wafer.
本發明提出一種晶圓清洗方法,包括以下步驟。提供清洗溶液至晶圓的表面,其中清洗溶液具有導電性。使用晶圓清洗 刷與清洗溶液對晶圓的表面進行清洗製程,其中在清洗製程中,使用負電壓產生器提供負電壓至清洗溶液。 The present invention proposes a wafer cleaning method, which includes the following steps. A cleaning solution is provided to the surface of the wafer, wherein the cleaning solution is conductive. Use wafer cleaning The brush and the cleaning solution perform a cleaning process on the surface of the wafer, wherein in the cleaning process, a negative voltage generator is used to provide a negative voltage to the cleaning solution.
依照本發明的一實施例所述,在上述晶圓清洗方法中,晶圓清洗刷套設在芯體上。芯體可為中空且可具有多個孔洞。負電壓產生器的電極可設置在芯體的內部。 According to an embodiment of the present invention, in the above wafer cleaning method, the wafer cleaning brush is sheathed on the core body. The core can be hollow and can have a plurality of holes. Electrodes of the negative voltage generator may be provided inside the core.
依照本發明的一實施例所述,在上述晶圓清洗方法中,提供清洗溶液至晶圓的表面的方法可包括以下步驟。藉由清洗溶液供應裝置將清洗溶液注入芯體中,且清洗溶液穿過芯體的孔洞與晶圓清洗刷而到達晶圓的表面。 According to an embodiment of the present invention, in the above wafer cleaning method, the method for providing the cleaning solution to the surface of the wafer may include the following steps. The cleaning solution is injected into the core body through the cleaning solution supply device, and the cleaning solution passes through the holes of the core body and the wafer cleaning brush to reach the surface of the wafer.
依照本發明的一實施例所述,在上述晶圓清洗方法中,提供清洗溶液至晶圓的表面的方法可包括以下步驟。藉由清洗溶液供應裝置將清洗溶液噴灑至晶圓的表面。負電壓產生器的電極可設置在清洗溶液供應裝置的內部。 According to an embodiment of the present invention, in the above wafer cleaning method, the method for providing the cleaning solution to the surface of the wafer may include the following steps. The cleaning solution is sprayed onto the surface of the wafer by the cleaning solution supply device. Electrodes of the negative voltage generator may be provided inside the cleaning solution supply device.
基於上述,在本發明所提出的晶圓清洗系統與晶圓清洗方法中,由於在清洗製程中,可使用負電壓產生器提供負電壓至清洗溶液,因此可有效地防止晶圓上的金屬在清洗過程中被解離。如此一來,可有效地防止斷路的問題,進而提升良率。 Based on the above, in the wafer cleaning system and wafer cleaning method proposed by the present invention, since a negative voltage generator can be used to provide a negative voltage to the cleaning solution during the cleaning process, the metal on the wafer can be effectively prevented from being dissociated during the cleaning process. In this way, the problem of open circuit can be effectively prevented, thereby improving the yield rate.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.
100:晶圓清洗系統 100: Wafer cleaning system
102:晶圓清洗刷 102: Wafer cleaning brush
102a:突出物 102a: Protrusion
104:清洗溶液 104: cleaning solution
106:負電壓產生器 106: Negative voltage generator
106a:電極 106a: electrode
106b:導線 106b: wire
108:芯體 108: Core
108a:孔洞 108a: hole
110,112:清洗溶液供應裝置 110, 112: cleaning solution supply device
110a:管路 110a: pipeline
112a:噴嘴 112a: Nozzle
114:滾輪 114:Roller
S100,S102:步驟 S100, S102: steps
W:晶圓 W: Wafer
圖1為根據本發明一實施例的晶圓清洗系統的示意圖。 FIG. 1 is a schematic diagram of a wafer cleaning system according to an embodiment of the present invention.
圖2為沿著圖1中的I-I’剖面線的剖面示意圖。 Fig. 2 is a schematic cross-sectional view along the line I-I' in Fig. 1 .
圖3為根據本發明一實施例的晶圓清洗方法的流程圖。 FIG. 3 is a flowchart of a wafer cleaning method according to an embodiment of the present invention.
圖1為根據本發明一實施例的晶圓清洗系統的示意圖。圖2為沿著圖1中的I-I’剖面線的剖面示意圖。 FIG. 1 is a schematic diagram of a wafer cleaning system according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view along the line I-I' in Fig. 1 .
請參照圖1與圖2,晶圓清洗系統100用於清洗晶圓W,且包括晶圓清洗刷102、清洗溶液104與負電壓產生器106。在一些實施例中,請參照圖3,晶圓清洗系統100可為用於化學機械研磨後清洗(post-CMP cleaning)製程的清洗系統。
Referring to FIG. 1 and FIG. 2 , the
在一些實施例中,晶圓清洗刷102的數量可為兩個,且兩個晶圓清洗刷102設置在晶圓W的相對兩側,藉此可分別對晶圓W的正面與背面進行清洗。在工作狀態,晶圓清洗刷102接觸晶圓W的表面。舉例來說,在工作狀態,晶圓清洗刷102會從啟始位置移動到工作位置,而使得晶圓清洗刷102接觸晶圓W的表面(如圖2所示)。在非工作狀態,晶圓清洗刷102會位於啟始位置,而使得晶圓清洗刷102不接觸晶圓W的表面(如圖2所示)。
In some embodiments, the number of
在一些實施例中,晶圓清洗刷102的形狀例如是滾輪狀。晶圓清洗刷102的材料例如是泡棉或聚醋酸乙烯酯(polyvinyl acetate,PVA)。此外,晶圓清洗刷102可包括至少一個突出物102a。突出物102a的形狀可為顆粒狀、條狀、波浪狀、螺旋狀或
其組合。在本實施例中,晶圓清洗刷102是以包括多個突出物102a為例,且突出物102a的形狀是以顆粒狀為例,但本發明並不以此為限。
In some embodiments, the
此外,晶圓清洗系統100更可包括芯體108。晶圓清洗刷102套設在芯體108上。藉此,芯體108可帶動晶圓清洗刷102進行轉動。芯體108可為中空且可具有多個孔洞108a(圖2)。此外,芯體108的數量可與晶圓清洗刷102的數量相同。
In addition, the
清洗溶液104提供至晶圓W的表面。清洗溶液104具有導電性。在一些實施例中,清洗溶液104可為鹼性清洗溶液,如氨水溶液(ammonia solution)。
A
此外,晶圓清洗系統100更可包括清洗溶液供應裝置110與清洗溶液供應裝置112中的至少一者。在一些實施例中,可藉由清洗溶液供應裝置110與清洗溶液供應裝置112中的至少一者將清洗溶液104提供至晶圓W的表面。
In addition, the
清洗溶液供應裝置110設置在芯體108的外部,且連通至芯體108,以將清洗溶液104注入芯體108中。舉例來說,清洗溶液供應裝置110可藉由管路110a(圖1)將清洗溶液104注入芯體108中。此外,清洗溶液104可穿過芯體108的孔洞108a(圖2)與晶圓清洗刷102而到達晶圓W的表面。
The cleaning
清洗溶液供應裝置112設置在晶圓清洗刷102上方。清洗溶液供應裝置112將清洗溶液104噴灑至晶圓W的表面。舉例來說,清洗溶液供應裝置112可為噴桿(spray bar),且清洗溶液供
應裝置112可藉由噴嘴112a將清洗溶液104噴灑至晶圓W的表面。在一些實施例中,清洗溶液供應裝置112可提供連續式的清洗溶液104至晶圓W的表面。在一些實施例中,清洗溶液供應裝置112的數量可為兩個,且兩個清洗溶液供應裝置112設置在晶圓W的相對兩側。
The cleaning
在一些實施例中,清洗溶液供應裝置110所提供的清洗溶液104與清洗溶液供應裝置112所提供的清洗溶液104可為相同的清洗溶液,但本發明並不以此為限。在另一些實施例中,清洗溶液供應裝置110所提供的清洗溶液104與清洗溶液供應裝置112所提供的清洗溶液104可為不同的清洗溶液。此外,清洗溶液供應裝置110所提供的清洗溶液104與清洗溶液供應裝置112所提供的清洗溶液104可在晶圓W的表面進行混合。
In some embodiments, the
雖然用於將清洗溶液104提供至晶圓W的表面的裝置是以上述裝置(如,清洗溶液供應裝置110及/或清洗溶液供應裝置112)為例來進行說明,但本發明並不以此為限。只要是可將清洗溶液104提供至晶圓W的表面的裝置均屬於本發明所涵蓋的範圍。
Although the device for supplying the
負電壓產生器106提供負電壓至清洗溶液104,藉此可有效地防止晶圓W上的金屬(如,鎢、鋁、銅或鎵,但本發明並不以此為限)在清洗過程中被解離。在一些實施例中,負電壓產生器106的電極106a可設置在芯體108的內部(如圖1所示),以提供負電壓至清洗溶液104。在本實施例中,負電壓產生器106的兩對電極106a分別可設置在位於晶圓W的一側的芯體108的內部與位於晶
圓W的另一側的芯體108的內部。在一些實施例中,負電壓產生器106的電極106a可設置在清洗溶液供應裝置112(如,噴桿)的內部(如圖1所示),以提供負電壓至清洗溶液104。雖然負電壓產生器106的電極106a的設置方式是以上述設置方式為例,但本發明並不以此為限。只要負電壓產生器106的電極106a的設置方式可將負電壓提供至清洗溶液104均屬於本發明所涵蓋的範圍。此外,負電壓產生器106可藉由導線106b供電至電極106a(如圖1所示)。
The
此外,晶圓清洗系統100更可包括滾輪(roller)114。在工作狀態,滾輪114接觸晶圓W的邊緣。藉此,滾輪114可帶動晶圓W進行轉動。滾輪114的數量可依據需求進行調整,且不限於圖中所示的數量。
In addition, the
基於上述實施例可知,在晶圓清洗系統100中,由於在清洗製程中,可使用負電壓產生器106提供負電壓至清洗溶液104,因此可有效地防止晶圓W上的金屬在清洗過程中被解離。如此一來,可有效地防止斷路的問題,進而提升良率。
Based on the above embodiments, in the
圖3為根據本發明一實施例的晶圓清洗方法的流程圖。以下,此外,可藉由上述實施例的晶圓清洗系統100來實施圖3的晶圓清洗方法,但用以實施本發明的晶圓清洗方法的晶圓清洗系統並不以此為限。此外,關於晶圓清洗系統100的詳細內容可參考上述實施例的記載,於此不再說明。另外,本實施例的晶圓清洗方法可用於化學機械研磨後清洗製程。
FIG. 3 is a flowchart of a wafer cleaning method according to an embodiment of the present invention. Hereinafter, in addition, the wafer cleaning method of FIG. 3 can be implemented by the
請參照圖1至圖3,進行步驟S100,提供清洗溶液104至晶圓W的表面,其中清洗溶液104具有導電性。在一些實施例中,可藉由清洗溶液供應裝置110將清洗溶液104注入芯體108中,且清洗溶液104可穿過芯體108的孔洞108a(圖2)與晶圓清洗刷102而到達晶圓W的表面,藉此可提供清洗溶液104至晶圓W的表面。在一些實施例中,可藉由清洗溶液供應裝置112(如,噴桿)將清洗溶液104噴灑至晶圓W的表面。雖然提供清洗溶液104至晶圓W的表面的方法是以上述方法為例來進行說明,但本發明並不以此為限。只要是可提供清洗溶液104至晶圓W的表面的方法均屬於本發明所涵蓋的範圍。
Referring to FIG. 1 to FIG. 3 , step S100 is performed to provide a
接著,進行步驟S102,使用晶圓清洗刷102與清洗溶液104對晶圓W的表面進行清洗製程,其中在清洗製程中,使用負電壓產生器106提供負電壓至清洗溶液104。在一些實施例中,在使用晶圓清洗刷102與清洗溶液104對晶圓W的表面進行清洗製程時,芯體108可帶動晶圓清洗刷102來刷洗晶圓W的表面,且滾輪114可帶動晶圓W進行轉動,藉此可清洗晶圓W的整個表面。同時,使用負電壓產生器106提供負電壓至清洗溶液104,以防止晶圓W上的金屬(如,鎢、鋁、銅或鎵,但本發明並不以此為限)在清洗過程中被解離。
Next, step S102 is performed, using the
在一些實施例中,可將負電壓產生器106的電極106a設置在芯體108的內部(如圖1所示),以提供負電壓至清洗溶液104。在一些實施例中,可將負電壓產生器106的電極106a設置在清洗
溶液供應裝置112(如,噴桿)的內部(如圖1所示),以提供負電壓至清洗溶液104。雖然用於提供負電壓至清洗溶液104的方法是以上述方法為例,但本發明並不以此為限。只要是可提供負電壓至清洗溶液104的方法均屬於本發明所涵蓋的範圍。
In some embodiments, the
基於上述實施例可知,在上述晶圓清洗方法中,由於在清洗製程中,可使用負電壓產生器106提供負電壓至清洗溶液104,因此可有效地防止晶圓W上的金屬在清洗過程中被解離。如此一來,可有效地防止斷路的問題,進而提升良率。
Based on the above embodiments, in the above wafer cleaning method, since the
綜上所述,上述實施例的晶圓清洗系統與晶圓清洗方法可有效地防止晶圓上的金屬在清洗過程中被解離,藉此可有效地防止斷路的問題並提升良率。 To sum up, the wafer cleaning system and wafer cleaning method of the above embodiments can effectively prevent the metal on the wafer from being dissociated during the cleaning process, thereby effectively preventing the disconnection problem and improving the yield.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed as above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the scope of the appended patent application as the criterion.
100:晶圓清洗系統 100: Wafer cleaning system
102:晶圓清洗刷 102: Wafer cleaning brush
102a:突出物 102a: Protrusion
104:清洗溶液 104: cleaning solution
106:負電壓產生器 106: Negative voltage generator
106a:電極 106a: electrode
106b:導線 106b: wire
108:芯體 108: Core
110,112:清洗溶液供應裝置 110, 112: cleaning solution supply device
110a:管路 110a: pipeline
112a:噴嘴 112a: Nozzle
114:滾輪 114:Roller
W:晶圓 W: Wafer
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TW202017665A (en) * | 2018-11-02 | 2020-05-16 | 中國鋼鐵股份有限公司 | Metal filter cleaning method and device |
CN112885741A (en) * | 2021-01-08 | 2021-06-01 | 长江存储科技有限责任公司 | Wafer cleaning device and wafer cleaning method |
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CN112885741A (en) * | 2021-01-08 | 2021-06-01 | 长江存储科技有限责任公司 | Wafer cleaning device and wafer cleaning method |
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