TWI780467B - Plasma treatment device with improved plasma treatment verticality - Google Patents

Abstract

The present invention relates to a plasma processing apparatus which improves the verticality of plasma processing, comprising: a chamber constituting a region for processing a substrate with plasma; , and is applied to the substrate to induce the bias power of the plasma; the first part, which is formed on the inner side of the chuck in a way to place the substrate; the second part, which is lower than the height of the first part formed outside the chuck; and a focus ring that covers the second portion and surrounds the first portion in such a manner that the first portion is exposed, the first portion includes: a dielectric portion formed to a width of greater than the width of the substrate, so that the substrate is separated from the second portion and connected to the bottom of the substrate.

Description

Plasma processing apparatus with improved verticality of plasma processing

The invention relates to a plasma processing device which improves the verticality of plasma processing.

As illustrated in FIG. 1 , the plasma processing apparatus is an apparatus that processes a substrate 100 (for example, etching, vapor deposition, etc.) using plasma.

Among the components of the plasma processing apparatus, the focus ring 400 is a main component of the plasma processing apparatus that prevents the chuck 300 on which the substrate 100 is placed from being plasma-processed.

In particular, the focus ring 400 is an essential component for the chuck 300 to which a bias power source 700 for inducing plasma is applied to the substrate 100 .

At this time, the substance constituting the focus ring 400 may be a dielectric (eg, SiO ₂ , Al ₂ O ₃ , etc.) or a semiconductor (eg, Si, etc.).

The chuck 300 for mounting such a focus ring 400 will have a first portion 310 formed on the inner side of the chuck 300 in a manner to mount the substrate 100 and a second portion 310 formed on the outer side of the chuck 300 at a lower height than the first portion 310 . The shape of the two parts 320 .

At this time, during the plasma processing of the substrate 100 , the relationship between the substrate 100 and the focus ring 400 is affected by the shape of the chuck 300 , so that the plasma incident angle is inclined toward the substrate 100 .

In this way, when the plasma incident angle is inclined, the outer side of the substrate 100 is treated by the plasma with an inclined incident angle, and the outer side of the substrate 100 after being treated by the plasma with an inclined incident angle has a problem of inclination (plasma treatment vertical angle) (such as , the problem of etching by tilting to the + side or - side based on the vertical 0 degree; refer to the vertical indicators (vertical indicators)).

Such a problem will reduce the available area of the substrate 100, and the larger the area of the substrate 100, the smaller the available area.

An object of the present invention is to provide a plasma processing apparatus which improves the verticality of plasma processing.

A plasma processing apparatus for improving the verticality of plasma processing according to an embodiment of the present invention includes: a chamber constituting a region for processing a substrate with plasma; a chamber; a first part formed on the inside of the chuck in a manner to accommodate a substrate; a second part formed on the outside of the chuck at a height lower than that of the first part; and a focus ring covering all and surround the first portion so that the first portion is exposed, the first portion includes: a dielectric part formed to have a width greater than that of the substrate so that the substrate and the first The two parts are separated and connected to the bottom of the substrate.

According to an embodiment, the chuck is applied with a bias power source that induces the plasma to the substrate, and the dielectric portion includes: a first dielectric portion region that constitutes a larger portion than that of the dielectric portion. a region in which the outer side is recessed to seat the substrate; and a second dielectric portion region constituting a region formed at a height higher than that of the first dielectric portion region to surround the substrate.

According to an embodiment, the focus ring of the plasma processing apparatus with improved verticality for plasma processing surrounds the second dielectric portion region.

According to an embodiment, the plasma processing apparatus for improving the verticality of plasma processing includes: electrode wires included in the dielectric part, and DC power is applied in a manner of applying an electrostatic force to the substrate, the Electrode lines are located within the first dielectric portion region.

According to an embodiment, the focus ring of the plasma processing apparatus for improving verticality of plasma processing extends inwardly to cover an upper portion of the second dielectric portion region.

According to an embodiment, the upper part of the region of the second dielectric part of the plasma processing apparatus for improving the verticality of plasma processing is covered by a shielding ring that is raised and lowered by a lifting mechanism.

According to an embodiment, the dielectric portion of the plasma processing apparatus with improved verticality of plasma processing includes: a first dielectric portion region constituting a region where the substrate is placed; and a second dielectric portion region constituting In an expanded region extending from the first dielectric portion region and arranged around the substrate, the focus ring extends inward to cover an upper portion of the second dielectric portion region.

A plasma processing apparatus for improving the verticality of plasma processing according to an embodiment of the present invention includes: a chamber constituting a region for processing a substrate with plasma; chamber, and is applied to the substrate to induce the bias power of the plasma; the first part, which is formed in the inner side of the chuck in a manner to seat the substrate; the second part, which is lower than the first part a height formed on the outside of the chuck; and a focus ring covering the second part and covering the outside of the first part in such a manner that the inside of the first part is exposed. On the side, the focus ring includes: a first main body part, which is in contact with the upper surface of the second part; A part of the top is connected.

According to an embodiment, the first part includes: a dielectric part in contact with the lower surface of the substrate; and an electrode wire included in the dielectric part and applied with a DC power supply that applies an electrostatic force to the substrate, The electrode wire extends so as to be located under the second main body.

According to an embodiment, the plasma processing device for improving the verticality of plasma processing includes: a metal layer located at the lower part of the second body part and applied with the electrostatic force of the electrode lines so that the The second main body is in close contact with the dielectric part.

According to an embodiment, the metal layer of the plasma processing device with improved verticality of plasma processing is formed by one of evaporation, gold plating and sputtering.

According to an embodiment, the plasma processing apparatus for improving the verticality of plasma processing includes: a third main body extending to the inner side of the second main body in a stepped manner to cover the outer side of the substrate.

According to an embodiment, the inner upper edge of the third body portion of the plasma processing apparatus for improving the verticality of plasma processing is formed obliquely.

According to an embodiment, the second main body portion of the plasma processing apparatus with improved verticality of plasma processing is formed by extending from the first main body portion.

According to an embodiment, the second body part of the plasma processing apparatus with improved verticality for plasma processing is formed separately from the first body part.

According to an embodiment, in the plasma processing device with improved verticality of plasma processing, the relative permittivity of the material constituting the second body part is higher than that of the material constituting the first body part relative permittivity.

According to an embodiment, the second body part of the plasma processing apparatus for improving the verticality of plasma processing is formed to cover the upper part of the first body part.

According to an embodiment, the second body portion of the plasma processing apparatus with improved verticality for plasma processing is formed to surround the first body portion.

The plasma processing apparatus of the present invention which improves the verticality of plasma processing has the effect of preventing the verticality of plasma processing outside the substrate from inclining.

100: Substrate

200: chamber

300: Chuck

310: Part 1

311: Dielectric Department

311A: first dielectric portion region

311B: second dielectric portion region

312: electrode wire

320: Part Two

400: focus ring

410: The first main body

420: Second main body

421: metal layer

430: The third main body

500: shadow ring

600: lifting mechanism

700: Bias power supply

800:DC power supply

FIG. 1 is a diagram related to a conventional plasma processing apparatus.

FIG. 2 is a diagram of a plasma processing apparatus with improved verticality of plasma processing according to an embodiment of the present invention.

FIG. 3 is a diagram relating to an embodiment different from FIG. 2 .

FIG. 4 is a diagram relating to an embodiment different from FIG. 2 .

FIG. 5 is a diagram relating to an embodiment different from FIG. 2 .

FIG. 6 is a perspective view and a cross-sectional view of the focus ring of the embodiment of FIG. 5 .

FIG. 7 is a diagram relating to an embodiment different from FIG. 5 .

FIG. 8 is a diagram relating to an embodiment different from FIG. 5 .

FIG. 9 is a diagram relating to an embodiment different from FIG. 5 .

FIG. 10 is a diagram relating to an embodiment different from FIG. 5 .

Embodiments of the present invention will be described in detail below with reference to the accompanying drawings, so that those skilled in the art of the present invention can easily implement them.

The present invention can be realized in various forms and is not limited to the embodiments described here.

As illustrated in FIG. 1 , the plasma processing apparatus is an apparatus that processes a substrate 100 (for example, etching, vapor deposition, etc.) using plasma.

Among the components of the plasma processing apparatus, the focus ring 400 is a main component of the plasma processing apparatus that prevents the chuck 300 on which the substrate 100 is placed from being plasma-processed.

In particular, the focus ring 400 is an essential component for the chuck 300 to which a bias power source 700 for inducing plasma is applied to the substrate 100 .

At this time, the substance constituting the focus ring 400 may be a dielectric (eg, SiO ₂ , Al ₂ O ₃ , etc.) or a semiconductor (eg, Si, etc.).

The chuck 300 for mounting such a focus ring 400 will have a first portion 310 formed on the inner side of the chuck 300 in a manner to mount the substrate 100 and a second portion 310 formed on the outer side of the chuck 300 at a lower height than the first portion 310 . The shape of the two parts 320 .

At this time, during the plasma processing of the substrate 100 , the relationship between the substrate 100 and the focus ring 400 is affected by the shape of the chuck 300 , so that the plasma incident angle is inclined toward the substrate 100 .

In this way, when the plasma incident angle is inclined, the outer side of the substrate 100 is treated by the plasma with an inclined incident angle, and there is a plasma treatment vertical angle on the outer side of the substrate 100 after being treated by the plasma with an inclined incident angle. Slant problems (e.g., with vertical 0 degrees is the problem of etching with the reference tilted to the + side or the - side; see vertical indicators (vertical indicators)).

Such a problem will reduce the available area of the substrate 100, and the larger the area of the substrate 100, the smaller the available area.

In order to solve such problems, as shown in FIG. 2 , a plasma processing apparatus for improving the verticality of plasma processing in an embodiment of the present invention includes a chamber 200, a chuck 300, a first part 310, a second part 320, and a focusing Ring 400.

The chamber 200 is a region where the substrate 100 is processed using plasma.

The chuck 300 is positioned in the chamber 200 so that the substrate 100 is placed on top, and a bias power source 700 for inducing plasma to the substrate 100 is applied.

The chuck 300 includes a first part 310 and a second part 320 .

The first portion 310 is formed inside the chuck 300 to protrude upward with a diameter larger than the substrate 100 in a manner of seating the substrate 100 .

The second part 320 is formed outside the chuck 300 at a lower height than the first part 310 .

The focus ring 400 covers the second part 320 and surrounds the first part 310 such that the first part 310 is exposed.

As illustrated in FIG. 2 , the first part 310 of the plasma processing apparatus with improved verticality of plasma processing according to an embodiment of the present invention includes a dielectric part 311 .

The width of the dielectric part 311 is formed larger than the width of the substrate 100 so that the substrate 100 is separated from the second part 320 and is in contact with the lower surface of the substrate 100 .

In order to place the focus ring 400 on the chuck 300 , the second part 320 needs to be formed at a lower height than the first part 310 , and the focus ring 400 needs to be placed in contact with the upper surface of the second part 320 .

However, due to the height difference between the first part 310 and the second part 320 , there is a problem that the incident angle of the plasma is inclined to the first part 310 and the second part 320 .

In order to solve such a problem, in the present invention, instead of making the substrate 100 straddle the first part because the width of the dielectric part 311 is formed smaller than the width of the substrate 100 (that is, the width of the first part 310 is formed smaller than the width of the substrate 100) 310 and the second part 320, the width of the dielectric part 311 is formed larger than the width of the substrate 100 (that is, the width of the first part 310 is formed larger than the width of the substrate 100), so that the substrate 100 and the second part 320 is separated by a distance corresponding to the width by which the dielectric portion 311 extends beyond the width of the substrate 100 .

Thus, the outer side of the substrate 100 is spaced apart from the position where the plasma incident angle is inclined, thereby preventing the inclined plasma incident angle from causing the plasma processing verticality on the outer side of the substrate 100 to be inclined.

In this way, there is an effect of preventing the verticality of the plasma processing on the outer side of the substrate 100 from being inclined.

As shown in FIG. 2 , the dielectric part 311 of the plasma processing apparatus for improving the verticality of plasma processing according to the embodiment of the present invention includes a first dielectric part region 311A and a second dielectric part region 311B.

The first dielectric portion region 311A is an inner region of the dielectric portion 311 that is recessed from the outer side of the dielectric portion 311 (ie, the second dielectric portion region 311B) to accommodate the substrate 100 .

The second dielectric portion region 311B is formed to be higher than the first dielectric portion region 311A to surround the substrate 100 .

In the present invention, the height of the second dielectric portion region 311B is formed higher than that of the first dielectric portion region 311A so that the second dielectric portion region 311B replaces a part performing the role of the focus ring 400 .

That is, the second dielectric portion region 311B is disposed between the substrate 100 and the focus ring 400 so that the second dielectric portion region 311B replaces a part of the function of the focus ring 400 .

The substance constituting such dielectric portion 311 may be, for example, one of Al ₂ O ₃ , AlN, and ceramics.

The second dielectric portion region 311B surrounds the focus ring 400 .

As illustrated in FIG. 2 , the plasma processing apparatus for improving the verticality of plasma processing according to the embodiment of the present invention includes electrode wires 312 .

The electrode lines 312 are included in the dielectric part 311 , and the DC power source 800 is applied so as to apply an electrostatic force to the substrate 100 to bring the substrate 100 into close contact with the dielectric part 311 .

The electrode lines 312 are located in the first dielectric portion region 311A so as to correspond to the width of the substrate 100 .

Continuing with the foregoing, a specific embodiment for preventing the second dielectric portion region 311B from being treated by plasma will be described later.

First, as shown in FIG. 3 , the following features are included.

The focus ring 400 extends inward to cover the upper portion of the second dielectric portion region 311B.

When the focus ring 400 covers the upper portion of the second dielectric portion region 311B, the second dielectric portion region 311B can be prevented from being damaged by plasma processing.

At this time, since the focus ring 400 prevents the second dielectric portion region 311B from being damaged, in terms of the material constituting the dielectric portion 311, in addition to the aforementioned Al ₂ O ₃ , AlN, and Ceramics, it can also be made of It is composed of polyimide (Polyimide), which is relatively less durable than other materials.

Next, as illustrated in FIG. 4 , the following features are included.

The upper portion of the second dielectric portion region 311B is covered by the shield ring 500 raised and lowered by the lifting mechanism 600 .

At this time, the shield ring 500 may further cover the upper portion of the focus ring 400 in addition to the upper portion of the second dielectric portion region 311B.

The shield ring 500 is formed in an annular shape in which a hole having a shape corresponding to the shape of the substrate 100 is formed.

When the shadow ring 500 covers the upper portion of the second dielectric part region 311B, it can prevent the second dielectric part region 311B from being damaged by plasma treatment.

_At this time, since the shielding ring 500 prevents the _second dielectric portion region 311B from being damaged, the material constituting the dielectric portion 311 may be made of It is composed of polyimide (Polyimide), which is relatively less durable than other materials.

As an embodiment different from that shown in the foregoing FIGS. 5 to 10 , the height of the second dielectric portion region 311B can be maintained to be the same as that of the first dielectric portion region 311A, and the upper part of the second dielectric portion region 311B can be covered by the focus ring 400 .

As an example in which such a focus ring 400 covers the upper portion of the second dielectric portion region 311B, as shown in FIG. 5 , the following features are included.

The first dielectric portion region 311A is a region where the substrate 100 is placed.

The second dielectric portion region 311B is an expanded region that extends from the first dielectric portion region 311A and is arranged around the substrate 100 .

The focus ring 400 extends inward to cover the upper portion of the second dielectric portion region 311B.

The embodiment in which the focus ring 400 covers the upper part of the second dielectric portion region 311B will be described in detail later.

As shown in FIG. 5 , the plasma processing apparatus for improving verticality of plasma processing according to an embodiment of the present invention includes a chamber 200 , a chuck 300 , a first part 310 , a second part 320 and a focus ring 400 .

The chamber 200 is a region where the substrate 100 is processed using plasma.

The chuck 300 is positioned in the chamber 200 so that the substrate 100 is placed on top, and a bias power source 700 for inducing plasma to the substrate 100 is applied.

The chuck 300 includes a first part 310 and a second part 320 .

The first portion 310 is formed inside the chuck 300 to protrude upward with a diameter larger than the substrate 100 in a manner of seating the substrate 100 .

The second part 320 is formed outside the chuck 300 at a lower height than the first part 310 .

The focus ring 400 covers the second part 320 and covers the outside of the first part 310 such that the inside of the first part 310 including the part on which the substrate 100 is placed is exposed.

As shown in FIG. 5 , the focus ring 400 of the plasma processing apparatus for improving the verticality of plasma processing according to the embodiment of the present invention includes a first main body 410 and a second main body 420 .

The first body part 410 is in contact with the upper surface of the second part 320 .

The second main body part 420 is formed to be stepped toward the inner side of the first main body part 410 to be in contact with the upper surface of the first part 310 .

During processing of the substrate 100 with plasma, the temperature of the focus ring 400 is raised by the plasma.

At this time, the medium gas that transmits the temperature of the chuck 300 to the substrate 100 is also supplied to the lower portion of the second body part 420 , thereby adjusting the rising temperature of the focus ring 400 .

In addition, the second body part 420 is in contact with the first part 310, thereby preventing the first part 310 from being plasma-treated.

In this way, since the medium gas that transmits the temperature of the chuck 300 is supplied to the lower portion of the second main body portion 420 , there is an effect that the temperature of the focus ring 400 can be adjusted.

In addition, the second body part 420 is in contact with the first part 310, thereby having an effect of preventing the first part 310 from being treated by plasma.

As shown in FIG. 5 , the first part 310 of the plasma processing apparatus for improving the verticality of plasma processing according to the embodiment of the present invention includes a dielectric part 311 and an electrode line 312 .

The dielectric portion 311 is in contact with the lower surface of the substrate 100 .

The substance constituting such dielectric 311 may be composed of, for example, one of polyimide (Polyimide), Al ₂ O ₃ , AlN, and ceramics (Ceramics).

The electrode lines 312 are included in the dielectric part 311 , and the DC power source 800 is applied so as to apply an electrostatic force to the substrate 100 to bring the substrate 100 into close contact with the dielectric part 311 .

The electrode wire 312 extends so as to be located under the second body part 420 .

At this time, the width of the electrode line 312 may be formed wider than the width of the substrate 100 .

As illustrated in FIG. 6 , the plasma processing apparatus for improving verticality of plasma processing according to an embodiment of the present invention includes a metal layer 421 .

The metal layer 421 is located at the lower part of the second body part 420 , and is exerted by the electrostatic force of the electrode lines 312 , so that the second body part 420 and the dielectric part 311 are in close contact.

The metal layer 421 is formed by one of deposition, plating and sputtering.

In this way, electrostatic force is applied to the metal layer 421 , thereby preventing the focus ring 400 from warping.

As illustrated in FIG. 7 , the plasma processing apparatus for improving verticality of plasma processing according to an embodiment of the present invention includes a third body part 430 .

The third main body portion 430 extends to the inner side of the second main body portion 420 to cover the outer side of the substrate 100 in a stepped manner.

The height of the third body part 430 is formed smaller than that of the second body part 420 .

The inner upper edge of the third body part 430 is formed obliquely, so as to reduce the shielded area of the substrate 100 that is shielded by the third body part 430 and is not processed.

For reference, although FIG. 5 , FIG. 6 , FIG. 8 , FIG. 9 and FIG. 10 do not show that the third body part 430 is included, the third body part 430 may be included as needed.

In the plasma processing apparatus that improves the verticality of plasma processing according to the embodiment of the present invention, as shown in FIG. As shown, the second body part 420 may be formed separately from the first body part 410 .

A specific embodiment of the case where the second body part 420 is formed separately from the first body part 410 will be described later.

First, the relative permittivity of the material constituting the second body part 420 may be higher than the relative permittivity of the material constituting the first body part 410 .

Second, as illustrated in FIG. 9 , the second body part 420 may be formed to cover an upper portion of the first body part 410 .

Third, as illustrated in FIG. 10 , the second body part 420 may be formed to surround the first body part 410 .

The aforementioned first, second and third embodiments can be implemented separately or in combination of two or more of them.

Although the present invention has been described in detail through preferred embodiments, the present invention is not limited thereto but can be variously implemented within the scope of the claims.

100: Substrate

200: chamber

300: Chuck

310: Part 1

311: Dielectric Department

311A: first dielectric portion region

311B: second dielectric portion region

312: electrode wire

320: Part Two

400: focus ring

700: Bias power supply

800: DC power supply

Claims (13)

A plasma processing apparatus which improves the verticality of plasma processing, comprising: a chamber constituting a region for processing a substrate with a plasma; chamber; a first part, which is formed on the inner side of the chuck in a manner to accommodate the substrate; a second part, which is formed on the outer side of the chuck at a height lower than the first part; and a focus ring, which covers the second part, and surrounding the first part in such a manner that the first part is exposed, the first part includes: a dielectric part formed to have a width greater than that of the substrate so as to separate the substrate from the second part, and is in contact with the lower surface of the substrate; and an electrode line, which is included in the dielectric part, and is applied with a DC power supply in the manner of applying an electrostatic force to the substrate, and the dielectric part includes: a first dielectric part region, which constitutes a region recessed from the outer side of the dielectric portion to accommodate the substrate; and a second dielectric portion region constituting a region formed to surround the substrate at a height higher than that of the first dielectric portion region, and is formed by the first dielectric portion integrally formed by extending the region, the chuck is applied with a bias power source that induces the plasma to the substrate, The focus ring surrounds the second dielectric part area, and the electrode wire is located in the first dielectric part area. According to the plasma processing apparatus with improved verticality of plasma processing according to Claim 1, wherein the focus ring extends inwardly to cover the upper part of the second dielectric portion region. According to claim 1, the plasma processing apparatus with improved verticality of plasma processing, wherein the upper part of the second dielectric part area is covered by a shadow ring lifted by a lifting mechanism. A plasma processing apparatus which improves the verticality of plasma processing, comprising: a chamber constituting a region for processing a substrate with a plasma; chamber; a first part, which is formed on the inner side of the chuck in a manner to accommodate the substrate; a second part, which is formed on the outer side of the chuck at a height lower than the first part; and a focus ring, which covers The second part, which covers the outside of the first part in such a way that the inside of the first part is exposed, the focus ring includes: a first main body part, which is in contact with the upper surface of the second part; and a second main body part, which constitutes a step and is formed toward the inner side of the first main body part to meet the upper surface of the first part, The first part includes: a dielectric part, which is in contact with the lower surface of the substrate; and an electrode line, which is included in the dielectric part, and is applied with a DC power supply that applies electrostatic force to the substrate, and is positioned on the second body. part, the plasma processing device for improving the verticality of plasma processing further includes: a metal layer, which is located at the lower part of the second body part, and is applied with the electrostatic force of the electrode line, so that the The second main body is in close contact with the dielectric part. According to claim 4, the plasma processing device with improved verticality of plasma processing, wherein the metal layer is formed by one of evaporation, gold plating and sputtering. The plasma processing apparatus with improved verticality of plasma processing according to Claim 4, further comprising: a third main body extending to the inner side of the second main body in a stepped manner to cover the outer side of the substrate. According to claim 6, the plasma processing apparatus with improved verticality of plasma processing, wherein the inner upper edge of the third main body is formed obliquely. According to the plasma processing apparatus with improved verticality of plasma processing according to Claim 4, wherein the second body part is formed by extending the first body part. According to claim 4, the plasma processing apparatus with improved verticality of plasma processing, wherein the second body part is formed separately from the first body part. According to claim 9, the plasma processing apparatus with improved verticality of plasma processing, wherein the relative permittivity of the substance constituting the second body part is higher than the relative permittivity of the substance constituting the first body part . A plasma processing device that improves the verticality of plasma processing, including: A chamber constituting a region for processing a substrate with a plasma; a chuck located in the chamber in such a manner that the substrate is placed on top; a first portion formed on the chuck in such a manner that the substrate is placed a second part, which is formed on the outer side of the chuck at a height lower than the first part; and a focus ring, which covers the second part and covers the first part in such a way that the inner side of the first part is exposed The outer side of the first part, the focus ring includes: a first body part, which is in contact with the upper surface of the second part; The top of the first part is connected, the second body part is formed separately from the first body part, and the relative permittivity of the material constituting the second body part is higher than that of the material constituting the first body part; The first part includes: a dielectric part formed to have a width greater than the width of the substrate; and an electrode line, which is included in the dielectric part and applies an electrostatic force to the substrate, the electrode line having a width wider than the width of the substrate width. According to claim 9 or 11, the plasma processing apparatus with improved verticality of plasma processing, wherein the second body part is formed to cover the upper part of the first body part. Plasma treatment with improved verticality of plasma treatment according to claim 12 The processing device, wherein the second body portion is formed to surround the first body portion.

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