TWI754325B - Plasma treatment device including a focus ring with improved plasma treatment vertical angle - Google Patents

Plasma treatment device including a focus ring with improved plasma treatment vertical angle Download PDF

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TWI754325B
TWI754325B TW109124243A TW109124243A TWI754325B TW I754325 B TWI754325 B TW I754325B TW 109124243 A TW109124243 A TW 109124243A TW 109124243 A TW109124243 A TW 109124243A TW I754325 B TWI754325 B TW I754325B
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plasma processing
body portion
focus ring
substrate
processing apparatus
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TW109124243A
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TW202123299A (en
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金龍洙
金亨源
鄭熙錫
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南韓商吉佳藍科技股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

Abstract

本發明涉及一種包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置，包括：腔室，其為利用電漿處理基板的區域；卡盤，其位於腔室，以在頂部安放基板；第一部分，其形成於卡盤的內側，以安放基板；第二部分，其以低於第一部分的高度形成於卡盤的外側；以及聚焦環，其覆蓋第二部分，並以第一部分的內側露出的方式覆蓋第二部分的外側，聚焦環包括：第一主體部，其與第二部分的頂面相接；以及第二主體部，其在第一主體部的內側構成臺階地形成而與第一部分的頂面相接。The present invention relates to a plasma processing apparatus including a focus ring with improved plasma processing verticality, comprising: a chamber, which is an area for processing a substrate with plasma; a chuck, located in the chamber, to mount the substrate on top a first part, which is formed on the inner side of the chuck to accommodate the substrate; a second part, which is formed on the outer side of the chuck with a lower height than the first part; The inner side is exposed to cover the outer side of the second part, and the focus ring includes: a first main body part, which is in contact with the top surface of the second part; Meets the top surface of the first part.

Description

包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置Plasma processing apparatus including focus ring with improved plasma processing squareness

本發明涉及一種包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置。The present invention relates to a plasma processing apparatus including a focus ring with improved plasma processing squareness.

如圖1所繪示，電漿處理裝置是利用電漿處理基板100（例如，刻蝕、蒸鍍等）的裝置。As shown in FIG. 1 , the plasma processing apparatus is an apparatus that uses plasma to process the substrate 100 (eg, etching, vapor deposition, etc.).

電漿處理裝置的構件中，聚焦環400是用於防止安放基板100的卡盤300受到電漿處理的電漿處理裝置中的主要構件。Among the components of the plasma processing apparatus, the focus ring 400 is a main component in the plasma processing apparatus for preventing the chuck 300 on which the substrate 100 is placed from being subjected to plasma processing.

尤其，對於被施加向基板100誘導電漿的偏置電源的卡盤300，聚焦環400是必備的構件。In particular, the focus ring 400 is an essential component for the chuck 300 to which a bias power source for inducing plasma to the substrate 100 is applied.

此時，構成聚焦環400的材料可以是電介質（例如，SiO2 ，Al2 O3 等）或半導體（例如，Si等）。At this time, the material constituting the focus ring 400 may be a dielectric (eg, SiO 2 , Al 2 O 3 , etc.) or a semiconductor (eg, Si, etc.).

在這樣的包括聚焦環400的電漿處理裝置利用電漿處理基板100的過程中，包括基板100的外側的基板100與聚焦環400之間的周邊受到更多的基板100側誘導力（induced force；將電漿拉向卡盤的力）的影響，因而電漿入射角（plasma incident angle）會向基板100側傾斜。In such a process that the plasma processing apparatus including the focus ring 400 processes the substrate 100 by plasma, the periphery between the substrate 100 including the outer side of the substrate 100 and the focus ring 400 is subjected to more induced force on the substrate 100 side. ; the force that pulls the plasma toward the chuck), so that the plasma incident angle is inclined toward the substrate 100 side.

如此，當電漿入射角傾斜時，基板100的外側被入射角傾斜的電漿處理，而被入射角傾斜的電漿處理的基板100的外側存在電漿處理垂直度（plasma treatment vertical angle）傾斜的問題（例如，以垂直的0度為基準向+側或-側傾斜而進行刻蝕的問題；參考垂直指標（vertical indicators））。In this way, when the incident angle of the plasma is inclined, the outer side of the substrate 100 is treated by the plasma with the inclined incident angle, and the outer side of the substrate 100 subjected to the plasma treatment with the inclined incident angle has a plasma treatment vertical angle (plasma treatment vertical angle). (e.g., etch issues that are tilted to the + or - side with respect to 0 degrees vertical; see vertical indicators).

這樣的問題會導致基板100的可利用面積減少，基板100的面積變得越大，且可利用面積變得越小。Such a problem may cause the usable area of the substrate 100 to decrease, and the area of the substrate 100 becomes larger and the usable area becomes smaller.

技術問題technical problem

本發明的目的在於，提供一種包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置。It is an object of the present invention to provide a plasma processing apparatus comprising a focus ring with improved plasma processing perpendicularity.

技術方案Technical solutions

本發明的實施例的包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置包括：腔室，其為利用電漿處理基板的區域；卡盤，其位於腔室，以在頂部安放基板；第一部分，其形成於卡盤的內側，以安放基板；第二部分，其以低於第一部分的高度形成於卡盤的外側；以及聚焦環，其覆蓋第二部分，並以第一部分的內側露出的方式覆蓋第二部分的外側，聚焦環包括：第一主體部，其與第二部分的頂面相接；以及第二主體部，其在第一主體部的內側構成臺階狀構造而與第一部分的頂面相接。A plasma processing apparatus including a focus ring with improved plasma processing verticality of an embodiment of the present invention includes: a chamber, which is an area where the substrate is processed with plasma; a chuck, located in the chamber, to rest on top a substrate; a first portion formed on the inner side of the chuck to accommodate the substrate; a second portion formed on the outer side of the chuck at a lower height than the first portion; and a focus ring covering the second portion and extending to the first portion Covering the outside of the second part in such a way that the inner side is exposed, the focus ring includes: a first main body part, which is in contact with the top surface of the second part; and a second main body part, which forms a stepped structure on the inner side of the first main body part And it is in contact with the top surface of the first part.

根據一實施例，在包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置中，第一部分包括：電介質，其與基板的底面相接；以及電極線，其包含於電介質中，電極線以位於第二主體部的底部的方式延伸。According to one embodiment, in a plasma processing apparatus including a focus ring with improved plasma processing squareness, the first portion includes: a dielectric that interfaces with the bottom surface of the substrate; and electrode lines contained in the dielectric, the electrodes The wire extends so as to be at the bottom of the second body portion.

根據一實施例，在具有包括改善的電漿處理垂直度的聚焦環的電漿處理裝置包括：金屬層，其位於第二主體部的底部，且被施加電極線的靜電力，以使第二主體部與電介質緊貼。According to one embodiment, in a plasma processing apparatus having a focus ring including improved plasma processing verticality, a metal layer is located at the bottom of the second body portion and is applied with electrostatic force of the electrode lines to cause the second The main body is in close contact with the dielectric.

根據一實施例，在具有包括改善的電漿處理垂直度的聚焦環的電漿處理裝置中，金屬層採用蒸鍍、鍍金及濺射中的任一方法形成。According to one embodiment, in a plasma processing apparatus having a focus ring including improved plasma processing squareness, the metal layer is formed using any of evaporation, gold plating, and sputtering.

根據一實施例，在包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置包括：第三主體部，其構成臺階狀構造並向第二主體部的內側延伸而覆蓋基板的外側。According to one embodiment, a plasma processing apparatus including a focus ring with improved plasma processing verticality includes a third body portion having a stepped configuration and extending inwardly of the second body portion to cover the outer side of the substrate.

根據一實施例，在包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置中，第三主體部的內側傾斜地形成頂部棱邊。According to an embodiment, in a plasma processing apparatus including a focus ring with improved plasma processing verticality, the inner side of the third body portion is inclined to form a top edge.

根據一實施例，在包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置中，第二主體部由第一主體部延伸而形成。According to an embodiment, in a plasma processing apparatus including a focus ring with improved plasma processing perpendicularity, the second body portion is formed by extending the first body portion.

根據一實施例，在包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置中，第二主體部與第一主體部分開形成。According to an embodiment, in a plasma processing apparatus including a focus ring with improved plasma processing squareness, the second body portion is formed separately from the first body portion.

根據一實施例，在包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置中，構成第二主體部的材料的相對介電常數（Relative Permittivity）高於構成第一主體部的材料的相對介電常數。According to an embodiment, in a plasma processing apparatus including a focus ring with improved plasma processing squareness, the material constituting the second body portion has a higher relative permittivity (Relative Permittivity) than the material constituting the first body portion The relative dielectric constant of .

根據一實施例，在包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置中，第二主體部形成為覆蓋第一主體部的頂部。According to an embodiment, in a plasma processing apparatus including a focus ring with improved plasma processing verticality, the second body portion is formed to cover the top of the first body portion.

根據一實施例，在包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置中，第二主體部形成為包圍第一主體部。According to an embodiment, in a plasma processing apparatus including a focus ring with improved plasma processing perpendicularity, the second body portion is formed to surround the first body portion.

發明的效果effect of invention

聚焦環的介電常數在由第二主體部趨向第一主體部的過程中梯段式地變化，從而具有防止電漿處理垂直度傾斜的效果。The dielectric constant of the focus ring changes stepwise in the process from the second main body portion to the first main body portion, thereby having the effect of preventing the verticality of the plasma processing from being inclined.

下面將參考附圖對本發明的實施例進行詳細說明，以便本發明所屬技術領域具有通常知識者能夠容易實施。Hereinafter, the embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those with ordinary knowledge in the technical field to which the present invention pertains can be easily implemented.

本發明可以藉由多種不同的方式實現，並不限於此處說明的實施例。The present invention can be implemented in many different ways and is not limited to the embodiments described herein.

如圖1所繪示，電漿處理裝置是利用電漿處理基板100（例如，刻蝕、蒸鍍等）的裝置。As shown in FIG. 1 , the plasma processing apparatus is an apparatus that uses plasma to process the substrate 100 (eg, etching, vapor deposition, etc.).

電漿處理裝置的構件中，聚焦環400是防止安放基板100的卡盤300受到電漿處理的電漿處理裝置中的主要構件。Among the components of the plasma processing apparatus, the focus ring 400 is the main component in the plasma processing apparatus for preventing the chuck 300 on which the substrate 100 is placed from being subjected to plasma processing.

尤其，對於被施加向基板100誘導電漿的偏置電源的卡盤300，聚焦環400是必備構件。In particular, the focus ring 400 is an essential component for the chuck 300 to which a bias power source for inducing plasma to the substrate 100 is applied.

此時，構成聚焦環400的材料可以是電介質（例如，SiO2 ，Al2 O3 等）或半導體（例如，Si等）。At this time, the material constituting the focus ring 400 may be a dielectric (eg, SiO 2 , Al 2 O 3 , etc.) or a semiconductor (eg, Si, etc.).

在這樣的包括聚焦環400的電漿處理裝置利用電漿處理基板100的過程中，包括基板100的外側的基板100與聚焦環400之間的周邊受到更多的基板100側誘導力（induced force；將電漿拉向卡盤的力）的影響，因而電漿入射角（plasma incident angle）會向基板100側傾斜。In such a process that the plasma processing apparatus including the focus ring 400 processes the substrate 100 by plasma, the periphery between the substrate 100 including the outer side of the substrate 100 and the focus ring 400 is subjected to more induced force on the substrate 100 side. ; the force that pulls the plasma toward the chuck), so that the plasma incident angle is inclined toward the substrate 100 side.

如此，當電漿入射角傾斜時，基板100的外側被入射角傾斜的電漿處理，而被入射角傾斜的電漿處理的基板100的外側存在電漿處理垂直度（plasma treatment vertical angle）傾斜的問題（例如，以垂直的0度為基準向+側或-側傾斜而進行刻蝕的問題；參考垂直指標（vertical indicators））。In this way, when the incident angle of the plasma is inclined, the outer side of the substrate 100 is treated by the plasma with the inclined incident angle, and the outer side of the substrate 100 subjected to the plasma treatment with the inclined incident angle has a plasma treatment vertical angle (plasma treatment vertical angle). (e.g., etch issues that are tilted to the + or - side with respect to 0 degrees vertical; see vertical indicators).

這樣的問題會導致基板100的可利用面積減少，基板100的面積變得越大，且可利用面積變得越小。Such a problem may cause the usable area of the substrate 100 to decrease, and the area of the substrate 100 becomes larger and the usable area becomes smaller.

為了解決這樣的問題，如圖2所繪示，本發明的實施例的包括具有改善的電漿處理垂直度的聚焦環400的電漿處理裝置包括腔室200、卡盤300、第一部分310、第二部分320以及聚焦環400。In order to solve such a problem, as shown in FIG. 2, the plasma processing apparatus including the focus ring 400 with improved plasma processing verticality of the embodiment of the present invention includes a chamber 200, a chuck 300, a first portion 310, The second part 320 and the focus ring 400 .

腔室200是利用電漿處理基板100的區域。The chamber 200 is a region where the substrate 100 is processed with plasma.

卡盤300位於腔室200，以在頂部安放基板100。The chuck 300 is located in the chamber 200 to mount the substrate 100 on top.

第一部分310以大於基板100的直徑向頂部凸出而形成於卡盤300的內側，以安放基板100。The first portion 310 is formed on the inner side of the chuck 300 to protrude toward the top with a diameter larger than the diameter of the substrate 100 to accommodate the substrate 100 .

第二部分320以低於第一部分310的高度形成於卡盤300的外側。The second part 320 is formed on the outer side of the chuck 300 at a lower height than the first part 310 .

聚焦環400覆蓋第二部分320，並以包括安放基板100的部分的第一部分310的內側露出的方式覆蓋第一部分310的外側。The focus ring 400 covers the second part 320 and covers the outside of the first part 310 in such a manner that the inside of the first part 310 including the part where the substrate 100 is placed is exposed.

如圖2所繪示，本發明的實施例的包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置的聚焦環400包括第一主體部410及第二主體部420。As shown in FIG. 2 , a focus ring 400 of a plasma processing apparatus including a focus ring with improved plasma processing verticality according to an embodiment of the present invention includes a first body portion 410 and a second body portion 420 .

第一主體部410與第二部分320的頂面相接。The first main body part 410 is in contact with the top surface of the second part 320 .

第二主體部420在第一主體部410的內側構成臺階狀構造並與第一部分310的頂面相接。The second main body portion 420 has a stepped structure inside the first main body portion 410 and is in contact with the top surface of the first portion 310 .

如圖4所繪示，就第二主體部420而言，根據基板100的寬度，向內側延伸的長度可以不同。As shown in FIG. 4 , for the second main body portion 420 , the lengths extending inward may be different according to the width of the substrate 100 .

第二主體部420的高度形成得小於第一主體部410的高度，且介電常數與高度成反比，因而第二主體部420的介電常數形成得高於第一主體部410的介電常數。The height of the second body portion 420 is formed to be smaller than the height of the first body portion 410 , and the dielectric constant is inversely proportional to the height, so the dielectric constant of the second body portion 420 is formed to be higher than that of the first body portion 410 .

即，介電常數在由第二主體部420趨向第一主體部410的過程中梯段式地變化。That is, the dielectric constant changes stepwise in the process from the second body portion 420 to the first body portion 410 .

此外，由於誘導力（induced force；將電漿拉向卡盤的力）與介電常數成反比，針對基板100與第一主體部410之間更受基板100側誘導力的影響的現象，在基板100與第一主體部410之間，使第二主體部420的誘導力的大小在由基板100趨向第一主體部410的過程中發生變化來防止更受基板100側誘導力的影響，從而防止電漿的垂直度傾斜。In addition, since the induced force (the force that pulls the plasma toward the chuck) is inversely proportional to the dielectric constant, with respect to the phenomenon that the substrate 100 and the first main body portion 410 are more affected by the induced force on the substrate 100 side, in Between the substrate 100 and the first main body portion 410 , the magnitude of the inductive force of the second main body portion 420 is changed during the process of moving from the substrate 100 to the first main body portion 410 , so as to prevent it from being more influenced by the inductive force on the substrate 100 side. Prevent the verticality of the plasma from tilting.

此外，在用電漿處理基板100的過程中，電漿會使聚焦環400的溫度上升。In addition, during the plasma treatment of the substrate 100, the temperature of the focus ring 400 may be increased by the plasma.

此時，向基板100傳遞卡盤300的溫度的媒介氣體也會被供應至第二主體部420的底部，從而會調節聚焦環400的上升的溫度。At this time, the medium gas that transmits the temperature of the chuck 300 to the substrate 100 is also supplied to the bottom of the second main body portion 420 , so that the rising temperature of the focus ring 400 is adjusted.

此外，第二主體部420與第一部分310的頂面相接，從而防止第一部分310被電漿處理。In addition, the second body part 420 is in contact with the top surface of the first part 310, thereby preventing the first part 310 from being plasma-treated.

如此，由第二主體部420趨向第一主體部410，介電常數梯段式地變化，從而具有防止電漿處理垂直度傾斜的效果。In this way, from the second main body portion 420 to the first main body portion 410 , the dielectric constant changes in a stepwise manner, thereby having the effect of preventing the inclination of the verticality of the plasma treatment.

此外，由於向第二主體部420的底部供應傳遞卡盤300的溫度的媒介氣體，因而具有能夠調節聚焦環400的溫度的效果。In addition, since the medium gas that transmits the temperature of the chuck 300 is supplied to the bottom of the second main body portion 420 , there is an effect that the temperature of the focus ring 400 can be adjusted.

此外，第二主體部420與第一部分310的頂面相接，從而具有防止第一部分310被電漿處理的效果。In addition, the second body portion 420 is in contact with the top surface of the first portion 310, thereby having the effect of preventing the first portion 310 from being plasma-treated.

如圖2所繪示，本發明的實施例的包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置的第一部分310包括電介質311及電極線312。As depicted in FIG. 2 , a first portion 310 of a plasma processing apparatus including a focus ring with improved plasma processing squareness of an embodiment of the present invention includes a dielectric 311 and electrode lines 312 .

電介質311與基板100的底面相接。The dielectric 311 is in contact with the bottom surface of the substrate 100 .

構成這種電介質311的材料例如可以由聚酚亞胺（Polyimid）、Al2 O3 、AlN、陶瓷（Ceramics）中的任一種構成。The material constituting the dielectric 311 may be, for example, any one of polyphenolimide, Al 2 O 3 , AlN, and ceramics.

電介質311包含電極線312。The dielectric 311 includes electrode lines 312 .

電極線312向基板100施加靜電力（electrostatic force），以使基板100緊貼於電介質311。The electrode lines 312 apply electrostatic force to the substrate 100 , so that the substrate 100 is in close contact with the dielectric 311 .

電極線312以位於第二主體部420的底部的方式延伸。The electrode wire 312 extends so as to be located at the bottom of the second body portion 420 .

此時，電極線312的寬度可以形成的比基板100的寬度寬。At this time, the width of the electrode line 312 may be formed to be wider than the width of the substrate 100 .

如圖3所繪示，本發明的實施例的包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置包括金屬層421。As shown in FIG. 3 , a plasma processing apparatus including a focus ring with improved plasma processing squareness of an embodiment of the present invention includes a metal layer 421 .

金屬層421位於第二主體部420的底部，電極線312的靜電力（electrostatic force）施加於金屬層421，以使第二主體部420以金屬層421為媒介與電介質311緊貼。The metal layer 421 is located at the bottom of the second body portion 420 , and the electrostatic force of the electrode lines 312 is applied to the metal layer 421 , so that the second body portion 420 is in close contact with the dielectric 311 through the metal layer 421 .

金屬層421採用蒸鍍（Deposition）、鍍金（Plating）及濺射（Sputtering）中的任一方法形成。The metal layer 421 is formed by any one of vapor deposition (deposition), gold plating (plating), and sputtering (sputtering).

如此，金屬層421被施加靜電力，從而具有防止聚焦環400翹起的效果。In this way, electrostatic force is applied to the metal layer 421, thereby having the effect of preventing the focus ring 400 from being lifted.

如圖5所繪示，本發明的實施例的包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置包括第三主體部430。As shown in FIG. 5 , a plasma processing apparatus including a focus ring with improved plasma processing verticality of an embodiment of the present invention includes a third body portion 430 .

第三主體部430構成臺階狀構造向第二主體部420的內側延伸而覆蓋基板100的外側。The third main body portion 430 has a stepped structure and extends toward the inner side of the second main body portion 420 to cover the outer side of the substrate 100 .

第三主體部430的高度形成得小於第二主體部420的高度。The height of the third body portion 430 is formed to be smaller than the height of the second body portion 420 .

第三主體部430的內側傾斜地形成頂部棱邊，從而能夠減少基板100被第三主體部430遮擋而未被處理的陰影區域。The inner side of the third main body part 430 is inclined to form a top edge, so that the shadow area where the substrate 100 is blocked by the third main body part 430 and not processed can be reduced.

作為參考，雖然圖2、圖3、圖4、圖6、圖7及圖8中未示出包括第三主體部430，但是，根據需要，可以本發明的實施例可以包括第三主體部430。For reference, although FIG. 2 , FIG. 3 , FIG. 4 , FIG. 6 , FIG. 7 and FIG. 8 are not shown to include the third main body part 430 , the embodiment of the present invention may include the third main body part 430 as required. .

在本發明的實施例的包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置中，如圖2所繪示，第二主體部420可以由第一主體部410延伸而形成，或者，如圖6所繪示，第二主體部420可以與第一主體部410分開形成。In a plasma processing apparatus including a focus ring with improved plasma processing verticality according to an embodiment of the present invention, as shown in FIG. 2 , the second body portion 420 may be formed by extending the first body portion 410 , or As shown in FIG. 6 , the second body portion 420 may be formed separately from the first body portion 410 .

對於第二主體部420與第一主體部410分開形成的情況的具體實施例將在後面進行說明。A specific example of the case where the second main body part 420 and the first main body part 410 are formed separately will be described later.

第一、構成第二主體部420的材料的相對介電常數（Relative Permittivity）可以具有高於構成第一主體部410的材料的相對介電常數。First, the relative permittivity (Relative Permittivity) of the material constituting the second body portion 420 may be higher than the relative permittivity of the material constituting the first body portion 410 .

由此，類似於前述透過高度使介電常數在由第二主體部420趨向第一主體部410的過程中梯段式地變化，透過具備相對介電常數不同的第一主體部410和第二主體部420，能夠防止電漿處理垂直度傾斜。Therefore, similar to the aforementioned transmission height, the dielectric constant changes in a stepwise manner in the process from the second main body portion 420 to the first main body portion 410 . The main body portion 420 can prevent the plasma processing verticality from being inclined.

作為參考，雖然在圖6中示出第一主體部410和第二主體部420的高度不同，但是，隨著第一主體部410和第二主體部420的高度相同或第二主體部420的高度大於第一主體部410的高度，第一主體部410和第二主體部420的相對介電常數可以不同。For reference, although the heights of the first body part 410 and the second body part 420 are shown to be different in FIG. 6 , as the heights of the first body part 410 and the second body part 420 are the same or the height of the second body part 420 The height is greater than that of the first body part 410, and the relative permittivity of the first body part 410 and the second body part 420 may be different.

第二、如圖7所繪示，第二主體部420可以形成為覆蓋第一主體部410的頂部。Second, as shown in FIG. 7 , the second body portion 420 may be formed to cover the top of the first body portion 410 .

第三、如圖8所繪示，第二主體部420可以形成為包圍第一主體部410。Third, as shown in FIG. 8 , the second body portion 420 may be formed to surround the first body portion 410 .

前述第一、第二及第三實施例可以分別實施或組合其中兩者以上而實施。The aforementioned first, second and third embodiments may be implemented separately or in combination of two or more of them.

儘管透過較佳實施例對本發明進行了詳細說明，但本發明不限於此，而是可以在申請專利範圍所限定的範圍內進行多樣地實施。Although the present invention has been described in detail through preferred embodiments, the present invention is not limited thereto, but can be variously implemented within the scope defined by the scope of the claims.

100:基板 200:腔室 300:卡盤 310:第一部分 311:電介質 312:電極線 320:第二部分 400:聚焦環 410:第一主體部 420:第二主體部 421:金屬層 430:第三主體部100: Substrate 200: Chamber 300: Chuck 310: Part One 311: Dielectric 312: Electrode wire 320: Part II 400: Focus Ring 410: The first main body 420: Second main body 421: Metal Layer 430: The third main body

圖1是習知的電漿處理裝置的圖。 圖2是關於本發明的實施例的包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置的圖。 圖3是本發明的實施例的聚焦環的立體圖及剖視圖。 圖4是關於不同於圖2的實施例的圖。 圖5是關於不同於圖2的實施例的圖。 圖6是關於不同於圖2的實施例的圖。 圖7是關於不同於圖2的實施例的圖。 圖8是關於不同於圖2的實施例的圖。FIG. 1 is a diagram of a conventional plasma processing apparatus. 2 is a diagram of a plasma processing apparatus including a focus ring with improved plasma processing squareness, pertaining to an embodiment of the present invention. 3 is a perspective view and a cross-sectional view of the focus ring according to the embodiment of the present invention. FIG. 4 is a diagram concerning an embodiment different from that of FIG. 2 . FIG. 5 is a diagram concerning an embodiment different from that of FIG. 2 . FIG. 6 is a diagram concerning an embodiment different from FIG. 2 . FIG. 7 is a diagram concerning an embodiment different from that of FIG. 2 . FIG. 8 is a diagram relating to an embodiment different from FIG. 2 .

100:基板100: Substrate

200:腔室200: Chamber

300:卡盤300: Chuck

310:第一部分310: Part One

311:電介質311: Dielectric

312:電極線312: Electrode wire

320:第二部分320: Part II

400:聚焦環400: Focus Ring

410:第一主體部410: The first main body

420:第二主體部420: Second main body

421:金屬層421: Metal Layer

Claims (9)

一種包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置，包括： 一腔室，其為利用電漿處理一基板的區域； 一卡盤，其位於該腔室，且在該卡盤頂部安放有該基板； 一第一部分，其形成於該卡盤的內側，以安放該基板； 一第二部分，其以低於該第一部分的高度形成於該卡盤的外側；以及 一聚焦環，其覆蓋該第二部分，並以該第一部分的內側露出的方式覆蓋該第二部分的外側， 該聚焦環包括： 一第一主體部，其與該第二部分的頂面相接； 一第二主體部，其在該第一主體部的內側構成臺階狀構造而與該第一部分的頂面相接； 一金屬層，其位於該第二主體部的底部， 該第一部分包括： 一電介質，其與該基板的底面相接；以及 一電極線，其包含於該電介質中， 該電極線以位於該第二主體部的底部的方式延伸， 該電極線的靜電力施加於該金屬層，以使該第二主體部與該電介質緊貼。A plasma processing apparatus including a focus ring with improved plasma processing squareness, comprising: a chamber, which is an area for processing a substrate with plasma; a chuck located in the chamber and with the substrate mounted on top of the chuck; a first portion formed on the inner side of the chuck to accommodate the substrate; a second portion formed on the outside of the chuck at a lower height than the first portion; and a focus ring covering the second part and covering the outside of the second part in such a way that the inside of the first part is exposed, The focus ring includes: a first main body part connected to the top surface of the second part; a second main body part, which forms a stepped structure on the inner side of the first main body part and is connected with the top surface of the first part; a metal layer located at the bottom of the second body portion, This first part includes: a dielectric in contact with the bottom surface of the substrate; and an electrode wire contained in the dielectric, The electrode wire extends in a manner of being located at the bottom of the second body portion, The electrostatic force of the electrode wire is applied to the metal layer, so that the second main body portion is closely attached to the dielectric. 如請求項1所述的包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置，其中， 該金屬層採用蒸鍍、鍍金及濺射中的任一方法形成。A plasma processing apparatus including a focus ring with improved plasma processing squareness as recited in claim 1, wherein, The metal layer is formed by any one of vapor deposition, gold plating, and sputtering. 如請求項1所述的包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置，其包括： 一第三主體部，其構成臺階狀構造，且向該第二主體部的內側延伸而覆蓋該基板的外側。A plasma processing apparatus including a focus ring with improved plasma processing squareness as recited in claim 1, comprising: a third main body part, which forms a stepped structure and extends to the inner side of the second main body part to cover the outer side of the substrate. 如請求項3所述的包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置，其中， 該第三主體部的內側傾斜地形成頂部棱邊。A plasma processing apparatus including a focus ring with improved plasma processing squareness as recited in claim 3, wherein, The inner side of the third body portion is inclined to form a top edge. 如請求項1所述的包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置，其中， 該第二主體部由該第一主體部延伸而形成。A plasma processing apparatus including a focus ring with improved plasma processing squareness as recited in claim 1, wherein, The second body portion is formed by extending the first body portion. 如請求項1所述的包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置，其中， 該第二主體部與該第一主體部分開形成。A plasma processing apparatus including a focus ring with improved plasma processing squareness as recited in claim 1, wherein, The second body portion is formed separately from the first body portion. 一種包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置，其包括： 一腔室，其為利用電漿處理一基板的區域； 一卡盤，其位於該腔室，且在頂部安放有該基板； 一第一部分，其形成於該卡盤的內側，以安放該基板； 一第二部分，其以低於該第一部分的高度形成於該卡盤的外側；以及 一聚焦環，其覆蓋該第二部分，並以該第一部分的內側露出的方式覆蓋該第二部分的外側， 該聚焦環包括： 一第一主體部，其與該第二部分的頂面相接；以及 一第二主體部，其在該第一主體部的內側構成臺階狀構造而與該第一部分的頂面相接， 該第二主體部與該第一主體部分開形成， 構成該第二主體部的材料的相對介電常數高於構成該第一主體部的材料的相對介電常數。A plasma processing apparatus including a focus ring with improved plasma processing squareness, comprising: a chamber, which is an area for processing a substrate with plasma; a chuck located in the chamber with the substrate mounted on top; a first portion formed on the inner side of the chuck to accommodate the substrate; a second portion formed on the outside of the chuck at a lower height than the first portion; and a focus ring covering the second part and covering the outside of the second part in such a way that the inside of the first part is exposed, The focus ring includes: a first body portion connected to the top surface of the second portion; and a second main body part, which forms a stepped structure on the inner side of the first main body part and is in contact with the top surface of the first part, The second body portion is formed separately from the first body portion, The relative permittivity of the material constituting the second body portion is higher than the relative permittivity of the material constituting the first body portion. 如請求項6或請求項7所述的包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置，其中， 該第二主體部形成為覆蓋該第一主體部的頂部。A plasma processing apparatus including a focus ring with improved plasma processing verticality as claimed in claim 6 or claim 7, wherein, The second body portion is formed to cover the top of the first body portion. 如請求項8所述的包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置，其中， 該第二主體部形成為包圍該第一主體部。A plasma processing apparatus including a focus ring with improved plasma processing squareness as recited in claim 8, wherein, The second body portion is formed to surround the first body portion.
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