CN112447477A - Plasma processing apparatus including focus ring having improved plasma processing verticality - Google Patents
Plasma processing apparatus including focus ring having improved plasma processing verticality Download PDFInfo
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- CN112447477A CN112447477A CN202010570952.2A CN202010570952A CN112447477A CN 112447477 A CN112447477 A CN 112447477A CN 202010570952 A CN202010570952 A CN 202010570952A CN 112447477 A CN112447477 A CN 112447477A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
Abstract
The present invention relates to a plasma processing apparatus including a focus ring which improves the verticality of plasma processing, comprising: a chamber constituting a region for processing a substrate with plasma; a chuck located in the chamber so as to place the substrate thereon; a first portion formed inside the chuck in such a manner as to receive the substrate; a second portion formed at an outer side of the chuck at a lower height than the first portion; and a focus ring that covers the second portion and covers an outer side of the second portion so that an inner side of the first portion is exposed, the focus ring including: a first body portion that is in contact with an upper surface of the second portion; and a second body portion formed inside the first body portion in a stepped manner so as to be in contact with an upper surface of the first portion.
Description
Technical Field
The present invention relates to a plasma processing apparatus including a focus ring that improves the verticality of plasma processing.
Background
As illustrated in fig. 1, the plasma processing apparatus is an apparatus that processes a substrate 100 (e.g., etching, evaporation, etc.) using plasma.
Among the components of the plasma processing apparatus, the focus ring 400 is a main component of the plasma processing apparatus that prevents the chuck 300, on which the substrate 100 is mounted, from being plasma-processed.
In particular, the focus ring 400 is an essential component for the chuck 300 to which a bias power for inducing plasma toward the substrate 100 is applied.
At this time, the substance constituting the focus ring 400 may be a dielectric (e.g., SiO)2，Al2O3Etc.) or semiconductors (e.g., Si, etc.).
In the plasma processing apparatus including the focus ring 400, since the periphery between the substrate 100 including the outer side of the substrate 100 and the focus ring 400 is further influenced by the induced force (force) of the substrate 100 side, the plasma incident angle (plasma incident angle) is inclined toward the substrate 100 side in the process of processing the substrate 100 using plasma.
As described above, when the plasma incident angle is inclined, the outer side of the substrate 100 is processed by the plasma having the inclined incident angle, and the outer side of the substrate 100 processed by the plasma having the inclined incident angle has a problem that the plasma processing verticality (plasma processing verticality angle) is inclined (for example, a problem that etching is performed by inclining to the + side or the-side with reference to the vertical 0 degree; vertical indexes).
Such a problem leads to a decrease in the usable area of the substrate 100, and the larger the area of the substrate 100 is, the smaller the usable area is.
Disclosure of Invention
Technical problem
An object of the present invention is to provide a plasma processing apparatus including a focus ring that improves the verticality of plasma processing.
Technical scheme
A plasma processing apparatus including a focus ring that improves the verticality of plasma processing according to an embodiment of the present invention includes: a chamber constituting a region for processing a substrate with plasma; a chuck located in the chamber so as to place the substrate thereon; a first portion formed inside the chuck in such a manner as to receive the substrate; a second portion formed at an outer side of the chuck at a lower height than the first portion; and a focus ring that covers the second portion and covers an outer side of the second portion so that an inner side of the first portion is exposed, the focus ring including: a first body portion that is in contact with an upper surface of the second portion; and a second body portion formed inside the first body portion in a stepped manner so as to be in contact with an upper surface of the first portion.
According to an embodiment, the plasma processing apparatus of the focus ring for improving the verticality of plasma processing is characterized in that the first part includes: a dielectric in contact with a lower surface of the substrate; and an electrode line included in the dielectric, the electrode line extending so as to be located below the second body portion.
According to an embodiment, the plasma processing apparatus of the focus ring for improving the verticality of plasma processing includes: and a metal layer located under the second body portion and to which electrostatic force of the electrode line is applied so as to make the second body portion and the dielectric member closely adhere.
According to an embodiment, the plasma processing apparatus of the focus ring having improved verticality of plasma processing is characterized in that the metal layer is formed by one of evaporation, gold plating, and sputtering.
According to an embodiment, the plasma processing apparatus including a focus ring that improves plasma processing verticality includes: and a third body portion extending inside the second body portion to cover an outer side of the substrate in a stepped manner.
According to an embodiment, the plasma processing apparatus of the focus ring for improving the verticality of plasma processing is characterized in that the inner upper edge of the third body is formed obliquely.
According to an embodiment, the plasma processing apparatus of the focus ring for improving the verticality of plasma processing is characterized in that the second body portion is formed by extending the first body portion.
According to an embodiment, the plasma processing apparatus of the focus ring with improved verticality of plasma processing is characterized in that the second body portion is formed separately from the first body portion.
According to an embodiment, the plasma processing apparatus of the focus ring with improved verticality of plasma processing is characterized in that a Relative Permittivity (Relative Permittivity) of a substance constituting the second body portion is higher than a Relative Permittivity (Relative Permittivity) of a substance constituting the first body portion.
According to an embodiment, the plasma processing apparatus of the focus ring with improved verticality of plasma processing is characterized in that the second body is formed to cover an upper portion of the first body.
According to an embodiment, the plasma processing apparatus of the focus ring with improved verticality of plasma processing is characterized in that the second body portion is formed to surround the first body portion.
ADVANTAGEOUS EFFECTS OF INVENTION
The dielectric constant of the focus ring is changed in a stepwise manner in a process from the second body portion toward the first body portion, thereby having an effect of preventing the plasma processing from being inclined in a vertical direction.
Drawings
Fig. 1 is a diagram of a conventional plasma processing apparatus.
Fig. 2 is a diagram of a plasma processing apparatus including a focus ring that improves the verticality of plasma processing with respect to an embodiment of the present invention.
Fig. 3 is a perspective view and a sectional view of a focus ring according to an embodiment of the present invention.
Fig. 4 is a diagram relating to an embodiment different from fig. 2.
Fig. 5 is a diagram relating to an embodiment different from fig. 2.
Fig. 6 is a diagram relating to an embodiment different from fig. 2.
Fig. 7 is a diagram relating to an embodiment different from fig. 2.
Fig. 8 is a diagram relating to an embodiment different from fig. 2.
Reference numerals
100: substrate, 200: chamber, 300: chuck, 310: first portion, 311: dielectric, 312: electrode line, 320: second part, 400: focus ring, 410: first body portion, 420: second body portion, 421: metal layer, 430: a third body portion.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains can easily carry out the embodiments.
The invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
As illustrated in fig. 1, the plasma processing apparatus is an apparatus that processes a substrate 100 (e.g., etching, evaporation, etc.) using plasma.
Among the components of the plasma processing apparatus, the focus ring 400 is a main component of the plasma processing apparatus that prevents the chuck 300, on which the substrate 100 is mounted, from being plasma-processed.
In particular, the focus ring 400 is an essential component for the chuck 300 to which a bias power for inducing plasma toward the substrate 100 is applied.
At this time, the substance constituting the focus ring 400 may be a dielectric (e.g., SiO)2，Al2O3Etc.) or semiconductors (e.g., Si, etc.).
In the plasma processing apparatus including the focus ring 400, since the periphery between the substrate 100 including the outer side of the substrate 100 and the focus ring 400 is further influenced by the induced force (force) of the substrate 100 side, the plasma incident angle (plasma incident angle) is inclined toward the substrate 100 side in the process of processing the substrate 100 using plasma.
As described above, when the plasma incident angle is inclined, the outer side of the substrate 100 is processed by the plasma having the inclined incident angle, and the outer side of the substrate 100 processed by the plasma having the inclined incident angle has a problem that the plasma processing verticality (plasma processing verticality angle) is inclined (for example, a problem that etching is performed by inclining to the + side or the-side with reference to the vertical 0 degree; vertical indexes).
Such a problem leads to a decrease in the usable area of the substrate 100, and the larger the area of the substrate 100 is, the smaller the usable area is.
To solve such a problem, as illustrated in fig. 2, a plasma processing apparatus including a focus ring 400 that improves the verticality of plasma processing according to an embodiment of the present invention includes a chamber 200, a chuck 300, a first part 310, a second part 320, and a focus ring 400.
The chamber 200 is a region where the substrate 100 is processed using plasma.
The chuck 300 is located in the chamber 200 in such a manner as to mount the substrate 100 on the upper portion.
The first portion 310 is formed inside the chuck 300 to protrude upward in a diameter larger than the substrate 100 in such a manner as to receive the substrate 100.
The second portion 320 is formed at the outer side of the chuck 300 at a lower height than the first portion 310.
The focus ring 400 covers the second portion 320 and covers the outside of the first portion 310 in such a manner that the inside of the first portion 310 including the portion where the substrate 100 is seated is exposed.
As illustrated in fig. 2, a focus ring 400 of a plasma processing apparatus including a focus ring for improving a verticality of plasma processing according to an embodiment of the present invention includes a first body 410 and a second body 420.
The first body portion 410 is in contact with the upper surface of the second portion 320.
The second body portion 420 is formed to form a step inside the first body portion 410 and is in contact with the upper surface of the first portion 310.
As illustrated in fig. 4, the second body portion 420 may have a different length extending inward depending on the width of the substrate 100.
The height of the second body portion 420 is formed to be smaller than the height of the first body portion 410, and the dielectric constant is inversely proportional to the height, so that the dielectric constant of the second body portion 420 is formed to be higher than the dielectric constant of the first body portion 410.
That is, the dielectric constant changes in a stepwise manner as the second body portion 420 moves toward the first body portion 410.
Further, since the induced force (force to pull the plasma toward the chuck) is inversely proportional to the dielectric constant, the magnitude of the induced force of the second body portion 420 is changed between the substrate 100 and the first body portion 410 in a process from the substrate 100 toward the first body portion 410 to prevent the influence of the induced force of the substrate 100 side, with respect to a phenomenon in which the influence of the induced force of the substrate 100 side is more affected between the substrate 100 and the first body portion 410, thereby preventing the verticality of the plasma from being inclined.
In addition, during the process of processing the substrate 100 with plasma, the temperature of the focus ring 400 is increased by the plasma.
At this time, the medium gas, which transfers the temperature of the chuck 300 to the substrate 100, is also supplied to the lower portion of the second body part 420, thereby adjusting the rising temperature of the focus ring 400.
In addition, the second body part 420 meets the upper surface of the first part 310, thereby preventing the first part 310 from being plasma-treated.
In this way, the dielectric constant is changed in a stepwise manner from the second body portion 420 toward the first body portion 410, thereby having an effect of preventing the plasma processing from being inclined in the vertical direction.
In addition, since the medium gas for transferring the temperature of the chuck 300 is supplied to the lower portion of the second body part 420, there is an effect that the temperature of the focus ring 400 can be adjusted.
In addition, the second body part 420 is in contact with the upper surface of the first part 310, thereby having an effect of preventing the first part 310 from being plasma-treated.
As illustrated in fig. 2, a first portion 310 of a plasma processing apparatus including a focus ring that improves the verticality of plasma processing according to an embodiment of the present invention includes a dielectric 311 and electrode lines 312.
The dielectric 311 may be made of, for example, polyphenylimine (polyimide) or Al2O3AlN and Ceramics (Ceramics).
The dielectric 311 includes an electrode line 312.
The electrode lines 312 apply an electrostatic force (electrostatic force) to the substrate 100 to make the substrate 100 adhere to the dielectric 311.
The electrode line 312 extends so as to be located at a lower portion of the second body portion 420.
At this time, the width of the electrode line 312 may be formed wider than the width of the substrate 100.
As illustrated in fig. 3, the plasma processing apparatus including the focus ring that improves the verticality of plasma processing according to an embodiment of the present invention includes a metal layer 421.
The metal layer 421 is located at the lower portion of the second body portion 420, and an electrostatic force (electrostatic force) of the electrode line 312 is applied to the metal layer 421, so that the second body portion 420 is tightly attached to the dielectric 311 through the metal layer 421.
The metal layer 421 is formed by one of evaporation (Deposition), Plating (Plating), and Sputtering (Sputtering).
In this manner, the metal layer 421 is applied with an electrostatic force, thereby having an effect of preventing the focus ring 400 from being lifted.
As illustrated in fig. 5, the plasma processing apparatus including the focus ring, which improves the verticality of plasma processing, according to an embodiment of the present invention includes a third body 430.
The third body 430 extends inside the second body 420 to cover the outside of the substrate 100 in a stepped manner.
The height of the third body portion 430 is formed to be smaller than that of the second body portion 420.
The inner upper edge of the third body portion 430 is formed obliquely, so that a shadow area of the substrate 100, which is not processed but is blocked by the third body portion 430, can be reduced.
For reference, although the third body part 430 is not illustrated to be included in fig. 2, 3, 4, 6, 7, and 8, the third body part 430 may be included as needed.
In the plasma processing apparatus including the focus ring that improves the verticality of plasma processing according to an embodiment of the present invention, the second body part 420 may be formed by extending the first body part 410, as illustrated in fig. 2, or the second body part 420 may be formed separately from the first body part 410, as illustrated in fig. 6.
A specific example of the case where the second body portion 420 is formed separately from the first body portion 410 will be described later.
The Relative Permittivity (Relative Permittivity) of the material constituting the first and second body portions 420 may be higher than the Relative Permittivity (Relative Permittivity) of the material constituting the first body portion 410.
Thus, similarly to the above-described case where the dielectric constant is changed stepwise from the second body portion 420 toward the first body portion 410 by the height, the provision of the first body portion 410 and the second body portion 420 having different relative dielectric constants can prevent the verticality of the plasma processing from being inclined.
For reference, although it is illustrated in fig. 6 that the first and second body parts 410 and 420 are different in height, the relative dielectric constants of the first and second body parts 410 and 420 may be different as the first and second body parts 410 and 420 are the same in height or the second body part 420 is greater in height than the first body part 410.
Second, as illustrated in fig. 7, the second body part 420 may be formed to cover an upper portion of the first body part 410.
Third, as illustrated in fig. 8, the second body portion 420 may be formed to surround the first body portion 410.
The first, second and third embodiments can be implemented separately or in combination of two or more of them.
Although the present invention has been described in detail by way of preferred embodiments, the present invention is not limited thereto but can be variously embodied within the scope of the claims.
Claims (9)
1. A plasma processing apparatus including a focus ring that improves perpendicularity of plasma processing, comprising:
a chamber constituting a region for processing a substrate with plasma;
a chuck located in the chamber so as to place the substrate thereon;
a first portion formed inside the chuck in such a manner as to receive the substrate;
a second portion formed at an outer side of the chuck at a lower height than the first portion; and
a focus ring that covers the second portion and covers an outer side of the second portion so that an inner side of the first portion is exposed,
the focus ring includes:
a first body portion that is in contact with an upper surface of the second portion;
a second body portion formed in a stepped manner inside the first body portion so as to be in contact with an upper surface of the first portion;
a metal layer located at a lower portion of the second body portion,
the first portion includes:
a dielectric in contact with a lower surface of the substrate; and
an electrode line included in the dielectric,
the electrode wire extends so as to be located at a lower portion of the second body portion,
electrostatic force of the electrode wire is applied to the metal layer to cause the second body portion to abut the dielectric.
2. The plasma processing apparatus including the focus ring for improving the verticality of plasma processing according to claim 1,
the metal layer is formed by one of evaporation, gold plating and sputtering.
3. The plasma processing apparatus including the focus ring for improving the verticality of plasma processing according to claim 1, comprising:
and a third body portion extending inside the second body portion to cover an outer side of the substrate in a stepped manner.
4. The plasma processing apparatus including the focus ring for improving the verticality of plasma processing according to claim 3,
the inner upper edge of the third body portion is formed obliquely.
5. The plasma processing apparatus including the focus ring for improving the verticality of plasma processing according to claim 1,
the second body portion is formed by extending the first body portion.
6. The plasma processing apparatus including the focus ring for improving the verticality of plasma processing according to claim 1,
the second body portion is formed separately from the first body portion.
7. A plasma processing apparatus including a focus ring that improves perpendicularity of plasma processing, comprising:
a chamber constituting a region for processing a substrate with plasma;
a chuck located in the chamber so as to place the substrate thereon;
a first portion formed inside the chuck in such a manner as to receive the substrate;
a second portion formed at an outer side of the chuck at a lower height than the first portion; and
a focus ring that covers the second portion and covers an outer side of the second portion so that an inner side of the first portion is exposed,
the focus ring includes:
a first body portion that is in contact with an upper surface of the second portion; and
a second body portion formed in a stepped manner inside the first body portion so as to be in contact with an upper surface of the first portion,
the second body portion is formed separately from the first body portion,
the relative permittivity of the substance constituting the second main body portion is higher than the relative permittivity of the substance constituting the first main body portion.
8. The plasma processing apparatus including the focus ring for improving the verticality of plasma processing according to claim 6 or 7,
the second body portion is formed to cover an upper portion of the first body portion.
9. The plasma processing apparatus including the focus ring for improving the verticality of plasma processing according to claim 8,
the second body portion is formed to surround the first body portion.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20190106616 | 2019-08-29 | ||
| KR10-2019-0106616 | 2019-08-29 | ||
| KR10-2019-0113748 | 2019-09-16 | ||
| KR20190113748 | 2019-09-16 | ||
| KR1020190127675A KR102077974B1 (en) | 2019-08-29 | 2019-10-15 | Plasma treatment device including a focus ring with improved plasma treatment vertical angle |
| KR10-2019-0127675 | 2019-10-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112447477A true CN112447477A (en) | 2021-03-05 |
| CN112447477B CN112447477B (en) | 2021-09-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010570952.2A Active CN112447477B (en) | 2019-08-29 | 2020-06-19 | Plasma processing apparatus including focus ring having improved plasma processing verticality |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR102077974B1 (en) |
| CN (1) | CN112447477B (en) |
| TW (1) | TWI754325B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112670151A (en) * | 2019-10-15 | 2021-04-16 | 吉佳蓝科技股份有限公司 | Plasma processing device capable of improving verticality of plasma processing |
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| US20010003271A1 (en) * | 1999-12-10 | 2001-06-14 | Tokyo Electron Limited | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
| CN101150044A (en) * | 2006-09-19 | 2008-03-26 | 东京毅力科创株式会社 | Focus ring and plasma processing apparatus |
| CN101303963A (en) * | 2007-05-11 | 2008-11-12 | 中芯国际集成电路制造(上海)有限公司 | Method and apparatus for eliminating migration of etching pattern |
| CN102117726A (en) * | 2009-12-30 | 2011-07-06 | 塔工程有限公司 | Focusing ring of plasma processing apparatus and plasma processing apparatus equipped with focusing ring |
| KR20190046439A (en) * | 2017-10-26 | 2019-05-07 | 에이피티씨 주식회사 | Wafer chuck including heater pattern and method of fabricating the same |
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| KR20070048357A (en) * | 2005-11-04 | 2007-05-09 | 주성엔지니어링(주) | Electrostatic chuck for making uniform plasma |
| JP5035884B2 (en) * | 2007-03-27 | 2012-09-26 | 東京エレクトロン株式会社 | Thermal conductive sheet and substrate mounting apparatus using the same |
| CN107610999A (en) * | 2017-08-28 | 2018-01-19 | 北京北方华创微电子装备有限公司 | Bottom electrode mechanism and reaction chamber |
| JP6974088B2 (en) * | 2017-09-15 | 2021-12-01 | 東京エレクトロン株式会社 | Plasma processing equipment and plasma processing method |
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2019
- 2019-10-15 KR KR1020190127675A patent/KR102077974B1/en active IP Right Grant
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2020
- 2020-06-19 CN CN202010570952.2A patent/CN112447477B/en active Active
- 2020-07-17 TW TW109124243A patent/TWI754325B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010003271A1 (en) * | 1999-12-10 | 2001-06-14 | Tokyo Electron Limited | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
| CN101150044A (en) * | 2006-09-19 | 2008-03-26 | 东京毅力科创株式会社 | Focus ring and plasma processing apparatus |
| CN101303963A (en) * | 2007-05-11 | 2008-11-12 | 中芯国际集成电路制造(上海)有限公司 | Method and apparatus for eliminating migration of etching pattern |
| CN102117726A (en) * | 2009-12-30 | 2011-07-06 | 塔工程有限公司 | Focusing ring of plasma processing apparatus and plasma processing apparatus equipped with focusing ring |
| KR20190046439A (en) * | 2017-10-26 | 2019-05-07 | 에이피티씨 주식회사 | Wafer chuck including heater pattern and method of fabricating the same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112670151A (en) * | 2019-10-15 | 2021-04-16 | 吉佳蓝科技股份有限公司 | Plasma processing device capable of improving verticality of plasma processing |
| CN112670151B (en) * | 2019-10-15 | 2022-07-08 | 吉佳蓝科技股份有限公司 | Plasma processing device capable of improving verticality of plasma processing |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202123299A (en) | 2021-06-16 |
| TWI754325B (en) | 2022-02-01 |
| KR102077974B1 (en) | 2020-02-14 |
| CN112447477B (en) | 2021-09-24 |
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