TWI780090B - 靜電吸座的新式修復方法 - Google Patents

靜電吸座的新式修復方法 Download PDF

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TWI780090B
TWI780090B TW106143521A TW106143521A TWI780090B TW I780090 B TWI780090 B TW I780090B TW 106143521 A TW106143521 A TW 106143521A TW 106143521 A TW106143521 A TW 106143521A TW I780090 B TWI780090 B TW I780090B
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dielectric material
layer
electrostatic chuck
electrostatic
plasma
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TW106143521A
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TW201833347A (zh
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溫德爾格倫 博德二世
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美商應用材料股份有限公司
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Abstract

本揭示內容的實施例與翻新燒結或電漿噴塗的靜電吸座之方法有關。起初，將使用過之靜電吸座主體的一部分移除，以暴露基部表面。接著，使用懸浮漿料電漿噴塗製程，將新的介電材料層沉積至基部表面上。懸浮漿料電漿噴塗製程可將奈米尺寸的介電材料之懸浮漿料霧化成為滴粒流，且接著所述滴粒流被注入電漿放電內，以形成部分地熔融之液滴。將部分地熔融之液滴投射在基部表面上，以在基部表面上形成介電材料層。隨後，選擇性地移除所述新的介電材料層之材料，以形成台面。在清潔後，經翻新的靜電吸座已準備好恢復使用。

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靜電吸座的新式修復方法
本揭示內容之實施例一般係與翻新之靜電吸座及用於翻新燒結(sinter)靜電吸座的方法有關。
靜電吸座用於半導體裝置製造中。藉由使基板靜電夾置於吸座，靜電吸座可使基板在處理期間保持在靜電吸座上的固定位置中。
靜電吸座一般具有嵌埋在介電材料中之電極。靜電吸座的最上方表面具有複數個台面(mesa) (即，凸部)，其中基板將於處理期間座落在這些台面上。隨著時間過去，台面可能磨耗，且靜電吸座將失效。靜電吸座的電氣特性會因介電材料中的裂痕而受波及，或者介電材料可因導致介電材料分解之化學或電漿侵襲而損壞。當台面磨耗，基板具有更多的接觸，導致影響基板內之均勻性的溫度波動。靜電吸座的溫度也補償了這點，並增加其溫度。來自磨耗之台面的另一個影響是背側氣體冷卻無法到達基板下方，因而也影響了基板內之均勻性。這種不均勻性會導致產量損失，並可能改變裝置的效能。靜電吸座因此不再有用，且通常被丟棄或翻新。避免購買新的靜電吸座是有益的。
化學和製程副產物會改變介電性能，從而增加或減少夾持力，並導致基板破裂或晶圓操作問題。標準的翻新製程(refurbishment process)可移除餘留的台面及5至50微米的介電材料，並再造台面。這使得介電材料變薄，因此只允許完成幾次。當介電材料變得太薄，可能會發生高電壓擊穿。
燒結靜電吸座被用來減少介電材料，並降低夾持基板所需的夾持電壓。因為與當前製程相關的孔隙度問題，習用的電漿噴塗無法用於修復。
為了免去購置新的燒結靜電吸座之花費，可進行翻新製程來藉由以下步驟翻新靜電吸座：移除期望厚度的介電材料(包括形成於介電材料上的台面)，隨後進行珠擊和遮蔽製程，以在介電材料中形成台面。然而，採用這種方法會因為介電材料在數個製程循環後變薄，使得可進行的翻新製程的次數受限。
因此，本案所屬技術領域中有需要翻新靜電吸座以修復介電材料中之裂縫之改良的方法。
本揭示內容的實施例與翻新燒結或電漿噴塗的靜電吸座之方法有關。在一個實施例中，揭示了用於翻新靜電吸座的方法。所述方法包含以下步驟：移除靜電吸座主體的第一部分，以暴露靜電吸座主體的第二部分，其中該第一部分具有在靜電吸座主體的頂表面下方之第一深度，且該第二部分具有在靜電吸座主體的頂表面下方之第二深度；使用懸浮漿料電漿噴塗製程(suspension slurry plasma spray process)將介電材料層沉積至該第二部分上；以及選擇性地自介電材料層移除材料，以建立新的頂表面。懸浮漿料電漿噴塗製程可包括以下步驟：產生電漿放電；將介電材料之懸浮漿料霧化(atomizing)成為滴粒(droplet)流，其中懸浮漿料包含介電材料之奈米尺寸的固態粒子散佈至液態或半液態載體物質(carrier substance)內；將滴粒流注入電漿放電內，以形成部分地熔融之液滴(drop)；以及藉由將部分地熔融之液滴投射在靜電吸座主體之該第二部分上，而將介電材料層形成在該暴露的第二部分上。
在另一實施例中，所述方法包括以下步驟：(a) 移除靜電吸座主體的一部分，以暴露靜電吸座主體的基部表面；(b) 使用懸浮漿料電漿噴塗製程將介電材料層沉積至基部表面上，該懸浮漿料電漿噴塗製程包含：產生電漿放電；將介電材料之懸浮漿料霧化成為滴粒流，該懸浮漿料包含介電材料之奈米尺寸的固態粒子散佈至液態或半液態載體物質內；直接將滴粒流注入電漿放電內，以形成部分地熔融之液滴；以及藉由以電漿放電使部分地熔融之液滴朝向靜電吸座主體的基部表面加速，而將介電材料層形成在基部表面上；以及(c) 粗糙化介電材料層；以及(d) 選擇性地自介電材料層移除材料，以建立新的頂表面。
在又一實施例中，提供了藉由以上實施例中所描述之方法翻新之經翻新的靜電吸座。
本揭示內容的實施例一般與翻新燒結或電漿噴塗的靜電吸座之方法有關。起初，從使用過的靜電吸座移除預定量之介電材料(如，AlO)，留下基部表面。接著，藉由使用介電材料之奈米粉末的懸浮漿料電漿噴塗，以介電材料沉積基部表面。接著藉由遮蔽和珠擊將新的介電層的一部分移除，以形成新的台面。在移除遮罩後，將台面的邊緣修平，且經翻新的靜電吸座可在清潔後準備好恢復使用。
可根據本文所討論的實施例而被翻新之合適的燒結(sinter)或電漿噴塗靜電吸座可包括Coulomb或Johnson-Rahbek靜電吸座，所述Coulomb及Johnson-Rahbek靜電吸座可自加州聖大克勞拉市的應用材料公司購得。應了解，本文所討論的實施例可同樣適用於其它類型的靜電吸座，包括那些從不同製造商購得的靜電吸座。
第8圖描繪根據本揭示內容的實施例之用於翻新使用過的靜電吸座之翻新製程800的流程圖。參照第1A至1B圖和第2至7圖以說明性地描述第8圖，第2至7圖繪示使用過的靜電吸座在根據第8圖之流程圖的翻新製程之不同階段期間的剖面視圖。翻新製程始於方塊802，從使用過的靜電吸座移除預定量的介電材料，留下基部表面。
第1A圖為使用過的Coulomb或Johnson-Rahbek類型的燒結或電漿噴塗的靜電吸座100在翻新之前的示意頂視圖。第1B圖為第1A圖之使用過的靜電吸座100的剖面視圖。如第1B圖所示，靜電吸座100具有吸座主體108，吸座主體108包括頂表面112及底表面114。頂表面112包括複數個台面102自靜電吸座100的吸座主體108延伸。台面102可包含與吸座主體108相同的材料。在一個實施例中，吸座主體108由介電材料構成，介電材料可如氧化鋁、氮化鋁，或具有優異的耐熱性或耐腐蝕性之合適的陶瓷材料。若期望的話，吸座主體108可具有一或多個介電層，所述一或多個介電層形成為用於支撐基板的統一結構(unified structure)。術語「層(layer)」包括連續地形成之層的情況和不連續地形成之層的情況。
在第1A及1B圖所示的實施例中，吸座主體108為單一氧化鋁燒結體。可藉由以下步驟形成氧化鋁燒結體：提供在有機溶劑中含有氧化鋁作為主要原料的混合物，以提供漿料，並使所述漿料乾燥，以提供製備的粉末。藉由熱壓來壓緊或燒製所製備的粉末，以提供緻密的氧化鋁燒結體。在一個示範性實施例中，可由含有95 wt%或更多(如，99 wt%或更多)的氧化鋁作為主要成分之組合物形成吸座主體108。為了提供適用於Johnson-Rahbek靜電吸座的體積電阻率、適用於Coulomb靜電吸座的體積電阻率，或介於其間的體積電阻率，吸座主體108可含有其它元素，如氧化釔、鈦或稀土元素。儘管本揭示內容特別討論氧化鋁，但應了解到，本揭示內容的翻新方法也適用於包含其它介電材料的靜電吸座。
氣體持留環104可視情況形成在頂表面112上。氣體持留環104可從頂表面112延伸，並圍繞台面102所設置之區域。台面102與氣體持留環104二者皆可包含與吸座主體108相同的介電材料。在吸座主體108內嵌埋有電極106，電極106可經由桿部110耦接至電源，而桿部110耦接至靜電吸座100的底表面114。
如第1B圖所示，因處理期間之化學或電漿侵襲的緣故，某些台面102被磨耗且在吸座主體108上方具有不同的高度。因此，設置在靜電吸座100上的任何基板可能無法被實質平坦地固持，從而使設置在靜電吸座100上的基板無法被均勻地夾持和處理。
為了翻新靜電吸座100，需要決定欲移除的材料量。介於電極106與台面102或氣體持留環104(若使用的話)的最高點之間的距離(如箭頭「B」所示)，是藉由測量靜電吸座100的電容來決定。在移除材料後，期望在電極106上方留下預定的材料量(如箭頭「D」所示)，以避免電極106之意外暴露。因此，可藉由自距離「B」減去距離「D」來決定待移除的材料量(如箭頭「C」所示)。在某些示範實施例中，待移除的材料量之厚度(指的是從吸座主體108的頂表面112起算)為約10微米至約50微米。
一旦決定了待移除的材料量，可處理靜電吸座100，以移除台面102、氣體持留環104及吸座主體108之材料的一部分，而留下基部表面202，如第2圖所示，其為電極106上方的距離「D」。從電極106起算，距離「D」可介於約20微米至約50微米之間。可藉由研磨或拋光來移除材料，或可藉由適於移除材料的任何其它技術來移除材料。
於方塊804，可使用懸浮漿料電漿噴塗製程(suspension slurry plasma spray process)將新的介電材料302沉積於基部表面202上，如第3圖所示。新的介電材料302可具有約20微米至約60微米的厚度。可取決於應用而考慮較厚或較薄的介電材料302。新的介電材料302應具有與用來形成吸座主體108之原始介電材料相同或實質上一致的電阻率。可使用的合適介電材料包括氧化鋁、氮化鋁，或陶瓷材料。在多種實施例中，新的介電材料302和吸座主體是由相同材料所製成。在一個示範性實施例中，新的介電材料302為氧化鋁。一旦選擇了供Johnson-Rahbek靜電吸座所用之適當材料，可使用懸浮漿料電漿噴塗製程將新的介電材料302塗佈至基部表面202上。
本文所描述的懸浮漿料電漿噴塗製程能夠在基部表面202上產生材料沉積物，以形成保護性塗層或接近淨形(net shape)的主體，或產生給定材料的粉末。可以懸浮漿料的形式將材料供應至電漿放電，所述懸浮漿料包含小的奈米尺寸固態粒子或粉末散佈在溶劑或其它液態或半液態載體物質(carrier substance)內。可以電感或電容方式形成電漿放電。奈米尺寸的固態粒子或粉末可具有約1微米至約10奈米的直徑。在需要氧化鋁的情況下，材料可為具有奈米尺寸粒子的氧化鋁粉末。可藉由霧化探針(atomizing probe)將懸浮液帶入或注入電漿放電內。霧化探針可使用加壓氣體剪切懸浮液，從而將其霧化成細小液滴流。
當懸浮液之細小滴粒流抵達電漿放電器時，溶劑首先蒸發，且由此形成的蒸汽在電漿的極熱下分解。殘餘的小固態粒子的氣溶膠(aerosol)接著聚結成完全熔融或部分熔融的液滴。電漿放電可使熔融的液滴加速，因而聚積動能。由此動能攜帶，熔融的液滴被電漿放電夾帶並投射到基底表面202上，熔融的液滴在基底表面202上固化，形成介電材料層，所述介電材料層具有約20微米至約60微米的厚度。或者，熔融的液滴可以在飛行中固化，並收集到容器中以產生該材料的粉末。
懸浮漿料電漿噴塗製程具有將介電材料的孔隙度去除的能力。已觀察到介電材料302的孔隙度可被降低到1%或以下。孔隙度對於阻止薄介電質上的高電壓損壞是關鍵的。過去的電漿噴塗必須退火或在壓力下壓縮，以達到靜電吸座所需的低孔隙度。藉由使用懸浮漿料電漿噴塗之本改良後翻新製程，可以更有效地去除氧化鋁的孔隙度，這意味著現在可施行電漿噴塗，而不需要退火或在壓力下壓縮。
懸浮漿料電漿噴塗製程比習用的電漿噴塗技術更具優勢，因為懸浮漿料電漿噴塗製程可藉由將包含小的奈米尺寸固態粒子或粉末的懸浮漿料霧化成細小液滴的流，並將此細小液滴流直接注入電漿，來除去製備昂貴粉末所涉及的眾多複雜且耗時的步驟。因此，滴粒可在單一步驟中，於飛行中乾燥、煆燒(calcin)並熔融。反之，習用的電漿噴塗需要藉由載氣方式將粉末注入電漿射流中。最重要的是，即使在多個循環的翻新製程後，介電質厚度總是相同。
於方塊806，可將新的介電材料302粗糙化成介於約2微吋與約10微吋之間的表面粗糙度，而產生如第4圖所示之經粗糙化的表面402。可藉由在最小力道下之珠擊(bead blasting)或任何合適的拋光技術來將新的介電材料302粗糙化。
於方塊808，在形成經粗糙化的表面402之後，可形成台面及氣體持留環(視情況)。為了形成台面及氣體持留環，可選擇性地移除新的介電材料302的某些部分。為了選擇性地移除新的介電材料302的某些部分，可將遮罩502安置於新的介電材料302上方，如第5圖所示。在形成台面604及氣體持留環602的製程期間，可視需要形成氣體溝槽、隆起及其它幾何形貌。遮罩502具有開口504，開口504係對應於將形成台面與氣體持留環的位置之相鄰區域。接著可透過穿過遮罩502而形成的開口504，對暴露之新的介電材料302進行珠擊。如第6圖所示，可移除遮罩502，以留下新形成的台面604和氣體持留環602。
台面604及氣體持留環602可能具有銳利邊緣或毛邊，而可能在處理期間刮傷基板的背部，並產生非期望之顆粒。因此，可在最小的力道下，以軟性拋光墊對台面604和氣體持留環602進行拋光，以修圓銳利的角部、移除毛邊，並留下如第7圖所示之完成的台面704與持留環702。因此，經翻新的靜電吸座700可再次進行操作。
經翻新的靜電吸座700包含其中嵌有電極106之原始吸座主體108與配置在吸座主體108上方之新的介電材料302，新的介電材料302具有頂表面，而頂表面具有複數個台面704在遠離原始吸座主體108之方向上延伸。因此，經翻新的靜電吸座700具有相異的部分，即是，原始的吸座主體108和新的介電材料302。原始的吸座主體108與新的介電材料302二者可包含相同的材料，如氧化鋁。
本文所描述的實施例揭示了使用電漿噴塗伴隨著懸浮漿料中之奈米粉末的改良的翻新製程。包含小的奈米尺寸粉末或固態粒子的懸浮漿料經霧化成細小滴粒流，並在沒有載氣的情況下直接注入電漿內。於單一步驟中，滴粒在飛行中乾燥、煆燒(calcin)並熔融。滴粒聚結，以形成部分熔融或完全熔融的介電材料之液滴。接著可將介電材料之熔融的液滴沉積在暴露的靜電吸座主體上，以形成硬而緻密的介電材料沉積物。
不同於習用的翻新製程(因用作靜電吸座主體之介電材料的厚度為固定，習用的翻新製程之介電材料移除和幾何塑造(如，台面)的次數受到限制)，本文所討論的翻新製程藉由擴展翻新的次數來增加靜電吸座的壽命。特別是，可視需要多次重覆方塊802至808 (或上述的任何特定方塊)的翻新製程，而不會受限於介電材料的物理厚度(physical thickness)。因為可使用懸浮漿料電漿噴塗製程反覆地以新的介電材料取代磨耗的材料，靜電吸座可被翻新的次數遠多於習用的翻新製程。即使在多個循環的翻新製程後，介電質沉積厚度總是相同。已觀察到此揭示內容的翻新製程能將電介材料中的孔隙度降低到1%以下，從而避免薄介電質上的高電壓損壞。藉由翻新靜電吸座，不需要購買全新的靜電吸座。經翻新的靜電吸座比新的靜電吸座節省成本，但仍具有基本上相同的電阻率，且作用與新的靜電吸座實質相同。
儘管前文涉及所揭示之裝置、方法及系統的實施例，可在不悖離本揭示內容的基本範疇之情況下推知所揭示之裝置、方法及系統的其它和進一步實施例，且本揭示內容之範疇由隨附申請專利範圍所決定。
100‧‧‧靜電吸座102‧‧‧台面104‧‧‧氣體持留環106‧‧‧電極108‧‧‧吸座主體110‧‧‧桿部112‧‧‧頂表面114‧‧‧底表面202‧‧‧基部表面302‧‧‧(新的)介電材料402‧‧‧(經粗糙化的)表面502‧‧‧遮罩504‧‧‧開口602‧‧‧氣體持留環604‧‧‧台面700‧‧‧(經翻新的)靜電吸座702‧‧‧持留環704‧‧‧台面800‧‧‧翻新製程802~808‧‧‧方塊
為可詳細瞭解本揭示內容之上述特徵，如上簡述之本揭示內容之更具體說明係可參閱上述實施例而得知，其中部分實施例係說明於如附圖式中。然而，應注意如附圖式係僅說明本揭示內容之一般實施例，且因此不應被視為限制發明範疇之用，因為本揭示內容可允許其他等效實施例。
第1A圖為使用過的Johnson-Rahbek類型靜電吸座在翻新之前的示意頂視圖。
第1B圖為第1A圖之使用過的靜電吸座之剖面視圖。
第2至7圖為第1A及1B圖之靜電吸座在根據本揭示內容之實施例的翻新之多個不同階段處的剖面視圖。
第8圖繪示根據本揭示內容之實施例的用於翻新使用過的靜電吸座之翻新製程的流程圖。
為幫助瞭解，在圖式中係已盡可能地使用了相同的元件符號來代表圖式中相同的元件。圖式沒有按比例繪製，並且為了清楚起見可以被簡化。可以預期的是，一個實施例的元素和特徵可以有益地併入其他實施例中而不需要進一步的敘述。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
800‧‧‧翻新製程
802~808‧‧‧方塊

Claims (18)

  1. 一種用於翻新靜電吸座的方法，包含以下步驟：移除一靜電吸座主體的一第一部分，以暴露該靜電吸座主體的一第二部分，其中該第一部分具有在該靜電吸座主體的一頂表面下方之一第一深度，且該第二部分具有在該靜電吸座主體的該頂表面下方之一第二深度；使用一懸浮漿料電漿噴塗製程(suspension slurry plasma spray process)將一介電材料層沉積至該第二部分上，該懸浮漿料電漿噴塗製程包含：產生一電漿放電；將一介電材料之一懸浮漿料霧化(atomizing)成為一滴粒(droplet)流，該懸浮漿料包含該介電材料之奈米尺寸的固態粒子，該介電材料之該等奈米尺寸的固態粒子散佈至一液態或半液態載體物質(carrier substance)內；將該滴粒流注入該電漿放電內，以形成部分地熔融之液滴；以及藉由將該部分地熔融之液滴投射在該靜電吸座主體之該第二部分上，而將一介電材料層形成在該暴露的第二部分上； 將沉積在該第二部分上之該介電材料層粗糙化；以及選擇性地自該介電材料層移除材料，以建立一新的頂表面。
  2. 如請求項1所述之方法，其中經粗糙化之該介電材料層具有介於約2微吋與約10微吋之間的一表面粗糙度。
  3. 如請求項1所述之方法，其中該介電材料層具有約20微米至約60微米之一厚度。
  4. 如請求項1所述之方法，其中該介電材料之該等奈米尺寸的固態粒子具有約1微米至約10奈米之一直徑。
  5. 如請求項1所述之方法，其中移除一靜電吸座主體的一第一部分包含以下步驟：將形成在該靜電吸座主體的該頂表面上之複數個台面(mesa)移除。
  6. 如請求項1所述之方法，其中選擇性地自該介電材料層移除材料，以建立一新的頂表面包含以下步驟：於該介電材料層上方形成一遮罩；以及珠擊經由該遮罩所暴露之該介電材料層，以形成台面。
  7. 如請求項6所述之方法，進一步包含以下步驟：拋光該新的頂表面，其中拋光該新的頂表面包含以下步驟：從該等台面移除毛邊。
  8. 如請求項1所述之方法，其中該介電材料層包含氧化鋁。
  9. 如請求項1所述之方法，其中該介電材料層包含氮化鋁。
  10. 如請求項1所述之方法，其中在不使用載氣的情況下將該滴粒流注入該電漿放電內。
  11. 一種用於翻新一靜電吸座的方法，包含以下步驟：移除一靜電吸座主體的一部分，以暴露該靜電吸座主體的一基部表面；使用一懸浮漿料電漿噴塗製程(suspension slurry plasma spray process)將一介電材料層沉積至該基部表面上，該懸浮漿料電漿噴塗製程包含：產生一電漿放電；將一介電材料之一懸浮漿料霧化成為一滴粒(droplet)流，該懸浮漿料包含該介電材料之奈米尺寸的固態粒子，該介電材料之該等奈米尺寸的固態粒子散佈至一液態或半液態載體物質(carrier substance)內； 直接將該滴粒流注入該電漿放電內，以形成部分地熔融之液滴；以及藉由以該電漿放電使該部分地熔融之液滴朝向該靜電吸座主體的該基部表面加速，而將一介電材料層形成在該基部表面上；將沉積在該第二部分上之該介電材料層粗糙化；以及選擇性地自該介電材料層移除材料以形成台面(mesa)，並拋光該上表面以建立一新的頂表面。
  12. 如請求項11所述之方法，進一步包含以下步驟：重複以下步驟：移除一靜電吸座主體的一部分，以暴露該靜電吸座主體的一基部表面；使用一懸浮漿料電漿噴塗製程將一介電材料層沉積至該基部表面上；粗糙化該介電材料層；以及選擇性地自該介電材料層移除材料。
  13. 如請求項11所述之方法，其中經粗糙化之該介電材料層具有介於約2微吋與約10微吋之間的一表面粗糙度。
  14. 如請求項11所述之方法，其中該介電材料層具有約20微米至約60微米之一厚度。
  15. 如請求項11所述之方法，其中該介電材料 之該等奈米尺寸的固態粒子具有約1微米至約10奈米之一直徑。
  16. 如請求項11所述之方法，其中該介電材料層包含氧化鋁或氮化鋁。
  17. 如請求項11所述之方法，其中在不使用載氣的情況下將該滴粒流注入該電漿放電內。
  18. 如請求項11所述之方法，其中選擇性地自該介電材料層移除材料包含以下步驟：於該介電材料層上方形成一遮罩；以及珠擊經由該遮罩所暴露之該介電材料層，以形成該台面。
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