CN110036467B - 用于静电吸盘的新式修复方法 - Google Patents

用于静电吸盘的新式修复方法 Download PDF

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CN110036467B
CN110036467B CN201780075413.8A CN201780075413A CN110036467B CN 110036467 B CN110036467 B CN 110036467B CN 201780075413 A CN201780075413 A CN 201780075413A CN 110036467 B CN110036467 B CN 110036467B
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dielectric material
electrostatic chuck
layer
chuck body
droplets
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CN110036467A (zh
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小温德尔·G·博伊德
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Applied Materials Inc
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Applied Materials Inc
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  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)

Abstract

本公开内容的实施方式涉及整修烧结或等离子体喷涂的静电吸盘的方法。起初，将使用过的静电吸盘主体的一部分移除，以暴露底表面。接着，使用悬浮浆料等离子体喷涂工艺，将新的介电材料层沉积至底表面上。悬浮浆料等离子体喷涂工艺可将纳米尺寸的介电材料的悬浮浆料雾化成为小滴流，并且接着所述小滴流被注入等离子体放射内，以形成部分地熔融的滴。将部分地熔融的滴投射在底表面上，以在底表面上形成介电材料层。随后，选择性地移除新的介电材料层的材料，以形成台面。在清洁后，经整修的静电吸盘已准备好恢复使用。

Description

用于静电吸盘的新式修复方法
背景
技术领域
本公开内容的实施方式大致涉及整修的静电吸盘和用于整修烧结(sinter)静电吸盘的方法。
背景技术
静电吸盘在半导体装置制造中是有用的。通过将基板静电夹持于吸盘，静电吸盘可使基板在处理期间保持在静电吸盘上的固定位置中。
静电吸盘一般具有嵌入在介电材料中的电极。静电吸盘的最上方表面具有多个台面(mesa)(即，凸出部分(projection))，其中基板将于处理期间处于在这些台面上。随着时间过去，台面可能磨损，并且静电吸盘将不再如此有效。静电吸盘的电气特性会因介电材料中的裂缝(crack)而受到损害，或者介电材料可因导致介电材料分解(breakdown)的化学或等离子体侵袭而损坏。当台面磨损，基板具有更多的接触，导致影响基板内的均匀性的温度波动。静电吸盘的温度也补偿了这点，并增加基板的温度。来自磨损的台面的另一个影响是背侧气体冷却无法到达基板下方，因而也影响基板内的均匀性。这种不均匀性导致产量损失，并可能改变装置的性能。静电吸盘因此不再有用，并且通常被丢弃或整修。避免购买新的静电吸盘的花费是有益的。
化学和工艺副产物会改变介电性质，从而增加或减少吸附力，并导致基板破裂或晶片转运问题。标准的整修工艺(refurbishment process)是移除余留的台面和5至50微米的介电材料，并再造台面。这使得介电材料变薄，因此只允许完成几次。当介电材料变得太薄，可能会发生高电压穿通(punch through)。
使用烧结静电吸盘来减少介电材料，并降低吸附基板所需的吸附电压。因为与当前的工艺相关的孔隙度问题，常规的等离子体喷涂无法用于修复。
为了免去购置新的烧结静电吸盘的花费，可进行整修工艺来通过以下步骤整修静电吸盘：移除期望厚度的介电材料(包括形成于介电材料上的台面)，随后进行喷砂和遮蔽工艺，以在介电材料中形成台面。然而，采用这种方法，因为介电材料在数个工艺循环后变得更薄，使得可进行的整修工艺的次数受限。
因此，本领域中需要整修静电吸盘以修复介电材料中的裂缝的改善的方法。
发明内容
本公开内容的实施方式涉及整修烧结或等离子体喷涂的静电吸盘的方法。在一个实施方式中，公开了用于整修静电吸盘的方法。所述方法包含以下步骤：移除静电吸盘主体的第一部分，以暴露静电吸盘主体的第二部分，其中所述第一部分具有在静电吸盘主体的顶表面下方的第一深度，所述第二部分具有在静电吸盘主体的顶表面下方的第二深度；使用悬浮浆料等离子体喷涂工艺(suspension slurry plasma spray process)将介电材料层沉积至所述第二部分上；和选择性地从介电材料层移除材料，以建立新的顶表面。悬浮浆料等离子体喷涂工艺可包括以下步骤：产生等离子体放射(discharge)；将介电材料的悬浮浆料雾化(atomizing)成为小滴(droplet)流，其中悬浮浆料包含介电材料的纳米尺寸的固态粒子，所述固态粒子分散至液态或半液态载体物质(carrier substance)内；将小滴流注入等离子体放射内，以形成部分地熔融的滴(drop)；和通过将部分地熔融的滴投射在静电吸盘主体的所述第二部分上，而将介电材料层形成在暴露的第二部分上。
在另一实施方式中，所述方法包括以下步骤：(a)移除静电吸盘主体的一部分，以暴露静电吸盘主体的底表面；(b)使用悬浮浆料等离子体喷涂工艺将介电材料层沉积至底表面上，所述悬浮浆料等离子体喷涂工艺包含：产生等离子体放射；将介电材料的悬浮浆料雾化成为小滴流，所述悬浮浆料包含介电材料的纳米尺寸的固态粒子，所述固态粒子分散至液态或半液态载体物质内；直接将小滴流注入等离子体放射内，以形成部分地熔融的滴；和通过以等离子体放射使部分地熔融的滴朝向静电吸盘主体的底表面加速，而将介电材料层形成在底表面上；和(c)使介电材料层粗糙化；和(d)选择性地从介电材料层移除材料，以建立新的顶表面。
在又一实施方式中，提供了通过以上实施方式中描述的方法整修的经整修的静电吸盘。
附图说明
为可详细理解本公开内容的上述特征，可通过参考实施方式获得如上简述的本公开内容的更具体说明，在附图中图示一些实施方式。然而，应注意附图仅图示本公开内容的典型实施方式，因此不应被视为限制发明的范围，因为本公开内容可允许其他等效实施方式。
图1A是使用过的约翰逊-拉贝克型静电吸盘(Johnson-Rahbek typeelectrostatic chuck)在整修之前的示意性俯视图。
图1B是图1A的使用过的静电吸盘的横截面图。
图2至图7是图1A和图1B图的静电吸盘在根据本公开内容的实施方式的整修的各个阶段的横截面图。
图8图示根据本公开内容的实施方式的用于整修使用过的静电吸盘的整修工艺的流程图。
为帮助了解，在图中已尽可能使用相同的参考数字代表图中相同的元件。没有按比例绘图，并且为了清楚起见可以简化图。可以预期的是，一个实施方式的元素和特征可以有益地并入其他实施方式中而不需要进一步的叙述。
具体实施方式
本公开内容的实施方式大致涉及整修烧结或等离子体喷涂的静电吸盘的方法。起初，从使用过的静电吸盘移除预定量的介电材料(如，AlO)，留下底表面。接着，通过使用介电材料的纳米粉末的悬浮浆料等离子体喷涂，以介电材料沉积底表面。接着通过遮蔽和喷砂将新的介电层的一部分移除，以形成新的台面。在移除掩模后，将台面的边缘修平，并且经整修的静电吸盘可在清洁后准备好恢复使用。
可根据本文所讨论的实施方式而整修的合适的烧结(sinter)或等离子体喷涂静电吸盘可包括库伦(Coulomb)或约翰逊-拉贝克(Johnson-Rahbek)静电吸盘，所述库伦或约翰逊-拉贝克静电吸盘可从加利福尼亚州圣克拉拉市的应用材料公司购得。应理解，本文所讨论的实施方式可同样适用于其它类型的静电吸盘，包括那些从其他制造商购得的静电吸盘。
图8描绘根据本公开内容的实施方式的用于整修使用过的静电吸盘的整修工艺800的流程图。参照图1A至图1B和图2至图7说明性地描述图8，图2至图7示出使用过的静电吸盘在根据图8的流程图的整修工艺的各个阶段期间的横截面图。整修工艺始于方框802，从使用过的静电吸盘移除预定量的介电材料，留下底表面。
图1A是使用过的库伦或约翰逊-拉贝克型的烧结或等离子体喷涂的静电吸盘100在整修之前的示意性俯视图。图1B是图1A的使用过的静电吸盘100的横截面图。如图1B所示，静电吸盘100具有吸盘主体108，吸盘主体108包括顶表面112和底表面114。顶表面112包括多个台面102，所述台面102从静电吸盘100的吸盘主体108延伸。台面102可包含与吸盘主体108相同的材料。在一个实施方式中，吸盘主体108由介电材料构成，介电材料诸如氧化铝、氮化铝，或具有优异的耐热性或耐腐蚀性的合适的陶瓷材料。如有需要，吸盘主体108可具有一个或多个介电层，所述一个或多个介电层形成为用于支撑基板的统一结构(unifiedstructure)。术语“层(layer)”包括连续地形成层的情况和不连续地形成层的情况。
在图1A和图1B所示的实施方式中，吸盘主体108为单一氧化铝烧结体。可通过以下步骤形成氧化铝烧结体：提供在有机溶剂中含有氧化铝作为主要原料的混合物，以提供浆料，并使所述浆料干燥，以提供制备的粉末。通过热压来压紧或烧制所制备的粉末，以提供致密的氧化铝烧结体。在一个示范性实施方式中，可由含有95质量百分比或更多(如，99质量百分比或更多)的氧化铝作为主要成分的组合物形成吸盘主体108。为了提供适用于约翰逊-拉贝克静电吸盘的体积电阻率、适用于库伦静电吸盘的体积电阻率，或介于约翰逊-拉贝克静电吸盘与库伦静电吸盘之间的体积电阻率，吸盘主体108可含有其它元素，如氧化钇、钛或稀土元素。尽管本公开内容特别讨论氧化铝，但应理解，本公开内容的整修方法也适用于包含其它介电材料的静电吸盘。
气体阻挡环104可以可选地形成在顶表面112上。气体阻挡环104可从顶表面112延伸，并围绕设置有台面102的区域。台面102与气体阻挡环104二者皆可包含与吸盘主体108相同的介电材料。在吸盘主体108内嵌入有电极106，电极106可经由杆部110耦接至电源，而杆部110耦接至静电吸盘100的底表面114。
如图1B所示，由于处理期间的化学或等离子体侵袭，某些台面102被磨损并且在吸盘主体108上方具有不同的高度。因此，设置在静电吸盘100上的任何基板可能无法被大体上平坦地保持，从而使设置在静电吸盘100上的基板无法被均匀地吸附和处理。
为了整修静电吸盘100，需要确定待移除的材料量。介于电极106与台面102或气体阻挡环104(如有使用)的最高点之间的距离(如箭头“B”所示)，是通过测量静电吸盘100的电容(capacitance)来确定的。在移除材料后，期望在电极106上方留下预定量的材料(如箭头“D”所示)，以避免电极106的意外暴露。因此，可通过从距离“B”减去距离“D”来确定待移除的材料量(如箭头“C”所示)。在某些示范实施方式中，待移除的材料量的厚度(从吸盘主体108的顶表面112测量)为约10微米至约50微米。
一旦确定待移除的材料量，就处理静电吸盘100，以移除台面102、气体阻挡环104和一部分的吸盘主体108的材料，而留下底表面202，如图2所示，底表面202处于电极106上方的距离“D”。从电极106起算，距离“D”可介于约20微米至约50微米之间。可通过研磨或抛光来移除材料，或可通过适于移除材料的任何其它技术来移除材料。
在方框804处，使用悬浮浆料等离子体喷涂工艺(suspension slurry plasmaspray process)将新的介电材料302沉积于底表面202上，如图3所示。新的介电材料302可具有约20微米至约60微米的厚度。根据应用，考虑较厚或较薄的介电材料302。新的介电材料302应具有与形成吸盘主体108的原始介电材料相同或大体上一致的电阻率。可使用的合适介电材料包括氧化铝、氮化铝或陶瓷材料。在各种实施方式中，新的介电材料302和吸盘主体由相同材料制成。在一个示范性实施方式中，新的介电材料302为氧化铝。一旦选择了用于约翰逊-拉贝克静电吸盘的适当材料，使用悬浮浆料等离子体喷涂工艺将新的介电材料302涂布至底表面202上。
本文所描述的悬浮浆料等离子体喷涂工艺能够在底表面202上产生材料沉积物，以形成保护性涂层或接近净形(net shape)主体，或产生给定材料的粉末。可以悬浮浆料的形式将材料供应至等离子体放射，所述悬浮浆料包含小的纳米尺寸固态颗粒或粉末，所述固态颗粒或粉末分散在溶剂或其它液态或半液态载体物质(carrier substance)内。可用电感或电容方式形成等离子体放射。纳米尺寸的固态颗粒或粉末可具有约1微米至约10纳米的直径。在需要氧化铝的情况下，材料是具有纳米尺寸颗粒的氧化铝粉末。可通过雾化探针(atomizing probe)将悬浮液带入或注入等离子体放射内。雾化探针可使用加压气体剪切(shear)悬浮液，从而将悬浮液雾化成细小小滴流。
当悬浮液的细小小滴流到达等离子体放射器(discharger)时，溶剂首先蒸发，并且由此形成的蒸汽在等离子体的极热下分解。残余的小固态颗粒的气溶胶(aerosol)接着聚结成完全熔融或部分熔融的滴。等离子体放射可使熔融的滴加速，因而聚积动能。由此动能携带，熔融的滴被等离子体放射夹带并投射到底表面202上，熔融的滴在底表面202上固化，形成介电材料层，所述介电材料层具有约20微米至约60微米的厚度。或者，熔融的滴可以在飞行中固化，并被收集到容器中以产生所述材料的粉末。
悬浮浆料等离子体喷涂工艺具有去除介电材料的多孔性的能力。已观察到介电材料302的孔隙度能够降低到1％或更低。孔隙度对于阻止薄电介质上的高电压损坏是关键的。过去的等离子体喷涂必须退火或在压力下压缩，以达到静电吸盘所需的低孔隙度。通过使用悬浮浆料等离子体喷涂的这种改善的整修工艺，可以更有效地去除氧化铝的多孔性，这意味着现在可在不退火或在压力下压缩的情况下施行等离子体喷涂。
悬浮浆料等离子体喷涂工艺比常规的等离子体喷涂技术更具优势，因为悬浮浆料等离子体喷涂工艺通过将包含小的纳米尺寸固态颗粒或粉末的悬浮浆料雾化成细小小滴的流(此细小小滴的流要直接注入等离子体)，来除去制备昂贵粉末所涉及的众多复杂且耗时的步骤。因此，小滴在单一步骤中，干燥于飞行中、煅烧(calcin)并熔融。反之，常规的等离子体喷涂需要通过载气方式将粉末注入等离子体射流中。最重要的是，即使在整修工艺的多个循环之后，电介质厚度总是相同的。
在方框806处，使新的介电材料302粗糙化至表面粗糙度介于约2微英寸与约10微英寸之间，而产生如图4所示的经粗糙化的表面402。可通过用最小力的喷砂(beadblasting)或任何合适的抛光技术来使新的介电材料302粗糙化。
在方框808处，在形成经粗糙化的表面402之后，形成台面和气体阻挡环(可选的)。为了形成台面和气体阻挡环，选择性地移除新的介电材料302的部分。为了选择性地移除新的介电材料302的部分，将掩模502放置于新的介电材料302上方，如图5所示。在形成台面604和气体阻挡环602的工艺期间，可视需要形成气体槽、凸起和其它几何形状。掩模502具有开口504，开口504对应于将形成台面和气体阻挡环的位置的相邻区域。接着可通过穿过掩模502而形成的开口504，对暴露的新的介电材料302进行喷砂。如图6所示，移除掩模502，以留下新形成的台面604和气体阻挡环602。
台面604和气体阻挡环602可具有锐利边缘或毛边，而可能在处理期间刮伤基板的背部，并产生不期望的颗粒。因此，可用最小的力，以柔软抛光垫对台面604和气体阻挡环602进行抛光，以修圆锐利的角部、移除毛边，并留下如图7所示的修整的台面704与阻挡环702。因此，经整修的静电吸盘700可再次准备好进行操作。
经整修的静电吸盘700包含嵌入有电极106的原始吸盘主体108和设置在吸盘主体108上方的新的介电材料302，新的介电材料302具有顶表面，而顶表面具有多个台面704，多个台面704在远离原始吸盘主体108的方向上延伸。因此，经整修的静电吸盘700具有不同的部分，即原始的吸盘主体108和新的介电材料302。原始的吸盘主体108与新的介电材料302二者可包含相同的材料，如氧化铝。
本文所描述的实施方式公开了使用等离子体喷涂的改善的整修工艺，所述整修工艺使用悬浮浆料中的纳米粉末。包含小的纳米尺寸粉末或固态颗粒的悬浮浆料被雾化成细小小滴流，并在没有载气的情况下直接注入等离子体内。在单一步骤中，小滴在飞行中干燥、煅烧(calcin)并熔融。小滴聚结，以形成部分熔融或完全熔融的介电材料的滴。接着可将介电材料的熔融的滴沉积在暴露的静电吸盘主体上，以形成硬而致密的介电材料沉积物。
不同于常规的整修工艺(在常规的整修工艺中，因为用于静电吸盘主体的介电材料的厚度是固定的，介电材料移除和几何创建(如，台面)的次数受到限制)，本文所讨论的整修工艺通过扩展整修的次数来增加静电吸盘的寿命。特别地，可视需要多次重复方框802至方框808(或上述的任何特定方框)的整修工艺，而不受限于介电材料的物理厚度(physical thickness)。因为可使用悬浮浆料等离子体喷涂工艺反复地以新的介电材料取代磨损的材料，静电吸盘可被整修的次数远多于常规的整修工艺。即使在整修工艺的多个循环后，电介质沉积厚度总是相同。已观察到本公开内容的整修工艺能将介电材料中的孔隙度降低到低于1％，从而避免薄电介质上的高电压击穿。通过整修静电吸盘，不需要购买全新的静电吸盘。经整修的静电吸盘比新的静电吸盘节省成本，但仍具有基本上相同的电阻率，并且作用与新的静电吸盘大体上相同。
尽管前文针对所公开的装置、方法和系统的实施方式，可在不悖离本公开内容的基本范围的情况下设计所公开的装置、方法和系统的其它和进一步的实施方式，并且本公开内容的范围由随附的权利要求书确定。

Claims (14)

1.一种用于整修静电吸盘的方法，包含以下步骤：
移除静电吸盘主体的第一部分，以暴露所述静电吸盘主体的第二部分，其中所述第一部分具有在所述静电吸盘主体的顶表面下方的第一深度，并且所述第二部分具有在所述静电吸盘主体的所述顶表面下方的第二深度；
使用悬浮浆料等离子体喷涂工艺(suspension slurry plasma spray
process)将介电材料层沉积至所述第二部分上，所述悬浮浆料等离子体喷涂工艺包含：
产生等离子体放射；
将介电材料的悬浮浆料雾化(atomizing)成为小滴(droplet)流，所述悬浮浆料包含所述介电材料的纳米尺寸的固态颗粒，所述介电材料的所述纳米尺寸的固态颗粒分散至液态或半液态载体物质(carrier substance)内；
在不使用载气的情况下，将所述小滴流注入所述等离子体放射内，以形成部分地熔融的滴；和
通过将所述部分地熔融的滴投射在所述静电吸盘主体的所述第二部分上，而将介电材料层形成在所述暴露的第二部分上；
使沉积在所述第二部分上的所述介电材料层粗糙化；和
选择性地从所述介电材料层移除材料，以建立新的顶表面。
2.如权利要求1所述的方法，其中经粗糙化的介电材料具有介于2微英寸与10微英寸之间的表面粗糙度。
3.如权利要求1所述的方法，其中所述介电材料具有20微米至60微米的厚度。
4.如权利要求1所述的方法，其中所述介电材料的所述纳米尺寸的固态颗粒具有1微米至10纳米的直径。
5.如权利要求1所述的方法，其中移除静电吸盘主体的第一部分包含以下步骤：将形成在所述静电吸盘主体的所述顶表面上的多个台面(mesa)移除。
6.如权利要求1所述的方法，其中选择性地从所述介电材料层移除材料，以建立新的顶表面包含以下步骤：
在所述介电材料层上方形成掩模；和
喷砂处理通过所述掩模暴露的所述介电材料层，以形成台面。
7.如权利要求6所述的方法，进一步包含以下步骤：抛光所述新的顶表面，其中抛光所述新的顶表面包含以下步骤：从所述台面移除毛边。
8.如权利要求1所述的方法，其中所述介电材料层包含氧化铝或氮化铝。
9.一种经整修的静电吸盘，所述经整修的静电吸盘通过如权利要求1所述的方法整修。
10.一种用于整修静电吸盘的方法，包含以下步骤：
移除静电吸盘主体的部分，以暴露所述静电吸盘主体的底表面；
使用悬浮浆料等离子体喷涂工艺将介电材料层沉积至所述底表面上，所述悬浮浆料等离子体喷涂工艺包含：
产生等离子体放射；
将介电材料的悬浮浆料雾化成为小滴(droplet)流，所述悬浮浆料包含所述介电材料的纳米尺寸的固态颗粒，所述介电材料的所述纳米尺寸的固态颗粒分散至液态或半液态载体物质(carrier substance)内；
在不使用载气的情况下，直接将所述小滴流注入所述等离子体放射内，以形成部分地熔融的滴；和
通过以所述等离子体放射使所述部分地熔融的滴朝向所述静电吸盘主体的所述底表面加速，而将介电材料层形成在所述底表面上；和
使所述介电材料层粗糙化；和
选择性地从所述介电材料层移除材料，以建立新的顶表面。
11.如权利要求10所述的方法，进一步包含以下步骤：
重复以下步骤：移除静电吸盘主体的部分，以暴露所述静电吸盘主体的底表面；使用悬浮浆料等离子体喷涂工艺将介电材料层沉积至所述底表面上；使所述介电材料层粗糙化；和选择性地从所述介电材料层移除材料，以建立新的顶表面。
12.如权利要求10所述的方法，其中经粗糙化的介电材料具有介于2微英寸与10微英寸之间的表面粗糙度。
13.如权利要求10所述的方法，其中所述介电材料层包含氧化铝或氮化铝。
14.如权利要求10所述的方法，其中选择性地从所述介电材料层移除材料，以建立新的顶表面包含以下步骤：
在所述介电材料层上方形成掩模；和
喷砂处理通过所述掩模暴露的所述介电材料层，以形成台面。
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