TWI775749B - 多站沉積系統中之膜厚度匹配用可變循環與時間射頻活化方法 - Google Patents
多站沉積系統中之膜厚度匹配用可變循環與時間射頻活化方法 Download PDFInfo
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- TWI775749B TWI775749B TW106113839A TW106113839A TWI775749B TW I775749 B TWI775749 B TW I775749B TW 106113839 A TW106113839 A TW 106113839A TW 106113839 A TW106113839 A TW 106113839A TW I775749 B TWI775749 B TW I775749B
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01J37/32—Gas-filled discharge tubes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01—ELECTRIC ELEMENTS
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/143,338 US20170314129A1 (en) | 2016-04-29 | 2016-04-29 | Variable cycle and time rf activation method for film thickness matching in a multi-station deposition system |
US15/143,338 | 2016-04-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201802885A TW201802885A (zh) | 2018-01-16 |
TWI775749B true TWI775749B (zh) | 2022-09-01 |
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Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
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TW106113839A TWI775749B (zh) | 2016-04-29 | 2017-04-26 | 多站沉積系統中之膜厚度匹配用可變循環與時間射頻活化方法 |
TW111130779A TWI817655B (zh) | 2016-04-29 | 2017-04-26 | 多站沉積系統中之膜厚度匹配用可變循環與時間射頻活化方法 |
TW112134025A TW202401522A (zh) | 2016-04-29 | 2017-04-26 | 多站沉積系統中之膜厚度匹配用可變循環與時間射頻活化方法 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
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TW111130779A TWI817655B (zh) | 2016-04-29 | 2017-04-26 | 多站沉積系統中之膜厚度匹配用可變循環與時間射頻活化方法 |
TW112134025A TW202401522A (zh) | 2016-04-29 | 2017-04-26 | 多站沉積系統中之膜厚度匹配用可變循環與時間射頻活化方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20170314129A1 (ko) |
JP (3) | JP6908426B2 (ko) |
KR (4) | KR102302800B1 (ko) |
CN (3) | CN107419238A (ko) |
SG (1) | SG10201703133PA (ko) |
TW (3) | TWI775749B (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9797042B2 (en) | 2014-05-15 | 2017-10-24 | Lam Research Corporation | Single ALD cycle thickness control in multi-station substrate deposition systems |
KR102323248B1 (ko) * | 2015-03-25 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
US10697059B2 (en) | 2017-09-15 | 2020-06-30 | Lam Research Corporation | Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching |
SG11202109959TA (en) * | 2019-03-12 | 2021-10-28 | Lam Res Corp | Multi-station semiconductor processing with independently adjustable pedestals |
KR20220018591A (ko) * | 2019-06-07 | 2022-02-15 | 램 리써치 코포레이션 | 멀티 스테이션 반도체 프로세싱에서 독립적으로 조정 가능한 플로우 경로 컨덕턴스 |
US20230032481A1 (en) * | 2020-01-03 | 2023-02-02 | Lam Research Corporation | Station-to-station control of backside bow compensation deposition |
US11449026B2 (en) | 2020-05-27 | 2022-09-20 | Applied Materials, Inc. | Variable loop control feature |
KR102437091B1 (ko) * | 2020-08-14 | 2022-08-26 | 한국기계연구원 | 플라즈마 화학기상증착 공정의 실시간 제어 방법 및 플라즈마 화학기상증착용 반응 챔버 |
CN118077041A (zh) * | 2021-10-07 | 2024-05-24 | 朗姆研究公司 | 多站处理室部件的选择性控制 |
CN115418629B (zh) * | 2022-08-17 | 2024-01-12 | 杭州富芯半导体有限公司 | 薄膜沉积的方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US6042652A (en) * | 1999-05-01 | 2000-03-28 | P.K. Ltd | Atomic layer deposition apparatus for depositing atomic layer on multiple substrates |
US20020100418A1 (en) * | 2000-05-12 | 2002-08-01 | Gurtej Sandhu | Versatile atomic layer deposition apparatus |
US20060166501A1 (en) * | 2005-01-26 | 2006-07-27 | Tokyo Electron Limited | Method and apparatus for monolayer deposition |
TWI277139B (en) * | 2001-02-12 | 2007-03-21 | Asm Inc | Improved process for deposition of semiconductor filme |
US8940646B1 (en) * | 2013-07-12 | 2015-01-27 | Lam Research Corporation | Sequential precursor dosing in an ALD multi-station/batch reactor |
TW201608612A (zh) * | 2014-05-15 | 2016-03-01 | 蘭姆研究公司 | 多站基板沉積系統中之單一原子層沉積循環厚度控制 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2978974B2 (ja) * | 1996-02-01 | 1999-11-15 | キヤノン販売株式会社 | プラズマ処理装置 |
JP2003049278A (ja) * | 2001-08-06 | 2003-02-21 | Canon Inc | 真空処理方法及び真空処理装置 |
JP2004068091A (ja) * | 2002-08-07 | 2004-03-04 | Matsushita Electric Ind Co Ltd | 成膜処理装置および成膜処理方法 |
DE602004026889D1 (de) * | 2003-09-19 | 2010-06-10 | Akzo Nobel Nv | Metallisierung von substrat(en) durch ein flüssigkeit/ - dampfabscheidungsverfahren |
JP5023004B2 (ja) * | 2008-06-30 | 2012-09-12 | 株式会社日立国際電気 | 基板処理方法及び基板処理装置 |
DE102010016471A1 (de) * | 2010-04-16 | 2011-10-20 | Aixtron Ag | Vorrichtung und Verfahren zum gleichzeitigen Abscheiden mehrerer Halbleiterschichten in mehreren Prozesskammern |
KR101395243B1 (ko) * | 2011-04-29 | 2014-05-15 | 세메스 주식회사 | 기판처리장치 및 방법 |
KR20140037198A (ko) * | 2011-06-09 | 2014-03-26 | 싱귤러스 엠오씨브이디 게엠바하 아이. 지알. | 인라인 화학 기상 증착을 위한 방법 및 시스템 |
JP5878813B2 (ja) * | 2011-06-21 | 2016-03-08 | 東京エレクトロン株式会社 | バッチ式処理装置 |
JP6257437B2 (ja) * | 2014-04-25 | 2018-01-10 | 株式会社トクヤマ | 結晶成長装置 |
US20160056032A1 (en) * | 2014-08-22 | 2016-02-25 | Lam Research Corporation | Methods and apparatuses for stable deposition rate control in low temperature ald systems by showerhead active heating and/or pedestal cooling |
JP6578158B2 (ja) * | 2015-08-28 | 2019-09-18 | 株式会社ニューフレアテクノロジー | 気相成長装置及び気相成長方法 |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US6042652A (en) * | 1999-05-01 | 2000-03-28 | P.K. Ltd | Atomic layer deposition apparatus for depositing atomic layer on multiple substrates |
US20020100418A1 (en) * | 2000-05-12 | 2002-08-01 | Gurtej Sandhu | Versatile atomic layer deposition apparatus |
TWI277139B (en) * | 2001-02-12 | 2007-03-21 | Asm Inc | Improved process for deposition of semiconductor filme |
US20060166501A1 (en) * | 2005-01-26 | 2006-07-27 | Tokyo Electron Limited | Method and apparatus for monolayer deposition |
US8940646B1 (en) * | 2013-07-12 | 2015-01-27 | Lam Research Corporation | Sequential precursor dosing in an ALD multi-station/batch reactor |
TW201608612A (zh) * | 2014-05-15 | 2016-03-01 | 蘭姆研究公司 | 多站基板沉積系統中之單一原子層沉積循環厚度控制 |
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TWI817655B (zh) | 2023-10-01 |
KR20210113585A (ko) | 2021-09-16 |
JP7282130B2 (ja) | 2023-05-26 |
TW202401522A (zh) | 2024-01-01 |
KR20230169037A (ko) | 2023-12-15 |
KR102610664B1 (ko) | 2023-12-05 |
CN116083881A (zh) | 2023-05-09 |
JP2023103367A (ja) | 2023-07-26 |
CN116083880A (zh) | 2023-05-09 |
TW201802885A (zh) | 2018-01-16 |
US20170314129A1 (en) | 2017-11-02 |
JP2021158386A (ja) | 2021-10-07 |
KR20230027133A (ko) | 2023-02-27 |
US20220154336A1 (en) | 2022-05-19 |
JP6908426B2 (ja) | 2021-07-28 |
TW202314806A (zh) | 2023-04-01 |
KR102502272B1 (ko) | 2023-02-20 |
KR102302800B1 (ko) | 2021-09-15 |
SG10201703133PA (en) | 2017-11-29 |
KR20170124074A (ko) | 2017-11-09 |
JP2017199904A (ja) | 2017-11-02 |
CN107419238A (zh) | 2017-12-01 |
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