TWI765834B - Light-emitting diode wafer inspection method - Google Patents

Abstract

A light-emitting diode wafer inspection method, comprising: providing a light-emitting diode wafer, the light-emitting diode wafer comprising: a wafer substrate; a plurality of light-emitting diode dies; at least one auxiliary electrode; providing power to the light-emitting diode dies; and optically inspecting the light source generated by the light-emitting diode dies. The light-emitting diode wafer inspection method of the present invention can be applied to the manufacturing process of displays.

Description

Light Emitting Diode Wafer Inspection Method

The present invention relates to a method for detecting a light-emitting diode wafer, in particular to a method for detecting a light-emitting diode wafer for a light-emitting diode wafer including an auxiliary electrode.

In the prior art, a plurality of light-emitting diode chips can be fabricated on one wafer, but the plurality of light-emitting diode chips must be cut from the wafer before optical detection can be performed, which not only causes the light-emitting diode chips The difficulty in optical detection also reduces the detection efficiency of LED wafers.

The technical problem to be solved by the present invention is to provide a light-emitting diode wafer detection method aiming at the deficiencies of the prior art.

In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a method for detecting a light-emitting diode wafer, which includes: providing a light-emitting diode wafer, and the light-emitting diode wafer includes: a a wafer base; a plurality of light-emitting diode chips, which are arranged on the wafer base, Wherein, each light-emitting diode chip includes: a first electrode, which is disposed on the wafer substrate; a main body structure, which is disposed on the first electrode; and a second electrode, which is disposed on the wafer substrate. disposed on the main body structure; and at least one auxiliary electrode, which is electrically connected to the first electrodes of the light-emitting diode chips and not electrically connected to the second electrodes of the light-emitting diode chips; In these light-emitting diode chips, the plurality of main structures are spaced apart from each other; the plurality of second electrodes are spaced apart from each other; and each of the first electrodes is at least partially not disposed on the main body structure and the second electrode. covered by two electrodes; providing power to the light-emitting diode chips; and optically detecting the light sources generated by the light-emitting diode chips.

The above-mentioned LED wafer inspection method, wherein, in the LED chips, a plurality of first electrodes can be spaced apart from each other, and the first electrodes of each LED chip are not disposed An auxiliary electrode can be respectively provided on the main structure and the part covered by the second electrode.

The above-mentioned LED wafer inspection method, wherein, in the LED chips, the first electrodes can be connected to each other to form a first electrode layer, and the LED wafer can only contain an auxiliary electrode.

In the above light-emitting diode wafer inspection method, the auxiliary electrode is disposed between two light-emitting diode wafers.

The above LED wafer inspection method, wherein the LED wafer includes a main body region and a peripheral region, the main body structure and the second electrical The electrode is disposed in the main body region; the first electrode layer extends from the main body region to the peripheral region; and the auxiliary electrode is disposed on a portion of the first electrode layer located in the peripheral region.

In the above-mentioned LED wafer inspection method, the upper surfaces of the second electrodes and the auxiliary electrode(s) are located on a plane parallel to the wafer substrate.

In the above-mentioned LED wafer inspection method, the LED chips are supplied with power by using a conductive probe module.

In the above-mentioned LED wafer inspection method, the conductive probe module comprises: a substrate; a plurality of first conductive probes extending downward from the lower surface of the substrate, and the first conductive probes The positions of the probes correspond to the second electrodes respectively; and at least one second conductive probe extends downward from the lower surface of the substrate, and the positions of the or the second conductive probes correspond to the or these auxiliary electrodes.

In the above light-emitting diode wafer inspection method, the optical inspection at least includes light emission inspection, luminance inspection and color coordinate inspection.

One of the beneficial effects of the present invention is that in the light-emitting diode wafer detection method provided by the present invention, at least one auxiliary electrode can be provided in the provided light-emitting diode wafer, so that the light-emitting diode of the present invention can emit light. The diode wafer inspection method can apply a voltage between the second electrode and the auxiliary electrode to provide power to the light-emitting diode wafers, thereby optically inspecting the light-emitting diode wafers without requiring the light-emitting diode wafers to be inspected. The polar body wafer is first cut from the light emitting diode wafer, which can greatly improve the detection efficiency.

To further understand the features and technical content of the present invention, please refer to the following detailed descriptions and drawings related to the present invention, but the drawings provided are only for reference and description, not for limiting the present invention.

10: Light Emitting Diode Wafer

10a: Light Emitting Diode Wafer

10b: Light Emitting Diode Wafer

11: Wafer substrate

11a: Wafer substrate

11b: Wafer substrate

12: LED chip

12a: LED chip

12b: LED chip

121: The first electrode

121a: first electrode

121b: first electrode

122: Main structure

122a: Main Structure

122b: Main Structure

123: Second electrode

123a: second electrode

123b: second electrode

124a: first electrode layer

124b: first electrode layer

13: Auxiliary electrode

13a: auxiliary electrode

13b: auxiliary electrode

20: Conductive probe module

20a: Conductive probe module

21: Substrate

21a: Substrate

22: The first conductive probe

22a: first conductive probe

23: Second Conductive Probe

23a: Second conductive probe

31: Main area

33: Peripheral area

S101: Steps

S102: Steps

S103: Steps

[FIG. 1] is a flowchart of a method for inspecting a light-emitting diode wafer according to Embodiment 1 of the present invention.

[ FIG. 2 ] is a schematic cross-sectional view of the light-emitting diode wafer provided in the light-emitting diode wafer detection method according to Embodiment 1 of the present invention.

[FIG. 3] is a schematic cross-sectional view of the LED wafer provided in the LED wafer detection method according to Embodiment 1 of the present invention and the conductive probe module for detection.

[ FIG. 4 ] is a schematic cross-sectional view of a light-emitting diode wafer provided in the light-emitting diode wafer detection method according to Embodiment 2 of the present invention.

5 is a schematic cross-sectional view of the LED wafer provided in the LED wafer detection method according to Embodiment 2 of the present invention and the conductive probe module for detection.

6 is a schematic top view of a light-emitting diode wafer provided in a method for detecting a light-emitting diode wafer according to Embodiment 3 of the present invention.

The following describes the implementation of the present invention through specific embodiments, and those skilled in the art can understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied by other different specific embodiments, and the details in this specification can also be based on For different viewpoints and applications, various modifications and changes can be made without departing from the spirit of the present invention. In addition, the term "or", as used herein, should include any one or a combination of more of the associated listed items, as the case may be.

Example 1

As shown in FIG. 1 , the method for detecting a light-emitting diode wafer according to Embodiment 1 of the present invention includes: step S101 : providing a light-emitting diode wafer, and the light-emitting diode wafer includes: a wafer substrate; a plurality of light-emitting diode chips; at least one auxiliary electrode; step S102 : providing power to the light-emitting diode chips; and step S103 : performing optical detection on the light sources generated by the light-emitting diode chips.

Specifically, as shown in FIG. 2 , the LED wafer 10 provided in the LED wafer detection method of Embodiment 1 includes: a wafer substrate 11 ; a plurality of LED chips 12 , It is disposed on the wafer base 11, wherein each light-emitting diode chip 12 includes: a first electrode 121 disposed on the wafer base 11; a main structure 122 disposed on the On the first electrode 121 ; and a second electrode 123 , which is disposed on the main body structure 122 ; and at least one auxiliary electrode 13 , which is electrically connected to the first electrodes 121 of the light-emitting diode chips 12 sexual connection.

More specifically, as shown in FIG. 2 , in the light-emitting diode wafer 10 provided in the light-emitting diode wafer inspection method of Embodiment 1, the plurality of main structures 122 are spaced apart from each other; The two electrodes 123 are spaced apart from each other; and each of the first electrodes 121 is at least partially not covered by the main body structure 122 and the second electrode 12 disposed thereon.

In particular, as shown in FIG. 2 , in the LED wafer 10 provided in the LED wafer inspection method of Embodiment 1, the plurality of first electrodes 121 are spaced apart from each other, and each light The parts of the first electrode 121 of the diode wafer 12 not covered by the main structure 122 and the second electrode 123 disposed thereon are provided with an auxiliary electrode 13 respectively.

For example, the first electrodes 121 can be derived from a single first electrode layer, and in the process of the light emitting diode wafer, the single first electrode layer is divided into a plurality of spaced apart by etching technology The first electrode 121 .

As described above, the light-emitting diode wafer detection method of the first embodiment is provided by disposing at least one auxiliary electrode 13 in the provided light-emitting diode wafer 10 so that the second electrode 123 and the auxiliary electrode 13 can pass through. A voltage is applied between the two to provide power to the LED chips 12 , thereby optically inspecting the LED chips 10 without removing the LED chips 12 from the LED chips 10 first. It can be cut from the top to greatly improve the detection efficiency.

In a preferred embodiment, the upper surfaces of the second electrodes and the auxiliary electrode(s) are located on a plane parallel to the wafer substrate, so that the second electrodes and the auxiliary electrode(s) are It is easy to conduct through a plurality of conductive probes whose lower ends are located on the same plane, but the present invention is not limited to this.

In a preferred embodiment, the optical detection at least includes luminescence detection (detecting whether the light-emitting diode chip generates a light source), brightness detection (detecting the brightness of the light source generated by the light-emitting diode chip), and color coordinate detection (detecting distribution of the light source generated by the light-emitting diode wafer on the chromaticity coordinate diagram), but the present invention is not limited thereto.

In a specific embodiment, in the light-emitting diode wafer inspection method of Example 1, the light-emitting diode wafers 12 can be powered by using a conductive probe module 20, but the present invention is not limited to this.

For example, as shown in FIG. 3 , the conductive probe module 20 may include: a substrate 21 ; a plurality of first conductive probes 22 extending downward from the lower surface of the substrate 21 , and the first conductive probes 22 The positions of a conductive probe 22 correspond to the second electrodes 123 respectively; and at least one second conductive probe 23 , which extends downward from the lower surface of the substrate 21 , and the positions of the or the second conductive probes 23 correspond to the or the auxiliary electrodes 13 respectively.

Specifically, the conductive probe module 20 shown in FIG. 3 includes: a plurality of second conductive probes 23, and the positions of the second conductive probes 23 correspond to the auxiliary electrodes 13 respectively, but the present invention does not Not limited to this, in another embodiment, the conductive probe module may include only one second conductive probe, and the second conductive probe corresponds to a single auxiliary electrode.

The conductive probe module 20 shown in FIG. 3 can more efficiently apply voltage between the plurality of second electrodes and the plurality of auxiliary electrodes, so as to improve the detection efficiency.

Example 2

The LED wafer inspection method of Embodiment 2 is substantially the same as that of Embodiment 1, and the difference is only in the structure of the provided LED wafer.

As shown in FIG. 4 , as in Embodiment 1, the LED wafer 10a provided in the LED wafer inspection method of Embodiment 2 includes: a wafer base 11a; a plurality of LEDs The chip 12a is disposed on the wafer base 11a, wherein each light-emitting diode chip 12a includes: a first electrode 121a disposed on the wafer base 11a; a main structure 122a, which is are disposed on the first electrode 121a; a second electrode 123a is disposed on the main body structure 122a; and at least one auxiliary electrode 13a is connected to the first electrode of the light-emitting diode chips 12a The electrodes 121a are electrically connected.

In particular, as shown in FIG. 4, in the LED wafer 10a provided in the LED wafer inspection method of Embodiment 2, the first electrodes 121a are connected to each other to form a first electrode layer 124a, and the LED wafer 10a includes only one auxiliary electrode 13a. In addition, the auxiliary electrode 13a is disposed between the two light-emitting diode wafers 12a.

Compared with Embodiment 1, the LED wafer 10a provided in the LED wafer inspection method of Embodiment 2 includes only one auxiliary electrode 13a, and the first electrodes 121a are connected to each other to form a The first electrode layer 124a, whereby a voltage can be applied between the plurality of second electrodes 123a and the single auxiliary electrode 13a to provide power to the light-emitting diode chips 12a, thereby providing power to the light-emitting diode wafers The optical inspection performed by 10a can reduce the number of auxiliary electrodes 13a required to be disposed, thereby simplifying the manufacturing process of the light emitting diode wafer 10a, and thereby improving the inspection efficiency.

In a specific embodiment, in the LED wafer inspection method of Example 2, the LED chips 12a can be powered by using a conductive probe module 20a, but the present invention is not limited to this.

For example, as shown in FIG. 5, the conductive probe module 20a may include: a substrate 21a; a plurality of first conductive probes 22a extending downward from the lower surface of the substrate 21a, and the first conductive probes 22a The positions of a conductive probe 22a correspond to the second electrodes 123a respectively; and at least one second conductive probe 23a extends downward from the lower surface of the substrate 21a, and the or the second conductive probes The positions of 23a correspond to the or the auxiliary electrodes 13a, respectively.

Specifically, the conductive probe module 20a shown in FIG. 5 includes a single second conductive probe 23a, and the position of the second conductive probe 23a corresponds to the single auxiliary electrode 13a.

The conductive probe module 20a shown in FIG. 5 can more efficiently apply voltage between the plurality of second electrodes and the single auxiliary electrode, so as to improve the detection efficiency.

Example 3

The LED wafer inspection method of Embodiment 3 is substantially the same as that of Embodiment 1, and the difference is only in the structure of the provided LED wafer.

As shown in FIG. 6 , as in Embodiment 1, the LED wafer 10 b provided in the LED wafer inspection method of Embodiment 3 includes: a wafer substrate 11 b ; a plurality of LEDs The chip 12b is disposed on the wafer base 11b, wherein each light-emitting diode chip 12b includes: a first electrode 121b disposed on the wafer base 11b; a main structure 122b, which is are disposed on the first electrode 121b; and a second electrode 123b is disposed on the main body structure 122b (in the top view of FIG. 6, the main body structure 122b is covered by the second electrode 123b) ; and at least one auxiliary electrode 13b, which is electrically connected to the first electrodes 121b of the light-emitting diode chips 12b.

As shown in FIG. 6 , in the light-emitting diode wafer 10b provided in the light-emitting diode wafer inspection method of the third embodiment, the first electrodes 121b are connected to each other to form a The first electrode layer 124b, and the light-emitting diode wafer 10b includes only one auxiliary electrode 13b.

In particular, as shown in FIG. 6 , in the LED wafer 10 b provided in the LED wafer inspection method of Embodiment 3, the LED wafer 10 b includes a main body region 31 and a The peripheral area 33, the main body structure 122b and the second electrode 123b in the light-emitting diode chips 10b are disposed in the main area 31; and the first electrode layer 124b extends from the main area 31 to the peripheral area 33 ; and the auxiliary electrode 13b is disposed on the portion of the first electrode layer 124 located in the peripheral region 33 .

Compared with Embodiment 2, in the LED wafer 10b provided in the LED wafer inspection method of Embodiment 3, the auxiliary electrode 13b is disposed in the first electrode layer 124 and located in the peripheral region 33 , the risk of short circuit due to accidental electrical connection between the auxiliary electrode 13b and the second electrode 123b can be reduced.

To sum up the above, the LED wafer inspection method of the present invention can provide at least one auxiliary electrode in the provided LED wafer, so that the LED wafer inspection method of the present invention can be used in the second A voltage is applied between the electrodes and the auxiliary electrode to provide power to the light-emitting The diode chip is used to perform optical inspection on the light emitting diode wafer without cutting the light emitting diode chip from the light emitting diode wafer first, which can greatly improve the inspection efficiency.

The above-mentioned embodiments are only used to illustrate the present invention, but not to limit the present invention. Any person skilled in the art can modify and change the above embodiments without departing from the spirit and scope of the present invention. Therefore, the protection scope of the right of the present invention should be as set forth in the patent application scope described later.

S101: Steps

S102: Steps

S103: Steps

Claims (9)

A method for detecting a light-emitting diode wafer, comprising: providing a light-emitting diode wafer, the light-emitting diode wafer comprising: a wafer base; a plurality of light-emitting diode chips, which are arranged on the wafer On a circular base, wherein each light-emitting diode chip includes: a first electrode, which is disposed on the wafer base; a main body structure, which is disposed on the first electrode; and a second electrode electrodes, which are disposed on the main body structure; and at least one auxiliary electrode, which is electrically connected to the first electrodes of the light-emitting diode chips and not connected to the second electrodes of the light-emitting diode chips In the light-emitting diode chips, a plurality of main structures are spaced apart from each other; a plurality of second electrodes are spaced apart from each other; and each of the first electrodes is at least partially not disposed thereon The main structure and the second electrode are covered; the power is supplied to the light-emitting diode chips; and the light sources generated by the light-emitting diode chips are optically detected. The light-emitting diode wafer inspection method according to claim 1, wherein, in the light-emitting diode wafers, a plurality of first electrodes are spaced apart from each other, and the first electrodes of each light-emitting diode wafer are An auxiliary electrode is respectively provided on the part of the electrode that is not covered by the main structure and the second electrode. The light-emitting diode wafer inspection method of claim 1, wherein, in the light-emitting diode wafers, the first electrodes are connected to each other to form a first electrode layer, and the light-emitting diode wafers The wafer contains only one auxiliary electrode. The light-emitting diode wafer inspection method according to claim 3, wherein the auxiliary electrode is disposed between two light-emitting diode wafers. The light-emitting diode wafer inspection method according to claim 3, wherein the light-emitting diode wafer system comprises a main body region and a peripheral region, the main body structure and the second electrode in the light-emitting diode wafers and the first electrode layer is extended from the main body region to the peripheral region; and the auxiliary electrode is arranged on the part of the first electrode layer which is located in the peripheral region. The light-emitting diode wafer inspection method according to any one of claims 1 to 5, wherein the upper surfaces of the second electrodes and the auxiliary electrode(s) are located on a plane parallel to the wafer substrate superior. The light-emitting diode wafer inspection method of claim 1, wherein the light-emitting diode wafers are powered by using a conductive probe module. The LED wafer inspection method according to claim 7, wherein the conductive probe module comprises: a substrate; a plurality of first conductive probes extending downward from the lower surface of the substrate, and The positions of the first conductive probes correspond to the second electrodes respectively; and at least one second conductive probe extends downward from the lower surface of the substrate, and the or the second conductive probes are The positions correspond to the auxiliary electrode(s), respectively. The light-emitting diode wafer inspection method according to claim 1, wherein the optical inspection at least includes light emission inspection, brightness inspection, and color coordinate inspection.

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