TW202228221A - Light-emitting diode wafer inspection method - Google Patents
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本發明係關於一種發光二極體晶圓檢測方法,尤指一種用於包括輔助電極的發光二極體晶圓的發光二極體晶圓檢測方法。The present invention relates to a method for detecting a light-emitting diode wafer, in particular to a method for detecting a light-emitting diode wafer for a light-emitting diode wafer including an auxiliary electrode.
現有技術中,多個發光二極體晶片可以在一晶圓上製作出來,但是多個發光二極體晶片必須先從晶圓上切割下來後,才能進行光學檢測,不僅造成發光二極體晶片在光學檢測上的困難度,也降低發光二極體晶片的檢測效率。In the prior art, a plurality of light-emitting diode chips can be fabricated on one wafer, but the plurality of light-emitting diode chips must be cut from the wafer before optical detection can be performed, which not only causes the light-emitting diode chips The difficulty in optical detection also reduces the detection efficiency of LED wafers.
本發明所要解決的技術問題在於,針對現有技術的不足提供一種發光二極體晶圓檢測方法。The technical problem to be solved by the present invention is to provide a light-emitting diode wafer detection method aiming at the deficiencies of the prior art.
為了解決上述的技術問題,本發明所採用的其中一技術方案是提供一種發光二極體晶圓檢測方法,其包括: 提供一發光二極體晶圓,該發光二極體晶圓包括: 一晶圓基底; 多個發光二極體晶片,其係設置在該晶圓基底上, 其中,每一發光二極體晶片包含: 一第一電極,其係設置於該晶圓基底之上; 一主體結構,其係設置於該第一電極之上;及 一第二電極,其係設置於該主體結構之上;以及 至少一輔助電極,其係與該等發光二極體晶片的第一電極電性連接; 於該等發光二極體晶片中,多個主體結構之間係彼此間隔;多個第二電極之間係彼此間隔;且各個第一電極係至少部分未被設置於其上的主體結構及第二電極所覆蓋; 提供電源給該等發光二極體晶片;以及 對該等發光二極體晶片所產生的光源進行光學檢測。 In order to solve the above-mentioned technical problems, one of the technical solutions adopted by the present invention is to provide a method for detecting a light-emitting diode wafer, which includes: A light-emitting diode wafer is provided, and the light-emitting diode wafer includes: a wafer substrate; a plurality of light-emitting diode chips, which are arranged on the wafer substrate, Wherein, each light-emitting diode chip includes: a first electrode, which is disposed on the wafer substrate; a main body structure disposed on the first electrode; and a second electrode disposed on the main structure; and at least one auxiliary electrode, which is electrically connected to the first electrodes of the light-emitting diode chips; In these light-emitting diode chips, the plurality of main structures are spaced apart from each other; the plurality of second electrodes are spaced apart from each other; and each of the first electrodes is at least partially not disposed on the main body structure and the second electrode. covered by two electrodes; providing power to the light-emitting diode chips; and Optical detection of the light sources produced by the light emitting diode wafers is carried out.
上述之發光二極體晶圓檢測方法,其中,於該等發光二極體晶片中,多個第一電極之間可彼此間隔,且每一發光二極體晶片的第一電極中未被設置於其上的主體結構及第二電極所覆蓋的部分可分別設置有一輔助電極。The above-mentioned LED wafer inspection method, wherein, in the LED chips, a plurality of first electrodes can be spaced apart from each other, and the first electrodes of each LED chip are not disposed An auxiliary electrode can be respectively provided on the main structure and the part covered by the second electrode.
上述之發光二極體晶圓檢測方法,其中,於該等發光二極體晶片中,該等第一電極可彼此連結以形成一第一電極層,且該發光二極體晶圓可僅包含一個輔助電極。The above-mentioned LED wafer inspection method, wherein, in the LED chips, the first electrodes can be connected to each other to form a first electrode layer, and the LED wafer can only contain an auxiliary electrode.
上述之發光二極體晶圓檢測方法,其中,該輔助電極係設置於二個發光二極體晶片之間。In the above light-emitting diode wafer inspection method, the auxiliary electrode is disposed between two light-emitting diode wafers.
上述之發光二極體晶圓檢測方法,其中,該發光二極體晶圓係包含一主體區域以及一外圍區域,該等發光二極體晶片中的主體結構及第二電極係設置於該主體區域中;且該第一電極層係自該主體區域延伸至該外圍區域;且該輔助電極係設置於該第一電極層中位於該外圍區域的部分上。The above LED wafer inspection method, wherein the LED wafer includes a main body region and a peripheral region, and the main body structure and the second electrode in the LED wafers are disposed on the main body and the first electrode layer extends from the main body region to the peripheral region; and the auxiliary electrode is disposed on the portion of the first electrode layer located in the peripheral region.
上述之發光二極體晶圓檢測方法,其中,該等第二電極及該或該等輔助電極之上表面係位於與該晶圓基底平行之一平面上。In the above-mentioned LED wafer inspection method, the upper surfaces of the second electrodes and the auxiliary electrode(s) are located on a plane parallel to the wafer substrate.
上述之發光二極體晶圓檢測方法,其中,該等發光二極體晶片是透過使用一導電探針模組而得到電源供應。In the above-mentioned LED wafer inspection method, the LED chips are supplied with power by using a conductive probe module.
上述之發光二極體晶圓檢測方法,其中,該導電探針模組包含: 一基板; 多個第一導電探針,其係自該基板之下表面向下延伸,且該等第一導電探針的位置係分別對應該等第二電極;以及 至少一第二導電探針,其係自該基板之下表面向下延伸,且該或該等第二導電探針的位置係分別對應該或該等輔助電極。 In the above-mentioned LED wafer inspection method, the conductive probe module comprises: a substrate; a plurality of first conductive probes extending downward from the lower surface of the substrate, and the positions of the first conductive probes correspond to the second electrodes respectively; and At least one second conductive probe extends downward from the lower surface of the substrate, and the position of the or the second conductive probe corresponds to the or the auxiliary electrode respectively.
上述之發光二極體晶圓檢測方法,其中,該光學檢測至少包括發光檢測、亮度檢測以及色座標檢測。In the above light-emitting diode wafer inspection method, the optical inspection at least includes light emission inspection, luminance inspection and color coordinate inspection.
本發明的其中一有益效果在於,本發明所提供的一種發光二極體晶圓檢測方法,其能透過於所提供之發光二極體晶圓中設置至少一輔助電極,以使得本發明的發光二極體晶圓檢測方法可以於第二電極以及輔助電極兩者之間施加電壓以提供電源給該等發光二極體晶片,藉此對發光二極體晶圓進行光學檢測,無需將發光二極體晶片先從發光二極體晶圓上切割下來,可大幅提升檢測效率。One of the beneficial effects of the present invention is that, in the light-emitting diode wafer detection method provided by the present invention, at least one auxiliary electrode can be provided in the provided light-emitting diode wafer, so that the light-emitting diode of the present invention can emit light. The diode wafer inspection method can apply a voltage between the second electrode and the auxiliary electrode to provide power to the light-emitting diode wafers, thereby optically inspecting the light-emitting diode wafers without requiring the light-emitting diode wafers to be inspected. The polar body wafer is first cut from the light emitting diode wafer, which can greatly improve the detection efficiency.
為使能進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本發明加以限制。To further understand the features and technical content of the present invention, please refer to the following detailed descriptions and drawings related to the present invention, however, the drawings provided are only for reference and description, not for limiting the present invention.
以下係藉由特定的具體實施例說明本發明之實施方式,熟習此技藝之人士可由本說明書所揭示之內容瞭解本發明之其他優點與功效。本發明也可藉由其他不同的具體實施例加以實施或應用,本說明書中的各項細節亦可基於不同觀點與應用,在不悖離本發明之精神下進行各種修飾與變更。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。The following describes the implementation of the present invention through specific embodiments, and those skilled in the art can understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied by other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the spirit of the present invention. In addition, the term "or", as used herein, should include any one or a combination of more of the associated listed items, as the case may be.
實施例1Example 1
如圖1所示,本發明實施例1之發光二極體晶圓檢測方法,其包括:步驟S101:提供一發光二極體晶圓,該發光二極體晶圓包括:一晶圓基底;多個發光二極體晶片;至少一輔助電極;步驟S102:提供電源給該等發光二極體晶片;以及步驟S103:對該等發光二極體晶片所產生的光源進行光學檢測。As shown in FIG. 1 , the method for detecting a light-emitting diode wafer according to Embodiment 1 of the present invention includes: step S101 : providing a light-emitting diode wafer, and the light-emitting diode wafer includes: a wafer substrate; a plurality of light-emitting diode chips; at least one auxiliary electrode; step S102 : providing power to the light-emitting diode chips; and step S103 : performing optical detection on the light sources generated by the light-emitting diode chips.
具體而言,如圖2所示,實施例1之發光二極體晶圓檢測方法中所提供之發光二極體晶圓10包括:一晶圓基底11;多個發光二極體晶片12,其係設置在該晶圓基底11上,其中,每一發光二極體晶片12包含:一第一電極121,其係設置於該晶圓基底11之上;一主體結構122,其係設置於該第一電極121之上;及一第二電極123,其係設置於該主體結構122之上;以及至少一輔助電極13,其係與該等發光二極體晶片12的第一電極121電性連接。Specifically, as shown in FIG. 2 , the
更具體而言,如圖2所示,實施例1之發光二極體晶圓檢測方法中所提供之發光二極體晶圓10中,多個主體結構122之間係彼此間隔;多個第二電極123之間係彼此間隔;且各個第一電極121係至少部分未被設置於其上的主體結構122及第二電極12所覆蓋。More specifically, as shown in FIG. 2 , in the light-emitting
特別地,如圖2所示,實施例1之發光二極體晶圓檢測方法中所提供之發光二極體晶圓10中,多個第一電極121之間係彼此間隔,且每一發光二極體晶片12的第一電極121中未被設置於其上的主體結構122及第二電極123所覆蓋的部分係分別設置有一輔助電極13。In particular, as shown in FIG. 2 , in the
舉例來說,該等第一電極121可源自單一第一電極層,並於該發光二極體晶圓的製程中,藉由蝕刻技術,將單一第一電極層分割成多個彼此間隔的第一電極121。For example, the
如上所述,實施例1之發光二極體晶圓檢測方法透過於所提供之發光二極體晶圓10中設置至少一輔助電極13,以使其可以透過於第二電極123以及輔助電極13兩者之間施加電壓以提供電源給該等發光二極體晶片12,藉此對發光二極體晶圓10進行光學檢測,無需將發光二極體晶片12先從發光二極體晶圓10上切割下來,可大幅提升檢測效率。As described above, the light-emitting diode wafer detection method of the first embodiment is provided by disposing at least one
於一較佳實施方式中,該等第二電極及該或該等輔助電極之上表面係位於與該晶圓基底平行之一平面上,以使該等第二電極及該或該等輔助電極易於透過下端位於同一平面之多個導電探針所導通,但本發明並不限於此。In a preferred embodiment, the upper surfaces of the second electrodes and the auxiliary electrode(s) are located on a plane parallel to the wafer substrate, so that the second electrodes and the auxiliary electrode(s) are It is easy to conduct through a plurality of conductive probes whose lower ends are located on the same plane, but the present invention is not limited to this.
於一較佳實施方式中,該光學檢測至少包括發光檢測(檢測發光二極體晶片是否有產生光源)、亮度檢測(檢測發光二極體晶片所產生的光源的亮度)以及色座標檢測(檢測發光二極體晶片所產生的光源在色度座標圖上的分布),但本發明並不限於此。In a preferred embodiment, the optical detection at least includes luminescence detection (detecting whether the light-emitting diode chip generates a light source), brightness detection (detecting the brightness of the light source generated by the light-emitting diode chip), and color coordinate detection (detecting distribution of the light source generated by the light-emitting diode wafer on the chromaticity coordinate diagram), but the present invention is not limited thereto.
於一特定實施方式中,實施例1之發光二極體晶圓檢測方法中,該等發光二極體晶片12可透過使用一導電探針模組20而得到電源供應,但本發明並不限於此。In a specific embodiment, in the light-emitting diode wafer inspection method of Example 1, the light-
舉例來說,如圖3所示,該導電探針模組20可包含:一基板21;多個第一導電探針22,其係自該基板21之下表面向下延伸,且該等第一導電探針22的位置係分別對應該等第二電極123;以及至少一第二導電探針23,其係自該基板21之下表面向下延伸,且該或該等第二導電探針23的位置係分別對應該或該等輔助電極13。For example, as shown in FIG. 3 , the
具體而言,圖3所示之導電探針模組20包含:多個第二導電探針23,且該等第二導電探針23的位置係分別對應該等輔助電極13,但本發明並不限於此,於另一實施方式中,導電探針模組可僅包含一個第二導電探針,且該第二導電探針係對應單一輔助電極。Specifically, the
藉由圖3所示之導電探針模組20可更有效率地於多個第二電極以及多個輔助電極兩者之間施加電壓,以提升檢測效率。The
實施例2Example 2
實施例2之發光二極體晶圓檢測方法大致上與實施例1相同,其差異僅在於所提供之發光二極體晶圓的結構。The LED wafer inspection method of Embodiment 2 is substantially the same as that of Embodiment 1, and the difference is only in the structure of the provided LED wafer.
如圖4所示,與實施例1相同地,實施例2之發光二極體晶圓檢測方法中所提供之發光二極體晶圓10a包括:一晶圓基底11a;多個發光二極體晶片12a,其係設置在該晶圓基底11a上,其中,每一發光二極體晶片12a包含:一第一電極121a,其係設置於該晶圓基底11a之上;一主體結構122a,其係設置於該第一電極121a之上;及一第二電極123a,其係設置於該主體結構122a之上;以及至少一輔助電極13a,其係與該等發光二極體晶片12a的第一電極121a電性連接。As shown in FIG. 4 , as in Embodiment 1, the
特別地,如圖4所示,實施例2之發光二極體晶圓檢測方法中所提供之發光二極體晶圓10a中,該等第一電極121a係彼此連結以形成一第一電極層124a,且該發光二極體晶圓10a僅包含一個輔助電極13a。此外,該輔助電極13a係設置於二個發光二極體晶片12a之間。In particular, as shown in FIG. 4, in the
相較於實施例1,實施例2之發光二極體晶圓檢測方法中所提供之發光二極體晶圓10a僅包含一個輔助電極13a,且該等第一電極121a係彼此連結以形成一第一電極層124a,藉此可於多個第二電極123a以及單一輔助電極13a兩者之間施加電壓以提供電源給該等發光二極體晶片12a,藉此而對發光二極體晶圓10a進行光學檢測,可減少輔助電極13a所需設置之數量,藉此簡化發光二極體晶圓10a的製備流程,且藉此提升檢測效率。Compared with Embodiment 1, the
於一特定實施方式中,實施例2之發光二極體晶圓檢測方法中,該等發光二極體晶片12a可透過使用一導電探針模組20a而得到電源供應,但本發明並不限於此。In a specific embodiment, in the LED wafer inspection method of Example 2, the
舉例來說,如圖5所示,該導電探針模組20a可包含:一基板21a;多個第一導電探針22a,其係自該基板21a之下表面向下延伸,且該等第一導電探針22a的位置係分別對應該等第二電極123a;以及至少一第二導電探針23a,其係自該基板21a之下表面向下延伸,且該或該等第二導電探針23a的位置係分別對應該或該等輔助電極13a。For example, as shown in FIG. 5, the
具體而言,圖5所示之導電探針模組20a包含:單一第二導電探針23a,且該第二導電探針23a的位置係對應單一輔助電極13a。Specifically, the
藉由圖5所示之導電探針模組20a可更有效率地於多個第二電極以及單一輔助電極兩者之間施加電壓,以提升檢測效率。The
實施例3Example 3
實施例3之發光二極體晶圓檢測方法大致上與實施例1相同,其差異僅在於所提供之發光二極體晶圓的結構。The LED wafer inspection method of Embodiment 3 is substantially the same as that of Embodiment 1, and the difference is only in the structure of the provided LED wafer.
如圖6所示,與實施例1相同地,實施例3之發光二極體晶圓檢測方法中所提供之發光二極體晶圓10b包括:一晶圓基底11b;多個發光二極體晶片12b,其係設置在該晶圓基底11b上,其中,每一發光二極體晶片12b包含:一第一電極121b,其係設置於該晶圓基底11b之上;一主體結構122b,其係設置於該第一電極121b之上;及一第二電極123b,其係設置於該主體結構122b之上(於圖6之俯視圖中,該主體結構122b係為該第二電極123b所覆蓋);以及至少一輔助電極13b,其係與該等發光二極體晶片12b的第一電極121b電性連接。As shown in FIG. 6 , as in Embodiment 1, the
如圖6所示,與實施例2相同地,實施例3之發光二極體晶圓檢測方法中所提供之發光二極體晶圓10b中,該等第一電極121b係彼此連結以形成一第一電極層124b,且該發光二極體晶圓10b僅包含一個輔助電極13b。As shown in FIG. 6 , in the light-
特別地,如圖6所示,實施例3之發光二極體晶圓檢測方法中所提供之發光二極體晶圓10b中,該發光二極體晶圓10b係包含一主體區域31以及一外圍區域33,該等發光二極體晶片10b中的主體結構122b及第二電極123b係設置於該主體區域31中;且該第一電極層124b係自該主體區域31延伸至該外圍區域33;且該輔助電極13b係設置於該第一電極層124中位於該外圍區域33的部分上。In particular, as shown in FIG. 6 , in the
相較於實施例2,實施例3之發光二極體晶圓檢測方法中所提供之發光二極體晶圓10b中,該輔助電極13b係設置於該第一電極層124中位於該外圍區域33的部分上,可減少因輔助電極13b與第二電極123b之間意外地電性連接而形成短路的風險。Compared with Embodiment 2, in the
綜合上述,本發明之發光二極體晶圓檢測方法能透過於所提供之發光二極體晶圓中設置至少一輔助電極,以使得本發明的發光二極體晶圓檢測方法可以於第二電極以及輔助電極兩者之間施加電壓以提供電源給該等發光二極體晶片,藉此對發光二極體晶圓進行光學檢測,無需將發光二極體晶片先從發光二極體晶圓上切割下來,可大幅提升檢測效率。To sum up the above, the LED wafer inspection method of the present invention can provide at least one auxiliary electrode in the provided LED wafer, so that the LED wafer inspection method of the present invention can be used in the second A voltage is applied between the electrodes and the auxiliary electrodes to provide power to the LED chips, thereby performing optical inspection on the LED wafers without removing the LED chips from the LED wafers first. It can be cut from the top to greatly improve the detection efficiency.
上述實施例僅例示性說明本發明,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修飾與改變。因此,本發明之權利保護範圍,應如後述之申請專利範圍所載。The above-mentioned embodiments are only used to illustrate the present invention, but not to limit the present invention. Any person skilled in the art can modify and change the above embodiments without departing from the spirit and scope of the present invention. Therefore, the protection scope of the right of the present invention should be as set forth in the patent application scope described later.
10:發光二極體晶圓
10a:發光二極體晶圓
10b:發光二極體晶圓
11:晶圓基底
11a:晶圓基底
11b:晶圓基底
12:發光二極體晶片
12a:發光二極體晶片
12b:發光二極體晶片
121:第一電極
121a:第一電極
121b:第一電極
122:主體結構
122a:主體結構
122b:主體結構
123:第二電極
123a:第二電極
123b:第二電極
124a:第一電極層
124b:第一電極層
13:輔助電極
13a:輔助電極
13b:輔助電極
20:導電探針模組
20a:導電探針模組
21:基板
21a:基板
22:第一導電探針
22a:第一導電探針
23:第二導電探針
23a:第二導電探針
31:主體區域
33:外圍區域
S101:步驟
S102:步驟
S103:步驟
10: Light Emitting Diode Wafer
10a: Light Emitting Diode Wafer
10b: Light Emitting Diode Wafer
11:
[圖1]係為本發明實施例1之發光二極體晶圓檢測方法的流程圖。 [圖2]係為本發明實施例1之發光二極體晶圓檢測方法中所提供的發光二極體晶圓的剖面示意圖。 [圖3]係為本發明實施例1之發光二極體晶圓檢測方法中所提供的發光二極體晶圓配合導電探針模組進行檢測的剖面示意圖。 [圖4]係為本發明實施例2之發光二極體晶圓檢測方法中所提供的發光二極體晶圓的剖面示意圖。 [圖5]係為本發明實施例2之發光二極體晶圓檢測方法中所提供的發光二極體晶圓配合導電探針模組進行檢測的剖面示意圖。 [圖6]係為本發明實施例3之發光二極體晶圓檢測方法中所提供的發光二極體晶圓的俯視示意圖。 [FIG. 1] is a flowchart of a method for detecting a light-emitting diode wafer according to Embodiment 1 of the present invention. 2 is a schematic cross-sectional view of a light-emitting diode wafer provided in the light-emitting diode wafer detection method according to Embodiment 1 of the present invention. 3 is a schematic cross-sectional view of the LED wafer provided in the LED wafer detection method according to Embodiment 1 of the present invention and the conductive probe module for detection. 4 is a schematic cross-sectional view of a light-emitting diode wafer provided in a method for detecting a light-emitting diode wafer according to Embodiment 2 of the present invention. 5 is a schematic cross-sectional view of the LED wafer provided in the LED wafer detection method according to Embodiment 2 of the present invention and the conductive probe module for detection. 6 is a schematic top view of a light-emitting diode wafer provided in the light-emitting diode wafer detection method according to Embodiment 3 of the present invention.
S101:步驟 S101: Steps
S102:步驟 S102: Steps
S103:步驟 S103: Steps
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