TWI762034B - Probe cleaning device - Google Patents

Probe cleaning device Download PDF

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TWI762034B
TWI762034B TW109139909A TW109139909A TWI762034B TW I762034 B TWI762034 B TW I762034B TW 109139909 A TW109139909 A TW 109139909A TW 109139909 A TW109139909 A TW 109139909A TW I762034 B TWI762034 B TW I762034B
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layer
cleaning
probe
abrasive particles
cleaning device
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TW109139909A
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TW202220761A (en
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呂文裕
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海帕斯科技股份有限公司
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Abstract

一種探針清潔裝置,包含一清潔層。該清潔層包括一層位於中間的第一層體,以及兩層分別一體連接於該第一層體的兩相反側的第二層體。該等研磨顆粒設置在該第一層體及該第二層體的其中至少一者且適用於清潔一探針。其中,以該清潔層及該等研磨顆粒的總重為100wt%計,該清潔層為20wt%~80wt%,該等研磨顆粒為20wt%~80wt%。本發明提供了一種適用於清潔探針上的氧化物或髒汙的解決方案。A probe cleaning device includes a cleaning layer. The cleaning layer includes a first layer body in the middle, and two second layer bodies integrally connected to two opposite sides of the first layer body respectively. The abrasive particles are disposed on at least one of the first layer and the second layer and are suitable for cleaning a probe. Wherein, based on the total weight of the cleaning layer and the abrasive particles as 100wt%, the cleaning layer is 20wt%-80wt%, and the abrasive particles are 20wt%-80wt%. The present invention provides a solution suitable for cleaning oxides or contamination on probes.

Description

探針清潔裝置Probe cleaning device

本發明是有關於一種以探針進行量測之儀器的周邊裝置,特別是指一種適用於清除探針上的附著物的探針清潔裝置。The present invention relates to a peripheral device of a measuring instrument with a probe, in particular to a probe cleaning device suitable for removing the attachments on the probe.

包含探針的儀器,例如用以量測薄膜電阻的四點探針儀,其所包含的探針於久經使用後,可能會有在表面形成氧化物或沾附髒汙的可能,而有加以清潔的需求,然而探針通常相當細緻,又不適用以菜瓜布或砂紙等常見用於清潔拋光的物品處理,因此確實需要提供一種專門適用於清潔探針的解決方案。Instruments containing probes, such as a four-point probe for measuring thin-film resistance, may form oxides or contamination on the surface of the probes after being used for a long time. However, the probes are usually quite delicate and cannot be handled with items commonly used for cleaning and polishing, such as vegetable cloth or sandpaper, so there is indeed a need to provide a solution specifically suitable for cleaning probes.

本發明的其中一目的在於:提供一種能夠克服先前技術的至少一個缺點的探針清潔裝置。One of the objects of the present invention is to provide a probe cleaning device that overcomes at least one of the disadvantages of the prior art.

該探針清潔裝置,適用於清潔一探針,並包含一清潔層,以及數研磨顆粒。該清潔層包括一層位於中間的第一層體,以及兩層分別一體連接於該第一層體的兩相反側的第二層體。該等研磨顆粒設置在該第一層體及該第二層體的其至少一者且適用於清潔該探針。其中,以該清潔層及該等研磨顆粒的總重為100wt%計,該清潔層為20wt%~80wt%,該等研磨顆粒為20wt%~80wt%。The probe cleaning device is suitable for cleaning a probe, and includes a cleaning layer and several abrasive particles. The cleaning layer includes a first layer body in the middle, and two second layer bodies integrally connected to two opposite sides of the first layer body respectively. The abrasive particles are disposed on at least one of the first layer and the second layer and are suitable for cleaning the probe. Wherein, based on the total weight of the cleaning layer and the abrasive particles as 100wt%, the cleaning layer is 20wt%-80wt%, and the abrasive particles are 20wt%-80wt%.

本發明的功效在於:可供探針反覆插入,而可透過該等研磨顆粒研磨清除探針上所形成的氧化物或所附著的髒汙。The effect of the present invention is that the probes can be inserted repeatedly, and the oxides formed on the probes or the attached dirt can be removed by the abrasive particles.

本發明的另外一目的在於:提供一種能夠克服先前技術的至少一個缺點的探針清潔裝置。Another object of the present invention is to provide a probe cleaning device that overcomes at least one of the disadvantages of the prior art.

該探針清潔裝置,適用於清潔一探針,並包含一清潔塊,以及數研磨顆粒。該清潔塊包括一個位於中間的內塊體、一個包覆該內塊體並一體連接該內塊體的外層體。該等研磨顆粒設置在該內塊體及該外層體的其中至少一者且適用於清潔該探針。其中,以該清潔塊及該等研磨顆粒的總重為100wt%計,該清潔塊為20wt%~80wt%,該等研磨顆粒為20wt%~80wt%。The probe cleaning device is suitable for cleaning a probe and includes a cleaning block and several abrasive particles. The cleaning block includes an inner block located in the middle, and an outer body covering the inner block and integrally connecting the inner block. The abrasive particles are disposed on at least one of the inner block and the outer body and are suitable for cleaning the probe. Wherein, based on the total weight of the cleaning block and the abrasive particles as 100 wt %, the cleaning block is 20 wt % to 80 wt %, and the abrasive particles are 20 wt % to 80 wt %.

本發明的功效在於:可供探針反覆插入,而可透過該等研磨顆粒研磨清除探針上所形成的氧化物或所附著的髒汙。The effect of the present invention is that the probes can be inserted repeatedly, and the oxides formed on the probes or the attached dirt can be removed by the abrasive particles.

《實施例1》"Example 1"

參閱圖1、2,本發明探針清潔裝置的一個實施例1,適用於清潔一量測儀器的一探針2。所述的量測儀器舉例來說能為用以量測薄膜電阻的四點探針儀,但並不以此為限。1 and 2, an embodiment 1 of the probe cleaning device of the present invention is suitable for cleaning a probe 2 of a measuring instrument. The measuring instrument can be, for example, a four-point probe instrument for measuring sheet resistance, but not limited thereto.

該實施例1包含一清潔層3,以及數顆設置在該清潔層3中的研磨顆粒4。其中,該實施例1僅包含該清潔層3的層狀結構,而不包含其他層狀結構。The embodiment 1 includes a cleaning layer 3 and several abrasive particles 4 disposed in the cleaning layer 3 . Wherein, the example 1 only includes the layered structure of the cleaning layer 3, and does not include other layered structures.

該清潔層3以丁腈橡膠(NBR)製成,且以該清潔層3與該等研磨顆粒4的總重為100wt%計,該清潔層3佔20wt%。The cleaning layer 3 is made of nitrile butadiene rubber (NBR), and based on the total weight of the cleaning layer 3 and the abrasive particles 4 as 100 wt %, the cleaning layer 3 accounts for 20 wt %.

在本發明的其他實施態樣中,以該清潔層3與該等研磨顆粒4的總重為100wt%計,該清潔層3也能佔 αwt%, α為20~80間的整數。 In other embodiments of the present invention, based on the total weight of the cleaning layer 3 and the abrasive particles 4 being 100 wt %, the cleaning layer 3 can also account for α wt %, where α is an integer between 20 and 80.

在本發明的其他實施態樣中,該清潔層3也能由選自於矽膠材料、聚乙烯(PE)、聚丙烯(PP)、聚苯乙烯(PS)、苯乙烯-乙烯-丁烯-苯乙烯共聚物(SEBS)、乙烯丙烯橡膠(EPDM)、丁二烯橡膠、氯丁橡膠(CR)及丁腈橡膠(NBR)所組成的物質群中選擇的其中至少一種所製成,只要A型蕭氏硬度為 i即可。其中, i為0~90間的整數。 In other embodiments of the present invention, the cleaning layer 3 can also be selected from silicone materials, polyethylene (PE), polypropylene (PP), polystyrene (PS), styrene-ethylene-butylene- Made of at least one selected from the group consisting of styrene copolymer (SEBS), ethylene propylene rubber (EPDM), butadiene rubber, neoprene rubber (CR) and nitrile rubber (NBR), as long as A The type of Shore hardness can be i . Wherein, i is an integer between 0 and 90.

該清潔層3的整體厚度T0為280µm,並包括一層位於中間的第一層體31,以及兩層分別一體連接於該第一層體31的兩相反面的第二層體32。在本發明的其他實施態樣中,該清潔層3的整體厚度T0也能為 xµm, x為100~1600間的整數。 The overall thickness T0 of the cleaning layer 3 is 280 µm, and includes a first layer body 31 in the middle, and two second layer bodies 32 integrally connected to opposite sides of the first layer body 31 respectively. In other embodiments of the present invention, the overall thickness T0 of the cleaning layer 3 can also be x μm, where x is an integer between 100 and 1600.

該第一層體31的一第一層厚T1為100µm,且由於該第一層體31與每一第二層體32均為該清潔層3的一部分,因此該第一層體31與每一第二層體32的材料與該清潔層3前述的組成相同。每一第二層體32的一第二層厚T2為90µm,並包括一相反於該第一層體31的外表面321。A first layer thickness T1 of the first layer body 31 is 100 μm, and since the first layer body 31 and each second layer body 32 are part of the cleaning layer 3 , the first layer body 31 and each layer body 32 are part of the cleaning layer 3 . The material of a second layer body 32 is the same as the aforementioned composition of the cleaning layer 3 . Each second layer body 32 has a second layer thickness T2 of 90 μm and includes an outer surface 321 opposite to the first layer body 31 .

在本發明的其他實施態樣中,該第一層體31的該第一層厚T1也能為 ymm, y為80~1400間的整數。在本發明的其他實施態樣中,該第二層體32的該第二層厚T2也能為 zmm, z為10~100間的整數。 In other embodiments of the present invention, the first layer thickness T1 of the first layer body 31 can also be y mm, and y is an integer between 80 and 1400. In other embodiments of the present invention, the second layer thickness T2 of the second layer body 32 can also be z mm, and z is an integer between 10 and 100.

該等研磨顆粒4是以氧化鋁製成,平均粒徑約為1µm,設置在該第一層體31及該第二層體32中,並適用於清潔該探針2。以該清潔層3與該等研磨顆粒4的總重為100wt%計,該等研磨顆粒4佔80wt%。更進一步來說,以該清潔層3與該等研磨顆粒4的總重為100wt%計,位於該第一層體31中的研磨顆粒4為20wt%,位於該等第二層體32中的研磨顆粒4則為60wt%。The abrasive particles 4 are made of alumina with an average particle size of about 1 µm, are disposed in the first layer body 31 and the second layer body 32 , and are suitable for cleaning the probe 2 . Based on the total weight of the cleaning layer 3 and the abrasive particles 4 as 100 wt %, the abrasive particles 4 account for 80 wt %. Furthermore, based on the total weight of the cleaning layer 3 and the abrasive particles 4 being 100 wt %, the abrasive particles 4 in the first layer 31 are 20 wt %, and the abrasive particles 4 in the second layer 32 are 20 wt %. The abrasive particle 4 is 60 wt%.

由於在實施例1中,該等研磨顆粒4的重量百分比遠大於該清潔層3的重量百分比,或者說該清潔層3的重量百分比遠小於該等研磨顆粒4,因此於實施例1中,該清潔層3是作為黏合該等研磨顆粒4的黏合劑使用。Since in Example 1, the weight percent of the abrasive particles 4 is much larger than that of the cleaning layer 3, or the weight percent of the cleaning layer 3 is much smaller than the weight percent of the abrasive particles 4, in Example 1, the The cleaning layer 3 is used as a binder for bonding the abrasive particles 4 .

在本發明的其他實施態樣中,以該清潔層3與該等研磨顆粒4的總重為100wt%計,該等研磨顆粒4也能佔β wt%,β為20~80間的整數。以該清潔層3與該等研磨顆粒4的總重為100wt%計,位於該第一層體31中的研磨顆粒4也能為θ wt%,θ為5~75間的整數,位於該等第二層體32中的研磨顆粒4也能為δ wt%,δ為5~75間的整數。在本發明的其他實施態樣中,該等研磨顆粒4的粒徑及/或平均粒徑也能為0.1~10µm。In other embodiments of the present invention, based on the total weight of the cleaning layer 3 and the abrasive particles 4 being 100 wt %, the abrasive particles 4 can also account for β wt %, where β is an integer between 20 and 80. Based on the total weight of the cleaning layer 3 and the abrasive particles 4 being 100 wt %, the abrasive particles 4 in the first layer body 31 can also be θ wt %, and θ is an integer between 5 and 75, which is located in the The abrasive particles 4 in the second layer body 32 can also be δ wt %, where δ is an integer between 5 and 75. In other embodiments of the present invention, the particle size and/or the average particle size of the abrasive particles 4 can also be 0.1-10 µm.

本實施例1使用時是如圖2所示地供該探針2插入其中。該探針2在插入本實施例1的過程中,附著於該探針2上的附著物或髒汙能被該等研磨顆粒4刮除,從而使該探針2被本實施例1所清潔。When the present embodiment 1 is used, the probe 2 is inserted therein as shown in FIG. 2 . During the process of inserting the probe 2 into the present embodiment 1, the attachments or dirt attached to the probe 2 can be scraped off by the abrasive particles 4, so that the probe 2 can be cleaned by the present embodiment 1 .

本實施例1的特點在於:能透過該等研磨顆粒4清潔該探針2上的氧化物或髒汙。此外,由於本實施例1僅包含單層的該清潔層3而未包含其他層狀結構,故本實施例1還具有整體厚度T0較薄的輕薄優點。The feature of the present embodiment 1 is that oxides or dirt on the probe 2 can be cleaned through the abrasive particles 4 . In addition, because the present embodiment 1 only includes a single layer of the cleaning layer 3 and does not include other layered structures, the present embodiment 1 also has the advantage of being light and thin in that the overall thickness T0 is relatively thin.

《實施例2~5》"Examples 2 to 5"

實施例2~5與實施例1類似,不同的地方在於:實施例2的清潔層3的佔比提高至80wt%,實施例3以苯乙烯-乙烯-丁烯-苯乙烯共聚物(SEBS)取代丁腈橡膠(NBR),實施例4除了以苯乙烯-乙烯-丁烯-苯乙烯共聚物(SEBS)取代丁腈橡膠(NBR)外,清潔層3的佔比也提高至80wt%,實施例5的清潔層的佔比為60%,其中30%為SEBS,另外30%為NBR。實施例2~5實際上所使用的材料種類與使用量,記錄於表1中。Examples 2 to 5 are similar to Example 1, except that the proportion of the cleaning layer 3 in Example 2 is increased to 80 wt%, and Example 3 uses styrene-ethylene-butylene-styrene copolymer (SEBS) Instead of nitrile rubber (NBR), in Example 4, in addition to replacing nitrile rubber (NBR) with styrene-ethylene-butylene-styrene copolymer (SEBS), the proportion of cleaning layer 3 was also increased to 80wt%. The proportion of the cleaning layer in Example 5 is 60%, of which 30% is SEBS and the other 30% is NBR. The types and amounts of materials actually used in Examples 2 to 5 are recorded in Table 1.

《清潔效果測試》"Cleaning Effect Test"

〈準備樣品〉<Preparation of samples>

準備一塊以錫製成的金屬墊,以及數支全新探針。將每一全新探針以針壓500 UM的條件,反覆插入該金屬墊中1000次,使全新探針使用後成為樣品探針。其中,每一樣品探針與一開始對應的該全新探針相比,電阻值將因附著物或髒汙的影響,由約50毫歐姆上升至約100毫歐姆。Get a metal pad made of tin, and several new probes. Each new probe was repeatedly inserted into the metal pad 1000 times under the condition of acupuncture pressure of 500 UM, so that the new probe became a sample probe after use. Wherein, the resistance value of each sample probe will increase from about 50 milliohms to about 100 milliohms due to the influence of attachments or dirt, compared with the new probe corresponding to the beginning.

〈清潔探針〉<Cleaning the probe>

將該等樣品探針同樣以針壓500 UM的條件,分別反覆插入實施例1~5中,於每次插入拔出後,測量一次樣品探針的電阻值,直至樣品探針的電阻值降回至約50毫歐姆,並記錄降回至約50毫歐姆所需的清潔次數(插拔次數)。The sample probes were also repeatedly inserted into Examples 1 to 5 under the condition of acupuncture pressure of 500 UM. After each insertion and extraction, the resistance value of the sample probe was measured once until the resistance value of the sample probe decreased. Return to about 50 milliohms and record the number of cleanings (mating cycles) required to get back to about 50 milliohms.

〈檢視針形〉<Inspect the needle shape>

將清潔後的樣品探針以針尖朝上的方式放置在顯微鏡下觀察觀察針尖的狀況,並將清潔後的針形記錄於表1中。 [表1]   實施例1 實施例2 種類 使用量(wt%) 種類 使用量(wt%) 清潔層3 NBR 20 NBR 80 研磨顆粒4 氧化鋁 80 氧化鋁 20 合計 100 100 降為50毫歐姆所需次數 6 10 針形測試 不變形 不變形   實施例3 實施例4 種類 使用量(wt%) 種類 使用量(wt%) 清潔層3 SEBS 20 SEBS 80 研磨顆粒4 氧化鋁 80 氧化鋁 20 合計 100 100 降為50毫歐姆所需次數 6 9 針形測試 磨平 磨平   實施例5   種類 使用量(wt%)   清潔層3 SEBS 30   NBR 30   研磨顆粒4 氧化鋁 40   合計 100   降為50毫歐姆所需次數 8   針形測試 不變形   The cleaned sample probe was placed under a microscope with the needle tip facing upwards to observe the condition of the needle tip, and the shape of the cleaned needle was recorded in Table 1. [Table 1] Example 1 Example 2 type Usage amount (wt%) type Usage amount (wt%) cleaning layer 3 NBR 20 NBR 80 Abrasive particles 4 Alumina 80 Alumina 20 total 100 100 Number of times required to drop to 50 milliohms 6 10 pin test not deformed not deformed Example 3 Example 4 type Usage amount (wt%) type Usage amount (wt%) cleaning layer 3 SEBS 20 SEBS 80 Abrasive particles 4 Alumina 80 Alumina 20 total 100 100 Number of times required to drop to 50 milliohms 6 9 pin test smooth smooth Example 5 type Usage amount (wt%) cleaning layer 3 SEBS 30 NBR 30 Abrasive particles 4 Alumina 40 total 100 Number of times required to drop to 50 milliohms 8 pin test not deformed

從表1的實驗結果可以看到,使用NBR相較於使用SEBS,更進一步具有不易使探針磨平的特點,另外也能看出該等研磨顆粒4的使用量較多時,也就是該等研磨顆粒4的重量百分比佔比較高時,使樣品探針的電阻值回復至約50毫歐姆所需的清潔次數較少,也就是,該等研磨顆粒4的重量百分比越高,清潔力越好。From the experimental results in Table 1, it can be seen that compared with using SEBS, the use of NBR further has the characteristics that it is not easy to make the probe smooth. When the weight percentage of the abrasive particles 4 is high, the number of cleanings required to restore the resistance value of the sample probe to about 50 milliohms is less, that is, the higher the weight percentage of the abrasive particles 4, the higher the cleaning power. it is good.

《實施例6》"Example 6"

參閱圖3,本發明探針清潔裝置的一個實施例6與實施例1類似,不同的地方在於實施例6還進一步包含一層貼合在其中一第二層體32的該外表面321的黏著層51,以及一層貼合該黏著層51相反於該外表面321的一面的離型層52。實施例6除了同樣具有實施例1的優點外,在撕除該離型層52後,還能黏著在該量測儀器上或旁邊,以便於清潔該探針2。Referring to FIG. 3 , Embodiment 6 of the probe cleaning device of the present invention is similar to Embodiment 1, except that Embodiment 6 further includes an adhesive layer attached to the outer surface 321 of one of the second layers 32 51 , and a release layer 52 attached to the side of the adhesive layer 51 opposite to the outer surface 321 . In addition to the advantages of the first embodiment, the sixth embodiment can also be adhered to or beside the measuring instrument after the release layer 52 is removed, so as to facilitate the cleaning of the probe 2 .

《實施例7》"Example 7"

參閱圖4、5,本發明探針清潔裝置的一個實施例7,同樣適用於清潔該探針2(見圖2),並包含一清潔塊6,以及數顆設置在該清潔塊6中的所述研磨顆粒4。以該清潔塊6與該等研磨顆粒4的總重為100wt%計,該清潔塊6為80wt%,該等研磨顆粒為20wt%。Referring to FIGS. 4 and 5 , an embodiment 7 of the probe cleaning device of the present invention is also suitable for cleaning the probe 2 (see FIG. 2 ), and includes a cleaning block 6 and several The abrasive particles 4. Based on the total weight of the cleaning block 6 and the abrasive particles 4 as 100 wt %, the cleaning block 6 is 80 wt %, and the abrasive particles are 20 wt %.

在本發明的其他實施態樣中,以該清潔塊6及該等研磨顆粒4的總重為100wt%計,該清潔塊6也能佔 χwt%, χ為20~80間的整數,以該清潔塊6與該等研磨顆粒4的總重為100wt%計,該等研磨顆粒4也能佔 ψwt%, ψ為20~80間的整數。 In other embodiments of the present invention, based on the total weight of the cleaning block 6 and the abrasive particles 4 being 100 wt %, the cleaning block 6 can also account for χ wt %, where χ is an integer between 20 and 80, with When the total weight of the cleaning block 6 and the abrasive particles 4 is 100 wt %, the abrasive particles 4 can also account for ψ wt %, where ψ is an integer between 20 and 80.

該清潔塊6包括一個呈正方體並位於中間的內塊體61,以及一個一體連接該內塊體61並包覆該內塊體61且外形呈正方體的外層體62。該內塊體61的邊長S1為1000µm。該外層體62的一個第三層厚T3為200µm。The cleaning block 6 includes an inner block 61 in the middle of a cube, and an outer body 62 integrally connected to the inner block 61 and covering the inner block 61 and having a cube shape. The side length S1 of the inner block 61 is 1000 µm. A third layer thickness T3 of the outer body 62 is 200 µm.

該等研磨顆粒4設置該內塊體61及該外層體62中。其中,以該清潔塊6與該等研磨顆粒4的總重為100wt%計,位於該清潔塊6中的研磨顆粒4為15wt%,位於該外層體62中的研磨顆粒4為5wt%。The abrasive particles 4 are arranged in the inner block body 61 and the outer layer body 62 . Wherein, based on the total weight of the cleaning block 6 and the abrasive particles 4 as 100 wt %, the abrasive particles 4 in the cleaning block 6 are 15 wt %, and the abrasive particles 4 in the outer body 62 are 5 wt %.

在本發明的其他實施態樣中,該邊長S1也能為 pµm, p為500~3000間的整數,該第三層厚T3也能為 qµm, q為100~250間的整數。以該清潔塊6與該等研磨顆粒4的總重為100wt%計,於該內塊體61中的研磨顆粒4的重量百分比也能為ε wt%,ε為5~75間的整數,位於該外層體62中的研磨顆粒4的重量百分比也能為ζ wt%,ζ為5~75間的整數。 In other embodiments of the present invention, the side length S1 can also be p µm, p is an integer between 500 and 3000, the third layer thickness T3 can also be q µm, and q is an integer between 100 and 250. Based on the total weight of the cleaning block 6 and the abrasive particles 4 being 100 wt %, the weight percentage of the abrasive particles 4 in the inner block 61 can also be ε wt %, where ε is an integer between 5 and 75, located in The weight percentage of the abrasive particles 4 in the outer layer body 62 can also be ζ wt %, where ζ is an integer between 5 and 75.

綜上所述,本發明探針清潔裝置的功效在於:可供該探針2反覆插入,而可透過該等研磨顆粒4研磨清除該探針2上所形成的氧化物或所附著的髒汙。To sum up, the effect of the probe cleaning device of the present invention is that the probe 2 can be inserted repeatedly, and the oxides formed on the probe 2 or the attached dirt can be removed by grinding through the abrasive particles 4 .

以上所述者,僅為本發明的實施例而已,不能以此限定本發明的申請專利範圍,且依本發明申請專利範圍及專利說明書簡單等效變化與修飾之態樣,亦應為本發明申請專利範圍所涵蓋。The above descriptions are merely examples of the present invention, which cannot limit the scope of the patent application of the present invention, and the simple equivalent changes and modifications according to the patent application scope of the present invention and the patent specification should also be regarded as the present invention. Covered by the scope of the patent application.

2:探針2: Probe

3:清潔層3: cleaning layer

31:第一層體31: first layer body

32:第二層體32: Second layer body

321:外表面321: outer surface

4:研磨顆粒4: Abrasive particles

51:黏著層51: Adhesive layer

52:離型層52: release layer

6:清潔塊6: Cleaning Blocks

61:內塊體61: Inner block

62:外層體62: Outer body

S1:邊長S1: side length

T0:整體厚度T0: Overall thickness

T1:第一層厚T1: Thickness of the first layer

T2:第二層厚T2: Second layer thickness

T3:第三層厚T3: The third layer is thick

本發明其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一個剖視圖,說明本發明探針清潔裝置的一個實施例1,圖中假想線是用以示意一第一層體與兩第二層體之區域而非實際分層之交界,且圖中的研磨顆粒僅為示意,並非實際分佈情形; 圖2是一個剖視圖,類似於圖1,說明該實施例1的使用方式; 圖3是一個剖視圖,說明本發明探針清潔裝置的一個實施例6; 圖4是一個立體圖,說明本發明探針清潔裝置的一個實施例7;及 圖5是一個剖視圖,說明該實施例7,圖中假想線是用以示意一內塊體與一外層體之區域而非實際分層之交界,且圖中的研磨顆粒僅為示意,並非實際分佈情形。 Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, wherein: 1 is a cross-sectional view illustrating an embodiment 1 of the probe cleaning device of the present invention. The imaginary line in the figure is used to illustrate the boundary between a first layer body and two second layer bodies rather than an actual layer, and the figure The abrasive particles in are for illustration only, not the actual distribution; Fig. 2 is a sectional view, similar to Fig. 1, illustrating the use of this embodiment 1; Figure 3 is a cross-sectional view illustrating an embodiment 6 of the probe cleaning device of the present invention; Figure 4 is a perspective view illustrating an embodiment 7 of the probe cleaning apparatus of the present invention; and FIG. 5 is a cross-sectional view illustrating Embodiment 7. The imaginary line in the figure is used to illustrate the boundary between an inner block and an outer layer rather than an actual layer, and the abrasive particles in the figure are for illustration only, not actual distribution situation.

3:清潔層 3: cleaning layer

31:第一層體 31: first layer body

32:第二層體 32: Second layer body

321:外表面 321: outer surface

4:研磨顆粒 4: Abrasive particles

51:黏著層 51: Adhesive layer

52:離型層 52: release layer

T0:整體厚度 T0: Overall thickness

T1:第一層厚 T1: Thickness of the first layer

T2:第二層厚 T2: Second layer thickness

Claims (9)

一種探針清潔裝置,適用於清潔一探針,並包含:一清潔層,包括一層位於中間的第一層體,以及兩層分別一體連接於該第一層體的兩相反側的第二層體;及數研磨顆粒,設置在該第一層體及該第二層體的其中至少一者且適用於清潔該探針;其中,以該清潔層及該等研磨顆粒的總重為100wt%計,該清潔層為20wt%~80wt%,該等研磨顆粒為20wt%~80wt%;其中,該清潔層由選自於矽膠材料、聚乙烯、聚丙烯、聚苯乙烯、苯乙烯-乙烯-丁烯-苯乙烯共聚物、乙烯丙烯橡膠、丁二烯橡膠、氯丁橡膠及丁腈橡膠所組成的物質群中選擇的其中至少一種所製成,並能供該探針刺入。 A probe cleaning device, suitable for cleaning a probe, and comprising: a cleaning layer, including a first layer body in the middle, and two second layers integrally connected to two opposite sides of the first layer body respectively. body; and a number of abrasive particles, arranged in at least one of the first layer body and the second layer body and suitable for cleaning the probe; wherein, the total weight of the cleaning layer and the abrasive particles is 100wt% In total, the cleaning layer is 20wt%~80wt%, and the abrasive particles are 20wt%~80wt%; wherein, the cleaning layer is selected from silicone materials, polyethylene, polypropylene, polystyrene, styrene-ethylene- It is made of at least one selected from the group consisting of butene-styrene copolymer, ethylene propylene rubber, butadiene rubber, neoprene rubber and nitrile rubber, and can be penetrated by the probe. 如請求項1所述的探針清潔裝置,其中,該等研磨顆粒設置在該第一層體及該第二層體中,且以該清潔層與該等研磨顆粒的總重為100wt%計,於該第一層體中的研磨顆粒的重量百分比為20~80wt%。 The probe cleaning device according to claim 1, wherein the abrasive particles are arranged in the first layer body and the second layer body, and the total weight of the cleaning layer and the abrasive particles is 100wt% , the weight percentage of the abrasive particles in the first layer body is 20-80 wt %. 如請求項1所述的探針清潔裝置,其中,該第一層體的一第一層厚為80~1400μm,每一第二層體的一第二層厚為10~100μm。 The probe cleaning device according to claim 1, wherein a first layer thickness of the first layer body is 80-1400 μm, and a second layer thickness of each second layer body is 10-100 μm. 如請求項1所述的探針清潔裝置,其中,該清潔層的A型蕭式硬度為0~90,該等研磨顆粒的材質為氧化鋁。 The probe cleaning device according to claim 1, wherein the A-type Shaw hardness of the cleaning layer is 0-90, and the abrasive particles are made of alumina. 如請求項1所述的探針清潔裝置,僅包含該清潔層,而不包含其他層狀結構。 The probe cleaning device as claimed in claim 1, comprising only the cleaning layer and no other layered structures. 如請求項1所述的探針清潔裝置,其中,該等研磨顆粒的粒徑為0.1~10μm。 The probe cleaning device according to claim 1, wherein the abrasive particles have a particle size of 0.1-10 μm. 一種探針清潔裝置,適用於清潔一探針,並包含:一清潔塊,包括一個位於中間的內塊體,以及一個包覆該內塊體並一體連接該內塊體的外層體;數研磨顆粒,設置在該內塊體及該外層體的其中至少一者且適用於清潔該探針;其中,以該清潔塊及該等研磨顆粒的總重為100wt%計,該清潔塊為20wt%~80wt%,該等研磨顆粒為20wt%~80wt%;其中,該清潔塊由選自於矽膠材料、聚乙烯、聚丙烯、聚苯乙烯、苯乙烯-乙烯-丁烯-苯乙烯共聚物、乙烯丙烯橡膠、丁二烯橡膠、氯丁橡膠及丁腈橡膠所組成的物質群中選擇的其中至少一種所製成,並能供該探針刺入。 A probe cleaning device is suitable for cleaning a probe, and comprises: a cleaning block, including an inner block body located in the middle, and an outer layer body covering the inner block body and integrally connecting the inner block body; Particles, disposed on at least one of the inner block and the outer body and suitable for cleaning the probe; wherein, based on the total weight of the cleaning block and the abrasive particles as 100 wt %, the cleaning block is 20 wt % ~80wt%, the abrasive particles are 20wt%~80wt%; wherein, the cleaning block is selected from silicone material, polyethylene, polypropylene, polystyrene, styrene-ethylene-butylene-styrene copolymer, It is made of at least one selected from the group consisting of ethylene propylene rubber, butadiene rubber, neoprene rubber and nitrile rubber, and can be penetrated by the probe. 如請求項7所述的探針清潔裝置,其中,該內塊體呈六面體狀,且該內塊體的邊長為500~3000μm,該外層體的一個第三層厚為100~250μm。 The probe cleaning device according to claim 7, wherein the inner block is hexahedral, the side length of the inner block is 500-3000 μm, and a third layer thickness of the outer body is 100-250 μm . 如請求項7所述的探針清潔裝置,其中,該等研磨顆粒設置在該內塊體及該外層體中,且以該清潔塊與該等研磨顆粒的總重為100wt%計,於該內塊體中的研磨顆粒的重量百分比為20~80wt%。The probe cleaning device as claimed in claim 7, wherein the abrasive particles are arranged in the inner block and the outer layer, and based on the total weight of the cleaning block and the abrasive particles as 100 wt%, the The weight percentage of the abrasive particles in the inner block is 20-80 wt %.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200404622A (en) * 2002-07-18 2004-04-01 James E Orsillo Probe device cleaner and method
US20050255796A1 (en) * 2004-05-14 2005-11-17 Sumitomo Electric Industries, Ltd. Probe cleaning sheet and cleaning method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200404622A (en) * 2002-07-18 2004-04-01 James E Orsillo Probe device cleaner and method
US20050255796A1 (en) * 2004-05-14 2005-11-17 Sumitomo Electric Industries, Ltd. Probe cleaning sheet and cleaning method

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